CN112853321A

CN112853321A - ALD processing equipment and processing method

Info

Publication number: CN112853321A
Application number: CN202110075573.0A
Authority: CN
Inventors: 万军; 王辉; 廖海涛; 王斌
Original assignee: Wuxi Yijing Semiconductor Technology Co ltd
Current assignee: Wuxi Yijing Semiconductor Technology Co ltd
Priority date: 2021-01-20
Filing date: 2021-01-20
Publication date: 2021-05-28

Abstract

The invention relates to an ALD processing device and a processing method. The reaction chamber of the reactor of the processing equipment is arranged in the vacuum chamber, the bottom of the reaction chamber is provided with an air inlet channel, an air outlet channel and a first material port, the air inlet channel and the air outlet channel are oppositely arranged by using the central line of the bottom of the reaction chamber, the first material port is arranged between the air inlet channel and the air outlet channel, and the side surface of the vacuum chamber is provided with a second material port; the lifting device is arranged on the reactor, the output end of the lifting device stretches vertically, a sealing cover is arranged on the output end of the lifting device and is arranged below the reaction chamber, and the sealing cover can be used for sealing a first material port of the reaction chamber in an operable manner; the feeding cavity is arranged on the side portion of the reactor, a sealing door capable of opening and closing the second material opening is arranged between the feeding cavity and the reactor, and a conveying device is arranged in the feeding cavity and can be used for transferring the base body to the sealing cover in an operable mode. The invention can ensure the forming quality and consistency of the deposited film.

Description

ALD processing equipment and processing method

Technical Field

The invention relates to the technical field of semiconductor nano-film deposition, in particular to ALD (atomic layer deposition) processing equipment and a processing method.

Background

With the increasing complexity of ICs, the characteristic dimensions of mosfet devices in silicon-based semiconductor integrated circuits will reach the nanometer scale according to the well-known moore's law and the international roadmap for semiconductor technology development published by the international association in the semiconductor industry. Atomic Layer Deposition (ALD) has the characteristics of excellent three-dimensional conformality, large-area uniformity, accurate sub-monolayer film thickness control and the like, and is favored by the microelectronic industry and the nano-technology field.

In the prior art, the atomic layer deposition processing has the technical scheme that: the substrate is placed in a sealed reactor and a vapor phase precursor source is alternately introduced into the reactor to chemisorb and react to form a deposited film on the substrate.

In the technical scheme for realizing the invention, the applicant finds that the prior art has at least the following defects:

in the prior art, the technical scheme that the gas-phase precursor source is alternately and impulsively introduced into the reactor is difficult to ensure that the precursor source covers the whole matrix completely, pinholes are easy to form and the like, so that the precursor source is not uniformly contacted with the matrix, the uniformity of a deposited film is poor, the quality is difficult to ensure, and meanwhile, due to incomplete reaction, the large amount of the precursor source is filled, so that the precursor source is greatly remained, the film forming efficiency is low, the period is long, and the waste of the precursor source is caused.

Therefore, improvements in the prior art are needed.

Disclosure of Invention

The invention provides ALD processing equipment and a processing method, which solve or partially solve the technical problems that in the prior art, the uniformity of a deposited film is poor, the quality is difficult to guarantee, the film forming efficiency is low, the period is long, and the waste of a precursor source is caused.

The technical scheme of the invention is as follows:

in one aspect, the present invention provides an ALD processing apparatus comprising:

the reactor comprises a vacuum chamber and a reaction chamber, the reaction chamber is arranged in the vacuum chamber, the bottom of the reaction chamber is provided with an air inlet channel, an air outlet channel and a first material port, the air inlet channel and the air outlet channel are arranged oppositely by using the central line of the bottom of the reaction chamber, the first material port is arranged between the air inlet channel and the air outlet channel, and the side surface of the vacuum chamber is provided with a second material port;

the lifting device is arranged on the reactor, the output end of the lifting device stretches vertically, a sealing cover is arranged on the output end of the lifting device and arranged below the reaction chamber, and the sealing cover can be used for sealing a first material opening of the reaction chamber in an operable manner;

the pay-off cavity, the pay-off cavity sets up the lateral part of reactor, the pay-off cavity with be provided with between the reactor and can with the sealing door of second material mouth switching, be provided with conveyor in the pay-off cavity, conveyor is operatively with the base member transport extremely on the closing cap.

