CN102453852A - 镀膜件及其制备方法 - Google Patents

镀膜件及其制备方法 Download PDF

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CN102453852A
CN102453852A CN2010105117348A CN201010511734A CN102453852A CN 102453852 A CN102453852 A CN 102453852A CN 2010105117348 A CN2010105117348 A CN 2010105117348A CN 201010511734 A CN201010511734 A CN 201010511734A CN 102453852 A CN102453852 A CN 102453852A
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plated film
layer
crn
alloy
film spare
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张新倍
陈文荣
蒋焕梧
陈正士
李聪
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Priority to US13/189,993 priority patent/US8415023B2/en
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Abstract

本发明提供一种具有持久抗菌效果的镀膜件，其包括基材、形成于基材表面的打底层，该打底层为Cr层，该镀膜件还包括形成于打底层表面的若干CrN层和若干Cu-Ti合金层，该若干CrN层和若干Cu-Ti合金层交替排布。本发明所述镀膜件利用CrN层疏松多孔的结构，使Cu-Ti合金层的部分嵌入到该CrN层中，对Cu-Ti合金层中Cu离子的快速溶出起到阻碍作用，从而可缓释Cu金属离子的溶出，使Cu-Ti合金层具有长效的抗菌效果；同时Cu-Ti合金层中的Ti与空气中的氧气接触可生成具有抗菌效果的TiO2，可强化Cu-Ti合金层的抗菌效果。此外，本发明还提供一种所述镀膜件的制备方法。

