CN102437058A - Manufacturing method of PMOS (P-channel Metal Oxide Semiconductor) device - Google Patents
Manufacturing method of PMOS (P-channel Metal Oxide Semiconductor) device Download PDFInfo
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- CN102437058A CN102437058A CN2011103662664A CN201110366266A CN102437058A CN 102437058 A CN102437058 A CN 102437058A CN 2011103662664 A CN2011103662664 A CN 2011103662664A CN 201110366266 A CN201110366266 A CN 201110366266A CN 102437058 A CN102437058 A CN 102437058A
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Abstract
The invention discloses a manufacturing method of a PMOS (P-channel Metal Oxide Semiconductor) device. In an ion implantation process of a source-drain expansion region, an ion implantation step of the source-drain expansion region of a PMOSIO (PMOS Input/Output) device is arranged before formation of a core device, implanted energy is implanted into boron or boron fluoride ions as high-energy as possible according to the thickness of a polysilicon gate, and ion implantation energy is limited to not penetrate the polysilicon gate. After the ion implantation of the source-drain expansion region of the IO device, a heat effect process of a furnace tube is added, and the heat effect process of the furnace tube can ensure that the implanted ions are diffused and the depth of the source-drain expansion region of the IO device is increased, so that a source-drain expansion region joint is changed into a relatively slow varying joint, therefore current leakage is not easy to happen. Meanwhile, because the PMOS core device is not formed jet when the heat effect process of the furnace tube is carried out, a short channel effect of the PMOS core device is not easy to appear.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of manufacturing approach of PMOS device.
Background technology
Along with the develop rapidly of semiconductor fabrication, in order to realize high integration, size of semiconductor device is constantly being dwindled.In the manufacturing process of P-channel metal-oxide-semiconductor (PMOS) device; Because constantly dwindling of PMOS device size; Polysilicon gate thickness also requires more and more thinner, and the ion implantation energy that the expansion area is leaked in this source that makes is little, punches polysilicon gate in order to avoid inject ion.But because the ion implantation energy of leakage expansion area, source is little, make that the degree of depth of leakage expansion area, source is more shallow, can cause PMOS input and output device (IO device) serious grid to occur and induce leakage current (GIDL, Gate Induced Drain Leakage) effect.
Figure 1A～1D is the method sketch map that forms the PMOS device in the prior art.In the prior art, the method for formation PMOS comprises the following steps:
Step S11 shown in Figure 1A, forms gate oxide 102 and polysilicon layer 103 successively on substrate 101.
Step S12 shown in Figure 1B, carries out etching to said gate oxide 102 with said polysilicon layer 103, forms core devices grid 11 and IO device grids 12.
Step S13 is shown in Fig. 1 C, at said structure surface coverage one deck photoresist 104; And remove the photoresist 104 in core devices zone, form the core devices ion and inject window.
Step S14 shown in Fig. 1 C, carries out lightly-doped source drain region (LDD, Lightly Doped Drain) ion injection and bag-like region (pocket) ion and injects in said core devices grid 11 both sides, expansion area 105 is leaked in the source that forms core devices.Remove photoresist 104 then.
Step S15 is shown in Fig. 1 D, at said structure surface coverage one deck photoresist 106; And the photoresist 106 of removal IO device area, form IO device ion and inject window.
Step S16 shown in Fig. 1 D, carries out ion injection of lightly-doped source drain region and bag-like region ion and injects in said IO device grids 12 both sides, expansion area 107 is leaked in the source that forms the IO device.Remove photoresist 106 then.
The PMOS device that utilizes said method to make because the ion implantation energy of leakage expansion area, source is little, makes that the degree of depth of leakage expansion area, source is more shallow, causes the GIDL effect of PMOS IO device easily.
Prior art is to improve the GIDL effect of PMOS IO device, adopt usually and optimize the method that lightly-doped source drain region ion injects and the bag-like region ion injects, but this method effect behind 90 nanometer processing procedures is not obvious.It is after the IO device source is leaked expansion area formation that another kind is improved one's methods, and increases the thermal effect technology of one boiler tube, can make the ions diffusion of injection and increase the degree of depth that said IO device source is leaked the expansion area, thereby improve the GIDL effect.But the thermal effect technology of said boiler tube can make the PMOS core devices that has formed produce short-channel effect.Therefore, how to improve the GIDL effect of PMOS IO device and to avoid the PMOS core devices to produce short-channel effect be problem demanding prompt solution in the semiconductor fabrication process.
Summary of the invention
The object of the present invention is to provide a kind of manufacturing approach of PMOS device,, reduce the leakage current of device, and can avoid the PMOS core devices to produce short-channel effect to improve the GIDL effect of PMOS IO device.
