CN102510276B - Big-power module high-frequency driver with non-neural advance mechanism - Google Patents
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Abstract
The invention provides a big-power module high-frequency driver with a non-neural advance mechanism, which is formed by connecting a signal interface module 1, a signal interface module 2, a mode selection module, a fault output module, a logic processing module, a direct circuit (DC)/DC power supply module 1, a DC/DC power supply module2, a signal reconfiguration module 1, a signal reconfiguration module 2, a detection protecting module 1, a detection protecting module 2, a power amplification module 1, a power amplification module 2 and a magnetic isolation module, wherein the logic processing module has functions of pulse-width modulation (PWM) signal interlocking protection, high-frequency narrow-pulse modulation and fault time-delay automatic resetting; the DC/DC power supply module 1 and the DC/DC power supply module 2 both have the capability of inputting one way+15V voltage and outputting isolated double-way +/-18V voltage; the signal reconfiguration module 1 and the signal reconfiguration module 2 both have the functions of regulating and shaping a high-frequency narrow-pulse module signal and carrying out interlocking protection; and the detection protecting module 1 andthe detection protecting module 2 are both provided with the non-neural advance mechanism. The high-frequency driver has the advantages of good protection effect, low application cost, good technological adaptability, strong driving power, good isolation performance, high voltage isolation tolerance and the like.
Description
Technical field
The present invention relates to a kind of high power module high frequency driver, particularly a kind of high power module high frequency driver that possesses the leading mechanism of non-nerve.
Background technology
High-power/the superpower inverter (high-power communication power supply, electrochemical power source, large-scale charge power supply device, electric automobile energy conversion equipment etc.) need jumbo power model or the application in parallel of a plurality of power model, to power grade and the higher requirement (maximum drive power can reach 20W) of performance proposition of driver.At present, both at home and abroad the high-power driving device of main flow mainly comprises with EXB841 and is the light isolated form device of representative and is the magnetic isolated form device of representative with 2SD315A and pulse transformer etc.The driving power of light isolated form device is generally less, and time of delay is longer, and isolation voltage is lower; The cost of pulse transformer is lower, but when high-power driving was used, volume was big, and drive waveforms is yielding, is prone to the drive waveforms oscillatory occurences when soft switch application; The driving force of 2SD315A is good, the reliability height, and defencive function is perfect, but application cost is higher.
Along with reverse frequency (novel High Speed I GBT module operating frequency can reach 100kHz) improves constantly, to the also corresponding raising of requirement of drive operation frequency; For simplifying power supply manufacturing and maintenance, driver preferably adopts modularized design; Large power inverter power source needs jumbo IGBT module or a plurality of IGBT module is in parallel uses, and requires driver that shorter propagation delay time, reliable and perfect defencive function and high-isolating and good antijamming capability are arranged; In addition, also to simplify application to driving the requirement of power supply, reduce whole application cost.Therefore, researching and developing novel high-frequency driver and the realization that a driving force is strong, reliability is high and cost is low domesticizes significant.
At present, the isolation of driving signal has light to isolate and magnetic isolation dual mode.The isolation voltage of light isolation method is relatively low, has the problem of aspects such as transmission delay, aging and reliability.And adopt pulse transformer isolation method (magnetic isolation) can realize higher relatively isolation voltage, and reliability is higher, and transmission delay is little, can transmit the pulse signal of upper frequency, does not have aging problem.Therefore, most pulse transformers that adopt are finished the isolation transmission that drives signal as isolated component in the high pressure IGBT driver.But traditional driving requires the control impuls duty ratio less than 50% with pulse transformer usually; Simultaneously, the saturation problem of magnetic core of pulse transformer has also limited the ON time of control impuls; In addition, also have the drive waveforms problem of dtmf distortion DTMF, especially when driving high-power IGBT parallel transistor group, because the input capacitance of IGBT is bigger, the drive pulse waveform of the secondary output of pulse transformer is difficult to satisfy the driving requirement.
In the high-power application scenario, according to different busbar voltages, necessarily require to have very high isolation voltage tolerance between the driver primary and secondary.The factor that another one must be considered is the dv/dt tolerance, when the IGBT speed-sensitive switch, may produce very high dv/dt, and this signal can be coupled to elementary control circuit through isolating transformer or pulse transformer, control circuit is produced disturb.In addition, drive the also more complicated of powering, device is more, and is not ideal enough aspect isolation and wiring effect.
At present, generally judge by the value that detects IGBT collection emitter voltage Vce whether IGBT is in short circuit or over-current state, and realize short circuit or overcurrent protection according to corresponding value.Since IGBT at the collector voltage Vce at the initial stage of opening than higher; if this moment, protective circuit work may cause misoperation; influence protection effect; therefore rational and effective Vce value decision circuitry must be arranged, determine that the Vce rising of IGBT is because be in the initial stage of opening or be in short circuit or over-current state.
