CN106810078B - A kind of devitrified glass series microwave dielectric material of sintered at ultra low temperature and preparation method thereof - Google Patents
A kind of devitrified glass series microwave dielectric material of sintered at ultra low temperature and preparation method thereof Download PDFInfo
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Abstract
The present invention relates to devitrified glass series microwave dielectric materials of a kind of sintered at ultra low temperature and preparation method thereof, and the devitrified glass series microwave dielectric material is by CuO-B2O3‑Li2O ternary oxide is sintered, and wherein CuO content is 15~35wt%, B2O3Content is 45~65wt%, Li2O content is 5~30wt%；The devitrified glass series microwave dielectric material includes principal crystalline phase CuB2O4.Raw material of the present invention be electronic ceramics preparation in it is common, only there are three types of: CuO, B2O3(or H3BO3) and Li2CO3, and preparation process is simple, at low cost, practicability with higher.
Description
Technical field
The present invention relates to devitrified glass series microwave dielectric materials of a kind of sintered at ultra low temperature and preparation method thereof, belong to electronics
Encapsulating material field.
Background technique
Low-temperature co-fired ceramics (Low temperature co-fired ceramics, LTCC) can be with high conductivity
Metal (such as gold, silver, copper etc.) integrated cofiring at 850-950 DEG C, have dielectric properties it is adjustable, with similar in silicon chip material
The many merits such as thermal expansion coefficient, high chemical stability and good mechanical performance, wireless telecommunications, aerospace,
Biological medicine and energy technology field have had been widely used.When as high-frequency electronic package substrate materials'use, LTCC
Material must have lower relative dielectric constant (< 10) to reduce the delay of signal, while have low dielectric loss to guarantee
Signal transmission quality, in addition, must also can be with silver or the metals such as copper in 950 DEG C or less matching co-firings.In recent years, with highly dense
The fast development of degree, integrated Electronic Packaging, research and development can be compatible with semiconductor, even organic material technological temperature
LTCC material becomes one of the new direction of LTCC technology development.One kind being referred to as ultralow temperature common burning porcelain (Ultra-low
Temperature co-fired ceramics, ULTCC) material become LTCC technology research field hot spot.
In order to metallic aluminium (660 DEG C of fusing point) electrode material cofiring with low melting point, the sintering temperature one of ULTCC material
As must be at 650 DEG C or less.Currently, the low-k ULTCC material in existing literature report is mostly with molybdate, vanadate, tellurium
Based on the ceramic material with intrinsic sintering temperature and low such as hydrochlorate (Int.Mater.Rev.2015,60,392), in recent years
In patent application, also have correlation be related to sintered at ultra low temperature microwave dielectric ceramic materials and its preparation (number of patent application:
201510259606.1 201410825333.8,201310458359.9,201310141266.3,201010192027.7),
But above-mentioned material system has that material toxicity, sintering process are sensitive and chemical reaction etc. occurs with silver or aluminium.
Some devitrified glasses with low crystallization temperature are considered as being hopeful practical ULTCC material system.For example,
The ZnO-B of Yu et al. report2O3Devitrified glass system (J.Am.Ceram.Soc., 2014,97,704), can analyse at 650 DEG C
Low-k and low-loss Zn are provided3B2O6With Zn (BO2)2Phase, and can be with silver electrode material matching co-firing.With ZnO-
B2O3Binary system is similar, CuO-B2O3There are CuB in binary oxide system2O4And Cu3B2O6Two kinds of principal crystalline phases, wherein CuB2O4
Monocrystalline has been demonstrated there is lower dielectric constant (~6) and dielectric loss (≤10-3)(Phys.Rev.B,2007,76,
144401；Phys.Rev.B, 2013,88,024301), illustrate CuB2O4It is likely to become a kind of new microwave dielectric material.Separately
On the one hand, since low-k devitrified glass system LTCC material is by using Ferro A6 as offshore company's product ridge of representative
Disconnected, while in view of the broad prospect of application of ULTCC material, research and development low cost, performance is stablized, and can with silver, especially with
More cheap aluminium electrode realize the low-k ULTCC material of ultralow temperature matching co-firing to the development of domestic LTCC technology and
Using being of great significance.
