CN100570823C - A kind of method of using the necking down extension to obtain the low-dislocation-density epitaxial film - Google Patents
A kind of method of using the necking down extension to obtain the low-dislocation-density epitaxial film Download PDFInfo
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- CN100570823C CN100570823C CNB2007101768564A CN200710176856A CN100570823C CN 100570823 C CN100570823 C CN 100570823C CN B2007101768564 A CNB2007101768564 A CN B2007101768564A CN 200710176856 A CN200710176856 A CN 200710176856A CN 100570823 C CN100570823 C CN 100570823C
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- 238000000034 method Methods 0.000 title claims abstract description 42
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 112
- 239000000758 substrate Substances 0.000 claims abstract description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 51
- 239000010703 silicon Substances 0.000 claims abstract description 51
- 230000003647 oxidation Effects 0.000 claims abstract description 22
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 22
- 238000002360 preparation method Methods 0.000 claims abstract description 13
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 230000008021 deposition Effects 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 118
- 229910052732 germanium Inorganic materials 0.000 claims description 68
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 68
- 239000000377 silicon dioxide Substances 0.000 claims description 59
- 235000012239 silicon dioxide Nutrition 0.000 claims description 59
- 230000012010 growth Effects 0.000 claims description 29
- 239000013078 crystal Substances 0.000 claims description 15
- 230000003746 surface roughness Effects 0.000 claims description 13
- OQNXPQOQCWVVHP-UHFFFAOYSA-N [Si].O=[Ge] Chemical compound [Si].O=[Ge] OQNXPQOQCWVVHP-UHFFFAOYSA-N 0.000 claims description 9
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000034655 secondary growth Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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Abstract
The invention discloses a kind of method of using the necking down extension to obtain the low-dislocation-density epitaxial film that belongs to the semi-conducting material preparing technical field.This method uses the preparation method of deposition, selective epitaxial and thermal oxidation to produce the germanium silicon substrate and the high mobility raceway groove of low-dislocation-density.Can on silicon wafer, obtain the film of utmost point low-dislocation-density, satisfy the requirement of MOS device or luminescent device.The method is generalized in the manufacturing of other dissimilar materialss, can obtain the film of utmost point low-dislocation-density equally on silicon wafer.
Description
Technical field
The invention belongs to the semi-conducting material preparing technical field, particularly a kind of method of using the necking down extension to obtain the low-dislocation-density epitaxial film.
Background technology
Some new materials are used in cmos device or the photoelectric device, can improve the performance of device.For example, germanium, strained silicon or strained Germanium as the novel channel material, can be reduced the effective mass of charge carrier in the raceway groove, and then increase its mobility, be to make MOSFETs adapt to an important directions of the scaled trend of transistor size; The energy gap of germanium is less, is suitable for making photoelectric device.In order to use existing traditional cmos process, various new materials need be produced on the silicon substrate, and this has just brought a series of problems.
For strain silicon channel,, need below raceway groove, use the material different with the lattice constant of silicon in order to realize strain wherein.Commonplace method is to use the germanium silicon virtual substrate of relaxation at present, by regulating the component in the germanium silicon substrate, the strain in the control raceway groove.But, because the lattice constant of germanium and silicon differs 4.2%, on silicon wafer during deposit germanium silicon, there is certain stress between initial double-layer structure, and the thickness of working as germanium silicon surpasses crucial thickness, or after the environment of growth surpassed uniform temperature, stress was released, and the lattice mismatch that exists between germanium silicon and the body silicon can bring coarse surface and high dislocation density to the germanium silicon layer.And on the germanium silicon layer of surface quality difference the strained silicon materials of continued growth, also can have relatively poor surface roughness and dislocation density.Wherein, the former can influence mobility of charge carrier rate in the raceway groove, and the latter then can make the leakage current that existence is bigger in the device or reduce the efficient of photoelectric device, thereby makes this material can not be applied to device.
Similarly, the growth of germanium material because and the existence of lattice mismatch between the silicon, its quality is also difficult with control, uses germanium silicon virtual substrate can improve this situation.So the same with the growth of strain silicon channel, the dislocation density in the relaxation germanium silicon substrate is one of key that obtains measured germanium of matter and strained germanium thin film.