In addition, for reducing and suppressing the peak voltage that high power module produces when the high speed turn-off, driver needs the accurately residing various abnormalities of identification power model, and can in time take corresponding protection action according to the abnormality type.Traditional protected mode; usually detect unusual condition by testing circuit; feed back to controller then; by controller failure judgement type; take corresponding protection action then; because it is longer to detect the time of feedback information and processing, the protection action can often lag behind, and is not prompt enough rapidly to the protection response of IGBT power model.The musculoskeletal system of human body can be adjusted rapidly according to its distortion situation during external force in opposing, and just can finish before the fastest neural reflex, Here it is non-neural control feedback mechanism---machinery feeds back in advance.If the leading mechanism of this non-nerve can be introduced in the high frequency driver of high power module, can realize in time and effectively protection of power model is then had important reference and is worth.
But according to the retrieval, also do not have at present merge above-mentionedly comprise high frequency Anti-Jamming Technique, high-speed isolated technology, based on the low cost high power module high-frequency drive technology of the protection in advance mechanism of non-neural feedback and the effective recognition methods of abnormality etc. and the relevant report of product.
Summary of the invention
The objective of the invention is to propose a kind of high power module high frequency driver that possesses the leading mechanism of non-nerve at the problem of high power module high frequency driver existence both at home and abroad at present and relevant technology trends.The design of this driver applications high speed circuit, high frequency is anti-interference and technology such as high-speed isolated; adopt reliability design approach; based on non-neural protection in advance Mechanism Study developing low-cost, high performance high-power high-frequency driver module, and the performance that possesses reliable driving 400A/1700V IGBT power tube and drive 3 300A/1700VIGBT power tube group in parallel.
In order to achieve the above object, the present invention is achieved by following technical proposals: a kind of high power module high frequency driver that possesses the leading mechanism of non-nerve, it is characterized in that: by the Signal interface module one and the Signal interface module two that are used for compatible with digital amount and analog quantity pwm signal, mode selection module, the fault output module, logic processing module with the modulation of pwm signal interlock protection and high-frequency narrow-pulse and fault time-delay auto-reset function, the DC/DC supply module one and the DC/DC supply module two that possess input single channel+15V and output isolated form two-way ± 18V voltage capability, the signal reconstruction module one and the signal reconstruction module two that possess the shaping of high-frequency narrow-pulse signal condition and interlock protection, possess the detection protection module one of the leading mechanism of non-nerve and detect protection module two, power amplifier module one, power amplifier module two and magnetic isolation module connect and compose as follows: described Signal interface module one is connected the input of digital quantity or analog quantity pwm signal with the input of Signal interface module two, output connects logic processing module respectively; Described logic processing module also links to each other with mode selection module, fault output module and magnetic isolation module respectively; Described magnetic isolation module also links to each other with signal reconstruction module two with detection protection module one, detection protection module two, signal reconstruction module one respectively; An output of described detection protection module one also links to each other with power amplifier module one, and an output that detects protection module two also links to each other with power amplifier module two; An output of described signal reconstruction module one also links to each other with power amplifier module one, and an output of signal reconstruction module two also links to each other with power amplifier module two; Described power amplifier module one and the external power model of power amplifier module two outputs;
DC/DC supply module one and DC/DC supply module two external power supplys.DC/DC supply module one and DC/DC supply module two are all module for power supply of driver.
It is consistent with the internal structure that detects protection module two to detect protection module one, constitutes by the IGBT overcurrent/short-circuit detecting circuit that possesses non-neural protection in advance mechanism, driver module undervoltage detection circuit, logic chip U4 and overheating detection circuit; The signal of described IGBT overcurrent/short-circuit detecting circuit, driver module undervoltage detection circuit and overheating detection circuit is all as the input signal of logic chip U4, and the output of described logic chip U4 is connected with the input of power amplifier module one with power amplifier module two.
Described IGBT overcurrent/short-circuit detecting circuit is interconnected to constitute by operational amplifier U1, the resistance R 1-R3 and Rce, capacitor C ce, power supply Vdc1-Vdc2, switch S and the diode D3 that are used for IGBT short circuit/overcurrent identification and the control of blind area time; Described driver module undervoltage detection circuit is by being interconnected to constitute for producing internal reference voltage voluntarily and carrying out under-voltage relatively voltage stabilizing didoe ZD1-ZD2, diode D1-D2, resistance R 8-R14, capacitor C 2, triode Q1-Q2 and the operational amplifier U2 of identification; Described overheating detection circuit is interconnected to constitute by the voltage comparator circuit that resistance R 4-R6 and R15, capacitor C 1, thermistor R7 and integrated transporting discharging chip U3 form.
