CN102473717A - 发射辐射的半导体器件 - Google Patents

发射辐射的半导体器件 Download PDF

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Publication number
CN102473717A
CN102473717A CN2010800356637A CN201080035663A CN102473717A CN 102473717 A CN102473717 A CN 102473717A CN 2010800356637 A CN2010800356637 A CN 2010800356637A CN 201080035663 A CN201080035663 A CN 201080035663A CN 102473717 A CN102473717 A CN 102473717A
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CN
China
Prior art keywords
radiation
light
emitting
diode chip
emitting diode
Prior art date
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Pending
Application number
CN2010800356637A
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English (en)
Chinese (zh)
Inventor
诺温·文马尔姆
拉尔夫·维尔特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
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Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN102473717A publication Critical patent/CN102473717A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
CN2010800356637A 2009-08-12 2010-08-05 发射辐射的半导体器件 Pending CN102473717A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009037186A DE102009037186A1 (de) 2009-08-12 2009-08-12 Strahlungsemittierendes Halbleiterbauteil
DE102009037186.9 2009-08-12
PCT/EP2010/061446 WO2011018411A1 (de) 2009-08-12 2010-08-05 Strahlungsemittierendes halbleiterbauteil

Publications (1)

Publication Number Publication Date
CN102473717A true CN102473717A (zh) 2012-05-23

Family

ID=43037643

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800356637A Pending CN102473717A (zh) 2009-08-12 2010-08-05 发射辐射的半导体器件

Country Status (7)

Country Link
US (1) US9012926B2 (https=)
EP (1) EP2465139A1 (https=)
JP (1) JP2013502062A (https=)
KR (1) KR20120040741A (https=)
CN (1) CN102473717A (https=)
DE (1) DE102009037186A1 (https=)
WO (1) WO2011018411A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105723531A (zh) * 2014-01-29 2016-06-29 夏普株式会社 发光装置
CN107408615A (zh) * 2015-03-13 2017-11-28 夏普株式会社 发光装置
CN109937480A (zh) * 2016-11-18 2019-06-25 奥斯兰姆奥普托半导体有限责任公司 多像素led部件和用于运行多像素led部件的方法
CN110168754A (zh) * 2017-02-08 2019-08-23 首尔半导体株式会社 发光二极管和包括该发光二极管的发光模块
CN110707189A (zh) * 2017-02-08 2020-01-17 首尔半导体株式会社 发光模块

Families Citing this family (23)

* Cited by examiner, † Cited by third party
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DE102009047788A1 (de) * 2009-09-30 2011-03-31 Osram Opto Semiconductors Gmbh Beleuchtungseinrichtung für eine Kamera sowie Verfahren zum Betrieb derselben
DE102011015821B4 (de) * 2011-04-01 2023-04-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
US8492182B2 (en) 2011-04-29 2013-07-23 Osram Opto Semiconductors Gmbh Method for the producing of a light-emitting semiconductor chip, method for the production of a conversion die and light-emitting semiconductor chip
US12002915B2 (en) * 2011-06-24 2024-06-04 Creeled, Inc. Multi-segment monolithic LED chip
US9299742B2 (en) * 2011-08-15 2016-03-29 Micron Technology, Inc. High-voltage solid-state transducers and associated systems and methods
DE102012101393A1 (de) * 2012-02-21 2013-08-22 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
DE102012202927B4 (de) 2012-02-27 2021-06-10 Osram Gmbh Lichtquelle mit led-chip und leuchtstoffschicht
DE102012202928A1 (de) * 2012-02-27 2013-08-29 Osram Gmbh Lichtquelle mit led-chip und leuchtstoffschicht
DE102012101892B4 (de) * 2012-03-06 2021-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Wellenlängenkonversionselement, Licht emittierendes Halbleiterbauelement und Anzeigevorrichtung damit sowie Verfahren zur Herstellung eines Wellenlängenkonversionselements
DE102012102301B4 (de) * 2012-03-19 2021-06-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Scheinwerfer mit einem solchen Halbleiterchip
DE102012112149A1 (de) * 2012-12-12 2014-06-26 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE102012112530A1 (de) * 2012-12-18 2014-06-18 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
JP6230631B2 (ja) * 2014-01-29 2017-11-15 シャープ株式会社 発光装置
CN106465510B (zh) * 2014-03-20 2019-10-01 东芝高新材料公司 发光装置以及led灯泡
TWI568026B (zh) * 2014-11-04 2017-01-21 錼創科技股份有限公司 發光裝置
DE102015103055A1 (de) 2014-12-04 2016-06-09 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
KR20170135585A (ko) * 2016-05-31 2017-12-08 엘지디스플레이 주식회사 뱅크 절연막을 포함하는 유기 발광 표시 장치
DE102016224090B4 (de) * 2016-12-05 2024-03-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement, Modul mit mindestens zwei optoelektronischen Bauelementen und Verfahren zum Herstellen eines optoelektronischen Bauelements
DE102017106776A1 (de) 2017-01-30 2018-08-02 Osram Opto Semiconductors Gmbh Halbleiterbauelement mit Halbleiterchip
CN110800117A (zh) * 2017-07-03 2020-02-14 夏普株式会社 光源装置及发光装置
DE102018111021A1 (de) 2017-12-14 2019-06-19 Osram Opto Semiconductors Gmbh Lichtemittierendes halbleiterbauteil und verfahren zur herstellung eines licht emittierenden halbleiterbauteils
US11054112B2 (en) * 2017-12-22 2021-07-06 Lumileds Llc Ceramic phosphor with lateral light barriers
EP3614437B1 (en) * 2018-08-22 2021-05-05 Lumileds LLC Semiconductor die

