CN106353634A - Terahertz time-domain reflecting system - Google Patents
Terahertz time-domain reflecting system Download PDFInfo
- Publication number
- CN106353634A CN106353634A CN201610903169.7A CN201610903169A CN106353634A CN 106353634 A CN106353634 A CN 106353634A CN 201610903169 A CN201610903169 A CN 201610903169A CN 106353634 A CN106353634 A CN 106353634A
- Authority
- CN
- China
- Prior art keywords
- domain
- electric pulse
- terahertz time
- signal
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2832—Specific tests of electronic circuits not provided for elsewhere
- G01R31/2836—Fault-finding or characterising
- G01R31/2839—Fault-finding or characterising using signal generators, power supplies or circuit analysers
- G01R31/2841—Signal generators
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2853—Electrical testing of internal connections or -isolation, e.g. latch-up or chip-to-lead connections
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2896—Testing of IC packages; Test features related to IC packages
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/08—Locating faults in cables, transmission lines, or networks
- G01R31/11—Locating faults in cables, transmission lines, or networks using pulse reflection methods
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
- G01R31/66—Testing of connections, e.g. of plugs or non-disconnectable joints
- G01R31/70—Testing of connections between components and printed circuit boards
Abstract
The invention relates to a terahertz time-domain reflecting system. The terahertz time-domain reflecting system is used for detecting faults of a semiconductor integrated circuit, and comprises a pulse laser, a beam splitting device, an optical delay line device and an electrical pulse receiving-transmitting device. Ultra-short pulse laser excites the electrical pulse receiving-transmitting device to generate and receive high-frequency electrical pulse signals, the frequency of the high-frequency electrical pulse signals reaches an order of pico-second, and the high-frequency electrical pulse signals are current signals. The generated high-frequency electrical pulse signals are sent into a to-be-tested chip to perform fault detection. By virtue of the terahertz time-domain reflecting system, changes of terahertz time-domain reflection signals in a certain time delay of a to-be-tested chip can be quickly obtained, namely that information of a distance of transmission along a leading wire of the high-frequency electrical pulse signals in the to-be-tested chip can be obtained, communication faults in the to-be-tested chip can be located and determined by virtue of the changes of the terahertz time-domain reflection signals, and the impedance of the leading wire in the to-be-tested chip can be measured.
Description
Technical field
The present invention relates to Terahertz Technology field, more particularly to terahertz time-domain reflex system.
Background technology
In the manufacturing of semiconductor integrated circuit, for ensureing the functional completeness of chip that dispatches from the factory, need to be in advance of dispatching from the factory
Row function and the test of performance.Chip relies primarily on large-scale production, is equally also required to large-scale Aulomatizeted Detect.In recent years
Come, due to the renewal of technology, popular, the miniaturization of package dimension of portable set, the complexity of testing semiconductor piece adds
Greatly, testing process needs to be customized for different encapsulation, and therefore, the accident analysis of extensive automatization faces more and more
Challenge.
Accident analysis for semiconductor integrated circuit includes: in encapsulation and assembling stage using scanning acoustics micro-imaging
Technology carries out crack and the lossless detection of layering；Carry out the inspection of outer enclosure damage using x- light micro-imaging technique；Use
Electric time-domain reflectomer carries out detection of circuit communication performance etc..Wherein, after the break-make of circuit, short circuit, misconnection are common fault
Really.In the encapsulated phase of semiconductor integrated circuit, electric pulse can be sent into transmission line and read its return by electric time-domain reflectomer
Pulse, thus realizing judgement and the positioning of fault, but electric time-domain reflectomer can achieve highest millimeter class resolution ratio at present, uncomfortable
Accident analysis for micron level is it is impossible to carry out fault detect to the chip package of increasingly small complex.
Content of the invention
Based on this it is necessary to be directed to the problems referred to above, provide one kind can carry out high-accuracy, height to semiconductor integrated circuit
The terahertz time-domain reflex system of sensitivity accident analysis.
