CN102456604A - Chuck, manufacturing method thereof and wafer treatment equipment with chuck - Google Patents
Chuck, manufacturing method thereof and wafer treatment equipment with chuck Download PDFInfo
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- CN102456604A CN102456604A CN2010105210987A CN201010521098A CN102456604A CN 102456604 A CN102456604 A CN 102456604A CN 2010105210987 A CN2010105210987 A CN 2010105210987A CN 201010521098 A CN201010521098 A CN 201010521098A CN 102456604 A CN102456604 A CN 102456604A
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- chuck
- thin layer
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Abstract
The invention discloses a chuck, which comprises a pedestal, a thin film heater, a heat uniformizing plate and a chuck body, wherein the thin film heater is positioned on the pedestal; the heat uniformizing plate is arranged on the thin film heater; a heat-conducting thin layer is arranged in part of unit grids of which tested temperature is lower than preset temperature on the heat uniformizing plate; and the chuck body is positioned on the heat uniformizing plate of the heat-conducting thin layer. The invention also discloses a method for manufacturing the chuck and wafer treatment equipment with the chuck. According to the chuck, the heat-conducting thin layer is arranged on the local surface of the heat uniformizing plate to improve the heat conductivity of the surface of the heat uniformizing plate. The influence of the thickness of the heat-conducting thin layer on the thickness of an adhesive layer adhered to the chuck body can be neglected, so that the heat-conducting uniformity of the adhesive layer between the heat uniformizing plate and the chuck body can be improved, the temperature uniformity of the surface of a chuck part further can be improved and the yield of the product can be increased.
Description
Technical field
The present invention relates to semiconductor fabrication, particularly a kind of improved chuck and manufacturing approach thereof and have the wafer processing apparatus of this improved chuck.
Background technology
The plasma process technology is meant the gas ionization that will feed reative cell under certain condition, produces the plasma that comprises positive and negative charged particle and free atom group.Wherein, plasma and substrate generation physics and chemical reaction are to obtain needed semiconductor structure.
Along with the progress of semiconductor technology, the live width size of semiconductor chip is more and more littler.This has higher precision with regard to the key components and parts that requires semiconductor equipment especially to operate in the plasma reaction chamber, for example electrostatic chuck (ESC).
Particularly, electrostatic chuck is used to make silicon chip to remain on resting position, and the constant uniform temperature is provided for silicon chip.Fig. 1 is the structural representation of existing electrostatic chuck 100 '.As shown in Figure 1, pedestal 1 ' bonds together through first tack coat 2 ' with thin film heater 3 '.The inside of pedestal 1 ' has fluid passage 11 '.Top at thin film heater 3 ' is equipped with even heat plate 4 '.Even heat plate 4 ' further bonds together through second tack coat 6 ' with ceramic chuck 7 '.When adopting silica gel that thin film heater 3 ' and pedestal 1 ' are bonded together, unavoidably indivedual bonding defects 21 ' can appear, like air blister defect etc.Because the existence of above-mentioned bonding defect 21 '; Make local silica gel thickness reduce; Heat to pedestal 1 ' cooling direction transmission increases, and then reduces the silicon chip surface non-uniform temperature that finally causes electrostatic chuck 100 ' to carry to the heat that ceramic chuck 7 ' direction is transmitted.And electrostatic chuck 100 ' non-uniform temperature can cause the reduction of product yield.
Patent (application number is 200780032316, and the applying date is 2007-08-24) discloses a kind of electrostatic chuck, before the ceramic chuck that do not bond, the even heat plate upper surface is divided into several coordinate grids, and the serviceability temperature probe detects the temperature of each grid respectively.As shown in Figure 2, if there is air blister defect in the silica gel layer of certain grid, this grid temperature that probe in detecting arrives is on the low side, then uses mode such as laser drill in this grid boring 5 ' on the even heat plate surface, with the cooling surface area that increases this grid to improve this grid temperature.
