CN102453887B - Plasma-assisted atomic layer deposition apparatus and controlling method thereof - Google Patents
Plasma-assisted atomic layer deposition apparatus and controlling method thereof Download PDFInfo
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- CN102453887B CN102453887B CN 201010511887 CN201010511887A CN102453887B CN 102453887 B CN102453887 B CN 102453887B CN 201010511887 CN201010511887 CN 201010511887 CN 201010511887 A CN201010511887 A CN 201010511887A CN 102453887 B CN102453887 B CN 102453887B
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Abstract
The invention discloses a plasma-assisted atomic layer deposition apparatus and a controlling method thereof. The plasma-assisted atomic layer deposition apparatus is composed of a plurality of reaction chambers and a movable screen board. Each reaction chamber comprises at least two reaction spaces and a movable substrate heating bearing module. The controlling method comprises steps that: the moving of the screen board is controlled, such that the screen board can be used for separating the two reaction spaces of each reaction chamber, or making the two reaction spaces communicate with eachother. Therefore, the surface of the substrate can be prevented from being polluted by micro-particles produced by cross reactions of gases with different preparation technologies.
Description
Technical field
The present invention relates to a kind of deposition apparatus, especially relate to a kind of plasma-assisted atomic layer deposition apparatus and control method thereof.
Background technology
Along with the exploitation of sophisticated semiconductor manufacture craft, the depth-to-width ratio of component structure has great breakthrough, and important technology development wherein is ald (atomic layer deposition, ALD) technology.Because ALD is applied to each industry gradually, for accelerate traditional heating formula ALD manufacture craft speed with in response to the growth Special Film, the technology of plasmaassisted ald (plasma enhanced atomic layerdeposition, PEALD) begins to be developed.The technology source of PEALD is from plasma auxiliary chemical vapor deposition (plasma enhanced chemical vapor deposition, PECVD) with the ALD sum total, although the obvious widespread adoption than ALD is arranged, relative plasma damage and manufacture craft gas cross reaction cause the problem of particle contamination chamber and base material still need be solved.
Membrane quality and volume production ability are the emphasis of existing foundries demand, and owing to ALD significantly promotes than other technologies on membrane quality, so equipment vendor stablizes a large amount of throughput and effort towards improving ALD.Yet in a large amount of throughput of aspiring for stability, it faces a difficult problem and is to make how fast substrate surface to adhere to evenly saturated precursor, and removes residual precursor and by product fully, and both are all relevant with the reaction chamber flow Field Design.Trend with claim after 2000 and business machine chamber designs, batch heating-type ALD reaction chamber full-time carrier gas or the reaction chamber blowing disturbances of adopting design more as can be known, although reducing, precursor concentration make the chemisorption time longer, but can guarantee that the disturbance of reaction chamber interior flow field increases, and improves surface adsorption probability and air blowing efficient.Single-chip ALD reaction chamber adopts compression and circular arc reaction chamber spatial design more at present, not only reduce the precursor rate of utilization, also promote air blowing efficient, also there is patent to propose to utilize the air curtain mode to reach and blocks manufacture craft gas and cleaning function, these purposes of design are being set up a reaction chamber space without the dead angle, reduce remaining precursor and reactant to the impact of membrane quality.The PEALD technology than heating-type ALD have that the manufacture craft temperature is low, base material and the zone of oxidation interface control is good, plastic rubber substrate surface adsorption power is good, membrane stress is low and precursor selectivity advantages of higher, believe it is that following soft sealed cell is made one of upper indispensable Manufacturing Techniques.