Described DC/DC supply module one is consistent with the internal structure of DC/DC supply module two, by be used for to realize 1 tunnel+15V power supply produce two groups of isolated forms ± pulsewidth generation circuit and the DC/DC high frequency switching inverter device of 18V two-way output voltage connect and compose; Described pulsewidth generation circuit is by the pulse width modulating chip U8, the capacitor C 16-C18 that recommend pwm signal for generation of the two-way high frequency and C21, resistance R 25-R27 and drive resistance R 21-R24 and connect and compose; Described DC/DC high frequency switching inverter device is by adopting two-wire and around structure with finish the power transmission and export the voltage of two groups ± 18V, be used for transmitting forward and oppositely high isolated form pulse transformer, high frequency power field effect transistor, electric capacity, voltage stabilizing didoe and the rectifier diode of burst pulse control signal connect and compose.
Described logic processing module is connected and composed by signal interlock protection circuit, burst pulse modulation circuit and fault time-delay automatic reset circuit; Described signal interlock protection circuit is connected and composed by resistance R 400-R406, diode D401-D406, triode Q402 and 4 NAND gate Schmidt trigger U401A-U401D of possessing high frequency weak current electrostatic defending, signal interlocking and waveform shaping function; Described burst pulse modulation circuit connects and composes by being used for that square wave rising edge and trailing edge are modulated into the MOSFET driving amplifier U3 of positive and negative burst pulse and constant portion no-output, two groups of differential circuit C406-C409, resistance R 415-R416 and resistance capacitor device; Monostable flipflop U402, triode Q401-Q405, resistance R 407-R414 and capacitor C 401-C405 that described fault time-delay automatic reset electro route possesses the automatic locking signal output of fault and fault time-delay auto-reset function connect and compose.
Described signal reconstruction module one is consistent with signal reconstruction module two internal structures, connects and composes by high-frequency narrow-pulse signal conditioning circuit and pulse shaper; The bandpass filtering π type structure RC passive filter that described high-frequency narrow-pulse signal conditioning circuit is made up of the voltage stabilizing didoe ZD601 that possesses high frequency weak current safeguard function, diode D601 and D602, capacitor C 602 and C603 and resistance R 604 is interconnected to constitute; Described pulse shaper is connected and composed by the Schmidt trigger U601-U603 that possesses waveform shaping and signal logic disposal ability, mosfet driver U604-U605, two N and P channel-type switch mosfet U606 and the peripheral circuit be made up of resistance, electric capacity and voltage-stabiliser tube.
Described power amplifier module one is consistent with power amplifier module two internal structures, produces the forward drive waveform and resistance R 801-R802, the triode Q801-Q804 and the diode D801-D802 that oppositely turn-off waveform and export negative voltage when the no control signal input connect and compose by being used for according to control signal.
Described Signal interface module one is consistent with the internal structure of Signal interface module two.
Principle of the present invention is such: this driver can work in single channel and drive and the half-bridge driven pattern, determines by the high-low level signal of mode selection module.Signal interface module one and Signal interface module two correspond respectively to the two-way pwm signal of input, can compatible with digital amount pwm signal, and also direct input analog amount pwm signal.Two DC/DC supply modules of driver only need two-way+15V direct current supply can satisfy all power reguirements of driver, have simplified manufacturing and the maintenance of power supply.Logic processing module one is to realize the signal interlock function, enables by mode selection module, produces straight-through phenomenon in the time of can preventing half-bridge driven; The 2nd, finish the modulation of drive pulse signal, pulse signals is modulated, and its rising edge and trailing edge are converted to two anti-phase narrow pulse signals; The 3rd, export corresponding information to the fault output module according to the fault-signal that the magnetic isolation module passes over; The 4th, realize fault time-delay auto-reset function.The magnetic isolation module is mainly finished high-speed transfer and reliable isolation of narrow pulse signal.The high-frequency narrow-pulse signals that signal reconstruction module one and signal reconstruction module two mainly passes over the magnetic isolation module carry out conversion and reconstruct to obtain satisfactory drive waveforms, because pulse transformer only transmits the pulse signal of narrower in width, therefore, the duty ratio of driving signal can have very wide excursion; Because the transformer transmission is narrow pulse signal, its magnetic core and winding be unusual compact all, and corresponding leakage inductance and distributed capacitance are very little, and the design of pulse transformer and the transmission of signal are also more favourable.Detecting protection module one and detection protection module two pairs of IGBT on off states, driving voltage value and temperature etc. detects; in case occur unusual; be delivered to the fault output module through magnetic isolation module and logic processing module on the one hand; directly control power amplifier module one and power amplifier module two according to fault type on the other hand; make the soft shutoff of drive waveforms or direct the blockade export; realize non-neural protection in advance, improve the protection effect.
