CN102436998A - Field emission display panel - Google Patents
Field emission display panel Download PDFInfo
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- CN102436998A CN102436998A CN2011103942203A CN201110394220A CN102436998A CN 102436998 A CN102436998 A CN 102436998A CN 2011103942203 A CN2011103942203 A CN 2011103942203A CN 201110394220 A CN201110394220 A CN 201110394220A CN 102436998 A CN102436998 A CN 102436998A
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- 239000000758 substrate Substances 0.000 claims abstract description 31
- 230000004888 barrier function Effects 0.000 claims description 20
- 239000000725 suspension Substances 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 15
- 239000007769 metal material Substances 0.000 description 12
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
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- 230000015572 biosynthetic process Effects 0.000 description 2
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- 239000011195 cermet Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
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- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
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- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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Abstract
A field emission display panel. The substrate at least comprises a display area and a non-display area. The first conductive layer is disposed in the display area and includes a first electrode line and a first electrode electrically connected to the first electrode line. The resistance material layer is located on the first conductive layer in the display region. The insulating layer covers the resistance material layer in the display area and is provided with a first opening and a second opening, the first opening exposes part of the resistance material layer above the first electrode, and the second opening exposes part of the resistance material layer above the first electrode wire. The electron emission element is disposed on the resistive material layer exposed by the first opening. The second conductive layer is disposed on the insulating layer and in the second opening, wherein the second conductive layer includes a second electrode line and a second electrode electrically connected to the second electrode line, the second electrode has a third opening to expose the electron emitting device, and the second electrode line and the first electrode line at least define a first sub-pixel region and a second sub-pixel region.
Description
Technical field
The invention relates to a kind of display floater, and particularly relevant for a kind of emission-type display floater.
Background technology
In general; Field emission-type display floater mainly is under the environment (less than 10-6 Tao Er) at ultra high vacuum; On negative electrode, make electron transmitting terminal (electron emitter), and utilize the micro-structural of high-aspect-ratio in the electron transmitting terminal (high aspect ratio) to help work function (work function) and the disengaging negative electrode that electronics overcomes negative electrode.In addition, in the emission display floater on the scene,, and electronics is derived by the electron transmitting terminal of negative electrode, see through effect of electric field and phosphor powder on the direct impinge anode, promptly can send visible light by the high electric field between negative electrode and anode if on anode, be coated with phosphor powder.
The problem that present field emission-type display floater is faced is that the uniformity of the luminosity of display floater is not enough.Change speech, in traditional field emission-type display floater, the electric current of the electron transmitting terminal of subregion with another partly the electric current of regional electron transmitting terminal have evident difference, so will cause the uniformity of luminosity of integral body of display floater not good.
Summary of the invention
The present invention provides a kind of emission-type display floater, and it can improve the not enough problem of the uniformity of a tradition emission-type display floater luminosity.
The present invention proposes a kind of emission-type display floater, and it comprises substrate, first resistive element, first conductive pattern, electronic emission element, second resistive element, second conductive pattern and conductive layer.Substrate has viewing area and non-display area at least, and the viewing area comprises first sub-pixel area and second sub-pixel area at least.First resistive element is arranged in first sub-pixel area and second sub-pixel area, and wherein the resistance value of first resistive element in first sub-pixel area is different from the resistance value of first resistive element in second sub-pixel area.First conductive pattern connects an end of first resistive element in first sub-pixel area and an end of first resistive element in second sub-pixel area.Electronic emission element is arranged in first sub-pixel area and second sub-pixel area, and connects the other end of first resistive element in first sub-pixel area and the other end of first resistive element in second sub-pixel area.Second resistive element is arranged in first sub-pixel area and second sub-pixel area, and wherein the resistance value of second resistive element in first sub-pixel area is different from the resistance value of second resistive element in second sub-pixel area.Second conductive pattern connects an end of second resistive element in first sub-pixel area and an end of second resistive element in second sub-pixel area.Conductive layer connects the other end of second resistive element in first sub-pixel area and the other end of second resistive element in second sub-pixel area, wherein conductive layer around and suspension joint in electronic emission element.
This first resistive element and this second resistive element comprise resistance elements.
This first conductive pattern and this second conductive pattern are to be made up of same rete.
This conductive layer be positioned at this first resistive element, this second resistive element, this first conductive pattern and this second conductive pattern on.
Further comprise an insulating barrier, be positioned at the following of this conductive layer and do not cover this electronic emission element.