Furthermore, the air inlet channels are in a hole shape, the number of the air inlet channels is multiple, and the multiple air inlet channels are arranged on one side of the bottom of the reaction chamber;

the gas outlet channel is porous, the gas outlet channel is also provided with a plurality of gas outlet channels, and the gas outlet channels are arranged on the other side of the bottom of the reaction chamber.

Furthermore, the air inlet channels are provided with a plurality of groups, the air inlet channels are sequentially arranged, each air inlet channel is arc-shaped, and the aperture of each air inlet channel is sequentially reduced towards the central line close to the bottom of the reaction chamber;

the air outlet channel is provided with a plurality of groups, the air outlet channels are sequentially arranged, each group of air outlet channels is arc-shaped, and each group of air outlet channels is close to the central line of the bottom of the reaction chamber in the aperture direction.

Furthermore, two gas homogenizing plates are arranged in the reaction chamber, the two gas homogenizing plates are arranged oppositely to the central line of the bottom of the reaction chamber, the two gas homogenizing plates are arranged between the gas inlet channel and the gas outlet channel, the reaction chamber is divided into the gas inlet chamber, the reaction chamber and the gas outlet chamber by the two gas homogenizing plates, and each gas homogenizing plate is provided with a plurality of through holes.

Furthermore, a transfer chamber is fixedly arranged at the bottom of the reaction chamber, the top of the transfer chamber is open, the bottom of the reaction chamber covers the bottom of the transfer chamber, two partition plates are arranged in the transfer chamber, the transfer chamber is divided into a first chamber, a second chamber and a third chamber by the two partition plates, the air inlet channel is communicated with the first chamber, the air outlet channel is communicated with the third chamber, an air inlet main hole is arranged at the bottom of the first chamber, and an air outlet main hole is arranged at the bottom of the third chamber;

and a third material port consistent with the first material port is arranged in the middle of the transfer chamber, and the third material port is communicated with the first material port.

Further, the processing equipment further comprises:

a first heater disposed below the bottom of the lid, an output of the first heater acting on the lid;

a second heater disposed between an outer sidewall of the reaction chamber and an inner sidewall of the vacuum chamber, an output of the second heater acting on the sidewall of the reaction chamber;

a third heater disposed between the top of the reaction chamber and the top of the vacuum chamber, the third heater acting on the top of the reaction chamber.

Furthermore, the processing equipment also comprises a first heat reflection assembly, a second heat reflection assembly and a third heat reflection assembly,

wherein:

the first heat reflecting assembly is disposed between the first heater and the bottom of the vacuum chamber;

the second heat reflecting assembly is disposed between the second heater and a side of the vacuum chamber;

the third heat reflecting assembly is disposed between the third heater and the top of the vacuum chamber.

Optionally, the conveying device comprises a bottom plate and a telescopic mechanism, the fixed end of the telescopic mechanism is fixedly arranged on the bottom plate, the telescopic end of the telescopic mechanism can stretch out and draw back along the horizontal direction, and an electromagnet is arranged at the end of the telescopic mechanism.

Optionally, the conveying device comprises a bottom plate and two oppositely arranged telescopic mechanisms, a fixed end of each telescopic mechanism is fixedly arranged on the bottom plate, and a telescopic end of each telescopic mechanism can extend and retract along the horizontal direction;

the processing equipment further comprises a frame for bearing the base body, the frame is movably arranged on the bottom plate, supporting ear plates are arranged on two sides of the frame in the width direction, and the bottoms of the supporting ear plates are correspondingly supported by the telescopic ends of the telescopic mechanisms.

In another aspect, the present invention provides an ALD processing method performed in the ALD processing apparatus described above, the processing method comprising:

providing a substrate, and placing the provided substrate in the feeding chamber;

operating the sealing door and the conveying device in sequence to open the second material opening, so that the substrate is transferred to the sealing cover from the feeding cavity;

operating the conveying device and the sealing door in sequence to enable the conveying device to return, wherein the sealing door seals the second material opening;

operating the lifting device, arranging a sealing cover at a first material port of the reaction chamber, and positioning the substrate in the sealed reaction chamber;

vacuumizing the reactor;

injecting a precursor source from an air inlet channel of the reaction chamber, and after the precursor source sweeps the substrate in the reaction chamber, discharging the substrate from an air outlet channel of the reaction chamber to carry out ALD processing on the substrate;

operating the lifting device to move the sealing cover downwards, and synchronously moving the processed base body and the sealing cover downwards;

and operating the sealing door and the conveying device in sequence to open the second material port, and transferring the processed base body into the feeding cavity by the lifting device.