At present, one of method that reduces the dislocation density in the heterostructure is to use the resilient coating of a plurality of content gradually variationals.For example, for the heterostructure of germanium and silicon, introduce the germanium silicon layer that a plurality of Ge contents raise gradually, the component of several germanium silicon layers can be a continually varying, also can be that step changes.This method is proved most dislocation is terminated in the resilient coating, thereby reduces the dislocation density in the film of deposit on the resilient coating largely.The shortcoming of this method is, in order to obtain the low superficial layer film of dislocation density, the thickness requirement of resilient coating is very thick, and the thickness of the resilient coating that deposit Germanium needs on the general silicon is about 10um.Thick like this infrastructure cost is higher, and and traditional cmos process compatible bad.
When another method is to use 900 ℃ of annealing of high temperature, film is carried out cycle annealing, helical dislocation is slided, when helical dislocation slides into the border of film or two dislocation lines and mutually offsets, dislocation in the film promptly is eliminated, longer annealing time, or more cycle-index, can reduce remaining dislocation, yet the best result that has making of report to obtain in this way is good not as the result who uses graded buffer layer, and, the high annealing that multistep is rapid can bring adverse influence for other devices that formed in the integrated circuit.
Therefore, need a kind of new method to obtain the very low heterofilm of dislocation density, simultaneously, its thickness and heat budget are as much as possible little, have to experiment showed, the necking down epitaxy technology of using a step photoetching and a step etching, can on the body silicon substrate, obtain the very low germanium of dislocation density; Similar approach is applied in the growth of other materials, can makes its inner dislocation density very low.
Summary of the invention
The purpose of this invention is to provide a kind of method of using the necking down extension to obtain the low-dislocation-density epitaxial film, it is characterized in that, this method uses the preparation method of deposit, selective epitaxial and thermal oxidation to make the germanium silicon substrate and the high mobility raceway groove of low-dislocation-density, and concrete technology is as follows:
1) preparation of strain silicon channel
(1) on the silicon substrate of (100) crystal orientation, uses thin, that germanium concentration the is lower germanium silicon of high vacuum chemical vapour deposition UHVCVD deposition one deck, keep certain stress to guarantee this layer germanium silicon, and good surface roughness is arranged;
(2) germanium oxide silicon substrate, improving wherein, the concentration of germanium arrives higher level;
(3) the thick silicon dioxide of thermal oxide growth on the germanium silicon substrate after the oxidation;
(4) deposit the figure that makes a series of holes by lithography on silicon dioxide, the width that guarantees the hole is carved silicon dioxide thoroughly in the position in hole less than the silicon dioxide layer thickness, exposes following germanium silicon layer;
(5) the higher germanium silicon of selective epitaxial germanium concentration in the silicon dioxide hole, the germanium silicon of this concentration and bottom, hole is approaching;
(6) selective epitaxial thin silicon, to keep strain wherein.
2) preparation germanium raceway groove
(1) on the silicon substrate of (100) crystal orientation with UHVCVD deposit one deck thin, germanium concentration is lower
(2) germanium silicon keeps certain stress to guarantee this layer germanium silicon, and good surface roughness is arranged;
(3) germanium oxide silicon substrate, improving wherein, the concentration of germanium arrives higher level;
(4) the thick silicon dioxide of thermal oxide growth on the germanium silicon substrate after the oxidation;
(5) deposit makes the figure in a series of holes by lithography on silicon dioxide, and the width that guarantees the hole is less than the silicon dioxide layer thickness, in the position in hole silicon dioxide is carved thoroughly, exposes following germanium silicon layer;
(6) the higher germanium silicon of selective epitaxial germanium concentration in the silicon dioxide hole, the germanium silicon of this concentration and bottom, hole is approaching;
(7) the thin germanium of selective epitaxial.
3) strained Germanium raceway groove preparation
(1) on the silicon substrate of (100) crystal orientation, uses thin, that germanium concentration the is lower germanium silicon of UHVCVD deposit one deck, keep certain stress to guarantee this layer germanium silicon, and good surface roughness is arranged;
(2) germanium oxide silicon substrate, the concentration that improves germanium wherein is to higher level;
(3) the thick silicon dioxide of thermal oxide growth on the germanium silicon substrate after the oxidation;
(4) deposit the figure that makes a series of holes by lithography on silicon dioxide, the width that guarantees the hole is carved silicon dioxide thoroughly in the position in hole less than the silicon dioxide layer thickness, exposes following germanium silicon layer;
(5) the higher germanium silicon of selective epitaxial germanium concentration in the silicon dioxide hole, the germanium silicon of this concentration and bottom, hole is approaching;
(6) the very thin germanium of selective epitaxial is to keep strain wherein.