When this first resistive element and this second resistive element were projected on this substrate, this first resistive element did not overlap with this second resistive element.
The voltage that this conductive layer transmitted gives this electronic emission element via this second resistive element of this first sub-pixel area electric current is identical in fact with the voltage that this conductive layer is transmitted gives this electronic emission element via second resistive element of this second sub-pixel area electric current.
The present invention proposes a kind of emission-type display floater in addition, comprises substrate, first conductive layer, resistance elements, insulating barrier, electronic emission element and second conductive layer.Substrate comprises viewing area and non-display area at least.First conductive layer is arranged in the viewing area, and first conductive layer comprises first electrode wires and first electrode that electrically connects with first electrode wires.Resistance elements is arranged on first conductive layer of viewing area.Insulating barrier is covered on the resistance elements in the viewing area; And insulating barrier has first opening and second opening; First opening exposes the part resistance elements of position above first electrode, and second opening exposes the part resistance elements of position above first electrode wires.Electronic emission element is arranged on the resistance elements that is come out by first opening.Second conductive layer is arranged at and reaches in second opening on the insulating barrier; Wherein second conductive layer comprises second electrode wires and second electrode that electrically connects with second electrode wires; And second electrode has the 3rd opening exposing electronic emission element, and second electrode wires and first electrode wires define first sub-pixel area and second sub-pixel area at least.
The area that this second opening in this first sub-pixel area is projected to this substrate is different in essence and is projected to the area of this substrate in second opening in this second sub-pixel area.
This second conductive layer contact is arranged in the surface of this resistance elements of this second opening.
This second opening in this first sub-pixel area is to be positioned at this first electrode wires and this second electrode wires staggered place.
This second opening in this second sub-pixel area is to be positioned at this first electrode wires and this second electrode wires staggered place.
The junction of this first electrode wires and this first electrode has a gap, so that this first electrode wires and this first electrode separation.
The area that this first opening in this first sub-pixel area is projected to this substrate is different in essence and is projected to the area of this substrate in this first opening in this second sub-pixel area.
This electronic emission element area in this first sub-pixel area is different in essence in this electronic emission element area in this second sub-pixel area.
Based on above-mentioned, first sub-pixel area of the present invention's emission-type display floater on the scene and second sub-pixel area are provided with first resistive element and second resistive element separately.Particularly; The resistance value of first resistive element in first sub-pixel area is different from the resistance value of first resistive element in second sub-pixel area, and the resistance value of second resistive element in first sub-pixel area is different from the resistance value of second resistive element in second sub-pixel area.First sub-pixel area that being provided with of the first above-mentioned resistive element and second resistive element can be reduced an emission-type display floater and the difference of the electric current that electronic emission element produced in second sub-pixel area, and then improve a uniformity of the luminosity of emission-type display floater.
For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and cooperates appended graphic elaborating as follows.
Description of drawings
Fig. 1 looks sketch map on the emission-type display floater according to an embodiment of the invention.
Fig. 2 A is the equivalent circuit diagram of first sub-pixel area of the field emission-type display floater of Fig. 1.
Fig. 2 B be Fig. 1 field emission-type display floater first sub-pixel area on look sketch map.
Fig. 2 C is the generalized section along hatching I-I ' and II-II ' of Fig. 2 B.
Fig. 2 D be according to another embodiment field emission-type display floater first sub-pixel area on look sketch map.
Fig. 3 A is the equivalent circuit diagram of second sub-pixel area of the field emission-type display floater of Fig. 1.
Fig. 3 B be Fig. 1 field emission-type display floater second sub-pixel area on look sketch map.
Fig. 3 C is the generalized section along hatching I-I ' and II-II ' of Fig. 3 B.
Fig. 3 D be according to another embodiment field emission-type display floater second sub-pixel area on look sketch map.
