CN102427058B - Method of manufacturing circuit pattern through sputtering technology and rewiring method of chip - Google Patents
Method of manufacturing circuit pattern through sputtering technology and rewiring method of chip Download PDFInfo
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- CN102427058B CN102427058B CN201110352503.1A CN201110352503A CN102427058B CN 102427058 B CN102427058 B CN 102427058B CN 201110352503 A CN201110352503 A CN 201110352503A CN 102427058 B CN102427058 B CN 102427058B
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Abstract
The invention discloses a method of manufacturing a circuit pattern through a sputtering technology and a rewiring method of a chip; the method of manufacturing the circuit pattern through the sputtering technology comprises the following steps of: arranging a jig between a component to be sputtered and a cathode of sputtering equipment, and arranging a through groove with a set shape on the jig; starting the sputtering equipment, leading atoms sputtered by the cathode to pass through the through groove and then be adhered on the surface of the component, and forming the circuit pattern. According to the technical scheme of the embodiment, the circuit pattern with the set shape can be directly manufactured by sputtering; and compared with the traditional technical scheme of firstly sputtering a whole surface and then etching the circuit pattern, the technical scheme has the advantages that an etching step is omitted, a technological process is shortened and the technology difficulty is reduced.
Description
Technical field
The present invention relates to circuit board making technical field, be specifically related to a kind of by the sputtering technology making method of line pattern and a kind of rewiring method of chip.
Background technology
Integrated circuit (Integrated Circuit, IC) chip has the trend to densification and multifunction development.Circuit on current chip the most reaches 28nm.While line density increases, input/output port (input/output, the I/O) density of chip is also in increase, and the mode of four limit array outlets conventional on chip has been difficult to meet the demands.
So there is rewiring (retry designline, the RDL) technique four limit array pad being converted into face array pad.Adopt RDL technique, chip four limit array pad can be converted into the face array pad in the middle of chip, size and the spacing of pad can be increased, to make full use of the region in the middle of chip, reduce the difficulty of encapsulation.Said four limit array pad are positioned at the edge of chip surface near its four edges.
General rewiring method comprises the following steps:
101, arrange photoresist at chip surface, comprising: at the full surface-coated photoresist of chip, by exposing and developing, make chip four limit need the original pad of RDL to expose, other position is then capped;
102, the full surface of chip is sputtered, comprising: first sputter one deck titanium, then sputter one deck copper.
103, make line pattern, comprising: chip surface after sputtering applies one deck photoresist again, then by exposure, development and etching, after forming the line pattern needed, remove the photoresist of this coating.
104, plating forms new pad, comprise: at the chip surface forming line pattern, one deck photoresist is set again, by exposing and developing, the regional making chip intermediate demand form new pad exposes, other parts are then covered by photoresist, then electroplate, form new pad in exposed area.
Wherein, need the original pad of RDL can comprise multiple, each original pad can a corresponding new pad, and original pad and corresponding new pad are connected by the line pattern of formation.
By said method, chip four limit can be realized to need the original pad of RDL to transfer in the middle of chip, but above-mentioned RDL method step is more, flow process is complicated.
Summary of the invention
The embodiment of the present invention provides a kind of and makes the method for line pattern and a kind of rewiring method of chip by sputtering technology, can shortened process, reduces technology difficulty.
Made a method for line pattern by sputtering technology, comprising:
One tool is set between components and parts to be sputtered and the negative electrode of sputtering equipment, described tool offers the groove of setting shape;
Start sputtering equipment, the atom that described cathodic sputtering is gone out, by being attached to the surface of described components and parts after described groove, forms line pattern.
A rewiring method for chip, comprising:
Arrange photoresist at chip surface, described photoresist covers the region on chip except original pad;
Adopt the arbitrary described method of claims 1 to 3 to sputter chip, form the line pattern needed;
Again arrange photoresist at chip surface, described photoresist covers the region except the new pad locations designed in advance;
Electroplate described new pad locations, form new pad, described new pad is connected with described original pad by described line pattern.
Embodiment of the present invention method adopts between components and parts to be sputtered and sputtering equipment negative electrode, arranges the technical scheme that offers the tool of setting shape groove, the line pattern of setting shape directly can be produced by sputtering, the technical scheme of the full surface sputtering of relatively existing elder generation circuit etching figure again, decrease etching step, shorten technological process, reduce technology difficulty.
Accompanying drawing explanation
Fig. 1 is the flow chart being made the method for line pattern by sputtering technology that the embodiment of the present invention provides;
Fig. 2 is the schematic diagram of the tool that the embodiment of the present invention provides;
Fig. 3 is schematic diagram when adopting embodiment of the present invention method to sputter;
Fig. 4 is the rewiring method of the chip that the embodiment of the present invention provides;
Fig. 5 a-5d is the schematic diagram of rewiring method chips in each stage of the chip that the embodiment of the present invention provides.