Compared with prior art, the present invention has following advantage and beneficial effect:
1, better protection effect.Since adopted non-neural protection in advance mechanism, more direct, quicker and more accurate to the protection of power device;
2, lower application cost.Owing to adopted magnetic isolated form pulse signal modulation method, pulse transformer only need transmit the very narrow high-frequency pulse signal of pulsewidth, and pulse transformer is very small and exquisite; Simultaneously, high DC/DC supply module of isolating only needs two-way+15V power supply just can satisfy all power demands of this driver, has greatly simplified peripheral power supply design and manufacturing process.
3, Technological adaptability is better.Because only need being coupled, pulse transformer transmits very narrow pulse signal, problem such as the high duty ratio magnetic core that does not exist traditional pulse transformer to face is saturated, and driving frequency and duty ratio all can change in wide range; Driver can the compatible with digital signal and the input of analog signal; In addition, can also select drive operation in half-bridge or single channel drive pattern by mode selection module; Driver adopts modular organization, and compact conformation only needs external two-way+15V power supply just can work.Therefore, has better Technological adaptability.
4, driving power is stronger.Because driving power depends on the ability of power amplifier module and DC/DC supply module, and the two all can strengthen by the parameter that improves its high frequency power field effect transistor, driving power can be up to 20W.
5, isolation performance is better, and voltage isolation tolerance is higher.
Description of drawings
Fig. 1 is the general structure block diagram that the present invention possesses the high power module high frequency driver of the leading mechanism of non-nerve;
Fig. 2 is the detection protection module one of the present invention's high power module high frequency driver of possessing the leading mechanism of non-nerve or the fundamental diagram that detects protection module two;
Fig. 3 is the DC/DC supply module one of the present invention's high power module high frequency driver of possessing the leading mechanism of non-nerve or the fundamental diagram of DC/DC supply module two;
Fig. 4 is that the present invention possesses the non-nerve fundamental diagram of the logic processing module of the high power module high frequency driver of mechanism in advance;
Fig. 5 is the signal reconstruction module one of the present invention's high power module high frequency driver of possessing the leading mechanism of non-nerve or the fundamental diagram of signal reconstruction module two;
Fig. 6 is the power amplifier module one of the present invention's high power module high frequency driver of possessing the leading mechanism of non-nerve or the fundamental diagram of power amplifier module two.
Embodiment
The present invention is described in further detail below in conjunction with embodiment and accompanying drawing, but embodiments of the present invention are not limited thereto.
Embodiment
As shown in Figure 1, the present invention possess the leading mechanism of non-nerve the high power module high frequency driver mainly by Signal interface module 1 and Signal interface module 2 102, mode selection module 200, fault output module 300, logic processing module 400, DC/DC supply module 1 and DC/DC supply module 2 502, signal reconstruction module 1 and signal reconstruction module 2 602, detect protection module 1 and detect protection module 2 702, power amplifier module 1 and power amplifier module 2 802 and magnetic isolation module 900 constitutes.Wherein, the internal structure of Signal interface module 1 and Signal interface module 2 102, DC/DC supply module 1 and DC/DC supply module 2 502, signal reconstruction module 1 and signal reconstruction module 2 602, detection protection module 1 and detection protection module 2 702, power amplifier module 1 and power amplifier module 2 802 is just the same.Signal interface module 1 is connected the input of digital quantity or analog quantity pwm signal with an end of Signal interface module 2 102, an end connects logic processing module 400; Logic processing module 400 links to each other with Signal interface module 1, Signal interface module 2 102, mode selection module 200, fault output module 300 and magnetic isolation module 900 respectively; DC/DC supply module 1 and DC/DC supply module 2 502 provide power supply for all modules of driver; Magnetic isolation module 900 links to each other with signal reconstruction module 2 602 with logic processing module 400, detection protection module 1 and detection protection module 2 702 and signal reconstruction module 1 respectively; Detecting protection module 1 links to each other with power amplifier module 1 with magnetic isolation module 900 respectively; Detecting protection module 2 702 links to each other with power amplifier module 2 802 with magnetic isolation module 900 respectively; Signal reconstruction module 1 links to each other with power amplifier module 1 with magnetic isolation module 900 respectively; Signal reconstruction module 2 602 links to each other with power amplifier module 2 802 with magnetic isolation module 900 respectively; The output of power amplifier module 1 and power amplifier module 2 802 is connected power model respectively, realizes the driving work of power model.
As shown in Figure 2; detection protection module one or detection protection module two that the present invention possesses the high power module high frequency driver of the leading mechanism of non-nerve mainly are made of three parts; it is IGBT overcurrent/short-circuit detecting circuit; driver module undervoltage detection circuit and overheating detection circuit constitute; three detection signals input logic chip U4 are respectively judged; the level change takes place in three signals of input U4 any one can make that all the output level of U4 overturns; this signal is directly controlled the output of power amplifier module; make the driving signal of power amplifier module progressively reduce, realize the soft shutoff of IGBT.