One or more technical schemes provided by the invention at least have the following technical effects or advantages:

in the invention, the precursor source is injected into the reaction chamber from the gas inlet channel of the reaction chamber and is discharged from the gas outlet channel of the reaction chamber, and the gas inlet channel and the gas outlet channel are oppositely arranged by the central line of the bottom of the reaction chamber, so the fluid field in the reaction chamber is laminar flow, the gas inlet and the gas exhaust of the precursor source are directly communicated with the reaction chamber, the risk of leakage of the precursor source at the butt joint is avoided, the precursor source flows in the reaction chamber, the volume of the reaction chamber can be reduced, the length of uniform gas is increased, the uniformity of gas flow is improved, the phenomenon of gas disorder is reduced, the precursor source can be ensured to completely cover the whole substrate, the contact between the precursor source and the substrate is uniform, the uniformity of a deposited film is improved, the forming quality and the uniformity of the deposited film are ensured, the film forming efficiency is high, the period is short, and the utilization rate of the precursor source is improved, is suitable for batch production and has good practical value.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

FIG. 1 is a schematic view of an ALD process apparatus disclosed in example 1;

FIG. 2 is a schematic structural diagram of a vacuum chamber of the present embodiment;

FIG. 3 is a schematic structural diagram of a reaction chamber according to the present embodiment;

FIG. 4 is a schematic top view of the reaction chamber of the present embodiment;

FIG. 5 is a schematic structural view of a reaction chamber according to example 3;

FIG. 6 is a schematic view of the conveying apparatus and the frame on which the substrate is mounted in the present embodiment;

FIG. 7 is a schematic flow chart illustrating an ALD process of the present embodiment;

FIG. 8 is a schematic view of a state where a substrate is in a reaction chamber.

Detailed Description

It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.

Example 1:

the embodiment discloses an ALD processing apparatus.

FIG. 1 is a schematic structural diagram of an ALD process apparatus disclosed in embodiment 1, wherein the ALD process apparatus of the embodiment includes a reactor a, a lifting device b, and a feeding chamber c, in conjunction with FIG. 1.

Referring to fig. 1, a reactor a of the present embodiment includes a vacuum chamber 1 and a reaction chamber 2, the reaction chamber 2 is disposed in the vacuum chamber 1, fig. 2 is a schematic structural diagram of the vacuum chamber of the present embodiment, fig. 3 is a schematic structural diagram of the reaction chamber of the present embodiment, and referring to fig. 1 to fig. 3, a first material port 28 is disposed at a bottom of the reaction chamber 2 of the present embodiment, and a second material port 3 is disposed on a side surface of the vacuum chamber 1.

Referring to fig. 1, the lifting device b of this embodiment is disposed on the reactor a, the output end of the lifting device b extends and retracts vertically, the output end of the lifting device b is disposed with a sealing cover 4, and the sealing cover 4 is operable to seal the first material opening 28 at the bottom of the reaction chamber 2, so that the reaction chamber 2 forms a sealed cavity.

Referring to fig. 1, a feeding chamber c of the present embodiment is disposed at a side portion of the reactor a, a sealing door 5 for opening and closing the second material port 3 is disposed between the feeding chamber c and the reactor a, and a conveying device 6 is disposed in the feeding chamber c, and the feeding chamber c and the reactor a can be collectively transferred to the cap 4 by operating the conveying device 6.

When the embodiment is implemented, place the base member in pay-off cavity c earlier, then operate conveyor 6, transport the base member to closing cap 4 on, operation sealing door and elevating gear b afterwards, it is sealed with second material mouth and reaction chamber 2 respectively, handle the reactor evacuation again, can carry out the ALD processing of base member, convenient operation, degree of automation is high.

Example 2:

this example provides a reaction chamber suitable for use in the ALD processing apparatus of example 1.

Fig. 4 is a schematic structural diagram of the reaction chamber of the present embodiment, and with reference to fig. 3 and 4, a gas inlet channel 8 and a gas outlet channel 9 are formed at the bottom of the reaction chamber 2 of the present embodiment, and the gas inlet channel 8 and the gas outlet channel 9 are disposed opposite to each other with respect to a center line of the bottom of the reaction chamber 2.

