CN102426306B - Ultrafast electronic device test system and method thereof - Google Patents
Ultrafast electronic device test system and method thereof Download PDFInfo
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- CN102426306B CN102426306B CN 201110269306 CN201110269306A CN102426306B CN 102426306 B CN102426306 B CN 102426306B CN 201110269306 CN201110269306 CN 201110269306 CN 201110269306 A CN201110269306 A CN 201110269306A CN 102426306 B CN102426306 B CN 102426306B
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Abstract
The invention discloses an ultrafast electronic device test system and a method thereof. The system comprises a femtosecond pulse laser, a femtosecond pulse delayed time system, an electric pulse generation module, an electric pulse detection module and a data collection correction system. According to the method, an optical delayed time system is utilized to divide a light beam into two beams of femtosecond pulse lights with certain time delay. One beam of laser is gathered on a high-speed photodiode and a short electric pulse generated by a photoelectric effect of the photodiode is utilized to carry out current input or electric field input on a high-speed electronic device; and another beam of the femtosecond pulse light is focused on a minielectro-optic crystal that is connected to an output circuit of the ultrafast electronic device as well as a photoelectric detector is utilized to carry out testing on pulse light intensity that is reflected or transmitted from the minielectro-optic crystal; and time delay of the two beams of lights is changed, so that timing sequence measurement is carried out on the ultrafast electronic device. According to the invention, a testing problem of a timing sequence response of an ultrafast electronic device can be effectively solved.
Description
Technical field
The present invention be more particularly directed to a kind of ultrafast electron device testing system and method, be used for measuring response time and the bandwidth that the response time reaches the above high-speed electronic components of GHz, belong to the microelectronics field of measuring technique.
Background technology
The common method of test electronic device response time is the bandwidth of test electronic device at present, namely pass through the sinusoidal signal to a series of frequencies of the amplitudes such as electron device input, measure again the amplitude of electron device output sinusoidal signal, when the amplitude of output signal was reduced to 0.7 times of low frequency along with the raising of incoming frequency, this frequency was the bandwidth of electron device.Yet the measuring method of aforementioned response time all need adopt the equipment more faster than response device to realize, after the response time of electron device reaches more than GHz, just be difficult to search out its bandwidth and the equipment of response time be fit to measured, this is a technical barrier needing to be resolved hurrily of industry just also.
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Summary of the invention
The object of the invention is to for deficiency of the prior art, a kind of ultrafast electron device testing system and method is provided, to realize the synchro measure to ultrafast electron device response time and response frequency bandwidth.
For achieving the above object, the present invention has adopted following technical scheme:
a kind of ultrafast electron device response test method, it is characterized in that: a branch of femtosecond optics short pulse that utilizes the femtosecond pulse delayed time system that femtosecond pulse laser is produced is divided into the two bundle femtosecond pulse light that the time-delay set is arranged, and wherein a branch of femtosecond pulse light is gathered on the electric pulse generation module, convert short electric pulse to by this electric pulse generation module tested ultrafast electron device is carried out the input of electric current or electric field, simultaneously another bundle femtosecond pulse light is focused on the electro-optic crystal in an electric pulse detecting module, described electro-optic crystal is connected with the output circuit of tested ultrafast electron device, recycling the pulse light intensity that the photodetector in described electric pulse detecting module detects reflection or transmission from described electro-optic crystal detects, by changing the time-delay of this two bundles femtosecond pulse light, the time-ordered measurement of realization to ultrafast electron device.
A kind of ultrafast electron device response test system is characterized in that, it comprises:
Be used for providing the femtosecond pulse laser of femtosecond optics short pulse;
Be used for femtosecond optics short pulse is carried out the femtosecond pulse delayed time system of light splitting and delay process;
For the electric current that provides generation time to control or the electric pulse generation module of electric field signal, described electric current or electric field signal are loaded into the input end of tested ultrafast electron device with the test electric pulse;
Be used for monitoring the electric pulse detecting module of tested ultrafast electron device output signal;
And, for the output signal that gathers the electric pulse detecting module, the data acquisition corrective system that the background rejection during solution is measured and temporal frequency are changed mutually.
Further say, described femtosecond pulse delayed time system comprises:
The a branch of femtosecond optics short pulse that is used for inputting is divided into the spectroscope of two bundle femtosecond pulse light;
And the delay line of built-in reflective mirror, change the optical path difference of pulse by the locus of adjusting described catoptron, and then realize the time-delay of two bundle femtosecond pulse light.
