CN102519364B - Optical detection method and computer-aided system for plasma etching structure - Google Patents
Optical detection method and computer-aided system for plasma etching structure Download PDFInfo
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- CN102519364B CN102519364B CN201110391728.8A CN201110391728A CN102519364B CN 102519364 B CN102519364 B CN 102519364B CN 201110391728 A CN201110391728 A CN 201110391728A CN 102519364 B CN102519364 B CN 102519364B
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Abstract
The invention relates to an optical detection method and computer-aided system for a plasma etching structure. The optical detection method comprises the following steps of: (S1) processing incident light from a light source into parallel polarized light, transmitting the parallel polarized light through a polarization maintaining optical fiber of an electrode, which is arranged on an etching machine table, and realizing vertical incidence of the parallel polarized light onto the structure to be measured; (S2) leading out reflected light on the structure to be measured via the polarization maintaining optical fiber and collecting a spectrum of the reflected light; and (S3) sending the collected spectrum to the computer-aided system to process so as to get actual parameters which are related to the structure to be measured. According to the optical detection method and computer-aided system disclosed by the invention, more related data of the etching structure can be obtained.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of optical detection method and computer aided system for plasma etching structure.
Background technology
At present, for obtaining of the original position real time data of plasma etching, industry is widely used is a kind of IEP by name (Interferometry End Point), it is the technology that optical interference terminal is set, be called again optical interference techniques, its principle, for two bundles that utilize a light beam and form in the reflection of film upper and lower interface are with the coherent phenomena between source beam, is measured film thickness.From its principle, IEP is only confined to the original position of the thickness of light transmission film and is measured in real time, and cannot obtain the related data of more etching structures.
Summary of the invention
In order to address the above problem, the invention provides a kind of optical detection method for plasma etching structure, can be for the feature of complicated semiconductor structure (as the groove of periodic arrangement or via-hole array), original position is obtained the important parameters such as its critical size and etching depth in real time.
For achieving the above object, the invention provides a kind of optical detection method for plasma etching structure, comprise the steps: S1: the incident light from light source is processed into parallel polarized light, and transmit by being installed at the polarization maintaining optical fibre of etching machine bench top electrode, impinge perpendicularly in structure to be measured; S2: via described polarization maintaining optical fibre, described structural reflected light to be measured is drawn, and gather described catoptrical spectrum; S3: send to computer aided system to process gathered spectrum, to obtain the actual parameter relevant with described structure to be measured.
According to one embodiment of the invention, described by the incident light from light source, the treatment step S1 via light source polarization light path specifically comprises: the directional light from light source is treated as to parallel polarized light via polarization filter; Described parallel polarized light by the transmission of described polarization maintaining optical fibre after, the focusing by object lens impinges perpendicularly in described structure to be measured.
According to one embodiment of the invention, when gathering described catoptrical spectrum, also comprise: constantly rotate the TE mould polarization direction that described polarization maintaining optical fibre is adjusted incident light, make the feature Q factor of gathered catoptrical spectrum maximum, the resonance center frequeH that wherein the Q factor is described catoptrical spectrum and the ratio of resonant frequency bandwidth.According to one embodiment of the invention, when described structure to be measured is groove, by making the TE mould polarization direction of described incident light perpendicular to the bearing of trend of groove, obtain the maximized feature Q factor.According to another embodiment of the present invention, when described structure to be measured is via-hole array, by making the TE mould polarization direction of described incident light be parallel to the axis of symmetry direction of described via-hole array, obtain the maximized feature Q factor.
According to one embodiment of the invention, the step that described computer aided system is processed the reflected light of described collection comprises: receive described catoptrical spectrum; Based on a preset value application Finite Difference-Time Domain separating method, described catoptrical spectrum is analyzed to matching, obtain the intermediate result of the actual parameter relevant with described structure to be measured, wherein said preset value comprises design parameter and the specification of described structure to be measured; Based on described preset value, described intermediate result is screened, get rid of irrational value, to obtain the actual parameter relevant with described structure to be measured.
According to one embodiment of the invention, the relevant actual parameter of structure described and to be measured comprise in critical size, etching depth and the etching gradient any or several arbitrarily.
