CN102483548B - 包括光电调制器的每一面上的两个光电导层的光学寻址光阀 - Google Patents
包括光电调制器的每一面上的两个光电导层的光学寻址光阀 Download PDFInfo
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- G02F1/1396—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent the liquid crystal being selectively controlled between a twisted state and a non-twisted state, e.g. TN-LC cell
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Abstract
一种光学寻址光阀,适于选择性限制由高强度光源发出的光的透射,所述光学寻址光阀包括由两个光电导层所夹的光电调制器。
Description
技术领域
本发明涉及一种非线性光学器件,更具体地,涉及一种适于选择性限制由高强度光源发出的光的透射的光学寻址光阀。
背景技术
由高强度光源造成的眩耀,在光学系统或成像器件中是普遍问题,这种眩耀导致传感器的损坏、图像质量的降低或者用户的情境意识(situationalawareness)的丧失。当诸如日光、焊弧、车辆头灯或者激光器的高强度光源被引导到上述系统或器件时,会发生上述问题。特别是由激光器造成的饱和或眩耀,目前在军用和民用环境二者中都是普遍问题,这是由于激光器本身已经变得更小、更便宜并且更为容易利用。这进而引发了提供具有光电保护措施(EOPM)的系统和器件需求,以限制或过滤向传感器的光的透射。一种用于EOPM的方法是,通过使用光学寻址光阀(OALV)的空间阻挡来限制眩耀效应。
一种类型的OALV是通过将光敏电阻(PR)连接至设置在两个偏振器之间的电压依赖性偏振调制器而工作的,该电压依赖性偏振调制器可以是90°扭曲向列。所述偏振器相对于彼此可以被以预定角度设定,以去除特定的入射波长。所述PR和液晶层二者都位于玻璃板之间,所述玻璃板涂有透明铟锡氧化物(ITO)以作为电极。经由使用固态晶体铟(solidcrystallineindium)附接的导线,正弦波或方波电压被施加到这些ITO层。所述PR是一种体积电导率(bulkelectricalconductivity)能随着光的出现而改变的材料。通常光生电荷响应于光而造成电阻率下降。这样,穿过液晶层的压降由落到器件上的光的强度分布来确定。
一种类型的OALV包含有由铋硅氧化物(BSO)制成的光敏电阻。BSO具有卓越的光电导特性,该光电导特性包括高的暗电导率(darkconductivity)(没有光时的电导率),使BSO成为OALV的理想候选。但是,BSO本身是光学活性的。这意味着BSO导致穿过晶体介质的线偏振光的依赖于波长的旋转。这种光学活性意味着已知的BSOOALV在选择性限制单一预定有害波长方面是有效的。由于不同的波长被PR以不同的量来旋转,因此需要以预定角度设定分析偏振器,以阻挡特定的入射波长。
通过将已知的OALV合并到诸如照相机、夜视器件、瞄准器、防护眼镜等的光学系统或成像器件中,可以有效地保护传感器免受由一种预定有害波长造成的眩耀的影响。
发明内容
本发明的一个目的是提供一种适于提供改进的空间光学限制性能的OALV。
相应地,本发明提供了一种用于限制高强度光的透射的光学寻址光阀(OALV),所述光学寻址光阀包括:
输入偏振器和输出偏振器;
电压依赖性偏振调制器,所述电压依赖性偏振调制器夹在第一光敏电阻层和第二光敏电阻层之间,所述第一光敏电阻层和第二光敏电阻层被设置在第一透明电极和第二透明电极之间。
通过将每个电极与其自己的独立的光敏电阻材料层关联,从而增强了器件的性能。
应当注意的是,本发明可应用于包括紫外光和红外光在内的任何高强度光源。
所述电压依赖性偏振调制器优选地包括形成在液晶层内的扭曲向列层。这可以通过单向地摩擦与液晶层的两个主要面相邻的聚合物涂层的操作来形成。局部的液晶取向由相邻的聚合物层的摩擦方向来确定,所以,例如,如果摩擦方向是正交的,则在液晶层的整个厚度建立90度螺旋液晶结构。
通过用位于液晶层两面的两层PR取代单个PR层,可以增加场引起的(induced)液晶层再取向,从而可以改进器件的性能。实际上,液晶层至少需要10微米厚,然而,扭曲向列的螺旋结构的破坏(breakdown)可能会渗入液晶大约1-3微米,该破坏是由落到光敏电阻上的高强度光生成的电场强度增加而造成的。因此,通过将液晶层设置在两个光敏电阻层之间,更大比例的液晶层厚度对该效果做出贡献。因此,增强了性能。
所述光敏电阻层可以包括铋硅氧化物(BSO)或者具有良好光电导特性和高的暗电导率(没有光时的电导率)的任何其他合适的材料。
通过利用掺杂钒的碳化硅(V-SiC)作为光敏电阻层,可以实现宽带保护的额外优点。在光敏电阻层是非活性的(例如V-SiC)情况下,偏振器能够十字交叉,以提供针对眩耀的宽带保护。如果使用活性光敏电阻(诸如BSO),则根据需要被去除的入射波长来调节偏振器的角度。在OALV器件中使用V-SiC的优点在申请人的编号为GB0912241.7的共同待决英国优先权专利申请中被更充分地描述了,该专利申请的内容通过引用合并于此。
透明电极可以包括作为涂层而施加到光敏电阻材料的外表面的铟锡氧化物(ITO)。
另选地,所述第一透明电极和第二透明电极方便地包括涂有铟锡氧化物(ITO)的玻璃板,虽然等同的结构在本领域中是已知的。
通过将根据本发明的OALV大致设置在光学系统或成像器件的焦平面处,高强度入射光被聚焦到一点。因此,该器件将仅阻挡眩耀的聚焦点,而允许用户清楚地观察图像的其余部分。
附图说明
为了使得本发明可以被更充分的理解,现在将参考附图来描述本发明的实施方式,在附图中:
图1例示标准OALV设计;
