CN102472863A - 具有定位在波导的底表面附近的光源的照明设备 - Google Patents

具有定位在波导的底表面附近的光源的照明设备 Download PDF

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CN102472863A
CN102472863A CN2010800320048A CN201080032004A CN102472863A CN 102472863 A CN102472863 A CN 102472863A CN 2010800320048 A CN2010800320048 A CN 2010800320048A CN 201080032004 A CN201080032004 A CN 201080032004A CN 102472863 A CN102472863 A CN 102472863A
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waveguide
equipment
transparent material
sections
light
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CN102472863B (zh
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S.J.比尔休曾
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Koninklijke Philips NV
Lumileds LLC
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Abstract

根据本发明各实施例的设备包括波导(6),该波导典型地由第一节段的透明材料形成。光源(8)邻近波导的底表面布置。光源包括半导体发光二极管(12)和布置在半导体发光二极管和波导之间的第二节段的透明材料。该第二节段的透明材料的侧壁(18)是反射的。待照射表面邻近波导的顶表面布置。在一些实施例中,波导的边缘是弯曲的。

Description

具有定位在波导的底表面附近的光源的照明设备
技术领域
本发明涉及包括半导体发光二极管的照明设备。
背景技术
诸如发光二极管(LED)的半导体发光设备属于目前可获得的最高效的光源。在制造能够跨过可见光谱操作的高亮度LED中当前感兴趣的材料系统包括III-V族半导体,特别是镓、铝、铟和氮的二元、三元和四元合金,也称为III族氮化物材料;以及镓、铝、铟、砷和磷的二元、三元和四元合金。通过金属有机物化学气相沉积(MOCVD)、分子束外延(MBE)或者其它外延技术,III族氮化物设备经常外延生长在蓝宝石、碳化硅或III族氮化物衬底上,并且III族磷化物设备外延生长在砷化镓上。通常,n型区域沉积在衬底上,随后发光区域或有源区域沉积在n型区域上,随后p型区域沉积在有源区域上。各层的顺序可以倒过来,使得p型区域毗邻衬底。
半导体发光设备的一种有希望的用途是用于通用照明和显示设备(诸如液晶显示器(LCD))的背光装置。彩色或单色透射LCD通常在蜂窝电话、个人数字助理、便携式音乐播放器、膝上型计算机、桌面型监视器以及电视应用中使用。
在图5中说明如美国专利7,052,152中描述的,其中由各LED提供光的背光装置的一个示例。LED 43的阵列安置在背光装置45的后面板上。背光装置45的背平面48和侧壁46用高反射材料覆盖。颜色转换磷光体层47布置在背光装置45的盖板40上。LCD面板44安置在背光装置45前方。LCD面板44可以是传统LCD,其具有第一偏振过滤器、用于跨过液晶层的选定区域发展电场的薄膜晶体管阵列、液晶层、RGB滤色器阵列以及第二偏振过滤器。滤色器阵列具有红色、绿色和蓝色子像素。在LCD面板44和背光装置45之间经常使用附加的膜,诸如亮度增强膜(BEF)或偏振恢复膜(DBEF)。
发明内容
本发明的目的是形成一种具有布置在实心透明波导的底表面上的光源的设备。根据本发明各实施例的设备包括波导,该波导典型地由第一节段的透明材料形成。光源邻近波导的底表面布置。光源包括半导体发光二极管以及布置在半导体发光二极管和波导之间的第二节段的透明材料。第二节段的透明材料的侧壁是反射的。待照射表面邻近波导的顶表面布置。在一些实施例中,波导的边缘是弯曲的。
