CN102519364A - Optical detection method and computer-aided system for plasma etching structure - Google Patents
Optical detection method and computer-aided system for plasma etching structure Download PDFInfo
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- CN102519364A CN102519364A CN2011103917288A CN201110391728A CN102519364A CN 102519364 A CN102519364 A CN 102519364A CN 2011103917288 A CN2011103917288 A CN 2011103917288A CN 201110391728 A CN201110391728 A CN 201110391728A CN 102519364 A CN102519364 A CN 102519364A
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Abstract
The invention relates to an optical detection method and computer-aided system for a plasma etching structure. The optical detection method comprises the following steps of: (S1) processing incident light from a light source into parallel polarized light, transmitting the parallel polarized light through a polarization maintaining optical fiber of an electrode, which is arranged on an etching machine table, and realizing vertical incidence of the parallel polarized light onto the structure to be measured; (S2) leading out reflected light on the structure to be measured via the polarization maintaining optical fiber and collecting a spectrum of the reflected light; and (S3) sending the collected spectrum to the computer-aided system to process so as to get actual parameters which are related to the structure to be measured. According to the optical detection method and computer-aided system disclosed by the invention, more related data of the etching structure can be obtained.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of optical detection method and computer aided system that is used for the plasma etching structure.
Background technology
At present; For obtaining of the original position real time data of plasma etching; Industry is widely used to be a kind of IEP by name (Interferometry End Point), i.e. the technology of optical interference terminal point setting is called optical interference techniques again; Its principle for two bundles that utilize a light beam and form in the reflection of film upper and lower interface with the coherent phenomena between the source beam, measure film thickness.Can know that by its principle IEP only is confined to the original position of the thickness of light transmission film and measures in real time, and can't obtain the related data of more etching structures.
Summary of the invention
In order to address the above problem; The present invention provides a kind of optical detection method that is used for the plasma etching structure; Can be to the characteristics of complicated semiconductor structure (like the groove or the via-hole array of periodic arrangement), original position is obtained important parameters such as its critical size and etching depth in real time.
For realizing above-mentioned purpose; The present invention provides a kind of optical detection method that is used for the plasma etching structure; Comprise the steps: S1: will be processed into parallel polarized light from the incident light of light source; And, impinge perpendicularly on the structure to be measured through being installed at the polarization maintaining optical fibre transmission of etching machine bench top electrode; S2: via said polarization maintaining optical fibre said structural reflected light to be measured is drawn, and gather said catoptrical spectrum; S3: the spectrum of being gathered is sent to computer aided system handle, to obtain and the relevant actual parameter of said structure to be measured.
According to one embodiment of the invention, said will specifically comprising: will be treated as parallel polarized light via the polarization filter from the directional light of light source from the incident light of light source treatment step S1 via light source polarization light path; Said parallel polarized light through the transmission of said polarization maintaining optical fibre after, the focusing through object lens impinges perpendicularly on the said structure to be measured.
According to one embodiment of the invention; When gathering said catoptrical spectrum; Also comprise: constantly rotate the TE mould polarization direction that said polarization maintaining optical fibre is adjusted incident light; Make that the catoptrical spectrum characteristics Q factor of being gathered is maximum, wherein the Q factor is the ratio of resonance centre frequency with the resonant frequency bandwidth of said catoptrical spectrum.According to one embodiment of the invention, when said structure to be measured was groove, the TE mould polarization direction through making said incident light obtained the maximized characteristic Q factor perpendicular to the bearing of trend of groove.According to another embodiment of the present invention, when said structure to be measured is via-hole array, be parallel to the axis of symmetry direction of said via-hole array, obtain the maximized characteristic Q factor through the TE mould polarization direction that makes said incident light.
According to one embodiment of the invention, said computer aided system carries out processed steps to the reflected light of said collection and comprises: receive said catoptrical spectrum; Use the Finite Difference-Time Domain separating method based on a preset value said catoptrical spectrum is analyzed match, obtain the intermediate result of the actual parameter relevant with said structure to be measured, wherein said preset value comprises said structure Design parameter to be measured and specification; Based on said preset value said intermediate result is screened, get rid of irrational value, to obtain and the relevant actual parameter of said structure to be measured.
According to one embodiment of the invention, the relevant actual parameter of structure said and to be measured comprises any or any several kinds in critical size, etching depth and the etching gradient.
