CN102503377B - High-strength semiconductor packaging ceramic material and manufacturing method thereof - Google Patents
High-strength semiconductor packaging ceramic material and manufacturing method thereof Download PDFInfo
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- CN102503377B CN102503377B CN 201110296847 CN201110296847A CN102503377B CN 102503377 B CN102503377 B CN 102503377B CN 201110296847 CN201110296847 CN 201110296847 CN 201110296847 A CN201110296847 A CN 201110296847A CN 102503377 B CN102503377 B CN 102503377B
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Abstract
The invention discloses a high-strength semiconductor packaging ceramic material and a manufacturing method thereof, which relate to the field of manufacturing of high-reliability multilayer ceramic packaging shells. Raw materials include, by weight, 15%-25% of glass powder, 5%-15% of colorant, and the balance of aluminum oxide powder. The preparation method includes: firstly, making the raw materials into powder from 0.5 micrometer to 0.7 micrometer in size and mixing the powder uniformly; secondly, moulding; and thirdly, sintering in an atmosphere accordant to N2:H2=1:1-3 at the temperature ranging from 1200 DEG C to 1300 DEG C after moulding, wherein the proportion of the nitrogen to the hydrogen is volume ratio. The ceramic material is high in mechanical strength and low in sintering temperature, can be used as a conductor material matched with copper-tungsten, and conductivity of the conductor material can be improved greatly.
Description
Technical field
The present invention relates to the ceramic material field, especially highly reliable multilayer ceramic package casing is made the field.
Background technology
In recent years, under the drive of semiconductor technology develop rapidly, electronic devices and components constantly develop to miniaturization, integrated and high frequency direction.
The sintering temperature of conventional alumina-ceramic is more than 1500 ℃, calcination equipment there is higher requirement, need the high-temperature hydrogen sintering oven, consumption to the energy is also quite big, as electric power, hydrogen etc., so manufacturing cost is high always, and higher sintering temperature has also limited its metal such as W, Mo that can only adopt infusibility as conductor material.The metallization resistance of W, Mo material is big, and the conductor losses height can not satisfy the application in high speed, high frequency field fully.The LTCC(low-temperature co-burning ceramic material) though can use low resistance conductors such as gold and silver, copper, adds a large amount of glass ingredients in order to reduce sintering temperature, thereby caused the not enough 200Mpa of its bending strength.The reduction of bending strength has caused the decline of its reliability, is prone to crackle or ruptures under bigger slightly impact, causes product serious failure phenomenon to occur.The bending strength that LTCC is low has also limited the thickness of base plate for packaging in addition, is unfavorable for the application of ultra-thin packing forms, thereby has limited the further miniaturization of encapsulation.
At present domestic do not have production of units can mate the low resistance conductor material, keeps the ceramic packaging material than high-mechanical property simultaneously again.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of making method of high strength semiconductor packages stupalith, low, the good mechanical property of made ceramic packaging material power consumption of the present invention, and can mate the low resistance conductor material.
The technical solution used in the present invention is: a kind of high strength semiconductor packages stupalith, and raw material is made up of following material by mass percentage: glass powder 15%～25% tinting material 5%～15% surplus is alumina powder; The content of alumina powder is not less than 70% in the raw material; Tinting material is by TiO
2And Cr
2O
3Form.
The preparation method is: (1) is made 0.5～0.7 micron powdery with each component in the raw material and is mixed; (2) moulding; (3) after the moulding at N
2: H
2Carry out sintering in=1:1～3 atmosphere, sintering temperature is 1200～1300 ℃, and the ratio of nitrogen and hydrogen is volume ratio.
Preferred alumina powder is the α phase, and purity is greater than 99.9%, and powder granularity is less than 1 μ m, and specific surface area is 3～10m
2/ g.
The mass ratio of each material is in the glass powder: Li
2O:SiO
2: MgO:MnO
2: Y
2O
3=0.5～1.5:2～6:1～3:1～4:0.5～1.5.