Summary of the invention
In view of the above-mentioned problems, the purpose of the present invention is to provide a kind of low cost, performance is stablized, and can be with silver, especially
The low-k ULTCC material of ultralow temperature matching co-firing is realized with more cheap aluminium electrode.
On the one hand, the present invention provides a kind of devitrified glass series microwave dielectric material of sintered at ultra low temperature, the crystallite glass
Glass series microwave dielectric material is by CuO-B2O3-Li2O ternary oxide is sintered, and wherein CuO content is 15~35wt%,
B2O3Content is 45~65wt%, Li2O content is 5~30wt%.
Inventor has found CuO-B2O3-Li2There are large range of glass phases in O ternary oxide system, and certain
In compositing range, CuB can be precipitated at a lower temperature2O4Crystal phase.Controlling CuO content to the invention people is 15~35wt%,
B2O3Content is 45~65wt%, Li2O content is 5~30wt%, and a kind of low sintering devitrified glass system microwave is prepared
Dielectric material.In addition CuO-B2O3Binary system can not prepare glass phase, Li2O is glass network dressing agent, effect master
If promoting the formation of glass phase, reduction glass transition temperature, and CuO-B2O3Binary system can not prepare glass phase.
Li2O content value, which determines, is formed by object phase, in the present invention Li2Under the content of O, available CuB2O4The crystallite glass of phase
Glass, and other Li2CuB may be deviateed under O content value2O4Phase forming region, and the microwave of the second phase material rich in Li is situated between
Whether electrical property is unclear can satisfy requirement.
Preferably, relative dielectric constant of the devitrified glass series microwave dielectric material at 13GHz be 5.6~5.9,
Low-loss under 13GHz is 0.001~0.005.
On the other hand, the present invention also provides a kind of preparation sides of the devitrified glass series microwave dielectric material of sintered at ultra low temperature
Method, comprising:
The source Cu, the source B and the source Li are mixed, after keeping the temperature 1~2 hour at 950~1100 DEG C, the glass metal that is melted；
The glass metal that gained melts is poured into deionized water, glass crushed aggregate is obtained；
Base after gained glass crushed aggregate ball milling is obtained into institute in 600~650 DEG C of 15~furnace coolings after sixty minutes of sintering
State devitrified glass series microwave dielectric material.
Preferably, the source Cu is CuO.
Preferably, the source B is B2O3And/or H3BO3。
Preferably, the source Li is Li2O and/or Li2CO3。
Preferably, being warming up to 950~1100 DEG C with 5~10 DEG C/min.
In another aspect, the present invention also provides a kind of devitrified glass series microwave dielectric material by above-mentioned sintered at ultra low temperature with
Metal electrode cofiring and the cofiring body of devitrified glass series microwave dielectric material and metal electrode prepared.
Preferably, the metal electrode is Ag or Al.
Fourth aspect, the present invention also provides the cofirings of a kind of above-mentioned devitrified glass series microwave dielectric material and metal electrode
The preparation method of body, comprising:
The source Cu, the source B and the source Li are mixed, after keeping the temperature 1~2 hour at 950~1100 DEG C, the glass metal that is melted；
The glass metal that gained melts is poured into deionized water, glass crushed aggregate is obtained；
Metal electrode powder is added in gained glass crushed aggregate, base after ball milling is sintered 15~60 points at 600~650 DEG C
Furnace cooling after clock obtains the cofiring body of the devitrified glass series microwave dielectric material and metal electrode.
