CN102437187B - 带有mosfet和低正向电压的等效二极管增强型jfet的半导体器件及其制备方法 - Google Patents
带有mosfet和低正向电压的等效二极管增强型jfet的半导体器件及其制备方法 Download PDFInfo
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- CN102437187B CN102437187B CN201110306022.7A CN201110306022A CN102437187B CN 102437187 B CN102437187 B CN 102437187B CN 201110306022 A CN201110306022 A CN 201110306022A CN 102437187 B CN102437187 B CN 102437187B
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- Prior art keywords
- enhancement mode
- mosfet
- equivalent diode
- jfet
- mode jfet
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 133
- 238000000034 method Methods 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims abstract description 88
- 238000002360 preparation method Methods 0.000 claims description 35
- 238000002513 implantation Methods 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 12
- 230000005669 field effect Effects 0.000 claims description 9
- 239000002019 doping agent Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000007943 implant Substances 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 description 20
- 238000010586 diagram Methods 0.000 description 19
- 238000002161 passivation Methods 0.000 description 9
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- 239000004327 boric acid Substances 0.000 description 1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/098—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (16)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410084356.8A CN104009518B (zh) | 2011-09-26 | 2011-09-26 | 电池充电电路 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/893,978 US8669613B2 (en) | 2010-09-29 | 2010-09-29 | Semiconductor device die with integrated MOSFET and low forward voltage diode-connected enhancement mode JFET and method |
US12/893,978 | 2010-09-29 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410084356.8A Division CN104009518B (zh) | 2011-09-26 | 2011-09-26 | 电池充电电路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102437187A CN102437187A (zh) | 2012-05-02 |
CN102437187B true CN102437187B (zh) | 2015-07-01 |
Family
ID=45869978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110306022.7A Active CN102437187B (zh) | 2010-09-29 | 2011-09-26 | 带有mosfet和低正向电压的等效二极管增强型jfet的半导体器件及其制备方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8669613B2 (zh) |
CN (1) | CN102437187B (zh) |
TW (1) | TWI448038B (zh) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2982998B1 (fr) * | 2011-11-17 | 2013-12-20 | Commissariat Energie Atomique | Batterie d'accumulateurs protegee contre les courts-circuits internes |
JP2014027253A (ja) * | 2012-06-22 | 2014-02-06 | Toshiba Corp | 整流回路 |
US10290702B2 (en) | 2012-07-31 | 2019-05-14 | Silanna Asia Pte Ltd | Power device on bulk substrate |
US9412881B2 (en) | 2012-07-31 | 2016-08-09 | Silanna Asia Pte Ltd | Power device integration on a common substrate |
US8928116B2 (en) * | 2012-07-31 | 2015-01-06 | Silanna Semiconductor U.S.A., Inc. | Power device integration on a common substrate |
US9143078B2 (en) * | 2012-11-29 | 2015-09-22 | Infineon Technologies Ag | Power inverter including SiC JFETs |
US9455621B2 (en) * | 2013-08-28 | 2016-09-27 | Power Integrations, Inc. | Controller IC with zero-crossing detector and capacitor discharge switching element |
CN104701367A (zh) * | 2013-12-06 | 2015-06-10 | 上海华虹宏力半导体制造有限公司 | 稳流管及制造方法 |
CN106158804B (zh) | 2015-04-02 | 2018-11-16 | 台达电子工业股份有限公司 | 一种半导体封装结构及其半导体功率器件 |
US9667154B2 (en) | 2015-09-18 | 2017-05-30 | Power Integrations, Inc. | Demand-controlled, low standby power linear shunt regulator |
US9602009B1 (en) | 2015-12-08 | 2017-03-21 | Power Integrations, Inc. | Low voltage, closed loop controlled energy storage circuit |
US9629218B1 (en) | 2015-12-28 | 2017-04-18 | Power Integrations, Inc. | Thermal protection for LED bleeder in fault condition |
US9780088B1 (en) | 2016-03-31 | 2017-10-03 | International Business Machines Corporation | Co-fabrication of vertical diodes and fin field effect transistors on the same substrate |