According to one embodiment of the invention, said etching machine bench is any in reactive ion etch machine, plasma etching machine, transformer coupled formula etching machine and the capacitance coupling type etching machine.
The present invention also provides a kind of computer aided system; Be used to treat measurement structure and carry out spectral analysis to obtain the actual parameter of said structure to be measured; Said system comprises: initialization module; Be used to read and be used to the preset value simplifying fit procedure and be used for The selection result, wherein this preset value comprises structure Design parameter to be measured and specification; Signal acquisition module is used to receive a catoptrical spectral signal; Analyze fitting module; The preset value that is used for being based on said initialization module is analyzed match to the received spectral signal of said signal acquisition module; To obtain the intermediate result of the actual parameter relevant with structure to be measured, what said analysis fit method adopted is the Finite Difference-Time Domain separating method; The verification module, the preset value that is used for being based on said initialization module screens the intermediate result that in said analysis fitting module, is obtained, and gets rid of irrational value, obtains the relevant actual parameter with said structure to be measured; Output module is used to export said actual parameter.
The present invention is through the optical detection method of above-mentioned steps, and the IEP that present industry is generally used has the clear superiority that obtains for the original position real time data of labyrinth, and it can obtain the various supplemental characteristics of etching machine structure simultaneously; The various data of being obtained can be widely used in control of board flow process and the real-time processing procedure control system, thereby obtain better etching effect.
Description of drawings
Fig. 1 is the process flow diagram according to the optical detection method that is used for the plasma etching structure of the embodiment of the invention;
Fig. 2 A is the structural representation according to the incident light of the embodiment of the invention and reflected light light path;
Fig. 2 B is the synoptic diagram that on etching machine bench, installs polarization maintaining optical fibre additional according to the embodiment of the invention;
Fig. 3 is the structural representation according to the reactive ion etch machine RIE of the embodiment of the invention;
Fig. 4 is the structural representation according to the inductive coupling type plasma etching machine ICP of the embodiment of the invention;
Fig. 5 is the structural representation according to the transformer coupled formula etching machine TCP of the embodiment of the invention;
Fig. 6 is the structural representation according to the capacitance coupling type etching machine CCP of the embodiment of the invention;
Fig. 7 is the synoptic diagram according to the relation of the incident light polarization direction of the embodiment of the invention and groove;
Fig. 8 is the synoptic diagram according to the relation of the incident light polarization direction of the embodiment of the invention and via-hole array;
Fig. 9 is the structured flowchart according to the computer aided system of the embodiment of the invention.
Description of reference numerals in the above-mentioned accompanying drawing is following:
21～optical fiber source; 22～polarization filter; 23～shading aperture; 24～relaying light path; 25～spectroscope; 26～object lens; 27～structure to be measured; 28～Bertrand object lens; 29～receiver; 31～top electrode; 32～bottom electrode; 41～quartz ampoule; 42～antenna; 43～coil; 44～wafer; 45～permanent magnet; 51～ceramic cap; 52～cavity; 53～transformer coil; 61～top electrode; 62～bottom electrode; 101～top electrode; 102～plasma; 103～polarization maintaining optical fibre; 105～structure to be measured; 104～bottom electrode; 106～light path.
Embodiment
To explain the preferred embodiment of present technique with reference to accompanying drawing.
The optical detection scheme of the present invention through application enhancements makes that labyrinth (like periodic arrangement groove or via-hole array structure) in the dry etching process is introduced incident light through polarization maintaining optical fibre and through reflectance spectrum being carried out the real-time collection of original position for semiconductor; Then it is analyzed match, thereby obtain its critical size and significant datas such as the etching depth and the gradient, in order to instruct etching process, to obtain best etching result through computer aided system.
Therefore, as shown in Figure 1 according to one embodiment of present invention, the optical detection method that is used for the plasma etching structure of the present invention comprises the steps:
First step S1 will be treated as parallel polarized light from the incident light of light source, and transmit through the polarization maintaining optical fibre that is installed at the etching machine bench top electrode, impinge perpendicularly on the structure to be measured.
Above-mentioned first step relates to two technical essentials, at first, needs and will be treated as parallel polarized light via special light path from the incident light of light source; The synoptic diagram of special light path is referring to Fig. 2 A; Directional light from optical fiber source 21 becomes parallel polarized light through polarization filter 22, and the parallel polarized light after will handling then is transferred to structure to be measured through after the optic path such as shading aperture 23, relaying light path 24 and spectroscope 25 via the polarization maintaining optical fibre 103 that is installed on the etching machine bench; Because polarization maintaining optical fibre is thick (being several micron levels) generally; And structure to be measured (like wafer), therefore its size is generally about 1 micron or in Nano grade; The incident light of polarization maintaining optical fibre transmission also needs objective lens 26 to focus on, so that incident light impinges perpendicularly on the structure to be measured.
