CN102486414A - Temperature sensor circuit - Google Patents
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Abstract
The invention relates to a temperature sensor circuit, which comprises a first signal generator, a second signal generator and a signal processor which are connected by a circuit, wherein the output ends of the first signal generator and the second signal generator are connected with the input end of the signal processor. According to the invention, in order to avoid the defect that the traditional time domain signal-based temperature sensor is easily influenced by the manufacture process of an integrated circuit, two time domain signals relative to the temperature are converted into digital codes through the signal processor, the converted signal codes are only relative to the relative values of the parameters of devices in the integrated circuit, and are not relative to absolute values of the parameters of devices in the integrated circuit, thus, the temperature sensor circuit is not easily influenced by the manufacture process of the integrated circuit, and is more easily controlled and realized.
Description
Technical Field
The present invention relates to a temperature sensor circuit.
Background
In industrial control and power systems, ambient temperature is an important parameter to measure. Therefore, the temperature sensor is widely used in the system. The integrated circuit temperature sensor has the advantages of small volume, low cost, easy integration and the like.
However, the conventional integrated circuit temperature sensor is based on the triode base-emitter voltage VBEThe temperature characteristic of the voltage signal generates a PTAT (proportional To temperature) voltage signal Δ VBEVoltage, then the Δ V is converted by a high precision Analog-to-Digital Converter (ADC)BEThe voltage is converted to a digital code. The main disadvantages are: 1.Δ VBEThe voltage is relatively small, so that the requirement on the precision of the ADC is high, or a special amplifying circuit is required to amplify the ADC. 2. The area and power consumption of the high-precision ADC are large, and the difficulty in reducing the power consumption and the cost of a system is brought.
In addition, most conventional temperature sensors based on time domain signals are implemented by comparing one temperature-dependent signal with another temperature-independent reference signal.
Karim Arabi et al use the temperature characteristics of resistors in an integrated circuit to measure temperature (see K. Arabi, and B. Kaminska, "build-in temperature sensors for on-line thermal monitoring of microelectronic structures," in Proc. ICCD, 1997). A current source inversely proportional to the resistance is generated by the resistance, and the current generated by the current source is input into a ring oscillator circuit controlled by the current to generate a clock signal with a period proportional to the resistance. The resistance changes with temperature, and therefore, the clock period changes with temperature. The temperature can be measured by measuring the period of the clock. However, the temperature coefficient of the temperature sensor with such a structure is directly related to the temperature coefficient of the resistor, and the temperature coefficient of the resistor in the integrated circuit is relatively low, so that the resolution of the temperature sensor is low; and the linearity of the resistance temperature characteristic in the integrated circuit is poor, and the discreteness is large, so that the temperature sensor with the structure has low precision and large discreteness.
Poki Chen et al generate a Pulse signal proportional To the Pulse width and Temperature by using the Temperature characteristic of carrier mobility, and then convert it into Digital code by using Pulse-Shinking TDC Time/Digital Converter (Time-To-Digital-Converter) (refer To Poki Chen, Chun-Chi Chen, Wen-Fu Lu, and Chin-Chung Tsai, "A Time-To-Digital-Converter-Based CMOS Smart Temperature Sensor," IEEE J. solution-State Circuits, vol. 40, No. 8, pp. 1642-1648, and Aug. 2005). However, the working conditions of such a temperature sensor are harsh, and the power supply voltage is much higher than the threshold voltage V of the MOS field effect transistorTH(ii) a Temperature independent Pulse-Shinking Delay (Pulse reduction Delay) please provide Chinese, thank you! The MOS field effect transistor in the unit needs to work under the condition of strong inversion, and is not suitable for the working condition of low voltage and low power consumption; the output code is directly related to the threshold voltage of the MOS field effect transistor and the mobility of a current carrier, so that the temperature coefficient of an output result is greatly influenced by the manufacturing process of the integrated circuit, and high-temperature and low-temperature two-point adjustment is needed.
