CN102470472A - 无铅高温化合物 - Google Patents

无铅高温化合物 Download PDF

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Publication number
CN102470472A
CN102470472A CN2010800329907A CN201080032990A CN102470472A CN 102470472 A CN102470472 A CN 102470472A CN 2010800329907 A CN2010800329907 A CN 2010800329907A CN 201080032990 A CN201080032990 A CN 201080032990A CN 102470472 A CN102470472 A CN 102470472A
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China
Prior art keywords
substrate
tin
weight
particle
soldering paste
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CN2010800329907A
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CN102470472B (zh
Inventor
F.布里尔
W.施密特
J.特罗德勒
K-H.沙勒
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Heraeus Deutschland GmbH and Co KG
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Heraeus Materials Technology GmbH and Co KG
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B23K35/025—Pastes, creams, slurries
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract

本发明涉及用于电子部件与基板的材料锁合连接的方法，此方法包括a)提供具有要连接的第一表面的电子部件和具有要连接的第二表面的基板，b)将焊膏施加到至少一个所述要连接的表面上，c)布置该电子部件和基板以使要连接的第一电子部件表面和要连接的第二基板表面通过焊膏接触，和d)焊接来自c)的布置以产生电子部件与基板之间的材料锁合连接，其特征在于，该焊膏含有（i）10-30重量%铜粒子，（ii）60-80重量%至少一种选自锡和锡-铜合金的材料的粒子，和（iii）3-30重量%助焊剂，其中该铜粒子和至少一种选自锡和锡-铜合金的材料的粒子的平均粒径不大于15微米，且其中所施加的焊膏层的厚度为至少20微米。

Description

无铅高温化合物
本发明涉及电子部件与基板的材料锁合连接（stoffschlüssig verbunden）的方法、所述方法中所用的焊膏和可以在所述方法中获得的布置（Anordnung）。
源自微电子领域的部件通常暴露在以不断的周期性温度变化为特征的环境下。这特别适用于通常通过焊接方法与相应基板以形成接触层的方式材料锁合连接的微芯片。与此相应，对所用产品的品质而言至关重要的是所述接触层对热疲劳具有足够稳定性。
因此，常规使用具有大于85重量%的高铅含量的焊膏连接芯片和基板。所述铅基焊膏赋予芯片与基板的连接在以不断的周期性温度变化为特征的环境中对热疲劳充足的稳定性。