图2例示用于偏振调制器的扭曲向列层的螺旋结构;
图3示出BSOOALV的非线性响应;
图4例示根据本发明的OALV(偏振器未示出);
图5示出根据本发明的双PROALV的非线性光学响应;以及
图6示出单PROALV和双PROALV的光密度(OD)的对比。
具体实施方式
图1例示标准OALV设计1。两个玻璃板涂有透明铟锡氧化物(ITO),以提供玻璃电极2。光敏电阻3被连接到液晶层4,设置间隔件5以形成间隙,在该间隙中通过毛细作用(capillaryaction)填充液晶。玻璃电极2被电连接到电压6和地7。这些电连接6和7允许正弦波或方波电压跨过玻璃电极2被施加。这些玻璃电极2被旋转涂有聚合物层,并被单向地摩擦,以使局部液晶层4的取向由摩擦方向来确定。通过以两个摩擦方向正交的方式构造该器件,在液晶层4内建立了90度螺旋结构。这即是通常所说的扭曲向列。扭曲向列层是电压依赖性偏振调制器。
图2例示在OALV组件11中被设置在十字交叉的偏振器13、18之间的扭曲向列层16的效应。低强度光12通过输入线偏振器13进入该OALV组件11。低强度光12穿过涂有ITO的玻璃电极14传播。随着光传播通过扭曲向列层16,光的偏振方向也沿着扭曲向列螺旋而旋转。扭曲向列层16的总扭曲角度是90度。因此,由于总扭曲角度与十字交叉的偏振器13、18之间的角度匹配,因此低强度光19通过输出线偏振器18被透射。如果高强度光入射到该器件上,则光电导造成PR15的电阻率的局部下降并造成液晶层内电场强度的关联增加。该电场造成扭曲向列层16的螺旋结构的破坏,关闭其扭曲效应。因此,这种高强度光不会像低强度光那样被旋转,从而被输出线偏振器18吸收。
由于OALV是非线性光学器件,因此其函数可以通过功率扫描测量(powerscanmeasurement)来表征,在功率扫描测量中,当输入能量变化时,测量器件的透射能量。线性器件(诸如玻璃板或者吸收滤波器)将总是透射入射光的某些固定部分,以使输出能量是输入能量的线性函数,然而,非线性器件的透射率将随着输入能量发生变化。图3示出标准BSOOALV的非线性响应与线性器件的响应的对比。与线性响应的偏差例示了BSOOALV作为光学开关的效能。在图3中,PR和偏振器中的吸收效应已经被去除。
申请人已经成功地构建了一种改进的OALV结构,在改进的OALV结构中,单BSOPR已经被位于液晶层两面的两层BSOPR所取代。图4例示了作为组件21的根据本发明的双PROALV(偏振器未示出)。与图1一样,该实施方式包括玻璃电极22、光敏电阻(PR)层23、液晶层24、间隔件25、连接到电压的电连接26和接地的电连接27。在该实施方式中,还有一个附加的光敏电阻层23a。在这种架构中,每一个光敏电阻层与其自己的电极相关联,各电极由方波电压驱动,这样在任一时刻,如果一个电极上的电压是+V,则另一个电极上的电压是-V。由于第二光敏电阻的添加,光与该器件之间交互的数学模型被显著地改变了。
根据如下描述构造该器件。玻璃电极22是涂有铟锡氧化物(ITO)的3.5mm的BK7玻璃板,从IngCrys激光系统有限公司(IngCrysLaserSystemsLtd.)获得。PR层23、23a是两个25×25mm的面被光学抛光的25×25×0.3mmBSO晶片。然后,溶解在甲醇中的聚酰亚胺的对准层被旋转涂到每一个BSO晶片的一个面上。然后,用丝绒布(velourcloth)摩擦这些聚酰亚胺层。BSOPR层23、23a以其非涂敷面与ITO接触的方式被放置到玻璃电极22上,并且玻璃电极22与BSOPR层23、23a之间没有间隙。然后,间隔球25(15微米的玻璃珠)以聚酰亚胺涂敷面与该间隔球25接触的方式被施加到两个BSOPR层23、23a之间。施加到玻璃电极22的该面上的聚酰亚胺涂层的摩擦方向必须是正交的。然后,经由毛细作用在BSOPR层23、23a之间的间隙填充液晶24。一旦填充满,就使用粘胶剂(未示出)围绕边缘密封该器件,并且电导线26和27被焊接到这些ITO表面上。在另选实施方式中,ITO被施加到BSOPR层23和23a的外表面,该ITO被施加到BSO,而不是被施加到玻璃。
图5示出实验性的双BSOPROALV(菱形)的非线性光学响应以及线性响应(虚线)。在图5中,PR和偏振器中的吸收效应已经被去除了。很明显,由于两条线的偏差,DPROALV显然是用作非线性器件的。将两个不同PR设置在液晶层的两面,允许液晶结构在两个表面处的局部微扰(perturbation),因此增加了液晶的总微扰量。该增加的微扰导致器件性能的改进。
在图6中示出了该增加的性能,其中示出了在相同条件下测量的每种类型器件的光密度(OD)。OD被定义为:
较高的OD意味着更多的入射光被阻挡了,因此该器件可以更好地起到光学光阀的作用。虚线示出了针对由单个光敏电阻制成的器件的数据。实线示出了从双光敏电阻器件获得的数据。可以看出,在5-20伏特的电压范围内,DPROALV的OD高于SPROALV的OD。这说明,如果DPR被设置在光学系统或成像器件的焦平面处,则可以实现改进的光学限制性能。
Claims (8)
1.一种用于限制高强度光的透射的光学寻址光阀OALV,所述OALV包括:
输入偏振器和输出偏振器;
电压依赖性偏振调制器,所述电压依赖性偏振调制器夹在第一光敏电阻层和第二光敏电阻层之间,所述第一光敏电阻层和第二光敏电阻层被设置在第一透明电极和第二透明电极之间,其中低强度光被所述输出偏振器透射,并且其中高强度光被所述输出偏振器吸收,
其中所述第一光敏电阻层和第二光敏电阻层位于所述电压依赖性偏振调制器的两面,
其中所述第一透明电极和所述第二透明电极中的每个与其自己的独立的光敏电阻材料层关联。
2.如权利要求1所述的OALV,其中,所述电压依赖性偏振调制器包括形成在液晶层内的90°扭曲向列层。
3.如权利要求1或2所述的OALV,其中,所述光敏电阻层包括铋硅氧化物(BSO)。
4.如权利要求1或2所述的OALV,其中,所述光敏电阻层包括掺杂钒的碳化硅(V-SiC)。