Chan-Kyung Kim et al in patent specification US7581881(B2) implement a temperature sensor that converts temperature directly into a digital code by counting two clock signals, one clock cycle being temperature dependent and the other clock cycle being temperature independent. The clock signal related to the temperature is directly generated by the resistor, the absolute value and the temperature coefficient of the resistor in the integrated circuit can change greatly along with the process error, meanwhile, the clock period unrelated to the temperature is realized by adopting the MOS field effect transistor, the threshold voltage and the carrier mobility of the MOS field effect transistor can also change greatly along with the process error, and therefore, the process deviation of the integrated circuit can have great influence on the temperature coefficient and the linearity of the whole temperature sensor.
Disclosure of Invention
The invention provides a temperature sensor circuit, in order to avoid the disadvantage that the traditional temperature sensor based on time domain signals is easily influenced by the integrated circuit manufacturing process, two time domain signals related to temperature are converted into digital codes through a signal processor, and the converted digital codes are only related to the relative values of device parameters in the integrated circuit and are irrelevant to the absolute values of the device parameters, so the temperature sensor circuit is not easily influenced by the integrated circuit manufacturing process and is more easily controlled and realized.
In order to achieve the above object, the present invention provides a temperature sensor circuit, which comprises a first signal generator, a second signal generator and a signal processor connected in circuit. And the output ends of the first signal generator and the second signal generator are connected with the input end of the signal processor.
The first signal generator generates a signal which is related to temperature, and the second signal generator generates a signal which is related to temperature and has a determined functional relation with the signal generated by the first signal generator; the signal generated by the first signal generator and the signal generated by the second signal generator are input into a signal processor for processing, and the signal processor finally outputs a digital code having a functional relation with the temperature.
The first signal generator is a circuit capable of generating a pulse signal or a clock signal, wherein the pulse width or the period of the generated pulse signal is a function of at least one device parameter in the circuit, the function at least comprises one device parameter related to temperature, and the device parameter is in a linear relation with the temperature, or in an inverse proportional relation, or in a square relation, or in other relations, and the device parameter related to the pulse width or the clock period in the function is related to the temperature or is not related to the temperature.
The first signal generator comprises a first PTAT current generator and a first clock generator, wherein the current output end of the first PTAT current generator is connected to the input end of the first clock generator, the first PTAT current generator generates a current, and the first clock generator is controlled by the input current to generate a clock signal with a period related to the input current.
The first signal generator comprises a plurality of triodes, resistors, capacitors and inverters which are connected by circuits, and a plurality of transistors form a current mirror.
The clock period of the clock signal generated by the first signal generator is a function of the voltage difference between the base electrode and the emitter electrode of the triode, the resistance value of the resistor, the capacitance value of the capacitor, the overturning threshold value of the inverter and the current amplification factor of the current mirror; the voltage difference between the base electrode and the emitting electrode of the triode is in a linear relation with the temperature, the resistance value of the resistor, the capacitance value of the capacitor and the overturning threshold value of the inverter are functions of the temperature, and the current amplification factor of the current mirror is irrelevant to the temperature.
The clock period of the clock signal generated by the first signal generator is a function of the voltage difference between the grid electrode and the source electrode of the field effect transistor, the resistance value of the resistor, the capacitance value of the capacitor, the overturning threshold value of the inverter and the current amplification factor of the current mirror;
the voltage difference between the grid electrode and the source electrode of the field effect transistor is in a linear relation with the temperature, the resistance value of the resistor, the capacitance value of the capacitor and the overturning threshold value of the phase inverter are functions of the temperature, and the current amplification factor of the current mirror is irrelevant to the temperature.
The second signal generator is a circuit capable of generating a pulse signal or clock signal having a pulse width or clock signal period that is a function of at least one device parameter in the circuit that is either temperature dependent or temperature independent.
Meanwhile, the ratio of the pulse width or the period of the clock signal generated by the second signal generator to the pulse width or the period of the clock signal generated by the first signal generator has a determined functional relationship with the temperature.
