CN102510276A - Big-power module high-frequency driver with non-neural advance mechanism - Google Patents
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- 230000032683 aging Effects 0.000 description 2
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- 238000012938 design process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000002346 musculoskeletal system Anatomy 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000003534 oscillatory effect Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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- 102220013931 rs2746462 Human genes 0.000 description 1
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Abstract
The invention provides a big-power module high-frequency driver with a non-neural advance mechanism, which is formed by connecting a signal interface module 1, a signal interface module 2, a mode selection module, a fault output module, a logic processing module, a direct circuit (DC)/DC power supply module 1, a DC/DC power supply module2, a signal reconfiguration module 1, a signal reconfiguration module 2, a detection protecting module 1, a detection protecting module 2, a power amplification module 1, a power amplification module 2 and a magnetic isolation module, wherein the logic processing module has functions of pulse-width modulation (PWM) signal interlocking protection, high-frequency narrow-pulse modulation and fault time-delay automatic resetting; the DC/DC power supply module 1 and the DC/DC power supply module 2 both have the capability of inputting one way+15V voltage and outputting isolated double-way +/-18V voltage; the signal reconfiguration module 1 and the signal reconfiguration module 2 both have the functions of regulating and shaping a high-frequency narrow-pulse module signal and carrying out interlocking protection; and the detection protecting module 1 and the detection protecting module 2 are both provided with the non-neural advance mechanism. The high-frequency driver has the advantages of good protection effect, low application cost, good technological adaptability, strong driving power, good isolation performance, high voltage isolation tolerance and the like.
Description
Technical field
The present invention relates to a kind of high power module high frequency driver, particularly a kind of high power module high frequency driver that possesses the leading mechanism of non-nerve.
Background technology
High-power/the superpower inverter (high-power communication power supply, electrochemical power source, large-scale charge power supply device, electric automobile energy conversion equipment etc.) need jumbo power model or the parallel connection of a plurality of power model to use, to the power grade and the higher requirement (maximum drive power can reach 20W) of performance proposition of driver.At present, both at home and abroad the high-power driving device of main flow mainly comprises with EXB841 and is the light isolated form device of representative and is the magnetic isolated form device of representative with 2SD315A and pulse transformer etc.The driving power of light isolated form device is generally less, and time of delay is longer, and isolation voltage is lower; The cost of pulse transformer is lower, but when high-power driving was used, volume was big, and drive waveforms is yielding, when soft switch application, is prone to the drive waveforms oscillatory occurences; The driving force of 2SD315A is good, and reliability is high, and defencive function is perfect, but application cost is higher.
Along with reverse frequency (novel High Speed I GBT module operating frequency can reach 100kHz) improves constantly, to the also corresponding raising of the requirement of drive operation frequency; For simplifying power supply manufacturing and maintenance, driver preferably adopts modularized design; Large power inverter power source needs jumbo IGBT module or the parallel connection of a plurality of IGBT module to use, and requires driver that shorter propagation delay time, reliable and perfect defencive function and high-isolating and good antijamming capability are arranged; In addition, also to simplify application, reduce whole application cost driving the requirement of power supply.Therefore, researching and developing novel high-frequency driver and the realization that a driving force is strong, reliability is high and cost is low domesticizes significant.
At present, the isolation of drive signal has light to isolate and magnetic isolation dual mode.The isolation voltage of light isolation method is relatively low, has the problem of aspects such as transmission delay, aging and reliability.And adopt pulse transformer isolation method (magnetic isolation) can realize higher relatively isolation voltage, and reliability is higher, and transmission delay is little, can transmit the pulse signal of upper frequency, does not have aging problem.Therefore, most isolation transmission of adopting pulse transformer to accomplish drive signal as isolated component in the high pressure IGBT driver.But traditional driving requires the control impuls duty ratio less than 50% with pulse transformer usually; Simultaneously, the saturation problem of magnetic core of pulse transformer has also limited the ON time of control impuls; In addition, also have the drive waveforms problem of dtmf distortion DTMF, especially when driving high-power IGBT parallel transistor group, because the input capacitance of IGBT is bigger, the drive pulse waveform of the secondary output of pulse transformer is difficult to satisfy the driving requirement.
In the high-power application scenario,, necessarily require to have very high isolation voltage tolerance between the driver primary and secondary according to different busbar voltages.The factor that another one must be considered is the dv/dt tolerance, when the IGBT speed-sensitive switch, possibly produce very high dv/dt, and this signal can pass through isolating transformer or pulse transformer is coupled to elementary control circuit, control circuit is produced disturb.In addition, drive the also more complicated of supplying power, device is more, and is not ideal enough aspect isolation and wiring effect.