And in the prior art, disclose the device of a kind of PEALD such as the open application case US.Pub.No.2007/0128864 of the U.S., it flows out via the runner of plasma body shield and forms spiral air flow and be dispersed on the base material after jet plate (showerhead) top configuring plasma shield (plasmabaffle) and plasma screen (plasma screen) import gas in this zone and produce plasma dissociation.Another manufacture craft gas passes into by aperture via jet plate upper edge region and flows out on the base material.In addition, US Patent No. .Pat.No.6 and for example, 820,570 disclose a kind of PEALD devices, the jet plate tool two-piece type assembly in this technology, the mobile wherein ostiolate plate of a slice can change jet plate openings of sizes, can control airshed or distribution patterns.Make the z direction when the movable piece of not perforate and move, can be used to open or close jet plate passage.Cavity is separated into two portions with air dividing plate in addition, and Lower Half is imported by side direction for the first precursor; First half space can be reacted by importing base material by jet plate opening for the importing of the second precursor and with plasma dissociation.In addition, US Patent No. .Pat.No.7 and for example, 153,542 disclose a kind of PEALD device, it has a plurality of reaction chambers that can carry out different manufacture crafts, by a plurality of base materials of platform bearer movably, the mode that moves with sequence allows each base material finish required manufacture craft in each reaction chamber.And for example the open application case US.Pub.No.2008/0075858 of the U.S. discloses a kind of PALED device, and it comprises multiple reaction chamber at a reaction cavity, and each reaction chamber comprises the entrance configuration, and the reaction chamber reaction gases is not mixed with each other.Then utilize the rotating mechanism moving substrate by reaction chamber, sequence moving substrate growth ALD film.
Summary of the invention
The object of the present invention is to provide a kind of plasma-assisted atomic layer deposition apparatus and control method thereof, it has movably disrupter, to switch two reaction chamber spaces of mobile shield isolation, carry out respectively the precursor reaction so that base material moves back and forth in two reaction compartments, have influence on the result of manufacture craft with the mixing of avoiding different precursors.Because this device has a plurality of cavitys, therefore can carry out manufacture craft to many base materials simultaneously, utilize different cavity precursor reactant chamber the first manufacture craft and the second manufacture craft cycling program time difference, simultaneously the base material in this cavity is carried out film forming, enhance productivity, and shared air feed, bleed, Controlling System reduces equipment cost and takes up an area the space.
A further object of the present invention is to provide a kind of plasma-assisted atomic layer deposition apparatus, and it utilizes remote plasma, the active substance energy decrement after dissociating away from substrate surface and minimizing by the plasma dissociation zone of action and compound phenomenon again.In addition, this device is distinguished by runner so that precursor (manufacture craft gas) only flows into a reaction chamber and passage avoids cross reaction to produce particulate in chamber.
For reaching above-mentioned purpose, in one embodiment, the invention provides a kind of plasma-assisted atomic layer deposition apparatus, it includes: a plurality of reaction chambers, each reaction chamber have one first reaction compartment and one second reaction compartment; One blocker unit, it adjusts motion with this first reaction compartment and this second reaction compartment is separated or this first reaction compartment is communicated with this second reaction compartment by one; One first gas supply unit, it provides one first manufacture craft gas to each the first reaction compartment; One second gas supply unit, it provides one second gas to each the second reaction compartment; One removes gas supply unit, and it provides one to remove gas to each reaction chamber; And a plurality of heating carrier modules, it is arranged at respectively in these a plurality of reaction chambers, each heating carrier module by a up-and-down movement to select moving in this first reaction compartment or in this second reaction compartment.
In another embodiment, the present invention more provides a kind of plasma-assisted atomic layer deposition apparatus, and it includes: a pair of reaction chamber, and it has respectively one first reaction compartment and one second reaction compartment; One shield, it is by a rotational motion, and this to reacting chamber space produce one back and forth switch mobile, when making this shield enter wherein a reaction chamber, with this first reaction compartment and this second reaction compartment is separated or this first reaction compartment is communicated with this second reaction compartment; One first gas supply unit, it provides one first manufacture craft gas to this first reaction compartment; One second gas supply unit, it provides one second manufacture craft gas to this second reaction compartment; One removes gas supply unit, its provide one remove gas to this to reaction chamber; And a pair of heating carrier module, it is arranged at respectively this in the reaction chamber, each heating carrier module by a up-and-down movement to select moving in this first reaction compartment or in this second reaction compartment.