The second signal generator comprises a second PTAT current generator, a CTAT current generator and a second clock generator, the output ends of the second PTAT current generator and the CTAT current generator are connected with the input end of the second clock generator, the second PTAT current generator and the CTAT current generator respectively generate current to be output to the second clock generator, and the second clock generator is controlled by two input currents to generate a clock signal S2, the period of which is related to the input currents.
The second PTAT current generator may employ the same circuit configuration as the first PTAT current generator.
In the circuit structure of the second signal generator, the second PTAT current generator and the CTAT current generator can be combined into the same current generator, and the first clock generator is used for replacing the original second clock generator.
The second signal generator comprises a plurality of triodes, resistors, capacitors and inverters which are connected by circuits, and a plurality of transistors form a current mirror.
The clock period of the clock signal generated by the second signal generator is a function of the voltage difference between the base electrode and the emitter electrode of the triode, the base electrode and the emitter electrode voltage of the triode, the resistance value of the resistor, the capacitance value of the capacitor, the overturning threshold value of the inverter and the current amplification multiple of the current mirror;
the voltage difference between the base electrode and the emitter electrode of the triode, the voltage between the base electrode and the emitter electrode of the triode, the resistance value of the resistor, the capacitance value of the capacitor and the overturning threshold value of the inverter are functions of temperature, and the current amplification factor of the current mirror is irrelevant to the temperature.
So that the temperature systems of the same device parameters in the first signal generator and the second signal generator cancel each other out.
The first signal generator and the second signal generator adopt the same type of capacitors with the same temperature coefficient and can be mutually counteracted, adopt the same type of resistors with the same temperature coefficient and can be mutually counteracted, adopt the same type of inverters with the same temperature coefficient and can be mutually counteracted, and select counteracting parameters so that the voltage difference between the base electrode and the emitter electrode of the triode and the temperature coefficient of the base electrode and the emitter electrode of the triode are mutually counteracted.
The signal processor is a circuit capable of converting a time-dependent signal such as a pulse or a clock into a digitally encoded signal, two signal input terminals of the signal processor are a converted signal input terminal and a reference signal input terminal, respectively, the two signal input terminals are connected to an output terminal of the first signal generator and an output terminal of the second signal generator, respectively, and the signal processor outputs a digital code having a specific functional relationship with temperature.
The invention does not need to construct a signal which is in linear relation with temperature and a signal which is not related with temperature, but directly processes two time signals which are related with temperature to obtain a digital code which has a determined functional relation with temperature. The parameters related to temperature and process in the circuit are mutually offset in the processing process of the signal processor, so that the output result is not easily influenced by the manufacturing process of the integrated circuit.
Drawings
FIG. 1 is a schematic diagram of a temperature sensor circuit according to the present invention;
FIG. 2 is a schematic diagram of a first signal generator of the temperature sensor circuit provided by the present invention;
FIG. 3 is a circuit diagram of a first embodiment of a first PTAT current generator within a first signal generator of the temperature sensor circuit provided by the present invention;
FIG. 4 is a circuit diagram of a second embodiment of a first PTAT current generator within a first signal generator of the temperature sensor circuit provided by the present invention;
FIG. 5 is a circuit diagram of a third embodiment of a first PTAT current generator within a first signal generator of the temperature sensor circuit provided by the present invention;
FIG. 6 is a circuit diagram of a fourth embodiment of a first PTAT current generator within a first signal generator of the temperature sensor circuit provided by the present invention;
FIG. 7 is a circuit diagram of a first clock generator within a first signal generator of the temperature sensor circuit provided by the present invention;
FIG. 8 is a schematic diagram of a second signal generator of the temperature sensor circuit provided by the present invention;
FIG. 9 is a circuit diagram of a CTAT current generator within a second signal generator of the temperature sensor circuit provided by the present invention;
FIG. 10 is a circuit diagram of a second clock generator within a second signal generator of the temperature sensor circuit provided by the present invention;
FIG. 11 is a schematic diagram of another configuration of a second signal generator of the temperature sensor circuit provided by the present invention;
FIG. 12 is a timing diagram of signal processing by the signal processor according to the present invention.