The micro- of the low-k of sintered at ultra low temperature devitrified glass system can successfully be prepared using technical solution of the present invention
Wave dielectric material.XRD analysis shows to can get under 600~650 DEG C of sintering temperatures with CuB2O4For the devitrified glass material of principal crystalline phase
Material；EDS analysis shows, the material obtained by preferred embodiment can realize matching co-firing with silver electrode, be a kind of ideal be suitble to
In the material of LTCC package substrate application.The devitrified glass series microwave dielectric material of the sintered at ultra low temperature obtained through the invention has
There is the practical value of large-scale production.
The invention has the characteristics that and advantage:
1, raw material of the present invention be electronic ceramics preparation in it is common, only there are three types of: CuO, B2O3(or H3BO3)
And Li2CO3, and preparation process is simple, at low cost, practicability with higher；
2, the ultralow temperature cofiring material prepared by the present invention has low-k (5.6~5.9@13GHz) and low-loss
(0.001~0.005@13GHz), while matching co-firing can be realized with silver or aluminium electrode, low-temperature co-fired ceramics encapsulation base can be met
The application requirement of plate material and MEMS and semiconductor technology compatibility.
Detailed description of the invention
Fig. 1 is XRD spectrum of the CBL devitrified glass of preferred embodiment under different sintering temperatures；
Fig. 2 is that the XRD and EDS of CBL devitrified glass and silver and aluminium electrode after 625 DEG C of -30min cofirings analyze photo.
Specific embodiment
The present invention is further illustrated below by way of following embodiments, it should be appreciated that following embodiments are merely to illustrate this
Invention, is not intended to limit the present invention.
The component of the devitrified glass series microwave dielectric material of sintered at ultra low temperature provided by the invention is by CuO-B2O3-Li2O tri-
First oxide is constituted, and CuO content is 30~35wt%, B2O3Content is 60~65wt%, Li2O content is 5wt%~10wt%.
The present invention is based on CuO-B2O3-Li2The sintered at ultra low temperature devitrified glass series microwave dielectric material of O ternary oxide system, passes through
The constituent content and sintering schedule of optimization can get with CuB2O4For the ULTCC material of principal crystalline phase, have after material system optimization
Low relative dielectric constant (5.6~5.9@13GHz) and low-loss (0.001~0.005@13GHz), and can be with silver or aluminium electrode
Matching co-firing.
CuO-B2O3-Li2The microcrystal glass material of O ternary oxide system, wherein CuO content is 30~35wt%, B2O3
Content is 60~65wt%, Li2O content is 5~10wt%.Less than 5wt%, it is possible to glass phase can not be obtained, be more than
After 30wt%, CuB is deviated from2O4Principal crystalline phase forming region is not just CuB substantially2O4Principal crystalline phase, and other richness Li phases
Material be possible to do not have microwave dielectric property.As preferred: to obtain CuB2O4The sintered at ultra low temperature devitrified glass of principal crystalline phase
Series microwave dielectric material, above-mentioned CuO-B2O3-L2The low-temperature co-burning ceramic material of O ternary oxide system, can be by following quality
Percentage composition: 32wt%CuO -63wt%B2O3- 5wt%Li2O is abbreviated as CBL.
The devitrified glass series microwave dielectric material of sintered at ultra low temperature prepared by the present invention is devitrified glass system, most important
Be sintering temperature can at 650 DEG C hereinafter, can not only with silver metal electrodes cofiring, but also can with silver-colored (961 DEG C of fusing point) with
Outer aluminum metal electrode (660 DEG C of fusing point) cofiring, this belongs to ultralow temperature cofiring material (Ultra-low temperature co-
Fired ceramics, ULTCC ,≤700 DEG C).Illustrate to following exemplary the crystallite glass of sintered at ultra low temperature provided by the invention
Glass series microwave dielectric material.