Above-mentioned technical process can be simplified, promptly can save the step that oxidation concentrates germanium silicon, on silicon substrate, directly make silicon dioxide hole, selective epitaxial germanium silicon in the hole then, just the thickness of silicon dioxide that requires like this and germanium silicon is all bigger, and all the other steps are identical.
When the invention has the beneficial effects as follows on silicon substrate directly deposit germanium silicon, can control and make it keep strain completely, thereby good surface roughness is arranged.After this germanium silicon layer oxidation, obtained the relaxation germanium silicon that germanium concentration improves, simultaneously, its surface roughness does not significantly worsen.But the dislocation line that exists in the relaxation germanium silicon after the oxidation can have influence on the growth for Thin Film of back.So, the germanium silicon of the same component of selective epitaxial in the silicon dioxide hole, utilize the characteristics (by the crystal structure of germanium silicon) at direction and angle at 45, (100) crystal orientation silicon wafer surface of the helical dislocation line of the germanium silicon of growing on the silicon substrate, as long as the depth-to-width ratio in silicon dioxide hole is controlled at level greater than 1, these dislocations are finally terminated on the sidewall in silicon dioxide hole, thereby do not have dislocation in the germanium silicon on surface.At the germanium silicon face of such utmost point low-dislocation-density, under the condition of accurate control, the deposit heterostructure, can obtain good surface roughness and dislocation density is roughness＜10nm, dislocation density＜10
4Cm
-2, can satisfy the requirement of device and the standard of industrial quarters.
Description of drawings
Fig. 1 is the schematic cross-section of growth strain silicon raceway groove on the germanium silicon substrate.
Fig. 2 is the schematic cross-section of growth germanium raceway groove on the germanium silicon substrate.
Fig. 3 is the schematic cross-section of growth strain germanium raceway groove on the germanium silicon substrate.
Fig. 4 is the schematic diagram of growth channel material on the silicon substrate that uses the direct epitaxial Germanium of necking down mode on the silicon substrate.
Embodiment
The invention provides a kind of method of using the necking down extension to obtain the low-dislocation-density epitaxial film.This method uses the preparation method of deposition, selective epitaxial and thermal oxidation to produce the germanium silicon substrate and the high mobility raceway groove of low-dislocation-density.
Fig. 1-3 is respectively the schematic cross-section of growth strain silicon, germanium and strained Germanium channel structure on the germanium silicon substrate.The manufacture process of these three kinds of structures is: at first at the lower germanium silicon of silicon wafer surface deposition one deck Ge content, this germanium silicon layer is carried out oxidation improve the wherein ratio of germanium; The silicon dioxide layer of grow thick on the germanium silicon after concentrating, photoetching and this layer of etching silicon dioxide obtain a series of pore structure, and the bottom in hole is the germanium silicon layer; In the silicon dioxide hole, use the method growth-layer component germanium silicon identical of selective epitaxial, and the thickness of the germanium silicon of this secondary growth is greater than the diameter in hole with following germanium silicon; The channel material that selective epitaxial needs on the last germanium silicon in the hole corresponding to Fig. 1-3, promptly is respectively strained silicon, germanium and strain germanium layer.Among three figure, the oblique line in the silicon dioxide hole is represented the helical dislocation of germanium silicon layer, and the angle between oblique line and (100) crystal orientation silicon substrate is 45 °.As can be seen, the silicon dioxide wall has stoped the helical dislocation in the germanium silicon to expand to the upper surface of germanium silicon layer, thereby provides high-quality substrate for the growth of channel material.Selective epitaxial silicon or germanium on this substrate, purpose are to prevent that silicon between the adjacent holes or germanium film from joining and form new defective at the upper surface of silicon dioxide.The follow-up structure fabrication of MOSFETs is on the surface of silicon or germanium, and this method also can form isolating naturally between device simultaneously.