The shortcoming that above-mentioned technology exists: after the even heat plate zone boring on the low side, adopt binding agent ceramic chuck to be installed at the upper surface of even heat plate to temperature.At this moment, binding agent still can flow in the hole on even flow plate surface, thereby causes the adhesive thickness between ceramic chuck and the even heat plate inhomogeneous, therefore finally can cause in the electrostatic chuck course of work surface temperature inhomogeneous equally.
Summary of the invention
The object of the invention is intended to solve at least one of technological deficiency that exists in the prior art; Special in the uneven problem of existing chuck surface temperature; Thereby proposed a kind of improved chuck, thereby improved the temperature homogeneity that chuck carries silicon chip surface, and then improved the product yield.
For achieving the above object, one aspect of the present invention has proposed a kind of chuck, comprising: pedestal; Thin film heater, said thin film heater are positioned on the said pedestal; Even heat plate, said even heat plate are installed on the said thin film heater, wherein, in the unit grids on said even heat plate top, are provided with the heat conduction thin layer, and the unit grids of said part is the unit grids that dut temperature is lower than preset temperature; And chuck body, institute's chuck body is positioned on the even heat plate with said heat conduction thin layer.
According to the chuck of the embodiment of the invention, through being provided with the heat conduction thin layer in the part unit grids on even heat plate, to increase the thermal conductivity on even heat plate surface.
According to one embodiment of present invention, the thickness of said heat conduction thin layer is 2 μ m～10 μ m.
According to one embodiment of present invention, said chuck body and have between the even heat plate of said heat conduction thin layer and be provided with tack coat, and the thickness of said tack coat is at least 100 μ m.
Thus; The influence of the very thin adhesive layer thickness to later process bonding chuck body of heat conduction thin layer almost can be ignored; Make that the tack coat heat conduction between even heat plate and the chuck body is even, and then improve the temperature homogeneity on chuck part surface, improve yield of products.
According to one embodiment of present invention, said heat conduction thin layer is silver coating, Gold plated Layer or platinum plating layer.
According to one embodiment of present invention, the area of said unit grids is 5mm
2～100mm
2
The present invention has proposed a kind of manufacturing approach of chuck on the other hand, comprises the steps:
Pedestal is provided;
On said pedestal, form thin film heater, and on said thin film heater, even heat plate is installed;
On the upper surface of said even heat plate, divide a plurality of unit grids;
Measure on the said even heat plate the corresponding temperature of each unit grids respectively, and detect the corresponding dut temperature of said each unit grids and whether be lower than preset temperature;
Be lower than at said dut temperature and form the heat conduction thin layer on the unit grids of said preset temperature; With
On the even heat plate that is formed with said heat conduction thin layer, form chuck body.
The manufacturing approach of the chuck of the embodiment of the invention is provided with the heat conduction thin layer through the local surfaces that is lower than the even heat plate of preset temperature in temperature, to increase the thermal conductivity on even heat plate surface.Because the thickness of heat conduction thin layer can be ignored the influence of bonding chuck body; Thereby through the heat conduction uniformity that the heat conduction thin layer can improve the tack coat between even heat plate and the chuck body is set; And then improve the temperature homogeneity of chuck surface, improve yield of products.
According to one embodiment of present invention, the thickness of said heat conduction thin layer is 2-10 μ m.
According to one embodiment of present invention, said chuck body bonds together through formed tack coat of binding agent and the even heat plate that is formed with said heat conduction thin layer, and the thickness of said tack coat is at least 100 μ m.
When the thickness of heat conduction thin layer is positioned at above-mentioned interval; The influence of the very thin adhesive layer thickness to later process bonding chuck body of heat conduction thin layer almost can be ignored; Make that the tack coat heat conduction between even heat plate and the chuck body is even; And then improve the temperature homogeneity on chuck part surface, improve yield of products.
According to one embodiment of present invention, said heat conduction thin layer is silver coating, Gold plated Layer or platinum plating layer.