Detailed Description
The preferred embodiment of the present invention is described in detail below with reference to fig. 1 to 12:
as shown in fig. 1, the structure of the temperature sensor circuit provided by the present invention is schematically illustrated, and the temperature sensor circuit includes a first signal generator 101, a second signal generator 102 and a signal processor 103. The output terminals of the first signal generator 101 and the second signal generator 102 are connected to the input terminal of the signal processor 103.
The first signal generator 101 generates a temperature dependent signal S1The second signal generator 102 generates a signal S which is temperature-dependent and which has a defined functional relationship with the signal generated by the first signal generator 1012(ii) a The signal generated by the first signal generator 101 and the signal generated by the second signal generator 102 are input to the signal processor 103 for processing, and the signal processor 103 finally outputs a digital code TN having a functional relationship with temperature.
The first signal generator 101 generates a time domain pulse signal or clock signal S1The pulse width of the pulse signal or the clock period T of the clock signalS1Is a function of at least one device parameter in the circuit, the function including at least one temperature-dependent device parameter that is either linear or inversely proportional to temperature or squared or otherwise, and the function including a pulse width or clock period-dependent device parameter that is either temperature-dependent or temperature-independent.
In the formula, X1(T), X2(T), … denotes temperature dependent device parameters in the circuit, and a, b, … denotes temperature independent parameters.
As shown in fig. 2, the first signal generator 101 includes a first PTAT (Proportional To Absolute Temperature) current generator 1011 and a first clock generator 1012.
The current output end of the first PTAT current generator 1011 is connected to the input end of the first clock generator 1012, and the first PTAT current generator 1011 generates a current I1(T), the first clock generator 1012 is controlled by the input current to generate a cycle related to the input currentClock signal S of1。
As shown in fig. 3, which is a circuit configuration diagram of an embodiment of the first PTAT current generator 1011, the first transistor Q1 has a base and a collector connected to ground, an emitter connected to one end of a resistor R1, the other end of R1 connected to the non-inverting input terminal of an operational amplifier OP1, the second transistor Q2 has a base and a collector connected to ground, an emitter connected to the inverting input terminal of an OP1, a source of the first pfet MP1 connected to a power supply, a gate connected to the output terminal of the OP1, a drain connected to the non-inverting input terminal of the OP1, a source of the second pfet MP2 connected to the power supply, a gate connected to the output terminal of the OP1, a drain connected to the inverting input terminal of the OP1, a source of the third pfet MP3 connected to the power supply, a gate connected to the output terminal of the OP1, a drain connected to the current input terminal of the first clock generator, providing current to the first clock generator. The ratio of the width to length ratio of the current mirror composed of the P-type field effect transistors MP1, MP2, and MP3 is 1:1: a, and in this embodiment, a = 1.
The current I generated by the first PTAT current generator 10111(T) and the difference DeltaV between the base-emitter voltages of the two transistors Q1, Q2BE1=VBE_Q2-VBE_Q1Proportional, inversely proportional to the resistance of resistor R1, can be expressed as:
wherein q is the electric quantity per unit charge, k0And m is the boltzmann constant, and the emitter area ratio of the triodes Q1 and Q2.
The first PTAT current generator 1011 may be implemented in a number of ways. Several common techniques are listed below:
as shown in fig. 4, which is a schematic structural diagram of another conventional PTAT current source generator, compared with fig. 3, the circuit structure in fig. 4 omits an operational amplifier OP1, and adds an NMOS current mirror composed of N-type field effect transistors MN1 and MN2, and the expression of the output current of the PTAT current source generator in fig. 4 is the same as that of formula (2), but the lowest operating voltage is slightly higher than that of the circuit in fig. 3.