In another embodiment, the invention provides a kind of control method of plasma-assisted atomic layer deposition apparatus, it includes the following step: a plasma body assisted atomic layer deposition apparatus is provided, it has two reaction chambers and a blocker unit, each reaction chamber has one first reaction compartment and one second reaction compartment, this blocker unit, it adjusts motion with this first reaction compartment and this second reaction compartment is separated or this first reaction compartment is communicated with this second reaction compartment by one, have a heating load bearing unit in each reaction chamber, it carries a base material; Make this blocker unit intercept the first reaction compartment and one second reaction compartment in wherein the reaction chamber, wherein be obstructed every reaction chamber in base material in this first reaction compartment, be not obstructed every reaction chamber in base material then be positioned at this second reaction compartment; Carry out plasma body auxiliary atom layer deposition manufacture craft respectively at these two reaction chambers, with deposition one film on the base material in these two reaction chambers; This blocker unit is moved in another reaction chamber, wherein be obstructed every reaction chamber in base material in this first reaction compartment, be not obstructed every reaction chamber in base material then be positioned at this second reaction compartment; And repeat aforementioned two steps, until finish the mutual mobile number of times of this blocker unit.
Description of drawings
Figure 1A is plasma-assisted atomic layer deposition apparatus the first embodiment synoptic diagram of the present invention;
Figure 1B is the different embodiment synoptic diagram of blocker unit of the present invention from Fig. 1 C;
Fig. 2 A is plasma-assisted atomic layer deposition apparatus the second embodiment synoptic diagram of the present invention;
Fig. 2 B and Fig. 2 C are that another embodiment of blocker unit of the present invention moves synoptic diagram;
Fig. 3 is plasma-assisted atomic layer deposition apparatus the 3rd embodiment schematic top plan view of the present invention;
Fig. 4 A is other embodiment schematic top plan view of different number of cavities from Fig. 4 B;
Fig. 5 A is that cavity of the present invention disposes another embodiment schematic top plan view;
Fig. 5 B is the another embodiment synoptic diagram of blocker unit of the present invention;
Fig. 6 A and Fig. 6 B are plasma-assisted atomic layer deposition apparatus control method schematic flow sheet of the present invention;
Fig. 7 A and Fig. 7 B are that plasma-assisted atomic layer deposition apparatus the first embodiment of the present invention moves synoptic diagram.
The main element nomenclature
The 2-plasma-assisted atomic layer deposition apparatus
20,21-cavity
200,210-reaction chamber
2000,2100-the first reaction compartment
2001,2101-the second reaction compartment
201,211-pars convoluta structure
202,212-notch
203,213-induction trunk
204,214-bleed-off passage
22,22a-blocker unit
The 220-shield
The 221-rotary module
The 2210-motor
The 2211-supporting structure
222-lifting module
223-opening adjustment module
The 2230-blade
23-the first gas supply unit
24-the second gas supply unit
25-removes gas supply unit
26a, 26b-heat carrier module
27a, 27b-extension
270,271-plasma generating device
The 272-plasma source
The 28-vacuum pump
280,281,282-pipeline
The 283-pressure sensor
284-valve 7
290,291-pipeline
The 3-plasma-assisted atomic layer deposition apparatus
30～32,34～35-cavity
The 33-blocker unit
The 330-shield
The 331-rotary module
The 332-connection bracket
The 333-roller
334-transmission belt body
The 5-control method
500～519-step
90,91-base material
Embodiment
For making your juror further cognitive and understanding be arranged to feature of the present invention, purpose and function, hereinafter the spy describes the relevant thin bilge construction of device of the present invention and the theory reason of design, so that the juror can understand characteristics of the present invention, detailed description is presented below:
See also shown in Figure 1A, this figure is plasma-assisted atomic layer deposition apparatus the first embodiment synoptic diagram of the present invention.This plasma body assisted atomic layer deposition apparatus 2 includes two cavitys 20 and 21, one blocker unit 22, one first gas supply unit 23, one second gas supply unit 24, removes gas supply unit 25 and a pair of heating carrier module 26a and 26b.These two cavitys 20 and 21 abut mutually, have a reaction chamber 200 and 210 in each cavity 20 and 21.Each reaction chamber 200 and 210 has one first reaction compartment 2000 and 2100 and 1 second reaction compartment 2001 and 2101.In the present embodiment, have more extension 27a and a 27b on each reaction chamber 200 and 210, it couples mutually with this removing gas supply unit 25 and this second gas supply unit 24 respectively, the periphery of each extension 27a and 27b is provided with a plasma body generation device 270 and 271, and this plasma body generation device 270 and 271 is a remote plasma generation device.By remote plasma dissociation zone away from substrate surface, the active substance energy decrement after dissociating with minimizing and compound phenomenon again.Each remote plasma generation device 270 couples with a plasma source 272 mutually with 271.