Description of reference numerals
100: substrate A: viewing area
B: non-display area P1: first sub-pixel area
P2: the second sub-pixel area Ra-1: first resistive element
Rb-1: the second resistive element Ro-1: resistance
Va-1, Vb-1, V1, Vg-1, HV1L: voltage
110-1: 102: the first conductive layers of electronic emission element
102a-1,102a-2: first electrode (first conductive pattern)
102b-1,102b-2,102c-1,102c-2: first electrode wires (second conductive pattern)
103: resistance elements 104: insulating barrier
106: the second conductive layer 106a-1,106a-2: second electrode
106b-1,106b-2: the second electrode wires Oa-1, Oa-2: first opening
Ob-1, Ob-2: the second opening Oc-1,0c-2: the 3rd opening
Embodiment
Fig. 1 looks sketch map on the emission-type display floater according to an embodiment of the invention.Please with reference to Fig. 1, the field emission-type display floater of present embodiment comprises substrate 100.According to present embodiment, the material of substrate 100 can be glass, quartz, polymer or light tight/reflecting material (for example: electric conducting material, metal, wafer, pottery or other material applicatory) or other material applicatory.Substrate 100 has viewing area A and non-display area B at least, and non-display area B is centered around around the A of viewing area.In addition, the sub-pixel area that in the A of viewing area, has a plurality of arrayed.In Fig. 1, only indicate the first sub-pixel area P1 and the second sub-pixel area P2 to specify.The first sub-pixel area P1 and the second sub-pixel area P2 are that the edge and the central authorities that lay respectively at viewing area A explain for example, but the invention is not restricted to this.According to other embodiment, the first sub-pixel area P1 and the second sub-pixel area P2 also can be positioned at the edge of viewing area A, or all are positioned at the central authorities near viewing area A.
Below will elaborate to the structure in the above-mentioned first sub-pixel area P1 earlier.Fig. 2 A is the equivalent circuit diagram of first sub-pixel area of the field emission-type display floater of Fig. 1.Fig. 2 B be Fig. 1 field emission-type display floater first sub-pixel area on look sketch map.Fig. 2 C is the generalized section along hatching I-I ' and II-II ' of Fig. 2 B.
Please be simultaneously with reference to Fig. 2 A, Fig. 2 B and Fig. 2 C, in the first sub-pixel area P1, comprise being provided with first conductive layer 102, resistance elements 103, insulating barrier 104, electronic emission element 110-1 and second conductive layer 106.
First conductive layer 102 comprises the first electrode wires 102b-1 and the first electrode 102a-1 that electrically connects with the first electrode wires 102b-1.At this, the first electrode 102a-1 of first conductive layer 102 can be described as first conductive pattern, and the first electrode wires 102b-1 of first conductive layer 102 can be described as second conductive pattern.Therefore, in the present embodiment, first conductive pattern (the first electrode 102a-1) is by 102 formations of same rete (first conductive layer) with second conductive pattern (first electrode wires) 102b-1, but the invention is not restricted to this.According to other embodiment, first conductive pattern (the first electrode 102a-1) is made up of different rete with second conductive pattern (first electrode wires) 102b-1.Based on considering of conductivity, first conductive layer 102 generally is to use metal material.So, the invention is not restricted to this, according to other embodiment, first conductive layer 102 also can use other electric conducting materials.For example: the nitrogen oxide of the nitride of alloy, metal material, the oxide of metal material, metal material or other suitable material) or the stack of layers of metal material and other electric conducting material.
Insulating barrier 104 covers resistance elements 103, and insulating barrier 104 has the first opening Oa-1 and the second opening Ob-1.The first opening Oa-1 exposes the part resistance elements 103 of position in first electrode (first conductive pattern) 102a-1 top, and the second opening Ob-1 exposes the part resistance elements 103 of position in first electrode wires (second conductive pattern) 102b-1 top.
Electronic emission element 110-1 is arranged to be insulated on the resistance elements 103 that layer 104 the first opening Oa-1 come out.Therefore, electronic emission element 110-1 is the other end that connects the first resistive element Ra-1 among the first sub-pixel area P1.Electronic emission element 110-1 can be cone, carbon nanotube electron transmitting terminal or other kinds point discharge form electronic transmitting terminal or the combination of above-mentioned two kinds of transmitting terminals of metal material.The present invention does not limit the number of electronic emission element 110-1 set in the first subpixel area P1.Change speech, the number of set electronic emission element 110-1 can be more than the graphic number that illustrates in the first subpixel area P1.Moreover the present invention does not limit the existing zone of electronic emission element 110-1 set in the first subpixel area P1 only to be used as an electron-emitting area yet.Change speech, in the first subpixel area P1, a plurality of electron-emitting areas can be set.
Second conductive layer 106 is arranged on the insulating barrier 104 and inserts among the second opening Ob-1.According to present embodiment, second conductive layer 106 more contacts the surface of the resistance elements 103 that is arranged in the second opening Ob-1.In addition, second conductive layer 106 around and suspension joint in electronic emission element 110-1.Change speech, second conductive layer 106 be looped around electronic emission element 110-1 around and do not link together with electronic emission element 110-1.