In the embodiment, the precursor source is injected into the reaction chamber 2 from the gas inlet channel 8 of the reaction chamber 2 and is discharged from the gas outlet channel 9 of the reaction chamber 2, because the gas inlet channel 8 and the gas outlet channel 9 are oppositely arranged by the central line of the bottom of the reaction chamber 2, the fluid field in the reaction chamber 2 is laminar, and the gas inlet and the gas exhaust of the precursor source are directly communicated with the reaction chamber, thereby avoiding the risk of the precursor source leaking at the butt joint part, in addition, the flowing direction of the precursor source in the reaction chamber 2 not only can reduce the volume of the reaction chamber, but also can increase the length of uniform gas, improve the uniformity of gas flow, reduce the phenomenon of gas disorder, ensure that the precursor source can fully cover the whole substrate, ensure that the precursor source is uniformly contacted with the substrate, improve the uniformity of the deposited film, ensure the forming quality and the uniformity of the deposited film, and have high film forming efficiency, the period is short, the utilization rate of the precursor source is improved, and the method is suitable for batch production and has good practical value.

Referring to fig. 4, the gas inlet channel 8 in this embodiment is porous, the gas inlet channels 8 are provided in plural, the gas inlet channels 8 are provided on one side of the bottom of the reaction chamber 2, correspondingly, the gas outlet channels 9 are also porous, the gas outlet channels 9 are also provided in plural, and the gas outlet channels 9 are provided on the other side of the bottom of the reaction chamber 2.

Further, combine fig. 4, the inlet channel 8 of this embodiment is provided with the multiunit, multiunit inlet channel 8 sets gradually, every inlet channel 8 of group all is the arc, the aperture of each inlet channel 8 of every inlet channel 8 of group reduces to the direction of the central line of the bottom that is close to reaction chamber 2 in proper order, correspondingly, outlet channel 9 is provided with the multiunit, multiunit outlet channel 9 sets gradually, every outlet channel 9 of group all is the arc, the aperture of each inlet channel 4 of every outlet channel 9 of group reduces to the direction of the central line of the bottom that is close to reaction chamber 2 in proper order, can further improve the homogeneity that precursor source purged to the base member like this, improve the shaping quality of sedimentary membrane.

Of course, the inlet channels 8 and the outlet channels 9 in this embodiment may also have other shapes, such as a strip shape and a square shape, on the premise of the strip shape, the inlet channels 8 are provided in plural, the inlet channels 8 are provided at one side of the bottom of the reaction chamber 2, the outlet channels 9 are also provided in plural, the outlet channels 9 are provided at the other side of the bottom of the reaction chamber 2, and in order to ensure the purging uniformity, the sizes of the inlet channels 8 in this embodiment are sequentially reduced toward the direction close to the center line of the bottom of the reaction chamber 2, and the sizes of the outlet channels 9 are sequentially reduced toward the direction close to the center line of the bottom of the reaction chamber 2.

Referring to fig. 4, in the present embodiment, the first port 28 is opened between the inlet channel 8 and the outlet channel 9.

Example 3:

this example provides a reaction chamber suitable for use in the ALD processing apparatus of examples 1 or 2.

Fig. 5 is a schematic structural diagram of a reaction chamber in example 3, and the reaction chamber in this example is different from the reaction chamber in example 2 in that: two even gas plates 10 are arranged in the reaction chamber 2, the two even gas plates 10 are arranged oppositely by the central line of the bottom of the reaction chamber 2, the two even gas plates 10 are arranged between the gas inlet channel 8 and the gas outlet channel 9, the reaction chamber is divided into the gas inlet chamber, the reaction chamber and the gas outlet chamber by the two even gas plates 10, and a plurality of through holes are arranged on each even gas plate 10.

The precursor source can enter the air inlet cavity through the air inlet channel 8, then enter the reaction cavity through the gas homogenizing plate 10 on the same side of the air inlet cavity, purge the matrix, then be discharged into the air outlet cavity through the gas homogenizing plate 10 on the same side of the air outlet cavity, and be discharged through the air outlet channel 9, and the two gas homogenizing plates 10 can further improve the flowing uniformity of the precursor source.

In addition, in the embodiment, the central axes of the through holes on the two gas uniform plates 10 can be obliquely arranged, so that a symmetrical splayed shape can be formed, and the purging effect is better.

Example 4:

this example provides a reaction chamber suitable for use in the ALD process apparatus of examples 1-3.

Combine fig. 1, in this embodiment, the fixed transfer cavity 11 that is provided with in bottom of reaction chamber 2, the top of transfer cavity 11 is uncovered, reaction chamber 2's bottom covers on transfer cavity 11's top, so that transfer cavity 11 forms a seal chamber, be provided with two baffles 12 in the transfer cavity 11, two baffles 12 divide into first cavity with transfer cavity 11, second cavity and third cavity, inlet channel 8 and first cavity intercommunication, outlet channel 9 and third cavity intercommunication, the bottom of first cavity is provided with the main hole of admitting air 13, the bottom of third cavity is provided with main hole of giving vent to anger 14.