In addition, each reaction chamber 200 with 210 with position that this extension is connected on have a pars convoluta structure 201 and 211 so that this second reaction compartment 2001 and 2101 and the upper end have the effect of constriction, it is with being intended to avoid the second manufacture craft gas to enter this reaction chamber 200 and at 210 o'clock, because vacuum environment is so that gas temperature descends and produce the phenomenon of condensing, and then have influence on the effect of manufacture craft.Outer rim in this reaction chamber 200 and 210 has more a notch 202 and 212, has more an induction trunk 203 and 213 and one bleed-off passage 204 and 214 with the first reaction compartment 2000 of reaction chamber 200 and 210 and 2100 corresponding chamber walls below this notch 202 and 212.Wherein this induction trunk 203 couples by gas piping 230 and this first gas supply unit 23 mutually with 213, and this bleed-off passage 204 couples by gas piping 280 and a vacuum pump 28 mutually with 214.In addition, in each cavity 20 and 21 also by a pipeline 281 and 282 and this vacuum pump 28 couple mutually.In the present embodiment, more be coupled with pressure sensor 283 and valve 284 on the pipeline 280,281 and 282.This blocker unit 22, it can be adjusted in the reaction chamber 200 or 210 of the cavity 20 be moved into wherein or 21 by one.
Take Figure 1A as example, blocker unit 22 is with this first reaction compartment 2000 in this reaction chamber 200 and this second reaction compartment 2001 is separated or this first reaction compartment 2000 is communicated with this second reaction compartment 2001.In the present embodiment, as shown in Figure 1B, this blocker unit 22 has more a shield 220 and a rotary module 221, this rotary module 221 by one rotatablely move control this shield 220 enter this reaction chamber 200 or leave this reaction chamber 200 via this notch 202.In the present embodiment of Figure 1B, this rotary module 221 consists of by motor 2210 and the supporting structure 2211 that supports this shield, its rotary power that can provide by motor drives shield 220 and rotates and enter via the notch 202 in the reaction chamber 200, and intercepts in this reaction chamber 200 the first reaction compartment 2000 and the second reaction compartment 2001; At this moment, the first reaction compartment 2100 in another reaction chamber 210 and 2101 of the second reaction compartments keep connected state.In addition, in another embodiment, shown in Fig. 1 C, this blocker unit 22 more can couple mutually with lifting module 222, and the shield of controlling these blocker unit 22 by this lifting module 222 carries out the up-and-down movement of Z direction.The purpose of this up-and-down movement is for providing the chamber wall in this shield and this reaction chamber to keep airtight, to avoid manufacture craft gas in the first reaction compartment to contact with manufacture craft gas in the second reaction compartment and to produce reaction.
Return shown in Figure 1A, this first gas supply unit 23, it provides one first manufacture craft gas to each the first reaction compartment 2000 and 2100.This second gas supply unit 24, it provides one second manufacture craft gas to each the second reaction compartment 2001 and 2101.This removes gas supply unit 25, and it provides one to remove gas to each reaction chamber 200 and 201.In the present embodiment, this removing gas supply unit 25 enters in this reaction chamber 200 and 210 via same pipeline 290 and 291 with this second gas supply unit 24.Although be noted that the second gas supply unit 24 and these removing gas supply unit 25 same pipelines shown in Figure 1A, also can be the pipeline that separates; In addition, although among Figure 1A, this removing gas supply unit 25 enters in this reaction chamber via this extension 27a and 27b jointly with this second gas supply unit 23, not take this position as restriction.