According to present embodiment, second conductive layer 106 comprises the second electrode wires 106b-1 and the second electrode 106a-1 that electrically connects with the second electrode wires 106b-1.The second electrode 106a-1 of second conductive layer 106 has the 3rd opening Oc-1 exposing electronic emission element 110-1, and the second electrode wires 106b-1 of second conductive layer 106 connects the other end of the second resistive element Rb-1 among the first sub-pixel area P1.In addition, insulating barrier 104 is to be positioned at the following of second conductive layer 106 and not cover electronic emission element 110-1.And second conductive layer 106 be positioned on the first resistive element Ra-1, the second resistive element Rb-1, the first conductive pattern 102a-1 and the second conductive pattern 102b-1.Based on considering of conductivity, second conductive layer 106 generally is to use metal material.So, the invention is not restricted to this, according to other embodiment, second conductive layer 106 also can use other electric conducting materials.For example: the nitrogen oxide of the nitride of alloy, metal material, the oxide of metal material, metal material or other suitable material) or the stack of layers of metal material and other electric conducting material.
According to present embodiment, the bearing of trend of the bearing of trend of the above-mentioned second electrode wires 106b-1 and the first electrode wires 102b-1 is not parallel, and preferably, the bearing of trend of the second electrode wires 106b-1 is vertical with the bearing of trend of the first electrode wires 102b-1.Therefore, the second electrode wires 106b-1 and the first electrode wires 102b-1 define the first sub-pixel area P1.In addition, in this embodiment, the second opening Ob-1 among the first sub-pixel area P1 is positioned at the first electrode wires 102b-1 and the second electrode wires 106b-1 staggered place.
In the embodiment of Fig. 2 B, first conductive layer 102 among the first sub-pixel area P1 is to comprise the first electrode wires 102b-1 and the first electrode 102a-1.So, the invention is not restricted to this.According to other embodiment, shown in Fig. 2 D, first conductive layer 102 among the first sub-pixel area P1 except comprise the first electrode 102a-1, first electrode wires is to be made up of 102b-1 and 102c-1.The junction of the first electrode wires 102c-1 and the first electrode 102a-1 has the gap, so that the first electrode wires 102c-1 separates with the first electrode 102a-1.And the second opening Ob-1 that exposes the second resistive element Rb-1 is the staggered place that correspondence is arranged on the first electrode wires 102c-1 and the second electrode wires 106b-1.At this, the first electrode wires 102c-1 and the first electrode wires 102b-1 can be connected to corresponding voltage Va-1, Vb-1 separately, and voltage Va-1, Vb-1 can be identical or inequality.
In the first sub-pixel area P1 of present embodiment; Shown in Fig. 2 A; When external circuit gives the first sub-pixel area P1 voltage V1; The magnitude of voltage of the entering first subpixel area P1 is Vg-1 after the resistance R o-1 of outside line consumption, and voltage Vg-1 and voltage HV1 will drive electronic emission element 110-1 generation discharge.
Then, be that the interior structure of the second sub-pixel area P2 that is directed against the field emission-type display floater of present embodiment elaborates.Fig. 3 A is the equivalent circuit diagram of second sub-pixel area of the field emission-type display floater of Fig. 1.Fig. 3 B be Fig. 1 field emission-type display floater second sub-pixel area on look sketch map.Fig. 3 C is the generalized section along hatching I-I ' and II-II ' of Fig. 3 B.
Please be simultaneously with reference to Fig. 3 A, Fig. 3 B and Fig. 3 C, in the second sub-pixel area P2, comprise being provided with first conductive layer 102, resistance elements 103, insulating barrier 104, electronic emission element 110-2 and second conductive layer 106.
First conductive layer 102 comprises the first electrode wires 102b-2 and the first electrode 102a-2 that electrically connects with the first electrode wires 102b-2.At this, the first electrode 102a-2 of first conductive layer 102 can be described as first conductive pattern, and the first electrode wires 102b-2 of first conductive layer 102 can be described as second conductive pattern.Therefore, in the present embodiment, first conductive pattern (the first electrode 102a-2) is by 102 formations of same rete (first conductive layer) with second conductive pattern (first electrode wires) 102b-2.