Especially, use this technology to make germanium silicon virtual substrate, deposit strained si, germanium or strained Germanium film on this substrate then both can be continued to use traditional cmos process then, can improve mobility of charge carrier rate in the raceway groove of MOSFETs again.The key of this method is to make necking down and selective epitaxial.The present invention mainly uses the preparation method of deposit, selective epitaxial and thermal oxidation.With under the 45nm technology, making the germanium silicon substrate of low-dislocation-density and the process of high mobility raceway groove is example, introduces the method for necking down extension heterofilm below:
1) preparation of strain silicon channel (as shown in Figure 1)
On the silicon substrate of (100) crystal orientation, use UHVCVD method deposit 20～30nm thick, germanium concentration is the germanium silicon of 30～40wt%;
The germanium oxide silicon substrate improves the wherein concentration to 50 of germanium～60wt%;
The silicon dioxide of thermal oxide growth 200～300nm on the germanium silicon substrate after the oxidation;
Photoetching forms that a series of to go out width be the figure in the hole of 90nm on silicon dioxide, the silicon dioxide in the hole is all etched away the germanium silicon layer below exposing;
The germanium silicon of selective epitaxial growth germanium concentration 50～60wt% in the silicon dioxide hole;
The thick silicon of selective epitaxial 10～20nm on germanium silicon is to keep stress wherein.
2) preparation germanium raceway groove (as shown in Figure 2)
On the silicon substrate of (100) crystal orientation, use UHVCVD method deposit 20～30nm thick, germanium concentration is the germanium silicon of 30～40wt%;
The germanium oxide silicon substrate improves the wherein concentration to 60 of germanium～70wt%;
The silicon dioxide of thermal oxide growth 200～300nm on the germanium silicon substrate after the oxidation;
Photoetching forms that a series of to go out width be the figure in the hole of 90nm on silicon dioxide, the silicon dioxide in the hole is all etched away the germanium silicon layer below exposing;
The germanium silicon of selective epitaxial growth germanium concentration 60～70wt% in the silicon dioxide hole;
The germanium that selective epitaxial 10～20nm is thick.
3) strained Germanium raceway groove preparation (as shown in Figure 3)
On the silicon substrate of (100) crystal orientation, use UHVCVD method deposition 20～30nm thick, germanium concentration is the germanium silicon of 30～40wt%;
The germanium oxide silicon substrate improves the wherein concentration to 60 of germanium～70wt%;
The silicon dioxide of thermal oxide growth 200～300nm on the germanium silicon substrate after the oxidation;
Photoetching forms that a series of to go out width be the figure in the hole of 90nm on silicon dioxide, the silicon dioxide in the hole is all etched away the germanium silicon layer below exposing;
The germanium silicon of selective epitaxial growth germanium concentration 60～70wt% in the silicon dioxide hole;
The strained Germanium that selective epitaxial 5～10nm is thick is to guarantee stress (as shown in Figure 4) wherein.
On silicon substrate directly during deposit Germanium silicon, can control and make it keep strain completely, thereby good surface roughness is arranged.After this germanium silicon layer oxidation, obtained the relaxation germanium silicon that germanium concentration improves, simultaneously, its surface roughness does not significantly worsen.But the dislocation line that exists in the relaxation germanium silicon after the oxidation can have influence on the growth for Thin Film of back.So, the germanium silicon of the same component of selective epitaxial in the silicon dioxide hole, utilize the characteristics (by the crystal structure decision of germanium silicon) at direction and angle at 45, (100) crystal orientation silicon wafer surface of the helical dislocation line of the germanium silicon of growing on the silicon substrate, as long as the depth-to-width ratio in silicon dioxide hole is controlled at level greater than 1, these dislocations are finally terminated on the sidewall in silicon dioxide hole, thereby do not have dislocation in the germanium silicon on surface.Germanium silicon face deposition heterostructure at such utmost point low-dislocation-density can obtain good surface roughness and dislocation density, can satisfy the requirement of device.
In addition,, the step that deoxidation concentrates germanium silicon be can economize, silicon dioxide hole, selective epitaxial germanium silicon in the hole then on silicon substrate, directly made in order to simplify technical process.List the key step of this method below:
Thermal oxide growth thickness is the silicon dioxide of 200～300nm on the silicon substrate of (100) crystal orientation;
Dry etching goes out the hole that width is 90nm on silicon dioxide, and allows following germanium silicon layer be exposed to the bottom in hole;
The selective epitaxial germanium concentration is the germanium silicon of 50～70wt% in the hole;
Selective epitaxial silicon, germanium or strained germanium thin film on this germanium silicon substrate.
The method is generalized in the manufacturing of other dissimilar materialss, can on silicon wafer, obtains the film of utmost point low-dislocation-density equally, satisfy the requirement of MOS device or luminescent device.
