CN102446943B - 用于cmos图像传感器的无损杂质掺杂的方法 - Google Patents
用于cmos图像传感器的无损杂质掺杂的方法 Download PDFInfo
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- CN102446943B CN102446943B CN201110308295.5A CN201110308295A CN102446943B CN 102446943 B CN102446943 B CN 102446943B CN 201110308295 A CN201110308295 A CN 201110308295A CN 102446943 B CN102446943 B CN 102446943B
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- dopant region
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000012535 impurity Substances 0.000 title description 5
- 239000002019 doping agent Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 238000005468 ion implantation Methods 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 2
- 241001232787 Epiphragma Species 0.000 claims 1
- 239000010410 layer Substances 0.000 description 39
- 238000009792 diffusion process Methods 0.000 description 8
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 238000005286 illumination Methods 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000005224 laser annealing Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229940090044 injection Drugs 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 208000024754 bloodshot eye Diseases 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 201000005111 ocular hyperemia Diseases 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/896,518 | 2010-10-01 | ||
US12/896,518 US8614112B2 (en) | 2010-10-01 | 2010-10-01 | Method of damage-free impurity doping for CMOS image sensors |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102446943A CN102446943A (zh) | 2012-05-09 |
CN102446943B true CN102446943B (zh) | 2015-03-25 |
Family
ID=45889079
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110308295.5A Active CN102446943B (zh) | 2010-10-01 | 2011-09-29 | 用于cmos图像传感器的无损杂质掺杂的方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8614112B2 (zh) |
CN (1) | CN102446943B (zh) |
HK (1) | HK1170844A1 (zh) |
TW (1) | TWI435445B (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI534995B (zh) * | 2010-07-16 | 2016-05-21 | 欣興電子股份有限公司 | 電子裝置及其製法 |
US8956909B2 (en) | 2010-07-16 | 2015-02-17 | Unimicron Technology Corporation | Method of fabricating an electronic device comprising photodiode |
JP5726005B2 (ja) * | 2010-08-02 | 2015-05-27 | アイメックImec | Cmos撮像装置アレイの製造方法 |
KR101803719B1 (ko) | 2010-10-26 | 2017-12-04 | 삼성전자 주식회사 | 후면 조사형 액티브 픽셀 센서 어레이 및 그 제조 방법, 이를 구비하는 후면 조사형 이미지 센서 |
EP2549536B1 (de) * | 2011-07-22 | 2020-08-19 | Espros Photonics AG | Halbleiterstruktur zur Photonendetektion |
US8253178B1 (en) * | 2011-08-02 | 2012-08-28 | Omnivision Technologies, Inc. | CMOS image sensor with peripheral trench capacitor |
FR2984607A1 (fr) * | 2011-12-16 | 2013-06-21 | St Microelectronics Crolles 2 | Capteur d'image a photodiode durcie |
US8889461B2 (en) * | 2012-05-29 | 2014-11-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | CIS image sensors with epitaxy layers and methods for forming the same |
JPWO2014080625A1 (ja) * | 2012-11-22 | 2017-01-05 | 株式会社ニコン | 撮像素子および撮像ユニット |
US8921187B2 (en) | 2013-02-26 | 2014-12-30 | Omnivision Technologies, Inc. | Process to eliminate lag in pixels having a plasma-doped pinning layer |
CN103139498B (zh) * | 2013-03-21 | 2016-01-27 | 北京思比科微电子技术股份有限公司 | Cmos图像传感器的像素单元及cmos图像传感器 |
CN103139497B (zh) * | 2013-03-21 | 2017-06-06 | 北京思比科微电子技术股份有限公司 | Cmos图像传感器的有源像素及cmos图像传感器 |
US9070802B2 (en) * | 2013-08-16 | 2015-06-30 | Himax Imaging, Inc. | Image sensor and fabricating method of image sensor |
US9123604B2 (en) * | 2013-10-17 | 2015-09-01 | Omnivision Technologies, Inc. | Image sensor with doped semiconductor region for reducing image noise |
US9691810B1 (en) * | 2015-12-18 | 2017-06-27 | Omnivision Technologies, Inc. | Curved image sensor |
CN108630713B (zh) | 2017-03-17 | 2020-11-27 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
US10418408B1 (en) | 2018-06-22 | 2019-09-17 | Omnivision Technologies, Inc. | Curved image sensor using thermal plastic substrate material |
JP7086783B2 (ja) * | 2018-08-13 | 2022-06-20 | 株式会社東芝 | 固体撮像装置 |
FR3091000B1 (fr) * | 2018-12-24 | 2020-12-04 | Soitec Silicon On Insulator | Procede de fabrication d’un substrat pour un capteur d’image de type face avant |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56165473A (en) * | 1980-05-24 | 1981-12-19 | Semiconductor Res Found | Semiconductor pickup device |
US4545526A (en) * | 1983-06-03 | 1985-10-08 | Toyota Jidosha Kabushiki Kaisha | Air conditioner for vehicle |
US20090124038A1 (en) * | 2007-11-14 | 2009-05-14 | Mark Ewing Tuttle | Imager device, camera, and method of manufacturing a back side illuminated imager |
US7741666B2 (en) | 2008-02-08 | 2010-06-22 | Omnivision Technologies, Inc. | Backside illuminated imaging sensor with backside P+ doped layer |
US7901974B2 (en) * | 2008-02-08 | 2011-03-08 | Omnivision Technologies, Inc. | Masked laser anneal during fabrication of backside illuminated image sensors |
-
2010
- 2010-10-01 US US12/896,518 patent/US8614112B2/en active Active
-
2011
- 2011-09-08 TW TW100132474A patent/TWI435445B/zh active
- 2011-09-29 CN CN201110308295.5A patent/CN102446943B/zh active Active
-
2012
- 2012-11-09 HK HK12111383.8A patent/HK1170844A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
TW201218365A (en) | 2012-05-01 |
TWI435445B (zh) | 2014-04-21 |
US20120080765A1 (en) | 2012-04-05 |
US8614112B2 (en) | 2013-12-24 |
CN102446943A (zh) | 2012-05-09 |
HK1170844A1 (zh) | 2013-03-08 |
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