Similarly, the resistance elements 103 of the second sub-pixel area P2 is positioned on first conductive layer 102.Resistance elements 103 is as the first resistive element Ra-2 in the top of first conductive pattern (the first electrode 102a-2), and the end of the first resistive element Ra-2 connects the first conductive pattern 102a-2.Resistance elements 103 is as the second resistive element Rb-2 in second conductive pattern (first electrode wires) 102b-2 top, and the end of the second resistive element Rb-21 connects the second conductive pattern 102b-2.In addition, when the first resistive element Ra-2 and the second resistive element Rb-2 are projected to 100 last times of substrate, the first resistive element Ra-2 does not overlap with the second resistive element Rb-2.
What deserves to be mentioned is that in this emission-type display floater, the resistance value of the first resistive element Ra-1 among the first sub-pixel area P1 is different from the resistance value of the first resistive element Ra-2 of P2 in second sub-pixel area.And the resistance value of the second resistive element Rb-1 among the first sub-pixel area P1 is different from the resistance value of the second resistive element Rb-2 among the second sub-pixel area P2.
Insulating barrier 104 covers resistance elements 103, and insulating barrier 104 has the first opening Oa-2 and the second opening Ob-2.The first opening Oa-2 exposes the part resistance elements 103 of position in first electrode (first conductive pattern) 102a-2 top, and the second opening Ob-2 exposes the part resistance elements 103 of position in first electrode wires (second conductive pattern) 102b-2 top.
What deserves to be mentioned is that according to an embodiment, the area that the first opening Oa-1 among the first sub-pixel area P1 is projected to substrate 100 is different in essence and is projected to the area of substrate 100 in the first opening Oa-2 in the second sub-pixel area P2.So, the invention is not restricted to this, in other embodiments, it is suitable with the area that the first opening Oa-2 in the second sub-pixel area P2 is projected to substrate 100 that the first opening Oa-1 among the first sub-pixel area P1 is projected to the area of substrate 100.In addition, according to an embodiment, the area that the second opening Ob-1 among the first sub-pixel area P1 is projected to substrate 110 is different in essence and is projected to the area of substrate 100 in the second opening Ob-2 in the second sub-pixel area P2.So, the invention is not restricted to this, in other embodiments, the area that the area that the second opening Ob-1 among the first sub-pixel area P1 is projected to substrate 110 also can be projected to substrate 100 with the second opening Ob-2 among the second sub-pixel area P2 is suitable.
Electronic emission element 110-2 is arranged to be insulated on the resistance elements 103 that layer 104 the first opening Oa-2 come out.Therefore, electronic emission element 110-2 connects the other end of the first resistive element Ra-2 among the second sub-pixel area P2.Electronic emission element 110-2 can be cone, carbon nanotube electron transmitting terminal or other kinds point discharge form electronic transmitting terminal or the combination of above-mentioned two kinds of transmitting terminals of metal material.The present invention does not limit the number of electronic emission element 110-2 set in the second sub-pixel area P2.Change speech, the number of set electronic emission element 110-2 can be more than the graphic number that illustrates in the second sub-pixel area P2.Moreover the present invention does not limit the existing zone of electronic emission element 110-1 set in the first subpixel area P1 only to be used as an electron-emitting area yet.Change speech, in the first subpixel area P1, a plurality of electron-emitting areas can be set.In addition, second conductive layer 106 around and suspension joint in electronic emission element 110-2.Change speech, second conductive layer 106 be looped around electronic emission element 110-2 around and do not link together with electronic emission element 110-2.
What deserves to be mentioned is that the area of the electronic emission element 110-1 in the first sub-pixel area P1 is different in essence in the electronic emission element 110-2 area in the second sub-pixel area P2.But, the invention is not restricted to this, according to other embodiment, the area of the electronic emission element 110-1 in the first sub-pixel area P1 in fact with the second sub-pixel area P2 in electronic emission element 110-2 area suitable.
Second conductive layer 106 is arranged on the insulating barrier 104 and inserts among the second opening Ob-2.According to present embodiment, second conductive layer 106 more contacts the surface of the resistance elements 103 that is arranged in the second opening Ob-2.Second conductive layer 106 comprises the second electrode wires 106b-2 and the second electrode 106a-2 that electrically connects with the second electrode wires 106b-2.The second electrode 106a-2 of second conductive layer 106 has the 3rd opening Oc-2 exposing electronic emission element 110-2, and the second electrode wires 106b-2 of second conductive layer 106 connects the other end of the second resistive element Rb-2 among the second sub-pixel area P2.In addition, insulating barrier 104 is to be positioned at the following of second conductive layer 106 and not cover electronic emission element 110-2.And second conductive layer 106 be positioned on the first resistive element Ra-2, the second resistive element Rb-2, the first conductive pattern 102a-2 and the second conductive pattern 102b-2.
