CN102446979B - PIN (Positive Intrinsic Negative) diode and manufacturing method thereof - Google Patents
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Abstract
The invention discloses a PIN (Positive Intrinsic Negative) diode which is provided with a wafer-shaped N-type cathode. An intrinsic semiconductor is arranged above the middle part of the wafer-shaped N-type cathode; and a ring-shaped N-type outside base area cathode is formed above the peripheral part of the wafer-shaped N-type cathode; and a wafer-shaped P-type anode is formed above the middle area of the intrinsic semiconductor far away from the end of the N-type cathode. The invention also discloses another PIN diode which is provided with a ring-shaped N-type cathode; an intrinsic semiconductor is arranged above the middle part of the ring-shaped N-type cathode; a ring-shaped N-type outside base area cathode is formed above the peripheral part of the ring-shaped N-type cathode; and a wafer-shaped P-type anode is formed above the middle area of the intrinsic semiconductor far away from the end of the N-type cathode. The invention has the beneficial effects that each PIN diode has low on resistance, and a manufacturing process of the PIN diode can be compatible with a BICMOS (Bipolar Complementary Metallic - Oxide Semiconductor) process. The invention also discloses a manufacturing method of the PIN diodes.
Description
Technical field
The present invention relates to semiconductor technology, particularly PIN diode and manufacture method thereof.
Background technology
Typical case's application of radio frequency electric switch is wireless transceiver.Wireless transceiver as shown in Figure 1, is made up of following four parts conventionally: power amplifier (PA), low noise amplifier (LNA), radio frequency electric switch, logic control circuit.Power amplifier and low noise amplifier are connected to antenna by radio frequency electric switch, and radiofrequency signal is transmitted and received.Because the signal of passing to antenna from power amplifier must be enough strong, the forward conduction loss that connected radio frequency electric switch need to be tried one's best low.And to low noise amplifier, the signal coming from power amplifier can be from reverse-biased (closing) thus radio frequency electric switch come in to form signal cross-talk, the connected radio frequency electric switch high reverse isolation of need to trying one's best.Be applied to RF application, radio frequency electric switch must possess following characteristics:
1. the low transmission delay of trying one's best.
2. insert (forward conduction) loss as far as possible low.
3. reverse isolation degree will be tried one's best high.
PIN diode (positive-intrinsic-negative diode) is by highly doped p type anode, the wide intrinsic silicon area (Intrinsic) of no or low doping, and highly doped N-type negative electrode composition.Its operation principle is: in the time that PIN diode adds a voltage that exceedes conduction threshold, low-doped intrinsic silicon area is completely depleted, and junction capacitance increases rapidly, and conducting resistance (insertion loss) reduces; In the time that diode is reverse-biased, width of depletion region is approximately equal to intrinsic silicon sector width, and junction capacitance is very little, and conducting resistance is very large, and isolation is very high.PIN diode can be used as radio frequency electric switch, is widely used in carrying out in the circuit of opening and closing radiofrequency signal.Square being directly proportional of the approximate thickness to intrinsic silicon area of the insertion loss of PIN diode and isolation.So, to low insertion loss requirement, reduce intrinsic silicon area thickness as far as possible; To high-isolation requirement, need to increase intrinsic silicon area thickness as far as possible.
Conventional PIN diode device architecture as shown in Figure 4, comprises the wide intrinsic silicon area 12 of the p type anode 13 of doping, no or low doping, highly doped N-type negative electrode 11, and conventional PIN diode adopts the form of discrete device more, and its manufacturing technology steps is:
One. in the silicon base (N-type negative electrode) 11 of high arsenic doping, with epitaxy method growth non-impurity-doped or low-doped intrinsic silicon area 12, as shown in Figure 2;
Two. carry out boron Implantation on intrinsic silicon area 12 tops, thermal annealing, forms highly doped p type anode 13, as shown in Figure 3;
Three. carry out front wafer surface metallization, attenuate and the back side are gold-plated, and cutting encapsulation, obtains conventional PIN diode device, as shown in Figure 4.