The source Cu, the source B and the source Li are mixed, keeping the temperature 1~2 hour at 950~1100 DEG C makes raw material (source Cu, the source B and Li
Source) it all melts, the glass metal melted, it then directly pours into deionized water by water quenching, obtains glass crushed aggregate.Institute
Stating the source Cu can be CuO.The source B can be B2O3And/or H3BO3.The source Li can be Li2O and/or Li2CO3.Show as one
Example, by CuO, B2O3(or H3BO3) and Li2CO3It weighs Deng three kinds of oxide raw materials according to the composition and ratio of microcrystal glass material, mixes
After closing uniformly, it is put into furnace and 950~1100 DEG C of heat preservations 1~2 hour is risen to 5~10 DEG C/min, then will be melted using water quenching
The glass metal melted, which pours into, obtains glass crushed aggregate in deionized water.
Above-mentioned glass crushed aggregate, abrading-ball and dehydrated alcohol are put into togerther in ball grinder according to certain mass percent,
It ball milling 12~24 hours, is dried by 100 DEG C, sieving obtains glass fine powder.
Above-mentioned glass fine powder is pressed into the biscuit (cylindric) of certain size, is put into furnace and keeps the temperature 15 in 600~650 DEG C
~60 minutes be sintered, after with furnace natural cooling, the devitrified glass series microwave dielectric material can be obtained.The crystallite glass
Glass series microwave dielectric material can be sintered within the temperature range of 600~650 DEG C (preferably 625 DEG C), and be precipitated with CuB2O4Based on
Crystal phase.
After above-mentioned glass fine powder and metal electrode powder (such as Ag powder, Al powder etc.) are mixed, it is pressed into certain size
Cylindric biscuit, be put into furnace in 600~650 DEG C keep the temperature 15~60 minutes be sintered, after with furnace natural cooling, can be obtained ultralow
The devitrified glass series microwave dielectric material of temperature sintering and the cofiring body of Ag or Al.Or Ag directly is added in gained glass crushed aggregate
Powder or Al powder, base obtains the cofiring body in 600~650 DEG C of 15~furnace coolings after sixty minutes of sintering after ball milling.Only
In order to verify whether Ag powder or Al powder and glass-ceramic matrix have reaction, therefore the metal-powders such as Ag powder or Al powder in cofiring
Partial size can be but be not limited only to 10~20 μm.The mass fraction of Ag or Al can be 10~20wt% in the cofiring body.It is described
Devitrified glass series microwave dielectric material can be matched within the temperature range of 600~650 DEG C with silver or the metal electrode materials such as aluminium
Cofiring.
Compared with existing microwave dielectric ceramic materials, the present invention, and can be lower using devitrified glass system
It is obtained by glass phase crystallization there is low relative dielectric constant (5.6~5.9@13GHz) and low for (≤650 DEG C) under sintering temperature
The microwave dielectric material of dielectric loss (0.001~0.005@13GHz), component and preparation process are simple, and preferred embodiment
It can be realized with metal electrode materials such as silver or aluminium in 650 DEG C of ultralow temperature cofirings below.Using prepared by the present invention program
Low-k devitrified glass series microwave dielectric material can be used as novel high-frequency electronic package substrate materials'use.
Enumerate embodiment further below with the present invention will be described in detail.It will similarly be understood that following embodiment is served only for this
Invention is further described, and should not be understood as limiting the scope of the invention, those skilled in the art is according to this hair
Some nonessential modifications and adaptations that bright above content is made all belong to the scope of protection of the present invention.Following examples are specific
Technological parameter etc. is also only an example in OK range, i.e. those skilled in the art can be done properly by the explanation of this paper
In the range of select, and do not really want to be defined in hereafter exemplary specific value.