Embodiment
The embodiment of the present invention provides a kind of and makes the method for line pattern by sputtering technology, and the method eliminates etching step, can shortened process, reduces technology difficulty.The embodiment of the present invention also provides the rewiring method of corresponding chip.Below be described in detail respectively.
Embodiment one,
Please refer to Fig. 1, the embodiment of the present invention provides a kind of method being made line pattern by sputtering technology, comprising:
201, a tool is set between components and parts to be sputtered and the negative electrode of sputtering equipment, described tool offers the groove of setting shape.
Existing sputtering method is generally to components and parts to be sputtered, as circuit board or chip etc., carry out full surface sputtering, that is: components and parts are placed on sputtering equipment sputtering chamber in, start sputtering equipment, the unscreened all surfaces acting on components and parts of atom milli that the cathodic sputtering of sputtering equipment is gone out, forms one deck sputtering layer at all surfaces of components and parts.Follow-up, the methods such as recycling etching remove the sputtering layer not needing position, only retain the sputtering layer needing position, thus form line pattern.
In the present embodiment, in order to shorten flow process, design and produce a kind of tool.Please refer to Fig. 2, this tool 410 offers the groove 411 of setting shape.The shape of groove 411 is determined according to the line pattern preparing to be formed at component surface, and ideally, the shape of groove 411 can be made identical with the shape of line pattern, and size dimension is also identical.Like this, components and parts need the position of tool corresponding to line pattern position offer groove 411, the atom that the cathodic sputtering of sputtering equipment goes out just can pass through from these grooves 411, acts on component surface, components and parts are formed identical line pattern.
Optionally, the shape of groove 411 that tool is offered can be identical in layout with the shape of the line pattern of needs, but it is slightly different in size, namely, the shape of groove 411 is reduced according to preset ratio relative to line pattern, such as, the overall dimensions of groove 411 can be 95% of line pattern overall dimensions.
202, start sputtering equipment, the atom that described cathodic sputtering is gone out, by being attached to the surface of described components and parts after described groove, forms line pattern.
Please refer to Fig. 3, described tool 410 and components and parts 420 to be sputtered all can be placed in the sputtering chamber of sputtering equipment, and make tool 410 between components and parts 420 and the negative electrode 430 of sputtering equipment.Tool 410 and components and parts 420 can be provided with alignment pin and the location hole of pairing, or the align member of other form, so that components and parts 420 and tool 410 aim at location.
After starting sputtering equipment, the atom that the cathodic sputtering of sputtering equipment goes out acts on tool.Wherein, have the position of groove at tool, the atom sputtered can be acted on components and parts by groove.Sputter complete, the sputtering layer that components and parts are formed can form the line pattern of setting shape according to the shape of groove.
Wherein, the distance between components and parts and tool can regulate as required.Components and parts and tool such as can be made to contact with each other, fit together completely, to avoid in groove edge because of the problem causing the circuit of formation wide around plating phenomenon.Optionally, when the overall dimensions of the groove 411 that tool is offered is slightly less than line pattern overall dimensions, components and parts and tool can be made at a distance of certain distance, specifically can determine according to practical application adjustment.
To sum up, present embodiments provide a kind of method being made line pattern by sputtering technology, the method adopts between components and parts to be sputtered and sputtering equipment negative electrode, arranges the technical scheme that offers the tool of setting shape groove, the line pattern of setting shape directly can be produced by sputtering, the technical scheme of the full surface sputtering of relatively existing elder generation circuit etching figure again, decrease etching step, thus shorten technological process, reduce technology difficulty.
Embodiment two,
Please refer to Fig. 4, the embodiment of the present invention provides a kind of rewiring method of chip, comprising:
301, arrange photoresist at chip surface, described photoresist covers the region on chip except original pad.
As shown in Figure 5 a, one deck photoresist 460 can be all applied on the surface of chip 440, then, by exposure and developing process, remove the photoresist 460 chip needing original pad 450 position of RDL, these original pads 450 are exposed, and on chip 440, other position is still covered by photoresist 460.
302, adopt the method described in embodiment one to sputter chip, form the line pattern needed.
As shown in Figure 5 b, this step adopts the method being made line pattern by sputtering technology described in embodiment one, chip 440 is sputtered, by offering groove by setting shape on tool, directly obtain the line pattern 470 needed at chip 440 surface sputtering, and do not need secondary apply photoresist and carry out the step such as etching.The line pattern 470 formed comprises two Above Transmission Lines, and one end of every bar circuit can connect an original pad 450, and the other end then extends to the middle part of chip 440, and the described other end can be bigger, as the new pad locations of preparation.
303, again arrange photoresist at chip surface, described photoresist covers the region except the new pad locations designed in advance.
As shown in Figure 5 c, in order to form new pad in chip 440 middle part, again another layer photoetching glue 480 is set at chip surface in this step, then, by exposure and developing process, remove the photoresist of new pad locations on chip 440, these new pad locations are exposed, and on chip 440, other position is still covered by photoresist.
304, electroplate described new pad locations, form new pad, described new pad is connected with described original pad by described line pattern.