Described electric pulse generation module comprises fiber coupling system, no color differnece optical fiber, ultrafast photoelectric commutator, ultrafast photoelectric commutator is carried out controller and the condenser mirror of position operation;
Described condenser mirror focuses on fiber coupling system with femtosecond pulse light, then fiber coupling system is optically coupled into no color differnece optical fiber with femtosecond pulse, pulsed light in no color differnece optical fiber excites the ultrafast photoelectric commutator that is attached on the no color differnece optical fiber head to send electric signal, and aforementioned controller is used for ultrafast photoelectric commutator is positioned over the input end of tested ultrafast electron device.
Described ultrafast photoelectric commutator is selected from switching time less than ultrafast photoelectric diode, photoconduction antenna, TeZn crystal, the LiNbO of 30 ps
3Crystal, LiTaO
3More than any one in crystal, ZnTe crystal, InP crystal and AsGa crystal.
Described electric pulse detecting module comprises spectroscope, fiber coupling system, no color differnece optical fiber, be coupling in electro-optic crystal, polarization spectroscope, the first photodetector, the second photodetector on the no color differnece optical fiber head, electro-optic crystal is carried out controller and the condenser mirror of position operation;
After described condenser mirror focuses on fiber coupling system with femtosecond pulse light, by fiber coupling system, pulsed light is coupled into no color differnece optical fiber, be reflected into no color differnece optical fiber by described electro-optic crystal again, and from the fiber coupling system outgoing, by spectroscope be reflected into light that polarization spectroscope form two bundle cross polarizations, then by the first photodetector and the second photodetector, the light intensity variation of the light of this two bundles cross polarization measured respectively thereafter;
Described controller is used for described electro-optic crystal is positioned over the output terminal of tested ultrafast electron device.
More than described electro-optic crystal is selected from any one in ZnTe crystal, InP crystal and AsGa crystal.
adopt femtosecond pulse laser to produce femtosecond optics short pulse in the present invention, and input femtosecond pulse delayed time system, be divided into two bundles by the spectroscope in this femtosecond pulse delayed time system, the optical path difference of this two-beam can be controlled by the reflective mirror right locus of regulating in delay line, thereby realize the time-delay of two bundle femtosecond pulse light, wherein a branch of pulsed light enters the electric pulse generation module, during condenser focuses on fiber coupling system with pulsed light in this electric pulse generation module, then with fiber coupling system, pulsed light is coupled in optical fiber, laser pulse excites the ultrafast photoelectric commutator that is attached on optical fiber head to send electric signal, in the tested electron device of this electric signal input, the output signal of tested electron device changes the moment refractive index ratio of electro-optic crystal, thereby change the polarised direction of the pulsed light of incident, another beam pulse light is inputted in the electric pulse detecting module, by condenser, this beam pulse light is focused on fiber coupling system, be coupled into again in no color differnece optical fiber, thereafter by reflecting in electro-optic crystal, enter spectroscope by fiber coupling system again, then enter polarization spectroscope, be divided into the two-beam of different polarization, light intensity by measuring this two-beam relatively strong and weak just can calculate laser pulse arrival and be the electric field intensity on electro-optic crystal.So, by changing the time delay of aforementioned two bundle femtosecond pulse light, just can obtain the timing variations of the electric field on electro-optic crystal.
By analyzing the difference of two kinds of bar timing curves when tested electron device being arranged and there is no tested electron device, just can obtain the time of ultrafast electron device and the character of frequency response.
The present invention has realized the synchronous evaluation and test to the time of ultrafast electron device and frequency response character, and has overcome the defective of temporal resolution deficiency in existing electronics measurement.
Description of drawings:
Fig. 1 is the structural representation of ultrafast electron device response test system in a preferred embodiment of the present invention;
in figure, the implication of each mark is: the 100-femtosecond pulse laser, the 201-spectroscope, the 202-delay line, 301-fiber coupling system optical fiber, 302-no color differnece optical fiber, the ultrafast photoelectric commutator of 303-, the ultrafast photoelectric commutator of 304-carries out the controller of position operation, 305-light condenser mirror, the 401-spectroscope, the 402-fiber coupling system, 403-no color differnece optical fiber, 404-is coupling in the electro-optic crystal on optical fiber head, the 405-polarization spectroscope, 406-photodetector 1, 407-photodetector 2, the 408-photoelectric commutator carries out the controller of position operation, the 409-condenser mirror, 500-data acquisition corrective system.
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Embodiment
Below in conjunction with accompanying drawing and a preferred embodiment, technical scheme of the present invention is further described.
