CN102468123A - Method for epitaxially growing NiSiGe material by utilizing NiAl alloy - Google Patents
Method for epitaxially growing NiSiGe material by utilizing NiAl alloy Download PDFInfo
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- CN102468123A CN102468123A CN2010105326358A CN201010532635A CN102468123A CN 102468123 A CN102468123 A CN 102468123A CN 2010105326358 A CN2010105326358 A CN 2010105326358A CN 201010532635 A CN201010532635 A CN 201010532635A CN 102468123 A CN102468123 A CN 102468123A
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- sige
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- 239000000463 material Substances 0.000 title claims abstract description 50
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 27
- 239000000956 alloy Substances 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 26
- 229910000943 NiAl Inorganic materials 0.000 title claims abstract description 18
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 42
- 238000000137 annealing Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 239000003344 environmental pollutant Substances 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 231100000719 pollutant Toxicity 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000006835 compression Effects 0.000 claims description 3
- 238000007906 compression Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000003595 mist Substances 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910005883 NiSi Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The invention discloses a method for epitaxially growing a NiSiGe material by utilizing a NiAl alloy, which comprises the steps of depositing a layer of NiAl alloy film on the surface of a SiGe layer, and then carrying out an annealing process to react Ni atoms of the NiAl alloy film with the SiGe material of the SiGe layer so as to generate the NiSiGe material. Because of the blocking effect of Al atoms, the NiSiGe layer has a single crystal structure, the interface with the SiGe substrate is very flat and can reach 0.3nm, and the property of the interface can be greatly improved.
Description
Technical field
The present invention relates to a kind of transistorized manufacturing process, relate in particular to the manufacturing approach of transistorized source-drain electrode part in the manufacturing process, belong to technical field of manufacturing semiconductors.
Background technology
The source and drain areas of conventional transistor, directly contact between semiconductor and the metal electrode, contact resistance is very big, and the Schottky barrier of formation is very high, thereby has influenced the performance of device.Ni and the reaction of Si material generate the NiSi silicide and are used as contact material; Thereby can reduce contact resistance and Schottky barrier significantly; Obtained using widely, at the mosfet transistor source and drain areas of manufacturer production such as Intel and AMD, all adopted NiSi at present as contact material.
Along with the progress of semiconductor technology, SiGe is the material that following ideal substitutes Si as a kind of novel high mobility material.Yet, when Ni and SiGe reaction generates silicide, because the existence of Ge atom, be prone to cause the response hierarchy of Ni and Si, Ge atom inconsistent, be not easy to form continuous NiSiGe film.In addition, because the diffusion of Ge, the NiSiGe film electric property of formation is bad, has influenced the application of NiSiGe film as the source drain contact to a great extent.
Given this, the present invention will provide a kind of new NiSiGe generation method, utilize the Al atom in the NiAl alloy to limit the diffusion of Ge atom, thereby form high-quality extension NiSiGe film.
Summary of the invention
The technical problem that the present invention will solve is to provide a kind of method of the NiAl of utilization alloy epitaxial growth NiSiGe material.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of method of utilizing NiAl alloy epitaxial growth NiSiGe material may further comprise the steps:
Step 1, on semiconductor Si substrate the preparation one SiGe layer;
Step 2, the SiGe layer is cleaned, remove its surperficial pollutant and natural oxidizing layer;
Step 3, at SiGe laminar surface deposit layer of Ni Al alloy firm;
Step 4, carry out annealing process, the SiGe material of Ni layer and SiGe layer is reacted, generate the NiSiGe material;
Step 5, utilize selective corrosion, removing not have the Ni that reacts with the SiGe material, obtains being positioned at the extension NiSiGe layer of SiGe laminar surface.
As preferred version of the present invention, in the step 1, described SiGe layer is grown directly upon on the Si substrate, forms the SiGe material layer with compression, also can adopt the resilient coating prepared, is grown to the SiGe material layer of relaxation.
As preferred version of the present invention, the SiGe layer adopts Si
xGe
1-xMaterial, wherein the value of x is 0.1-0.9.
As preferred version of the present invention, the cleaning of step 2 comprises that earlier the SiGe material being carried out RCA cleans, and removes the pollutant on surface, and then the SiGe material is put into HF, removes the natural oxidizing layer on surface.
As preferred version of the present invention, the material of said NiAl alloy firm is Ni
yA
L-y, the value of y is 0.5-0.9, the thickness of alloy firm is 2nm-200nm.
As preferred version of the present invention, in the step 4, the annealing temperature of annealing process is 300-800 ℃, and annealing time is 5s-10m, and the annealing atmosphere is the mist of nitrogen, argon gas or nitrogen and hydrogen.
Beneficial effect of the present invention is:
(1) through adding the Al alloy-layer in the mill, utilize its contained Al atom to stop the Ge atom, guarantee that Ni is consistent with the response hierarchy of Si, Ge atom, be convenient to form continuous, smooth NiSiGe film, can increase substantially the character at interface;
(2) the Al atom has stopped that also the Ge atom diffusion goes in the NiSiGe layer, can improve NiSiGe film electric property, helps the application of NiSiGe film as the source drain contact.