For solving the problems of the technologies described above, the present invention provides a kind of manufacturing approach of PMOS device, comprises the following steps:
On substrate, form gate oxide and polysilicon layer successively;
Said gate oxide and said polysilicon layer are carried out etching, form IO device grids and core devices grid;
Cover photoresist in the core devices zone, expose the IO device area;
Carry out ion injection of lightly-doped source drain region and bag-like region ion in said IO device grids both sides and inject, the expansion area is leaked in the source that forms the IO device, removes photoresist;
Carry out the thermal effect technology of boiler tube;
Cover photoresist at the IO device area, expose the core devices zone;
Carry out ion injection of lightly-doped source drain region and bag-like region ion in said core devices grid both sides and inject, the expansion area is leaked in the source that forms core devices, removes photoresist.
In the manufacturing approach of described PMOS device, the injection ion that forms the lightly-doped source drain region ion injection of said IO device source leakage expansion area is boron or boron fluoride.
In the manufacturing approach of described PMOS device, the injection ion that forms the bag-like region ion injection of said IO device source leakage expansion area is boron or boron fluoride.
In the manufacturing approach of described PMOS device, the thermal effect process conditions of said boiler tube are: temperature is 500 ℃～1000 ℃, and the time minimum is 10 minutes.
In the manufacturing approach of described PMOS device, the injection ion that forms the lightly-doped source drain region ion injection of leakage expansion area, said core devices source is boron or boron fluoride.
In the manufacturing approach of described PMOS device, the injection ion that forms the bag-like region ion injection of leakage expansion area, said core devices source is boron or boron fluoride.
The manufacturing approach of PMOS device provided by the invention; Leak in the ion implantation technology of expansion area in the source; The ion that leaks the source of PMOS IO device the expansion area injects the front that is placed on core devices; The energy that injects is according to polysilicon gate thickness, high-octane as far as possible injection boron or boron fluoride ion, and the energy that ion injects is restriction not punch polysilicon gate.After finishing the ion injection of IO device source leakage expansion area; The thermal effect technology that adds one boiler tube; The thermal effect technology of said boiler tube can make the ions diffusion of injection and increase the degree of depth that said IO device source is leaked the expansion area; The source that makes is leaked the expansion area joint and is become more gradual joint, thereby is not easy to take place leakage current.Simultaneously, owing to when carrying out the thermal effect technology of said boiler tube, do not form the PMOS core devices as yet, thereby be not easy to produce the short-channel effect of PMOS core devices.Therefore, the manufacturing approach of PMOS device provided by the invention can be improved the GIDL effect of PMOS IO device, reduces the leakage current of device, and can avoid the PMOS core devices to produce short-channel effect.
Description of drawings
Figure 1A～1D is the method sketch map that forms the PMOS device in the prior art;
Fig. 2 is the method flow diagram of the formation PMOS device of one embodiment of the invention;
Fig. 3 A～3D is the method sketch map of the formation PMOS device of one embodiment of the invention.
Embodiment
Do detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
Core concept of the present invention is, a kind of manufacturing approach of PMOS device is provided: leak in the ion implantation technology of expansion area in the source, the ion that leaks the source of PMOS IO device the expansion area injects the front that is placed on core devices; And after finishing the ion injection of IO device source leakage expansion area, add the thermal effect technology of one boiler tube.The thermal effect technology of said boiler tube can make the ions diffusion of injection and increase the degree of depth that said IO device source is leaked the expansion area, and the source that makes is leaked the expansion area joint and become more gradual joint, thereby is not easy to take place leakage current, can improve the GIDL effect of PMOS IO device.Simultaneously, owing to when carrying out the thermal effect technology of said boiler tube, do not form the PMOS core devices as yet, thereby be not easy to produce the short-channel effect of PMOS core devices.
Fig. 2 is the method flow diagram of the formation PMOS device of one embodiment of the invention.Fig. 3 A～3D is the method sketch map of the formation PMOS device of one embodiment of the invention.As shown in Figure 2, the manufacturing approach of PMOS device provided by the invention may further comprise the steps:
Step S21 shown in Fig. 3 A, forms gate oxide 202 and polysilicon layer 203 successively on substrate 201.
Step S22 shown in Fig. 3 B, carries out etching to said gate oxide 202 with said polysilicon layer 203, forms IO device grids 21 and core devices grid 22.
Step S23 is shown in Fig. 3 C, at said structure surface coverage one deck photoresist 204; And the photoresist 204 of removal IO device area, form IO device ion and inject window.
Step S24 shown in Fig. 3 C, carries out ion injection of lightly-doped source drain region and bag-like region ion and injects in IO device grids 21 both sides, expansion area 205 is leaked in the source that forms the IO device.Remove photoresist 204 then.The injection ion that forms the lightly-doped source drain region ion injection of said IO device source leakage expansion area 205 is boron or boron fluoride; The injection ion that forms the bag-like region ion injection of said IO device source leakage expansion area 205 is boron or boron fluoride.
Step S25 carries out the thermal effect technology of boiler tube.The thermal effect process conditions of said boiler tube are: temperature is 500 ℃～1000 ℃, and the time minimum is 10 minutes.The thermal effect technology of said boiler tube can make the ions diffusion of injection and increase the degree of depth that said IO device source is leaked expansion area 205, and the source that makes is leaked the expansion area joint and become more gradual joint, thereby is not easy to take place leakage current, can improve the GIDL effect of IO device.