According to present embodiment, the bearing of trend of the bearing of trend of the above-mentioned second electrode wires 106b-2 and the first electrode wires 102b-2 is not parallel, and preferably, the bearing of trend of the second electrode wires 106b-2 is vertical with the bearing of trend of the first electrode wires 102b-2.Therefore, the second electrode wires 106b-2 and the first electrode wires 102b-2 define the second sub-pixel area P2.In addition, in this embodiment, the second opening Ob-2 among the second sub-pixel area P2 is positioned at the first electrode wires 102b-2 and the second electrode wires 106b-2 staggered place.
In the embodiment of Fig. 3 B, first conductive layer 102 among the second sub-pixel area P2 is to comprise the first electrode wires 102b-2 and the first electrode 102a-2.So, the invention is not restricted to this.According to other embodiment, shown in Fig. 3 D, first conductive layer 102 among the second sub-pixel area P2 except comprise the first electrode 102a-2, first electrode wires is to be made up of 102b-2 and 102c-2.The junction of the first electrode wires 102c-2 and the first electrode 102a-2 has the gap, so that the first electrode wires 102c-2 separates with the first electrode 102a-2.And the second opening Ob-2 that exposes the second resistive element Rb-2 is the staggered place that correspondence is arranged on the first electrode wires 102c-2 and the second electrode wires 106b-2.At this, the first electrode wires 102c-2 and first electrode wires are can be connected to corresponding voltage Va-2, Vb-2 separately by 102b-2, and voltage Va-2, Vb-2 can be identical or inequality.
In the second sub-pixel area P2 of present embodiment; Shown in Fig. 3 A; When external circuit gives the second sub-pixel area P2 voltage V2; The magnitude of voltage of the entering second sub-pixel area P2 is Vg-2 after the resistance R o-2 of outside line consumption, and voltage Vg-2 and voltage HV2 will drive electronic emission element 110-2 generation discharge.
Hold the above, in the emission-type display floater of the field of present embodiment, have the first resistive element Ra-1 and the second resistive element Rb-1 among the first sub-pixel area P1, and have the first resistive element Ra-2 and the second resistive element Rb-2 among the second sub-pixel area P2.Particularly, the resistance value of the first resistive element Ra-1 among the first sub-pixel area P1 is different from the resistance value of the first resistive element Ra-2 of P2 in second sub-pixel area.And the resistance value of the second resistive element Rb-1 among the first sub-pixel area P1 is different from the resistance value of the second resistive element Rb-2 among the second sub-pixel area P2.Therefore, the voltage Vg-1 that is transmitted when second conductive layer 106 gives electronic emission element 110-1 via the second resistive element Rb-1 of the first sub-pixel area P1 electric current can give electronic emission element 110-2 with the voltage Vg-2 that second conductive layer 106 is transmitted via the second resistive element Rb-2 of the second sub-pixel area P2 electric current is identical in fact.
Change speech; In present embodiment each sub-pixel area first resistive element and second resistive element are set by emission-type display floater on the scene; Can be so that the otherness of the electric current of the electronics emission unit of all sub-pixel area of emission-type display floater diminish, and then reach and improve a uniformity of the luminosity of emission-type display floater.
What must explain is; In the foregoing description; The first opening Oa-1, the second opening Ob-1, the described number of the 3rd opening Oc-1 and shape is neither is limited to described in the embodiment; For example: the first opening Oa-1/Oa-2, the second opening Ob-1/Ob-2, each other number of the 3rd opening Oc-1/Oc-2, can at least more than one.The first opening Oa-1/Oa-2, the second opening Ob-1/Ob-2, each other shape of the 3rd opening Oc-1/Oc-2 comprise circle, rectangle, triangle, rhombus, pentagon, hexagon, star, flower shape, arc, polygon, zigzag, gear shape or other suitable shape or above-mentioned wantonly two kinds combination.In addition, the first opening Oa-1/Oa-2, the second opening Ob-1/Ob-2, the 3rd opening Oc-1/Oc-2 are not restrictive condition during each other chi yet.
Below row cite an actual example and comparative example in each sub-pixel area that emission-type display floater on the scene is described first resistive element to be set and second resistive element can improve a uniformity of the luminosity of emission-type display floater really.
