CN102517171A - Cleaning liquid for solar cell silicon chip and using method thereof - Google Patents
Cleaning liquid for solar cell silicon chip and using method thereof Download PDFInfo
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- CN102517171A CN102517171A CN2011103264192A CN201110326419A CN102517171A CN 102517171 A CN102517171 A CN 102517171A CN 2011103264192 A CN2011103264192 A CN 2011103264192A CN 201110326419 A CN201110326419 A CN 201110326419A CN 102517171 A CN102517171 A CN 102517171A
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Abstract
The invention belongs to the technical field of cleaning of a silicon chip in a semiconductor manufacturing process and particularly provides cleaning liquid for a solar cell silicon chip and a using method thereof. The cleaning liquid for the solar cell silicon chip is formed by mixing nitric acid, hydrofluoric acid, hydrogen peroxide and deionized water, wherein the concentration of the nitric acid in the cleaning liquid in percentage by weight is 25%-32.5%, the concentration of the hydrofluoric acid in percentage by weight is 0.1%-1%, the concentration of the hydrogen peroxide in percentage by weight is 15%-25%, and the balance is the deionized water. The using method of the cleaning liquid for the silicon chip comprises the following steps of firstly soaking and cleaning the silicon chip with the deionized water and further soaking and cleaning the silicon chip with the cleaning liquid. The cleaning liquid disclosed by the invention can not only effectively remove organic and inorganic pollution on the surface of the silicon chip, but also eliminate metal and non-metal particles attached on the surface of the silicon chip and further improve the high-quality rate and the efficiency of the solar cell chip. The cleaning liquid disclosed by the invention has the advantages of simple formula and good cleaning effect; and furthermore, the cleaning method is simple, the cleaning time is short, and the temperature required for cleaning is not high.
Description
Technical field
The present invention relates to the silicon chip cleaning technique field in a kind of semiconductor fabrication process, the method that especially relates to the preparation of this kind silicon chip cleaning liquid and use this scavenging solution cleaning silicon chip.
Background technology
Along with the exhaustion day by day of conventional energy resources, sun power easy to clean more and more receives people's attention.In solar cell fabrication process, silicon chip is as the core component of solar cell, and its various performance parameters directly influences the generating efficiency of solar cell.The preparation process of solar cell is generally: preceding Dow Chemical pre-treatment, diffusion preparation PN junction, the processing of trimming knot, dephosphorization silex glass, plating silicon nitride film, silk screen printing and sintering processes, wherein preceding Dow Chemical pretreatment technology comprises silicon chip cleaning and leather producing process.The quality that silicon chip cleans to later stage making herbs into wool influence greatly.Good matte can improve solar cell to absorption of incident light efficient, improves the generating efficiency of solar cell, and vice versa.Therefore, the quality of silicon chip cleaning has great influence to solar cell properties.
In general, the silicon chip that is used to prepare solar cell is to be formed by the silicon rod cutting.Usually use line cutting technology in the industry at present, it is the silicon chip about 200 microns that the metal cutting line of high-speed motion cuts into thickness with silicon rod down assisting of auxiliary liquid, tackiness agent.Generally; Can there be all contaminations in silicon chip surface; These pollutents generally derive from metallic particles, the silicon grain of line of cut and silicon chip wearing and tearing generation, the auxiliary that uses in the cutting process, adhesive residue, and all contaminations deposition in the handling process etc.In the process that stores, transports at silicon chip, because pollutent remains in the overlong time of silicon chip surface, pollutent generation oxidation, the oxidize contaminants brute force is adsorbed on silicon chip surface, can't clean up through present cleaning way.The existence of these pollutents will influence the complete processing in later stage; Residual compound, metal pollutant and the soda acid of silicon chip surface is residual when making making herbs into wool too much makes silicon chip surface hickie occur, produces the aberration phenomenon; Reduce the efficiency of conversion of solar cell, influence yield rate and quality product.Therefore, the silicon chip cleaning is most important in solar cell preparation technology.