The PIN diode of above-mentioned routine, to different insertion loss and insulated degree requirement, can adopt different epitaxial thickness (intrinsic silicon area thickness).This scheme mature and reliable, product existing packaged on market is sold.But owing to adopting different epitaxial thicknesses to be difficult to realize in conventional BiCOMS technique, cannot be integrated on same chip with CMOS the conventional PIN diode of different insertion loss and insulated degree requirement simultaneously, conventionally can only adopt the form of discrete device.Therefore conventional PIN diode need to be external on pcb board, and volume is large, to different insertion loss and the requirement of reverse isolation degree, needs to buy different product, and expense is high.
Summary of the invention
The technical problem to be solved in the present invention is to provide PIN diode, and low and its worker artistic skill of conducting resistance is compatible with BiCMOS technique.
For solving the problems of the technologies described above, a kind of PIN diode providing of the present invention, comprise substrate, N-type negative electrode, intrinsic semiconductor, p type anode, isolated area, N-type outer base area negative electrode, described substrate top is formed with disc-shaped N-type negative electrode, the mid portion top growth of disc-shaped N-type negative electrode has intrinsic semiconductor, the peripheral part top of disc-shaped N-type negative electrode is formed with the circular N-type outer base area negative electrode coaxial with disc-shaped N-type negative electrode, described intrinsic semiconductor is affixed with circular N-type outer base area negative electrode near the periphery of described N-type cathode terminal, described intrinsic semiconductor is formed with the disc-shaped p type anode coaxial with disc-shaped N-type negative electrode away from the middle section top of N-type cathode terminal, described intrinsic semiconductor away from the periphery of N-type cathode terminal and disc-shaped p type anode periphery with between the negative electrode of circular N-type outer base area by the circular isolated area isolation coaxial with disc-shaped N-type negative electrode.
Described in the negative electrode of described N-type outer base area, N-type negative electrode is octagon disc-shaped, and described N-type outer base area negative electrode is that octagon is circular, and described isolated area is that octagon is circular, and described p type anode is octagon disc-shaped.
For solving the problems of the technologies described above, the another kind of PIN diode providing of the present invention, comprise substrate, N-type negative electrode, intrinsic semiconductor, p type anode, isolated area, N-type outer base area negative electrode, described substrate top is formed with circular N-type negative electrode, in the annulus of circular N-type negative electrode, the substrate top growth of the annulus inner region of acies top and circular N-type negative electrode has intrinsic semiconductor, the annulus outer edge top of circular N-type negative electrode is formed with the circular N-type outer base area negative electrode coaxial with circular N-type negative electrode, described intrinsic semiconductor is affixed with circular N-type outer base area negative electrode near the periphery of described N-type cathode terminal, described intrinsic semiconductor is formed with the disc-shaped p type anode coaxial with circular N-type negative electrode away from the middle section top of N-type cathode terminal, described intrinsic semiconductor away from the periphery of N-type cathode terminal and disc-shaped p type anode periphery with between the negative electrode of circular N-type outer base area by the circular isolated area isolation coaxial with circular N-type negative electrode.
Described N-type negative electrode is that octagon is circular, and described N-type outer base area negative electrode is that octagon is circular, and described isolated area is that octagon is circular, and described p type anode is octagon disc-shaped.
In the substrate in the annulus bottom center region of circular N-type negative electrode, can be formed with N-type deep trap.
For solving the problems of the technologies described above, of the present inventionly also provide a kind of PIN diode manufacture method, comprise the following steps:
Step 1. on the substrate of P type, by the method for N Implantation, form a disc-shaped N-type negative electrode;
Step 2. comprising the whole upper surface of base plate grown epitaxial layer of disc-shaped N-type negative electrode;
Step 3. on the epitaxial loayer above disc-shaped N-type negative electrode, form the circular isolated area coaxial with disc-shaped N-type negative electrode;
Step 4. the epitaxial loayer outside circular isolated area outer rim, carry out the through disc-shaped N-type negative electrode of N Implantation along the outer rim of circular isolated area, form the circular N-type outer base area negative electrode coaxial with disc-shaped N-type negative electrode;
Step 5. above the epitaxial loayer in circular isolated area inner edge, the boron Implantation that carries out high dose forms the highly doped disc-shaped p type anode coaxial with disc-shaped N-type negative electrode.
