CN102447059B - Double-layer phase change resistance and forming method thereof as well as phase change memory and forming method thereof - Google Patents
Double-layer phase change resistance and forming method thereof as well as phase change memory and forming method thereof Download PDFInfo
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- CN102447059B CN102447059B CN201010509349.XA CN201010509349A CN102447059B CN 102447059 B CN102447059 B CN 102447059B CN 201010509349 A CN201010509349 A CN 201010509349A CN 102447059 B CN102447059 B CN 102447059B
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Abstract
The invention relates to a double-layer phase change resistance and a forming method of the double-layer phase change resistance as well as a phase change memory and a forming method of the phase change memory; the forming method of the double-layer phase change resistance comprises the following steps of: providing a substrate, and forming a first layer of phase change resistance on the substrate; forming a first dielectric layer with a first opening on the first layer of phase change resistance, wherein the first opening exposes the first layer of phase change resistance; forming a second dielectric layer, and covering the side wall of the first opening, wherein a second opening is formed by the second dielectric layer in a surrounding manner; forming a third dielectric layer in the second opening, and forming an annular opening between the third dielectric layer and the second dielectric layer; and forming a second layer of phase change resistance which covers the first dielectric layer, the second dielectric layer and the third dielectric layer and fills the annular opening. According to the forming method of the double-layer phase change resistance, the key size of a connecting part between the second layer of phase change resistance and the first layer of phase change resistance is ensured to be small, the performance of a PCRAM (Phase Change Random Access Memory) is increased, the reset current can be reduced, and the setting speed is improved.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to a kind of method of double-deck phase change resistor in phase transition storage, double-deck phase change resistor of forming, form method, the phase transition storage of phase transition storage.
Background technology
Along with the needs of the development memory device of information technology are increasing, therefore promote memory device towards high-performance, low pressure, low-power consumption, high speed and high density future development.Phase transition storage (PCRAM, phase change Random Access Memory) be the nonvolatile memory of new generation growing up on CMOS integrated circuit basis, the alloy of one or more elements of its life cycle Biao Zhong V family or VI family is as phase change resistor, with phase change resistor as memory cell, phase change resistor is concentrated heating in the form with electric pulse, can be unordered amorphous state (resistance is much higher) from orderly crystalline state (resistance is low) fast transition.Typical phase transition storage uses chalcogenide alloy (such as GST, GeSbTe) as phase change resistor, memory cell is a kind of minimum chalcogenide alloy particle, amorphous (the a-GST of phase change resistor, and crystallization (c-GST a-GeSbTe), c-GeSbTe) state has different resistivity, crystalline state has and is approximately kilohm typical resistances of (kQ), and noncrystalline state has the typical resistances of the megohm of being approximately (M Ω), therefore conventionally utilize chalcogenide alloy materials (such as GST, GeSbTe) to make phase change resistor.Read PCRAM unit by the resistance value (being the resistance value of phase change resistor) of measuring PCRAM memory cell.The Chinese patent literature that can be CN101523505A with reference to publication number about the detailed description of phase transition storage disclosed " thering is the phase transition storage of double bottom electrode ".
In prior art, there is the phase transition storage of double-deck phase change resistor, between the zone of heating of PCRAM memory cell traditional structure and bottom electrode, insert one deck storage medium GST, design the PCRAM memory cell structure containing double-deck GST phase change resistor.Realize on the one hand the transistorized heat of memory cell and CMOS containing the new structure of double-deck GST phase change resistor compatible, strengthened the stability of device; On the other hand, (reset) electric current that will reset is reduced to 0.5mA, has reduced device power consumption.
The method that forms double-deck GST phase change resistor in prior art is: substrate is provided, is formed with ground floor phase change resistor in described substrate, on described ground floor phase change resistor, form dielectric layer.Graphical described dielectric layer, forms opening with being dry-etched in described dielectric layer, and this opening exposes described dielectric layer.Be deposited on described dielectric layer with GST phase-change material, and fill described opening.Utilize afterwards the phase-change material of etching technics etching deposition to form second layer phase change resistor.The critical size (CD) of the connecting portion (being filled in the phase-change material in opening) of second layer phase change resistor and ground floor phase change resistor affects the reseting performance of phase transition storage.The critical size of connecting portion depends on the critical size (CD) of opening, and obtains the difficulty in process of the opening that critical size is little, and this will hinder further developing of phase transition storage.
Summary of the invention
The problem that the present invention solves is, while forming double-deck phase change resistor, to obtain the little opening process difficulty of critical size.