Description of drawings
Fig. 1-3 is a product structure view corresponding in the inventive method implementation process.
Embodiment
Further specify method step of the present invention below in conjunction with accompanying drawing, for the accompanying drawing that makes things convenient for that illustrates is not proportionally drawn.
Embodiment one
As shown in Figure 1, present embodiment is preparation Si earlier
xGe
1-xMaterial layer, Si
xGe
1-xMaterial can be grown and is grown directly upon above the Si, forms the SiGe material with compression, perhaps adopts the method for resilient coating, the SiGe material of growth relaxation, and wherein the value of x selects 0.1 for use.
Si
xGe
1-xAfter the material layer preparation finishes, it is cleaned, cleans and divide two steps:
One) RCA (Radio Corporation of America) that the SiGe material is carried out standard cleans, and removes the pollutant on surface;
Two) the SiGe material is put into HF, remove the natural oxidizing layer on surface.
After cleaning finishes, at the SiGe material surface, the deposit layer of Ni
yAl
1-yAlloy firm, the thickness of film are 2nm, Ni
yAl
1-yThe value of y is 0.5 in the alloy, and is as shown in Figure 2.
Then, carry out annealing process, annealing temperature is 300 ℃, and annealing time is 5s, and the annealing atmosphere is a nitrogen.
The Al atom at first plays the effect on one deck barrier layer in Ni and SiGe reaction, can regulate the speed that Ni and Si, Ge atom react respectively, thereby makes the reaction of Ni and Si, Ge atom reach balance, thereby limits the diffusion of Ge atom; Secondly, the existence of Al can be regulated the lattice constant of NiSiGe, thereby makes NiSiGe layer and SiGe substrate reach good coupling.
After the Al atomic reaction was accomplished, major part was gone to the surface of NiSiGe, formed the oxide of one deck Al, can not influence the character of NiSiGe layer basically.
Utilize selective corrosion, remove the NiAl alloy that does not have with the reaction of SiGe material, just can obtain the NiSiGe layer of extension; As shown in Figure 3; Because it is very smooth that the barrier effect of Al atom, NiSiGe layer have the interface of mono-crystalline structures and SiGe substrate; 0.3nm can be reached, the character at interface can be increased substantially.
Embodiment two
Basic step such as embodiment one, Si
xGe
1-xIn the material layer, the value of x selects 0.9 for use, Ni
yAl
1-yIn the alloy, the value of y is 0.9, and the thickness of alloy firm is 200nm.
When carrying out annealing process, annealing temperature is 800 ℃, and annealing time is 10m, and the annealing atmosphere is an argon gas.
Embodiment three
Basic step such as embodiment one, Si
xGe
1-xIn the material layer, the value of x selects 0.3 for use, Ni
yAl
1-yIn the alloy, the value of y is 0.7, and the thickness of alloy firm is 10nm.
When carrying out annealing process, annealing temperature is 500 ℃, and annealing time is 1m, and the annealing atmosphere is the mist of nitrogen and hydrogen.
Key of the present invention is to have improved traditional contact material layer manufacturing process, becomes possibility thereby make the NiSiGe film be widely used in the source drain contact.
In the present invention, the environmental condition of the thickness of alloy firm, material and annealing process and relevant parameter can be regulated according to the needs of actual conditions, and steps such as annealing of being adopted and selective corrosion all can adopt technology general in the field to carry out.
The other technologies that relate among the present invention belong to the category that those skilled in the art are familiar with, and repeat no more at this.The foregoing description is the unrestricted technical scheme of the present invention in order to explanation only.Any technical scheme that does not break away from spirit and scope of the invention all should be encompassed in the middle of the patent claim of the present invention.
Claims (7)
1. a method of utilizing NiAl alloy epitaxial growth NiSiGe material is characterized in that, may further comprise the steps:
Step 1, on semiconductor Si substrate the preparation one SiGe layer;
Step 2, the SiGe layer is cleaned, remove its surperficial pollutant and natural oxidizing layer;
Step 3, at SiGe laminar surface deposit layer of Ni Al alloy firm;
Step 4, carry out annealing process, the SiGe material of Ni layer and SiGe layer is reacted, generate the NiSiGe material;
Step 5, utilize selective corrosion, removing not have the Ni that reacts with the SiGe material, obtains being positioned at the extension NiSiGe layer of SiGe laminar surface.
2. according to the said a kind of method of utilizing NiAl alloy epitaxial growth NiSiGe material of claim 1, it is characterized in that: in the step 1, described SiGe layer is grown directly upon on the Si substrate, forms the SiGe material layer with compression.
3. according to the said a kind of method of utilizing NiAl alloy epitaxial growth NiSiGe material of claim 1, it is characterized in that: in the step 1, described SiGe layer adopts the resilient coating prepared, is grown to the SiGe material layer of relaxation.
4. according to claim 2 or 3 said a kind of methods of utilizing NiAl alloy epitaxial growth NiSiGe material, it is characterized in that: described SiGe layer adopts Si
xGe
1-xMaterial, wherein the value of x is 0.1-0.9.