5.如权利要求4所述的OALV,其中,所述输入偏振器和输出偏振器是十字交叉的。
6.如前述权利要求中任一权利要求所述的OALV,其中,所述第一透明电极和第二透明电极包括施加到所述光敏电阻层的外表面的铟锡氧化物(ITO)涂层。
7.如权利要求1至5中任一权利要求所述的OALV,其中,所述第一透明电极和第二透明电极包括涂有铟锡氧化物(ITO)的玻璃板。
8.一种光学系统或成像器件,其包括如前述权利要求中任一权利要求所述的OALV,该OALV被设置在焦平面处或者焦平面附近,以使图像能够形成在所述OALV上。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0912258A GB0912258D0 (en) | 2009-07-15 | 2009-07-15 | Non linear optical device |
GB0912258.1 | 2009-07-15 | ||
GB0916102A GB0916102D0 (en) | 2009-09-15 | 2009-09-15 | Non linear optical device |
GB0916102.7 | 2009-09-15 | ||
PCT/GB2010/001350 WO2011007144A1 (en) | 2009-07-15 | 2010-07-15 | Optically addressed light valve comprising two photoconducting layers placed on each side of an electro-optical modulator |
Publications (2)
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CN102483548A CN102483548A (zh) | 2012-05-30 |
CN102483548B true CN102483548B (zh) | 2015-12-16 |
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CN201080031962.3A Expired - Fee Related CN102483548B (zh) | 2009-07-15 | 2010-07-15 | 包括光电调制器的每一面上的两个光电导层的光学寻址光阀 |
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US (1) | US8736778B2 (zh) |
EP (1) | EP2454630B1 (zh) |
JP (1) | JP5797647B2 (zh) |
KR (1) | KR20120039011A (zh) |
CN (1) | CN102483548B (zh) |
CA (1) | CA2767845A1 (zh) |
GB (1) | GB2471950B (zh) |
IL (1) | IL217481A0 (zh) |
IN (1) | IN2012DN00372A (zh) |
WO (1) | WO2011007144A1 (zh) |
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CN102483547A (zh) | 2009-07-15 | 2012-05-30 | 英国国防部 | 光学寻址光阀 |
CA2767845A1 (en) | 2009-07-15 | 2011-01-20 | Christopher David Burgess | Optically addressed light valve comprising two photoconducting layers placed on each side of an electro-optical modulator |
CN106211760B (zh) | 2014-02-28 | 2018-05-11 | 3M创新有限公司 | 包括条带和股线的聚合物结网的过滤介质 |
US10353210B2 (en) | 2016-10-18 | 2019-07-16 | Qualcomm Incorporated | Self-aligning travelling collimating lens for sweeping laser |
WO2022094094A1 (en) * | 2020-10-29 | 2022-05-05 | Seurat Technologies, Inc. | Large area arrayed light valves |
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US4726660A (en) | 1986-05-16 | 1988-02-23 | The United States Of America As Represented By The United States Department Of Energy | Technique for compressing light intensity ranges utilizing a specifically designed liquid crystal notch filter |
USH737H (en) * | 1988-08-18 | 1990-02-06 | The United States Of America As Represented By The United States Department Of Energy | Light intensity compressor |