Step S26 is shown in Fig. 3 D, at said structure surface coverage one deck photoresist 206; And remove the photoresist 206 in core devices zone, form the core devices ion and inject window.
Step S27 shown in Fig. 3 D, carries out ion injection of lightly-doped source drain region and bag-like region ion and injects in said core devices grid 22 both sides, expansion area 207 is leaked in the source that forms core devices.Remove photoresist 206 then.The injection ion that forms the lightly-doped source drain region ion injection of leakage expansion area 207, said core devices source is boron or boron fluoride; The injection ion that forms the bag-like region ion injection of leakage expansion area 207, said core devices source is boron or boron fluoride.
Next adopt the technology of prior art to carry out the step that other forms the PMOS device.
In sum; The invention provides a kind of manufacturing approach of PMOS device; Leak in the ion implantation technology of expansion area in the source, the ion that leaks the source of PMOS IO device the expansion area injects the front that is placed on core devices, and the energy of injection is according to polysilicon gate thickness; High-octane as far as possible injection boron or boron fluoride ion, the energy that ion injects is restriction not punch polysilicon gate.After finishing the ion injection of IO device source leakage expansion area; The thermal effect technology that adds one boiler tube; The thermal effect technology of this road boiler tube can make the ions diffusion of injection and increase the degree of depth that said IO device source is leaked the expansion area; The source that makes is leaked the expansion area joint and is become more gradual joint, thereby is not easy to take place leakage current.Simultaneously, owing to when carrying out the thermal effect technology of said boiler tube, do not form the PMOS core devices as yet, thereby be not easy to produce the short-channel effect of PMOS core devices.Therefore, the manufacturing approach of PMOS device provided by the invention can be improved the GIDL effect of PMOS IO device, reduces the leakage current of device, and can avoid the PMOS core devices to produce short-channel effect.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (6)
1. a PMOS device making method is characterized in that, said method comprises the following steps:
On substrate, form gate oxide and polysilicon layer successively;
Said gate oxide and said polysilicon layer are carried out etching, form input and output device grid and core devices grid;
Cover photoresist in the core devices zone, expose input and output device zone;
Carry out ion injection of lightly-doped source drain region and bag-like region ion in said input and output device grid both sides and inject, the expansion area is leaked in the source that forms the input and output device, removes photoresist;
Carry out the thermal effect technology of boiler tube;
Cover photoresist in input and output device zone, expose the core devices zone;
Carry out ion injection of lightly-doped source drain region and bag-like region ion in said core devices grid both sides and inject, the expansion area is leaked in the source that forms core devices, removes photoresist.
2. the method for claim 1 is characterized in that, the injection ion that forms the lightly-doped source drain region ion injection of leakage expansion area, said input and output device source is boron or boron fluoride.
3. the method for claim 1 is characterized in that, the injection ion that forms the bag-like region ion injection of leakage expansion area, said input and output device source is boron or boron fluoride.
4. the method for claim 1 is characterized in that, the thermal effect process conditions of said boiler tube are: temperature is 500 ℃～1000 ℃, and the time minimum is 10 minutes.
5. the method for claim 1 is characterized in that, the injection ion that forms the lightly-doped source drain region ion injection of leakage expansion area, said core devices source is boron or boron fluoride.
6. the method for claim 1 is characterized in that, the injection ion that forms the bag-like region ion injection of leakage expansion area, said core devices source is boron or boron fluoride.
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| CN2011103662664A CN102437058A (en) | 2011-11-17 | 2011-11-17 | Manufacturing method of PMOS (P-channel Metal Oxide Semiconductor) device |
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| CN2011103662664A CN102437058A (en) | 2011-11-17 | 2011-11-17 | Manufacturing method of PMOS (P-channel Metal Oxide Semiconductor) device |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6117737A (en) * | 1999-02-08 | 2000-09-12 | Taiwan Semiconductor Manufacturing Company | Reduction of a hot carrier effect by an additional furnace anneal increasing transient enhanced diffusion for devices comprised with low temperature spacers |
| US6432776B1 (en) * | 1999-08-23 | 2002-08-13 | Nec Corporation | Method of manufacturing semiconductor device |
| CN101207085A (en) * | 2006-12-22 | 2008-06-25 | 中芯国际集成电路制造(上海)有限公司 | Manufacture method of semiconductor device |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6117737A (en) * | 1999-02-08 | 2000-09-12 | Taiwan Semiconductor Manufacturing Company | Reduction of a hot carrier effect by an additional furnace anneal increasing transient enhanced diffusion for devices comprised with low temperature spacers |
| US6432776B1 (en) * | 1999-08-23 | 2002-08-13 | Nec Corporation | Method of manufacturing semiconductor device |
| CN101207085A (en) * | 2006-12-22 | 2008-06-25 | 中芯国际集成电路制造(上海)有限公司 | Manufacture method of semiconductor device |
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Application publication date: 20120502 |