Consult Fig. 1, system of this ultrafast electron device response test system adopts modular design, and it comprises femtosecond pulse laser 100, femtosecond pulse delayed time system, electric pulse generation module, electric pulse detecting module and data acquisition corrective system 500.
Wherein, femtosecond pulse laser is used for providing femtosecond optics short pulse;
The femtosecond pulse delayed time system is used for providing the signal generation of measuring system and the time delay of surveying to change, and it comprises 201-spectroscope, delay line 202;
The electric pulse generation module is for the test electric pulse that provides a generation time to control;
The electric pulse detecting module can be surveyed the electric signal of within very short time (several femtoseconds are to psec);
Data acquisition corrective system 500 is used for gathering the output signal of photodetector, solves the background rejection in measuring, the mutual conversion of temporal frequency.
Further say,
Aforementioned femtosecond pulse delayed time system comprises:
The a branch of femtosecond optics short pulse that is used for inputting is divided into the spectroscope 201 of two bundle femtosecond pulse light;
And the right delay line 202 of built-in reflective mirror, can change the optical path difference of pulse by adjusting described catoptron right locus, and then realize the time-delay of two bundle femtosecond pulse light.
Aforementioned electric pulse generation module comprises fiber coupling system 301, no color differnece optical fiber 302, ultrafast photoelectric commutator 303, ultrafast photoelectric commutator is carried out controller 304 and the condenser mirror 305 of position operation;
Aforementioned ultrafast photoelectric commutator is selected from switching time less than ultrafast photoelectric diode, photoconduction antenna, TeZn crystal, the LiNbO of 30 ps
3Crystal, LiTaO
3More than any one in crystal, ZnTe crystal, InP crystal and AsGa crystal.
Aforementioned electric pulse detection module comprises spectroscope 401, fiber coupling system 402, no color differnece optical fiber 403, be coupling in electro-optic crystal 404, polarization spectroscope 405, the first photodetector 406, the second photodetector 407 on the no color differnece optical fiber head, electro-optic crystal 404 is carried out controller 408 and the condenser mirror 409 of position operation;
After condenser mirror 409 focuses on fiber coupling system 402 with femtosecond pulse light, by fiber coupling system 402, pulsed light is coupled into no color differnece optical fiber 403, be reflected into no color differnece optical fiber 403 by described electro-optic crystal 404 again, and from fiber coupling system 402 outgoing, by spectroscope 401 be reflected into light that polarization spectroscope 405 form two bundle cross polarizations, then changed by the first photodetector 406 and 407 pairs of these two light intensity of restrainting the light of cross polarizations of the second photodetector respectively and measure thereafter;
Described controller 408 is used for described electro-optic crystal 404 is positioned over the output terminal of tested ultrafast electron device.
More than the aforementioned electric luminescent crystal is selected from any one in ZnTe crystal, InP crystal and AsGa crystal.
in the present embodiment, after the femtosecond optics short pulse that is produced by femtosecond pulse laser is transfused to the femtosecond pulse delayed time system, be divided into two bundles by spectroscope 201, the optical path difference of this two-beam can be controlled by the reflective mirror right locus of regulating in delay line 202, realize the time-delay of two bundle femtosecond pulse light, wherein a branch of pulsed light enters the electric pulse generation module, in this module, condenser 305 focuses on pulsed light in fiber coupling system 301, then with fiber coupling system, pulsed light is coupled in no color differnece optical fiber 302, laser pulse excites the ultrafast photoelectric commutator 303 that is attached on optical fiber head to send electric signal, in the tested electron device of this electric signal input, the output signal of electron device changes the moment refractive index ratio of electro-optic crystal 404, thereby change the polarised direction of the pulsed light of incident.In the electric pulse detecting module, by condenser 409, femtosecond laser beam is focused on fiber coupling system 402, the femto-second laser pulse that is coupled into no color differnece optical fiber 403 reflects in electro-optic crystal 404, by fiber coupling system by entering polarization spectroscope 405 by spectroscope 401, and be divided into two bundles of different polarization in polarization spectroscope, measure respectively light intensity relative strong and weak of this two-beam by two photodetectors 406 and photodetection 407, can calculate that laser pulse arrives is electric field intensity on electro-optic crystal.
By changing the time delay of aforementioned two bundle femtosecond pulse light, just can obtain the timing variations of the electric field on electro-optic crystal.
Need to prove, in the test macro of the present embodiment, when there is no measured device, electric field change may have certain prolongation and change, but the timing variations curve when can there is no measured device by measurement is corrected measurement result.