The purging method of solar cell has following report at present:
Like number of patent application is 200910157191 reports: the invention provides a kind of solar cell silicon slice detergent and method of use thereof; Belong to the manufacture of solar cells technical field, formulated by the component of following volume ratio: DZ1: DZ2: water=5～15: 1～10: 100; Wherein DZ1 is made up of the component of following mol ratio: sodium alkyl benzene sulfonate: metasilicate pentahydrate sodium: TKPP: Z 150PH: polyoxyethylene glycol: water=5: 7: 3: 7: 6: 72; DZ2 is made up of the component of following mol ratio: volatile caustic: ydrogen peroxide 50: water=5: 15: 80.Method of use of the present invention is following: the monocrystalline silicon piece after will cutting is placed on and carries out ultrasonic cleaning in the clean-out system, and its scavenging period is 5 minutes-20 minutes, and cleaning temperature is 40 ℃-70 ℃.DZ1 in scavenging period of the present invention, cleaning temperature and the clean-out system, the concentration of DZ2 are coordinated mutually, to reach surperficial grease and the silicon chip interior metal impurity that effective removal is produced by line cutting silicon single crystal.
Above-mentioned cleaning agent formula is complicated, and scavenging period is long, and cleaning temperature is high, has certain weak point.
Summary of the invention
To the deficiency of prior art, the present invention aims to provide and a kind ofly can effectively remove organic and inorganic pollutent and the silicon chip cleaning liquid of adsorption particle and the method for using this scavenging solution cleaning silicon chip that remains on the silicon chip surface.This scavenging solution prescription is simple, and cleaning performance is good, and purging method is simple, and scavenging period is short, and the temperature that cleaning needs is not high.
For realizing above-mentioned purpose, the technical scheme that the present invention adopted is:
A kind of silicon chip of solar cell scavenging solution; Form by nitric acid, hydrofluoric acid, hydrogen peroxide and deionized water mixed preparing; Make that the mass percentage concentration of nitric acid is 25%～32.5% in the scavenging solution; The mass percentage concentration of hydrofluoric acid is 0.1%～1%, and the mass percentage concentration of hydrogen peroxide is 15%～25%, and surplus is a deionized water.
The mass percentage concentration of said nitric acid is preferably 30%, and said hydrofluoric acid quality percentage is dense to be preferably 0.5%, and the mass percentage concentration of hydrogen peroxide is preferably 20%, and surplus is said deionized water.
The method of use of silicon chip of solar cell scavenging solution of the present invention comprises the steps:
(1) with deionized water soaking and washing silicon chip, soak time was controlled at 3 minutes-5 minutes;
(2) adopt above-mentioned silicon chip of solar cell scavenging solution soaking and washing silicon chip, soaking temperature is 20 ℃～30 ℃, and soak time is 3 minutes～5 minutes.
Do further explanation and explanation in the face of the present invention down:
It is residual that residual organic pollutant mainly contains glue, synthetic wax, grease, fiber machine cutting fluid on the silicon chip.In the process that stores, transports at silicon chip, because pollutent remains in the overlong time of silicon chip surface, pollutent generation oxidation, the oxidize contaminants brute force is adsorbed on silicon chip surface, can't clean up through present cleaning way.Nitric acid in the above-mentioned scavenging solution has strongly-acid and strong oxidizing property; Oxidize contaminants, the pollutent that remains in silicon chip surface had good removal effect, can effectively remove all contaminations of silicon chip surface, the hydrogen peroxide in the scavenging solution can effectively suppress in the scavenging solution nitric acid to the corrosion of silicon chip; Hydrogen peroxide and silicon chip react simultaneously; Generate hydrophilic sull, this sull is cleaned the hydrofluoric acid corrosion in the liquid subsequently again, and oxidation takes place again after the corrosion at once; Oxidation is carried out with corrosion repeatedly; Particle attached to silicon chip surface also falls into scavenging solution with corrosion layer, and owing to the solvency action of hydrofluoric acid to silicon-dioxide, the silicon chip surface noresidue zone of oxidation after the cleaning.Above-mentioned scavenging solution can disposable effective removal silicon chip surface various pollutions and adsorption particle, and simple to operate, adapt to the needs of scale operation.