This a plurality of heating carrier module 26a and 26b, it is arranged at respectively in these a plurality of reaction chambers 200 and 210, each heating carrier module 26a or 26b by a up-and-down movement to select to move to this first reaction compartment 2000 with 2100 in interior or this second reaction compartment 2001 and 2101.This heating carrier module 26a and 26b can provide carrying one base material 90 and 91, and this heating carrier module 26a and 26b can provide heat energy to increase the temperature of base material 90 and 91.The lifting of this heating carrier module 26a and 26b and the mechanism of heating belong to prior art, do not do at this and give unnecessary details.See also shown in Fig. 2 A, this figure is plasma-assisted atomic layer deposition apparatus the second embodiment synoptic diagram of the present invention.In the present embodiment, basically similar with Figure 1A, difference be the structure of blocker unit.Blocker unit 22a in the present embodiment has a plurality of opening adjustment modules 223, and it is arranged at respectively in each reaction chamber 200 and 201.Shown in Fig. 2 B, each opening adjustment module 223 has a plurality of blades 2230, to adjust motion by this this first reaction compartment and this second reaction compartment is separated, or this first reaction compartment is communicated with this second reaction compartment, shown in Fig. 2 C.The control blade 2230 of this opening adjustment module 223 is opened and the mechanism of the mode of closing such as the aperture size of control camera lens, and it belongs to existing technology, does not do at this and gives unnecessary details.
See also shown in Figure 3ly, this figure is plasma-assisted atomic layer deposition apparatus the 3rd embodiment schematic top plan view of the present invention.In the present embodiment, mainly be the quantity that will emphasize this cavity be not take two as restriction, plural quantity also can be implemented.The plasma-assisted atomic layer deposition apparatus in Fig. 33 for example, the quantity of this cavity 30～32 is three, this moment, 33 of this blocker unit had two shields 330 and a rotary module 331.This two shield 330 connects to have connection bracket 332 and is connected with this rotary module 331, in order to allow the first reaction compartment and second reaction compartment of the reaction chamber in each cavity 30～32 operate in turn, in the embodiments of figure 3, two cavitys 30 wherein are mutually corresponding with 31, and another cavity 32 is then furnished in the mid-way of this two cavity 30 and 31.The angle of this two shield 330 is the angle of 180 degree, therefore rotatablely move (present embodiment is each 90-degree rotation) that provide by this rotary module 331, this two shield 330 can be rotated simultaneously, and then control the first reaction compartment in the reaction chamber in each cavity 30～32 and the second reaction compartment is supplied manufacture craft gas in turn and base material reacts.Shown in Fig. 4 A and Fig. 4 B, this figure is other embodiment schematic top plan view of different number of cavities.Wherein Fig. 4 A is four cavitys 30～32 and 34 o'clock configuration and the relation of blocker unit 33, and Fig. 4 B then is five cavitys 30～32 and 34～35 o'clock configuration and the relation of blocker unit 33.By the embodiment of front, can learn number of cavities of the present invention not take even number or odd number as restriction, the people who is familiar with technique can be according to spirit of the present invention, according to its needed quantity with configuration.
Shown in Fig. 5 A, this figure is that cavity of the present invention disposes another embodiment schematic top plan view.In the present embodiment, the distributing style that is configured to a horizontal type straight line of a plurality of cavitys 36～39 is so that the reaction chamber in the cavity 36～39 is a horizontal type linear arrangement.Shown in Fig. 5 B, under the configuration frame of Fig. 5 A cavity, this blocker unit 33a has a plurality of shields 330, and it is arranged on the transmission belt body 334, has a distance between adjacent shield.Have roller 333 in the transmission belt body 334, adjust motion to produce, the adjustment campaign of this moment is the linear displacement motion.Because transmission belt body 334 circlewise, therefore these a plurality of shields can carry out linear loopy moving.Add 330 of adjacent shields and have spacing, therefore can so that the first reaction compartment in each reaction chamber and the second reaction compartment in turn with reaction chamber in base material react.