During specific implementation, the air inlet device can inject the precursor source into the first cavity through the air inlet main hole 13, then transfer the precursor source into the reaction cavity 2 through the first cavity, and the precursor source enters the third cavity after being purged in the reaction cavity 2, transfers the precursor source into the air outlet main hole 14, and is led out through the air exhaust device, so that the air homogenizing time of the precursor source can be increased, and the purging efficiency is improved.

In this embodiment, the cross-section of the first chamber and the third chamber may be fan-shaped, but it may also be other shapes, such as square, oval, etc., which is not limited in this embodiment, and the second opening may be opened in the second chamber.

Further, referring to fig. 1, in this embodiment, two partition plates 12 are disposed between the inlet channel 8 and the outlet channel 9, the inlet main hole 13 is disposed between the inlet channel 8 and the partition plate 12 on the same side, the outlet main hole 14 is disposed between the outlet channel 9 and the partition plate 12 on the same side, and the inlet main hole 13 and the outlet main hole 14 are disposed opposite to each other with respect to a center line of the top of the reaction chamber 2, that is, a distance between the inlet main hole 13 and the outlet main hole 14 in this embodiment is smaller than a distance between the inlet channel 8 and the outlet channel 9, so that the gas homogenizing time of the precursor source can be further increased, and the purging efficiency can be improved.

Referring to fig. 1, in this embodiment, a vacuum hole may be formed in the top of the reaction chamber 2, a true hole pipe 27 may be disposed between the top of the reaction chamber 2 and the top of the vacuum chamber 1, one end of the vacuum pipe 27 is communicated with the vacuum hole, the other end of the vacuum pipe 27 passes through the top of the vacuum chamber 1, a plurality of air holes are formed in the circumferential surface of the true hole pipe 27, and the other end of the vacuum pipe 27 is connected to a vacuum device for extracting air from the vacuum chamber 1 and the reaction chamber 2, so that the reactor a is in a vacuum environment. The arrangement mode can enable the vacuum extractor to be arranged at the top of the reactor a, reduce the height of processing equipment and optimize the spatial layout.

Of course, the vacuum tube 27 of this embodiment can also be disposed at the side of the reactor, which is not limited in this embodiment.

Example 5:

this embodiment is applicable to the ALD process apparatuses of embodiments 1-4.

Referring to fig. 1, the processing apparatus of the present embodiment further includes a first heater 15, a second heater 16, and a third heater 17, the first heater 15 is disposed on the bottom of the cover 5, an output end of the first heater 15 acts on the cover 5, the second heater 16 is disposed between the outer sidewall of the reaction chamber 2 and the inner sidewall of the vacuum chamber 1, an output end of the second heater 16 acts on the sidewall of the reaction chamber 2, the third heater 17 is disposed between the top of the reaction chamber 2 and the top of the vacuum chamber 1, and the third heater 17 acts on the top of the reaction chamber 2.

In this embodiment, since the output end of the first heater 15 acts on the cover 5, the output end of the second heater 16 acts on the sidewall of the reaction chamber 2, and the third heater 17 acts on the top of the reaction chamber 2, independent radiation heating and temperature control of the top, side, and bottom regions of the reaction chamber 2 can be achieved, and a uniform temperature field is formed in a large space, so that the heating temperature of the precursor source is rapidly raised to the required temperature, and the heating efficiency is high.

Referring to fig. 1, in this embodiment, a first mounting plate 18 is fixedly disposed at the bottom of the sealing cover 5, the first heater 15 includes a plurality of first heating wires, the plurality of first heating wires are concentrically arranged in a corrugated manner, and the plurality of first heating wires are all fixed on the top surface of the first mounting plate 18.

Further, referring to fig. 1, in this embodiment, the outer edge of the first mounting plate 18 is bent upward to form a first limiting rib, and the first limiting rib can limit the heating direction of the first heater 15 to a certain extent, so as to further improve the heating efficiency of the first heater 15.

Referring to fig. 1, the processing apparatus of the present embodiment further includes a first heat reflection assembly 19 disposed between the first heating assembly 15 and the bottom of the vacuum chamber 1, the first heat reflection assembly 19 may be fixedly disposed on the bottom surface of the first mounting plate 18, and the first heat reflection assembly 19 is used for reflecting heat generated by the first heater 15 during operation to the cover 5, so as to further increase the heating rate of the precursor source.