According to one embodiment of the invention, described etching machine bench is any in reactive ion etch machine, plasma etching machine, transformer coupled formula etching machine and capacitance coupling type etching machine.
The present invention also provides a kind of computer aided system, for structure to be measured is carried out to spectral analysis to obtain the actual parameter of described structure to be measured, described system comprises: initialization module, for reading for simplifying fit procedure and for the preset value of the selection result, wherein this preset value comprises design parameter and the specification of structure to be measured; Signal acquisition module, for receiving a catoptrical spectral signal; Analyze fitting module, for the preset value based at described initialization module, the received spectral signal of described signal acquisition module is analyzed to matching, to obtain the intermediate result of the actual parameter relevant with structure to be measured, what the method for described analysis matching adopted is Finite Difference-Time Domain separating method; Correction verification module, screens the intermediate result obtaining in described analysis fitting module for the preset value based at described initialization module, gets rid of irrational value, obtains the relevant actual parameter with described structure to be measured; Output module, for exporting described actual parameter.
The present invention is by the optical detection method of above-mentioned steps, and the IEP generally using compared with current industry, has the clear superiority obtaining for the original position real time data of labyrinth, and it can obtain the various supplemental characteristics of etching machine structure simultaneously; The various data of obtaining, can be widely used in the control of board flow process and real-time process control system, thereby obtain better etching effect.
Accompanying drawing explanation
Fig. 1 is according to the process flow diagram of the optical detection method for plasma etching structure of the embodiment of the present invention;
Fig. 2 A is according to the structural representation of the incident light of the embodiment of the present invention and reflected light light path;
Fig. 2 B is according to the schematic diagram that installs polarization maintaining optical fibre on etching machine bench additional of the embodiment of the present invention;
Fig. 3 is according to the structural representation of the reactive ion etch machine RIE of the embodiment of the present invention;
Fig. 4 is according to the structural representation of the inductive coupling type plasma etching machine ICP of the embodiment of the present invention;
Fig. 5 is according to the structural representation of the transformer coupled formula etching machine TCP of the embodiment of the present invention;
Fig. 6 is according to the structural representation of the capacitance coupling type etching machine CCP of the embodiment of the present invention;
Fig. 7 is according to the schematic diagram of the relation of the incident light polarization direction of the embodiment of the present invention and groove;
Fig. 8 is according to the schematic diagram of the relation of the incident light polarization direction of the embodiment of the present invention and via-hole array;
Fig. 9 is according to the structured flowchart of the computer aided system of the embodiment of the present invention.
Description of reference numerals in above-mentioned accompanying drawing is as follows:
21～optical fiber source; 22～polarization filter; 23～shading aperture; 24～relaying light path; 25～spectroscope; 26～object lens; 27～structure to be measured; 28～Bertrand object lens; 29～receiver; 31～top electrode; 32～bottom electrode; 41～quartz ampoule; 42～antenna; 43～coil; 44～wafer; 45～permanent magnet; 51～ceramic cap; 52～cavity; 53～transformer coil; 61～top electrode; 62～bottom electrode; 101～top electrode; 102～plasma; 103～polarization maintaining optical fibre; 105～structure to be measured; 104～bottom electrode; 106～light path.
Embodiment
With reference to the accompanying drawings the preferred embodiment of this technology is explained.
The present invention is by the optical detection scheme of application enhancements, for semiconductor, manufactures that labyrinth (as periodic arrangement groove or via-hole array structure) in dry etching process is introduced incident light by polarization maintaining optical fibre and by reflectance spectrum being carried out to the real-time collection of original position; Then by computer aided system, it is analyzed to matching, thereby obtain the significant datas such as its critical size and etching depth and the gradient, in order to instruct etching process, to obtain best etching result.
Therefore, according to one embodiment of present invention, as shown in Figure 1, the optical detection method for plasma etching structure of the present invention comprises the steps:
First step S1, is treated as parallel polarized light by the incident light from light source, and transmits by being installed at the polarization maintaining optical fibre of etching machine bench top electrode, impinges perpendicularly in structure to be measured.