Secondly, polarization maintaining optical fibre described here can be installed at the optional position on the top electrode of etching machine bench, if the incident parallel polarized light that comes out from light path is vertically projected on the wafer and with do not influence plasma generate and be transmitted as suitable, shown in Fig. 2 B.The linear polarization that installs the parallel polarized light that has guaranteed incident additional of polarization maintaining optical fibre is constant, improves relevant signal to noise ratio (S/N ratio), to realize the high-acruracy survey to physical quantity.For example, like Fig. 3-shown in Figure 6, said etching machine bench can be reactive ion etch machine RIE, inductive coupling type plasma etching machine ICP, transformer coupled formula etching machine TCP, capacitance coupling type etching machine CCP etc.
The second step S2 draws said structural reflected light to be measured via said polarization maintaining optical fibre, and gathers said reflected light, obtains said catoptrical spectral signal.
Incide structural parallel polarized light to be measured and reflected by structure to be measured, structure example to be measured described here is as being the labyrinth pattern on the crystal column surface, for example, and the groove structure of the periodic arrangement on the crystal column surface or via-hole array etc.
The reflected light that reflects is generally pointolite, and with reference to the light path of figure 2A, reflected light becomes directional light via object lens 26; Draw via said polarization maintaining optical fibre again, after spectroscope transmits, gather described reflected light through receiver 29; To obtain reflectance spectrum, in the light path of Fig. 2, also be provided with John Berendt object lens 28 here; Owing to light intensity after the transmission of reflected light process is faint, therefore John Berendt object lens 28 are set are used for reflected light focusing enough strong with the reflected light that assurance receiver 29 receives.Said receiver 29 can be known spectrometer, spectrometer or spectrophotometer.Because the difference of manufacturer, receiver has the model of various different volumes, different accuracy and different measuring ranges, therefore, said receiver can independent etching machine bench outside, also can be integrated on the etching machine bench.
When gathering reflected light through receiver, observe the reflectance spectrum in the receiver, adjust the polarization of incident light direction.Reflectance spectrum described here is for via the digital signal that generates after for example above-mentioned spectrometer, spectrometer or the spectrophotometer collection, and this digital signal can be presented on the display screen of spectrometer for example.The mode of adjustment incident light be for example constantly spin fiber make the TE mould and the structure to be measured of parallel polarized light of said incident be in quadrature to adjust the polarization direction of incident parallel polarization light beam.This quadrature is reflected on the reflectance spectrum, is the narrowest state of the absorption peak of reflectance spectrum (the main wavelength that resonance phenomena takes place of observing is promptly rotated the absorption peak that significant change is arranged with optical fiber on the reflectance spectrum); Under this state; The characteristic Q factor of the reflectance spectrum of structure to be measured is maximum, and the Q factor described here is an optoelectronics key concept, is defined as the ratio of resonance centre frequency with the resonant frequency bandwidth of spectrum; The Q value is big more, and then the peak of resonance line or paddy are narrow more sharp-pointed more.Generally speaking; The Q factor is relevant with the structure of structure to be measured itself; For example, when structure to be measured is the groove structure of periodic arrangement, need make that the direction of TE mould direction and groove of incident polarized light is perpendicular; When structure to be measured is via-hole array, need make the TE mould direction of incident polarized light be parallel to the axis of symmetry of via-hole array.
Fig. 7 and Fig. 8 are the synoptic diagram of the relation of incident light polarization direction and structure to be measured, and be as shown in Figure 7, and polarization direction transverse axis P is the TE mould; Polarization direction Z-axis S is the TM mould, when structure to be measured is groove, should make the TE mould perpendicular to the groove direction; Be the bearing of trend of P perpendicular to groove, when structure to be measured was via-hole array, P was parallel to the axis of symmetry of via-hole array; Here need to prove,, can have the axis of symmetry of different directions because the array of through hole is different; According to topology requirement, select suitable axis of symmetry direction.The difference of this because structure to be measured and, can on the resonance line of aforesaid spectrum, embodying to the different demands of the polarization direction of incident polarized light.In other words, when the polarization direction of incident polarized light and structure to be measured suitable, can make the peak or the paddy of resonance line of spectrum narrow more, promptly the characteristic Q factor is maximum.
