CN102496657A - Method for improving abnormal crystalline silicon solar cell - Google Patents
Method for improving abnormal crystalline silicon solar cell Download PDFInfo
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- CN102496657A CN102496657A CN2011104446304A CN201110444630A CN102496657A CN 102496657 A CN102496657 A CN 102496657A CN 2011104446304 A CN2011104446304 A CN 2011104446304A CN 201110444630 A CN201110444630 A CN 201110444630A CN 102496657 A CN102496657 A CN 102496657A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The invention belongs to the technical fields of semiconductor crystalline silicon and solar cell manufacture, and discloses a method for improving an abnormal crystalline silicon solar cell. The method comprises the following steps of: impregnating the abnormal cell in a hydrofluoric (HF) acid at the mass concentration of 1 to 5 percent for 30 to 90 seconds, rinsing the abnormal cell by using de-ionized water, and blow-drying the abnormal cell by using nitrogen. By the method, sintering shortcomings can be effectively overcome, and the photoelectric conversion efficiency of a crystalline silicon solar cell can be improved by over 1 percent, so that the qualified rate of the cell is increased. The method is low in time consumption, high in processing efficiency and operability, low in cost and in no need of large-scale equipment.
Description
Technical field
The invention belongs to semiconductor crystal silicon and technical field of solar cell manufacturing, relate to a kind of method of improving unusual sheet in the crystal silicon solar batteries sheet, can improve the qualification rate and the electricity conversion of product.
Background technology
In solar cell sorting test, unusual sheet often appears.Unusual sheet concrete manifestation form is: series resistance Rs big (Rs is greater than 10m Ω), fill factor, curve factor FF little (normal FF=70%-75%) according to the stepping rule, belongs to the TRASH sheet.Unusual sheet taken in the sintering furnace heavily burn, the back side goes out the pill of aluminium, and improved efficiency is little.
The situation of improving sintering at present has annealing furnace, improves the passivation effect of battery sheet.Common hydrogen annealing stove has following shortcoming: 1, be unfavorable for large-scale production; 2, equipment uses hydrogen annealing, and coefficient of safety is low; 3, the battery sheet is through twice pyroprocess, and thermal stress is aggravated, and fragment rate can increase.
Summary of the invention
The technical problem that the present invention will solve is; Weak point to the prior art existence; Propose a kind of method of improving unusual sheet in the crystal silicon solar batteries sheet, under the situation that does not influence battery sheet outward appearance, improve the unusual sheet in the crystal silicon solar batteries sheet; Promptly improve the qualification rate and the electricity conversion of battery sheet, make it to become normal sheet.
Technical scheme of the present invention is:
A kind of method of improving in the crystal silicon solar batteries sheet unusual sheet is immersed in unusual sheet in the HF acid that mass concentration is 1%-5% after 30 seconds-90 seconds, uses rinsed with deionized water, and nitrogen dries up and gets final product; Said unusual sheet is that series resistance Rs is greater than 10m Ω in the unit for electrical property parameters, and fill factor, curve factor FF is less than 75%, and photoelectric conversion efficiency is lower than 17% crystal silicon solar batteries sheet.
Preferably unusual sheet being immersed in mass concentration is in 5% the HF acid 60 seconds.
Preferably used rinsed with deionized water 55 seconds-65 seconds, and totally be advisable so that HF acid is removed.
Battery sheet after at last nitrogen being dried up is taken sorting test again on the sorting tester,, select qualified products.