Measured device is arranged and without the difference of the timing curve in two kinds of situations of measured device, just can obtain the time of tested ultrafast electron device and the character of frequency response by analysis.
The present invention can realize the synchronous evaluation and test to the time of ultrafast electron device and frequency response character, and can overcome the defective of temporal resolution deficiency in existing electronics measurement.
Above-mentioned preferred embodiment only is explanation technical conceive of the present invention and characteristics; its purpose is to allow the understanding of being familiar with technique can understand content of the present invention and implement according to this; can not limit protection scope of the present invention with this; all equivalences that Spirit Essence is done according to the present invention change or modify, within all should being encompassed in protection scope of the present invention.
Claims (10)
1. ultrafast electron device response test method, it is characterized in that: a branch of femtosecond optics short pulse that utilizes the femtosecond pulse delayed time system that femtosecond pulse laser is produced is divided into the two bundle femtosecond pulse light that the time-delay set is arranged, and wherein a branch of femtosecond pulse light is gathered on the electric pulse generation module, convert short electric pulse to by this electric pulse generation module tested ultrafast electron device is carried out the input of electric current or electric field, simultaneously another bundle femtosecond pulse light is focused on the electro-optic crystal in an electric pulse detecting module, described electro-optic crystal is connected with the output circuit of tested ultrafast electron device, recycling the pulse light intensity that the photodetector in described electric pulse detecting module detects reflection or transmission from described electro-optic crystal detects, by changing the time-delay of this two bundles femtosecond pulse light, the time-ordered measurement of realization to ultrafast electron device.
2. ultrafast electron device response test method according to claim 1, it is characterized in that: described femtosecond pulse delayed time system comprises:
The a branch of femtosecond optics short pulse that is used for inputting is divided into the spectroscope (201) of two bundle femtosecond pulse light;
And the right delay line (202) of built-in reflective mirror, change the optical path difference of pulse by adjusting described catoptron right locus, and then realize the time-delay of two bundle femtosecond pulse light.
3. ultrafast electron device response test method according to claim 1, it is characterized in that: described electric pulse generation module comprises fiber coupling system (301), no color differnece optical fiber (302), ultrafast photoelectric commutator (303), ultrafast photoelectric commutator is carried out controller (304) and the condenser mirror (305) of position operation;
Described condenser mirror (305) focuses on fiber coupling system (301) with femtosecond pulse light, then fiber coupling system (301) is optically coupled into no color differnece optical fiber (302) with femtosecond pulse, pulsed light in no color differnece optical fiber (302) excites the ultrafast photoelectric commutator (303) that is attached on the no color differnece optical fiber head to send electric signal, and described controller (304) is used for ultrafast photoelectric commutator (303) is positioned over the input end of tested ultrafast electron device;
Described ultrafast photoelectric commutator is selected from switching time less than ultrafast photoelectric diode, photoconduction antenna, TeZn crystal, the LiNbO of 30 ps
3Crystal, LiTaO
3More than any one in crystal, ZnTe crystal, InP crystal and AsGa crystal.
4. ultrafast electron device response test method according to claim 1 is characterized in that: described electric pulse detecting module comprises spectroscope (401), fiber coupling system (402), no color differnece optical fiber (403), be coupling in electro-optic crystal (404), polarization spectroscope (405), the first photodetector (406), the second photodetector (407) on the no color differnece optical fiber head, electro-optic crystal (404) is carried out controller (408) and the condenser mirror (409) of position operation;
after described condenser mirror (409) focuses on fiber coupling system (402) with femtosecond pulse light, by fiber coupling system (402), pulsed light is coupled into no color differnece optical fiber (403), be reflected into no color differnece optical fiber (403) by described electro-optic crystal (404) again, and from fiber coupling system (402) outgoing, by spectroscope (401) be reflected into light that polarization spectroscope (405) form two bundle cross polarizations thereafter, then respectively by the first photodetector (406), with the second photodetector (407), the light intensity variation of the light of this two bundles cross polarization is measured,
Described controller (408) is used for described electro-optic crystal (404) is positioned over the output terminal of tested ultrafast electron device;
More than described electro-optic crystal is selected from any one in ZnTe crystal, InP crystal and AsGa crystal.