Third step S3 sends to computer aided system with the reflectance spectrum signal of said acquisition and handles, to obtain and the relevant actual parameter of said structure to be measured.
In this third step, come the reflectance spectrum signal is handled through computer aided system, obtain the actual parameter relevant with structure to be measured.As shown in Figure 9, the computer aided system here comprises initialization module, signal acquisition module, analysis fitting module, verification module and output module.
The present invention is through the optical detection scheme of the labyrinth that is used for dry etching of above-mentioned steps; IEP (the Interferometry End Point that present industry is generally used; Optical interference detection is technological), have the harmless clear superiority that obtains of carrying out for the original position real time data of labyrinth; The various data of being obtained can be widely used in control of board flow process and the real-time processing procedure control system, thereby obtain better etching effect.
Though described the present invention with reference to several exemplary embodiments, should be appreciated that used term is explanation and exemplary and nonrestrictive term.Because the present invention's practical implementation and do not break away from the spirit or the essence of invention in a variety of forms; So be to be understood that; The foregoing description is not limited to any aforesaid details; And should in enclose spirit that claim limited and scope, explain widely, therefore fall into whole variations and remodeling in claim or its equivalent scope and all should be the claim of enclosing and contain.
Claims (10)
1. an optical detection method that is used for the plasma etching structure is characterized in that, comprises the steps:
S1: will be processed into parallel polarized light from the incident light of light source, and, impinge perpendicularly on the structure to be measured through being installed at the polarization maintaining optical fibre transmission of etching machine bench top electrode;
S2: via said polarization maintaining optical fibre said structural reflected light to be measured is drawn, and gather said catoptrical spectrum;
S3: the spectrum of being gathered is sent to computer aided system handle, to obtain and the relevant actual parameter of said structure to be measured.
2. optical detection method according to claim 1 is characterized in that, said step S1 specifically comprises:
To be treated as parallel polarized light via the polarization filter from the directional light of light source;
Said parallel polarized light through the transmission of said polarization maintaining optical fibre after, the focusing through object lens impinges perpendicularly on the said structure to be measured.
3. optical detection method according to claim 1; It is characterized in that; When gathering said catoptrical spectrum; Also comprise: constantly rotate the TE mould polarization direction that said polarization maintaining optical fibre is adjusted incident light, make that the catoptrical spectrum characteristics Q factor of being gathered is maximum, wherein the Q factor is the ratio of resonance centre frequency with the resonant frequency bandwidth of said catoptrical spectrum.
4. optical detection method according to claim 3 is characterized in that, when said structure to be measured was groove, the TE mould polarization direction through making said incident light obtained the maximized characteristic Q factor perpendicular to the bearing of trend of groove.
5. optical detection method according to claim 3; It is characterized in that; When said structure to be measured was via-hole array, the axis of symmetry direction that is parallel to said via-hole array of the TE mould polarization direction through making said incident light obtained the maximized characteristic Q factor.
6. according to each described optical detection method of claim 1-5, it is characterized in that said computer aided system carries out processed steps to the reflected light of said collection and comprises:
Receive said catoptrical spectrum;
Use the Finite Difference-Time Domain separating method based on a preset value said catoptrical spectrum is analyzed match, obtain the intermediate result of the actual parameter relevant with said structure to be measured, wherein said preset value comprises said structure Design parameter to be measured and specification;
Based on said preset value said intermediate result is screened, get rid of irrational value, to obtain and the relevant actual parameter of said structure to be measured.
7. according to each described optical detection method of claim 1-6, it is characterized in that the relevant actual parameter of structure said and to be measured comprises any or any several kinds in critical size, etching depth and the etching gradient.
8. according to each described optical detection method of claim 1-6, it is characterized in that said etching machine bench is any in reactive ion etch machine, plasma etching machine, transformer coupled formula etching machine and the capacitance coupling type etching machine.
9. a computer aided system is used to treat measurement structure and carries out spectral analysis to obtain the actual parameter of said structure to be measured, it is characterized in that said system comprises:
Initialization module is used to read and is used to the preset value simplifying fit procedure and be used for The selection result, and wherein this preset value comprises structure Design parameter to be measured and specification;
Signal acquisition module is used to receive a catoptrical spectral signal.