See also shown in Fig. 6 A and Fig. 6 B, this figure is plasma-assisted atomic layer deposition apparatus control method schematic flow sheet of the present invention.This control method 5 includes the following step, at first provides a plasma body assisted atomic layer deposition apparatus with step 500, and this plasma body assisted atomic layer deposition apparatus can be the device shown in Figure 1A, Fig. 2 A, Fig. 3, Fig. 4 A, Fig. 4 B or Fig. 5 A.In the present embodiment, explain with the plasma-assisted atomic layer deposition apparatus shown in Figure 1A.Then carrying out step 501 is loaded in base material respectively on the heating carrier module 26a and 26b in each cavity.Can utilize mechanical arm or other self-propagating devices as for how base material being loaded into the heating carrier module, it belongs to existing technology, does not do at this and gives unnecessary details.Then, the base material 90 and 91 that heats respectively carried with the heating carrier module 26a in each reaction chamber 200 and 210 of step 502 control and 26b is to preset temperature.
Then carry out step 503, pass into the first precursor in the first reaction compartment 2000 in the reaction chamber 200, that is provide the first manufacture craft gas to enter in this first reaction compartment 2000 via the first gas supply unit 23.Then pass into step 504 and remove gas (purge gas) and enter in the first reaction compartment 2000 in this reaction chamber 200.Then carry out step 505 shield is switched in the reaction chamber 210 of another cavity 21, and the first reaction compartment 2100 and second reaction compartment 2101 of reaction chamber 210 is isolated, to form the state shown in Fig. 7 A.Step 505 is the initial step of cycling program.The following stated is that the reaction compartment that reaction chamber 200 and 210 has begins to carry out other response procedures simultaneously as dynamic program, just carries out next program after all programs are finished.The part of reaction chamber 200 at first is described, utilizes heating carrier module 26a that the base material 90 in the reaction chamber is moved in the second reaction compartment 2001 with step 506.Then with step 507 in the second reaction compartment 2001 in pass into the second precursor, that is enter this second reaction compartment 2001 by the second gas supply unit 24 supplies the second manufacture craft gas.Through the plasmaassisted ald after for some time, again with step 508, pass into removing gas at the second reaction compartment 2001 of this reaction chamber 200.
And then, move to the position corresponding with this first reaction compartment 2000 with step 509 in control this heating carrier module 26a decline.Carry out step 506～509 in, pass into the first precursor with first reaction compartment 2100 of step 510 in reaction chamber 210, that is provide the first manufacture craft gas with this first gas supply unit 23.Through the plasmaassisted ald after for some time, again with step 511, pass into removing gas in the first reaction compartment 2100 of reaction chamber 210.Be noted that, reaction chamber 200 carry out step 506～and 509 o'clock, 210 of reaction chambers carry out step 510 synchronously to 511, by the time carry out complete after, with step 512 that the reaction chamber 200 that shield switches to cavity 20 is interior so that this first reaction compartment 2000 and the second reaction compartment 2001 are separated mutually, to form the state shown in Fig. 7 B again.
Because the base material in the reaction chamber 200 has been finished the technological cycle of producing once, reaction chamber 210 is then not yet finished, and therefore then carry out step 513, utilizes heating carrier module 26b that the base material 91 in the reaction chamber 210 is moved in the second reaction compartment 2101.Then with step 514 in the second reaction compartment 2101 in pass into the second precursor, that is enter this second reaction compartment 2101 by the second gas supply unit 24 supply manufacture craft gases.Through the plasmaassisted ald after for some time, again with step 515, pass into removing gas in the second reaction compartment 2101 of this reaction chamber 210.And then, move to the position corresponding with this first reaction compartment 2100 with step 516 in control this heating carrier module 26b decline.By step 503 to step 516, then be the program of a complete cycle that reaction chamber 200 and 210 is carried out, declare whether reaching the number of times of manufacture craft circulation with step 517 subsequently, if not words then get back to step 503, again carry out step 503 to step 516.Otherwise, if arrived the manufacture craft number of times, then carry out step 518, carry out the base material cooling.Take out base material 90 and 91 with step 519 more at last.