5. a ultrafast electron device response test system, is characterized in that, it comprises:
Be used for providing the femtosecond pulse laser of femtosecond optics short pulse;
Be used for femtosecond optics short pulse is carried out the femtosecond pulse delayed time system of light splitting and delay process;
For the electric current that provides generation time to control or the electric pulse generation module of electric field signal, described electric current or electric field signal are loaded into the input end of tested ultrafast electron device with the test electric pulse;
Be used for monitoring the electric pulse detecting module of tested ultrafast electron device output signal;
And, for the output signal that gathers the electric pulse detecting module, the data acquisition corrective system that the background rejection during solution is measured and temporal frequency are changed mutually.
6. ultrafast electron device response test according to claim 5 system, it is characterized in that: described femtosecond pulse delayed time system comprises:
The a branch of femtosecond optics short pulse that is used for inputting is divided into the spectroscope (201) of two bundle femtosecond pulse light;
And the delay line of built-in reflective mirror (202), change the optical path difference of pulse by the locus of adjusting described catoptron, and then realize the time-delay of two bundle femtosecond pulse light.
7. ultrafast electron device response test according to claim 5 system, it is characterized in that: described electric pulse generation module comprises fiber coupling system (301), no color differnece optical fiber (302), ultrafast photoelectric commutator (303), ultrafast photoelectric commutator is carried out controller (304) and the condenser mirror (305) of position operation;
Described condenser mirror (305) focuses on fiber coupling system (301) with femtosecond pulse light, then fiber coupling system (301) is optically coupled into no color differnece optical fiber (302) with femtosecond pulse, pulsed light in no color differnece optical fiber (302) excites the ultrafast photoelectric commutator (303) that is attached on the no color differnece optical fiber head to send electric signal, and described controller (304) is used for ultrafast photoelectric commutator (303) is positioned over the input end of tested ultrafast electron device.
8. ultrafast electron device response test according to claim 7 system, it is characterized in that: described ultrafast photoelectric commutator is selected from switching time less than ultrafast photoelectric diode, photoconduction antenna, TeZn crystal, the LiNbO of 30 ps
3Crystal, LiTaO
3More than any one in crystal, ZnTe crystal, InP crystal and AsGa crystal.
9. ultrafast electron device response test according to claim 5 system is characterized in that: described electric pulse detecting module comprises spectroscope (401), fiber coupling system (402), no color differnece optical fiber (403), be coupling in electro-optic crystal (404), polarization spectroscope (405), the first photodetector (406), the second photodetector (407) on the no color differnece optical fiber head, electro-optic crystal (404) is carried out controller (408) and the condenser mirror (409) of position operation;
after described condenser mirror (409) focuses on fiber coupling system (402) with femtosecond pulse light, by fiber coupling system (402), pulsed light is coupled into no color differnece optical fiber (403), be reflected into no color differnece optical fiber (403) by described electro-optic crystal (404) again, and from fiber coupling system (402) outgoing, by spectroscope (401) be reflected into light that polarization spectroscope (405) form two bundle cross polarizations thereafter, then respectively by the first photodetector (406), with the second photodetector (407), the light intensity variation of the light of this two bundles cross polarization is measured,
Described controller (408) is used for described electro-optic crystal (404) is positioned over the output terminal of tested ultrafast electron device.
10. ultrafast electron device response test according to claim 9 system is characterized in that: more than described electro-optic crystal is selected from any one in ZnTe crystal, InP crystal and AsGa crystal.
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| CN 201110269306 CN102426306B (en) | 2011-09-13 | 2011-09-13 | Ultrafast electronic device test system and method thereof |
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| CN102426306B true CN102426306B (en) | 2013-06-26 |
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| CN106353634A (en) * | 2016-10-17 | 2017-01-25 | 深圳市太赫兹科技创新研究院 | Terahertz time-domain reflecting system |
| CN112858805B (en) * | 2020-12-29 | 2023-02-28 | 西南技术物理研究所 | Frequency response characteristic parameter measuring device for quadrant photoelectric detector |
| CN113203761B (en) * | 2021-04-21 | 2022-04-01 | 华中科技大学 | Time resolution sample inspection device with multiple working modes |
| CN114459621A (en) * | 2022-02-10 | 2022-05-10 | 中国空间技术研究院 | Superconducting X-ray detector time jitter calibration system and method |
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| US4931704A (en) * | 1988-12-09 | 1990-06-05 | Alfano Robert R | Ultrafast sampling oscilloscope |
| JPH05126866A (en) * | 1991-11-05 | 1993-05-21 | Nippon Steel Corp | Method and apparatus for measuring ultrahigh-speed electric signal |
| US5778016A (en) * | 1994-04-01 | 1998-07-07 | Imra America, Inc. | Scanning temporal ultrafast delay methods and apparatuses therefor |
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