Analyze fitting module; The preset value that is used for being based on said initialization module is analyzed match to the received spectral signal of said signal acquisition module; To obtain the intermediate result of the actual parameter relevant with structure to be measured, what said analysis fit method adopted is the Finite Difference-Time Domain separating method;
The verification module, the preset value that is used for being based on said initialization module screens the intermediate result that in said analysis fitting module, is obtained, and gets rid of irrational value, obtains the relevant actual parameter with said structure to be measured;
Output module is used to export said actual parameter.
10. computer aided system according to claim 9 is characterized in that, the relevant actual parameter of structure said and to be measured comprises any or any several kinds in critical size, etching depth and the etching gradient.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107993946A (en) * | 2016-10-27 | 2018-05-04 | 中微半导体设备(上海)有限公司 | Broadband spectral optical measuring device and plasma processing apparatus |
| CN110060915A (en) * | 2019-04-15 | 2019-07-26 | 福建晶安光电有限公司 | Inductively coupled plasma body etching machines and method, etching control method and system |
| CN110567686A (en) * | 2019-10-11 | 2019-12-13 | 淮阴师范学院 | mirror surface quality detection device and detection method for large-aperture optical reflection telescope |
| CN111609810A (en) * | 2020-05-19 | 2020-09-01 | 中国科学院光电技术研究所 | Method for determining etching depth of high-energy ion beam on glass substrate |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1064886A (en) * | 1996-08-20 | 1998-03-06 | Sony Corp | Device and method for dry etching |
| CN1203382A (en) * | 1998-07-01 | 1998-12-30 | 吉林大学 | All wavelength surface plasma excimer resonance photochemical sensor |
| CN1219236A (en) * | 1996-03-19 | 1999-06-09 | 利奥泰克有限公司 | Method and device for determining characteristic parameters by polarised light |
| US20030153102A1 (en) * | 2002-02-14 | 2003-08-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of controlling plasma etch process |
| CN1675518A (en) * | 2002-08-13 | 2005-09-28 | 朗姆研究公司 | Process endpoint detection method using broadband reflectometry |
| CN101377413A (en) * | 2008-09-28 | 2009-03-04 | 苏州大学 | Method for measuring photoresist mask slot-shaped structure parameter |
-
2011
- 2011-11-30 CN CN201110391728.8A patent/CN102519364B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1219236A (en) * | 1996-03-19 | 1999-06-09 | 利奥泰克有限公司 | Method and device for determining characteristic parameters by polarised light |
| JPH1064886A (en) * | 1996-08-20 | 1998-03-06 | Sony Corp | Device and method for dry etching |
| CN1203382A (en) * | 1998-07-01 | 1998-12-30 | 吉林大学 | All wavelength surface plasma excimer resonance photochemical sensor |
| US20030153102A1 (en) * | 2002-02-14 | 2003-08-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of controlling plasma etch process |
| CN1675518A (en) * | 2002-08-13 | 2005-09-28 | 朗姆研究公司 | Process endpoint detection method using broadband reflectometry |
| CN101377413A (en) * | 2008-09-28 | 2009-03-04 | 苏州大学 | Method for measuring photoresist mask slot-shaped structure parameter |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107993946A (en) * | 2016-10-27 | 2018-05-04 | 中微半导体设备(上海)有限公司 | Broadband spectral optical measuring device and plasma processing apparatus |
| CN107993946B (en) * | 2016-10-27 | 2020-11-20 | 中微半导体设备(上海)股份有限公司 | Broadband spectrum optical measuring device and plasma processing device |
| CN110060915A (en) * | 2019-04-15 | 2019-07-26 | 福建晶安光电有限公司 | Inductively coupled plasma body etching machines and method, etching control method and system |
| CN110567686A (en) * | 2019-10-11 | 2019-12-13 | 淮阴师范学院 | mirror surface quality detection device and detection method for large-aperture optical reflection telescope |
| CN110567686B (en) * | 2019-10-11 | 2024-03-29 | 淮阴师范学院 | Mirror quality detection device and detection method for large-caliber optical reflection telescope |
| CN111609810A (en) * | 2020-05-19 | 2020-09-01 | 中国科学院光电技术研究所 | Method for determining etching depth of high-energy ion beam on glass substrate |
| CN111609810B (en) * | 2020-05-19 | 2021-08-13 | 中国科学院光电技术研究所 | Method for determining etching depth of high-energy ion beam on glass substrate |
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