Instance
In the emission-type display floater of the field of this instance, first resistive element and second resistive element are set in each sub-pixel area, wherein the structure of the sub-pixel area of the field emission-type display floater of this instance is promptly shown in Fig. 2 A-Fig. 2 C or Fig. 3 A-Fig. 3 C.In addition, in this example, the voltage that external circuit gives each sub-pixel area all is about 35V, and the resistance value of external circuit is about 3K Ω, and first conductive layer 102 (first electrode and first electrode wires) is about 0V.When the wherein three subpixels districts ( sub-pixel area 1,2,3) for the field emission-type display floater of this instance when electrically measuring, can obtain the result like table 1.
Table 1
Comparative example
In the emission-type display floater of the field of this comparative example, only be provided with first resistive element in each sub-pixel area, and second resistive element is not set.In addition, in this comparative example, the voltage that external circuit gives each sub-pixel area all is about 30V, and the resistance value of external circuit is about 3K Ω, and negative electrode is about 0V.When the wherein three subpixels districts ( sub-pixel area 1,2,3) for the field emission-type display floater of this instance when electrically measuring, can obtain the result like table 2.
Table 2
Can know by above-mentioned instance, when in each sub-pixel area in the emission-type display floater on the scene first resistive element and second resistive element being set, can make a uniformity of the electric current of the electronic emission element of emission-type display floater (IRa) up to about 72.8%.If in each sub-pixel area in the emission-type display floater on the scene first resistive element only is set, the uniformity of the electric current (IRa) of the electronic emission element of an emission-type display floater only has an appointment 66.7%.Therefore, first resistive element and second resistive element are set in each sub-pixel area in the present invention's emission-type display floater on the scene and can reach a luminance uniformity that improves field emission-type display floater really.
Though the present invention with embodiment openly as above; Right its is not in order to limit the present invention; Any those skilled in the art are not breaking away from the spirit and scope of the present invention, when doing a little change and retouching, so protection scope of the present invention is when being as the criterion with claims.
Claims (15)
1. field emission-type display floater comprises:
One substrate has a viewing area and a non-display area at least, and this viewing area comprises one first sub-pixel area and one second sub-pixel area at least;
One first resistive element is arranged in this first sub-pixel area and this second sub-pixel area, and wherein the resistance value of this first resistive element in this first sub-pixel area is different from the resistance value of this first resistive element in this second sub-pixel area;
One first conductive pattern connects an end of this first resistive element in this first sub-pixel area and an end of this first resistive element in this second sub-pixel area;
One electronic emission element is arranged in this first sub-pixel area and this second sub-pixel area, and connects the other end of this first resistive element in this first sub-pixel area and the other end of this first resistive element in this second sub-pixel area;
One second resistive element is arranged in this first sub-pixel area and this second sub-pixel area, and wherein the resistance value of this second resistive element in this first sub-pixel area is different from the resistance value of this second resistive element in this second sub-pixel area;
One second conductive pattern connects an end of this second resistive element in this first sub-pixel area and an end of this second resistive element in this second sub-pixel area; And
One conductive layer connects the other end of this second resistive element in this first sub-pixel area and the other end of this second resistive element in this second sub-pixel area, wherein this conductive layer around and suspension joint in this electronic emission element.
2. as claimed in claim 1 emission-type display floater is characterized in that this first resistive element and this second resistive element comprise resistance elements.
3. as claimed in claim 1 emission-type display floater is characterized in that this first conductive pattern and this second conductive pattern are to be made up of same rete.
4. emission-type display floater as claimed in claim 1 is characterized in that, this conductive layer be positioned at this first resistive element, this second resistive element, this first conductive pattern and this second conductive pattern on.
5. as claimed in claim 1 emission-type display floater is characterized in that, further comprises an insulating barrier, is positioned at the following of this conductive layer and do not cover this electronic emission element.
6. as claimed in claim 1 emission-type display floater is characterized in that, when this first resistive element and this second resistive element were projected on this substrate, this first resistive element did not overlap with this second resistive element.
7. as claimed in claim 1 emission-type display floater; It is characterized in that the voltage that this conductive layer transmitted gives this electronic emission element via this second resistive element of this first sub-pixel area electric current is identical in fact with the voltage that this conductive layer is transmitted gives this electronic emission element via second resistive element of this second sub-pixel area electric current.