Embodiment 1:
By CuO, H3BO3And Li2CO3Three kinds of oxide raw materials are according to 32wt%CuO -63wt%B2O3- 5wt%Li2The matter of O
Amount percentage composition weighs, and after mixing, is put into furnace and rises to 1050 DEG C of heat preservations 1 hour with 5 DEG C/min, then use water quenching
The glass metal of melting is poured into and obtains glass crushed aggregate in deionized water by method.Then, glass crushed aggregate, abrading-ball and dehydrated alcohol will be obtained
It is put into togerther in ball grinder according to the mass percent of 1:2:0.8, ball milling 12 hours, is dried by 100 DEG C, sieving obtains CBL
Glass fine powder.Above-mentioned glass fine powder is pressed into the cylindric biscuit of φ 13mm × 7mm, is put into rising to 2 DEG C/min in furnace
625 DEG C heat preservation 30 minutes be sintered, after with furnace natural cooling.Utilize the cylindrical dielectric in Network Analyzer (Agilent E8363A)
Resonator method tests its microwave dielectric property.Test result show the CBL devitrified glass that embodiment is prepared
Relative dielectric constant ε r=5.84, Q × f=10120, τ under 13.44GHzf=-33ppm/ DEG C.
Embodiment 2:
By CBL glass fine powder obtained in previous embodiment 1 and silver-colored (Ag) metal-powder according to 80wt%CBL -20wt%
The mass percent of Ag weighs, and powder, abrading-ball and dehydrated alcohol are then put into togerther ball according to the mass percent of 1:2:0.8
In grinding jar, ball milling 6 hours, dried by 100 DEG C, sieving, compression molding is put into furnace and rises to 625 DEG C of heat preservations with 2 DEG C/min
30 minutes be sintered, after with furnace natural cooling.Using the co-fire match of XRD, SEM and EDS analysis CBL and silver.Fig. 2 is that CBL is micro-
The XRD and EDS of crystal glass and silver electrode after 625 DEG C of -30min cofirings analyze photo.
Embodiment 3:
By glass fine powder obtained in previous embodiment 1 and aluminium (Al) metal-powder according to 80wt%CBL -20wt%Al's
Mass percent weighs, and then puts the powder mixed, abrading-ball and dehydrated alcohol together according to the mass percent of 1:2:0.8
Enter in ball grinder, ball milling 6 hours, dried by 100 DEG C, sieving, compression molding is put into furnace and rises to 625 DEG C with 2 DEG C/min
Keep the temperature 30 minutes be sintered, after with furnace natural cooling.Using the co-fire match of XRD, SEM and EDS analysis CBL and silver.Fig. 2 is
The XRD and EDS of CBL devitrified glass and aluminium electrode after 625 DEG C of -30min cofirings analyze photo.
Embodiment 4:
By CuO, H3BO3And Li2CO3Three kinds of oxide raw materials are according to 32wt%CuO -63wt%B2O3- 5wt%Li2The matter of O
Amount percentage composition weighs, and after mixing, is put into furnace and rises to 1050 DEG C of heat preservations 1 hour with 5 DEG C/min, then use water quenching
The glass metal of melting is poured into and obtains glass crushed aggregate in deionized water by method.Then, glass crushed aggregate, abrading-ball and dehydrated alcohol will be obtained
It is put into togerther in ball grinder according to the mass percent of 1:2:0.8, ball milling 12 hours, is dried by 100 DEG C, sieving obtains CBL
Glass fine powder.Above-mentioned glass fine powder is pressed into the cylindric biscuit of φ 13mm × 7mm, is put into rising to 2 DEG C/min in furnace
650 DEG C heat preservation 30 minutes be sintered, after with furnace natural cooling.Utilize the cylindrical dielectric in Network Analyzer (Agilent E8363A)
Resonator method tests its microwave dielectric property.Test result show the CBL devitrified glass that embodiment is prepared
Relative dielectric constant ε r=5.81, Q × f=9897, τ under 13.51GHzf=-31ppm/ DEG C.