Combine fig. 1, in this embodiment, be provided with second mounting panel 20 between reaction chamber 2's the lateral wall and the inside wall of vacuum chamber 1, the global both ends of second mounting panel 20 are the closed loop, second mounting panel 20 is fixed to be set up on the top surface of the bottom of vacuum chamber 1, second heater 16 includes a plurality of second heater strips, every second heater strip all is coaxial cyclic annular setting, every second heater strip sets up on the inside wall of second mounting panel 20 along vertical fixed, every second heater strip all suits on reaction chamber 2's lateral wall, with the lateral wall to reaction chamber 2 heats.

Further, referring to fig. 1, in this embodiment, both ends of the second mounting plate 20 are flanged inward to form a second limiting rib, and the second limiting rib can limit the heating direction of the second heater 16 to a certain extent, so as to further improve the heating efficiency of the second heater 16.

With reference to fig. 1, the processing apparatus of the present embodiment further includes a second heat reflection assembly 21, the second heat reflection assembly 21 is disposed between the second heater 16 and the inner wall of the vacuum chamber 1, the second heat reflection assembly 21 may be fixedly disposed on an outer side surface of the second mounting plate 20, and the second heat reflection assembly 21 is configured to reflect heat generated by the second heater 16 during operation to the side wall of the reaction chamber 2, so as to further increase the heating rate of the precursor source.

Referring to fig. 1, in the present embodiment, a third mounting plate 22 is disposed between the top of the reaction chamber 2 and the top of the vacuum chamber 1, the third heater 17 includes a plurality of third heater strips, the plurality of third heater strips are concentrically arranged in a corrugated manner, and the plurality of third heater strips are all fixed on the lower surface of the third mounting plate 22.

Further, referring to fig. 1, in the present embodiment, the outer edge of the third mounting plate 22 is bent downward to form a third limiting rib, and the third limiting rib can limit the heating direction of the third heater 17 to a certain extent, so as to further improve the heating efficiency of the third heater 17.

Further, referring to fig. 1, the processing apparatus in this embodiment further includes a third heat reflection assembly 23, the third heat reflection assembly 23 is disposed between the top of the reaction chamber 2 and the top of the vacuum chamber 1, further, the third heat reflection assembly 23 may be fixedly disposed on the top surface of the third mounting plate 22, and the third heat reflection assembly 23 is used for reflecting the heat generated by the third heater 17 during operation onto the bottom of the reaction chamber 2, so as to further increase the heating rate of the precursor source.

In this embodiment, the first heat reflection assembly 19 and the second heat reflection assembly 21 and the third heat reflection assembly 23 may each include a plurality of heat reflection plates sequentially arranged, and the contact form of two adjacent heat reflection plates is multi-point contact, which has the characteristics of high heat reflection efficiency, energy saving, and uniformity of temperature field improvement.

Further, the thickness of each heat reflection plate of the present embodiment may be 0.04-1mm, and the distance between every two adjacent heat reflection plates is 0.05-0.1mm, so as to reduce the size of the space.

This embodiment utilizes the heating direction that each heat reflection assembly can restrict the heater that corresponds, only heats reaction chamber 2 like this, and vacuum chamber 1's temperature can keep the normal atmospheric temperature, need not adopt cooling facilities such as water-cooling to cool down vacuum chamber 1 to retrench the structure, have fine practicality.

Example 6:

this embodiment is applicable to the ALD process apparatuses of embodiments 1-5.

Referring to fig. 1, in this embodiment, a stop may be disposed on an edge of the top of the cover 5, and a boss is disposed at the first material opening 28 of the reaction chamber 2, and when the cover 5 seals the first material opening 28 of the reaction chamber 2, the boss may be inserted into the stop to improve the sealing effect of the reaction chamber 2.

In this embodiment, elevating gear b can be telescopic cylinder, and telescopic cylinder's cylinder body can fix the setting on the bottom of vacuum chamber 1, and telescopic cylinder's flexible end and closing cap fixed connection, through operation telescopic cylinder, can drive the closing cap and go up and down, and then realize opening or sealing of reaction chamber 2.

In this embodiment, telescopic cylinder can set up only a plurality ofly, and a plurality of telescopic cylinder synchronous working make the removal atress of closing cap 5 more balanced, and the lift of closing cap 5 is more stable.

Example 7:

this example discloses a delivery apparatus suitable for use in the ALD apparatus of examples 1-6.