The amount of nitric acid can not be very little in the scavenging solution, and words very little can not effectively wash the pollution of silicon chip surface, and the mass percentage concentration of nitric acid is 25%～32.5% comparatively suitable in the scavenging solution.Nitric acid also can corrosion of silicon, so must add hydrogen peroxide in the scavenging solution, the peroxo-Hydrogen Energy effectively suppresses the corrosion of nitric acid to silicon chip, guarantees that the nitric acid in the solution does not damage silicon chip when silicon chip surface pollutes removing.The content of the hydrogen peroxide in the scavenging solution can not be very little, and the words hydrogen peroxide very little and the speed of response of silicon chip are too slow, can't effectively remove the particle of silicon chip surface absorption.The mass percentage concentration of hydrogen peroxide is 15%～25% more suitable in the scavenging solution.
Compared with prior art, the invention has the advantages that:
1, the method that the invention provides a kind of silicon chip cleaning liquid and use this scavenging solution cleaning silicon chip; Can effectively remove the various pollutions and the adsorption particle of silicon chip surface; For the leather producing process of silicon chip has been created good condition, thereby the factor of merit and the efficient of solar battery sheet have been improved.
2, scavenging solution prescription of the present invention is simple, and cleaning performance is good, and purging method is simple, and scavenging period is short, and the temperature that cleaning needs is not high.
Embodiment
Below in conjunction with concrete embodiment to the present invention to further explanation and explanation
Embodiment 1:
A kind of solar cell silicon slice detergent of the present invention; Form through mixed preparing by nitric acid, hydrofluoric acid, hydrogen peroxide and deionized water; Wherein the mass percentage concentration of nitric acid is 30%; The hydrofluoric acid mass percentage concentration is 0.5%, and the mass percentage concentration of hydrogen peroxide is 20%, and surplus is said deionized water.
Embodiment 2:
A kind of solar cell silicon slice detergent of the present invention; Form through mixed preparing by nitric acid, hydrofluoric acid, hydrogen peroxide and deionized water; Wherein the mass percentage concentration of nitric acid is 25%; The hydrofluoric acid mass percentage concentration is 1%, and the mass percentage concentration of hydrogen peroxide is 15%, and surplus is said deionized water.
Embodiment 3:
A kind of solar cell silicon slice detergent of the present invention; Form through mixed preparing by nitric acid, hydrofluoric acid, hydrogen peroxide and deionized water; Wherein the mass percentage concentration of nitric acid is 32.5%; The hydrofluoric acid mass percentage concentration is 0.1%, and the mass percentage concentration of hydrogen peroxide is 25%, and surplus is said deionized water.
Embodiment 4:
A kind of method of using the described clean-out system cleaning solar energy cell of embodiment 1-3 silicon chip may further comprise the steps:
1. at first in a rinse bath, feed a certain amount of deionized water, the height of deionized water in rinse bath need surpass the height of silicon chip, guarantees that whole silicon wafer is soaked in the deionized water, and soak time was controlled at 3-5 minute, and silicon chip is carried out preliminary cleaning.
2. in another rinse bath, feed above-mentioned silicon chip cleaning liquid then, silicon chip is put into silicon chip cleaning liquid clean.Nitric acid in the silicon chip cleaning liquid has strongly-acid and strong oxidizing property, can effectively remove the organic and inorganic pollution of silicon chip surface.Hydrogen peroxide in the scavenging solution can effectively suppress in the scavenging solution nitric acid to the corrosion of silicon chip, and hydrogen peroxide and silicon chip react simultaneously, generate hydrophilic sull; This sull is cleaned the hydrofluoric acid corrosion in the liquid subsequently again; Oxidation takes place again after the corrosion at once, and oxidation is carried out with corrosion repeatedly, also falls into scavenging solution with corrosion layer attached to the particle of silicon chip surface; And since the solvency action to silicon-dioxide of hydrofluoric acid, the silicon chip surface non-oxidation layer after the cleaning.