For addressing the above problem, the invention provides a kind of formation method of double-deck phase change resistor, comprising:
Substrate is provided, in described substrate, is formed with ground floor phase change resistor;
On described ground floor phase change resistor, form the first medium layer with the first opening, described the first opening exposes described ground floor phase change resistor;
Form second medium layer, cover the sidewall of described the first opening, and described second medium layer surrounds the second opening;
In described the second opening, form the 3rd dielectric layer, and be formed with annular opening between described the 3rd dielectric layer and described second medium layer;
Form second layer phase change resistor, described second layer phase change resistor covers described first medium layer, second medium layer, the 3rd dielectric layer and fills described annular opening.
Optionally, the described first medium layer with the first opening that forms on described ground floor phase change resistor comprises:
On described ground floor phase change resistor, form first medium layer;
Described in photoetching, etching, first medium layer forms the first opening.
Optionally, the material of described second medium layer is silicon nitride.
Optionally, the method for described formation second medium layer is chemical vapour deposition (CVD).
Optionally, describedly in described the second opening, form the 3rd dielectric layer, and between described the 3rd dielectric layer and described second medium layer, be formed with annular opening and comprise:
Sidewall at described the second opening forms side wall;
Form the 3rd dielectric layer, cover described first medium layer, second medium layer, described side wall and fill up described the second opening;
Described in planarization, the 3rd dielectric layer is to exposing described second medium layer;
Remove described side wall, between described the 3rd dielectric layer and described second medium layer, form annular opening.
Optionally, the material of described side wall is amorphous carbon.
Optionally, the method for the described formation of the sidewall at described the second opening side wall is chemical gaseous phase depositing process.
Optionally, the material of described ground floor phase change resistor and second layer phase change resistor is germanium-antimony-tellurium.
The present invention also provides a kind of formation method of phase transition storage, comprises and forms double-deck phase change resistor, and the method for the double-deck phase change resistor of described formation is above-described method.
The present invention also provides a kind of double-deck phase change resistor, comprising: ground floor phase change resistor and second layer phase change resistor, and described second layer phase change resistor comprises connecting portion, is connected with described ground floor phase change resistor, described connecting portion is ring-type.
The present invention also provides a kind of phase transition storage, comprise double-deck phase change resistor, described double-deck phase change resistor comprises ground floor phase change resistor and second layer phase change resistor, and described second layer phase change resistor comprises connecting portion, be connected with described ground floor phase change resistor, described connecting portion is ring-type.
The present invention also provides a kind of phase transition storage, comprising: the double-deck phase change resistor forming by above-described method.
Compared with prior art, the present invention has the following advantages:
The present invention, by form the first medium layer with the first opening on ground floor phase change resistor, should form second medium layer at the first opening sidewalls, and second medium layer surrounds the second opening; In the second opening, form the 3rd dielectric layer, and be formed with annular opening between described the 3rd dielectric layer and described second medium layer; Form second layer phase change resistor, cover described first medium layer, second medium layer, the 3rd dielectric layer and fill described annular opening.Easily form critical size circlet shape opening by such method, thereby the critical size of connecting portion that can guarantee second layer phase change resistor and ground floor phase change resistor is little, improve the performance of PCRAM, can reduce reset (reset) electric current, improve the speed (set speed) that arranges.
In specific embodiments of the invention, in the second opening, form the 3rd dielectric layer, and between the 3rd dielectric layer and second medium layer, be formed with annular opening and comprise: the sidewall at described the second opening forms side wall; Deposition of dielectric materials forms the 3rd dielectric layer, covers described second medium layer, described side wall and fills up described the first opening; Described in planarization, the 3rd dielectric layer is to exposing described second medium layer; Remove described side wall, between described the 3rd dielectric layer and described second medium layer, form annular opening.Simple for process in this specific embodiment, and the critical size of annular opening is by the THICKNESS CONTROL of side wall, easily realizes.
Brief description of the drawings
Fig. 1 is the flow chart of the formation method of the double-deck phase change resistor of the specific embodiment of the invention;
The cross-sectional view of the formation method of the double-deck phase change resistor that Fig. 2 a～Fig. 2 h is the specific embodiment of the invention.
Embodiment
The formation method of the double-deck phase change resistor of the specific embodiment of the invention, by form the first medium layer with the first opening on ground floor phase change resistor, forms second medium layer at the sidewall of the first opening, and second medium layer surrounds the second opening; In the second opening, form the 3rd dielectric layer, and be formed with annular opening between described the 3rd dielectric layer and described second medium layer; Form second layer phase change resistor, cover described first medium layer, second medium layer the 3rd dielectric layer and fill described annular opening.The phase change resistor of filling in opening is the connecting portion of second layer phase change resistor and ground floor phase change resistor, easily form the little annular opening of critical size by such method, thereby the critical size of connecting portion that can guarantee second layer phase change resistor and ground floor phase change resistor is little, improve the performance of PCRAM.