At present, generally judge through the value that detects IGBT collection emitter voltage Vce whether IGBT is in short circuit or over-current state, and realize short circuit or overcurrent protection according to corresponding value.Since IGBT at the collector voltage Vce at the initial stage of opening than higher; If this moment, protective circuit work possibly cause misoperation; Influence protection effect; Therefore rational and effective Vce value decision circuitry must be arranged, confirm that the Vce rising of IGBT is because be in the initial stage of opening or be in short circuit or over-current state.
In addition, for reducing and suppressing the peak voltage that high power module produces when the high speed turn-off, driver needs the accurately residing various abnormalities of identification power model, and can in time take the corresponding protection action according to the abnormality type.Traditional protected mode; Usually detect unusual condition by testing circuit, feed back to controller then, by controller failure judgement type; Take the corresponding protection action then; Because it is longer to detect the time of feedback information and processing, the protection action can often lag behind, and is not prompt enough rapidly to the protection response of IGBT power model.The musculoskeletal system of human body can be adjusted rapidly according to its distortion situation during external force in opposing, and before the fastest neural reflex, just can accomplish, and Here it is, and non-nerve controls that feedback mechanism---machinery feeds back in advance.If can the leading mechanism of this non-nerve be introduced in the high frequency driver of high power module, can realize in time and effectively protection of power model is then had important reference and is worth.
But according to retrieval, also do not have at present merge above-mentionedly comprise high frequency Anti-Jamming Technique, high-speed isolated technology, based on the low cost high power module high-frequency drive technology of the protection in advance mechanism of non-neural feedback and the effective recognition methods of abnormality etc. and the relevant report of product.
Summary of the invention
The objective of the invention is to propose a kind of high power module high frequency driver that possesses the leading mechanism of non-nerve to the problem of high power module high frequency driver existence both at home and abroad at present and relevant technology trends.The design of this driver applications high speed circuit, high frequency is anti-interference and technology such as high-speed isolated; Adopt reliability design approach; Based on non-neural protection in advance Mechanism Study developing low-cost, high performance high-power high-frequency driver module, and the performance that possesses reliable driving 400A/1700V IGBT power tube and drive 3 300A/1700VIGBT parallel connection power tube groups.
In order to achieve the above object; The present invention is achieved through following technical proposals: a kind of high power module high frequency driver that possesses the leading mechanism of non-nerve; It is characterized in that: connected and composed as follows with detection protection module two, power amplifier module one, power amplifier module two and magnetic isolation module by the Signal interface module one that is used for compatible with digital amount and analog quantity pwm signal and Signal interface module two, mode selection module, fault output module, the logic processing module with pwm signal interlock protection and high-frequency narrow-pulse modulation and fault time-delay auto-reset function, the DC/DC supply module one and the DC/DC supply module two that possess input single channel+15V and output isolated form two-way ± 18V voltage capability, the signal reconstruction module one and the signal reconstruction module two that possess shaping of high-frequency narrow-pulse signal condition and interlock protection, the detection protection module one that possesses the leading mechanism of non-nerve: said Signal interface module one is connected the input of digital quantity or analog quantity pwm signal with the input of Signal interface module two, output connects logic processing module respectively; Said logic processing module also links to each other with mode selection module, fault output module and magnetic isolation module respectively; Said magnetic isolation module also links to each other with signal reconstruction module two with detection protection module one, detection protection module two, signal reconstruction module one respectively; An output of said detection protection module one also links to each other with power amplifier module one, and an output that detects protection module two also links to each other with power amplifier module two; An output of said signal reconstruction module one also links to each other with power amplifier module one, and an output of signal reconstruction module two also links to each other with power amplifier module two; Said power amplifier module one and the external power model of power amplifier module two outputs;
DC/DC supply module one and DC/DC supply module two external power supplys.DC/DC supply module one is all module for power supply of driver with DC/DC supply module two.
It is consistent with the internal structure that detects protection module two to detect protection module one, constitutes by the IGBT overcurrent/short-circuit detecting circuit, driver module undervoltage detection circuit, logic chip U4 and the overheating detection circuit that possess non-neural protection in advance mechanism; The signal of said IGBT overcurrent/short-circuit detecting circuit, driver module undervoltage detection circuit and overheating detection circuit is all as the input signal of logic chip U4, and the output of said logic chip U4 is connected with the input of power amplifier module one with power amplifier module two.
Said IGBT overcurrent/short-circuit detecting circuit is interconnected by operational amplifier U1, resistance R 1-R3 and the Rce, capacitor C ce, power supply Vdc1-Vdc2, switch S and the diode D3 that are used for IGBT short circuit/overcurrent identification and the control of blind area time and constitutes; Said driver module undervoltage detection circuit interconnects and constitutes by being used for producing internal reference voltage voluntarily and carrying out under-voltage relatively voltage stabilizing didoe ZD1-ZD2, diode D1-D2, resistance R 8-R14, capacitor C 2, triode Q1-Q2 and the operational amplifier U2 of identification; The voltage comparator circuit that said overheating detection circuit is made up of resistance R 4-R6 and R15, capacitor C 1, thermistor R7 and integrated transporting discharging chip U3 interconnects and constitutes.