根据本发明各实施例的照明设备可以比传统设备薄,具有充分的照明、混合和均匀性。
附图说明
图1说明根据本发明各实施例的照明系统。
图2和3说明连接到波导的底部的半导体发光设备。
图4为波导的一部分的俯视图。
图5为背光装置和LCD的截面图。
具体实施方式
图5中说明的波导由背板48、侧壁46和盖板40形成,该波导必须是厚的,从而使入射在LCD 44上的光被充分地混合且是均匀的。替代如图5所说明的开放的盒状波导,在本发明各实施例中,使用实心波导。光源毗邻波导的底表面定位。根据本发明各实施例的照明设备可以比图5中说明的设备薄。
图1说明根据本发明各实施例的照明设备。若干光源8耦合到波导6的底表面。波导6可以是例如一个节段的透明材料,该一个节段的透明材料混合由若干光源提供的光。波导6可以是例如丙烯酸树脂(例如PMMA)、硬硅树脂、模压塑料、聚碳酸酯或者任何其它合适材料。来自波导6的光被引导朝向待照射表面。尽管下面的实施例使用液晶显示器(LCD)面板4作为待照射表面的示例,本发明不限于LCD显示器。待照射表面可以是任何表面,在通用照明应用的情况下该表面包括简单透明盖件。
待照射表面可以是传统LCD 4,其具有第一偏振过滤器、用于跨过液晶层的选定区域发展电场的薄膜晶体管阵列、液晶层、RGB滤色器阵列以及第二偏振过滤器。滤色器阵列具有红色、绿色和蓝色子像素。在LCD面板4和波导6之间可以使用附加的公知的膜,诸如亮度增强膜或偏振恢复膜,以及使用漫射器元件以提高均匀性。
图2说明耦合到波导6的底表面的光源8的第一示例。半导体LED,诸如发射蓝光或发射UV的III族氮化物LED 12通过互连14连接到底座10。LED 12可以是例如薄膜倒装芯片设备。
通过首先在诸如蓝宝石、SiC或GaN的生长衬底上生长n型区域、发光区域或有源区域以及p型区域,可以形成薄膜倒装芯片III族氮化物设备。部分的p型区域和发光区域被蚀刻以暴露部分的底下n型区域。金属电极可以是反射的(例如银、铝或合金),该金属电极随后形成于暴露的n和p型区域上。当二极管正向偏置时,发光区域在由III族氮化物有源层的组成确定的波长发射光。形成这种LED是公知的。
半导体LED 12随后安装在底座10上成为倒装芯片。底座10诸如可以是任何合适材料,例如陶瓷、铝或硅。底座10包括金属电极,其经由互连被焊接或超声焊到半导体结构上的金属电极,该互连可以是例如金或焊料。如果电极本身例如可以通过超声焊或任何其它合适结合而连接,互连可以省略。半导体层12和底座10之间的多个金属层,包括半导体上的电极、底座上的电极以及互连,在图2中作为结构14示出。底座10用作机械支持,提供LED芯片上的n和p电极与电源之间的电学接口,并且提供散热。合适的底座是公知的。
为了减小LED的厚度并且防止光被生长衬底吸收,生长衬底通过适合于衬底的方法来移除,诸如蚀刻、化学机械抛光或者激光熔化,在激光熔化中激光加热III族氮化物结构和生长衬底的界面,熔化一部分的III族氮化物结构并且从半导体结构释放衬底。在一个实施例中,在LED阵列安装在底座晶片上之后并且在LED/底座被单一化(例如通过锯切)之前,执行生长衬底的移除。
在生长衬底移除之后,在一些实施例中,剩余的III族氮化物结构被减薄和/或粗糙化或者例如利用光子晶体图案化。光子晶体可以设计成使例如相对于设备顶表面的法向的大角度中的发射最大化。在一些实施例中,光子晶体配置成使得>50%的能量在相对于设备顶表面的法向成>45°的角度发射。设备可以用封装材料覆盖。在一些实施例中,生长衬底仍为设备的一部分。生长衬底可以用反射涂层涂覆,使得大部分光发射到相对于设备顶表面的法向的大角度中。诸如一种或多种磷光体的波长转换材料可以形成于半导体结构之上。
腔体20将LED 12与波导6分离。毗邻LED 12的腔体的侧部18和底部16是反射的。腔体20诸如可以用例如硅树脂的透明材料填充。二向色过滤层22布置在波导6和腔体20之间。二向色过滤层22可以配置成使得由LED 12在小角度发射的蓝色光诸如光线24被反射,而由LED 12在大角度发射的蓝色光诸如光线26被透射。合适的二向色过滤器是公知的,并且可以从例如Ocean Optics, 830 Douglas Ave. Dunedin, FL 34698获得。