Embodiment 5:
By CuO, H3BO3And Li2CO3Three kinds of oxide raw materials are according to 32wt%CuO -63wt%B2O3- 5wt%Li2The matter of O
Amount percentage composition weighs, and after mixing, is put into furnace and rises to 1050 DEG C of heat preservations 1 hour with 5 DEG C/min, then use water quenching
The glass metal of melting is poured into and obtains glass crushed aggregate in deionized water by method.Then, glass crushed aggregate, abrading-ball and dehydrated alcohol will be obtained
It is put into togerther in ball grinder according to the mass percent of 1:2:0.8, ball milling 12 hours, is dried by 100 DEG C, sieving obtains CBL
Glass fine powder.Above-mentioned glass fine powder is pressed into the cylindric biscuit of φ 13mm × 7mm, is put into rising to 2 DEG C/min in furnace
600 DEG C heat preservation 30 minutes be sintered, after with furnace natural cooling.Utilize the cylindrical dielectric in Network Analyzer (Agilent E8363A)
Resonator method tests its microwave dielectric property.Test result show the CBL devitrified glass that embodiment is prepared
Relative dielectric constant ε r=5.75, Q × f=8053, τ under 13.29GHzf=-38ppm/ DEG C.
Embodiment 6:
By CuO, H3BO3And Li2CO3Three kinds of oxide raw materials are according to 32wt%CuO -63wt%B2O3- 5wt%Li2The matter of O
Amount percentage composition weighs, and after mixing, is put into furnace and rises to 1050 DEG C of heat preservations 1 hour with 5 DEG C/min, then use water quenching
The glass metal of melting is poured into and obtains glass crushed aggregate in deionized water by method.Then, glass crushed aggregate, abrading-ball and dehydrated alcohol will be obtained
It is put into togerther in ball grinder according to the mass percent of 1:2:0.8, ball milling 12 hours, is dried by 100 DEG C, sieving obtains CBL
Glass fine powder.Above-mentioned glass fine powder is pressed into the cylindric biscuit of φ 13mm × 7mm, is put into rising to 2 DEG C/min in furnace
575 DEG C heat preservation 30 minutes be sintered, after with furnace natural cooling.Utilize the cylindrical dielectric in Network Analyzer (Agilent E8363A)
Resonator method tests its microwave dielectric property.Test result shows that the sample obtained under the sintering temperature can not measure its microwave
Dielectric properties, possible densified sintering product are relatively low.
Embodiment 7:
By CuO, H3BO3And Li2CO3Three kinds of oxide raw materials are according to 32wt%CuO -63wt%B2O3- 5wt%Li2The matter of O
Amount percentage composition weighs, and after mixing, is put into furnace and rises to 1050 DEG C of heat preservations 1 hour with 5 DEG C/min, then use water quenching
The glass metal of melting is poured into and obtains glass crushed aggregate in deionized water by method.Then, glass crushed aggregate, abrading-ball and dehydrated alcohol will be obtained
It is put into togerther in ball grinder according to the mass percent of 1:2:0.8, ball milling 12 hours, is dried by 100 DEG C, sieving obtains CBL
Glass fine powder.Above-mentioned glass fine powder is pressed into the cylindric biscuit of φ 13mm × 7mm, is put into rising to 2 DEG C/min in furnace
550 DEG C heat preservation 30 minutes be sintered, after with furnace natural cooling.Utilize the cylindrical dielectric in Network Analyzer (Agilent E8363A)
Resonator method tests its microwave dielectric property.Test result shows that the sample obtained under the sintering temperature can not measure its microwave
Dielectric properties, possible densified sintering product are relatively low.
