CN103578899A - Plasma processing device and electro static chuck thereof - Google Patents
Plasma processing device and electro static chuck thereof Download PDFInfo
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- CN103578899A CN103578899A CN201210277352.2A CN201210277352A CN103578899A CN 103578899 A CN103578899 A CN 103578899A CN 201210277352 A CN201210277352 A CN 201210277352A CN 103578899 A CN103578899 A CN 103578899A
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- insulating barrier
- electrostatic chuck
- heat conduction
- conduction layer
- insulating layer
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Abstract
The invention relates to an electro static chuck. The electro static chuck is used in a reaction chamber of a plasma processing device, and is used for fixing a workpiece to be processed. The electro static chuck comprises a first insulating layer, a second insulating layer and a base body, wherein the workpiece to be processed is placed on the first insulating layer, the second insulating layer is arranged below the first insulating layer, a heater is arranged in the second insulating layer, and is used for generating heat to heat the workpiece to be processed through the first insulating layer, and the base body is arranged at the bottom of the second insulating layer, and is used for supporting the first insulating layer and the second insulating layer. The electro static chuck at least and further comprises a heat conduction layer, wherein the heat conduction layer is arranged between the first insulating layer and the second insulating layer, and is made of materials, the coefficient of heat conduction of the materials is larger than or equal to that of aluminum, and the heat conduction layer is used for enabling the heat generated by the second insulating layer to be evenly conducted to different regions of the first insulating layer. According to the electro static chuck, the temperatures of different regions of the first insulating layer can be uniform, and damage caused by heat expansion to the electro static chuck can be reduced.
Description
Technical field
The present invention relates to semiconducter process, more particularly, relate to semiconducter process a kind of apparatus for processing plasma and electrostatic chuck thereof used.
Background technology
In the technical processs such as plasma etching or chemical vapour deposition (CVD), often adopt electrostatic chuck (Electro Static Chuck is called for short ESC) fix, support and transmit wafer (Wafer) and wait for workpiece.Electrostatic chuck is arranged in reaction chamber, and it adopts the mode of electrostatic attraction, and non-mechanical means fixes wafer, can reduce the mechanical loss possible to wafer, and electrostatic chuck is contacted completely with wafer, is conducive to heat conduction.
Existing electrostatic chuck generally includes the first insulating barrier and pedestal, in the first insulating barrier, is provided with DC electrode, and this DC electrode applies electrostatic attraction to wafer.
For making electrostatic chuck there is enough large programming rate, and then improve the uniformity of wafer engraving, in the first insulating barrier, can also lay a heater, in order to pass through electrostatic chuck heated chip.Or heater can form independently one deck, be arranged between the first insulating barrier and pedestal, by silica gel, bond together with the first insulating barrier and pedestal respectively.Heater is generally one group of resistance wire, and dish spirality, passes through a circuit supply by an AC power.
Yet, on the one hand, the heating effect conventionally due to the first insulating layer material with lower heat conductivity and heater center position is better than edge, the temperature in first each region of insulating barrier has obvious difference and even forms cold-zone and hot-zone, thereby to the heating of wafer, be also inhomogeneous, this technological effect by plasma etching brings bad impact.
On the other hand, heater is when the electrostatic chuck heated chip, and electrostatic chuck can produce thermal expansion, and causes each several part to have different thermal coefficient of expansions because of the difference of electrostatic chuck each several part material; Thermal expansion or the thermal deformation of the different amplitudes of electrostatic chuck each several part will cause damage to electrostatic chuck, make the phenomenons such as it cracks, misplaces, comes off.
Therefore, a kind of electrostatic chuck structure is developed in researcher's expectation, can realize the zones of different temperature homogeneous of the first insulating barrier, can reduce again damage electrostatic chuck being produced because of thermal expansion.
Summary of the invention
The object of the present invention is to provide a kind of electrostatic chuck, it is in the process by be processed of the first insulating barrier heating, can make the zones of different temperature of the first insulating barrier even, reduce the damage that the thermal expansion because of the different amplitudes of electrostatic chuck each several part produces electrostatic chuck simultaneously.