US10388781B2 (en) | 2016-05-20 | 2019-08-20 | Alpha And Omega Semiconductor Incorporated | Device structure having inter-digitated back to back MOSFETs |
US10446545B2 (en) | 2016-06-30 | 2019-10-15 | Alpha And Omega Semiconductor Incorporated | Bidirectional switch having back to back field effect transistors |
US10978869B2 (en) * | 2016-08-23 | 2021-04-13 | Alpha And Omega Semiconductor Incorporated | USB type-C load switch ESD protection |
US10056461B2 (en) | 2016-09-30 | 2018-08-21 | Alpha And Omega Semiconductor Incorporated | Composite masking self-aligned trench MOSFET |
US10103140B2 (en) | 2016-10-14 | 2018-10-16 | Alpha And Omega Semiconductor Incorporated | Switch circuit with controllable phase node ringing |
US10199492B2 (en) | 2016-11-30 | 2019-02-05 | Alpha And Omega Semiconductor Incorporated | Folded channel trench MOSFET |
US10498300B2 (en) | 2017-07-17 | 2019-12-03 | Power Integrations, Inc. | Voltage-to-current transconductance operational amplifier with adaptive biasing |
US10504995B1 (en) * | 2018-08-09 | 2019-12-10 | Semiconductor Components Industries, Llc | Short-circuit performance for silicon carbide semiconductor device |
CN111478378B (zh) * | 2019-01-23 | 2022-03-15 | Oppo广东移动通信有限公司 | 保护电路、充电控制装置和方法、电子设备 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101542697A (zh) * | 2006-05-31 | 2009-09-23 | 先进模拟科技公司 | 高压双极-cmos-dmos集成电路器件及其模块形成方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5818084A (en) * | 1996-05-15 | 1998-10-06 | Siliconix Incorporated | Pseudo-Schottky diode |
US6734715B1 (en) * | 1999-11-29 | 2004-05-11 | Lovoltech, Inc. | Two terminal rectifier using normally off JFET |
US6822292B2 (en) * | 2001-11-21 | 2004-11-23 | Intersil Americas Inc. | Lateral MOSFET structure of an integrated circuit having separated device regions |
JP2005108980A (ja) * | 2003-09-29 | 2005-04-21 | Rohm Co Ltd | 半導体装置 |
TW200541189A (en) * | 2004-06-14 | 2005-12-16 | Richtek Techohnology Corp | Charger using depletion transistor as current source |
US7348826B1 (en) * | 2005-03-18 | 2008-03-25 | Qspeed Semiconductor Inc. | Composite field effect transistor |
US8269263B2 (en) * | 2008-05-12 | 2012-09-18 | Vishay-Siliconix | High current density power field effect transistor |
-
2010
- 2010-09-29 US US12/893,978 patent/US8669613B2/en active Active
-
2011
- 2011-09-26 CN CN201110306022.7A patent/CN102437187B/zh active Active
- 2011-09-26 TW TW100134555A patent/TWI448038B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101542697A (zh) * | 2006-05-31 | 2009-09-23 | 先进模拟科技公司 | 高压双极-cmos-dmos集成电路器件及其模块形成方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201230596A (en) | 2012-07-16 |
US8669613B2 (en) | 2014-03-11 |
CN102437187A (zh) | 2012-05-02 |
US20120074896A1 (en) | 2012-03-29 |
TWI448038B (zh) | 2014-08-01 |
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Address after: Bermuda Hamilton Church 2 Cola Lunden House Street Patentee after: ALPHA & OMEGA SEMICONDUCTOR, Ltd. Address before: No. 475 California Sunnyvale, oak Mead Avenue Patentee before: ALPHA & OMEGA SEMICONDUCTOR, Ltd. |
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Effective date of registration: 20160919 Address after: 400700 Chongqing city Beibei district and high tech Industrial Park the road No. 5 of 407 Patentee after: Chongqing Wanguo Semiconductor Technology Co.,Ltd. Address before: Bermuda Hamilton Church 2 Cola Lunden House Street Patentee before: ALPHA & OMEGA SEMICONDUCTOR, Ltd. |
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Effective date of registration: 20180305 Address after: The British West Indies Dakaiman Cayman Island KY1-1107 No. 122 Marie street, and the wind floor 709 mailbox Patentee after: Alpha and Omega Semiconductor (Cayman) Ltd. Address before: 400700 Chongqing city Beibei district and high tech Industrial Park the road No. 5 of 407 Patentee before: Chongqing Wanguo Semiconductor Technology Co.,Ltd. |
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