For solving the problems of the technologies described above, the manufacture method that another kind of PIN diode is also provided of the present invention, comprises the following steps:
Step 1. on the substrate of P type, by the method for N Implantation, form a circular N-type negative electrode;
Step 2. comprising the whole upper surface of base plate grown epitaxial layer of circular N-type negative electrode;
Step 3. on the epitaxial loayer above circular N-type negative electrode, form the circular isolated area coaxial with circular N-type negative electrode;
Step 4. the epitaxial loayer outside circular isolated area outer rim, carry out the through circular N-type negative electrode of N Implantation along the outer rim of circular isolated area, form the circular N-type outer base area negative electrode coaxial with circular N-type negative electrode;
Step 5. above the epitaxial loayer in circular isolated area inner edge, the boron Implantation that carries out high dose forms the highly doped p type anode coaxial with circular N-type negative electrode.
Can be after step 1, the substrate below the annular center of circular N-type negative electrode carries out N Implantation, forms N-type deep trap, and then carries out step 2.
PIN diode of the present invention, p type anode adopts disc-shaped, and the N-type outer base area negative electrode of periphery adopts circular, and anode current can flow to negative electrode uniformly like this, thereby makes the conducting resistance minimum from p type anode to N-type negative electrode.But reticle make and the technological process of silicon chip worker in, just circle is more difficult realization, generally replaces by the shape that regular hexagon, octagon, positive ten hexagons etc. approach circle, wherein octagon is the compromise the most often adopting.In its manufacturing process, N-type negative electrode is connected to chip surface by the outer base area negative electrode that can utilize ion injection method to form.To different insertion loss and insulated degree requirement, can reach to edge, negative electrode active area, outer base area spacing by different p type anode active region areas and p type anode, without adopting different epitaxial thicknesses, can in same technological process, realize by the change of domain different insertion loss and the requirement of reverse isolation degree.The manufacture of PIN diode of the present invention just can will be integrated in routine (or germanium silicon) BiCMOS technique, thereby realize the complete function of wireless transceiver at single-chip, do not need to increase the cost of technology, for the complete function of realizing wireless transceiver at single-chip provides low cost solution
Brief description of the drawings
Below in conjunction with the drawings and the specific embodiments, the present invention is described in further detail.
Fig. 1 is wireless transceiver schematic diagram;
Fig. 2 is manufacturing technology steps one schematic diagram of conventional PIN diode;
Fig. 3 is manufacturing technology steps two schematic diagrames of conventional PIN diode;
Fig. 4 is the device architecture schematic diagram of conventional PIN diode;
Fig. 5 is manufacturing technology steps one schematic diagram of the PIN diode of the first execution mode of the present invention;
Fig. 6 is manufacturing technology steps two schematic diagrames of the PIN diode of the first execution mode of the present invention;
Fig. 7 is manufacturing technology steps three schematic diagrames of the PIN diode of the first execution mode of the present invention;
Fig. 8 is manufacturing technology steps four schematic diagrames of the PIN diode of the first execution mode of the present invention;
Fig. 9 is the device architecture schematic diagram of the PIN diode of the first execution mode of the present invention;
Figure 10 is the device architecture schematic top plan view of the PIN diode of the first execution mode of the present invention;
Figure 11 is manufacturing technology steps one schematic diagram of the PIN diode of the second execution mode of the present invention;
Figure 12 is manufacturing technology steps two schematic diagrames of the PIN diode of the second execution mode of the present invention;
Figure 13 is manufacturing technology steps three schematic diagrames of the PIN diode of the second execution mode of the present invention;
Figure 14 is manufacturing technology steps four schematic diagrames of the PIN diode of the second execution mode of the present invention;
Figure 15 is manufacturing technology steps five schematic diagrames of the PIN diode of the second execution mode of the present invention;
Figure 16 is the device architecture schematic diagram of the PIN diode of the second execution mode of the present invention;
Figure 17 is the device architecture schematic top plan view of the PIN diode of the second execution mode of the present invention.