As fig 5d, electroplate described new pad locations, electroplate and form new pad 490 at the coating of new pad locations, each new pad 490 is connected with an original pad 450 respectively by a circuit.So far, realize chip four limit array pad to transfer in the middle of chip, be converted into face array pad.
Relative to only taking the original pad of chip surface near the edge of its four edges, the new pad transferred in the middle of chip can make full use of the space in the middle part of chip, the original pad of ratio that new pad can design is larger, spacing between new pad also can be larger, thus reduce the difficulty of encapsulation.
To sum up, embodiments provide a kind of rewiring method of chip, the method is by directly producing the line pattern of setting shape by sputtering, the technical scheme of the full surface sputtering of relatively existing elder generation circuit etching figure again, decrease etching step, thus shorten technological process, reduce technology difficulty.
What provide the embodiment of the present invention above is described in detail by the sputtering technology making method of line pattern and the rewiring method of chip, but the explanation of above embodiment just understands method of the present invention and core concept thereof for helping, and should not be construed as limitation of the present invention.Those skilled in the art are in the technical scope that the present invention discloses, and the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.
Claims (4)
1. made a method for line pattern by sputtering technology, it is characterized in that, comprising:
One tool is set between components and parts to be sputtered and the negative electrode of sputtering equipment, described tool and described components and parts are positioned by the alignment pin of pairing and location hole, described tool offers the groove of setting shape, the shape of groove is determined according to the line pattern preparing to be formed at component surface;
Start sputtering equipment, the atom that described cathodic sputtering is gone out is by being attached to the surface of described components and parts after described groove, the sputtering layer of formation forms line pattern according to the shape of described groove;
Wherein, the groove that described tool is offered is identical with the shape and size of described line pattern, and described components and parts and described tool contact with each other; Or the shape of the groove that described tool is offered is identical with the layout of the shape of described line pattern, but size reduces by preset ratio, described components and parts and described tool contact with each other or spaced certain distance.
2. a rewiring method for chip, is characterized in that, comprising:
Arrange photoresist at chip surface, described photoresist covers the region on chip except original pad;
Adopt method according to claim 1 to sputter chip, form the line pattern needed;
Again arrange photoresist at chip surface, described photoresist covers the region except the new pad locations designed in advance;
Electroplate described new pad locations, form new pad, described new pad is connected with described original pad by described line pattern.
3. method according to claim 2, is characterized in that:
Described line pattern comprises two Above Transmission Lines, and one end of every bar circuit connects an original pad, and the other end then connects a new pad.
4. method according to claim 2, is characterized in that:
The area of described new pad is greater than the area of described original pad, and the spacing between described new pad is greater than the spacing between original pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110352503.1A CN102427058B (en) | 2011-11-09 | 2011-11-09 | Method of manufacturing circuit pattern through sputtering technology and rewiring method of chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110352503.1A CN102427058B (en) | 2011-11-09 | 2011-11-09 | Method of manufacturing circuit pattern through sputtering technology and rewiring method of chip |
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| CN102427058A CN102427058A (en) | 2012-04-25 |
| CN102427058B true CN102427058B (en) | 2015-07-22 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1521818A (en) * | 2003-01-30 | 2004-08-18 | 矽品精密工业股份有限公司 | Semiconductor chip package and process of operation |
| CN1630457A (en) * | 2003-12-15 | 2005-06-22 | 宸鸿光电科技股份有限公司 | Method for arranging electric control circuit on touch control panel by using metal filming technique |
| CN101812669A (en) * | 2010-05-10 | 2010-08-25 | 赫得纳米科技(昆山)有限公司 | Product positioning and sputtering jig |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI268813B (en) * | 2002-04-24 | 2006-12-21 | Sipix Imaging Inc | Process for forming a patterned thin film conductive structure on a substrate |
| JP4298597B2 (en) * | 2004-07-01 | 2009-07-22 | 日東電工株式会社 | Wiring circuit board and method for manufacturing wiring circuit board |
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- 2011-11-09 CN CN201110352503.1A patent/CN102427058B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1521818A (en) * | 2003-01-30 | 2004-08-18 | 矽品精密工业股份有限公司 | Semiconductor chip package and process of operation |
| CN1630457A (en) * | 2003-12-15 | 2005-06-22 | 宸鸿光电科技股份有限公司 | Method for arranging electric control circuit on touch control panel by using metal filming technique |
| CN101812669A (en) * | 2010-05-10 | 2010-08-25 | 赫得纳米科技(昆山)有限公司 | Product positioning and sputtering jig |
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| CN102427058A (en) | 2012-04-25 |
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Address after: 518053 Nanshan District, Guangdong, overseas Chinese town, No. East Road, No. 99 Patentee after: SHENZHEN SHENNAN CIRCUIT CO., LTD. Address before: 518000 Nanshan District, Guangdong, overseas Chinese town, No. East Road, No. 99 Patentee before: Shenzhen Shennan Circuits Co., Ltd. |
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