The transistor of fig. 3 and 4 may be replaced by a diode, and the expression of the output current of the PTAT current source generator may be expressed as:
in the formula, VpnAnd m is the junction area of the pn junction in the diode.
Fig. 5 is a circuit structure of another conventional PTAT current source generator, compared with the circuit structure in fig. 3, the PTAT current source generator in fig. 5 omits an operational amplifier OP1 and transistors Q1 and Q2, adds an NMOS current mirror composed of N-type field effect transistors MN1 and MN2, MN1 and MN2 operate in a sub-threshold region, the ratio of the width-to-length ratio of MN1 to MN2 is m:1, and the expression of the output current is slightly different from the expression (3) and can be expressed as:
in the formula,. DELTA.VGS1Is the gate-source voltage difference of the field effect transistors MN2 and MN1, i.e.: Δ VGS1= VGSMN2- VGSMN1And n is a sub-threshold slope factor, process dependent, constant.
Fig. 6 is a circuit configuration of another conventional PTAT current source generator, which is similar to fig. 5, and the expression of the output current is the same as equation (4).
As shown in FIG. 7, is the power of one embodiment of the first clock generator 1012Road structure diagram, first current source I1From MP3 in the first PTAT current generator 1011, the drain output of MP3 is connected to one terminal of a first capacitor C1, and the other terminal of the capacitor C1 is connected to ground. The input end of the first inverter INV1 is connected to one end of the capacitor C1 connected to the current source, the output end is connected to the input end of the second inverter INV2, the output end of the second inverter INV2 is connected to the gate of the N-type field effect transistor MN1, the source of the MN1 is connected to the ground, the drain is connected to the node where the current source is connected to the capacitor, and the output end INV2 of the second inverter is the output end of the clock generator.
The clock signal S generated by the first clock generator 10121Period T ofS1Can be expressed as:
in the formula, VT1Is the flip threshold of the inverter.
In the above embodiment, the first signal generator generates a clock signal S1Clock period T of the signalS1Is triode base-emitter voltage difference delta VBEResistance value R of the resistor1Capacitance value C of capacitor1Inverter flip threshold VT1And the current amplification a of the current mirror. Wherein, the base-emitter voltage difference V of the triodeBELinear relation with temperature, resistance R1Capacitance value C of capacitor1And an inverter flip threshold VT1Is a function of temperature, the current amplification factor a of the current mirror is independent of temperature, a =1 in this embodiment. Namely:
（6）
the second signal generator generates a pulse signal or clock signal of another time domainS2The pulse width of the pulse signal or the clock period T of the clock signalS2Is a function of at least one device parameter in the circuit, which is either temperature dependent or temperature independent.
At the same time, the pulse width of the pulse signal or the clock period T of the clock signal generated by the second signal generatorS2And the pulse width of the pulse signal generated by the first signal generator or the clock period T of the clock signalS1Satisfies the following relationship:
namely TS2And TS1There is a defined functional relationship between the ratio of (d) and the temperature.
As shown in fig. 8, the second signal generator 102 comprises a second PTAT current generator 1022, a CTAT (Complementary To Absolute Temperature) current generator 1021, and a second clock generator 1023.
The output terminals of the second PTAT current generator 1022 and the CTAT current generator 1021 are connected to the input terminal of the second clock generator 1023, and the second PTAT current generator 1022 and the CTAT current generator 1021 generate the current I2(T) and I3(T) to a second clock generator 1023, which second clock generator 1023 is supplied with two input currents I2(T) and I3(T) generating a clock signal S having a period related to the input current2。
The second PTAT current generator 1022 may employ the same circuit configuration as the first PTAT current generator 1011, or other similar configurations.
Current I generated by the second PTAT current generator 10222(T) and the difference DeltaV between the base-emitter voltages of the two triodesBEIs in direct proportion.