Overheated detection protective circuit mainly is made of resistance R 4-R6 and R15, capacitor C 1 and thermistor R7 and integrated transporting discharging chip U3.When temperature changed, the resistance value of R7 can be along with change, and the dividing potential drop on it is corresponding changing also, and when its voltage surpassed voltage on the R4, the homophase of comparator U4 and reverse input end signal magnitude changed, and made the upset of U4 output level.
Operational amplifier U1, resistance R 1-R3 and Rce, capacitor C ce, power supply Vdc1-Vdc2, switch S and diode D3 have constituted IGBT overcurrent/short-circuit detecting circuit, and wherein Rg is for driving resistance.The present invention has taken full advantage of the operating characteristic of IGBT; when short circuit or overcurrent appear in IGBT; its service area will be withdrawed from the saturation region and c, the e voltage across poles Vce of IGBT are raise; make the corresponding rising of anode potential of series diode D3; when surpassing the threshold voltage of setting; the U1 upset makes the output level upset of U4, makes the protective circuit action.Because in the starting stage that IGBT opens; the Vce value is higher, if protective circuit action this moment can cause mistake to turn-off, the present invention solves this problem by a simple blind area time circuit very cleverly for this reason; mainly by switch S, resistance R ce, capacitor C ce constitutes for it.When IGBT turn-offs; S is open-minded; capacitor C ce is charged to 15V by Vdc1; when IGBT opened, S turn-offed, and Cce electric capacity discharges through Rce; the voltage at its two ends is descended gradually by+15V; make that opening the reference voltage at initial stage at IGBT is higher than detection voltage, guarantee that U1 can not produce upset at the IGBT initial stage of opening, and prevents the protective circuit misoperation.
Voltage stabilizing didoe ZD1-ZD2, diode D1-D2, resistance R 8-R14, capacitor C 2, triode Q1-Q2 and operational amplifier U2 have constituted undervoltage detection circuit.Wherein, voltage stabilizing didoe ZD1 is equivalent to the internal drive source of stable pressure, provides a voltage reference value to undervoltage detection circuit.When the supply power voltage V+ that causes exporting because of some reason when the DC/DC of driver supply module one and DC/DC power supply mould two is higher than voltage reference value, D1 meeting conducting, Q1 drives open-minded because of forward voltage, cause the base voltage of Q2 to be pulled down to ground and turn-off, because Q2 turn-offs, make the D2 forward conduction, be higher than the A port for the B port incoming level signal of U2.If V+ is lower than reference voltage value, based on above-mentioned same principle, the B port incoming level signal of Q2 can be dragged down, A port level less than U2, thereby make the outputs level signals of U2 overturn, cause the upset of U4 output level, the driving voltage of control power amplifier module slowly reduces, and realizes soft shutoff.The present invention adopts so non-neural protection in advance mechanism to shorten the time of protection action; namely no matter be overcurrent, short circuit, under-voltage or be overheated; in case detecting fault takes place; the fault detect protection module is directly controlled power amplifier module; make it slowly to reduce driving voltage (soft shutoff), thereby protect the safety of IGBT to greatest extent.
As shown in Figure 3, DC/DC supply module one and DC/DC supply module two that the present invention possesses the high power module high frequency driver of the leading mechanism of non-nerve mainly are made of pulsewidth generation circuit, DC/DC high frequency switching inverter device, by 1 tunnel+15V power supply produce two groups isolate fully ± the 18V dual-output power supply.Wherein, pulsewidth generation circuit is by pulse width modulating chip U8, capacitor C 16-C18 and C21, resistance R 25-R27 and drive resistance R 21-R24 and constitute, and mainly produces the two-way high frequency and recommends pwm signal, in order to drive two groups of DC/DC inverters of control; Pulse width modulating chip U8 is SG3525; High frequency power field effect transistor U5A, U5B, C16, T1-2, D8A-D15A, ZD6A-ZD7A, C15A, C18A constitute first group of DC/DC inverter, generation ± 18V two-way output voltage; High frequency power field effect transistor U6A, U6B, C20, T2-2, D8B-D15B, ZD6B-ZD7B, C15B, C18B constitute second group of DC/DC inverter, produce other one group ± 18V two-way output voltage; Transformer T1-2 of the present invention and T2-2 all adopt two-wire and around structure; not only want transmitted power; export two groups ± 18V voltage; also to transmit through the narrow pulse signal after the modulation of signal modulation module; be transformer T1-2 of the present invention and T2-2 respectively with the magnetic isolation module in transformer T1-1 and T2-1 share magnetic core; in addition, the T1-1 of magnetic isolation module and T2-1 also want back transfer to give logic processing module by the fault-signal that detects protection module output.By this innovation structure, reduced cost of manufacture significantly, the structure of driver is more compact, and volume is more small and exquisite.
As shown in Figure 4, the present invention's logic processing module of possessing the high power module high frequency driver of the leading mechanism of non-nerve mainly is made of signal interlock protection circuit, burst pulse modulation circuit and fault time-delay automatic reset circuit.Wherein, INA and INB are two-way input pwm signal, and FAULT is the output fault-signal.