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US6603146B1 (en) * 1999-10-07 2003-08-05 Sharp Kabushiki Kaisha Gallium nitride group compound semiconductor light-emitting device
CN101268554A (zh) * 2005-09-19 2008-09-17 皇家飞利浦电子股份有限公司 可变色发光器件及其控制方法
WO2009019836A2 (en) * 2007-08-03 2009-02-12 Panasonic Corporation Light-emitting device

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TW383508B (en) * 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
JPH10261818A (ja) 1997-03-19 1998-09-29 Fujitsu Ltd 発光半導体装置
WO2005120135A1 (en) 2004-06-04 2005-12-15 Philips Intellectual Property & Standards Gmbh Electroluminescent structure and led with an el structure
JP2007294878A (ja) 2006-03-31 2007-11-08 Fujifilm Corp 半導体層とその成膜方法、半導体発光素子、及び半導体発光装置
JP2007287842A (ja) * 2006-04-14 2007-11-01 Ricoh Co Ltd 半導体装置
US7714348B2 (en) * 2006-10-06 2010-05-11 Ac-Led Lighting, L.L.C. AC/DC light emitting diodes with integrated protection mechanism
DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
US7968902B2 (en) * 2008-03-31 2011-06-28 Bridgelux, Inc. Light emitting devices with constant forward voltage

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US6603146B1 (en) * 1999-10-07 2003-08-05 Sharp Kabushiki Kaisha Gallium nitride group compound semiconductor light-emitting device
CN101268554A (zh) * 2005-09-19 2008-09-17 皇家飞利浦电子股份有限公司 可变色发光器件及其控制方法
WO2009019836A2 (en) * 2007-08-03 2009-02-12 Panasonic Corporation Light-emitting device

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105723531A (zh) * 2014-01-29 2016-06-29 夏普株式会社 发光装置
CN105723531B (zh) * 2014-01-29 2019-02-19 夏普株式会社 发光装置
CN107408615A (zh) * 2015-03-13 2017-11-28 夏普株式会社 发光装置
CN109937480A (zh) * 2016-11-18 2019-06-25 奥斯兰姆奥普托半导体有限责任公司 多像素led部件和用于运行多像素led部件的方法
CN109937480B (zh) * 2016-11-18 2023-07-18 奥斯兰姆奥普托半导体有限责任公司 多像素led部件和用于运行多像素led部件的方法
CN113193086A (zh) * 2017-02-08 2021-07-30 首尔半导体株式会社 发光器件
CN110707189A (zh) * 2017-02-08 2020-01-17 首尔半导体株式会社 发光模块
CN113206177A (zh) * 2017-02-08 2021-08-03 首尔半导体株式会社 发光器件
CN110168754A (zh) * 2017-02-08 2019-08-23 首尔半导体株式会社 发光二极管和包括该发光二极管的发光模块
CN110707189B (zh) * 2017-02-08 2023-09-01 首尔半导体株式会社 发光模块
US11804571B2 (en) 2017-02-08 2023-10-31 Seoul Semiconductor Co., Ltd. Light emitting diode and light emitting module comprising the same
CN113193086B (zh) * 2017-02-08 2024-12-06 首尔半导体株式会社 发光器件
CN113206177B (zh) * 2017-02-08 2024-12-06 首尔半导体株式会社 发光器件
US12382750B2 (en) 2017-02-08 2025-08-05 Seoul Semiconductor Co., Ltd. Light emitting diode and light emitting module comprising the same

Also Published As

Publication number Publication date
JP2013502062A (ja) 2013-01-17
US9012926B2 (en) 2015-04-21
WO2011018411A1 (de) 2011-02-17
EP2465139A1 (de) 2012-06-20
US20120193657A1 (en) 2012-08-02
DE102009037186A1 (de) 2011-02-17
KR20120040741A (ko) 2012-04-27

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Application publication date: 20120523