8. field emission-type display floater comprises:
One substrate, it comprises a viewing area and a non-display area at least;
One first conductive layer is arranged in this viewing area, and this first conductive layer comprises first electrode wires and one first electrode that electrically connects with this first electrode wires;
One resistance elements is arranged on this first conductive layer of this viewing area;
One insulating barrier; Be covered on this resistance elements in this viewing area; And this insulating barrier has one first opening and one second opening; This first opening exposes position this resistance elements of part above this first electrode, and this second opening exposes position this resistance elements of part above this first electrode wires;
One electronic emission element is arranged on this resistance elements that is come out by this first opening;
One second conductive layer; Be arranged at and reach in this second opening on this insulating barrier; Wherein this second conductive layer comprises one second electrode wires and one second electrode that electrically connects with this second electrode wires; And this second electrode has one the 3rd opening exposing this electronic emission element, and this second electrode wires and this first electrode wires define one first sub-pixel area and one second sub-pixel area at least.
9. as claimed in claim 8 emission-type display floater is characterized in that the area that this second opening in this first sub-pixel area is projected to this substrate is different in essence and is projected to the area of this substrate in second opening in this second sub-pixel area.
10. as claimed in claim 8 emission-type display floater is characterized in that, this second conductive layer contact is arranged in the surface of this resistance elements of this second opening.
11. as claimed in claim 8 emission-type display floater is characterized in that this second opening in this first sub-pixel area is to be positioned at this first electrode wires and this second electrode wires staggered place.
12. as claimed in claim 8 emission-type display floater is characterized in that this second opening in this second sub-pixel area is to be positioned at this first electrode wires and this second electrode wires staggered place.
13. as claimed in claim 8 emission-type display floater is characterized in that the junction of this first electrode wires and this first electrode has a gap, so that this first electrode wires and this first electrode separation.
14. as claimed in claim 8 emission-type display floater is characterized in that the area that this first opening in this first sub-pixel area is projected to this substrate is different in essence and is projected to the area of this substrate in this first opening in this second sub-pixel area.
15. as claimed in claim 8 emission-type display floater is characterized in that this electronic emission element area in this first sub-pixel area is different in essence in this electronic emission element area in this second sub-pixel area.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| TW100128741A TWI475925B (en) | 2011-08-11 | 2011-08-11 | Field emitting display panel |
| TW100128741 | 2011-08-11 |
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| CN102436998A true CN102436998A (en) | 2012-05-02 |
| CN102436998B CN102436998B (en) | 2014-06-04 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1109205A (en) * | 1993-11-29 | 1995-09-27 | 双叶电子工业株式会社 | Field emission type electron source |
| CN1722341A (en) * | 2004-06-29 | 2006-01-18 | 三星Sdi株式会社 | Electron emission device and electron emission display using the same |
| US20060192492A1 (en) * | 2005-02-28 | 2006-08-31 | Nobuyuki Ushifusa | Display panel |
| CN1953130A (en) * | 2005-10-18 | 2007-04-25 | 中原工学院 | Flat active display with goniometric ballast structure and manufacturing technique thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2686027Y (en) * | 2004-01-17 | 2005-03-16 | 东元奈米应材股份有限公司 | Field transmitting display panel feed back circuit with uniform distribution brightness |
| TWI272870B (en) * | 2005-11-18 | 2007-02-01 | Tatung Co | Field emission display device |
| TW200829074A (en) * | 2006-12-29 | 2008-07-01 | Tatung Co Ltd | Field emitting display apparatus |
-
2011
- 2011-08-11 TW TW100128741A patent/TWI475925B/en not_active IP Right Cessation
- 2011-11-29 CN CN201110394220.3A patent/CN102436998B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1109205A (en) * | 1993-11-29 | 1995-09-27 | 双叶电子工业株式会社 | Field emission type electron source |
| CN1722341A (en) * | 2004-06-29 | 2006-01-18 | 三星Sdi株式会社 | Electron emission device and electron emission display using the same |
| US20060192492A1 (en) * | 2005-02-28 | 2006-08-31 | Nobuyuki Ushifusa | Display panel |
| CN1953130A (en) * | 2005-10-18 | 2007-04-25 | 中原工学院 | Flat active display with goniometric ballast structure and manufacturing technique thereof |
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| Publication number | Publication date |
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| TW201309087A (en) | 2013-02-16 |
| TWI475925B (en) | 2015-03-01 |
| CN102436998B (en) | 2014-06-04 |
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