Do further explanation and explanation in the face of the present invention down:
Principle of the present invention is following:
Sintering furnace adopts at present only needs once sintered co-firing technology, forms the ohmic contact of upper/lower electrode simultaneously.The silver slurry, the silicon chip of silver-colored aluminium paste, aluminium paste printing volatilizees organic solvent through oven dry fully, and rete shrinks becomes the decorating film tight adhesion on silicon chip, at this moment can be considered metal electrode material layer and silicon chip and contacts.When the heating of electrode metal material and single crystal silicon semiconductor reached eutectic temperature, the monocrystalline silicon atom was added in the alloy electrode material of fusion in certain proportion.The whole process that the monocrystalline silicon atom is added in the electrode metal is quickish, and general needs a few times in second.The monocrystalline silicon atom number that dissolves in depends on the volume of alloy temperature and electrode material, and the sintered alloy temperature is high more, and the electrode metal material volume is big more, and the silicon atom number that then dissolves in is also many more, and state at this moment is called as the alloy system of crystalline electrode metal.If this moment, temperature reduced, system begins to cool down the formation recrystallized layer, and the silicon atom that at this moment originally was added in the electrode metal material crystallizes out with solid-state form again, just on metal and crystal contact interface, grows one deck epitaxial loayer.If epitaxial loayer contain q.s with the identical impurity composition of original crystalline material conduction type, this has just obtained to form ohmic contact with alloyage technology; If contain q.s at crystallizing layer with the special-shaped impurity composition of original crystalline material conduction type, this has just obtained to form P-N with alloyage technology and has tied.Because sintering process is fast, have the situation of only a few slice, thin piece underburnt inevitably, the ohmic contact that upper/lower electrode does not form causes Rs big, and FF is little, and efficient is low.
The present invention reaches the raising optoelectronic transformation efficiency through the processing time of controlling acid with sour concentration, and H+ and F-that HF acid ionization goes out are through the inner microstructure of this twin crystal; The passivation dangling bonds; Make upper/lower electrode form good Ohmic contact, Rs diminishes, and photoelectric conversion efficiency gets a promotion.
Compared with prior art, advantage of the present invention is:
A kind of method of improving in the crystal silicon solar batteries sheet unusual sheet of the present invention, the Rs that handles the unusual sheet in back with fill FF and recover normal, it is normal that efficiency eta is also recovered; Without equipment investment,, flexible without hazardous gas; Can not produce simultaneously pyroprocess for the second time, avoid thermal stress.This method can effectively improve and remedies the sintering defective, improves the photoelectric conversion efficiency (improving more than 1%) of crystal silicon solar batteries, thereby improves the qualification rate of battery sheet.
Embodiment
The content that embodiment illustrates is to be understood that to these embodiment and only is used to be illustrated more clearly in the present invention; And be not used in the restriction scope of the present invention; After having read the present invention, those skilled in the art all fall within the application's accompanying claims institute restricted portion to the modification of the various equivalent form of values of the present invention.
Embodiment 1:
The present invention is that example describes with the monocrystalline.
The unit for electrical property parameters of unusual sheet 1 is following: series resistance Rs is 21m Ω, and fill factor, curve factor FF is 69.5%, and efficient is 15.93%.
It is in 5% the HF acid after 30 seconds that unusual sheet is immersed in mass concentration, and with rinsed with deionized water clean (60 seconds), nitrogen dries up and gets final product; Battery sheet after handling is taken sorting test again on the sorting tester, and the result sees table 1, qualified products.It is thus clear that the present invention can improve the unusual sheet that solar battery sheet occurs significantly, improve the electricity conversion (improving 1.5%) of battery sheet, improve the qualification rate of finished product.This method weak point consuming time, treatment effeciency is high, and operability is very strong.
Embodiment 2:
The present invention is that example describes with the monocrystalline.
The unit for electrical property parameters of unusual sheet 2 is following: series resistance Rs is 12m Ω, and fill factor, curve factor FF is 70.2%, and efficient is 16.05%.
It is in 3% the HF acid after 60 seconds that unusual sheet is immersed in mass concentration, and with rinsed with deionized water clean (55 seconds), nitrogen dries up and gets final product; Battery sheet after handling is taken sorting test again on the sorting tester, and the result sees table 1, qualified products.It is thus clear that the present invention can improve the unusual sheet that solar battery sheet occurs significantly, improve the electricity conversion (improving 1.55%) of battery sheet, improve the qualification rate of finished product.This method weak point consuming time, treatment effeciency is high, and operability is very strong.
Embodiment 3:
The present invention is that example describes with the monocrystalline.
The unit for electrical property parameters of unusual sheet 3 is following: series resistance Rs is 10m Ω, and fill factor, curve factor FF is 71%, and efficient is 16.2%.