根据欧盟指令2002/95/EC，从2006年7月1日起不允许继续销售含有铅或其它危害健康的物质的电气和电子器件。其结果导致为各种电气和电子用途开发无铅焊膏。但是，用于高温领域的焊料是所述指令的一个例外。缺乏替代品，铅的使用在此领域中仍允许，至少直至可供应相当的无铅替代品。与此相应的目标是开发具有不含含铅接触层的芯片和基板的布置。
迄今已用作芯片与基板的材料锁合连接的一种备选方案的无铅焊膏是除焊剂外通常还含有具有金属合金粒子的粉末的易熔焊膏，该金属合金主要由锡、银和/或铜构成，其中粒子的平均粒径为25-45微米或更大。
研究已表明，使用所述焊膏生成的接触层不仅由焊料接缝构成，而是此外也含有耐高温的金属化合物，所谓的金属间相。在此，焊料接缝的金属间相和共晶相相互间和与要连接的芯片和基板的表面基本平行延伸并由此形成夹心结构。由于所述夹心结构的不同相具有不同的热膨胀系数，所述接触部位仅表现出有限的热和机械负荷能力。
此外，已尝试通过扩散焊接产生芯片与基板之间的材料锁合连接。由此在低温下熔融的焊料和在高温下熔融的金属形成耐高温和机械稳定的金属间相。焊料在此过程中完全转化成金属间相。
DE 10 2007 010 242例如公开了通过扩散焊接在基板上固定芯片的方法。为此，根据DE 10 2007 010 242，最初将几微米厚的固体焊料层通过溅射和电镀施加到要连接的金属表面上，这需要两个热步骤施加固体焊料储备。通过随后的扩散焊接在芯片与基板之间生成仅含金属间相的接触层。与通过熔融焊接制成的相同厚度的接触部位相比，由此生成的接触强度提高。但是另一方面，希望提高接触层的厚度以此来实现强度的进一步提高。
因此，本发明的目的是提供简单的方法用以材料锁合连接电子部件与基板，其无需使用含铅焊膏并产生具有在以不断的周期性温度变化为特征的环境中足够高的耐热疲劳性并具有高的热导率和电导率的接触层。
通过电子部件与基板的材料锁合连接方法实现所述目的，包括
a) 准备具有要连接的电子部件的第一表面和具有要连接的基板的第二表面；
b) 将焊膏施加到至少一个所述要连接的表面上；             
c) 这样布置该电子部件和基板以使要连接的第一电子部件表面和要连接的第二基板表面通过焊膏接触；和
d) 焊接来自c)的布置以产生电子部件与基板之间的材料锁合连接，其中该焊膏含有（i）10 - 30重量%铜粒子，（ii）60 - 80重量%至少一种选自锡和锡-铜合金的材料的粒子，和（iii）3 - 30重量%助焊剂，其中铜粒子和由选自锡和锡-铜合金的材料的粒子的平均粒径不大于15微米，并且其中所施加的焊膏的厚度为至少20微米。
因此，该方法使用焊膏，其含有
（i）10 - 30重量%铜粒子，
（ii）60 - 80重量%至少一种选自锡和锡-铜合金的材料的粒子，和
（iii）3 - 30重量%助焊剂，
其中铜粒子和至少一种选自锡和锡-铜合金的材料的粒子的平均粒径不大于15微米。
相应地，本发明的范围要求提供包含电子部件、基板和以材料锁合连接电子部件与基板的中间接触层的布置，其中该接触层包含共晶相部分和金属间相部分，其中该共晶相部分为共晶相和金属间相的总重量的5 - 50重量%。
根据本发明的方法基于令人惊讶的发现，即在焊接基板、电子部件和置于中间的根据本发明的焊膏的布置焊接时，焊接材料最初热固化，这导致基板和电子部件通过所形成的并最初由共晶相构成的中间接触层连接。紧接着，所形成的中间接触层在形成金属间相的情况下实现等温固化。在该方法中，共晶相中混杂着金属间相，其中金属间相与其余接触层之间形成的相界不相互平行和不与电子部件和基板的表面平行延伸，而是形成具有共晶相部分和金属间相部分的接触层，其中共晶相部分为共晶相和金属间相的总重量的5 - 50重量%。
通过这样形成的接触层，相较于通过扩散焊接生成的仅含金属间相的薄接触层（仅几微米厚）和通过熔融焊接生成的包含与要连接的表面基本平行延伸的共晶和金属间相并主要含有共晶相的接触层，获得显著的强度提高。因此，也可以解决随具有表面粗糙度的要连接的物体、扩散焊接中焊料的有限施加和翘曲（焊接时表面翘曲）而来的问题，以此获得基板与电子部件之间的更稳定连接。