Embodiment
PIN diode the first execution mode of the present invention as shown in Figure 9, comprise substrate 1, N-type negative electrode 11, intrinsic semiconductor 12, p type anode 13, isolated area 14, N-type outer base area negative electrode 111, described substrate 1 top is formed with disc-shaped N-type negative electrode 11, the mid portion top growth of disc-shaped N-type negative electrode 11 has intrinsic semiconductor 12, the peripheral part top of disc-shaped N-type negative electrode 11 is formed with the circular N-type outer base area negative electrode 111 coaxial with disc-shaped N-type negative electrode 11, described intrinsic semiconductor 12 is affixed with circular N-type outer base area negative electrode 111 near the periphery of described N-type negative electrode 11 ends, described intrinsic semiconductor 12 is formed with the disc-shaped p type anode 13 coaxial with disc-shaped N-type negative electrode 11 away from the middle section top of N-type negative electrode 11 ends, described intrinsic semiconductor 12 away from the periphery of N-type negative electrode 11 ends and disc-shaped p type anode 13 peripheries with between circular outer base area negative electrode 111 by isolating with the coaxial circular isolated area 14 of disc-shaped N-type negative electrode 11.
Described N-type negative electrode 11, described N-type outer base area negative electrode 111, described isolated area 14, described p type anode can be the shape that regular hexagon, octagon, positive ten hexagons etc. approach circle simultaneously, as a preferred embodiment, the vertical view of the PIN diode of the first execution mode as shown in figure 10, described N-type negative electrode 11 is octagon disc-shaped, described N-type outer base area negative electrode 111 is that octagon is circular, described isolated area 14 is that octagon is circular, and described p type anode 13 is octagon disc-shaped.
The manufacture method of the PIN diode of the first execution mode, as shown in Fig. 5～9, comprises the following steps:
Step 1. on the silicon substrate 1 of P type, by the method for N Implantation, after high temperature, annealing, form a disc-shaped N-type negative electrode 11, as shown in Figure 5.The implanted dopant of the Implantation of N-type negative electrode 11 is arsenic, and implantation dosage is 1e15cm
-2～1e16cm
-2, Implantation Energy is 20keV～100keV.
Step 2. comprising the whole silicon substrate upper surface grown epitaxial layer 12 of disc-shaped N-type negative electrode 11, as shown in Figure 6.Described epitaxial loayer 12 is non-impurity-doped or N-type light dope, and impurity is phosphorus, adulterates by the method for doping in place, and doping content is less than 5e15cm
-3.
Step 3. on the epitaxial loayer 12 above disc-shaped N-type negative electrode 11, form the circular isolated area 14 coaxial with disc-shaped N-type negative electrode 11, isolated area 14 can be an oxygen, can be also shallow slot, as shown in Figure 7.
Step 4. the epitaxial loayer 12 outside circular isolated area 14 outer rims, carry out the through disc-shaped N-type negative electrode 11 of N Implantation along the outer rim of circular isolated area 14, form the circular N-type outer base area negative electrode 111 coaxial with disc-shaped N-type negative electrode 11, as shown in Figure 8.The implanted dopant of the Implantation of N-type outer base area negative electrode 111 is phosphorus, and implantation dosage is 1e15cm
-2～1e16cm
-2, Implantation Energy is 50keV～200keV.
Step 5. above the epitaxial loayer 12 in circular isolated area 14 inner edges, carry out the boron Implantation of high dose, form the highly doped p type anode 13 coaxial with disc-shaped N-type negative electrode 11, as shown in Figure 9.The process conditions of the Implantation of p type anode 13 are: implanted dopant is boron, and implantation dosage is 1e15cm
-2～1e16cm
-2, Implantation Energy is 2keV～20keV.