The mass ratio of each material is in the preferred glass powder: Li
2O:SiO
2: MgO:MnO
2: Y
2O
3=1:4:2:3:1.
The mass ratio of each material is in the tinting material: TiO
2: Cr
2O
3=0.5～1.5:0.5～1.5.
The mass ratio of each material is in the preferred tinting material: TiO
2: Cr
2O
3=1:1.
The mass ratio of glass powder and tinting material is 2:1 in the preferred raw material.
The mass ratio of glass powder and tinting material is 3:1 in the preferred raw material.
The mass ratio of glass powder and tinting material is 1:1 in the preferred raw material.
The beneficial effect that adopts technique scheme to produce is:
The more traditional alumina-ceramic packaged material sintering temperature of stupalith of the present invention has reduced by 300～400 ℃, therefore can reduce a large amount of moving combustion expenses, save cost.
Stupalith of the present invention is because the sintering temperature reduction, so can use copper-tungsten as supporting conductor material, its specific conductivity improves greatly, the electrical property that the envelope that is made into is changeed shell is beneficial, reduced an insertion loss (key parameter in the encapsulation of microwave class, more low more good), improved frequency of utilization.
Stupalith mechanical property of the present invention is better than the LTCC material, therefore when substituting LTCC can product do littler, thinner, the size that reduces to encapsulate, thus in system integrated more device.
The shell that uses this material to make can be used for the encapsulation of big microwave high power device and circuit and mcm (MCM), as the important interface that is connected chip and system, be not only the important component part of device and circuit, and be the important foundation that guarantees that the semiconducter device engineering is used.
Embodiment
Embodiment 1:
Raw material is made up of following material by mass percentage: glass powder 20% tinting material 10% alumina powder 70%.
Alumina powder is the α phase, and purity is greater than 99.9%, and powder granularity is less than 1 μ m, and specific surface area is 3～10m
2/ g.
The mass ratio of each material is in the glass powder: Li
2O:SiO
2: MgO:MnO
2: Y
2O
3=1:4:2:3:1.
The mass ratio of each material is in the tinting material: TiO
2: Cr
2O
3=1:1.
The preparation method is: (1) is made 0.5 micron powdery with each component in the raw material and is mixed; (2) moulding; (3) after the moulding at N
2: H
2Carry out sintering in the=1:1 atmosphere, sintering temperature is 1250 ℃.
The key technical indexes of made high strength semiconductor packages stupalith is as follows:
Bending strength〉300MPa
Specific inductivity＜9.5(1MHz)
<?9（10GHz）
Dielectric loss＜10 * 10
-4(1MHz)
<?20×10
-4（10GHz）
Become the porcelain color: black
Embodiment 2:
Raw material is made up of following material by mass percentage: glass powder 15% tinting material 5% alumina powder 80%.
Alumina powder is the α phase, and purity is greater than 99.9%, and powder granularity is less than 1 μ m, and specific surface area is 3～10m
2/ g.
The mass ratio of each material is in the glass powder: Li
2O:SiO
2: MgO:MnO
2: Y
2O
3=1:4:2:3:1.
The mass ratio of each material is in the tinting material: TiO
2: Cr
2O
3=1:1.
The preparation method is: (1) is made 0.7 micron powdery with each component in the raw material and is mixed; (2) moulding; (3) after the moulding at N
2: H
2Carry out sintering in the=1:3 atmosphere, sintering temperature is 1300 ℃.
The key technical indexes of made high strength semiconductor packages stupalith is as follows:
Bending strength〉300MPa
Specific inductivity＜9.5(1MHz)
<?9（10GHz）
Dielectric loss＜10 * 10
-4(1MHz)
<?20×10
-4（10GHz）
Become the porcelain color: black
Embodiment 3:
Raw material is made up of following material by mass percentage: glass powder 15% tinting material 15% alumina powder 70%.