Claims (4)
1. method of using the necking down extension to obtain the low-dislocation-density epitaxial film, this method uses chemical vapour deposition (CVD), selective epitaxial and thermal oxidation technology to make the germanium silicon substrate and the high mobility raceway groove of low-dislocation-density, it is characterized in that the germanium silicon that UHVCVD method deposit 20～30nm is thick, germanium concentration is 30～40wt% is used in the strain silicon channel preparation on the silicon substrate of (100) crystal orientation; Guaranteeing in this germanium silicon layer to keep stress wherein, and good surface roughness is arranged;
The germanium oxide silicon substrate improves the wherein concentration to 50 of germanium～60wt%;
The silicon dioxide of thermal oxide growth 200～300nm on the germanium silicon substrate after the oxidation;
Photoetching forms the figure in a series of holes on silicon dioxide, the silicon dioxide in the hole is all etched away, and the germanium silicon layer below exposing, and the depth-to-width ratio in silicon dioxide hole is controlled at level greater than 1;
In the silicon dioxide hole selective epitaxial growth one layer component and below the germanium silicon of the same component of germanium silicon layer, wherein germanium concentration is the germanium silicon of 50～60wt%;
The thick silicon of selective epitaxial 10～20nm on germanium silicon is to keep stress wherein.
2. method of using the necking down extension to obtain the low-dislocation-density epitaxial film, this method uses chemical vapour deposition (CVD), selective epitaxial and thermal oxidation technology to make the germanium silicon substrate and the high mobility raceway groove of low-dislocation-density, it is characterized in that the germanium silicon that UHVCVD method deposit 20～30nm is thick, germanium concentration is 30～40wt% is used in the preparation of germanium raceway groove on the silicon substrate of (100) crystal orientation; Guaranteeing in this germanium silicon layer to keep stress wherein, and good surface roughness is arranged;
The germanium oxide silicon substrate improves the wherein concentration to 60 of germanium～70wt%;
The silicon dioxide of thermal oxide growth 200～300nm on the germanium silicon substrate after the oxidation;
Photoetching forms the figure in a series of holes on silicon dioxide, the silicon dioxide in the hole is all etched away, and the germanium silicon layer below exposing, and the depth-to-width ratio in silicon dioxide hole is controlled at level greater than 1;
In the silicon dioxide hole selective epitaxial growth one layer component and below the germanium silicon of the same component of germanium silicon layer, wherein germanium concentration is the germanium silicon of 60～70wt%;
The germanium that selective epitaxial 10～20nm is thick.
3. method of using the necking down extension to obtain the low-dislocation-density epitaxial film, this method uses chemical vapour deposition (CVD), selective epitaxial and thermal oxidation technology to make the germanium silicon substrate and the high mobility raceway groove of low-dislocation-density, it is characterized in that the UHVCVD method deposition germanium silicon that 20～30nm is thick, germanium concentration is 30～40wt% is used in the preparation of strained Germanium raceway groove on the silicon substrate of (100) crystal orientation; Guaranteeing in this germanium silicon layer to keep stress wherein, and good surface roughness is arranged;
The germanium oxide silicon substrate improves the wherein concentration to 60 of germanium～70wt%;
The silicon dioxide of thermal oxide growth 200～300nm on the germanium silicon substrate after the oxidation;
Photoetching forms the figure in a series of holes on silicon dioxide, the silicon dioxide in the hole is all etched away, and the germanium silicon layer below exposing, and the depth-to-width ratio in silicon dioxide hole is controlled at level greater than 1;
In the silicon dioxide hole selective epitaxial growth one layer component and below the germanium silicon of the same component of germanium silicon layer, wherein germanium concentration is the germanium silicon of 60～70wt%;
The strained Germanium that selective epitaxial 5～10nm is thick is to guarantee stress wherein.
4. obtain the method for low-dislocation-density epitaxial film according to claim 1,2 or 3 described use necking down extensions, it is characterized in that described etching is a dry etching.
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| CN1959958A (en) * | 2005-10-31 | 2007-05-09 | 中芯国际集成电路制造(上海)有限公司 | Method and structure for doping grid pole of polysilicon in use for MDS transistor of strain silicon |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011160337A1 (en) * | 2010-06-25 | 2011-12-29 | 中国科学院上海微系统与信息技术研究所 | Mos devide structure for preventing floating body effect and self-heating effect and manufacturing method thereof |
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