Said DC/DC supply module one is consistent with the internal structure of DC/DC supply module two, by be used to realize 1 tunnel+15V power supply produce two groups of isolated forms ± the pulsewidth generation circuit and the DC/DC high frequency switching inverter device of 18V two-way output voltage connect and compose; Said pulsewidth generation circuit is recommended pulse width modulating chip U8, capacitor C 16-C18 and the C21 of pwm signal, resistance R 25-R27 and driving resistor R21-R24 and is connected and composed by being used to produce the two-way high frequency; Said DC/DC high frequency switching inverter device by adopt two-wire and around structure with accomplish that the voltage of two groups ± 18V is exported in the power transmission, the high isolated form pulse transformer, high frequency power FET, electric capacity, voltage stabilizing didoe and the rectifier diode that are used to transmit forward and reverse burst pulse control signal connects and composes.
Said logic processing module is connected and composed by signal interlock protection circuit, burst pulse modulation circuit and fault time-delay automatic reset circuit; Said signal interlock protection circuit is connected and composed by the resistance R 400-R406 that possesses high frequency weak current electrostatic defending, signal interlocking and waveform shaping function, diode D401-D406, triode Q402 and 4 NAND gate Schmidt trigger U401A-U401D; Said burst pulse modulation circuit by be used for square wave rising edge and trailing edge be modulated into the MOSFET driving amplifier U3 of positive and negative burst pulse and constant portion no-output, two groups of differential circuit C406-C409, resistance R 415-R416 and resistance capacitor devices connect and compose; Monostable flipflop U402, triode Q401-Q405, resistance R 407-R414 and capacitor C 401-C405 that said fault time-delay automatic reset electro route possesses automatic locking signal output of fault and fault time-delay auto-reset function connect and compose.
Said signal reconstruction module one is consistent with signal reconstruction module two internal structures, connects and composes by high-frequency narrow-pulse signal conditioning circuit and pulse shaper; The bandpass filtering π type structure RC passive filter that said high-frequency narrow-pulse signal conditioning circuit is made up of the voltage stabilizing didoe ZD601 that possesses high frequency weak current safeguard function, diode D601 and D602, capacitor C 602 and C603 and resistance R 604 interconnects and constitutes; Said pulse shaper is connected and composed by the Schmidt trigger U601-U603 that possesses waveform shaping and signal logic disposal ability, mosfet driver U604-U605, two N and P channel-type switch mosfet U606 and the peripheral circuit be made up of resistance, electric capacity and voltage-stabiliser tube.
Said power amplifier module one is consistent with power amplifier module two internal structures, connects and composes with reverse resistance R 801-R802, triode Q801-Q804 and the diode D801-D802 that turn-offs waveform and export negative voltage when the no control signal input by being used for producing the forward drive waveform according to control signal.
Said Signal interface module one is consistent with the internal structure of Signal interface module two.
Principle of the present invention is such: this driver can work in single channel and drive and the half-bridge driven pattern, confirms through the high-low level signal of mode selection module.Signal interface module one and Signal interface module two correspond respectively to the two-way pwm signal of input, can compatible with digital amount pwm signal, and also direct input analog amount pwm signal.Two DC/DC supply modules of driver only need two-way+15V direct current supply can satisfy all power reguirements of driver, have simplified the manufacturing and the maintenance of power supply.Logic processing module one is to realize the signal interlock function, enables through mode selection module, produces straight-through phenomenon in the time of can preventing half-bridge driven; The 2nd, accomplish the modulation of drive pulse signal, pulse signals is modulated, and its rising edge and trailing edge is converted into the narrow pulse signal of two anti-phases; The 3rd, export corresponding information to the fault output module according to the fault-signal that the magnetic isolation module passes over; The 4th, realize fault time-delay auto-reset function.The magnetic isolation module is mainly accomplished the high-speed transfer of narrow pulse signal and is isolated with reliable.The high-frequency narrow-pulse signals that signal reconstruction module one and signal reconstruction module two mainly pass over the magnetic isolation module carry out conversion and reconstruct to obtain satisfactory drive waveforms; Because pulse transformer only transmits the pulse signal of narrower in width; Therefore, the duty ratio of drive signal can have very wide excursion; Because the transformer transmission is narrow pulse signal, its magnetic core and winding be unusual compact all, and leakage inductance and distributed capacitance are very little accordingly, and the design of pulse transformer and the transmission of signal are also more favourable.Detecting protection module one and detection protection module two pairs of IGBT on off states, driving voltage value and temperature etc. detects; In case occur unusual; Be delivered to the fault output module through magnetic isolation module and logic processing module on the one hand,, make the soft shutoff of drive waveforms perhaps directly block output on the other hand according to direct power controlling amplification module one of fault type and power amplifier module two; Realize non-neural protection in advance, improve the protection effect.