Alumina powder is the α phase, and purity is greater than 99.9%, and powder granularity is less than 1 μ m, and specific surface area is 3～10m
2/ g.
The mass ratio of each material is in the glass powder: Li
2O:SiO
2: MgO:MnO
2: Y
2O
3=1:4:2:3:1.
The mass ratio of each material is in the tinting material: TiO
2: Cr
2O
3=1:1.
The preparation method is: (1) is made 0.6 micron powdery with each component in the raw material and is mixed; (2) moulding; (3) after the moulding at N
2: H
2Carry out sintering in the=1:2 atmosphere, sintering temperature is 1200 ℃.
The key technical indexes of made high strength semiconductor packages stupalith is as follows:
Bending strength〉300MPa
Specific inductivity＜9.5(1MHz)
<?9（10GHz）
Dielectric loss＜10 * 10
-4(1MHz)
<?20×10
-4（10GHz）
Become the porcelain color: black
Embodiment 4:
Raw material is made up of following material by mass percentage: glass powder 25% tinting material 5% alumina powder 70%.
Alumina powder is the α phase, and purity is greater than 99.9%, and powder granularity is less than 1 μ m, and specific surface area is 3～10m
2/ g.
The mass ratio of each material is in the glass powder: Li
2O:SiO
2: MgO:MnO
2: Y
2O
3=1:4:2:3:1.
The mass ratio of each material is in the tinting material: TiO
2: Cr
2O
3=1:1.
The preparation method is: (1) is made 0.6 micron powdery with each component in the raw material and is mixed; (2) moulding; (3) after the moulding at N
2: H
2Carry out sintering in the=1:3 atmosphere, sintering temperature is 1230 ℃.
The key technical indexes of made high strength semiconductor packages stupalith is as follows:
Bending strength〉300MPa
Specific inductivity＜9.5(1MHz)
<?9（10GHz）
Dielectric loss＜10 * 10
-4(1MHz)
<?20×10
-4（10GHz）
Become the porcelain color: black
Embodiment 5:
Raw material is made up of following material by mass percentage: glass powder 18% tinting material 10% alumina powder 72%.
Alumina powder is the α phase, and purity is greater than 99.9%, and powder granularity is less than 1 μ m, and specific surface area is 3～10m
2/ g.
The mass ratio of each material is in the glass powder: Li
2O:SiO
2: MgO:MnO
2: Y
2O
3=1:4:2:3:1.
The mass ratio of each material is in the tinting material: TiO
2: Cr
2O
3=1:1.
The preparation method is: (1) is made 0.7 micron powdery with each component in the raw material and is mixed; (2) moulding; (3) after the moulding at N
2: H
2Carry out sintering in the=1:2 atmosphere, sintering temperature is 1250 ℃.
The key technical indexes of made high strength semiconductor packages stupalith is as follows:
Bending strength〉300MPa
Specific inductivity＜9.5(1MHz)
<?9（10GHz）
Dielectric loss＜10 * 10
-4(1MHz)
<?20×10
-4（10GHz）
Become the porcelain color: black
Embodiment 6:
Raw material is made up of following material by mass percentage: glass powder 25% tinting material 5% alumina powder 70%.
Alumina powder is the α phase, and purity is greater than 99.9%, and powder granularity is less than 1 μ m, and specific surface area is 3～10m
2/ g.
The mass ratio of each material is in the glass powder: Li
2O:SiO
2: MgO:MnO
2: Y
2O
3=0.5:6:3:1:1.5.
The mass ratio of each material is in the tinting material: TiO
2: Cr
2O
3=0.5:1.5.
The preparation method is: (1) is made 0.6 micron powdery with each component in the raw material and is mixed; (2) moulding; (3) after the moulding at N
2: H
2Carry out sintering in the=1:3 atmosphere, sintering temperature is 1250 ℃.