PIN diode the second execution mode of the present invention as shown in figure 16, comprise substrate 1, N-type negative electrode 11, intrinsic semiconductor 12, p type anode 13, isolated area 14, N-type outer base area negative electrode 111, described substrate 1 top is formed with circular N-type negative electrode 11, in the annulus of circular N-type negative electrode 11, the substrate 1 top growth of the annulus inner region of acies top and circular N-type negative electrode 11 has intrinsic semiconductor 12, in the substrate in the annulus bottom center region of circular N-type negative electrode 11, be formed with N-type deep trap 15, the annulus outer edge top of circular N-type negative electrode 11 is formed with the circular N-type outer base area negative electrode 111 coaxial with circular N-type negative electrode 11, described intrinsic semiconductor 12 is affixed with circular N-type outer base area negative electrode 111 near the periphery of described N-type negative electrode 11 ends, described intrinsic semiconductor 12 is formed with the disc-shaped p type anode 13 coaxial with circular N-type negative electrode away from the middle section top of N-type negative electrode 11 ends, described intrinsic semiconductor 12 away from the periphery of N-type negative electrode 11 ends and disc-shaped p type anode 13 peripheries with circular N-type outer base area negative electrode 111 by isolating with the coaxial circular isolated area 14 of circular N-type negative electrode 11.
Described N-type negative electrode 11, described N-type outer base area negative electrode 111, described isolated area 14, described p type anode can be the shape that regular hexagon, octagon, positive ten hexagons etc. approach circle simultaneously, as a preferred embodiment, the vertical view of the PIN diode of the second execution mode as shown in figure 17, described N-type negative electrode 11 is that octagon is circular, described N-type outer base area negative electrode 111 is that octagon is circular, described isolated area 14 is that octagon is circular, and described p type anode 13 is octagon disc-shaped.
The manufacture method of the PIN diode of the second execution mode, as shown in Figure 11～16, comprises the following steps:
Step 1. on the silicon substrate 1 of P type, by the method for N Implantation, after high temperature, annealing, form a circular N-type negative electrode 11, as shown in figure 11.The implanted dopant of the Implantation of N-type negative electrode 11 is arsenic, and implantation dosage is 1e15cm
-2～1e16cm
-2, Implantation Energy is 20keV～100keV.
Step 2. the silicon substrate below the annular center of circular N-type negative electrode 11 carries out deep trap N Implantation, forms N-type deep trap 15, as shown in figure 12; The implanted dopant of the Implantation of N-type deep trap 15 is phosphorus, and implantation dosage is 1e13cm
-2～1e14cm
-2, Implantation Energy is 1000keV～2000keV.
Step 3. comprising the whole silicon substrate 1 upper surface grown epitaxial layer 12 of circular N-type negative electrode 11, as shown in figure 13.Described epitaxial loayer 12 is non-impurity-doped or N-type light dope, and impurity is phosphorus, adulterates by the method for doping in place, and doping content is less than 5e15cm
-3.
Step 4. on the epitaxial loayer 12 above circular N-type negative electrode 11, form the circular isolated area 14 coaxial with circular N-type negative electrode 11, as shown in figure 14, isolated area 14 can be an oxygen, can be also shallow slot.
Step 5. the epitaxial loayer outside circular isolated area 14 outer rims, carry out the through circular N-type negative electrode 11 of N Implantation along the outer rim of circular isolated area 14, form the circular N-type outer base area negative electrode 111 coaxial with circular N-type negative electrode 11, as shown in figure 15.The implanted dopant of the Implantation of N-type outer base area negative electrode 111 is phosphorus, and implantation dosage is 1e15cm
-2～1e16cm
-2, Implantation Energy is 50keV～200keV.