Description

镀膜件及其制备方法
技术领域
本发明涉及一种镀膜件及其制备方法。
背景技术
有害细菌的传播和感染严重威胁着人类的健康，尤其是近年来SARS病毒、禽流感等的传播和感染，使抗菌材料在日常生活中的应用迅速发展起来。将抗菌金属(Cu、Zn、Ag等)涂覆于基材上形成抗菌镀膜件在目前市场上有着广泛的应用。该抗菌镀膜件的杀菌机理是：镀膜件在使用过程中，抗菌金属涂层会缓慢释放出金属离子如Cu2+、Zn2+，当微量的具有杀菌性的金属离子与细菌等微生物接触时，该金属离子依靠库伦力与带有负电荷的微生物牢固吸附，金属离子穿透细胞壁与细菌体内蛋白质上的巯基、氨基发生反应，使蛋白质活性破坏，使细胞丧失分裂增殖能力而死亡，从而达到杀菌的目的。
但是该类金属抗菌涂层厚度通常比较薄，且表面硬度较低容易磨损，从而降低了金属抗菌涂层的抗菌持久性。
发明内容
有鉴于此，有必要提供一种抗菌效果较为持久的镀膜件。
另外，还有必要提供一种上述镀膜件的制备方法。
一种镀膜件，其包括基材、形成于基材表面的打底层，该打底层为Cr层，该镀膜件还包括形成于打底层表面的若干CrN层和若干Cu-Ti合金层，该若干CrN层和若干Cu-Ti合金层交替排布。
一种镀膜件的制备方法，其包括如下步骤：
提供一基材；
在该基材的表面形成打底层，该打底层为Cr层；
在该打底层的表面形成CrN层；
在该CrN层的表面形成Cu-Ti合金层；
重复交替形成CrN层和Cu-Ti合金层以形成最外层为CrN层的镀膜件。
本发明所述镀膜件在基材表面交替溅镀CrN层和Cu-Ti合金层，CrN层形成为疏松多孔的结构，而使Cu-Ti合金层的部分嵌入到该CrN层中，对Cu-Ti合金层中Cu离子的快速溶出起到阻碍作用，从而可缓释Cu金属离子的溶出，使Cu-Ti合金层具有长效的抗菌效果；同时Cu-Ti合金层中的Ti与空气中的氧气接触可生成具有抗菌效果的TiO2，可强化Cu-Ti合金层的抗菌效果。
附图说明
图1为本发明一较佳实施例的镀膜件的剖视图。
主要元件符号说明
镀膜件             100
基材               10
打底层             20
CrN层              30
Cu-Ti合金层        40
具体实施方式
请参阅图1，本发明一较佳实施方式的镀膜件100包括基材10、形成于基材10表面的打底层20，形成于打底层20表面的若干CrN层30和若干Cu-Ti合金层40，该若干CrN层30和若干Cu-Ti合金层40交替排布，其中与所述打底层20直接相结合的是的CrN层30，最外层为CrN层30。所述若干CrN层30和若干Cu-Ti合金层40的总厚度可为1～8μm。本实施例中，所述若干CrN层30和若干Cu-Ti合金层40的层数可分别为5～20层。
该基材10的材质可为不锈钢或含Cr的合金。
该打底层20可以磁控溅射的方式形成。该打底层为一Cr层。该打底层20的厚度可为100～200nm。
该若干CrN层30可以磁控溅射的方式形成。所述每一CrN层30的厚度可为50～100nm。溅镀该CrN层30时采用较低的沉积温度和沉积偏压，使CrN层30具有更好的疏松多孔的结构，可使所述Cu-Ti合金层40的部分嵌入到该CrN层30中。
该若干Cu-Ti合金层40可以磁控溅射的方式形成。所述每一Cu-Ti合金层40的厚度可为200～300nm。在每一Cu-Ti合金层40与相邻的每一CrN层30的界面处，有部分Cu-Ti合金层40嵌入到CrN层30中，从而对Cu-Ti合金层40起到固持的作用，并可缓释Cu金属离子的溶出，使Cu-Ti合金层40具有长效的抗菌效果。
本发明一较佳实施方式的镀膜件100的制备方法，其包括如下步骤：
提供一基材10，该基材10的材质可为不锈钢或含Cr的合金。
对该基材10进行表面预处理。该表面预处理可包括常规的对基材10进行抛光、无水乙醇超声波清洗及烘干等步骤。
对经上述处理后的基材10的表面进行氩气等离子体清洗，以进一步去除基材10表面残留的杂质，以及改善基材10表面与后续镀层的结合力。具体操作及工艺参数为：将基材10放入一磁控溅射镀膜机(图未示)的镀膜室内，将该镀膜室抽真空至3×10～5torr，然后向镀膜室内通入流量为100～300sccm(标准状态毫升/分钟)的氩气(纯度为99.999％)，并施加-200～-800V的偏压于基材10，对基材10表面进行氩气等离子体清洗，清洗时间为3～10min。
采用磁控溅射法在经氩气等离子体清洗后的基材10的表面溅镀一打底层20，该打底层20可为一铬层。溅镀该打底层20在所述磁控溅射镀膜机中进行。使用金属铬靶，所述铬靶采用直流磁控电源。溅镀时，开启铬靶，通入工作气体氩气，氩气流量可为100～300sccm，对基材10施加-50～-150V的偏压，镀膜室的温度可为80～150℃，镀膜时间可为5～10min。该打底层20的厚度可为100～200nm。
继续采用磁控溅射法在所述打底层20的表面溅镀一CrN层30。使用金属铬靶，所述铬靶采用直流磁控电源。溅镀时，开启铬靶，通入反应气体氮气，氮气流量可为10～20sccm，通入工作气体氩气，氩气流量可为20～50sccm，对基材10施加直流偏压，直流偏压大小可为50～-150V，基材10的温度可为70～130℃，镀膜时间可为2～3min。该CrN层30的厚度可为50～100nm。溅镀该CrN层30采用较低的沉积温度和较低的沉积偏压，可使CrN层30达到较好的疏松多孔的结构。
继续采用磁控溅射法在所述CrN层30的表面溅镀一Cu-Ti合金层40。使用铜钛合金靶，所述铜钛合金靶中铜的质量百分含量为80％～90％，所述铜钛合金靶采用射频磁控电源。溅镀时，开启铜钛合金靶，通入工作气体氩气，氩气流量可为20～50sccm，对基材施加耦合脉冲偏压，耦合脉冲偏压大小可为-180～-350V，脉冲频率为10KHz，脉冲宽度为20μs，基材10的温度可为70～130℃，镀膜时间可为2～3min。该Cu-Ti合金层40的厚度可为200～300nm。
参照上述步骤，重复交替溅镀CrN层30和Cu-Ti合金层40，且最外层为CrN层30。交替溅镀的次数总共可为5～20次。所述若干CrN层30和若干Cu-Ti合金层40的总厚度可为1～8μm。
所述镀膜件100在基材10表面交替溅镀有CrN层30和Cu-Ti合金层40，CrN层30形成为疏松多孔的结构，可使Cu-Ti合金层40的部分嵌入到该CrN层30中，对Cu-Ti合金层40中Cu离子的快速溶出起到阻碍作用，从而可缓释Cu金属离子的溶出，使Cu-Ti合金层40具有长效的抗菌效果；另外Cu-Ti合金层40中的Ti与空气中的氧气接触可生成具有抗菌效果的TiO2，可强化Cu-Ti合金层40的抗菌效果；同时CrN层30具有良好的耐磨性、耐腐蚀性能以及色泽美观等特点，因而在整个膜层的最外层镀上CrN层30有助于提升镀膜件100的耐磨性及美观性，可延长镀膜件100的使用寿命。