Above-mentioned first step relates to two technical essentials, first, incident light from light source need be treated as to parallel polarized light via special light path, the schematic diagram of special light path is referring to Fig. 2 A, directional light from optical fiber source 21 becomes parallel polarized light through polarization filter 22, then by the parallel polarized light process shading aperture 23 after processing, relaying light path 24, and after the optic path such as spectroscope 25, via the polarization maintaining optical fibre 103 being installed on etching machine bench, be transferred to structure to be measured, due to polarization maintaining optical fibre generally thick (being several micron levels), and structure to be measured (as wafer), its size is generally 1 micron of left and right or in Nano grade, therefore, the incident light of polarization maintaining optical fibre transmission also needs objective lens 26 to focus on, so that incident light impinges perpendicularly in structure to be measured.
Secondly, polarization maintaining optical fibre described here can be installed at the optional position on the top electrode of etching machine bench, if can make from light path incident parallel polarized light be out vertically projected to wafer and with do not affect plasma generate and be transmitted as suitable, as shown in Figure 2 B.The linear polarization that installs the parallel polarized light that has guaranteed incident additional of polarization maintaining optical fibre is constant, improves relevant signal to noise ratio (S/N ratio), to realize the high-acruracy survey to physical quantity.For example, as shown in Fig. 3-Fig. 6, described etching machine bench can be reactive ion etch machine RIE, inductive coupling type plasma etching machine ICP, transformer coupled formula etching machine TCP, capacitance coupling type etching machine CCP etc.
Second step S2, draws described structural reflected light to be measured via described polarization maintaining optical fibre, and gathers described reflected light, obtains described catoptrical spectral signal.
Incide structural parallel polarized light to be measured and reflected by structure to be measured, structure example to be measured described here is as being the labyrinth pattern on crystal column surface, for example, and the groove structure of the periodic arrangement on crystal column surface or via-hole array etc.
The reflected light reflecting is generally pointolite, light path with reference to figure 2A, reflected light becomes directional light via object lens 26, then draws via described polarization maintaining optical fibre, after spectroscope transmits, by receiver 29, gather described reflected light, to obtain reflectance spectrum, in the light path of Fig. 2, be also provided with John Berendt object lens 28 here, therefore because reflected light is faint through light intensity after transmission, John Berendt object lens 28 are set enough strong for the reflected light that reflected light is focused on guarantee receiver 29 and receive.Described receiver 29 can be known spectrometer, spectrometer or spectrophotometer.Due to the difference of manufacturer, receiver has the model of various different volumes, different accuracy and different measuring ranges, therefore, described receiver can independent etching machine bench outside, also can be integrated on etching machine bench.
When gathering reflected light by receiver, observe the reflectance spectrum in receiver, adjust the polarization direction of incident light.Reflectance spectrum described here is for via the digital signal that for example above-mentioned spectrometer, spectrometer or spectrophotometer collection generate afterwards, and this digital signal can be presented on the display screen of spectrometer for example.The mode of adjusting incident light be for example constantly spin fiber with the polarization direction of adjustment incident parallel polarization light beam, make the TE mould of parallel polarized light of described incident and structure to be measured in quadrature.This quadrature is reflected in reflectance spectrum, for the narrowest state of the absorption peak of reflectance spectrum (the main wavelength place that resonance phenomena occurs of observing, be in reflectance spectrum, with fiber spinning, to have the absorption peak of significant change), under this state, the feature Q factor of the reflectance spectrum of structure to be measured is maximum, and the Q factor described here is optoelectronics key concept, is defined as the resonance center frequeH of spectrum and the ratio of resonant frequency bandwidth, Q value is larger, and the peak of resonance line or paddy are more narrow more sharp-pointed.Generally speaking, the Q factor is relevant with the structure of structure to be measured itself, for example, when groove structure that structure to be measured is periodic arrangement, need make the TE mould direction of incident polarized light and the direction of groove perpendicular, when structure to be measured is via-hole array, need make the TE mould direction of incident polarized light be parallel to the axis of symmetry of via-hole array.