Compared with prior art, the present invention has following advantage and beneficial effect:
1, better protection effect.Owing to adopted non-neural protection in advance mechanism, to the protection of power device more directly, more fast and more accurate;
2, lower application cost.Owing to adopted magnetic isolated form pulse signal modulation method, pulse transformer only need transmit the very narrow high-frequency pulse signal of pulsewidth, and pulse transformer is very small and exquisite; Simultaneously, high DC/DC supply module of isolating only needs two-way+15V power supply just can satisfy all power demands of this driver, has greatly simplified peripheral power supply design and manufacturing process.
3, Technological adaptability is better.Because problems such as pulse transformer only need the very narrow pulse signal of couple transmission, and the high duty ratio magnetic core that does not exist traditional pulse transformer to face is saturated, driving frequency and duty ratio all can change in wide range; Driver can the compatible with digital signal and the input of analog signal; In addition, can also select drive operation in half-bridge or single channel drive pattern through mode selection module; Driver adopts modular organization, and compact conformation only needs external two-way+15V power supply just can work.Therefore, has better Technological adaptability.
4, driving power is stronger.Because driving power depends on the ability of power amplifier module and DC/DC supply module, and the two all can strengthen through the parameter that improves its high frequency power FET, driving power can be up to 20W.
5, isolation performance is better, and the voltage isolation tolerance is higher.
Description of drawings
Fig. 1 is the general structure block diagram that the present invention possesses the high power module high frequency driver of the leading mechanism of non-nerve;
Fig. 2 is the detection protection module one of the present invention's high power module high frequency driver of possessing the leading mechanism of non-nerve or the fundamental diagram that detects protection module two;
Fig. 3 is the DC/DC supply module one of the present invention's high power module high frequency driver of possessing the leading mechanism of non-nerve or the fundamental diagram of DC/DC supply module two;
Fig. 4 is that the present invention possesses the non-nerve fundamental diagram of the logic processing module of the high power module high frequency driver of mechanism in advance;
Fig. 5 is the signal reconstruction module one of the present invention's high power module high frequency driver of possessing the leading mechanism of non-nerve or the fundamental diagram of signal reconstruction module two;
Fig. 6 is the power amplifier module one of the present invention's high power module high frequency driver of possessing the leading mechanism of non-nerve or the fundamental diagram of power amplifier module two.
Embodiment
Below in conjunction with embodiment and accompanying drawing the present invention is described in further detail, but execution mode of the present invention is not limited thereto.
Embodiment
As shown in Figure 1, the high power module high frequency driver that the present invention possesses the leading mechanism of non-nerve mainly is made up of Signal interface module 1 and Signal interface module 2 102, mode selection module 200, fault output module 300, logic processing module 400, DC/DC supply module 1 and DC/DC supply module 2 502, signal reconstruction module 1 and signal reconstruction module 2 602, detection protection module 1 and detection protection module 2 702, power amplifier module 1 and power amplifier module 2 802 and magnetic isolation module 900.Wherein, Signal interface module 1 is just the same with the internal structure of Signal interface module 2 102, DC/DC supply module 1 and DC/DC supply module 2 502, signal reconstruction module 1 and signal reconstruction module 2 602, detection protection module 1 and detection protection module 2 702, power amplifier module 1 and power amplifier module 2 802.Signal interface module 1 is connected the input of digital quantity or analog quantity pwm signal with an end of Signal interface module 2 102, an end connects logic processing module 400; Logic processing module 400 links to each other with Signal interface module 1, Signal interface module 2 102, mode selection module 200, fault output module 300 and magnetic isolation module 900 respectively; DC/DC supply module 1 and DC/DC supply module 2 502 provide power supply for all modules of driver; Magnetic isolation module 900 links to each other with signal reconstruction module 2 602 with logic processing module 400, detection protection module 1 and detection protection module 2 702 and signal reconstruction module 1 respectively; Detecting protection module 1 links to each other with power amplifier module 1 with magnetic isolation module 900 respectively; Detecting protection module 2 702 links to each other with power amplifier module 2 802 with magnetic isolation module 900 respectively; Signal reconstruction module 1 links to each other with power amplifier module 1 with magnetic isolation module 900 respectively; Signal reconstruction module 2 602 links to each other with power amplifier module 2 802 with magnetic isolation module 900 respectively; The output of power amplifier module 1 and power amplifier module 2 802 is connected power model respectively, realizes the driving work of power model.
As shown in Figure 2; Detection protection module one or detection protection module two that the present invention possesses the high power module high frequency driver of the leading mechanism of non-nerve mainly are made up of three parts; Be that IGBT overcurrent/short-circuit detecting circuit, driver module undervoltage detection circuit and overheating detection circuit constitute; Three detection signals input logic chip U4 respectively judge, any one in three signals of input U4 level takes place changes and can make that all the output level of U4 overturns, the output of the direct power controlling amplification module of this signal; Make the drive signal of power amplifier module progressively reduce, realize the soft shutoff of IGBT.
