CN102456630B - Method for preparing multi-component brazing filler metal coatings of microelectronic device salient points - Google Patents
Method for preparing multi-component brazing filler metal coatings of microelectronic device salient points Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 68
- 239000002184 metal Substances 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000004377 microelectronic Methods 0.000 title claims abstract description 45
- 238000005219 brazing Methods 0.000 title claims abstract description 30
- 239000000945 filler Substances 0.000 title claims abstract description 30
- 238000000576 coating method Methods 0.000 title claims abstract description 27
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 229910000679 solder Inorganic materials 0.000 claims description 94
- 239000000470 constituent Substances 0.000 claims description 37
- 239000010949 copper Substances 0.000 claims description 31
- 229910052802 copper Inorganic materials 0.000 claims description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 26
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 20
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 6
- 238000005289 physical deposition Methods 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052779 Neodymium Inorganic materials 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- -1 Xi Yin Chemical compound 0.000 claims description 3
- 239000006104 solid solution Substances 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 claims description 2
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000010992 reflux Methods 0.000 abstract description 12
- 238000009713 electroplating Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract 3
- 230000001737 promoting effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 239000007788 liquid Substances 0.000 description 12
- 239000000203 mixture Substances 0.000 description 9
- 230000007797 corrosion Effects 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 8
- 238000005275 alloying Methods 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 206010034719 Personality change Diseases 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Abstract
The invention discloses a method for preparing multi-component brazing filler metal coatings of microelectronic device salient points, wherein in the method, the base of a microelectronic device is provided with metal column salient points, and the method comprises the following steps: electroplating a main component brazing filler metal coating on the metal column salient points; depositing micro component coatings on the main component brazing filler metal coating; and refluxing the microelectronic device at the preset temperature, and promoting the micro component coatings to be dissolved in the main component brazing filler metal coating, thereby forming the multi-component brazing filler metal coatings on the metal column salient points. According to the method provided by the invention, the process for preparing the multi-component brazing filler metal coatings of the microelectronic device salient points is simplified.
Description
Technical field
The present invention relates to microelectronics technology, relate in particular to a kind of method for preparing multi-component brazing filler metal coatings of microelectronic device salient points.
Background technology
Along with the continuous progress of microelectric technique, the characteristic size of integrated circuit is constantly dwindled, and interconnection density improves constantly.Due to the requirement that the user improves constantly circuit functionality, the complexity of chip constantly increases.In this case, rely on separately Bonding and realize that chip connects the more and more difficulty that becomes.Bump interconnect can be realized on whole chip surface area, can improve largely the interconnection density between chip and chip or chip and substrate, becomes gradually the mainstream technology of high-density packages.
The Solder bumping method comprises deposition, plating, silk screen printing, plant C4NP technology that ball and IBM develop recently etc.Above-mentioned technology respectively has pluses and minuses.Wherein electroplating Bumping Technology is the major technique of wafer current level Solder bumping.By assisting of thick glue mask, directly carry out the making of solder layer, finally by metal etch under high temperature reflux, salient point, obtain salient point.For improving electrical property and reliability, often use copper pillar bump, first electro-coppering post, then plate one deck solder again at copper capital end.The use of solder layer can reduce the required temperature and pressure of assembling, also guarantees that the suffered stress of chip is within safe range simultaneously.The salient point that this copper post is combined with solder is the main way of interconnection used in current first order encapsulation.The general simple use of prior art is electroplated and is realized, selectable brazing filler metal compositions useful is fewer, is difficult to realize the preparation of the above multicomponent salient point of binary solder.