JPH05257160A (ja) * | 1992-03-11 | 1993-10-08 | Sharp Corp | 光透過量調整装置 |
JP3133639B2 (ja) * | 1995-03-27 | 2001-02-13 | 昭和シェル石油株式会社 | 液晶駆動方法 |
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CN102483547A (zh) | 2009-07-15 | 2012-05-30 | 英国国防部 | 光学寻址光阀 |
CA2767845A1 (en) | 2009-07-15 | 2011-01-20 | Christopher David Burgess | Optically addressed light valve comprising two photoconducting layers placed on each side of an electro-optical modulator |
-
2010
- 2010-07-15 CA CA2767845A patent/CA2767845A1/en not_active Abandoned
- 2010-07-15 JP JP2012520091A patent/JP5797647B2/ja not_active Expired - Fee Related
- 2010-07-15 WO PCT/GB2010/001350 patent/WO2011007144A1/en active Application Filing
- 2010-07-15 CN CN201080031962.3A patent/CN102483548B/zh not_active Expired - Fee Related
- 2010-07-15 GB GB1011880.0A patent/GB2471950B/en not_active Expired - Fee Related
- 2010-07-15 US US13/383,213 patent/US8736778B2/en not_active Expired - Fee Related
- 2010-07-15 KR KR1020127003717A patent/KR20120039011A/ko not_active Application Discontinuation
- 2010-07-15 EP EP10740693.6A patent/EP2454630B1/en not_active Not-in-force
-
2012
- 2012-01-11 IL IL217481A patent/IL217481A0/en unknown
- 2012-01-13 IN IN372DEN2012 patent/IN2012DN00372A/en unknown
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GB2230346A (en) * | 1989-04-06 | 1990-10-17 | Marconi Gec Ltd | Optical instrument |
FR2660447A1 (fr) * | 1990-03-28 | 1991-10-04 | Scanera Ste Civile Rech | Dispositif optique de traitement non lineaire de rayonnements et d'images. |
US5227902A (en) * | 1990-05-16 | 1993-07-13 | Victor Company Of Japan, Ltd. | Spatial light modulator with a photoconductor on each side of a light modulation layer |
WO2005116719A2 (en) * | 2004-05-24 | 2005-12-08 | Steridian Corporation | Transmissive, optically addressed, photosensitive spatial light modulators and color display systems incorporating same |
Also Published As
Publication number | Publication date |
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GB2471950A (en) | 2011-01-19 |
WO2011007144A1 (en) | 2011-01-20 |
EP2454630A1 (en) | 2012-05-23 |
KR20120039011A (ko) | 2012-04-24 |
CN102483548A (zh) | 2012-05-30 |
JP2012533098A (ja) | 2012-12-20 |
GB201011880D0 (en) | 2010-09-01 |
US20120105773A1 (en) | 2012-05-03 |
CA2767845A1 (en) | 2011-01-20 |
EP2454630B1 (en) | 2014-09-17 |
JP5797647B2 (ja) | 2015-10-21 |
IN2012DN00372A (zh) | 2015-08-21 |
GB2471950B (en) | 2012-04-04 |
IL217481A0 (en) | 2012-02-29 |
US8736778B2 (en) | 2014-05-27 |
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