Current I2(T) the current I generated by the PTAT current generator 1011 in the first signal generator may also be used directly1(T), can be represented by I2(T)=I1(T)=ΔVBE1/R1。
As shown in fig. 9, which is a circuit structure diagram of an embodiment of the CTAT current generator 1021, the base and the collector of the transistor Q3 are connected to ground, the emitter is connected to the inverting input terminal of the operational amplifier OP2, the non-inverting input terminal of OP2 is connected to one terminal of the resistor R2, the other terminal of the resistor R2 is connected to ground, the source of the pfet MP4 is connected to the power supply, the gate is connected to the output terminal of the OP2, the drain is connected to the inverting input terminal of OP2, the source of the pfet MP5 is connected to the power supply, the gate is connected to the output terminal of the operational amplifier OP2, the drain is connected to the non-inverting input terminal of the operational amplifier OP2, the source of the pfet MP6 is connected to the power supply, the gate is connected to the output terminal of the operational amplifier OP2, and the drain output terminal is. The ratio of the width to length ratios of the current mirrors consisting of MP6, MP5 and MP4 is constant 1:1: b.
Current I generated by CTAT current generator 10213(T) and base-emitter voltage V of triodeBE3Proportional to the resistance R2Is inversely proportional and is represented as I3(T)= b*VBE3/R2. b is chosen such that Δ VBE1And VBE3The temperature coefficients of (a) and (b) cancel each other, that is, the following condition is satisfied:
FIG. 10 is a circuit diagram of an embodiment of a second clock generator 1023, a second currentSource I2Provided by a second PTAT current generator 1022, a third current source I3Provided by a CTAT current generator 1021. The output terminals of the second PTAT current generator 1022 and the CTAT current generator 1021 are both connected to one terminal of a second capacitor C2, the other terminal of the capacitor C2 being connected to ground. The input end of a third inverter INV3 is connected to one end of the capacitor C2 connected to the current generator, the output end of the third inverter INV3 is connected to the input end of the fourth inverter INV4, the output end of the fourth inverter INV4 is the output end of the clock generator, the output end of the fourth inverter INV4 is simultaneously connected to the gate of the N-type field effect transistor MN2, the source of MN2 is connected to the ground, and the drain is connected to the node where the current generator is connected to the capacitor.
The second clock generator 1023 outputs a clock signal S2The period of (d) is represented as:
in the formula, VT3Is the flip threshold of the inverter.
The pulse width of the pulse signal or the clock period T of the clock signal generated by the second signal generatorS2(T) and the pulse width of the pulse signal generated by the first signal generator or the clock period T of the clock signalS1The proportional relationship between (T) is expressed as:
where m is the emitter area ratio of the two transistors in the first signal generator 101, independent of temperature, C1And C2The same type of capacitors with the same temperature coefficient can be used to cancel each other, R1And R2The same type of resistors with the same temperature coefficient can be used to offset each other, and the proper parameter b can be selected to make Δ VBE2And VBEAre cancelled out and the inverters or comparators in the clock generator are identical, i.e. VT1=VT3So that N is independent of temperature and is not easily affected by process deviation of the integrated circuit.
Fig. 11 shows another implementation of the second signal generator, which combines the second PTAT current generator and the CTAT current generator into the same current generator 1024, while the original second clock generator is replaced by the first clock generator 1012. The output signal expression of fig. 11 is substantially the same as equation (8) except that b is equal to 1.
The transistors in fig. 9 and 11 may be replaced with diodes.
Many pairs of triodes V in the prior artBEMay be applied to the current generator in the second signal generator.
In the above embodiment, the second signal generator 102 generates a clock signal S2Time period T of the clockS2For a voltage difference DeltaV between base electrode and emitter electrode of the triodeBETriode base-emitter voltage VBEResistance value R of the resistor1And R2Capacitance value C of capacitor2Inverter flip threshold VT3And the current amplification b of the current mirror. Wherein, is Δ VBE、VBE、R2、C2And VT3Is a function of temperature and the current amplification b of the current mirror is independent of temperature. Namely:
（13）
TS2(T) and TS1(T) the following relationship exists:
wherein,is Δ VBE、VBE、R1 /R2、C2 /C1And VT3/VT1And is independent of temperature or its variation with temperature is negligible compared to the variation of temperature itself.