Fig. 1 is the flow chart of the formation method of the double-deck phase change resistor of the specific embodiment of the invention, and with reference to figure 1, the formation method of the double-deck phase change resistor of the specific embodiment of the invention comprises:
Step S1, provides substrate, is formed with ground floor phase change resistor in described substrate;
Step S2 forms the first medium layer with the first opening on described ground floor phase change resistor, and described the first opening exposes described ground floor phase change resistor;
Step S3, forms second medium layer, cover the sidewall of described the first opening, and described second medium layer surrounds the second opening;
Step S4 forms the 3rd dielectric layer in described the second opening, and is formed with annular opening between described the 3rd dielectric layer and described second medium layer;
Step S5, forms second layer phase change resistor, and described second layer phase change resistor covers described first medium layer, second medium layer, the 3rd dielectric layer and fills described annular opening.
The cross-sectional view of the formation method of the double-deck phase change resistor that Fig. 2 a～Fig. 2 h is the specific embodiment of the invention, in conjunction with the formation method that describes the double-deck phase change resistor of the specific embodiment of the invention with reference to figure 1 and Fig. 2 a～Fig. 2 h in detail.
In conjunction with reference to figure 1 and Fig. 2 a, perform step S1, substrate 30 is provided, in described substrate 30, be formed with ground floor phase change resistor 31.Substrate 30 comprises substrate (not marking in figure), and the material of substrate can be monocrystalline silicon (Si), monocrystalline germanium (Ge) or SiGe (GeSi), carborundum (SiC); Also can be silicon-on-insulator (SOI), germanium on insulator (GOI); Or can also be the III-V compounds of group such as other material, such as GaAs.Between substrate and ground floor phase change resistor 31, be formed with transistor (not shown), this transistor is used for to ground floor phase change resistor and the second layer phase change resistor forming afterwards provides electric current.In the specific embodiment of the invention, the material of ground floor phase change resistor 31 is germanium-antimony-tellurium (GST), in other embodiments also can life cycle Biao Zhong V family or the alloy of one or more elements of VI family as ground floor phase change resistor 31.
In conjunction with reference to figure 1 and Fig. 2 b, perform step S2, on described ground floor phase change resistor 31, form the first medium layer 32 with the first opening 321, described the first opening 321 exposes described ground floor phase change resistor 31.In the specific embodiment of the invention, on described ground floor phase change resistor 31, form the first medium layer 32 with the first opening 321 and comprise: on described ground floor phase change resistor, form first medium layer; Described in photoetching, etching, first medium layer forms the first opening 321.In this specific embodiment of the present invention, the material of first medium layer is silica, in other embodiments, and other insulating layer materials that the material of first medium layer also can be known to the skilled person.The first opening 321 is circle hole shape opening in the specific embodiment of the invention, and its diameter range is 80nm～200nm.
In conjunction with reference to figure 1 and Fig. 2 c, perform step S3, form second medium layer 33, cover the sidewall of described the first opening 321, described second medium layer 33 surrounds the second opening 322.In this specific embodiment of the present invention, the material of described second medium layer 33 is silicon nitride, the method that forms the second medium layer of silicon nitride material at the sidewall of described the first opening 321 is chemical vapour deposition (CVD), concrete grammar is: utilize chemical gaseous phase depositing process to form silicon nitride layer at the sidewall of the first opening 321 and the surface of first medium layer 32, thickness range 20nm～the 150nm of silicon nitride layer, then utilize etching to remove the silicon nitride on first medium layer 32 surface, remain the silicon nitride of the first opening 321 sidewalls, thereby form annular second medium layer 33.In specific embodiment, the thickness of silicon nitride layer does corresponding adjustment according to the diameter of the first opening, and after the nitride process of accomplishing etching completes, the diameter of the second opening 322 is at 40nm～100nm.
In conjunction with reference to figure 1 and Fig. 2 d, Fig. 2 e, Fig. 2 f, Fig. 2 g, perform step S4, at the interior formation of described the second opening 322 the 3rd dielectric layer 35, and be formed with annular opening 36 between described the 3rd dielectric layer 35 and described second medium layer 33.
In the specific embodiment of the invention, at the interior formation of described the second opening 322 the 3rd dielectric layer 35, and between described the 3rd dielectric layer 35 and described second medium layer 33, being formed with annular opening 36 is specially: with reference to figure 2d, the sidewall of described second medium layer 33 in other words the sidewall of the second opening 322 (can with reference to figure 2c) form side wall 34; With reference to figure 2e, form the 3rd dielectric layer 35, cover described first medium layer, second medium layer, described side wall and fill up described the second opening 322 (can in conjunction with reference to figure 2c); With reference to figure 2f, the 3rd dielectric layer 35 is to exposing described second medium layer 33 described in planarization; With reference to figure 2g, remove described side wall 34, between described the 3rd dielectric layer 35 and described second medium layer 33, form annular opening 36.Elaborate to forming annular opening 36 below.
With reference to figure 2d, form side wall 34 at the sidewall of described second medium layer 33, in this specific embodiment, the material of side wall 34 is amorphous carbon (amorphous carbon agraphitic carbon).The method that forms amorphous carbon side wall is: use chemical gaseous phase depositing process to form amorphous carbon layer at the surface of described first medium layer 32, surface and the sidewall of second medium layer 33, thickness 5nm～30nm, dry etching is removed the surface of first medium layer 32 and the surperficial amorphous carbon of second medium layer 33, the amorphous carbon of residue second medium layer 33 sidewall, thus side wall 34 formed at the sidewall of second medium layer.
With reference to figure 2e, form the 3rd dielectric layer 35, cover described first medium layer 32, second medium layer 33, described side wall 34 and fill up described the second opening 322 (in conjunction with reference to figure 2c).In this specific embodiment, the material oxidation silicon layer of the 3rd dielectric layer, utilizes chemical vapour deposition (CVD) to form the 3rd dielectric layer, in other embodiments of the invention, and other insulating material that the material of the 3rd dielectric layer also can be known to the skilled person.
With reference to figure 2f, the 3rd dielectric layer 35 is to exposing described second medium layer 33 described in planarization.In this specific embodiment, first medium layer 32 and second medium layer 33 are contour, and the 3rd dielectric layer 35 when exposing described second medium layer 33, also exposes first medium layer 32 described in planarization.
With reference to figure 2g, remove described side wall 34, between described the 3rd dielectric layer 35 and described second medium layer 33, form annular opening 36.In this specific embodiment, the material of side wall 34 is amorphous carbon, utilizes oxygen to react with amorphous carbon and generates carbon dioxide, i.e. O+C → C0
2remove side wall 34, thereby form annular opening 36 between the 3rd dielectric layer 35 and described second medium layer 33, the external diameter of annular opening 36 and the difference of internal diameter are determined by the thickness of side wall 34, the thickness of the side wall 34 that therefore can form by control is controlled internal-and external diameter poor of annular opening 36, and the thickness of side wall 34 can be very thin, the difference of therefore controlling the internal-and external diameter of annular opening 36 can be very little, and the critical size of annular opening can be very little.In this specific embodiment, form the simple for process of annular opening, and the critical size of annular opening is by the THICKNESS CONTROL of side wall, easily realizes.
In conjunction with reference to figure 1 and Fig. 2 h, perform step S5, form second layer phase change resistor 37, described second layer phase change resistor 37 covers described first medium layer 32, second medium layer 33, the 3rd dielectric layer 35 and fills described annular opening 36.In this specific embodiment, the material of second layer phase change resistor is germanium-antimony-tellurium (GST, Ge
2sb
2te
5), the method that forms second layer phase change resistor is: utilize magnetically controlled sputter method sputter Ge-Sb-Te alloy, on described first medium layer 32, second medium layer 33, the 3rd dielectric layer 35 and the interior deposition Ge-Sb-Te alloy of described annular opening 36, as second layer phase change resistor 37.Second layer phase change resistor described in planarization afterwards, then it is carried out to etching, can be with ground floor phase change resistor as memory cell.
The second layer phase change resistor being filled in annular opening 36 is the connecting portion 371 of this second layer phase change resistor and ground floor phase change resistor, the critical size of this connecting portion 371 is determined by the difference of the internal-and external diameter of annular opening 36, because the internal-and external diameter of annular opening is determined by the thickness of side wall, it is very little that the thickness of side wall can do, what therefore the difference of the internal-and external diameter of annular opening can be done is very little, it is very little that the critical size of the connecting portion of corresponding second layer phase change resistor and ground floor phase change resistor can do, therefore can improve the performance of PCRAM, can reduce reset (reset) electric current, improve the speed (set speed) that arranges.
Forming after second layer phase change resistor, just form double-deck phase change resistor, can on second layer phase change resistor, form metal interconnecting layer afterwards, form interconnection structure.