因此，可以根据本发明生成具有对于通过扩散焊接形成的接触层典型的耐高温性且同时不降低热导率和电导率的接触层。
已经发现，对于焊膏，选择充足的施加厚度对所述稳定接触层的形成是重要的。如果施加层的厚度仅为几微米，则焊接时立刻形成金属间相，其中阻止随后与共晶相混杂。这样无法实现如根据本发明预定的强度提高。
此外，已经表明，只有添加一定量的一定尺寸的铜粒子，才将实现所希望的强度提高。不必被理论约束，源自所述铜粒子的铜仿佛在冷却至焊料液相线温度以下时扩散到形成的中间共晶相中形成混杂共晶相的金属间相。
在本发明的范围内，术语电子部件被理解为电路的部件。电子部件可以例如是芯片，优选裸芯片（无外壳的半导体芯片）、半导体二极管、晶体管、电阻或电容。
在本发明的范围内，术语基板被理解为用以连接电子部件的物体。该基板可以例如是印刷电路板、直接敷铜板（DBC或DCB）或引线框架。
术语印刷电路板在本文中用作印刷电路卡、印制电路板或印刷电路的同义词并描述电子部件的载体。印刷电路板由导电化合物（印制导线）粘附于其上的电绝缘材料构成。纤维增强的塑料例如可用作电绝缘材料。
直接敷铜板指陶瓷板（例如由氧化铝、氮化铝或氧化铍），其中通过高温氧化过程一个表面或相互平行的具有最大面积的两个表面与铜结合。在所选条件下，形成既与铜又与基板的氧化物相连的铜与氧的共晶体。
引线框架理解为基本仅由芯片载体和连接线构成的IC（集成电路、微芯片）外壳。术语引线框架在本文中用作术语接线框架和芯片载体的同义词。芯片载体包含构成其框架并由金属，例如铜、铜合金、铜与Finisher（例如镍、银或金）的组合、铁-镍合金或其它因瓦合金制成的基板。
该电子部件包含至少一个第一表面，其旨在用于通过经由焊膏生成的接触层将电子部件连接到基板表面。所述表面也可以是较大表面的一部分。
该基板包含至少一个第二表面，其旨在用于通过经由焊膏生成的接触层将基板连接到上述电子部件的表面。所述表面也可以是较大表面的一部分。
根据本发明，通过经由焊膏生成的接触层连接到基板上的电子部件的表面被称作“要连接的第一表面”，通过经由焊膏生成的接触层连接到电子部件上的基板的表面被称作“要连接的第二表面”。
照惯例，将金属化层至少施加到要连接的第一电子部件表面上。同样，通常将金属化层至少施加到要连接的第二基板表面。照惯例，电子部件和基板都至少在要连接的表面上含有金属化层。因此该电子部件通常在与基板表面上的金属化层相对的表面上包含金属化层，所述金属化层通过接触层相互连接。在本发明的范围内，任选包含在电子部件中的金属化层是电子部件的一部分，任选包含在基板中的金属化层是基板的一部分。
如果存在，金属化层优选占该电子部件的至少一个表面的至少50%，更优选至少70%，再更优选至少90%，最优选至少95%，例如100%的面积。在基板上，金属化层优选占通过接触层连接到电子部件上的表面的至少50%，更优选至少70%，再更优选至少90%，最优选至少95%，例如100%的面积。
该金属化层优选是含有可焊接化合物的层。该金属化层优选含有选自铜、银、金、锡和钯的元素。该金属化层也可以完全由所述元素、所述元素的可焊接化合物或所述元素的混合物或合金构成。
根据本发明，将焊膏施加到要连接的电子部件表面或基板表面的至少之一上。
所述焊膏含有（i）10-30重量%铜粒子、（ii）60 - 80重量%至少一种选自锡和锡-铜合金的材料的粒子和（iii）3-30重量%助焊剂。
该焊膏中所含的铜粒子的铜的纯度优选为至少99.9%（3 N），更优选至少99.99%（4 N）。
该焊膏的铜粒子比例为焊膏重量的10-30重量%，优选 12-28重量%，更优选15-25重量%。
至少一种选自锡和锡-铜合金的物质的粒子的比例为焊膏重量的60-80重量%，优选 62-78重量%，更优选65-75重量%。
如果在该焊膏中含有锡-铜合金的粒子，则锡比例优选为97-99.5重量%，更优选98-99.5重量%，铜比例优选为0.5-3重量%，更优选0.5-2重量%。根据一个特别优选的实施形式，锡-铜合金是包含99.3重量%锡和0.7重量%铜的合金。