Above-described only is embodiments of the invention, when can not with the restriction scope of the invention.The equalization of namely generally doing according to claim of the present invention changes and modifies, and will not lose main idea of the present invention place, does not also break away from the spirit and scope of the present invention, and the former capital should be considered as further status of implementation of the present invention.
Claims (15)
1. plasma-assisted atomic layer deposition apparatus, it includes:
A plurality of reaction chambers, each reaction chamber have the first reaction compartment and the second reaction compartment;
Blocker unit, it adjusts motion with this first reaction compartment and this second reaction compartment is separated or this first reaction compartment is communicated with this second reaction compartment by one;
The first gas supply unit, it provides one first manufacture craft gas to each the first reaction compartment;
The second gas supply unit, it provides one second manufacture craft gas to each the second reaction compartment;
Remove gas supply unit, it provides one to remove gas to each reaction chamber; And
A plurality of heating carrier modules, it is arranged at respectively in these a plurality of reaction chambers, each heating carrier module by a up-and-down movement to select moving in this first reaction compartment or in this second reaction compartment.
2. plasma-assisted atomic layer deposition apparatus as claimed in claim 1, wherein also has an extension on each reaction chamber, it couples mutually with this removing gas supply unit and this second gas supply unit respectively, the periphery of each extension is provided with a plasma body generation device, and this plasma body generation device is a remote plasma generation device.
3. plasma-assisted atomic layer deposition apparatus as claimed in claim 1, wherein has a notch in each reaction chamber, and this blocker unit also has at least one shield and a rotary module, this rotary module enters this reaction chamber or leaves this reaction chamber via this notch by control this at least one shield that rotatablely moves, with separation or be communicated with this first reaction compartment and this second reaction compartment.
4. plasma-assisted atomic layer deposition apparatus as claimed in claim 1, wherein this blocker unit also has a plurality of opening adjustment modules, it is arranged at respectively in each reaction chamber, each opening adjustment module has a plurality of blades, by this adjustment campaign this first reaction compartment and this second reaction compartment are separated or this first reaction compartment is communicated with this second reaction compartment.
5. plasma-assisted atomic layer deposition apparatus as claimed in claim 2 wherein has a pars convoluta structure on this reaction chamber and the position that this extension is connected.
6. plasma-assisted atomic layer deposition apparatus as claimed in claim 1, wherein a side of each the first reaction compartment couples mutually with this first gas supply unit, and also has a bleed-off passage on each first reaction compartment.
7. plasma-assisted atomic layer deposition apparatus as claimed in claim 1, wherein these a plurality of reaction chambers are a horizontal type linear arrangement, and this blocker unit has a plurality of shields, and it is arranged on the transmission belt body, has a distance between adjacent shield.
8. plasma-assisted atomic layer deposition apparatus, it includes:
A pair of reaction chamber, it has respectively one first reaction compartment and one second reaction compartment;
Shield, it is by a rotational motion, back and forth switching is mobile and at this reacting chamber space is produced one, when making this shield enter wherein a reaction chamber, this first reaction compartment and this second reaction compartment are separated and this first reaction compartment of another reaction chamber and this second reaction compartment are communicated with, or this first reaction compartment is communicated with and with this first reaction compartment and the separation of this second reaction compartment of another reaction chamber with this second reaction compartment;
The first gas supply unit, it provides one first manufacture craft gas to this first reaction compartment;
The second gas supply unit, it provides one second manufacture craft gas to this second reaction compartment;
Remove gas supply unit, its provide one remove gas to this to reaction chamber; And
A pair of heating carrier module, it is arranged at respectively this in the reaction chamber, each heating carrier module by a up-and-down movement to select moving in this first reaction compartment or in this second reaction compartment.
9. plasma-assisted atomic layer deposition apparatus as claimed in claim 8, wherein each reaction chamber also has an extension, it couples mutually with this removing gas supply unit and this second gas supply unit respectively, the periphery of each extension is provided with a plasma body generation device, and this plasma body generation device is a remote plasma generation device.