通过首先形成安装在底座10上的薄膜倒装芯片LED 12,可以形成图2中说明的设备。随后形成腔体20的反射侧壁18和反射底部16。例如,反射材料(例如TiO2)诸如可以布置在可模压材料(例如硅树脂)中,随后模压在底座10上以形成反射的侧壁18和底部16。可替换地,侧壁18和底部16可以由刚性材料预制,涂覆有反射材料(如果该刚性材料本身不是反射的),随后定位在底座10上。腔体20随后用透明材料填充。二向色过滤层22随后涂覆在腔体20中透明材料之上。
图3说明光源8的第二示例,该光源耦合到波导6的底表面。半导体LED 12可以是如上所述通过互连14连接到底座10的III族氮化物薄膜倒装芯片。如图2中的设备那样,由反射侧壁18形成腔体。不被LED 12占据的腔体的底部16的那个部分形成为反射的。实心透明材料30(诸如玻璃)占据由反射的侧壁18和底部16形成的腔体。二向色过滤层22反射光24并且透射光26,如上所述布置在透明材料30之上。
如上所述,通过首先形成安装在底座10上的薄膜倒装芯片LED 12,可以形成图3中说明的设备。分别地,在形成二向色过滤层22之前或之后,诸如玻璃板的透明材料30涂覆有切片到期望尺寸的二向色过滤层22。例如通过利用透明环氧树脂或硅树脂胶粘,将透明材料30附着到LED 12。通过例如使用诸如银或铝的反射金属、反射涂料、反射涂层、或者诸如布置在例如硅树脂的结合剂中的诸如TiO2的反射材料涂覆透明材料30的侧部和底部,随后形成反射的侧壁18和底部16。在透明材料30附着到LED 12之前,可以使用反射材料涂覆透明材料30的侧部。可以使用真空将结合剂中的反射材料吸引到透明材料30和底座10之间的空间中,或者可以选择结合剂以通过毛细作用带到(wick)透明材料30下方,从而形成反射底部16。在一些实施例中,底座10是反射的。
在一些实施例中,在图2和3说明的设备中,LED 12可具有在所说明的维度中介于几百微米至1或2毫米的横向范围(lateral extent)。用透明材料填充的空间可具有在所说明的维度中介于LED 12的横向范围的例如1.1至2倍的横向范围,以及介于LED 12的横向范围的例如0.5至1.5倍的高度。在一个示例中,LED 12长1mm,底座10长2mm,以及透明材料30长1.5mm且高1mm。
在一些实施例中,波导6的边缘6A被成形以将光引导朝向待照射表面下方的波导的区域,如图4所说明,该图为波导的一部分的俯视图。正方形8说明光源的位置,该光源可以是图2和3中说明的光源。边缘6A包括多个弯曲部分,所述弯曲部分可以用反射材料涂覆或者可以被成形以致使由光源8朝向边缘6A发射的光的全内反射。边缘6A可以是扇贝形的,如图4所说明,或者可以具有另一形状。光被引导朝向显示器的活性观看区域50。对波导6的边缘成形,可以通过将入射在波导边缘上的光引导离开LED而不是往回朝向LED而减小由于LED吸收引起的光损失的数量。对波导6的边缘成形也可以改善活性观看区域50中光的均匀性,可以减小针对给定显示性能所需要的LED的数目,并且可以减小边框高度52,该边框高度为波导的边缘与活性观看区域50的边缘之间的距离。
光源8可以跨过波导6的底部定位在均匀间隔处,仅仅定位在波导6的边缘附近,或者定位在任何其它配置中。在一些实施例中,一些光源发射蓝色光,一些发射绿色光,以及一些发射红色光。红色、绿色和蓝色光在波导6中组合以形成白色光。在一些实施例中,每个光源发射白色光,例如通过对由发射蓝色的LED发射的一些光进行波长转换,使得经波长转换的光和蓝色光组合形成白色光。例如,发射黄色的磷光体可以与发射蓝色的LED组合形成白色光,或者发射红色的磷光体和发射绿色的磷光体可以与发射蓝色的LED组合以形成白色光。可以添加发射其它颜色的光的附加磷光体或其它波长转换材料以实现期望的色点。磷光体可以直接布置在图2和3的LED 12上,或者布置在二向色过滤层22和透明材料20或30之间,或者布置在二向色过滤层22和波导6之间。在一些实施例中,一种或多种远程磷光体可以布置在显示器的活性观看区域50中的波导6之上,如图4中所说明。
在光由若干光源提供的如上所述照明系统中,通过该设计是否提供光的充分的照明、混合以及均匀性可以测量性能。与不结合所述实施例的各特征的照明系统相比,本发明各实施例可以利用更少的光源提供充分的照明、混合以及均匀性。在一些应用中,诸如用于显示器的背光装置,期望最小化照明系统的厚度。与不结合所述实施例的各特征的照明系统相比,本发明各实施例可以在更薄照明系统中提供相同性能。
已经详细描述本发明,本领域技术人员将理解,可以鉴于当前公开内容对本发明进行调整而不背离此处描述的发明构思的精神。因此,不打算将本发明的范围限制于所说明和描述的特定实施例。