According to one embodiment of present invention, the area of said unit grids is 5mm
2～100mm
2
According to one embodiment of present invention,, the upper surface of said even heat plate also comprises before dividing grid:
Semi-finished product to said pedestal, said thin film heater and chuck that said even heat plate forms heat, so that the semi-finished product of said chuck reach hygral equilibrium.
Thus, after said pedestal, thin film heater and even heat plate reach hygral equilibrium, divide grid at the upper surface of said even heat plate.Thus, be subdivided into a plurality of zones, be convenient to the temperature of All Ranges on the complete detection even heat plate surface, avoid occurring the zone of omission through upper surface to even heat plate.
Further aspect of the present invention has proposed a kind of wafer processing apparatus, comprises reative cell; Aforesaid chuck, said chuck is arranged in the said reative cell.
The wafer processing apparatus that the embodiment of the invention provides improves the temperature homogeneity on chuck part surface through adopting aforesaid chuck, improves yield of products.
According to one embodiment of present invention, wafer processing apparatus further comprises pallet, and said pallet is removably disposed on the said chuck.
According to one embodiment of present invention, said reative cell is used for wafer is carried out Cement Composite Treated by Plasma.
Aspect that the present invention adds and advantage part in the following description provide, and part will become obviously from the following description, or recognize through practice of the present invention.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously with easily understanding becoming the description of embodiment below in conjunction with accompanying drawing, wherein:
Fig. 1 is the sketch map of existing chuck;
Fig. 2 is the partial schematic diagram of existing a kind of chuck, wherein on the even heat plate of this chuck, adjustment hole is set;
Fig. 3 is the structural representation of chuck according to an embodiment of the invention;
Fig. 4 is a sketch map of the even heat plate of the chuck among Fig. 3 being divided grid;
Fig. 5 is the manufacturing process flow diagram of chuck according to an embodiment of the invention;
Fig. 6 is the sketch map of wafer processing apparatus according to an embodiment of the invention; With
Fig. 7 is the sketch map of wafer processing apparatus in accordance with another embodiment of the present invention.
Embodiment
Describe embodiments of the invention below in detail, the example of said embodiment is shown in the drawings, and wherein identical from start to finish or similar label is represented identical or similar elements or the element with identical or similar functions.Be exemplary through the embodiment that is described with reference to the drawings below, only be used to explain the present invention, and can not be interpreted as limitation of the present invention.
Disclosing of hereinafter provides many various embodiment or example to be used for realizing different structure of the present invention.Of the present invention open in order to simplify, hereinafter the parts and the setting of specific examples are described.Certainly, they only are example, and purpose does not lie in restriction the present invention.In addition, the present invention can be in different examples repeat reference numerals and/or letter.This repetition is in order to simplify and purpose clearly, itself not indicate the relation between various embodiment that discuss of institute and/or the setting.In addition, various specific technology and the examples of material that the invention provides, but those of ordinary skills can recognize the property of can be applicable to of other technologies and/or the use of other materials.In addition; First characteristic of below describing second characteristic it " on " structure can comprise that first and second characteristics form the embodiment of direct contact; Can comprise that also additional features is formed on the embodiment between first and second characteristics, such first and second characteristics possibly not be direct contacts.
Chuck according to the embodiment of the invention at first is described with reference to the drawings the present invention in order better to explain.Wherein, Fig. 3 is the structural representation of chuck according to an embodiment of the invention, and Fig. 4 is a sketch map of the even heat plate of the chuck among Fig. 3 being divided grid.