The key technical indexes of made high strength semiconductor packages stupalith is as follows:
Bending strength〉300MPa
Specific inductivity＜9.5(1MHz)
<?9（10GHz）
Dielectric loss＜10 * 10
-4(1MHz)
<?20×10
-4（10GHz）
Become the porcelain color: black.
Claims (8)
1. high strength semiconductor packages stupalith, it is characterized in that: raw material is made up of following material by mass percentage: glass powder 15%～25% tinting material 5%～15% surplus is alumina powder; The content of alumina powder is not less than 70% in the raw material; Tinting material is by TiO
2And Cr
2O
3Form; Described alumina powder is the α phase, and purity is greater than 99.9%, and powder granularity is less than 1 μ m, and specific surface area is 3～10m
2/ g; The mass ratio of each material is in the glass powder: Li
2O:SiO
2: MgO:MnO
2: Y
2O
3=0.5～1.5:2～6:1～3:1～4:0.5～1.5.
2. a kind of high strength semiconductor packages stupalith as claimed in claim 1 is characterized in that the mass ratio of each material is in the glass powder: Li
2O:SiO
2: MgO:MnO
2: Y
2O
3=1:4:2:3:1.
3. a kind of high strength semiconductor packages stupalith as claimed in claim 1 is characterized in that the mass ratio of each material is in the tinting material: TiO
2: Cr
2O
3=0.5～1.5:0.5～1.5.
4. as claim 1 or 3 described a kind of high strength semiconductor packages stupaliths, it is characterized in that the mass ratio of each material is in the tinting material: TiO
2: Cr
2O
3=1:1.
5. a kind of high strength semiconductor packages stupalith as claimed in claim 1 is characterized in that the mass ratio of glass powder and tinting material is 2:1 in the raw material.
6. a kind of high strength semiconductor packages stupalith as claimed in claim 1 is characterized in that the mass ratio of glass powder and tinting material is 3:1 in the raw material.
7. a kind of high strength semiconductor packages stupalith as claimed in claim 1 is characterized in that the mass ratio of glass powder and tinting material is 1:1 in the raw material.
8. the preparation method of the described a kind of high strength semiconductor packages stupalith of claim 1, may further comprise the steps: (1) is made 0.5～0.7 micron powdery with each component in the raw material and is mixed; (2) moulding; (3) ratio at nitrogen and hydrogen is to carry out sintering in 1:1～3 atmosphere after the moulding, and sintering temperature is 1200～1300 ℃, and the ratio of described nitrogen and hydrogen is volume ratio.
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|---|---|---|---|
| CN 201110296847 CN102503377B (en) | 2011-09-30 | 2011-09-30 | High-strength semiconductor packaging ceramic material and manufacturing method thereof |
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| CN102503377A CN102503377A (en) | 2012-06-20 |
| CN102503377B true CN102503377B (en) | 2013-07-17 |
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| CN105777080A (en) * | 2016-02-23 | 2016-07-20 | 潮州三环（集团）股份有限公司 | High-strength ceramic packaging base material and preparing method thereof |
| CN106810214B (en) * | 2017-01-05 | 2019-09-20 | 中北大学 | A kind of preparation method of high strength and low cost alumina ceramic substrate used for electronic packaging |
| CN110423102A (en) * | 2019-08-06 | 2019-11-08 | 浙江长兴电子厂有限公司 | A kind of ceramic package sheathing material suitable for low resistance lead |
| CN112390630A (en) * | 2020-12-23 | 2021-02-23 | 湖州聚合环保科技有限公司 | Low-shrinkage ceramic packaging shell material |
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| CN100425573C (en) * | 2004-02-27 | 2008-10-15 | 申佑芝 | Mfg. method of nano ceramics |
| CN101182193B (en) * | 2007-11-27 | 2010-06-02 | 清华大学 | Method for preparing in-situ self-toughening alumina ceramics |
| CN101565302B (en) * | 2009-04-09 | 2012-12-26 | 潮州三环（集团）股份有限公司 | Ceramic packaging material for LED and production method thereof |
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