The microalloying of brazing filler metal alloy is a main method that improves solder performance and welding spot reliability.Many documents of delivering have at present all at length been discussed the impact of various Material Additions on solder performance.For example,, at following document:
[1]D.Q.Yu，et?al.，J?Alloy?Comp，376(2004)170；
[2]F.Guo，et?al.，JOM，61(2009)39；
[3] B.Li, et al, in J.Electron.Mater.34 (2005) 217, mentioned the mechanical property that micro-rare earth element can significantly improve solder, and wetability is improved the heterogeneous microstructure of alloy.At following document:
[4]J.Y.Tsai，et?al.，J.Electron.Mater.32(2003)1203；
[5] C.E.Ho, et al., in J.Mater.Sci:Mater.Electron.18 (2007) 155, mention the growth that adds micro-Ni can suppress solder and copper pad interface C u3Sn compound in the SnAg alloy, for welding spot reliability, there is positive role.At following document:
[6]I.E.Anderson?et?al.，J.Electron.Mater.35(2006)94；
[7] Weiping Liu, et al., Electronic Components and Technology Conference, 2009, in pp 994-1007, mentioned and added microstructure, mechanical property and the reliability that the elements such as micro Fe, Ni, Co, Mn, Ce can significantly improve alloy in the SnAgCu alloy.At following document:
[8] K.Nogita, et al., JOM, in 61 (2009) 45, mentioned in the SnCu alloy and added 0.05wt%Ni, can refinement welding point interface tissue, reduce micro-crack and generate.
In order to realize electroplating the diversification of salient point composition, some new methods are suggested.For example U.S. Pat 6083773A1 and US6893799B2 are used respectively the mode picked with the mould transfer to make solder layer at copper capital end, although this mode can realize multiple brazing filler metal compositions useful, but the technique more complicated, obtainable bump density also has considerable restraint.
In realizing process of the present invention, the inventor recognizes that there is following defect in prior art: preparation technology's more complicated of multicomponent solder on microelectronic component metal column salient point.
Summary of the invention
(1) technical problem that will solve
The object of the invention is to solve in prior art the problem of the complicated process of preparation of multicomponent solder layer on the microelectronic component salient point, thereby propose a kind of method for preparing multi-component brazing filler metal coatings of microelectronic device salient points.
(2) technical scheme
The present invention, by preparing respectively major constituent solder layer and micro-component layers, then impels described micro-component layers to dissolve in the method that described major constituent solder layer forms described multicomponent solder layer, has avoided the complicated technology of Direct Electroplating multicomponent solder.
In addition, by physical deposition mode, prepare the micro-component layers of solder, accurately controlled component and the proportioning of multicomponent solder layer by the thickness of micro-component layers.
(3) beneficial effect
By technical scheme of the present invention, can simplify the preparation technology of microelectronic component salient point, and can obtain high performance multicomponent solder layer.
The accompanying drawing explanation
The flow chart for preparing the multi-component brazing filler metal coatings of microelectronic device salient points method that Fig. 1 is the embodiment of the present invention one;
Fig. 2 is the making passivation layer 3 in substrate 1 of the embodiment of the present invention three and embodiment tetra-correspondences the schematic diagram of selective removal metal pad 2 top, passivation layer;
Fig. 3 be the embodiment of the present invention three and embodiment tetra-correspondences in substrate 1 deposition ubm layer 4 schematic diagram;
Fig. 4 is the making thick photoresist layer 5 in substrate 1 of the embodiment of the present invention three and embodiment tetra-correspondences, and by the schematic diagram of exposure, the acquisition salient point patterns of openings of developing;
Fig. 5 be the embodiment of the present invention three and embodiment tetra-correspondences obtain the schematic diagram of copper post 6 and solder master component layer 7 by plating;
Fig. 6 is the schematic diagram that photoresist 5 is removed of the embodiment of the present invention three correspondences;
Fig. 7 is the schematic diagram that the mode of passing through sputter of the embodiment of the present invention three correspondences is made the micro-component layer 8 of solder;
Fig. 8 be the embodiment of the present invention three correspondences process by high temperature reflux the schematic diagram that obtains alloying solder layer 9;
Fig. 9 be the embodiment of the present invention three correspondences take the schematic diagram of salient point after mask etching is removed micro-component layer and ubm layer;
Figure 10 is the schematic diagram that the mode of passing through sputter of the embodiment of the present invention four correspondences is made the micro-component layer 8 of solder;
Figure 11 is the schematic diagram that the micro-component layer 8 of photoresist 5 and photoresist 5 top solder is removed of the embodiment of the present invention four correspondences;
Figure 12 be the embodiment of the present invention four correspondences process by high temperature reflux the schematic diagram that obtains alloying solder layer 9;
Figure 13 be the embodiment of the present invention four correspondences take the schematic diagram of salient point after mask etching is removed ubm layer.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and, with reference to accompanying drawing, the present invention is described in more detail.
Embodiment mono-:
The flow chart for preparing the multi-component brazing filler metal coatings of microelectronic device salient points method that Fig. 1 is the embodiment of the present invention one.As shown in Figure 1, this method comprises:
Step S102 electroplates the major constituent solder layer on the metal column salient point;
Step S104, the micro-component layers of deposition on the major constituent solder layer;
Step S106 is refluxed to microelectronic component under preset temperature, impels micro-component layers to dissolve in the major constituent solder layer, forms the multicomponent solder layer on the metal column salient point.
In the present embodiment, should prepare in advance the metal column salient point in the substrate of microelectronic component.And above-mentioned preset temperature should guarantee that the micro-component layers of solder dissolves in the major constituent solder layer, and form the multicomponent solder layer.This preset temperature is determined by material and the thickness of major constituent solder layer and micro-component layers.The present embodiment provides a kind of method for preparing multi-component brazing filler metal coatings of microelectronic device salient points, has avoided the complicated technology of Direct Electroplating multicomponent solder layer.
Embodiment bis-:
In prior art, Direct Electroplating multicomponent solder layer can't accurately be controlled its component proportion, and on the basis of embodiment mono-, embodiment bis-has provided the technical scheme of controlling multicomponent solder layer composition.In embodiment bis-, by the thickness proportion of micro-component layers and major constituent solder layer, control the component proportion of multicomponent solder layer.Wherein, to the control of micro-component layers deposit thickness, be key wherein.The present invention utilizes the advantage that the physical deposition mode reliability is strong, adopts physical deposition mode to deposit micro-component layers on the major constituent solder layer, accurately controls the thickness of micro-component layers, thereby reaches the purpose of accurate control multicomponent solder layer component proportion.Preferably, physical deposition mode is sputter or evaporation.
In addition, in the present invention, " micro-component layers is dissolved in the major constituent solder layer " of indication at least comprises following a kind of situation: micro-component layers is dissolved in the major constituent solder layer, forms solid solution; Or micro-component layers and major constituent solder layer reacting generating compound.
Embodiment tri-:
The present embodiment and embodiment tetra-will be that example describes from the complete preparation process of microelectronic component salient point.In the present embodiment, the substrate of microelectronic component used has completed the processing of metal pad, and as shown in Figure 2, in Fig. 2,1 is substrate, can be the silicon wafer of completing circuit device fabrication, and 2 is metal pad, is generally the top-level metallic of silicon wafer.Follow-up Solder bumping comprises the following steps:
Step 1: make passivation layer 3, and selective etch falls the passivation layer 3 on metal pad 2 surfaces, as shown in Figure 2.
Wherein, passivation layer 3 can be but be not limited to be silicon nitride (Si
xn
y), the material such as silica, polyimides, benzocyclobutane olefine resin (BCB).The making of passivation layer can strengthen the low temperature methods such as chemical vapour deposition (CVD) (PECVD), sputter, spin coating by using plasma.
Step 2: at the positive ubm layer 4 of making of substrate 1, as shown in Figure 3.
Ubm layer is mainly for follow-up electroplating technology provides Seed Layer, and can be but be not limited to be the metallic combinations such as titanium/copper (Ti/Cu) or titanium tungsten/copper (TiW/Cu).
Step 3: make thick photoresist layer 5, and through exposure, the acquisition salient point patterns of openings of developing, as shown in Figure 4.
The making of thick photoresist layer can be used the mode of liquid photoresist spin coating, the mode that also can use the dry film photoresist to paste, and photoresist thickness will surpass the height dimension of the salient point of required making.
Step 4: use the mode of electroplating, make metal column salient point 6 and major constituent solder layer 7, as shown in Figure 5.
The major constituent solder layer can have multiple, so long as the material that can make by plating mode all can, the present embodiment is used the major constituent of tin material as solder.The thickness of tin is selected according to the solder alloy component that will obtain.In the present embodiment, the metal column salient point is the copper post.
Step 5: remove thick photoresist layer 5, as shown in Figure 6.
The removal of thick photoresist can be used but not limited to the mode of using ultrasonic auxiliary acetone to soak.
Step 6: use vacuum-deposited mode to make the micro-component layers 8 of solder, as shown in Figure 7.
The vacuum moulding machine mode can be but be not limited to be the technologies such as sputter, evaporation, controllability for technique, the thickness of preferred micro-component layers 8 is between 0.5 nanometer to 1 micron, can be that homogenous material can be also the lamination of a plurality of materials, concrete thickness and composition be selected according to solder major constituent layer thickness and required brazing filler metal compositions useful.The main solder of for example electroplating is Sn-1Ag, and thickness is 30 microns, and target solder bump composition is Sn-1Ag-0.01Ni, and known Sn-1Ag density is 7.39g/cm3, and the density of nickel is 8.9g/cm
3, needing so the thickness of the nickel of deposition is 2.5 nanometers.
Step 7: high temperature reflux forms alloying solder layer 9, as shown in Figure 8.
According to solder layer material therefor type and component proportion, select suitable reflux temperature to control curve, after high temperature reflux, within micro-component layers is dissolved in the major constituent solder layer, form alloy material.The above-mentioned Sn-1Ag-0.01Ni Solder bumping of take is dissolved in the process of 30 micron thick Sn-1Ag solders as example illustrates 2.5 nano nickels.Known to 270 degree, the speed that Ni is dissolved in pure tin is 2.5 * 10
-6cm/s.Therefore it is only 0.1 second that the Ni that thickness is 2.5 nanometers is dissolved in the pure tin required time.Under the unleaded reflux technique condition of typical case, the highest reflux temperature 260 is spent, and approximately 20 seconds time, Sn-1Ag can dissolve these nickel fully.According to current research, the solubility due to nickel in Sn is very little, and therefore, sub-fraction nickel is dissolved in Sn and forms solid solution, and a part can generate Ni
3sn
4intermetallic compound.
Step 8: take salient point as the micro-component layers 8 of mask etching and ubm layer 4, complete the salient point manufacture, as shown in Figure 9.
Outside salient point, micro-component layers in zone does not have alloying, can use corresponding corrosive liquid to remove, although salient point itself comprises micro-component material, alloying, dissolve in the major constituent solder, and material character changes, and can keep out the corrosiveness of corresponding solution.For suprabasil micro-component layers, because it is very thin, be easy to etching.For example prepare above-mentioned Sn-1Ag-0.01Ni salient point, nickel layer thickness is only 2.5 nanometers.And, for ubm layer, the embodiment of the present invention is used the combination of titanium and copper, use respectively copper corrosion liquid and titanium corrosive liquid to process substrate.If select the corrosive liquid of etching copper and mickel simultaneously, need not increase etch step.By above-mentioned etch step, can remove clean by micro-component solder layer and ubm layer.In order to reduce the impact of copper corrosion liquid on the copper post, use the lower copper corrosion liquid of corrosion rate.
Embodiment tetra-:
Embodiment tetra-substrate used is identical with embodiment tri-, and step 1 is also identical with embodiment tri-to step 4, repeats no more here, and follow-up step is as follows:
Step 5: use vacuum-deposited mode to make micro-component layers 8, as shown in figure 10.
The vacuum moulding machine mode can be but be not limited to be the technologies such as sputter, evaporation, controllability for technique, the thickness of preferred micro-component solder layer 8 is between 0.5 nanometer to 1 micron, can be that homogenous material can be also the lamination of a plurality of materials, concrete thickness and composition be selected according to solder major constituent thickness and required brazing filler metal compositions useful.For example, if the plating solder is pure tin, thickness is 30 microns, and the component of target solder is Sn-0.7Cu, and the density of known copper is 8.9g/cm
3, the density of tin is 7.2g/cm
3, by calculating, on tin material, the thickness of deposited copper should be 0.17 micron so.
Step 6: remove the micro-component layers 8 on thick photoresist layer 5 and thick photoresist layer 5, as shown in figure 11.
The removal of thick photoresist can be used but not limited to the mode of using ultrasonic auxiliary acetone to soak.
Step 7: high temperature reflux forms alloying solder layer 9, as shown in figure 12.
According to solder layer material therefor type and component proportion, select suitable reflux temperature to control curve, after high temperature reflux, within micro-component layers is dissolved in the major constituent solder layer, form alloy material.
Step 8: take salient point as mask etching ubm layer 4, complete the salient point manufacture, as shown in figure 13.
The combination that under the salient point that the embodiment of the present invention is used, metal is titanium and copper, used respectively copper corrosion liquid and titanium corrosive liquid to process substrate, and ubm layer is removed totally, in order to reduce the impact of copper corrosion liquid on the copper post, uses the lower copper corrosion liquid of corrosion rate.
Bis-pairs of methods that prepare multi-component brazing filler metal coatings of microelectronic device salient points of embodiment mono-and embodiment are illustrated; Tetra-pairs of complete methods that prepare the microelectronic component salient point of embodiment tri-and embodiment are illustrated.In the various embodiments described above, substrate can be a kind of in the semi-conducting materials such as silicon, germanium silicon, GaAs, silicon-on-insulator (SOI) or glass, pottery, sapphire insulation material.The metal column salient point can be in copper, nickel, gold a kind of; The metal column bump height can be between 1 micron to 100 microns.Solder master component layer used can be a kind of material in metallic tin, indium, Xi Yin, tin copper, tin indium, tin bismuth, SAC.The thickness of solder master component layer can be between 1 micron to 100 microns.The micro-component layer of solder used can be one or more combination in the metal materials such as silver, copper, platinum, gold, titanium, palladium, germanium, aluminium, manganese, nickel, iron, chromium, cobalt, neodymium, cerium, neodymium, lanthanum.The micro-component layer thickness of solder can be between 0.5 nanometer to 1 micron.
In embodiment tri-and embodiment tetra-, ubm layer is but is not limited to be the combinations of materials such as titanium/copper (Ti/Cu) or titanium tungsten/copper (TiW/Cu).Make thick photoresist and adopt the modes such as liquid photoresist spin coating or the stickup of dry film photoresist.
It should be noted that if no special instructions or mutually and conflict, preparation parameter herein can be applied to the various embodiments described above and produce correspondingly technique effect, repeats no more herein.
Above specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; these are only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (11)
1. a method for preparing multi-component brazing filler metal coatings of microelectronic device salient points, is characterized in that, has the metal column salient point in the substrate of described microelectronic component, and the method comprises:
Preparation major constituent solder layer on described metal column salient point;
The micro-component layers of deposition on described major constituent solder layer;
Under preset temperature, described microelectronic component is refluxed, impel described micro-component layers to dissolve in described major constituent solder layer, form described multicomponent solder layer on described metal column salient point, wherein, described micro-component layers is dissolved in described major constituent solder layer and at least comprised following a kind of situation: described micro-component layers is dissolved in described major constituent solder layer, forms solid solution; Or described micro-component layers and described major constituent solder layer reacting generating compound.
2. the method for preparing multi-component brazing filler metal coatings of microelectronic device salient points according to claim 1, is characterized in that, material and the thickness of the corresponding described major constituent solder layer of described preset temperature and described micro-component layers.
3. the method for preparing multi-component brazing filler metal coatings of microelectronic device salient points according to claim 1, is characterized in that, by the thickness proportion of described micro-component layers and described major constituent solder layer, controls the component proportion of described multicomponent solder layer.
4. the method for preparing multi-component brazing filler metal coatings of microelectronic device salient points according to claim 3, is characterized in that, adopts physical deposition mode to deposit described micro-component solder layer on described major constituent solder layer.
5. the method for preparing multi-component brazing filler metal coatings of microelectronic device salient points according to claim 4, is characterized in that, described physical deposition mode is sputter or evaporation.
6. the method for preparing multi-component brazing filler metal coatings of microelectronic device salient points according to claim 1, is characterized in that, adopts plating mode to prepare the major constituent solder layer on described metal column salient point.
7. prepare according to claim 1 the method for multi-component brazing filler metal coatings of microelectronic device salient points, it is characterized in that, described major constituent solder layer is a kind of in following material: tin, indium, Xi Yin, tin copper, tin indium, tin bismuth, SAC.
8. prepare according to claim 7 the method for multi-component brazing filler metal coatings of microelectronic device salient points, it is characterized in that, described micro-component layers is one or more combinations in following material: silver, copper, platinum, gold, titanium, palladium, germanium, aluminium, manganese, nickel, iron, chromium, cobalt, neodymium, cerium, neodymium, lanthanum.
9. according to the described method for preparing multi-component brazing filler metal coatings of microelectronic device salient points of any one in claim 1 to 8, it is characterized in that,
Describedly also comprise electroplate the major constituent solder layer on the metal column salient point before: the position at the above metal column salient point of substrate of described microelectronic component prepares metal pad; Prepare passivation layer in the substrate of described microelectronic component; The passivation layer at the described metal pad of selective removal top; Prepare ubm layer in the substrate of described microelectronic component; Make photoresist layer on described ubm layer; Photoresist layer by exposure, the described metal column salient point of development step selective removal position; Plated metal post salient point in the substrate of described microelectronic component;
Describedly on the metal column salient point, after preparation major constituent solder layer, also comprise: remove described photoresist layer;
Describedly under preset temperature, described microelectronic component is refluxed, impel described micro-component layers to dissolve in described major constituent solder layer, form described multicomponent solder layer and also comprise afterwards: the described multicomponent solder layer remaining micro-component layers in the described microelectronic component substrate of mask etching of take reaches the ubm layer except described metal column salient point position.
10. according to the described method for preparing multi-component brazing filler metal coatings of microelectronic device salient points of any one in claim 1 to 8, it is characterized in that,
Describedly also comprise electroplate the major constituent solder layer on the metal column salient point before: the position at the above metal column salient point of substrate of described microelectronic component prepares metal pad; Prepare passivation layer in the substrate of described microelectronic component; The passivation layer at the described metal pad of selective removal top; Prepare ubm layer in the substrate of described microelectronic component; Make photoresist layer on described ubm layer; Photoresist layer by exposure, the described metal column salient point of development step selective removal position; Plated metal post salient point in the substrate of described microelectronic component;
Described on the major constituent solder layer deposition also comprise after micro-component layers: remove described photoresist layer and reach the micro-component layers except described metal column salient point position;
Describedly under preset temperature, described microelectronic component is refluxed, impel described micro-component layers to dissolve in described major constituent solder layer, form described multicomponent solder layer and also comprise afterwards: take described multicomponent solder layer as the ubm layer of mask etching except described metal column salient point position.
11. according to the described method for preparing multi-component brazing filler metal coatings of microelectronic device salient points of any one in claim 1 to 8, it is characterized in that,
At least one in following material of described metal column salient point forms: copper, nickel, gold; The height of described metal column salient point is between 1 micron to 100 microns.
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| CN106057692B (en) * | 2016-05-26 | 2018-08-21 | 河南工业大学 | A kind of three dimensional integrated circuits storehouse integrated approach and three dimensional integrated circuits |
| FR3088018B1 (en) * | 2018-11-06 | 2023-01-13 | Mbda France | METHOD FOR BONDING BY BRASSAGE FOR IMPROVING THE FATIGUE STRENGTH OF BRAZED JOINTS |
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| CN101617396A (en) * | 2007-03-23 | 2009-12-30 | 英特尔公司 | Copper die bumps with electromigration cap and plated solder |
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