Fig. 1 is XRD spectrum of the CBL devitrified glass under different sintering temperatures of preferred embodiment, as we know from the figure 550 DEG C when
Crystallization peak starts to occur, main phase CuB2O4；With the raising of sintering temperature, the enhancing of crystallization peak, while a small amount of second phase
Li4CuB2O6Start to occur at 625 DEG C；
Fig. 2 is XRD, the SEM of CBL devitrified glass prepared by embodiment 1 and silver and aluminium electrode after 625 DEG C of -30min cofirings
And EDS analyzes photo, wherein illustration (a) is that the SEM of CBL devitrified glass and silver electrode after 625 DEG C of -30min cofirings shines in Fig. 2
Piece, (b) are that SEM photograph, (c) of CBL devitrified glass and aluminium electrode after 625 DEG C of -30min cofirings are CBL devitrified glass and silver
EDS of the electrode after 625 DEG C of -30min cofirings analyzes result, (d) is that CBL devitrified glass and aluminium electrode are total in 625 DEG C of -30min
EDS analysis after burning as a result, for CBL devitrified glass with silver, after aluminium electrode cofiring, electrode particle is clear-cut as we know from the figure,
Not new mutually generation illustrates have between CBL devitrified glass and silver or aluminium electrode also there is no significantly chemically reacting
Preferable chemical compatibility is, it can be achieved that matching co-firing.
Claims (7)
1. a kind of devitrified glass series microwave dielectric material of sintered at ultra low temperature, which is characterized in that devitrified glass system microwave is situated between
Material is by CuO-B2O3-Li2O ternary oxide is sintered, and wherein CuO content is 15~35wt%, B2O3Content be 45~
65wt%, Li2O content is 5~30wt%；The devitrified glass series microwave dielectric material includes principal crystalline phase CuB2O4And Li4CuB2O6；
The preparation method of the devitrified glass series microwave dielectric material of the sintered at ultra low temperature includes:
The source Cu, the source B and the source Li are mixed, after keeping the temperature 1~2 hour at 950~1100 DEG C, the glass metal that is melted；
The glass metal that gained melts is poured into deionized water, glass crushed aggregate is obtained；
Base after gained glass crushed aggregate ball milling is obtained described micro- in 600~650 DEG C of 15~furnace coolings after sixty minutes of sintering
Crystal glass series microwave dielectric material；
The devitrified glass series microwave dielectric material is 5.6~5.9, at 13 GHz in the relative dielectric constant under 13 GHz
Low-loss is 0.001~0.005.
2. the devitrified glass series microwave dielectric material of sintered at ultra low temperature according to claim 1, which is characterized in that the Cu
Source is CuO.
3. the devitrified glass series microwave dielectric material of sintered at ultra low temperature according to claim 1, which is characterized in that the B
Source is B2O3And/or H3BO3。
4. the devitrified glass series microwave dielectric material of sintered at ultra low temperature according to claim 1, which is characterized in that the Li
Source is Li2O and/or Li2CO3。
5. the devitrified glass series microwave dielectric material of sintered at ultra low temperature described in any one of -4 according to claim 1, feature
It is, is warming up to 950~1100 DEG C with 5~10 DEG C/min.
6. a kind of devitrified glass series microwave dielectric material by sintered at ultra low temperature described in any one of claim 1-5 and metal electricity
Pole cofiring and the cofiring body of devitrified glass series microwave dielectric material and metal electrode prepared；The metal electrode is Ag or Al.
7. a kind of preparation method of the cofiring body of devitrified glass series microwave dielectric material as described in right wants 6 and metal electrode,
It is characterized in that, comprising:
The source Cu, the source B and the source Li are mixed, after keeping the temperature 1~2 hour at 950~1100 DEG C, the glass metal that is melted；
The glass metal that gained melts is poured into deionized water, glass crushed aggregate is obtained；
Metal electrode powder is added in gained glass crushed aggregate, base after ball milling, it is sintered 15 at 600~650 DEG C~after sixty minutes
Furnace cooling obtains the cofiring body of the devitrified glass series microwave dielectric material and metal electrode.
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Effective date of registration: 20200618 Address after: 322118 5th floor, No.42, Wansheng street, Hengdian Town, Dongyang City, Jinhua City, Zhejiang Province Patentee after: Zhejiang silicon ceramic technology Co., Ltd Address before: 200050 No. 1295 Dingxi Road, Shanghai, Changning District Patentee before: SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES |