CN102437045A - Wet etching method and wet etching equipment - Google Patents
Wet etching method and wet etching equipment Download PDFInfo
- Publication number
- CN102437045A CN102437045A CN2011103884621A CN201110388462A CN102437045A CN 102437045 A CN102437045 A CN 102437045A CN 2011103884621 A CN2011103884621 A CN 2011103884621A CN 201110388462 A CN201110388462 A CN 201110388462A CN 102437045 A CN102437045 A CN 102437045A
- Authority
- CN
- China
- Prior art keywords
- chemical liquid
- wet etching
- wafer
- uniformity
- liquid medicine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Weting (AREA)
Abstract
The invention provides a wet etching method and wet etching equipment. The wet etching method comprises: a circular flow speed of a chemical liquid medicine in a chemical liquid medicine tank is controlled, thereby controlling uniformity inside an etched wafer and uniformity between etched wafers. Preferably, the circular flow speed of the chemical liquid medicine in the chemical liquid medicine tank is controlled to be a value of zero. According to the invention, on one hand, when a circular flow speed of a chemical liquid medicine is substantially reduced or stopped, the boundary layer thickness of a chemical is great or infinite as well as the bottom of the wafer is consistent with the top of the wafer; therefore, etched rate uniformity inside the wafer is good. On the other hand, because circulation of the chemical liquid medicine is substantially reduced or stopped, when the chemical liquid medicine is in a retarded state or a static state, the etched rate of the wafer surface will not be influenced by flow-out rates of the chemical liquid medicine at different portions of the chemical tank, so that etched rate uniformity between wafers is improved.
Description
Technical field
The present invention relates to field of manufacturing semiconductor devices, more particularly, the present invention relates to a kind of wet etching method and corresponding wet etching equipment.
Background technology
Wet etching is a technology common in the fabrication of semiconductor device.Wet etching is a kind of traditional lithographic method.In the wet etching process, silicon chip is soaked in the certain chemical reagent or reagent solution, makes not that a part of film surface sheltered by resist and reagent generation chemical reaction thus and is removed.As shown in Figure 1, the layer that is etched on the silicon substrate 30 has been arranged resist 10 on 20, not by resist 10 cover be etched regional A since the effect of chemical reagent be removed.
For example, with a kind of solution etching silicon dioxide film that contains hydrofluoric acid, with phosphoric acid etching aluminium film etc.This method of in liquid environment, carrying out etching is called " wet method " etching.The advantage of wet etching is easy and simple to handle; Low for equipment requirements; Be easy to realize producing in enormous quantities; The selectivity of etching is good.
In wet etching equipment, chemicals tank is used to wet etching wafer or preceding clean wafers therein.Chemicals tank separating liquid plate in the chemicals tank is used for changing the characteristic of chemicals tank liquid flow.Etching agent (for example hydrofluoric acid) and etching buffer solution are to uniformity all receives the design of chemicals tank separating liquid plate between uniformity and sheet in the sheet of the wet etch rate of the layer (for example silica membrane) that is etched, the chemical dispensed pipe designs and/or the inhomogeneity very big influence of flow di water.
Therefore, the hope proposition is a kind of can reduce or eliminate the design of chemicals tank separating liquid plate, the design of chemical dispensed pipe and/or flow di water uniformity to inhomogeneity influence between uniformity and sheet in the sheet of wet etch rate.
Summary of the invention
Technical problem to be solved by this invention be can reduce or eliminate the design of chemicals tank separating liquid plate to having above-mentioned defective in the prior art, providing a kind of, the chemical dispensed pipe designs and/or the flow di water uniformity to the wet etching equipment of inhomogeneity influence and wet etching ten thousand methods between uniformity and sheet in the sheet of wet etch rate.
According to a first aspect of the invention, a kind of wet etching method is provided, has it is characterized in that comprising: uniformity between uniformity and sheet in the sheet of the wafer after controlling etching through the circulation flow rate of control chemical liquid in the chemical liquid groove.
Preferably, the circulation flow rate of chemical liquid in the chemical liquid groove is controlled to be 13 liters/minute or 8 liters/minute.
Perhaps preferably, the circulation flow rate of chemical liquid in the chemical liquid groove is controlled to be 0.
According to a second aspect of the invention; A kind of wet etching equipment is provided; It is characterized in that comprising: the circulation flow rate control device, be used for controlling the circulation flow rate of chemical liquid at the chemical liquid groove, control in the sheet of the wafer after the etching uniformity between uniformity and sheet thus.
Preferably, said circulation flow rate control device is controlled to be 13 liters/minute or 8 liters/minute with the circulation flow rate of chemical liquid in the chemical liquid groove.
Perhaps preferably, said circulation flow rate control device is controlled to be 0 with the circulation flow rate of chemical liquid in the chemical liquid groove.
According to the present invention, reduce greatly or when stopping the circulation velocity of chemical liquid, the chemicals boundary layer thickness is very big or infinitely great and consistent with the top in bottom of wafer, so the interior good uniformity of the sheet of the wafer of etch rate.On the other hand; Through reducing or stop the circulation of chemical liquid greatly; Can make when chemical liquid is slow or inactive state that the wafer surface etch rate is receiving the different parts discharge rate influence of chemical liquid at chemical tank, so uniformity is improved between the sheet of etch rate.
Description of drawings
In conjunction with accompanying drawing, and, will more easily more complete understanding be arranged and more easily understand its attendant advantages and characteristic the present invention through with reference to following detailed, wherein:
Fig. 1 shows the sketch map of wet etching.
Fig. 2 shows the relation of the circulation velocity of boundary layer thickness and chemical liquid.
Need to prove that accompanying drawing is used to explain the present invention, and unrestricted the present invention.Notice that the accompanying drawing of expression structure possibly not be to draw in proportion.And in the accompanying drawing, identical or similar elements indicates identical or similar label.
Embodiment
In order to make content of the present invention clear more and understandable, content of the present invention is described in detail below in conjunction with specific embodiment and accompanying drawing.
When in the chemical liquid groove, wafer being carried out wet etching, chemical liquid circulates in the chemical liquid groove.The overall rate that chemical liquid circulates in the chemical liquid groove (perhaps average speed) can be described as circulation velocity.
And because chemical liquid input from the bottom of chemical liquid groove, chemical liquid is because the effect of self gravitation and the resistance of liquid, so chemical liquid is fast at chemical liquid trench bottom flow velocity, and at chemical liquid groove top the slow and convergence and zero of flow velocity.
The wafer surface etch rate is relevant at the chemicals boundary layer thickness of wafer surface with soup.To be diffused into wafer surface fast for reactant when the bed thickness of chemicals border, and it is also fast that wafer surface is left in the product diffusion, and the wafer surface chemical reaction velocity is fast; Otherwise to be diffused into wafer surface slow for reactant when the chemicals boundary layer is thin, and it is also slow that wafer surface is left in the product diffusion, and chemicals boundary layer LED reverse mounting type surface chemical reaction speed is slow.That is, chemicals border bed thickness etch rate is low, and the chemicals boundary layer is thin, and etch rate is high.
Fig. 2 shows the relation of the circulation velocity of chemicals boundary layer thickness and chemical liquid.Wherein, W shows the wafer in etching or the cleaning.
Specifically, the circulation velocity of chemicals boundary layer thickness and chemical liquid is relevant, and can represent through following formula:
Wherein, v representes the dynamic viscous coefficient of the liquid of chemical liquid, and U representes the chemical liquid principal flow velocity, and x representes the position on the wafer.
The flow velocity of chemical liquid is fast, chemicals border bed thickness; The flow velocity of chemical liquid is slow, and the chemicals boundary layer is thin.
When the circulation velocity of chemical liquid was high, chemical liquid was under the drag effect of the effect of self gravitation and liquid, and the trench bottom flow velocity is fast; Groove top flow velocity is slow; Corresponding bottom of wafer etch rate is fast, and wafer top etch rate is slow, so lack of homogeneity in the sheet of etch rate.
When the circulation velocity that reduces or stop chemical liquid greatly when (circulation velocity that stops chemical liquid representing that circulation velocity is 0), the chemicals boundary layer thickness is that infinity and bottom of wafer are consistent with the top, so good uniformity in the sheet of the wafer of etch rate.
And; The circulation that reduces greatly or stop chemical liquid can improving uniformity between the sheet of etch rate; Its concrete reason mainly is following reason: chemical liquid is when the circulating of groove, and the wafer surface etch rate receives the different parts discharge rate influence of chemical liquid at chemical tank; So; If reduce or stop the circulation of chemical liquid greatly; Can make when chemical liquid is slow or inactive state that the wafer surface etch rate is receiving the different parts discharge rate influence of chemical liquid at chemical tank, so uniformity is improved between the sheet of etch rate.
In concrete example of the present invention,, adopted the different circulation velocity of etching buffer solution (to be respectively 20 liters/minute through experiment; 13 liters/minute, 8 liters/minute and 0 liter/minute) verify and can find the present invention; Decline along with the circulation velocity of etching buffer solution; In the sheet of wafer between uniformity and sheet uniformity improve step by step, and stop circulation velocity (promptly 0 liter/minute, at this moment wafer is immersed in the static chemical liquid; Chemical liquid can continue the film on etched wafer surface) time, uniformity between interior uniformity of best sheet and sheet obtained.
Thus, the embodiment of the invention provides a kind of wet etching equipment and wet etching method, uniformity between uniformity and sheet in the sheet of the wafer after wherein controlling etching through the control circulation flow rate of chemical liquid in the chemical liquid groove.Preferably; In a concrete example, can the circulation flow rate of chemical liquid in the chemical liquid groove be controlled to be 13 liters/minute or 8 liters/minute, further preferably; In a concrete example, can the circulation flow rate of chemical liquid in the chemical liquid groove be controlled to be 0.
So; A kind of circulation flow rate control device of controlling the circulation flow rate of chemical liquid in the chemical liquid groove can be provided, any suitable known flow rate of liquid control device that this circulation flow rate control device can adopt those skilled in the art to find out.
It is understandable that though the present invention with the preferred embodiment disclosure as above, yet the foregoing description is not in order to limit the present invention.For any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the technology contents of above-mentioned announcement capable of using is made many possible changes and modification to technical scheme of the present invention, or is revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (6)
1. a wet etching method is characterized in that comprising: uniformity between uniformity and sheet in the sheet of the wafer after controlling etching through the circulation flow rate of control chemical liquid in the chemical liquid groove.
2. wet etching method according to claim 1 is characterized in that, the circulation flow rate of chemical liquid in the chemical liquid groove is controlled to be 13 liters/minute or 8 liters/minute.
3. wet etching method according to claim 1 is characterized in that, the circulation flow rate of chemical liquid in the chemical liquid groove is controlled to be 0.
4. wet etching equipment is characterized in that comprising: the circulation flow rate control device, be used for controlling the circulation flow rate of chemical liquid at the chemical liquid groove, and control in the sheet of the wafer after the etching uniformity between uniformity and sheet thus.
5. wet etching equipment according to claim 4 is characterized in that, said circulation flow rate control device is controlled to be 13 liters/minute or 8 liters/minute with the circulation flow rate of chemical liquid in the chemical liquid groove.