根据本发明重要的是，焊膏中所含的粒子必须具有小平均粒径。只有包含具有足够小的平均粒径的粒子的焊膏适合在焊接时首先形成用于连接电子部件和基板的共晶相并随后能使共晶相中混杂着金属间相。
铜粒子的平均粒径和至少一种选自锡或锡-铜合金的材料的粒子的平均粒径彼此独立并且不大于15微米，优选不大于13微米，更优选不大于11微米，再更优选不大于8微米。优选地，平均粒径为2–15微米，更优选2-13微米，再更优选2–11微米，再更优选2–8微米。
在本发明的范围内，平均粒径理解为至少90%的粒子具有在规定范围内的粒径。例如，不大于15微米的平均粒径是指至少90%的粒子具有不大于15微米的粒径且少于10%的粒子具有大于15微米的粒径。2-15微米的平均粒径是指至少90%的粒子具有2-15微米的粒径且少于10%的粒子具有小于2微米或大于15微米的粒径。
根据本发明优选的是，少于1%的粒子超过一定粒径。少于1%的粒子允许超过的粒径优选为15微米，更优选11微米，再更优选 8微米。
根据本发明也优选的是，该焊膏不含粒径大于20微米、大于18微米、大于15微米或大于11微米的粒子。
铜粒子和至少一种选自锡和锡-铜合金的材料的粒子的几何形状可以不同。但是，粒子优选为球形。但是，本领域技术人员显而易见的是，出于生产原因，次要比例的所用粒子可以是非球形的。但是，所存在的粒子的优选至少90重量%，更优选至少95重量%，再更优选至少99重量%或100重量%是球形的。焊膏也优选含有少于5重量%，更优选少于1重量%，再更优选少于0.1重量%，例如0重量%的薄片形粒子。
根据本发明，该焊膏含有3-30重量%，优选5-20重量%，更优选6-15重量%助焊剂。该助焊剂应能在焊接时还原表面（即去氧化）、防止焊接过程之前和之中的重新形成氧化物和减少外来物质的夹杂。此外，通过助焊剂的添加应降低液体焊料的表面张力。助焊剂可以使用例如松香、松香基树脂体系、水基树脂体系或基于羧酸（例如具有2-50个C原子和最多2个芳环的羧酸，如柠檬酸、己二酸、肉桂酸和苯甲酸）、胺（例如具有6-100个C原子的胺，该胺可以优选是叔胺）和溶剂（例如极性溶剂，包括水和多元醇，如二醇或甘油）的体系。
此外，本发明的焊膏可含有其它成分，例如，醇、脂肪酸（例如饱和脂肪酸，如油酸、肉豆蔻酸、棕榈酸、十七酸、硬脂酸或花生酸）、聚硅氧烷化合物或磷化物。
根据本发明使用的焊膏不含铅并因此无铅。在本发明的范围内，无铅理解为该焊膏除由于技术原因可能存在的铅杂质外不含铅。因此，无铅理解为基于焊膏重量小于1重量%，优选小于0.5重量%，更优选小于0.1重量%，再更优选小于0.01重量%，特别是0重量%的铅含量。
根据本发明，电子部件和基板通过焊接材料锁合地相互连接。因此，材料锁合连接是连接对通过原子力或分子力粘合在一起的连接。它们优选是只有破坏粘合剂才能分离的不可分离的连接。
根据本发明，首先形成由基板、电子部件和位于基板与电子部件之间的焊膏层构成的布置。相应地，布置基板和电子部件以使要连接的第一基板表面和要连接的第二电子部件表面通过焊膏接触。通常，焊膏优选接触基板的金属化层（如果存在）和电子部件的金属化层（如果存在）。
优选地，为此首先将焊膏层施加到要连接的基板表面上，优选施加到含有金属化层的基板表面上。可以通过根据现有技术已知的任何方法，例如丝网印刷法、模版印刷法或分散技术进行施加。焊膏不需要覆盖基板的整个表面。更确切地说，焊膏也可以只施加到基板的部分表面，例如所选焊接面上。随后，将电子部件用表面，优选含有金属化层的表面置于施加的焊膏上。
根据本发明，所施加的焊膏层的厚度为至少20微米，更优选至少25微米，和再更优选至少50微米。根据一个优选实施形式，施加层的厚度为20-150微米，更优选30-120微米，特别优选50-100微米。在本发明的范围内，术语施加层的厚度理解为在临焊接之前，要连接的基板和电子部件的表面之间的距离，优选要连接的基板和电子部件的表面的金属化层之间的距离。因此施加层的厚度基本由所用的焊膏量确定。在后继焊接过程中，电子部件与基板之间的距离显著降低，分别根据焊膏的确切组成，其可能降低大约50%。此外，这归因于助焊剂在焊接过程中的蒸发。