5. according to the said a kind of method of utilizing NiAl alloy epitaxial growth NiSiGe material of claim 1; It is characterized in that: the cleaning of step 2 comprises that earlier the SiGe material being carried out RCA cleans; Remove the pollutant on surface, and then the SiGe material is put into HF, remove the natural oxidizing layer on surface.
6. according to the said a kind of method of utilizing NiAl alloy epitaxial growth NiSiGe material of claim 1, it is characterized in that: in the step 3, the material of said NiAl alloy firm is Ni
yAl
1-y, the value of y is 0.5-0.9, the thickness of alloy firm is 2nm-200nm.
7. according to the said a kind of method of utilizing NiAl alloy epitaxial growth NiSiGe material of claim 1; It is characterized in that: in the step 4; The annealing temperature of annealing process is 300-800 ℃, and annealing time is 5s-10m, and the annealing atmosphere is the mist of nitrogen, argon gas or nitrogen and hydrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010532635.8A CN102468123B (en) | 2010-11-04 | 2010-11-04 | Method for growing NiSiGe material by utilizing NiAl alloy epitaxy |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010532635.8A CN102468123B (en) | 2010-11-04 | 2010-11-04 | Method for growing NiSiGe material by utilizing NiAl alloy epitaxy |
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| Publication Number | Publication Date |
|---|---|
| CN102468123A true CN102468123A (en) | 2012-05-23 |
| CN102468123B CN102468123B (en) | 2015-05-13 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103165433A (en) * | 2013-04-01 | 2013-06-19 | 清华大学 | Semiconductor gate structure and forming method thereof |
| CN104409321A (en) * | 2014-10-30 | 2015-03-11 | 上海工程技术大学 | Method utilizing NiTi alloy for epitaxial growth NiSiGe material |
| CN107437562A (en) * | 2016-05-27 | 2017-12-05 | 中芯国际集成电路制造(上海)有限公司 | The forming method of semiconductor devices |
| CN110060920A (en) * | 2018-07-09 | 2019-07-26 | 南方科技大学 | NiGe single crystal film and preparation method and application thereof |
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| US20050224822A1 (en) * | 2003-07-04 | 2005-10-13 | Wen-Huang Liu | Light-emitting diode array having an adhesive layer |
| CN1917218A (en) * | 2005-08-17 | 2007-02-21 | 株式会社神户制钢所 | Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices |
| US20070157965A1 (en) * | 2006-01-06 | 2007-07-12 | Sang-Wook Park | Solar cell and method of manufacturing the same |
| US20090065804A1 (en) * | 2007-09-10 | 2009-03-12 | International Business Machines Corporation | Bipolar transistor with low resistance base contact and method of making the same |
| CN101661906A (en) * | 2008-08-29 | 2010-03-03 | 宜扬科技股份有限公司 | Manufacturing method of nonvolatile storage cell |
| CN101740659A (en) * | 2008-11-06 | 2010-06-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for manufacturing buried-contact solar battery |
-
2010
- 2010-11-04 CN CN201010532635.8A patent/CN102468123B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050224822A1 (en) * | 2003-07-04 | 2005-10-13 | Wen-Huang Liu | Light-emitting diode array having an adhesive layer |
| CN1917218A (en) * | 2005-08-17 | 2007-02-21 | 株式会社神户制钢所 | Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices |
| US20070157965A1 (en) * | 2006-01-06 | 2007-07-12 | Sang-Wook Park | Solar cell and method of manufacturing the same |
| US20090065804A1 (en) * | 2007-09-10 | 2009-03-12 | International Business Machines Corporation | Bipolar transistor with low resistance base contact and method of making the same |
| CN101661906A (en) * | 2008-08-29 | 2010-03-03 | 宜扬科技股份有限公司 | Manufacturing method of nonvolatile storage cell |
| CN101740659A (en) * | 2008-11-06 | 2010-06-16 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for manufacturing buried-contact solar battery |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103165433A (en) * | 2013-04-01 | 2013-06-19 | 清华大学 | Semiconductor gate structure and forming method thereof |
| CN103165433B (en) * | 2013-04-01 | 2015-10-28 | 清华大学 | A kind of semiconductor gate structure and forming method thereof |
| CN104409321A (en) * | 2014-10-30 | 2015-03-11 | 上海工程技术大学 | Method utilizing NiTi alloy for epitaxial growth NiSiGe material |
| CN104409321B (en) * | 2014-10-30 | 2017-05-10 | 上海工程技术大学 | Method utilizing NiTi alloy for epitaxial growth NiSiGe material |
| CN107437562A (en) * | 2016-05-27 | 2017-12-05 | 中芯国际集成电路制造(上海)有限公司 | The forming method of semiconductor devices |
| CN107437562B (en) * | 2016-05-27 | 2020-11-27 | 中芯国际集成电路制造(上海)有限公司 | Method for forming semiconductor device |
| CN110060920A (en) * | 2018-07-09 | 2019-07-26 | 南方科技大学 | NiGe single crystal film and preparation method and application thereof |
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| Publication number | Publication date |
|---|---|
| CN102468123B (en) | 2015-05-13 |
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