Like Fig. 3 and shown in Figure 4, comprise according to the chuck 100 of the embodiment of the invention: pedestal 1, thin film heater 3, even heat plate 4 and chuck body 7
As shown in Figure 3, pedestal 1 is positioned at the bottommost of chuck 100, and its inside has fluid passage 11.Heat-conduction medium can cool off through the 11 pairs of chucks 100 in fluid passage.Thin film heater 3 is bonded on the pedestal 1 through binding agent.Binding agent forms first tack coat 2 between thin film heater 3 and pedestal 1.Even heat plate 4 further is installed on thin film heater 3, wherein, has heat conduction thin layer 5 on the part unit area of even heat plate 4, wherein the unit grids of this part is the unit grids that dut temperature is lower than preset temperature.In one embodiment of the invention, there is the threshold temperature of corresponding air blister defect in preset temperature for the first corresponding tack coat 2 of preset judgement unit grids.On above-mentioned heat conduction thin layer 5, be bonded with chuck body 7 through binding agent.Binding agent is in chuck body 7 and have between even heat plate 4 bonding of heat conduction thin layer 5 and form second tack coat 6.Chuck body 7 can support and be fixed in the pending wafer of its upper surface, and for example, chuck body 7 can be processed by ceramic material.
In one embodiment of the invention, binding agent can be silica gel.Certainly it will be appreciated by persons skilled in the art that binding agent also can adopt other materials.
In one embodiment of the invention, the thickness of second tack coat 6 is at least 100 μ m.
Preferably, in embodiments of the present invention, after with pedestal 1, thin film heater 3 and even heat plate 4 assembled, temporary transient non-caked chuck body 7 earlier.But, wait for that it reaches hygral equilibrium to said base 1, thin film heater 3 and even heat plate 4 energising heating.
In order to detect the position that has bonding defect in the chuck 100, like air blister defect, on the upper surface of even heat plate 4, divide coordinate grid, as shown in Figure 4.Wherein, coordinate grid is made up of a plurality of unit grids.Adopt temperature probe to detect the temperature of each unit grids respectively.When the temperature that detects unit grids when probe is lower than preset temperature, can judge that then there is air blister defect 21 in the first corresponding tack coat 2 of this unit grids.
In one embodiment of the invention, the area of above-mentioned unit grids can be about 5mm
2～100mm
2
Upper surface through at even heat plate 4 is divided coordinate grid, is subdivided into a plurality of zones, can intactly survey the temperature of All Ranges on the even heat plate surface, thereby can avoid the situation of omission air blister defect.
On even heat plate 4, detect the zone that temperature is lower than preset temperature heat conduction thin layer 5 is set above-mentioned.This heat conduction thin layer 5 can increase this regional heat-sinking capability, thereby improves this regional temperature.Because the thickness of the heat conduction thin layer 5 of the embodiment of the invention is extremely thin; Its thickness can be ignored second tack coat, 6 thickness more than 100 μ m; Therefore in the thermal conductivity that increases even heat plate 4 local surfaces, can the thickness of second tack coat 6 on the heat conduction thin layer 5 not exerted an influence.
In a preferred embodiment of the invention, the thickness of heat conduction thin layer is about 2 μ m～10 μ m.
Through this heat conduction thin layer 5 is set, makes that second tack coat, 6 heat conduction between even heat plate 4 and the chuck body 7 are even, thereby improve the temperature homogeneity of the upper surface of chuck 100, and then further improve the uniformity of the surface temperature of the wafer that is carried on the chuck 100.
In one embodiment of the invention, heat conduction thin layer 5 can be silver coating, Gold plated Layer or platinum plating layer.Certainly in other embodiments of the invention, heat conduction thin layer 5 also can be other compound-material layers.It will be appreciated by those skilled in the art that, can also select other materials, the replacement that is equal to of heat conduction thin layer 5 is waited and all should be included within protection scope of the present invention but be based on the object of the invention as heat conduction thin layer 5.
The chuck 100 of the embodiment of the invention is provided with heat conduction thin layer 5 through the local surfaces at even heat plate 4, to increase the thermal conductivity on even heat plate surface.
Because the thickness of second tack coat 6 is more than the 100 μ m; Thereby the thickness of heat conduction thin layer 5 can be ignored the influence of the thickness of second tack coat 6 of bonding chuck body 7; Therefore can improve the heat conduction uniformity of second tack coat 6; And then improve the temperature homogeneity on chuck part surface, improve yield of products.