Is linear with temperature.
The signal processor 103 converts a time-dependent signal such as a pulse or a clock into a digital code signal. The two signal input ports of the signal processor 103 are a converted signal input DI1 and a reference signal input DI 2. The converted signal input DI1 is connected to the output of the first signal generator 101 and the reference signal input DI2 is connected to the output of the second signal generator 102. The signal processor 103 counts the number TN of the cycles of the converted signal DI1 in a counting manner, as shown in fig. 12, with M times the cycle of the reference signal DI2 being the standard time period, and the counting result is the final result of the temperature sensor, which is linear with the temperature, as shown in the following formula:
the signal processor may employ a Time-to-Digital Converter TDC (Time-to-Digital Converter).
The temperature sensor in the invention does not need to construct a signal which is in linear relation with temperature and a signal which is irrelevant with temperature, thereby simplifying the structure of a circuit, the temperature coefficient of an output result is only relevant to the proportion of device parameters, and the relative values are easier to realize and control in the manufacturing process of an integrated circuit, so that the temperature coefficient of the output result is slightly influenced by the process deviation of the integrated circuit.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (15)
1. A temperature sensor circuit, characterized in that, the temperature sensor circuit comprises a first signal generator (101), a second signal generator (102) and a signal processor (103) which are connected in circuit, the output ends of the first signal generator (101) and the second signal generator (102) are connected with the input end of the signal processor (103);
the first signal generator (101) generating a temperature-dependent signal (S1), the second signal generator (102) generating a temperature-dependent signal (S2) having a determined functional relationship with the signal generated by the first signal generator (101); the signal (S1) generated by the first signal generator (101) and the signal (S2) generated by the second signal generator (102) are input into the signal processor (103) for processing, and the signal processor (103) finally outputs a digital code (TN) having a function relation with the temperature.
2. A temperature sensor circuit according to claim 1, characterized in that the first signal generator (101) is a circuit capable of generating a pulse signal or a clock signal having a pulse width or a period (T) of the clock signalS1) Is a function of at least one device parameter in the circuit, the function including at least one temperature-dependent device parameter that is either linear or inversely proportional or squared, the pulse width or clock cycle-dependent device parameter being either temperature-dependent or temperature-independent.
3. The temperature sensor circuit of claim 2, wherein the first signal generator (101) comprises a first PTAT current generator (1011) and a first clock generator (1012), a current output of the first PTAT current generator (1011) is connected to an input of the first clock generator (1012), the first PTAT current generator (1011) generates a current, and the first clock generator (1012) is controlled by the input current to generate a clock signal (S1) having a period related to the input current.
4. A temperature sensor circuit according to claim 3, wherein the first signal generator (101) comprises a plurality of transistors, field effect transistors, resistors, capacitors, inverters, which are electrically connected, and wherein the plurality of transistors form a current mirror.
5. The temperature sensor circuit of claim 4, wherein the temperature sensor circuit comprisesA clock signal (S) generated by said first signal generator1) Clock period (T) ofS1) Is a function of the triode base-emitter voltage difference, the resistance value of the resistor, the capacitance value of the capacitor, the inverter turnover threshold value and the current amplification factor of the current mirror;
the voltage difference between the base electrode and the emitting electrode of the triode is in a linear relation with the temperature, the resistance value of the resistor, the capacitance value of the capacitor and the overturning threshold value of the inverter are functions of the temperature, and the current amplification factor of the current mirror is irrelevant to the temperature.