Referring to fig. 1, the telescopic device of this embodiment includes a bottom plate 7 and a telescopic mechanism 24, a fixed end of the telescopic mechanism 24 is fixedly disposed on the bottom plate 7, a telescopic end of the telescopic mechanism 24 is capable of extending and retracting along a horizontal direction, and an end of the telescopic mechanism 24 is provided with an electromagnet.

In practical implementation, the base member can arrange in advance on a frame, place the frame on bottom plate 7, when needing to shift the base member to reactor a from the pay-off cavity, can be with the electro-magnet circular telegram of telescopic end of telescopic mechanism 24, telescopic mechanism 24's telescopic end and frame magnetism are connected, operate telescopic mechanism 24, can drive the frame that is equipped with the base member and slide on bottom plate 7, and then make the base member shift to reactor a from the pay-off cavity, afterwards, the electro-magnet outage, telescopic mechanism 24's telescopic end and the magnetic connection of frame disappear, operate conveying mechanism 24, can be with telescopic mechanism 24's telescopic end return. After the processing of the substrate is finished, the telescopic end of the telescopic mechanism 24 is firstly operated to enter the reactor a, then the electromagnet at the telescopic end of the telescopic mechanism 24 is electrified, the telescopic end of the telescopic mechanism 24 is magnetically connected with the frame, the telescopic mechanism 24 is operated, the telescopic end of the telescopic mechanism 24 returns, and the processed substrate is driven to return to the feeding chamber.

The number of the telescopic mechanisms 24 in this embodiment may be plural, and the telescopic mechanisms may be linear motion mechanisms such as cylinders and motors, which is not limited in this embodiment.

The embodiment can finish the conveying work of a plurality of matrixes at one time, and is suitable for the batch production and processing of products.

Example 8:

Fig. 6 is a schematic diagram of the conveying device and the frame equipped with the base body in this embodiment, and referring to fig. 6, the telescopic device in this embodiment also includes a bottom plate 7 and a telescopic mechanism 24, a fixed end of the telescopic mechanism 24 is fixedly arranged on the bottom plate 7, and a telescopic end of the telescopic mechanism 24 can be extended and retracted along a horizontal direction. The present embodiment is different from embodiment 7 in that two telescoping mechanisms 24 are provided in the present embodiment, and the two telescoping mechanisms 24 operate in synchronization.

Referring to fig. 6, in the present embodiment, a frame 25 for carrying the substrate is movably disposed on the bottom plate 7, two sides of the frame 25 in the width direction are respectively provided with a supporting ear plate 26, and the bottom of each supporting ear plate 26 is correspondingly supported by a telescopic end of one telescopic mechanism 24.

In practical implementation, the frame 25 is firstly placed on the telescopic ends of the two telescopic mechanisms 24, when a substrate needs to be transferred into the reactor a from the feeding chamber, the telescopic mechanisms 24 are operated, the telescopic ends of the telescopic mechanisms 24 support the frame 25 and are transferred onto the sealing cover 5 of the reactor a from the feeding chamber, then, the lifting device b is operated to ascend, the sealing cover 5 supports the frame 25, the frame 25 is separated from the telescopic ends of the telescopic mechanisms 24, the telescopic mechanisms 24 are operated, and after the telescopic mechanisms 24 return, the frame 25 is completely supported by the sealing cover 5; after the processing of the matrix is finished, the lifting device b is operated firstly, the frame 25 is lowered to a proper height, the lifting device b is operated continuously after the telescopic ends of the telescopic mechanisms 24 are positioned below the two supporting lug plates 26, the frame 25 is completely supported by the telescopic ends of the two telescopic mechanisms 24, and then the lifting device b is operated to return, so that the matrix which is filled with the processed matrix can be driven to be transferred into the feeding cavity from the reactor a.

The telescopic mechanism 24 of the present embodiment may be a linear motion mechanism such as an air cylinder or a motor, but the present embodiment is not limited thereto.

Example 9:

this example discloses an ALD process carried out in an ALD apparatus based on examples 1-8.