The technological process of the manufacturing approach of above-mentioned chuck 100 is described below in conjunction with Fig. 3-5.As shown in Figure 5, this method comprises the steps:
S101: pedestal 1 is provided, on pedestal 1, forms thin film heater 3, and even heat plate 4 is installed on thin film heater 3.
Particularly, through binding agent adhesive film heater 3, wherein, binding agent can be silica gel on pedestal 1.Silica gel forms first tack coat 2 between pedestal 1 and thin film heater 3.Even heat plate 4 further is installed on thin film heater 3.
S102: on the upper surface of even heat plate, divide coordinate grid.
In S101, install after the even heat plate, earlier with pedestal 1, thin film heater 3 and even heat plate 4 energising heating, wait for that it reaches hygral equilibrium after, divide coordinate grid at the upper surface of even heat plate 4 again.As shown in Figure 4, coordinate grid is made up of a plurality of unit grids.
S103: measure on the even heat plate the corresponding temperature of each unit grids respectively, and detect the corresponding temperature of each unit grids and whether be lower than preset temperature.
According to the coordinate grid of dividing among the S102, adopt temperature probe to detect the temperature of each unit grids respectively, judge whether it is lower than preset temperature.Wherein, there is the threshold temperature of air blister defect in preset temperature for the first corresponding tack coat 2 of preset judgement unit grids.
S104: be lower than in temperature and form the heat conduction thin layer on the unit grids of preset temperature.
When the temperature that detects unit grids when probe is lower than preset temperature, can judge that then there is air blister defect 21 in first corresponding under this unit grids tack coat 2.
In one embodiment of the invention, the area of above-mentioned unit grids can be about 5mm
2～100mm
2
Upper surface through at even heat plate 4 is divided coordinate grid, is subdivided into a plurality of unit grids, can intactly survey the temperature of All Ranges on the even heat plate surface, thereby can avoid the situation of omission air blister defect.
On even heat plate 4, above-mentioned detecting formed heat conduction thin layer 5 on the zone that temperature is lower than preset temperature.This heat conduction thin layer 5 can increase this regional area of dissipation, thereby improves this regional temperature.Because the very thin thickness of heat conduction thin layer 5, so in the thermal conductivity that increases even heat plate 4 local surfaces, can be not influential to the thickness (being generally more than the 100 μ m) of second tack coat 6 on the heat conduction thin layer 5.
In one embodiment of the invention, the thickness of heat conduction thin layer is about 2 μ m～10 μ m.
Through this heat conduction thin layer 5 is set, make that the second tack coat heat conduction between even heat plate 4 and the chuck body 7 is even.Thereby improve the temperature homogeneity of the upper surface of chuck 100, and then improve the uniformity of the surface temperature of the wafer that is carried on the chuck 100, improve yield of products.
In one embodiment of the invention, heat conduction thin layer 5 can be silver coating, Gold plated Layer or platinum plating layer.
Certainly, it will be appreciated by those skilled in the art that when heat conduction thin layer 5 was embodied as other Heat Conduction Materials, above-mentioned heat conduction thin layer 5 also fell within protection scope of the present invention.
S105: on the even heat plate 4 that forms heat conduction thin layer 5, form chuck body 7.
In S104, pass through binding agent bonding chuck body 7 on the even heat plate 4 of formation heat conduction thin layer 5.Wherein, binding agent can be silica gel.Silica gel forms second tack coat 6 between heat conduction thin layer 5 and chuck body 7.
According to the chuck manufacturing approach of the embodiment of the invention,, make that second tack coat, 6 heat conduction between even heat plate 4 and the chuck body 7 are even through this heat conduction thin layer 5 is set.Thereby improve the temperature homogeneity of the upper surface of chuck 100, and then improve the uniformity of the surface temperature of the wafer that is carried on the chuck 100, improve yield of products.