It is in 1.5% the HF acid after 90 seconds that unusual sheet is immersed in mass concentration, and with rinsed with deionized water clean (65 seconds), nitrogen dries up and gets final product; Battery sheet after handling is taken sorting test again on the sorting tester, and the result sees table 1, qualified products.It is thus clear that the present invention can improve the unusual sheet that solar battery sheet occurs significantly, improve the electricity conversion (improving 1.5%) of battery sheet, improve the qualification rate of finished product.This method weak point consuming time, treatment effeciency is high, and operability is very strong.
Table 1 improves the unit for electrical property parameters behind the unusual sheet with HF acid
Can find out that from table 1 Rs that handles the unusual sheet in back recovers normal with filling FF, and efficiency eta can improve about 1.5%.Method of the present invention can improve the qualification rate of battery sheet effectively.
Claims (4)
1. a method of improving in the crystal silicon solar batteries sheet unusual sheet is characterized in that, unusual sheet is immersed in the HF acid that mass concentration is 1%-5% after 30 seconds-90 seconds, uses rinsed with deionized water, and nitrogen dries up and gets final product; Said unusual sheet is that series resistance Rs is greater than 10m Ω in the unit for electrical property parameters, and fill factor, curve factor FF is less than 75%, and photoelectric conversion efficiency is lower than 17% crystal silicon solar batteries sheet.
2. according to the said method of improving in the crystal silicon solar batteries sheet unusual sheet of claim 1, it is characterized in that it is in 5% the HF acid 60 seconds that unusual sheet is immersed in mass concentration.
3. according to the said method of improving unusual sheet in the crystal silicon solar batteries sheet of claim 1, it is characterized in that using the time of rinsed with deionized water is 55 seconds-65 seconds.
4. according to the said method of improving unusual sheet in the crystal silicon solar batteries sheet of one of claim 1-3, it is characterized in that the battery sheet after nitrogen is dried up is taken sorting test again on the sorting tester, selects qualified products.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104446304A CN102496657A (en) | 2011-12-27 | 2011-12-27 | Method for improving abnormal crystalline silicon solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104446304A CN102496657A (en) | 2011-12-27 | 2011-12-27 | Method for improving abnormal crystalline silicon solar cell |
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| CN102496657A true CN102496657A (en) | 2012-06-13 |
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| CN2011104446304A Pending CN102496657A (en) | 2011-12-27 | 2011-12-27 | Method for improving abnormal crystalline silicon solar cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102983227A (en) * | 2012-12-13 | 2013-03-20 | 百力达太阳能股份有限公司 | Method of avoiding poor appearances of solar cells after oxidation |
| CN114843369A (en) * | 2022-04-28 | 2022-08-02 | 晶科能源(海宁)有限公司 | Monitoring method of solar cell preparation process |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6068788A (en) * | 1995-11-15 | 2000-05-30 | Daikin Industries, Ltd. | Wafer-cleaning solution and process for the production thereof |
| CN1810394A (en) * | 2005-12-19 | 2006-08-02 | 刘培东 | Production process of silicon wafter for solar cell with waste IC chips |
| CN101276856A (en) * | 2008-04-30 | 2008-10-01 | 苏州纳米技术与纳米仿生研究所 | Process and equipment for etching and drying silicon solar cell |
-
2011
- 2011-12-27 CN CN2011104446304A patent/CN102496657A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6068788A (en) * | 1995-11-15 | 2000-05-30 | Daikin Industries, Ltd. | Wafer-cleaning solution and process for the production thereof |
| CN1810394A (en) * | 2005-12-19 | 2006-08-02 | 刘培东 | Production process of silicon wafter for solar cell with waste IC chips |
| CN101276856A (en) * | 2008-04-30 | 2008-10-01 | 苏州纳米技术与纳米仿生研究所 | Process and equipment for etching and drying silicon solar cell |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102983227A (en) * | 2012-12-13 | 2013-03-20 | 百力达太阳能股份有限公司 | Method of avoiding poor appearances of solar cells after oxidation |
| CN114843369A (en) * | 2022-04-28 | 2022-08-02 | 晶科能源(海宁)有限公司 | Monitoring method of solar cell preparation process |
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Application publication date: 20120613 |