最后布置在形成电子部件、基板和中间接触层的布置的情况下焊接电子部件、基板和中间焊膏的布置。根据一般定义，焊接理解为没有达到材料的固相线温度的用于材料的材料锁合连接和涂布的热方法。
为了焊接，优选均匀加热上述布置直至达到实际焊接温度。根据一个优选实施形式，加热以不大于3 ℃/秒的速率进行。
优选地，焊接温度为所用焊料的熔融温度以上大约10-30 ℃，更优选大约15-25 ℃，再更优选18-22 ℃，例如大约20 ℃。根据另一优选实施形式，焊接温度低于260℃，例如在240-250℃范围。
为了焊接，温度在焊膏中所含的焊料的液相线温度以上保持至少15秒，优选至少20秒，再更优选至少30秒。
根据本发明，将该焊接布置冷却至焊膏中所含的焊料的液相线温度以下时，源自铜粒子的铜扩散到已在焊接过程中生成的共晶锡-铜相中。所述扩散过程最终导致金属间相混杂在共晶相中并因此导致已生成的接触强度提高。
为了增强这种作用，可以有利地在焊接过程后对焊接过程中获得的电子部件、基板和中间接触层的布置退火。退火理解为在焊料的液相线温度以下用热处理该布置。
该热处理优选在高于40℃，例如在40-217℃范围内，更优选在100-210℃范围内，再更优选在150-205℃范围内的温度下进行。退火优选进行1分钟至24小时的持续时间，更优选10分钟至10小时，再更优选20分钟至1小时。退火持续时间通常与温度相关联，用于退火的温度越低，该时间越长。
特别有利的是，本发明的方法不需要对由电子部件、基板和中间接触层构成的布置的常规制造方法作出昂贵的修改。特别地，本发明的方法对于传统焊接法使用的机械也没有特殊要求。因此，本发明的方法可以例如在传统条件下和使用任选的现有机械的情况下进行。
根据一个优选实施形式，本发明的布置通过上述方法是可以制造的或用此方法制造。
令人惊讶地，已发现通过上述方法赋予根据本发明制成的电子部件、基板和中间接触层的布置以优异的性质。这样，通过得到的无铅接触层，其将电子部件和基板相互连接，与和具有根据已知方法制成的接触层的布置相比实现了可靠性的提高。
令人惊讶地，这归因于根据本发明制成的接触层是混杂着金属间相的共晶相。
由于该共晶相中混杂着金属间相，阻碍了在共晶相和金属间相之间形成与基板和电子部件的表面平行延伸的长边界区。因此，该接触层不含有不同热膨胀系数的相的空间膨胀限界区，从而可实现强度的提高。
因此，基板、电子部件和中间接触层的本发明的布置能够承受特别在高性能半导体运行时出现的强周期性温度变化。
因此，所述布置包含电子部件、基板和位于电子部件与基板之间的接触层，其中该接触层包含共晶相部分和金属间相部分，其中共晶相部分在共晶相和金属间相总重量的5 - 50重量%的范围内。
接触层中金属间相的所述高比例（其余是共晶相）将这样实现，金属间相不是排列成与要连接的电子部件和基板的表面和与共晶相平行而是与后者混杂。
可以例如通过蚀刻和比重分析方法测定金属间相和共晶相的比例。为此，从该布置中分离出要测试的接触层，研磨并称重以测定共晶相和金属间相的接触层的总重量。随后，将2-硝基苯酚添加到磨碎的接触层中并在50℃下放置1小时。在深蚀刻时，共晶相从磨碎的接触层中溶解出，而金属间相作为不溶的成分留下。随后由磨碎的接触层的蚀刻前重量与金属间相重量的重量差测定共晶相的比例。
在根据本发明的布置中所含的接触层，共晶相和金属间相并非基本相互平行和与要连接的电子部件和基板的表面平行排列。相反，该接触层优选含有被金属间相包围的共晶相。根据一个优选实施形式，该接触层含有完全被金属间相包围的体积为至少1,000立方微米的共晶相体。优选地，接触层中所述共晶相体的比例为至少1体积%，更优选至少3体积%，再更优选至少5体积%。可以通过评价显微照片容易地得到接触层中所述共晶相体的比例。