Overheated detection protective circuit mainly is made up of resistance R 4-R6 and R15, capacitor C 1 and thermistor R7 and integrated transporting discharging chip U3.When temperature changed, the resistance value of R7 can be along with change, and the dividing potential drop on it is also corresponding to change, and when its voltage surpassed the voltage on the R4, the homophase of comparator U4 and reverse input end signal magnitude changed, and made the U4 output level overturn.
Operational amplifier U1, resistance R 1-R3 and Rce, capacitor C ce, power supply Vdc1-Vdc2, switch S and diode D3 have constituted IGBT overcurrent/short-circuit detecting circuit, and wherein Rg is a driving resistor.The present invention has made full use of the operating characteristic of IGBT; When short circuit or overcurrent appear in IGBT, its service area will be withdrawed from the saturation region and the c of IGBT, e voltage across poles Vce are raise, and make the corresponding rising of anode potential of series diode D3; When surpassing the threshold voltage of setting; The U1 upset makes the output level upset of U4, makes the protective circuit action.Because in the starting stage that IGBT opens; The Vce value is higher, if protective circuit action this moment can cause mistake to turn-off, the present invention solves this problem through a simple blind area time circuit very cleverly for this reason; Mainly by switch S, resistance R ce, capacitor C ce constitutes for it.When IGBT turn-offed, S was open-minded, and capacitor C ce is charged to 15V by Vdc1; When IGBT opened, S turn-offed, and Cce electric capacity discharges through Rce; The voltage at its two ends is descended by+15V gradually; Make that opening the reference voltage at initial stage at IGBT is higher than detection voltage, guarantee that U1 can not produce upset at the IGBT initial stage of opening, and prevents the protective circuit misoperation.
Voltage stabilizing didoe ZD1-ZD2, diode D1-D2, resistance R 8-R14, capacitor C 2, triode Q1-Q2 and operational amplifier U2 have constituted undervoltage detection circuit.Wherein, voltage stabilizing didoe ZD1 is equivalent to the internal drive source of stable pressure, to undervoltage detection circuit a voltage reference value is provided.When the supply power voltage V+ that causes exporting because of some reason when the DC/DC of driver supply module one and DC/DC power supply mould two is higher than voltage reference value; D1 meeting conducting; Q1 is open-minded because of forward voltage drives, and causes the base voltage of Q2 to be pulled down to ground and turn-offs, because Q2 turn-offs; Make the D2 forward conduction, be higher than the A port for the B port incoming level signal of U2.If V+ is lower than reference voltage value; Based on above-mentioned same principle, the B port incoming level signal of Q2 can be dragged down, less than the A port level of U2; Thereby make the outputs level signals of U2 overturn; Cause the upset of U4 output level, the driving voltage of power controlling amplification module slowly reduces, and realizes soft shutoff.The present invention adopts so non-neural protection in advance mechanism to shorten the time of protection action; Promptly no matter be overcurrent, short circuit, under-voltage or be overheated; In case detecting fault takes place; The direct power controlling amplification module of fault detect protection module makes it slowly to reduce driving voltage (soft shutoff), thereby protects the safety of IGBT to greatest extent.
As shown in Figure 3; The DC/DC supply module one that the present invention possesses the high power module high frequency driver of the leading mechanism of non-nerve mainly is made up of pulsewidth generation circuit, DC/DC high frequency switching inverter device with DC/DC supply module two, by 1 tunnel+15V power supply produce two groups isolate fully ± the 18V dual-output power supply.Wherein, pulsewidth generation circuit is made up of pulse width modulating chip U8, capacitor C 16-C18 and C21, resistance R 25-R27 and driving resistor R21-R24, mainly produces the two-way high frequency and recommends pwm signal, in order to two groups of DC/DC inverters of drive controlling; Pulse width modulating chip U8 is SG3525; High frequency power FET U5A, U5B, C16, T1-2, D8A-D15A, ZD6A-ZD7A, C15A, C18A constitute first group of DC/DC inverter, generation ± 18V two-way output voltage; High frequency power FET U6A, U6B, C20, T2-2, D8B-D15B, ZD6B-ZD7B, C15B, C18B constitute second group of DC/DC inverter, produce other one group ± 18V two-way output voltage; Transformer T1-2 of the present invention and T2-2 all adopt two-wire and around structure; Not only want transmitted power; Export two groups ± 18V voltage, also will transmit through the narrow pulse signal after the modulation of signal modulation module, transformer T1-2 promptly of the present invention and T2-2 respectively with the magnetic isolation module in transformer T1-1 and the shared magnetic core of T2-1; In addition, the T1-1 of magnetic isolation module and T2-1 also want back transfer to give logic processing module by the fault-signal that detects protection module output.Through this innovation structure, reduced cost of manufacture significantly, the structure of driver is more compact, and volume is more small and exquisite.