Step 6. above the epitaxial loayer 12 in circular isolated area 14 inner edges, the boron Implantation that carries out high dose forms the highly doped p type anode 13 coaxial with circular N-type negative electrode, as shown in figure 16.The process conditions of the Implantation of p type anode 13 are: implanted dopant is boron, and implantation dosage is 1e15cm
-2～1e16cm
-2, Implantation Energy is 2keV～20keV.
The series resistance of pin diode switch is made up of three parts, p type anode (emitter), intrinsic semiconductor (base), outer base area negative electrode, and wherein latter two play a major role.PIN diode of the present invention, has two kinds of fundamental types, and the first is the structure that N-type negative electrode monoblock is communicated with, and the second is the structure of N-type negative electrode hollow ring.PIN diode of the present invention, p type anode adopts disc-shaped, and the N-type outer base area negative electrode of periphery adopts circular, and anode current can flow to negative electrode uniformly like this, thereby makes the conducting resistance minimum from p type anode to N-type negative electrode.But reticle make and the technological process of silicon chip worker in, just circle is more difficult realization, generally replaces by the shape that regular hexagon, octagon, positive ten hexagons etc. approach circle, wherein octagon is the compromise the most often adopting.
After coordinating the octagon of sub-circular with regard to structure, the first PIN diode structure has minimum conducting resistance, has minimum insertion loss.This be because, the electric current coming from p type anode can vertical current to highly doped low-resistance N-type negative electrode, current delivery distance is the shortest, series resistance is mainly the forward conduction resistance of intrinsic semiconductor (base).The differential concatenation resistance of this structure is also minimum, and reverse isolation degree is also minimum.The intrinsic semiconductor thickness of the no or low doping of this structure is equal to epitaxy layer thickness, and epitaxy layer thickness is to be determined by the requirement on devices of topmost device-N-type double pole triode in BiCMOS technique.For current technology node, the pin diode switch insertion loss of this structure is less than 1dB, and reverse isolation degree is greater than 20dB, meets the requirement of power amplifier to insertion loss and reverse isolation degree.
The second PIN diode structure, the intrinsic semiconductor thickness of its no or low doping equals epitaxy layer thickness and adds that p type anode arrives the distance s on N-type cathode-side edge.With respect to the first device architecture, its conducting resistance increases, and insertion loss increases, but reverse isolation degree also increases.The conducting resistance of this structure can change to the distance s at buried regions edge by adjusting active area, thereby realizes insertion loss and the reverse isolation degree of circuit requirement.This structure is also used in conjunction with the octagon of closest circle to reduce outer base area cathode resistor and then to be total conducting resistance.
To the first PIN diode device architecture, there are best p type anode active region area and anode to edge, negative electrode active area, outer base area spacing, can reach maximum reverse and isolate insertion loss ratio.This area is relevant with technique with spacing, can in layout design, put into the device of different area and spacing.In circuit application, if insertion loss that need to be lower can obtain meeting the device that radio transceiver circuitry requires by the method for single tube device parallel connection.
To the second PIN diode device architecture, can optimize p type anode active region area and the p type anode active area distance s to N-type cathode-side edge simultaneously, increase p type anode active area and can increase reverse isolation degree to the distance s on N-type cathode-side edge, obtain minimum insertion loss meeting after the requirement of given reverse isolation degree.To circular N-type negative electrode, owing to there is no heavily doped N-type negative electrode under anode, thereby can directly injecting substrate, part electric current increases insertion loss.If there is deep trap isolation in BiCMOS technique, can carries out in the N-type cathode ring center without buried regions deep trap N Implantation and directly inject substrate to reduce insertion loss to reduce electric current.
PIN diode of the present invention, in its manufacturing process, N-type negative electrode is connected to chip surface by the outer base area negative electrode that can utilize ion injection method to form.To different insertion loss and insulated degree requirement, can reach to edge, negative electrode active area, outer base area spacing by different p type anode active region areas and p type anode, without adopting different epitaxial thicknesses, can in same technological process, realize by the change of domain different insertion loss and the requirement of reverse isolation degree.The manufacture of PIN diode of the present invention just can will be integrated in routine (or germanium silicon) BiCMOS technique, thereby realize the complete function of wireless transceiver at single-chip, do not need to increase the cost of technology, for the complete function of realizing wireless transceiver at single-chip provides low cost solution.