Fig. 7 is a schematic flow chart of an ALD processing method of the present embodiment, which, in conjunction with fig. 7, includes:

s1: providing a substrate, and placing the provided substrate in the feeding cavity c;

s2: the sealing door 5 and the conveying device 6 are operated in sequence, so that the second material opening is opened, and the base body is transferred to the sealing cover 5 from the feeding cavity c;

s3: the conveying device 6 and the sealing door 5 are operated in sequence, so that the conveying device 6 returns, the sealing door 5 seals the second material opening, and the reactor a is in a sealed environment;

s4: operating the lifting device b to cover the sealing cover 5 at the first material port 28 of the reaction chamber 2, wherein the substrate is positioned in the sealed reaction chamber 2, and the processing equipment is in the state shown in fig. 8;

s5: vacuumizing the reactor a;

s6: injecting a precursor source from an air inlet channel 8 of the reaction chamber 2, and after the precursor source purges the substrate in the reaction chamber 2, discharging the substrate from an air outlet channel 9 of the reaction chamber 2 to perform ALD processing of the substrate;

s7: operating the lifting device b to move the sealing cover 5 downwards, and synchronously moving the processed base body and the sealing cover 5 downwards;

s8: the sealing door 5 and the conveying device 6 are operated in sequence, so that the second material opening 3 is opened, and the processed matrix is transferred into the feeding cavity c by the lifting device 6.

In this embodiment, S6 further includes heating the reaction chamber 2, and the heating temperature can be set according to the processing requirement, which is not limited in this embodiment.

S6 of this embodiment specifically includes:

and sequentially and alternately pulsing, namely injecting the precursor source into the reaction chamber 2 from the gas inlet channel of the reaction chamber 2, wherein the precursor source sequentially and alternately generates chemical adsorption reaction on the surface of the substrate in the reaction chamber 2, discharging redundant precursor sources and reaction byproducts from the gas outlet channel of the reaction chamber 2 after purging is finished, repeating the sequential pulsing, introducing the precursor sources to complete surface self-limiting chemical adsorption reaction, and controlling the repetition times to obtain a film layer with accurate thickness, namely completing the ALD processing of the substrate.

Finally, it should be noted that the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention has been described in detail with reference to examples, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, which should be covered by the claims of the present invention.

Claims

1. An ALD processing apparatus, characterized in that the processing apparatus comprises:

2. The ALD processing apparatus of claim 1, wherein the gas inlet passage is hole-shaped, the gas inlet passage is provided in plurality, and the plurality of gas inlet passages are provided at one side of a bottom of the reaction chamber;

3. The ALD processing apparatus of claim 2, wherein the gas inlet passages are provided in a plurality of sets, the plurality of sets of gas inlet passages being arranged in sequence, each set of gas inlet passages having an arc shape, the aperture of each gas inlet passage of each set of gas inlet passages decreasing in sequence toward a center line near the bottom of the reaction chamber;

4. The ALD processing apparatus of claim 1, wherein two gas distribution plates are disposed in the reaction chamber, the two gas distribution plates being disposed opposite to each other about a center line of a bottom of the reaction chamber, the two gas distribution plates being disposed between the gas inlet channel and the gas outlet channel, the two gas distribution plates dividing the reaction chamber into a gas inlet chamber, a reaction chamber, and a gas outlet chamber, each gas distribution plate having a plurality of through holes disposed thereon.

5. The ALD processing equipment of claim 1, wherein a transfer chamber is fixedly arranged at the bottom of the reaction chamber, the top of the transfer chamber is open, the bottom of the reaction chamber covers the bottom of the transfer chamber, two partition plates are arranged in the transfer chamber, the transfer chamber is divided into a first chamber, a second chamber and a third chamber by the two partition plates, the gas inlet channel is communicated with the first chamber, the gas outlet channel is communicated with the third chamber, a gas inlet main hole is arranged at the bottom of the first chamber, and a gas outlet main hole is arranged at the bottom of the third chamber;

6. The ALD processing apparatus of claim 1, the processing apparatus further comprising:

7. The ALD process apparatus of claim 6, further comprising a first heat reflection assembly, a second heat reflection assembly, a third heat reflection assembly, wherein:

8. The ALD processing apparatus of claim 1, wherein the conveying device includes a bottom plate and a telescopic mechanism, a fixed end of the telescopic mechanism is fixedly disposed on the bottom plate, a telescopic end of the telescopic mechanism is capable of extending and retracting in a horizontal direction, and an end of the telescopic mechanism is provided with an electromagnet.

9. The ALD processing equipment of claim 1, wherein the conveying device includes a bottom plate and two oppositely disposed telescopic mechanisms, a fixed end of each telescopic mechanism is fixedly disposed on the bottom plate, and a telescopic end of each telescopic mechanism is horizontally telescopic;

10. An ALD process, wherein the process is carried out in the ALD process equipment of any one of claims 1 to 9, the process comprising:

vacuumizing the reactor;