In this specific embodiment, the Controllable Temperature of silicon chip cleaning liquid is built in 20～30 ℃ during cleaning silicon chip, and the time of cleaning silicon chip can be controlled in 3～5 minutes scopes.
Statistic data is following:
| Scavenging solution | The making herbs into wool fraction defective | Battery sheet efficient |
| Instance 1 | 0.4％ | 17.97％ |
| Instance 2 | 0.3％ | 17.96％ |
| Instance 3 | 0.4％ | 17.97％ |
| Do not use | 1.6％ | 17.93％ |
After using scavenging solution of the present invention, the making herbs into wool fraction defective reduces significantly, and the average efficiency of conversion of solar cell also increases.In a word, silicon chip of solar cell scavenging solution of the present invention, prescription is simple; Scavenging period is short, and cleaning performance is good, can effectively remove the organic and inorganic contamination of silicon chip surface; Improve making herbs into wool quality and good article rate, and finally improve the efficiency of conversion of solar cell, and cleaning process of the present invention is simple; Scavenging period is short, and cleaning temperature is low, helps scale operation.
Claims (3)
1. silicon chip of solar cell scavenging solution; It is characterized in that; Formed by nitric acid, hydrofluoric acid, hydrogen peroxide and deionized water mixed preparing, make that the mass percentage concentration of nitric acid is 25%～32.5% in the scavenging solution, the mass percentage concentration of hydrofluoric acid is 0.1%～1%; The mass percentage concentration of hydrogen peroxide is 15%～25%, and surplus is a deionized water.
2. a kind of silicon chip of solar cell scavenging solution according to claim 1; It is characterized in that the mass percentage concentration of said nitric acid is 30%, said hydrofluoric acid mass percentage concentration is 0.5%; The mass percentage concentration of hydrogen peroxide is 20%, and surplus is said deionized water.
3. the method for use of claim 1 or 2 said silicon chip of solar cell scavenging solutions comprises the steps:
(1) with deionized water soaking and washing silicon chip, soak time was controlled at 3 minutes-5 minutes;
(2) adopt claim 1 or 2 described silicon chip of solar cell scavenging solution soaking and washing silicon chips; Soaking temperature is 20 ℃～30 ℃, and soak time is 3 minutes～5 minutes.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011103264192A CN102517171A (en) | 2011-10-25 | 2011-10-25 | Cleaning liquid for solar cell silicon chip and using method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011103264192A CN102517171A (en) | 2011-10-25 | 2011-10-25 | Cleaning liquid for solar cell silicon chip and using method thereof |
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| CN102517171A true CN102517171A (en) | 2012-06-27 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103666784A (en) * | 2013-11-29 | 2014-03-26 | 孙爱玲 | Pre-cleaning agent for silicon wafer |
| CN106824499A (en) * | 2017-02-07 | 2017-06-13 | 扬州荣德新能源科技有限公司 | The method of resin filler strip in removal silicon material |
| CN116005121A (en) * | 2022-12-27 | 2023-04-25 | 天津美泰真空技术有限公司 | Method for preparing ITO film by magnetron sputtering of substrate |
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| CN101937946A (en) * | 2010-09-16 | 2011-01-05 | 浙江大学 | Surface texture method of solar battery silicon slice |
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| CN1079009A (en) * | 1993-04-01 | 1993-12-01 | 大连得胜无缝钢管厂 | Acid washing liquid for stainless steel and using method |
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| CN103666784A (en) * | 2013-11-29 | 2014-03-26 | 孙爱玲 | Pre-cleaning agent for silicon wafer |
| CN106824499A (en) * | 2017-02-07 | 2017-06-13 | 扬州荣德新能源科技有限公司 | The method of resin filler strip in removal silicon material |
| CN116005121A (en) * | 2022-12-27 | 2023-04-25 | 天津美泰真空技术有限公司 | Method for preparing ITO film by magnetron sputtering of substrate |
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Application publication date: 20120627 |