For achieving the above object, technical scheme of the present invention is as follows:
, for the reaction chamber of apparatus for processing plasma, for fixing to be processed, electrostatic chuck comprises following part: the first insulating barrier, and to be processed is placed on the first insulating barrier; The second insulating barrier, is positioned at the first insulating barrier below, and the second insulating barrier is built-in with a heater, for generation of heat, by the first insulating barrier, heats to be processed; Matrix, is positioned at the second insulating barrier below, for supporting the first insulating barrier and the second insulating barrier; Wherein, electrostatic chuck at least also comprises a heat conduction layer, is arranged between the first insulating barrier and the second insulating barrier, and the material that is not less than aluminium by the coefficient of heat conduction is made, and for the heat that the second insulating barrier is produced, to the zones of different of the first insulating barrier, conducts equably.
Preferably, electrostatic chuck also comprises: the first isolation adhesive linkage, by retractility material, made, and be arranged between heat conduction layer and the first insulating barrier, for adapting to the thermal expansion of different amplitudes between heat conduction layer and the first insulating barrier.
Preferably, electrostatic chuck also comprises: the second isolation adhesive linkage, by retractility material, made, between heat conduction layer and the second insulating barrier, for adapting to the thermal expansion of different amplitudes between heat conduction layer and the second insulating barrier.
The electrostatic chuck providing of the present invention, it by arranging a heat conduction layer between the first insulating barrier and heater, in process at heater by be processed of the first insulating barrier heating, the heat that heater is produced conducts equably to the zones of different of the first insulating barrier, thereby make the temperature homogeneous of the first insulating barrier zones of different, guaranteed the technological effect of plasma-treating technology.Meanwhile, this electrostatic chuck is also provided with first, second isolation adhesive linkage, to adapt to the thermal expansion of the different amplitudes of electrostatic chuck each several part, thereby has reduced the damage itself being produced because of electrostatic chuck thermal expansion or thermal deformation.And this electrostatic chuck is simple in structure, and cost is low, be easy to popularize.
The invention also discloses a kind of apparatus for processing plasma, for carrying out plasma-treating technology to be processed that is placed on wherein, comprising: reaction chamber, for carrying out therein plasma-treating technology; And electrostatic chuck, be arranged in reaction chamber, for fixing to be processed.
Accompanying drawing explanation
Fig. 1 illustrates the electrostatic chuck vertical section schematic diagram of first embodiment of the invention;
Fig. 2 illustrates the electrostatic chuck vertical section schematic diagram of second embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
As shown in Figure 1, first embodiment of the invention provides a kind of electrostatic chuck, and it comprises following part: matrix 101, the second insulating barrier 102, heat conduction layer 1031 and the first insulating barrier 104, bottom-up layering setting respectively.
Particularly, matrix 101 is electrostatic chuck bottom, and for supporting other parts, its inside is provided with many cooling liquid flowing channels 1011, for injecting cooling fluid, to electrostatic chuck, carries out cooling; The second insulating barrier 102 is positioned at matrix 101 tops, and its inside is provided with a heater 1021, for generation of heat, by heat conduction layer 1031 and the upwards conduction of the first insulating barrier 104, to heat, is held on to be processed of the first insulating barrier 104 tops; Heat conduction layer 1031 is positioned at the second insulating barrier 102 tops, for the heat that heater 1021 is produced, to the zones of different of the first insulating barrier 104, conducts equably; The first insulating barrier 104 is electrostatic chuck top, and its laid inside has a DC electrode (accompanying drawing is not shown), produces absorption affinity to fix to be processed after energising.
Wherein, the material of making of the first insulating barrier 104 comprises pottery; The material of making of the second insulating barrier 102 comprises aluminium oxide, and envelopes heater 1021; Heater 1021 is one group of resistance wire, and external AC power supply is to produce heat, and resistance wire is made by tungsten; Material or pottery that heat conduction layer 1031 is not less than aluminium by the coefficient of heat conduction are made.