As shown in Figure 4, the logic processing module that the present invention possesses the high power module high frequency driver of the leading mechanism of non-nerve mainly is made up of signal interlock protection circuit, burst pulse modulation circuit and fault time-delay automatic reset circuit.Wherein, INA and INB are two-way input pwm signal, and FAULT is the output fault-signal.
The signal interlock protection circuit mainly is made up of resistance R 400-R406, diode D401-D406, triode Q402 and NAND gate Schmidt trigger U401.Wherein, D401,402 is BAV99, constitutes 1 group of high frequency weak current electrostatic discharge protection circuit; D403 and D404 are BAV99 also, constitute other one group of high frequency weak current electrostatic discharge protection circuit, the destruction that prevents high-frequency noise or interference source; And U401 is 4 NAND gate Schmidt triggers, and there are 4 Schmidt triggers inside, is respectively U401A; U401B, U401C and U401D.The INA input signal is imported U401D simultaneously through getting into 1 pin of U401A after the high frequency weak current electrostatic discharge protection circuit, warp and non-after import 9 pin of U401C, carry out interlocking with another road pwm signal INB of 8 pin of input U401C; Same, the input signal of INB also through introducing 2 pin of U401A after U401B and the non-processing, is realized interlocking with the INB signal, can prevent when the half-bridge mode of operation, to occur straight-through phenomenon in this way; INA and INB through carrying out waveform shaping behind U401A and the U401C, obtain the square wave of rule respectively; Simultaneously; 2 pin of U401A and 9 pin of U401C are connected to Q402 through diode D405 and D406 respectively, when fault takes place, and the Q402 conducting; The level of 9 pin that is equivalent to 2 pin and the U401C of U401A is dragged down, and makes the output of U401A and U401C be high level.
The burst pulse modulation circuit mainly is made up of U3, capacitor C 406-C409 and resistance R 415-R416, and wherein, U3 is the MOSFET driving amplifier; Mainly play the amplification of signal, R415 and C409, R416 and C407 have constituted two groups of differential circuits; Convert the square wave of U3 output into the spike ripple; The output waveform of this circuit only reflects the sudden change part of importing waveform, and rising edge and the trailing edge of promptly importing square wave just have output, to then not output of constant portion.The width relevant with the value of R415 * C409 and R416 * C407 (being the time constant of circuit) of narrow pulse waveform of output is worth more for a short time, and impulse waveform is just narrow more.This two-way narrow pulse waveform is delivered to signal isomorphism module through the pulse transformer T1-1 and the T2-1 of magnetic isolation module respectively.
Fault time-delay automatic reset circuit mainly is made up of triode Q401-Q405, resistance R 407-R414, capacitor C 401-C405 and U402, and wherein U402 is a monostable flipflop.When breaking down, the enable signal that detects protection module output produces a reverse spike through magnetic isolation module T1-1 or T2-2 back transfer; This pulse meeting triggers Q405 or Q404 conducting, and capacitor C 405 is recharged, and voltage is elevated to high level; Make triode Q403 conducting, the 2 pin level of U402 are pulled to low level, and monostable flipflop is triggered; The 3 pin output levels upset of U402; Trigger Q402, the conducting meeting of Q402 causes the level of 9 pin of 2 pin and the U401C of U401A to be dragged down, and makes the output of U401A and U401C be high level.Monostable flipflop output level upset retention time (time of delay) is confirmed by the value of R410 * C401.
As shown in Figure 5, the signal reconstruction module one that the present invention possesses the high power module high frequency driver of the leading mechanism of non-nerve mainly is made up of high-frequency narrow-pulse signal conditioning circuit and pulse shaper with signal reconstruction module two.The high frequency weak current protection circuit filtering partial noise signal that high-frequency narrow-pulse signal process ZD601, D601 and the D602 that transmitted from magnetic isolation module transformer T1-2 (or T2-2) constitutes also carries out after the antistatic protection; After the π type structure RC passive filtering conditioning through C602, C603 and R604 formation, be input to Schmidt trigger U601-U603 and carry out waveform shaping and logical process.Wherein, the fault-signal input comes from the detection protection module, and low level enables, under normal operation; This input signal is a high level, and at this moment, what come like the T1-2 couple transmission is positive pulse signal, and then 1 pin of U601 is a high level; 2 pin are high level, and then U601 exports high level, and U602 output also is high level, and U604 is a low level; And U605 is a high level, the then P channel-type MOSFET conducting of U606, and N channel-type MOSFET turn-offs; Otherwise, can know that in like manner what come like the T1-2 couple transmission is undersuing, then the P channel-type MOSFET of U606 turn-offs, and MOSFET is open-minded for the N channel-type, so just can the positive and negative drive signal corresponding with the pwm signal duty ratio be provided to power amplifier module; But when fault-signal was low level, U604 exported high level, and the U605 output low level, two MOSFET of U606 all close.When fault-signal when high level converts low level into, the triode Q601 conducting that is triggered produces a narrow pulse signal and is delivered to logic processing module through T1-2.