6. Temperature sensor circuit according to claim 4, characterized in that the first signal generator generates a clock signal (S)1) Clock period (T) ofS1) Is a function of the field effect transistor gate-source voltage difference, the resistance value of the resistor, the capacitance value of the capacitor, the inverter flip threshold value and the current amplification factor of the current mirror;
the voltage difference between the grid electrode and the source electrode of the field effect transistor is in a linear relation with the temperature, the resistance value of the resistor, the capacitance value of the capacitor and the overturning threshold value of the phase inverter are functions of the temperature, and the current amplification factor of the current mirror is irrelevant to the temperature.
7. A temperature sensor circuit according to claim 1, characterized in that the second signal generator (102) is a circuit capable of generating a pulse signal or a clock signal having a pulse width or a period (T) of the clock signalS2) Is a function of at least one device parameter in the circuit, which is either temperature dependent or temperature independent;
at the same time, the pulse width of the pulse signal or the period (T) of the clock signal generated by the second signal generator (102)S2) With the pulse width of the pulse signal generated by the first signal generator (101) or the period (T) of the clock signalS1) Has a defined functional relationship with temperature.
8. A temperature sensor circuit according to claim 7, wherein the second signal generator (102) comprises a second PTAT current generator (1022), a CTAT current generator (1021) and a second clock generator (1023), the outputs of the second PTAT current generator (1022) and the CTAT current generator (1021) being connected to the input of the second clock generator (1023), the second PTAT current generator (1022) and the CTAT current generator (1021) generating respective currents for output to the second clock generator (1023), the second clock generator (1023) being controlled by two input currents to generate a clock signal (S2) having a period related to the input currents.
9. A temperature sensor circuit according to claim 8 or claim 3, wherein the second PTAT current generator (1022) is of the same circuit configuration as the first PTAT current generator (1011).
10. A temperature sensor circuit according to claim 3, 8 or 9, characterized in that the second signal generator (102) combines a second PTAT current generator and a CTAT current generator into one and the same current generator (1024), while the first clock generator (1012) replaces the second clock generator.
11. The temperature sensor circuit of claim 10, wherein the second signal generator (102) comprises a plurality of transistors, resistors, capacitors, and inverters electrically connected to form a current mirror.
12. Temperature sensor circuit according to claim 11, characterized in that the clock signal (S) generated by the second signal generator (102)2) Clock period (T) ofS2) Is a function of the triode base-emitter voltage difference, the triode base-emitter voltage, the resistance value of the resistor, the capacitance value of the capacitor, the inverter overturning threshold value and the current amplification factor of the current mirror;
the voltage difference between the base electrode and the emitter electrode of the triode, the voltage between the base electrode and the emitter electrode of the triode, the resistance value of the resistor, the capacitance value of the capacitor and the overturning threshold value of the inverter are functions of temperature, and the current amplification factor of the current mirror is irrelevant to the temperature.
13. A temperature sensor circuit according to claim 5 or 12, characterized in that the temperature systems of the same component parameters in the first signal generator (101) and the second signal generator (102) are caused to cancel each other out.
14. The temperature sensor circuit according to claim 13, wherein in the first signal generator (101) and the second signal generator (102):
the same type of capacitors are adopted, and the temperature coefficients of the capacitors are the same and can be mutually offset;
the same type of resistors are adopted, and the temperature coefficients are the same and can be mutually offset;
the inverters of the same type are adopted, and the temperature coefficients of the inverters are the same and can be mutually offset;
and selecting the counteracting parameters to counteract the voltage difference between the base electrode and the emitter electrode of the triode and the temperature coefficient of the base electrode and the emitter electrode of the triode.
15. A temperature sensor circuit according to claim 1, characterized in that the signal processor (103) is a circuit capable of converting a time-dependent signal, such as a pulse or a clock, into a digitally encoded signal, the signal processor (103) having two signal inputs, respectively a converted signal input and a reference signal input, which are connected to the output of the first signal generator (101) and the output of the second signal generator (102), the signal processor (103) outputting a digital code (TN) having a specific functional relationship with temperature.
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