Further, the material of main part of heat conduction layer is any in aluminium or aluminium alloy.
Further, the thickness of heat conduction layer is 1-2mm.
Because the heat conductivity of heat conduction layer material of main part is better, can guarantee that the heat that heater 1021 produces conducts equably to the zones of different of the first insulating barrier 104, and then make the temperature homogeneous of the first insulating barrier 104 zoness of different, avoided the appearance of cold-zone and hot-zone, make to be processed each position obtain uniform heating, thereby the technological effect that carries out to machined part plasma treatment has obtained remarkable improvement.
As shown in Figure 2, the electrostatic chuck that second embodiment of the invention provides for to improve on the basis of above-mentioned the first embodiment.It comprises following part from bottom to top: matrix 101, the second insulating barrier 102, the second isolation adhesive linkage 1033, heat conduction layer 1031, the first isolation adhesive linkage 1032 and the first insulating barrier 104.
Wherein, the structure of matrix 101, the second insulating barrier 102, heat conduction layer 1031 and the first insulating barrier 104 is identical with first embodiment of the invention with function.
It will be appreciated by those skilled in the art that electrostatic chuck structure is divided into multilayer, every layer to make material all not identical, for example, the first insulating barrier 104 is made by pottery, and the second insulating barrier 102 is mainly made by aluminium oxide, and the disclosed heat conduction layer 1031 of first embodiment of the invention is made by aluminium alloy.Layers of material all has different coefficient of thermal expansions, in heater 1021 energisings, produce after heat, bring thermal expansion or the thermal deformation of different amplitudes to the first insulating barrier 104, the second insulating barrier 102 and heat conduction layer 1031, and in the occasion that makes to be processed to be rapidly heated, the difference of thermal expansion or thermal deformation is more obvious, this will cause damage to electrostatic chuck body, makes the phenomenons such as it cracks, misplaces, comes off.
For overcoming above-mentioned phenomenon, the present embodiment is provided with respectively the first isolation adhesive linkage 1032 and the second isolation adhesive linkage 1033 in heat conduction layer 1031 upper and lower parts.
Wherein, the first isolation adhesive linkage 1032 is made by retractility material, is arranged between heat conduction layer 1031 and the first insulating barrier 104, for adapting to the thermal expansion of different amplitudes between heat conduction layer 1031 and the first insulating barrier 104.
The second isolation adhesive linkage 1033 is also made by retractility material, is arranged between heat conduction layer 1031 and the second insulating barrier 102, for adapting to the thermal expansion of different amplitudes between heat conduction layer 1031 and the second insulating barrier 102.
Retractility material can tolerate that the second insulating barrier 102, heat conduction layer 1031 and the first insulating barrier 104 carry out respectively appropriate thermal expansion, and mates thermal expansion or thermal deformation that between them, amplitude differs, thereby has avoided the damage to the generation of electrostatic chuck body.
Further, the material of making of first, second isolation adhesive linkage 1032,1033 also comprises silica gel, is respectively used to adhesion heat conducting shell 1031 and the first insulating barrier 104, and heat conduction layer 1031 and the second insulating barrier 102.
Further, the thickness of the first isolation adhesive linkage 1032 is less than 0.3mm, preferentially to guarantee the heat conducting homogeneity that makes progress, makes first insulating barrier 104 each regional temperature homogeneous.
Third embodiment of the invention (accompanying drawing is not shown) provides a kind of apparatus for processing plasma, and for substrate is carried out to plasma-treating technology, this treatment facility comprises a reaction chamber and first embodiment of the invention or the disclosed electrostatic chuck of the second embodiment.Gas ions treatment process carries out in reaction chamber, and substrate is adsorbed and is fixed on electrostatic chuck, is arranged in reaction chamber together.