The signal interlock protection circuit mainly is made of resistance R 400-R406, diode D401-D406, triode Q402 and NAND gate Schmidt trigger U401.Wherein, D401,402 is BAV99, constitute 1 group of high frequency weak current electrostatic discharge protection circuit, D403 and D404 are BAV99 also, constitute other one group of high frequency weak current electrostatic discharge protection circuit, prevent the destruction of high-frequency noise or interference source, and U401 is 4 NAND gate Schmidt triggers, and there are 4 Schmidt triggers inside, is respectively U401A, U401B, U401C and U401D.The INA input signal is imported U401D simultaneously through entering 1 pin of U401A after the high frequency weak current electrostatic discharge protection circuit, through and non-after import 9 pin of U401C, interlock with another road pwm signal INB of 8 pin of input U401C; Same, the input signal of INB also through introducing 2 pin of U401A after U401B and the non-processing, is realized interlocking with the INB signal, can prevent from occurring when the half-bridge mode of operation straight-through phenomenon in this way; INA and INB through carrying out waveform shaping behind U401A and the U401C, obtain the square wave of rule respectively; Simultaneously, 2 pin of U401A and 9 pin of U401C are connected to Q402 by diode D405 and D406 respectively, when fault takes place, and the Q402 conducting, the level that is equivalent to 9 pin of 2 pin of U401A and U401C is dragged down, and makes the output of U401A and U401C be high level.
The burst pulse modulation circuit mainly is made of U3, capacitor C 406-C409 and resistance R 415-R416, wherein, U3 is the MOSFET driving amplifier, mainly play the amplification of signal, R415 and C409, R416 and C407 have constituted two groups of differential circuits, the square wave of U3 output is converted to the spike ripple, the output waveform of this circuit only reflects the sudden change part of importing waveform, and rising edge and the trailing edge of namely importing square wave just have output, to then not output of constant portion.The width relevant with the value of R415 * C409 and R416 * C407 (being the time constant of circuit) of narrow pulse waveform of output is worth more for a short time, and impulse waveform is just more narrow.This two-way narrow pulse waveform is delivered to signal isomorphism module through pulse transformer T1-1 and the T2-1 of magnetic isolation module respectively.
Fault time-delay automatic reset circuit mainly is made of triode Q401-Q405, resistance R 407-R414, capacitor C 401-C405 and U402, and wherein U402 is monostable flipflop.When breaking down; detect the enable signal of protection module output through magnetic isolation module T1-1 or T2-2 back transfer; produce a reverse spike; this pulse meeting triggers Q405 or Q404 conducting; capacitor C 405 is recharged; voltage is elevated to high level; make triode Q403 conducting; the 2 pin level of U402 are pulled to low level; monostable flipflop is triggered, and the 3 pin output levels upset of U402 triggers Q402; the conducting meeting of Q402 causes the level of 9 pin of 2 pin of U401A and U401C to be dragged down, and makes the output of U401A and U401C be high level.Monostable flipflop output level upset retention time (time of delay) is determined by the value of R410 * C401.
As shown in Figure 5, the present invention's signal reconstruction module one and signal reconstruction module two of possessing the high power module high frequency driver of the leading mechanism of non-nerve mainly is made of high-frequency narrow-pulse signal conditioning circuit and pulse shaper.The high frequency weak current protection circuit filtering partial noise signal that the high-frequency narrow-pulse signal that transmitted from magnetic isolation module transformer T1-2 (or T2-2) constitutes through ZD601, D601 and D602 also carries out after the antistatic protection; after the π type structure RC passive filtering conditioning through C602, C603 and R604 formation, be input to Schmidt trigger U601-U603 and carry out waveform shaping and logical process.Wherein, the fault-signal input comes from the detection protection module, and low level enables, under normal operation, this input signal is high level, at this moment, what coupling passed over as T1-2 is positive pulse signal, and then 1 pin of U601 is high level, and 2 pin are high level, then U601 exports high level, U602 output also is high level, and U604 is low level, and U605 is high level, the then P channel-type MOSFET conducting of U606, N channel-type MOSFET turn-offs; Otherwise in like manner as can be known, what coupling passed over as T1-2 is undersuing, and then the P channel-type MOSFET of U606 turn-offs, and MOSFET is open-minded for the N channel-type, so just can provide the positive and negative driving signal corresponding with the pwm signal duty ratio to power amplifier module; But when fault-signal was low level, U604 exported high level, and the U605 output low level, two MOSFET of U606 all close.When fault-signal was converted to low level from high level, the triode Q601 conducting that is triggered produced a narrow pulse signal and is delivered to logic processing module through T1-2.