Claims (7)
1. a PIN diode, comprises substrate, N-type negative electrode, intrinsic semiconductor, p type anode, isolated area, N-type outer base area negative electrode, it is characterized in that,
Described substrate top is formed with circular N-type negative electrode, in the annulus of circular N-type negative electrode, the substrate top growth of the annulus inner region of acies top and circular N-type negative electrode has intrinsic semiconductor, the annulus outer edge top of circular N-type negative electrode is formed with the circular N-type outer base area negative electrode coaxial with circular N-type negative electrode, described intrinsic semiconductor is affixed with circular N-type outer base area negative electrode near the periphery of described N-type cathode terminal, described intrinsic semiconductor is formed with the disc-shaped p type anode coaxial with circular N-type negative electrode away from the middle section top of N-type cathode terminal, described intrinsic semiconductor away from the periphery of N-type cathode terminal and disc-shaped p type anode periphery with between the negative electrode of circular N-type outer base area by the circular isolated area isolation coaxial with circular N-type negative electrode,
In the substrate in the annulus bottom center region of circular N-type negative electrode, be formed with N-type deep trap.
2. PIN diode according to claim 1, it is characterized in that, described N-type negative electrode is that octagon is circular, and described N-type outer base area negative electrode is that octagon is circular, described isolated area is that octagon is circular, and described p type anode is octagon disc-shaped.
3. a PIN diode manufacture method, is characterized in that, comprises the following steps:
Step 1. on the substrate of P type, by the method for N Implantation, form a disc-shaped N-type negative electrode;
Step 2. comprising the whole upper surface of base plate grown epitaxial layer of disc-shaped N-type negative electrode;
Step 3. on the epitaxial loayer above disc-shaped N-type negative electrode, form the circular isolated area coaxial with disc-shaped N-type negative electrode;
Step 4. the epitaxial loayer outside circular isolated area outer rim, carry out the through disc-shaped N-type negative electrode of N Implantation along the outer rim of circular isolated area, form the circular N-type outer base area negative electrode coaxial with disc-shaped N-type negative electrode;
Step 5. above the epitaxial loayer in circular isolated area inner edge, the boron Implantation that carries out high dose forms the highly doped disc-shaped p type anode coaxial with disc-shaped N-type negative electrode.
4. PIN diode manufacture method according to claim 3, it is characterized in that, described N type negative electrode is octagon disc-shaped, and described N-type outer base area negative electrode is that octagon is circular, described isolated area is that octagon is circular, and described p type anode is octagon disc-shaped.
5. a manufacture method for PIN diode, is characterized in that, comprises the following steps:
Step 1. on the substrate of P type, by the method for N Implantation, form a circular N-type negative electrode;
Step 2. comprising the whole upper surface of base plate grown epitaxial layer of circular N-type negative electrode;
Step 3. on the epitaxial loayer above circular N-type negative electrode, form the circular isolated area coaxial with circular N-type negative electrode;
Step 4. the epitaxial loayer outside circular isolated area outer rim, carry out the through circular N-type negative electrode of N Implantation along the outer rim of circular isolated area, form the circular N-type outer base area negative electrode coaxial with circular N-type negative electrode;
Step 5. above the epitaxial loayer in circular isolated area inner edge, the boron Implantation that carries out high dose forms the highly doped p type anode coaxial with circular N-type negative electrode.
6. the manufacture method of PIN diode according to claim 5, is characterized in that,
After step 1, the substrate below the annular center of circular N-type negative electrode carries out N Implantation, forms N-type deep trap, and then carries out step 2.
7. according to the PIN diode manufacture method described in claim 5 or 6, it is characterized in that, described N-type negative electrode is that octagon is circular, and described N-type outer base area negative electrode is that octagon is circular, described isolated area is that octagon is circular, and described p type anode is octagon disc-shaped.
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