This apparatus for processing plasma is heated each position of substrate by be provided with a heat conduction layer for electrostatic chuck uniformly, thereby plasma-treating technology effect is improved; And the electrostatic chuck each several part in this apparatus for processing plasma can be made respectively thermal expansion or the thermal deformation of different amplitudes, thereby reduced damage electrostatic chuck being produced because of thermal expansion.
Above-described is only the preferred embodiments of the present invention; described embodiment is not in order to limit scope of patent protection of the present invention; therefore the equivalent structure that every utilization specification of the present invention and accompanying drawing content are done changes, and in like manner all should be included in protection scope of the present invention.
Claims (13)
1. an electrostatic chuck, for the reaction chamber of apparatus for processing plasma, for fixing to be processed, described electrostatic chuck comprises following part:
The first insulating barrier, described to be processed is placed on described the first insulating barrier;
The second insulating barrier, is positioned at described the first insulating barrier below, and described the second insulating barrier is built-in with a heater, for generation of heat, by described the first insulating barrier, heats described to be processed;
Matrix, is positioned at described the second insulating barrier below, for supporting described the first insulating barrier and the second insulating barrier;
It is characterized in that, described electrostatic chuck at least also comprises a heat conduction layer, be arranged between described the first insulating barrier and described the second insulating barrier, the material or the pottery that by the coefficient of heat conduction, are not less than aluminium are made, and described heat conduction layer conducts to the zones of different of described the first insulating barrier equably for the heat that described heater is produced.
2. electrostatic chuck as claimed in claim 1, is characterized in that, it also comprises:
The first isolation adhesive linkage, is made by retractility material, is arranged between described heat conduction layer and described the first insulating barrier, for adapting to the thermal expansion of different amplitudes between described heat conduction layer and described the first insulating barrier.
3. electrostatic chuck as claimed in claim 2, is characterized in that, it also comprises:
The second isolation adhesive linkage, is made by retractility material, is arranged between described heat conduction layer and described the second insulating barrier, for adapting to the thermal expansion of different amplitudes between described heat conduction layer and described the second insulating barrier.
4. electrostatic chuck as claimed in claim 2 or claim 3, is characterized in that, the material of making of described heat conduction layer comprises aluminum or aluminum alloy.
5. electrostatic chuck as claimed in claim 2 or claim 3, is characterized in that, the thickness of described heat conduction layer is 1-2mm.
6. electrostatic chuck as claimed in claim 3, is characterized in that, the material of making of described first, second isolation adhesive linkage also comprises silica gel, is respectively used to bonding described heat conduction layer and the first insulating barrier, and described heat conduction layer and the second insulating barrier.
7. electrostatic chuck as claimed in claim 6, is characterized in that, the thickness of described the first isolation adhesive linkage is less than 0.3mm.
8. electrostatic chuck as claimed any one in claims 1 to 3, is characterized in that, the material of making of described the first insulating barrier comprises pottery.
9. electrostatic chuck as claimed any one in claims 1 to 3, is characterized in that, the material of making of described the second insulating barrier comprises aluminium oxide, described in make the coated described heater of material.
10. electrostatic chuck as claimed in claim 9, is characterized in that, described heater is one group of resistance wire, by tungsten, is made.
11. electrostatic chucks as claimed any one in claims 1 to 3, is characterized in that, described matrix comprises at least one cooling liquid flowing channel, for injecting cooling fluid, to described electrostatic chuck, carries out cooling.
12. 1 kinds of apparatus for processing plasma, for carrying out plasma-treating technology to be processed that is placed on wherein, comprising:
Reaction chamber, for carrying out therein described plasma-treating technology;
Electrostatic chuck as described in any one in claim 1 to 10, is arranged in described reaction chamber, for fixing described to be processed.