Fig. 7 and Fig. 8 are the schematic diagram of the relation of incident light polarization direction and structure to be measured, as shown in Figure 7, polarization direction transverse axis P is TE mould, polarization direction Z-axis S is TM mould, when structure to be measured is groove, should make TE mould perpendicular to groove direction, be that P is perpendicular to the bearing of trend of groove, when structure to be measured is via-hole array, P is parallel to the axis of symmetry of via-hole array, it should be noted that here, because the array of through hole is different, can there is the axis of symmetry of different directions, according to topology requirement, select suitable axis of symmetry direction.This due to the difference of structure to be measured the different demands to the polarization direction of incident polarized light, can on the resonance line of spectrum as above, embody.In other words, when the polarization direction of incident polarized light and structure to be measured suitable, can make peak or the paddy of resonance line of spectrum narrower, the feature Q factor is maximum.
Third step S3, sends to computer aided system to process the reflectance spectrum signal of described acquisition, to obtain the actual parameter relevant with described structure to be measured.
In this third step, by computer aided system, reflectance spectrum signal is processed, obtain the actual parameter relevant with structure to be measured.As shown in Figure 9, the computer aided system here comprises initialization module, signal acquisition module, analysis fitting module, correction verification module and output module.
Initialization module 811, for reading for simplifying fit procedure and for the preset value of the selection result, wherein this preset value comprises design parameter and the specification of structure to be measured, such as etching depth and the gradient etc.According to one embodiment of present invention, this preset value can be pre-stored in computing machine, also can by input media, input in real time as required in use, for example, by keyboard, manually input required preset value.
Signal acquisition module 812, for receiving the catoptrical spectral signal from receiver.
Analyze fitting module 813, for the preset value based at initialization module, the received spectral signal of signal acquisition module is analyzed to matching, to obtain the intermediate result of the actual parameter relevant with structure to be measured, analyze here matching method employing be Finite Difference-Time Domain separating method (FDTD).Wherein, when analyzing matching, can carry out matching by the preset value based on being pre-stored in computing machine, if be difficult to convergence in fit procedure, can select manually to input other preset value, to obtain convergence solution, thereby obtain the actual parameter of correct structure to be measured.
Correction verification module 814, for the preset value based at initialization module, the intermediate result that obtains in analyzing fitting module is screened, get rid of irrational value, obtain the result of calculation of the actual parameter relevant with structure to be measured, such as the data such as characteristic dimension (as critical size), etching depth and the gradient that obtain measured structure.
Output module 815, for exporting described result of calculation.
The present invention is by the optical detection scheme of the labyrinth for dry etching of above-mentioned steps, the IEP that more current industry is generally used (Interferometry End Point, optical interference detection technology), there is the harmless clear superiority obtaining of carrying out for the original position real time data of labyrinth; The various data of obtaining, can be widely used in the control of board flow process and real-time process control system, thereby obtain better etching effect.
Although described the present invention with reference to several exemplary embodiments, should be appreciated that term used is explanation and exemplary and nonrestrictive term.The spirit or the essence that because the present invention can specifically implement in a variety of forms, do not depart from invention, so be to be understood that, above-described embodiment is not limited to any aforesaid details, and explain widely in the spirit and scope that should limit in the claim of enclosing, therefore fall into whole variations in claim or its equivalent scope and remodeling and all should be the claim of enclosing and contain.
Claims (9)
1. for an optical detection method for plasma etching structure, it is characterized in that, comprise the steps:
S1: the incident light from light source is processed into parallel polarized light, and transmits by being installed at the polarization maintaining optical fibre of etching machine bench top electrode, impinge perpendicularly in structure to be measured;
S2: via described polarization maintaining optical fibre, described structural reflected light to be measured is drawn, and gather described catoptrical spectrum;
S3: send to computer aided system to process gathered spectrum, to obtain the actual parameter relevant with described structure to be measured;
Wherein when gathering described catoptrical spectrum, also comprise: constantly rotate the TE mould polarization direction that described polarization maintaining optical fibre is adjusted incident light, make the feature Q factor of gathered catoptrical spectrum maximum, the resonance center frequeH that wherein the Q factor is described catoptrical spectrum and the ratio of resonant frequency bandwidth.
2. optical detection method according to claim 1, is characterized in that, described step S1 specifically comprises:
Directional light from light source is treated as to parallel polarized light via polarization filter;
Described parallel polarized light by the transmission of described polarization maintaining optical fibre after, the focusing by object lens impinges perpendicularly in described structure to be measured.