As shown in Figure 6, the present invention's power amplifier module one and power amplifier module two of possessing the high power module high frequency driver of the leading mechanism of non-nerve mainly is made of resistance R 801-R802, triode Q801-Q804, diode D801-D802 etc.The positive negative wave of signal reconstruction module output is through resistance R 801 input power amplification modules, as the waveform of input be on the occasion of, then Q801 and Q802 conducting simultaneously, Q803 and Q804 shutoff, at this moment the output GA of power amplifier module is the forward drive waveform, and it is open-minded to drive IGBT; When the input waveform is negative value, Q803 and Q804 conducting simultaneously, Q801 and Q802 turn-off simultaneously, and at this moment the output GA of power amplifier module oppositely turn-offs waveform, drives IGBT and turn-offs; When no input signal, because of the existence of negative voltage V-, Q803 and Q804 conducting, and Q801 and Q802 turn-off, this moment, the output GA of power amplifier module oppositely turn-offed waveform, guaranteed the work safety of IGBT.
Above-described embodiment is preferred implementation of the present invention; but embodiments of the present invention are not restricted to the described embodiments; other any do not deviate from change, the modification done under spiritual essence of the present invention and the principle, substitutes, combination, simplify; all should be the substitute mode of equivalence, be included within protection scope of the present invention.
Claims (8)
1. one kind possesses the leading machine-processed high power module high frequency driver of non-nerve, it is characterized in that: by the Signal interface module one and the Signal interface module two that are used for compatible with digital amount and analog quantity pwm signal, mode selection module, the fault output module, logic processing module with the modulation of pwm signal interlock protection and high-frequency narrow-pulse and fault time-delay auto-reset function, the DC/DC supply module one and the DC/DC supply module two that possess input single channel+15V and output isolated form two-way ± 18V voltage capability, the signal reconstruction module one and the signal reconstruction module two that possess the shaping of high-frequency narrow-pulse signal condition and interlock protection, possess the detection protection module one of the leading mechanism of non-nerve and detect protection module two, power amplifier module one, power amplifier module two and magnetic isolation module connect and compose as follows: described Signal interface module one is connected the input of digital quantity or analog quantity pwm signal with the input of Signal interface module two, output connects logic processing module respectively; Described logic processing module also links to each other with mode selection module, fault output module and magnetic isolation module respectively; Described magnetic isolation module also links to each other with signal reconstruction module two with detection protection module one, detection protection module two, signal reconstruction module one respectively; An output of described detection protection module one also links to each other with power amplifier module one, and an output that detects protection module two also links to each other with power amplifier module two; An output of described signal reconstruction module one also links to each other with power amplifier module one, and an output of signal reconstruction module two also links to each other with power amplifier module two; Described power amplifier module one and the external power model of power amplifier module two outputs; DC/DC supply module one and DC/DC supply module two external power supplys.
2. the high power module high frequency driver that possesses the leading mechanism of non-nerve according to claim 1, it is characterized in that: it is consistent with the internal structure that detects protection module two to detect protection module one, constitutes by the IGBT overcurrent/short-circuit detecting circuit that possesses non-neural protection in advance mechanism, driver module undervoltage detection circuit, logic chip U4 and overheating detection circuit; The signal of described IGBT overcurrent/short-circuit detecting circuit, driver module undervoltage detection circuit and overheating detection circuit is all as the input signal of logic chip U4, and the output of described logic chip U4 is connected with the input of power amplifier module one with power amplifier module two.
3. the high power module high frequency driver that possesses the leading mechanism of non-nerve according to claim 2 is characterized in that: described IGBT overcurrent/short-circuit detecting circuit is interconnected to constitute by being used for operational amplifier U1, resistance R 1-R3 and Rce, capacitor C ce, power supply Vdc1-Vdc2, switch S and diode D3 that IGBT short circuit/overcurrent identification and blind area time controls; Described driver module undervoltage detection circuit is by being interconnected to constitute for producing internal reference voltage voluntarily and carrying out under-voltage relatively voltage stabilizing didoe ZD1-ZD2, diode D1-D2, resistance R 8-R14, capacitor C 2, triode Q1-Q2 and the operational amplifier U2 of identification; Described overheating detection circuit is interconnected to constitute by the voltage comparator circuit that resistance R 4-R6 and R15, capacitor C 1, thermistor R7 and integrated transporting discharging chip U3 form.
4. the high power module high frequency driver that possesses the leading mechanism of non-nerve according to claim 1, it is characterized in that: described DC/DC supply module one is consistent with the internal structure of DC/DC supply module two, by be used for to realize 1 tunnel+15V power supply produce two groups of isolated forms ± pulsewidth generation circuit and the DC/DC high frequency switching inverter device of 18V two-way output voltage connect and compose; Described pulsewidth generation circuit is by the pulse width modulating chip U8, the capacitor C 16-C18 that recommend pwm signal for generation of the two-way high frequency and C21, resistance R 25-R27 and drive resistance R 21-R24 and connect and compose; Described DC/DC high frequency switching inverter device is by adopting two-wire and around structure with finish the power transmission and export the voltage of two groups ± 18V, be used for transmitting forward and oppositely high isolated form pulse transformer, high frequency power field effect transistor, electric capacity, voltage stabilizing didoe and the rectifier diode of burst pulse control signal connect and compose.