6. wet etching equipment according to claim 4 is characterized in that, said circulation flow rate control device is controlled to be 0 with the circulation flow rate of chemical liquid in the chemical liquid groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103884621A CN102437045A (en) | 2011-11-29 | 2011-11-29 | Wet etching method and wet etching equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103884621A CN102437045A (en) | 2011-11-29 | 2011-11-29 | Wet etching method and wet etching equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102437045A true CN102437045A (en) | 2012-05-02 |
Family
ID=45985041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103884621A Pending CN102437045A (en) | 2011-11-29 | 2011-11-29 | Wet etching method and wet etching equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102437045A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1091859A (en) * | 1993-01-20 | 1994-09-07 | 株式会社日立制作所 | Prevent the solution that impurity adheres in the liquid and use its caustic solution and device |
| JPH11214351A (en) * | 1998-01-13 | 1999-08-06 | Naoetsu Electronics Co Ltd | Etching method of silicon semiconductor wafer |
| CN2632848Y (en) * | 2003-05-27 | 2004-08-11 | 矽统科技股份有限公司 | Silicon wafer cleaning device |
| CN1683817A (en) * | 2004-01-06 | 2005-10-19 | 波克股份有限公司 | Apparatus, method and system for controlling fluid flow |
| CN201309966Y (en) * | 2008-12-11 | 2009-09-16 | 北京有色金属研究总院 | Basket for installing silicon chip on 12 inch silicon chip corroding machine |
-
2011
- 2011-11-29 CN CN2011103884621A patent/CN102437045A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1091859A (en) * | 1993-01-20 | 1994-09-07 | 株式会社日立制作所 | Prevent the solution that impurity adheres in the liquid and use its caustic solution and device |
| JPH11214351A (en) * | 1998-01-13 | 1999-08-06 | Naoetsu Electronics Co Ltd | Etching method of silicon semiconductor wafer |
| CN2632848Y (en) * | 2003-05-27 | 2004-08-11 | 矽统科技股份有限公司 | Silicon wafer cleaning device |
| CN1683817A (en) * | 2004-01-06 | 2005-10-19 | 波克股份有限公司 | Apparatus, method and system for controlling fluid flow |
| CN201309966Y (en) * | 2008-12-11 | 2009-09-16 | 北京有色金属研究总院 | Basket for installing silicon chip on 12 inch silicon chip corroding machine |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1898776B (en) | Apparatuses and methods for cleaning a substrate | |
| CN101379597B (en) | Semiconductor device manufacturing method and method for reducing microroughness of semiconductor surface | |
| US9852915B2 (en) | Etching apparatus | |
| JP2012526398A (en) | High productivity porous semiconductor layer forming equipment | |
| US20090239384A1 (en) | Substrate processing apparatus and substrate processing method | |
| JP2013258391A (en) | Generation method of chemical liquid for substrate processing, generation unit of chemical liquid for substrate processing, and substrate processing system | |
| US20080163890A1 (en) | Tunable megasonics cavitation process using multiple transducers for cleaning nanometer particles without structure damage | |
| CN114350367B (en) | Low-foam etching solution with uniform etching | |
| US11417542B2 (en) | Semiconductor processing apparatus and method | |
| CN102945854A (en) | Array substrate and manufacturing method of fan-out leads on array substrate and display device | |
| KR102075244B1 (en) | Substrate processing method and substrate processing apparatus | |
| CN102800679A (en) | Formation method for memory cell of flash memory | |
| JP2018019089A (en) | Chemical solution-producing method for processing substrate, chemical solution-producing unit for processing substrate, substrate processing method, and substrate processing system | |
| CN102437045A (en) | Wet etching method and wet etching equipment | |
| JPH0456321A (en) | Cleaning device for semiconductor wafer | |
| JP2010040758A (en) | Substrate processing apparatus | |
| CN102496560A (en) | Wet-process etching cleaning device and wet-process etching cleaning method | |
| CN104975293A (en) | Silicon substrate and preparation method thereof | |
| CN102437014A (en) | Wet etching cleaning device | |
| CN209094013U (en) | A kind of wet-cleaning device | |
| JP2008021920A (en) | Apparatus and method for etching semiconductor substrate | |
| CN102817082A (en) | Preparation method for silicon films | |
| CN108447799B (en) | Wet chemical treatment apparatus and method of using same | |
| JP2013161811A (en) | Method and apparatus for cleaning substrate | |
| CN111834250B (en) | Rotary etching structure of semiconductor chip production and preparation system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140507 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20140507 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
|
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120502 |