13. apparatus for processing plasma as claimed in claim 11, is characterized in that, described plasma-treating technology is plasma etch process, and described to be processed is substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210277352.2A CN103578899B (en) | 2012-08-06 | 2012-08-06 | Apparatus for processing plasma and electrostatic chuck thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210277352.2A CN103578899B (en) | 2012-08-06 | 2012-08-06 | Apparatus for processing plasma and electrostatic chuck thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103578899A true CN103578899A (en) | 2014-02-12 |
| CN103578899B CN103578899B (en) | 2016-08-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210277352.2A Active CN103578899B (en) | 2012-08-06 | 2012-08-06 | Apparatus for processing plasma and electrostatic chuck thereof |
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| Country | Link |
|---|---|
| CN (1) | CN103578899B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105448796A (en) * | 2014-09-29 | 2016-03-30 | 盛美半导体设备（上海）有限公司 | Chuck |
| TWI623051B (en) * | 2014-03-25 | 2018-05-01 | A plasma processing chamber and a base thereof | |
| CN111276424A (en) * | 2018-12-04 | 2020-06-12 | 南亚科技股份有限公司 | Etching apparatus and method of operating the same |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0541400A2 (en) * | 1991-11-07 | 1993-05-12 | Varian Associates, Inc. | Anti-stick electrostatic chuck for a low pressure environment |
| US20020075624A1 (en) * | 1999-05-07 | 2002-06-20 | Applied Materials, Inc. | Electrostatic chuck bonded to base with a bond layer and method |
| CN101471277A (en) * | 2007-12-27 | 2009-07-01 | 周星工程股份有限公司 | Electrostatic chuck and apparatus for treating substrate including the same |
| CN101512750A (en) * | 2006-08-29 | 2009-08-19 | 朗姆研究公司 | Method of tuning thermal conductivity of electrostatic chuck support assemply |
| CN101682937A (en) * | 2006-09-25 | 2010-03-24 | 东京毅力科创株式会社 | Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system |
| CN101677053A (en) * | 2008-09-19 | 2010-03-24 | Ips株式会社 | Electrostatic chuck and manufacturing method thereof |
| CN102230996A (en) * | 2009-10-07 | 2011-11-02 | 鸿富锦精密工业（深圳）有限公司 | Lens module |
| CN202230996U (en) * | 2011-09-01 | 2012-05-23 | 中微半导体设备(上海)有限公司 | Electrostatic chuck capable of carrying out regional temperature control |
-
2012
- 2012-08-06 CN CN201210277352.2A patent/CN103578899B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0541400A2 (en) * | 1991-11-07 | 1993-05-12 | Varian Associates, Inc. | Anti-stick electrostatic chuck for a low pressure environment |
| US20020075624A1 (en) * | 1999-05-07 | 2002-06-20 | Applied Materials, Inc. | Electrostatic chuck bonded to base with a bond layer and method |
| CN101512750A (en) * | 2006-08-29 | 2009-08-19 | 朗姆研究公司 | Method of tuning thermal conductivity of electrostatic chuck support assemply |
| CN101682937A (en) * | 2006-09-25 | 2010-03-24 | 东京毅力科创株式会社 | Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system |
| CN101471277A (en) * | 2007-12-27 | 2009-07-01 | 周星工程股份有限公司 | Electrostatic chuck and apparatus for treating substrate including the same |
| CN101677053A (en) * | 2008-09-19 | 2010-03-24 | Ips株式会社 | Electrostatic chuck and manufacturing method thereof |
| CN102230996A (en) * | 2009-10-07 | 2011-11-02 | 鸿富锦精密工业（深圳）有限公司 | Lens module |
| CN202230996U (en) * | 2011-09-01 | 2012-05-23 | 中微半导体设备(上海)有限公司 | Electrostatic chuck capable of carrying out regional temperature control |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI623051B (en) * | 2014-03-25 | 2018-05-01 | A plasma processing chamber and a base thereof | |
| CN105448796A (en) * | 2014-09-29 | 2016-03-30 | 盛美半导体设备（上海）有限公司 | Chuck |
| CN111276424A (en) * | 2018-12-04 | 2020-06-12 | 南亚科技股份有限公司 | Etching apparatus and method of operating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103578899B (en) | 2016-08-24 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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| CP01 | Change in the name or title of a patent holder |