5. the high power module high frequency driver that possesses the leading mechanism of non-nerve according to claim 1, it is characterized in that: described logic processing module is connected and composed by signal interlock protection circuit, burst pulse modulation circuit and fault time-delay automatic reset circuit; Described signal interlock protection circuit is connected and composed by resistance R 400-R406, diode D401-D406, triode Q402 and 4 NAND gate Schmidt trigger U401A-U401D of possessing high frequency weak current electrostatic defending, signal interlocking and waveform shaping function; Described burst pulse modulation circuit connects and composes by being used for that square wave rising edge and trailing edge are modulated into the MOSFET driving amplifier U3 of positive and negative burst pulse and constant portion no-output, two groups of differential circuit C406-C409, resistance R 415-R416 and resistance capacitor device; Monostable flipflop U402, triode Q401-Q405, resistance R 407-R414 and capacitor C 401-C405 that described fault time-delay automatic reset electro route possesses the automatic locking signal output of fault and fault time-delay auto-reset function connect and compose.
6. the high power module high frequency driver that possesses the leading mechanism of non-nerve according to claim 1, it is characterized in that: described signal reconstruction module one is consistent with signal reconstruction module two internal structures, connects and composes by high-frequency narrow-pulse signal conditioning circuit and pulse shaper; The bandpass filtering π type structure RC passive filter that described high-frequency narrow-pulse signal conditioning circuit is made up of the voltage stabilizing didoe ZD601 that possesses high frequency weak current safeguard function, diode D601 and D602, capacitor C 602 and C603 and resistance R 604 is interconnected to constitute; Described pulse shaper is connected and composed by the Schmidt trigger U601-U603 that possesses waveform shaping and signal logic disposal ability, mosfet driver U604-U605, two N and P channel-type switch mosfet U606 and the peripheral circuit be made up of resistance, electric capacity and voltage-stabiliser tube.
7. the high power module high frequency driver that possesses the leading mechanism of non-nerve according to claim 1, it is characterized in that: described power amplifier module one is consistent with power amplifier module two internal structures, produces the forward drive waveform and resistance R 801-R802, the triode Q801-Q804 and the diode D801-D802 that oppositely turn-off waveform and export negative voltage when the no control signal input connect and compose by being used for according to control signal.
8. the high power module high frequency driver that possesses the leading mechanism of non-nerve according to claim 1, it is characterized in that: described Signal interface module one is consistent with the internal structure of Signal interface module two.
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| CN105915204A (en) * | 2016-06-17 | 2016-08-31 | 南京邮电大学 | Soft starting circuit for output signal of digital signal source chip |
| CN107947771A (en) * | 2017-12-08 | 2018-04-20 | 宁波拓邦智能控制有限公司 | A kind of IGBT protection circuit |
| CN108170048B (en) * | 2017-12-19 | 2023-07-04 | 嘉兴市恒创电力设备有限公司 | Intelligent switch and intelligent control method |
| CN109212433B (en) * | 2018-10-18 | 2024-03-26 | 中国科学院电工研究所 | Inverter IGBT fault early warning and protection circuit |
| CN109450230B (en) * | 2018-10-24 | 2020-06-02 | 南京轨道交通系统工程有限公司 | IGBT gate driver based on analog circuit |
| CN110007132B (en) * | 2019-05-08 | 2024-03-15 | 南京芯耐特半导体有限公司 | Low-voltage zero-power consumption CMOS power-on detection circuit |
| CN111162758B (en) * | 2020-01-10 | 2020-08-25 | 荣湃半导体（上海）有限公司 | Low-jitter filter |
| CN112653425B (en) * | 2020-11-27 | 2023-06-02 | 凯迈（洛阳）测控有限公司 | Universal simulation conditioning module |
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| US5051609A (en) * | 1990-10-02 | 1991-09-24 | Teledyne Inet | Simplified driver circuit for solid-state power switches |
| CN1303750C (en) * | 2003-03-17 | 2007-03-07 | 华南理工大学 | Soft-switch hidden-arc welding contrarariant power supply with double closed-loop control |
| CN100574102C (en) * | 2006-08-30 | 2009-12-23 | 广州金升阳科技有限公司 | The processing method of IGBT driver and drive signal thereof |
| CN201270500Y (en) * | 2008-07-29 | 2009-07-08 | 南京华士电子科技有限公司 | Novel IGBT driver |
| CN202364191U (en) * | 2011-11-01 | 2012-08-01 | 华南理工大学 | High power module high frequency driver possessing nonneural advanced mechanisms |
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