在本发明的布置中，电子部件和基板之间的距离优选为8–50微米，更优选10–30微米，再更优选12-28微米。所述距离理解为要连接的电子部件和基板的表面之间的距离，其中任选存在的金属化层是电子部件或基板的一部分。因此，所述距离相当于焊接后电子部件与基板之间的接触层的厚度。
根据本发明，可以在上述焊接过程中调节焊接条件，特别是所施加的焊膏层的厚度、温度和时间，以及任选的退火条件，特别是温度和时间，以获得上述接触层。可以通过评价相应的显微照片容易地追踪具有所需性质的接触层的生产。
下面通过下列实施例进一步说明本发明，但这些不能被视为以任何方式或形式限制本发明。
实施例：
实施例1：
制备含有74重量%的平均粒径在5-15微米范围的锡-铜合金（SnCu0.7）粒子、15重量%的平均粒径为最多5微米的铜粒子和11重量%的基于松香的助焊剂体系的焊膏。
该焊膏通过金属模板施加到到带有铜的金属化层的DCB基板上。所施加的焊膏层的厚度为20微米。
随后，使用用于此用途的机器在带有焊膏的DCB基板的表面上装配以具有大约400平方毫米的面积和铜金属化层的裸芯片。为此，将裸芯片这样置于焊膏上，以使裸芯片的金属化层经由焊膏接触DCB基板的金属化层。
随后将DCB基板、裸芯片和中间结合的焊膏的布置置于焊接炉中，以2.5开尔文/秒的速率加热至245 ℃的温度，并且所述温度保持30秒用以焊接。
参比例1：
制备含有87重量%平均粒径为5-15微米的锡-铜合金（SnCu0.7）粒子和13重量%基于松香的助焊剂体系的焊膏。
该焊膏通过金属模板施加到到带有铜金属化层的DCB基板上。所施加的焊膏层的厚度为20微米。随后，使用用于此用途的机器在带有焊膏的DCB基板的表面上装配以具有大约400平方毫米的表面积和铜金属化层的裸芯片。为此，将裸芯片这样置于焊膏上，以使裸芯片的金属化层经由焊膏接触DCB基板的金属化层。
随后将DCB基板、裸芯片和中间结合的焊膏的布置置于焊接炉中，以2.5℃ /秒的速率加热至245 ℃的温度，并且所述温度保持30秒用以焊接。
在根据实施例和参比例制成的布置的各种稳定性实验中，发现根据本发明制成的布置具有比根据参比例制成的布置更高的耐热性。

Claims (7)

1.用于电子部件与基板的材料锁合连接的方法，此方法包括
a) 提供具有要连接的第一表面的电子部件和具有要连接的第二表面的基板，
b) 将焊膏施加到至少一个所述要连接的表面上，
c) 布置该电子部件和基板以使要连接的第一电子部件表面和要连接的第二基板表面通过焊膏接触，和
d) 焊接来自c)的布置以产生电子部件与基板之间的材料锁合连接，
其特征在于，该焊膏含有（i）10 - 30重量%铜粒子，（ii）60 - 80重量%至少一种选自锡和锡-铜合金的材料的粒子，和（iii）3 - 30重量%助焊剂，
其中该铜粒子和至少一种选自锡和锡-铜合金的材料的粒子的平均粒径不大于15微米，且
其中所施加的焊膏层的厚度为至少20微米。
2.根据权利要求1的方法，其特征在于，在另外的步骤e)中在至少40-217℃的温度下对来自d)的布置退火1分钟至24小时的时间。
3.根据权利要求1或2的方法，其特征在于，该基板选自印刷电路板、引线框架和直接敷铜板基板。
4.根据权利要求1-3任一项的方法，其特征在于，该焊膏含有锡-铜合金的粒子，且该锡-铜合金的铜比例为0.3-5重量%。
5.焊膏，其包含
（i）10-30重量%铜粒子，
（ii）60-80重量%至少一种选自锡和锡-铜合金的材料的粒子，和
（iii）3-30重量%助焊剂，
其特征在于，铜粒子和至少一种选自锡和锡-铜合金的材料的粒子的平均粒径不大于15微米。
6.根据权利要求5的焊膏，其特征在于，该焊膏含有锡-铜合金的粒子，且该锡-铜合金的铜比例为0.3 - 5重量%。
7.布置，其包含电子部件、基板和以材料锁合方式连接该电子部件与该基板的中间接触层，其特征在于，该接触层包含共晶相部分和金属间相部分，其中该共晶相部分为共晶相和金属间相的总重量的5 - 50重量%。
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