Claims (15)

1. 一种设备,包括:
波导,其包括第一节段的透明材料;
光源,其邻近该波导的底表面布置,该光源包括:
       半导体发光二极管;以及
       第二节段的透明材料,其布置在该半导体发光二极管和该波导之间;
       其中该第二节段的透明材料的侧壁是反射的;以及
待照射表面,其邻近该波导的顶表面。
2. 权利要求1的设备,其中反射材料布置在该第二节段的透明材料的侧壁上。
3. 权利要求2的设备,其中该反射材料包括布置在透明结合剂材料中的TiO2
4. 权利要求1的设备,其中:
该半导体发光二极管与该第二节段的透明材料的底部的第一部分对齐;以及
毗邻该第一部分的该第二节段的透明材料的底部的第二部分是反射的。
5. 权利要求4的设备,其中反射材料布置在该第二节段的透明材料的底部的第二部分上。
6. 权利要求1的设备,其中该第二节段的透明材料为玻璃和硅树脂其中之一。
7. 权利要求1的设备,其中该第二节段的透明材料布置在腔体中。
8. 权利要求1的设备,其中该波导的边缘被成形以将光引导朝向位于待照射表面下方的该波导的一部分。
9. 权利要求1的设备,其中该波导的边缘是弯曲的。
10. 权利要求1的设备,其中该波导的边缘被成形以致使入射在该边缘上的光的全内反射。
11. 权利要求1的设备,还包括二向色过滤器,其布置在该波导和该第二节段的透明材料之间。
12. 权利要求1的设备,还包括波长转换材料,其布置在该待照射表面和该半导体发光二极管之间。
13. 权利要求1的设备,其中该第二节段的透明材料的长度大于该半导体发光二极管的长度。
14. 权利要求1的设备,其中该半导体发光二极管包括光子晶体,该光子晶体配置成使得由该半导体发光二极管发射的能量的>50%在相对于该半导体发光二极管的顶表面的法向成>45°的角度发射。
15. 权利要求1的设备,其中该半导体发光二极管包括:
蓝宝石生长衬底;以及
反射涂层,其布置在该蓝宝石生长衬底上。
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KR101898828B1 (ko) 2018-09-13
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US9322973B2 (en) 2016-04-26
CN102472863B (zh) 2015-09-09
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