3. optical detection method according to claim 1, is characterized in that, when described structure to be measured is groove, by making the TE mould polarization direction of described incident light perpendicular to the bearing of trend of groove, obtains the maximized feature Q factor.
4. optical detection method according to claim 1, it is characterized in that, when described structure to be measured is via-hole array, by making the axis of symmetry direction that is parallel to described via-hole array of the TE mould polarization direction of described incident light, obtain the maximized feature Q factor.
5. according to the optical detection method described in claim 1-4 any one, it is characterized in that, the step that described computer aided system is processed the reflected light of described collection comprises:
Receive described catoptrical spectrum;
Based on a preset value application Finite Difference-Time Domain separating method, described catoptrical spectrum is analyzed to matching, obtain the intermediate result of the actual parameter relevant with described structure to be measured, wherein said preset value comprises design parameter and the specification of described structure to be measured;
Based on described preset value, described intermediate result is screened, get rid of irrational value, to obtain the actual parameter relevant with described structure to be measured.
6. according to the optical detection method described in claim 1-4 any one, it is characterized in that, the relevant actual parameter of structure described and to be measured comprise in critical size, etching depth and the etching gradient any or several arbitrarily.
7. according to the optical detection method described in claim 1-4 any one, it is characterized in that, described etching machine bench is any in reactive ion etch machine, plasma etching machine, transformer coupled formula etching machine and capacitance coupling type etching machine.
8. one kind for according to the computer aided system of the optical detection method of the plasma etching structure described in claim 1-7 any one, for structure to be measured is carried out to spectral analysis to obtain the actual parameter of described structure to be measured, it is characterized in that, described system comprises:
Initialization module, for reading for simplifying fit procedure and for the preset value of the selection result, wherein this preset value comprises design parameter and the specification of structure to be measured;
Signal acquisition module, for receiving a catoptrical spectral signal;
Analyze fitting module, for the preset value based at described initialization module, the received spectral signal of described signal acquisition module is analyzed to matching, to obtain the intermediate result of the actual parameter relevant with structure to be measured, what the method for described analysis matching adopted is Finite Difference-Time Domain separating method;
Correction verification module, screens the intermediate result obtaining in described analysis fitting module for the preset value based at described initialization module, gets rid of irrational value, obtains the relevant actual parameter with described structure to be measured;
Output module, for exporting described actual parameter.
9. computer aided system according to claim 8, is characterized in that, the relevant actual parameter of structure described and to be measured comprise in critical size, etching depth and the etching gradient any or several arbitrarily.
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| CN107993946B (en) * | 2016-10-27 | 2020-11-20 | 中微半导体设备(上海)股份有限公司 | Broadband spectrum optical measuring device and plasma processing device |
| CN110060915A (en) * | 2019-04-15 | 2019-07-26 | 福建晶安光电有限公司 | Inductively coupled plasma body etching machines and method, etching control method and system |
| CN110567686B (en) * | 2019-10-11 | 2024-03-29 | 淮阴师范学院 | Mirror quality detection device and detection method for large-caliber optical reflection telescope |
| CN111609810B (en) * | 2020-05-19 | 2021-08-13 | 中国科学院光电技术研究所 | Method for determining etching depth of high-energy ion beam on glass substrate |
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| CN1203382A (en) * | 1998-07-01 | 1998-12-30 | 吉林大学 | All wavelength surface plasma excimer resonance photochemical sensor |
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| JPH1064886A (en) * | 1996-08-20 | 1998-03-06 | Sony Corp | Device and method for dry etching |
| US6703250B2 (en) * | 2002-02-14 | 2004-03-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of controlling plasma etch process |
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| CN1219236A (en) * | 1996-03-19 | 1999-06-09 | 利奥泰克有限公司 | Method and device for determining characteristic parameters by polarised light |
| CN1203382A (en) * | 1998-07-01 | 1998-12-30 | 吉林大学 | All wavelength surface plasma excimer resonance photochemical sensor |
| CN1675518A (en) * | 2002-08-13 | 2005-09-28 | 朗姆研究公司 | Process endpoint detection method using broadband reflectometry |
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