10. plasma-assisted atomic layer deposition apparatus as claimed in claim 9 wherein has a pars convoluta structure on this reaction chamber and the position that this extension is connected.
11. plasma-assisted atomic layer deposition apparatus as claimed in claim 1, wherein a side of each the first reaction compartment couples mutually with this first gas supply unit, and also has a bleed-off passage on each first reaction compartment.
12. the control method of a plasma-assisted atomic layer deposition apparatus, it includes the following step:
One plasma body assisted atomic layer deposition apparatus is provided, it has two reaction chambers and a blocker unit, each reaction chamber has one first reaction compartment and one second reaction compartment, it can provide respectively one first manufacture craft gas and the second manufacture craft gas to carry out the reaction of plasmaassisted ald, this blocker unit, it adjusts motion with this first reaction compartment and this second reaction compartment is separated and this first reaction compartment of another reaction chamber and this second reaction compartment are communicated with by one, or this first reaction compartment is communicated with this second reaction compartment and this first reaction compartment of another reaction chamber and this second reaction compartment are separated, have a heating load bearing unit in each reaction chamber, it carries a base material;
Make this blocker unit intercept the first reaction compartment and one second reaction compartment in wherein the reaction chamber, wherein be obstructed every reaction chamber in base material in this first reaction compartment, be not obstructed every reaction chamber in base material then be positioned at this second reaction compartment;
Carry out plasma body auxiliary atom layer deposition manufacture craft respectively at these two reaction chambers, with deposition one film on the base material in these two reaction chambers;
This blocker unit is moved in another reaction chamber, wherein be obstructed every reaction chamber in base material in this first reaction compartment, be not obstructed every reaction chamber in base material then be positioned at this second reaction compartment; And
Repeat aforementioned two steps, until finish the mutual mobile number of times of this blocker unit.
13. the control method of plasma-assisted atomic layer deposition apparatus as claimed in claim 12 wherein is subjected to this plasma body auxiliary atom layer deposition manufacture craft in the reaction chamber that this blocker unit intercepts also to include the following step:
Provide in first reaction compartment of this first manufacture craft gas in the reaction chamber that intercepted by this blocker unit; And
Be subjected to base material in the reaction chamber that this blocker unit intercepts after plasmaassisted ald reaction specified time, provide one to remove gas and enter in this first reaction compartment.
14. the control method of plasma-assisted atomic layer deposition apparatus as claimed in claim 12 wherein is not subjected to this plasma body auxiliary atom layer deposition manufacture craft in the reaction chamber that this blocker unit intercepts also to include the following step:
Base material is moved in the second reaction compartment that is not subjected in the reaction chamber that this blocker unit intercepts;
Provide in second reaction compartment of this second manufacture craft gas in the reaction chamber that not intercepted by this blocker unit;
Be not subjected to base material in the reaction chamber that this blocker unit intercepts after plasmaassisted ald reaction specified time, provide one to remove gas and enter in this second reaction compartment; And
Base material is moved in the first reaction compartment that is not subjected in the reaction chamber that this blocker unit intercepts.
15. the control method of plasma-assisted atomic layer deposition apparatus as claimed in claim 12, it also includes and utilizes this heating load bearing unit with the base material heating that the carries step to preset temperature.
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| US20160010207A1 (en) * | 2013-04-03 | 2016-01-14 | Dongjun Wang | Plasma-Enhanced Atomic-Layer Deposition System and Method |
| CN113491001B (en) * | 2019-01-02 | 2022-10-18 | 长江存储科技有限责任公司 | Semiconductor processing apparatus and control method thereof |
| CN111575677B (en) * | 2020-04-24 | 2021-11-02 | 长江存储科技有限责任公司 | Atomic layer deposition apparatus and 3D memory device |
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| KR20100010867A (en) * | 2008-07-23 | 2010-02-02 | 주식회사 뉴파워 프라즈마 | Multi-workpiece processing system and workpiece processing mehtod thereof |
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