As shown in Figure 6, the power amplifier module one that the present invention possesses the high power module high frequency driver of the leading mechanism of non-nerve mainly is made up of resistance R 801-R802, triode Q801-Q804, diode D801-D802 etc. with power amplifier module two.The positive negative wave of signal reconstruction module output is through resistance R 801 input power amplification modules; As the waveform of input be on the occasion of, then Q801 and Q802 while conducting, Q803 and Q804 shutoff; At this moment the output GA of power amplifier module is the forward drive waveform, and it is open-minded to drive IGBT; When the input waveform is negative value, Q803 and Q804 conducting simultaneously, Q801 and Q802 turn-off simultaneously, and at this moment the output GA of power amplifier module is the reverse waveform that turn-offs, and drives IGBT and turn-offs; When no input signal, because of the existence of negative voltage V-, Q803 and Q804 conducting, and Q801 and Q802 turn-off, this moment, the output GA of power amplifier module was the reverse waveform that turn-offs, and guaranteed the work safety of IGBT.
The foregoing description is a preferred implementation of the present invention; But execution mode of the present invention is not restricted to the described embodiments; Other any do not deviate from change, the modification done under spirit of the present invention and the principle, substitutes, combination, simplify; All should be the substitute mode of equivalence, be included within protection scope of the present invention.
Claims (8)
1. one kind possesses the leading machine-processed high power module high frequency driver of non-nerve; It is characterized in that: connected and composed as follows with detection protection module two, power amplifier module one, power amplifier module two and magnetic isolation module by the Signal interface module one that is used for compatible with digital amount and analog quantity pwm signal and Signal interface module two, mode selection module, fault output module, the logic processing module with pwm signal interlock protection and high-frequency narrow-pulse modulation and fault time-delay auto-reset function, the DC/DC supply module one and the DC/DC supply module two that possess input single channel+15V and output isolated form two-way ± 18V voltage capability, the signal reconstruction module one and the signal reconstruction module two that possess shaping of high-frequency narrow-pulse signal condition and interlock protection, the detection protection module one that possesses the leading mechanism of non-nerve: said Signal interface module one is connected the input of digital quantity or analog quantity pwm signal with the input of Signal interface module two, output connects logic processing module respectively; Said logic processing module also links to each other with mode selection module, fault output module and magnetic isolation module respectively; Said magnetic isolation module also links to each other with signal reconstruction module two with detection protection module one, detection protection module two, signal reconstruction module one respectively; An output of said detection protection module one also links to each other with power amplifier module one, and an output that detects protection module two also links to each other with power amplifier module two; An output of said signal reconstruction module one also links to each other with power amplifier module one, and an output of signal reconstruction module two also links to each other with power amplifier module two; Said power amplifier module one and the external power model of power amplifier module two outputs; DC/DC supply module one and DC/DC supply module two external power supplys.
2. the high power module high frequency driver that possesses the leading mechanism of non-nerve according to claim 1; It is characterized in that: it is consistent with the internal structure that detects protection module two to detect protection module one, constitutes by the IGBT overcurrent/short-circuit detecting circuit, driver module undervoltage detection circuit, logic chip U4 and the overheating detection circuit that possess non-neural protection in advance mechanism; The signal of said IGBT overcurrent/short-circuit detecting circuit, driver module undervoltage detection circuit and overheating detection circuit is all as the input signal of logic chip U4, and the output of said logic chip U4 is connected with the input of power amplifier module one with power amplifier module two.
3. the high power module high frequency driver that possesses the leading mechanism of non-nerve according to claim 2 is characterized in that: said IGBT overcurrent/short-circuit detecting circuit is interconnected by operational amplifier U1, resistance R 1-R3 and the Rce, capacitor C ce, power supply Vdc1-Vdc2, switch S and the diode D3 that are used for IGBT short circuit/overcurrent identification and the control of blind area time and constitutes; Said driver module undervoltage detection circuit interconnects and constitutes by being used for producing internal reference voltage voluntarily and carrying out under-voltage relatively voltage stabilizing didoe ZD1-ZD2, diode D1-D2, resistance R 8-R14, capacitor C 2, triode Q1-Q2 and the operational amplifier U2 of identification; The voltage comparator circuit that said overheating detection circuit is made up of resistance R 4-R6 and R15, capacitor C 1, thermistor R7 and integrated transporting discharging chip U3 interconnects and constitutes.