Claims (12)

1.一种镀膜件，其包括基材、形成于基材表面的打底层，该打底层为Cr层，其特征在于：该镀膜件还包括形成于打底层表面的若干CrN层和若干Cu-Ti合金层，该若干CrN层和若干Cu-Ti合金层交替排布。
2.如权利要求1所述的镀膜件，其特征在于：所述基材为不锈钢或含Cr的合金。
3.如权利要求1所述的镀膜件，其特征在于：所述打底层以磁控溅射的方式形成，该打底层的厚度为100～200nm。
4.如权利要求1所述的镀膜件，其特征在于：所述若干CrN层以磁控溅射的方式形成，所述每一CrN层的厚度为50～100nm。
5.如权利要求1所述的镀膜件，其特征在于：所述若干Cu-Ti合金层以磁控溅射的方式形成，所述每一Cu-Ti合金层的厚度为200～300nm。
6.如权利要求1所述的镀膜件，其特征在于：所述若干CrN层和若干Cu-Zn合金层的总厚度为1～8μm。
7.如权利要求1所述的镀膜件，其特征在于：该镀膜件中与所述打底层直接相结合的是CrN层，且该镀膜件的最外层为CrN层。
8.一种镀膜件的制备方法，其包括如下步骤：
提供一基材；
在该基材的表面形成打底层，该打底层为Cr层；
在该打底层的表面形成CrN层；
在该CrN层的表面形成Cu-Ti合金层；
重复交替形成CrN层和Cu-Ti合金层以形成最外层为CrN层的镀膜件。
9.如权利要求8所述镀膜件的制备方法，其特征在于：形成所述打底层的步骤采用如下方式实现：采用磁控溅射法，使用金属铬靶，以氩气为工作气体，氩气流量为100～300sccm，对基材施加偏压为-50～-150V，镀膜室的温度为80～150℃，镀膜时间为5～10min。
10.如权利要求8所述镀膜件的制备方法，其特征在于：形成所述CrN层的步骤采用如下方式实现：采用磁控溅射法，使用金属铬靶，以氮气为反应气体，氮气流量为10～20sc cm，以氩气为工作气体，氩气流量为20～50sccm，对基材施加直流偏压为-50～-150V，镀膜室的温度为70～130℃，镀膜时间为2～3min。
11.如权利要求8所述镀膜件的制备方法，其特征在于：形成所述Cu-Ti合金层的步骤采用如下方式实现：采用磁控溅射法，使用铜钛合金靶，所述铜钛合金靶中铜的质量百分含量为80％～90％，以氩气为工作气体，氩气流量为20～50sc cm，对基材施加耦合脉冲偏压为-180～-350V，脉冲频率为10KHz，脉冲宽度为20μs，镀膜室的温度为70～130℃，镀膜时间为2～3min。
12.如权利要求8所述镀膜件的制备方法，其特征在于：所述交替形成CrN层和Cu-Ti合金层的次数总共为5～20次。
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