The sketch map of the wafer processing apparatus 1000 with chuck 100 is described with reference to figure 6 below.
As shown in Figure 6, wafer processing apparatus 1000 comprises chuck 100 and reative cell 200.Above-mentioned reative cell 200 can be used for wafer 400 is carried out Cement Composite Treated by Plasma.
Particularly, chuck 100 is contained in the reative cell 200, is placed with pending wafer 400 at the upper surface of chuck 100.Above-mentioned wafer 400 can fixed and support to chuck 100.During Cement Composite Treated by Plasma, the wafer 400 that is placed on the chuck 100 is carried out etching technics through reative cell 200.
In other embodiments of the invention, also can adopt pallet with fixing and supporting wafers.As shown in Figure 7, comprise above-mentioned chuck 100, reative cell 200, pallet 300 according to the wafer processing apparatus 1000 of the embodiment of the invention.Above-mentioned reative cell 200 can be used for wafer 400 is carried out Cement Composite Treated by Plasma.
Particularly, chuck 100 is contained in the reative cell 200, and pallet 300 is arranged on the chuck 100 removedly, and pending wafer 400 can further be placed on the pallet 300.Fix, support and transmit wafer 400 through pallet 300.
When 200 pairs of wafers of reative cell 400 carried out Cement Composite Treated by Plasma, the pallet 300 that is placed with wafer 400 got into reative cells 200, and promptly wafer 400 is transferred into reative cell 200 through pallet 300 and carries out PROCESS FOR TREATMENT.After being loaded with the pallet 300 entering reative cells 200 of wafer 400, being placed on and carrying out etching technics on the chuck 100.After the Cement Composite Treated by Plasma, the pallet 300 that is loaded with wafer 400 leaves from chuck 200, and further leaves reative cell 200.
This wafer processing apparatus 1000 according to the embodiment of the invention passes through to adopt aforesaid chuck 100; Improve the temperature homogeneity on chuck part surface; Be positioned at the pallet that is loaded with wafer of chuck top and the temperature homogeneity of wafer when further having improved technology, improve yield of products through thermal conductivity.
Although illustrated and described embodiments of the invention; For those of ordinary skill in the art; Be appreciated that under the situation that does not break away from principle of the present invention and spirit and can carry out multiple variation, modification, replacement and modification that scope of the present invention is accompanying claims and be equal to and limit to these embodiment.
Claims (14)
1. a chuck is characterized in that, comprising:
Pedestal;
Thin film heater, said thin film heater are positioned on the said pedestal;
Even heat plate, said even heat plate are installed on the said thin film heater, wherein, in the unit grids on said even heat plate top, are provided with the heat conduction thin layer, and the unit grids of said part is the unit grids that dut temperature is lower than preset temperature; With
Chuck body, institute's chuck body is positioned on the even heat plate with said heat conduction thin layer.
2. chuck as claimed in claim 1 is characterized in that, the thickness of said heat conduction thin layer is 2 μ m～10 μ m.
3. according to claim 1 or claim 2 chuck is characterized in that, said chuck body and have between the even heat plate of said heat conduction thin layer and be provided with tack coat, and the thickness of said tack coat is at least 100 μ m.
4. chuck as claimed in claim 1 is characterized in that, said heat conduction thin layer is silver coating, Gold plated Layer or platinum plating layer.
5. chuck as claimed in claim 1 is characterized in that, the area of said unit grids is 5mm
2～100mm
2
6. the manufacturing approach of a chuck is characterized in that, comprises the steps:
Pedestal is provided;
On said pedestal, form thin film heater;
On said thin film heater, even heat plate is installed;
On the upper surface of said even heat plate, divide a plurality of unit grids;
Measure on the said even heat plate the corresponding temperature of each unit grids respectively, and detect the corresponding dut temperature of said each unit grids and whether be lower than preset temperature;
Be lower than at said dut temperature and form the heat conduction thin layer on the unit grids of said preset temperature; With
On the even heat plate that is formed with said heat conduction thin layer, form chuck body.