Based on the method for the double-deck phase change resistor of formation of the present invention, the present invention also provides a kind of method that forms phase transition storage, comprises and forms double-deck phase change resistor, and the method for the double-deck phase change resistor of described formation is the method for the double-deck phase change resistor of above-described formation.
With reference to figure 2h, the present invention also provides a kind of double-deck phase change resistor and comprises the phase transition storage of this bilayer phase change resistor, described double-deck phase change resistor comprises ground floor phase change resistor 31 and second layer phase change resistor 37, described second layer phase change resistor 37 comprises connecting portion 371, be connected with described ground floor phase change resistor 31, described connecting portion is ring-type.In addition, the present invention also provides a kind of phase transition storage that comprises the double-deck phase change resistor forming by the above method.
The foregoing is only specific embodiments of the invention; in order to make those skilled in the art better understand spirit of the present invention; but protection scope of the present invention is not taking the specific descriptions of this specific embodiment as limited range; any those skilled in the art is not departing from the scope of spirit of the present invention; can make an amendment specific embodiments of the invention, and not depart from protection scope of the present invention.
Claims (8)
1. a formation method for double-deck phase change resistor, is characterized in that, comprising:
Substrate is provided, in described substrate, is formed with ground floor phase change resistor;
On described ground floor phase change resistor, form the first medium layer with the first opening, described the first opening exposes described ground floor phase change resistor;
Surface and the sidewall of the first opening at described first medium layer form second medium layer, etching is removed the second medium layer on first medium layer surface, remain the second medium layer of the sidewall of described the first opening, and remaining described second medium layer surrounds the second opening;
Sidewall at described the second opening forms side wall, and the material of described side wall is amorphous carbon;
Form the 3rd dielectric layer, cover described first medium layer, second medium layer, described side wall and fill up described the second opening;
Described in planarization, the 3rd dielectric layer is to exposing described second medium layer;
Remove described side wall, between described the 3rd dielectric layer and described second medium layer, form annular opening;
Form second layer phase change resistor, described second layer phase change resistor covers described first medium layer, second medium layer, the 3rd dielectric layer and fills described annular opening.
2. the formation method of double-deck phase change resistor as claimed in claim 1, is characterized in that, the described first medium layer with the first opening that forms on described ground floor phase change resistor comprises:
On described ground floor phase change resistor, form first medium layer;
Described in photoetching, etching, first medium layer forms the first opening.
3. the formation method of double-deck phase change resistor as claimed in claim 1, is characterized in that, the material of described second medium layer is silicon nitride.
4. the formation method of double-deck phase change resistor as claimed in claim 3, is characterized in that, the method for described formation second medium layer is chemical vapour deposition (CVD).
5. the formation method of double-deck phase change resistor as claimed in claim 1, is characterized in that, the method that the described sidewall at described the second opening forms side wall is chemical gaseous phase depositing process.
6. the formation method of double-deck phase change resistor as claimed in claim 1, is characterized in that, the material of described ground floor phase change resistor and second layer phase change resistor is germanium-antimony-tellurium.
7. a formation method for phase transition storage, comprises and forms double-deck phase change resistor, it is characterized in that, the formation method of described double-deck phase change resistor is the method described in claim 1～6 any one.
8. a phase transition storage, is characterized in that, comprising: the double-deck phase change resistor forming by the method described in claim 1～6 any one.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1892993A (en) * | 2005-06-27 | 2007-01-10 | 海力士半导体有限公司 | Method of forming a micro pattern in a semiconductor device |
| US20070052009A1 (en) * | 2005-09-07 | 2007-03-08 | The Regents Of The University Of California | Phase change memory device and method of making same |
| CN101461071A (en) * | 2005-12-20 | 2009-06-17 | Nxp股份有限公司 | A vertical phase change memory cell and methods for manufacturing thereof |
| WO2009122349A2 (en) * | 2008-04-01 | 2009-10-08 | Nxp B.V. | Vertical phase change memory cell |
-
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1892993A (en) * | 2005-06-27 | 2007-01-10 | 海力士半导体有限公司 | Method of forming a micro pattern in a semiconductor device |
| US20070052009A1 (en) * | 2005-09-07 | 2007-03-08 | The Regents Of The University Of California | Phase change memory device and method of making same |
| CN101461071A (en) * | 2005-12-20 | 2009-06-17 | Nxp股份有限公司 | A vertical phase change memory cell and methods for manufacturing thereof |
| WO2009122349A2 (en) * | 2008-04-01 | 2009-10-08 | Nxp B.V. | Vertical phase change memory cell |
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