4. the high power module high frequency driver that possesses the leading mechanism of non-nerve according to claim 1; It is characterized in that: said DC/DC supply module one is consistent with the internal structure of DC/DC supply module two, by be used to realize 1 tunnel+15V power supply produce two groups of isolated forms ± the pulsewidth generation circuit and the DC/DC high frequency switching inverter device of 18V two-way output voltage connect and compose; Said pulsewidth generation circuit is recommended pulse width modulating chip U8, capacitor C 16-C18 and the C21 of pwm signal, resistance R 25-R27 and driving resistor R21-R24 and is connected and composed by being used to produce the two-way high frequency; Said DC/DC high frequency switching inverter device by adopt two-wire and around structure with accomplish that the voltage of two groups ± 18V is exported in the power transmission, the high isolated form pulse transformer, high frequency power FET, electric capacity, voltage stabilizing didoe and the rectifier diode that are used to transmit forward and reverse burst pulse control signal connects and composes.
5. the high power module high frequency driver that possesses the leading mechanism of non-nerve according to claim 1 is characterized in that: said logic processing module is connected and composed by signal interlock protection circuit, burst pulse modulation circuit and fault time-delay automatic reset circuit; Said signal interlock protection circuit is connected and composed by the resistance R 400-R406 that possesses high frequency weak current electrostatic defending, signal interlocking and waveform shaping function, diode D401-D406, triode Q402 and 4 NAND gate Schmidt trigger U401A-U401D; Said burst pulse modulation circuit by be used for square wave rising edge and trailing edge be modulated into the MOSFET driving amplifier U3 of positive and negative burst pulse and constant portion no-output, two groups of differential circuit C406-C409, resistance R 415-R416 and resistance capacitor devices connect and compose; Monostable flipflop U402, triode Q401-Q405, resistance R 407-R414 and capacitor C 401-C405 that said fault time-delay automatic reset electro route possesses automatic locking signal output of fault and fault time-delay auto-reset function connect and compose.
6. the high power module high frequency driver that possesses the leading mechanism of non-nerve according to claim 1; It is characterized in that: said signal reconstruction module one is consistent with signal reconstruction module two internal structures, connects and composes by high-frequency narrow-pulse signal conditioning circuit and pulse shaper; The bandpass filtering π type structure RC passive filter that said high-frequency narrow-pulse signal conditioning circuit is made up of the voltage stabilizing didoe ZD601 that possesses high frequency weak current safeguard function, diode D601 and D602, capacitor C 602 and C603 and resistance R 604 interconnects and constitutes; Said pulse shaper is connected and composed by the Schmidt trigger U601-U603 that possesses waveform shaping and signal logic disposal ability, mosfet driver U604-U605, two N and P channel-type switch mosfet U606 and the peripheral circuit be made up of resistance, electric capacity and voltage-stabiliser tube.
7. the high power module high frequency driver that possesses the leading mechanism of non-nerve according to claim 1; It is characterized in that: said power amplifier module one is consistent with power amplifier module two internal structures, connects and composes with reverse resistance R 801-R802, triode Q801-Q804 and the diode D801-D802 that turn-offs waveform and export negative voltage when the no control signal input by being used for producing the forward drive waveform according to control signal.
8. the high power module high frequency driver that possesses the leading mechanism of non-nerve according to claim 1, it is characterized in that: said Signal interface module one is consistent with the internal structure of Signal interface module two.
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| CN105915204A (en) * | 2016-06-17 | 2016-08-31 | 南京邮电大学 | Soft starting circuit for output signal of digital signal source chip |
| CN107947771A (en) * | 2017-12-08 | 2018-04-20 | 宁波拓邦智能控制有限公司 | A kind of IGBT protection circuit |
| CN108170048A (en) * | 2017-12-19 | 2018-06-15 | 嘉兴市恒创电力设备有限公司 | Intelligent switch and intelligent control method |
| CN109212433A (en) * | 2018-10-18 | 2019-01-15 | 中国科学院电工研究所 | A kind of inverter IGBT fault pre-alarming and protection circuit |
| CN109450230A (en) * | 2018-10-24 | 2019-03-08 | 南京轨道交通系统工程有限公司 | A kind of IGBT gate drivers based on analog circuit |
| CN110007132A (en) * | 2019-05-08 | 2019-07-12 | 南京芯耐特半导体有限公司 | A kind of low pressure zero-power CMOS power on detection circuit |
| CN111162758A (en) * | 2020-01-10 | 2020-05-15 | 荣湃半导体（上海）有限公司 | Low-jitter filter |
| CN112653425A (en) * | 2020-11-27 | 2021-04-13 | 凯迈（洛阳）测控有限公司 | Universal analog conditioning module |
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| CN112653425A (en) * | 2020-11-27 | 2021-04-13 | 凯迈（洛阳）测控有限公司 | Universal analog conditioning module |
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