7. manufacturing approach as claimed in claim 6 is characterized in that, the thickness of said heat conduction thin layer is 2-10 μ m.
8. like claim 6 or 7 described chucks, it is characterized in that said chuck body bonds together through formed tack coat of binding agent and the even heat plate that is formed with said heat conduction thin layer, and the thickness of said tack coat is at least 100 μ m.
9. manufacturing approach as claimed in claim 6 is characterized in that, said heat conduction thin layer is silver coating, Gold plated Layer or platinum plating layer.
10. manufacturing approach as claimed in claim 6 is characterized in that, the area of said unit grids is 5mm
2～100mm
2
11. manufacturing approach as claimed in claim 6 is characterized in that, before the upper surface of said even heat plate is divided grid, also comprises:
Semi-finished product to said pedestal, thin film heater and chuck that even heat plate forms heat, so that the semi-finished product of said chuck reach hygral equilibrium.
12. a wafer processing apparatus is characterized in that, comprising:
Reative cell;
Like each described chuck among the claim 1-5, said chuck is arranged in the said reative cell.
13. wafer processing apparatus as claimed in claim 12 is characterized in that, further comprises pallet, said pallet is removably disposed on the said chuck.
14. wafer processing apparatus as claimed in claim 12 is characterized in that, said reative cell is used for wafer is carried out Cement Composite Treated by Plasma.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105210987A CN102456604A (en) | 2010-10-21 | 2010-10-21 | Chuck, manufacturing method thereof and wafer treatment equipment with chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105210987A CN102456604A (en) | 2010-10-21 | 2010-10-21 | Chuck, manufacturing method thereof and wafer treatment equipment with chuck |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102456604A true CN102456604A (en) | 2012-05-16 |
Family
ID=46039633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105210987A Pending CN102456604A (en) | 2010-10-21 | 2010-10-21 | Chuck, manufacturing method thereof and wafer treatment equipment with chuck |
Country Status (1)
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|---|---|
| CN (1) | CN102456604A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110289241A (en) * | 2019-07-04 | 2019-09-27 | 北京北方华创微电子装备有限公司 | Electrostatic chuck and preparation method thereof, processing chamber and semiconductor processing equipment |
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|---|---|---|---|---|
| CN1513107A (en) * | 2001-06-06 | 2004-07-14 | Fsi���ʹ�˾ | Heating member for combination heating and chilling apparatus, and heating methods thereof |
| JP2007035878A (en) * | 2005-07-26 | 2007-02-08 | Kyocera Corp | Wafer retainer and its manufacturing method |
| CN101061578A (en) * | 2004-10-19 | 2007-10-24 | 佳能安内华股份有限公司 | Substrate supporting/transferring tray |
| CN101512750A (en) * | 2006-08-29 | 2009-08-19 | 朗姆研究公司 | Method of tuning thermal conductivity of electrostatic chuck support assemply |
-
2010
- 2010-10-21 CN CN2010105210987A patent/CN102456604A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1513107A (en) * | 2001-06-06 | 2004-07-14 | Fsi���ʹ�˾ | Heating member for combination heating and chilling apparatus, and heating methods thereof |
| CN101061578A (en) * | 2004-10-19 | 2007-10-24 | 佳能安内华股份有限公司 | Substrate supporting/transferring tray |
| JP2007035878A (en) * | 2005-07-26 | 2007-02-08 | Kyocera Corp | Wafer retainer and its manufacturing method |
| CN101512750A (en) * | 2006-08-29 | 2009-08-19 | 朗姆研究公司 | Method of tuning thermal conductivity of electrostatic chuck support assemply |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110289241A (en) * | 2019-07-04 | 2019-09-27 | 北京北方华创微电子装备有限公司 | Electrostatic chuck and preparation method thereof, processing chamber and semiconductor processing equipment |
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Application publication date: 20120516 |