A kind of terahertz time-domain reflex system, for detecting to quasiconductor Fault of Integrated Circuits, comprising:
Pulse laser, for emission pulse laser；
Beam splitting arrangement, for being pump light and exciting light by described pulse laser beam splitting；
Optical delay line device, is arranged on the direction that described exciting light is propagated, for adjusting described pump light and described
The time delayses of exciting light；
Electric pulse R-T unit, described electric pulse R-T unit is connected with chip to be measured, and described pump light and exciting light are equal
Focus on described electric pulse R-T unit, described electric pulse R-T unit is used for producing high frequency electric pulse signal and sends to described
Chip to be measured, and receive the high frequency electric pulse signal formation terahertz time-domain reflected signal reflecting from described chip to be measured, and
Analyze the fault message of described chip to be measured.
Wherein in an embodiment, described electric pulse R-T unit includes:
First photoconductive antenna, described pump light focuses on described first photoconductive antenna, for producing high-frequency electrical arteries and veins
Rush signal and be delivered to described chip to be measured；
Second photoconductive antenna, described exciting light focuses on described second photoconductive antenna, for receiving from described
The high frequency electric pulse signal of chip reflection to be measured；
Probe, is connected with described first photoconductive antenna, the second photoconductive antenna, chip to be measured respectively；
Signal analysis module, is connected with described second photoconductive antenna, for carrying out to the high frequency electric pulse signal reflecting
Acquisition process, forms described terahertz time-domain reflected signal and analyzes the fault message of described chip to be measured.
Wherein in an embodiment, described signal analysis module includes signal acquisition module and signal processing module, institute
State the second photoconductive antenna, signal acquisition module, signal processing module are sequentially connected electrically；
Described signal acquisition module is used for being acquired processing and amplifying to the high frequency electric pulse signal of reflection；
Described signal processing module is used for the event forming described terahertz time-domain reflected signal and analyzing described chip to be measured
Barrier information.
Wherein in an embodiment, described electric pulse R-T unit also includes direct current biasing module, described direct current biasing
Module is connected with described first photoconductive antenna, for providing DC offset voltage for described first photoconductive antenna.
Wherein in an embodiment, described electric pulse R-T unit also includes Current amplifier module, described Current amplifier
Module is connected with described first photoconductive antenna, is amplified processing for described high frequency electric pulse signal.
Wherein in an embodiment, described electric pulse R-T unit also includes frequency correction module, described frequency correction
Module is connected with described first photoconductive antenna, for high frequency electric pulse signal shown in monitoring and correction.
Wherein in an embodiment, described electric pulse R-T unit also includes transmission line, and one end of described transmission line is divided
It is not connected with described first photoconductive antenna, the second photoconductive antenna, the other end of described transmission line is connected with described probe.
Wherein in an embodiment, also include optical fiber, described optical fiber is sequentially connected described pulse laser, beam splitting dress
Put, optical delay line device, for transmitting described pulse laser.
Wherein in an embodiment, described beam splitting arrangement be fiber coupler, the input of described fiber coupler with
Described optical fiber connects, and the first outfan of described fiber coupler is used for exporting described pump light, and the of described fiber coupler
Two outfans are used for exporting described exciting light.
Wherein in an embodiment, described beam splitting arrangement is beam splitter.
When above-mentioned terahertz time-domain reflex system can quickly obtain Terahertz in certain time postpones for the chip to be measured
The change of domain reflected signal, namely the letter of the distance that high frequency electric pulse signal is propagated in chip to be measured can be obtained along lead
Breath.Because the failure of connectivitys such as the lead open circuit of chip to be measured, short circuit can cause the different changes of impedance, when then making Terahertz
Domain reflected signal change.When for example opening a way in lead, terahertz time-domain reflected signal can assume normal reflection peak in corresponding distance,
Its peak value is relevant with impedance, therefore can pass through the change of terahertz time-domain reflected signal, failure of connectivity in chip to be measured is entered
Row positioning and judgement are it is also possible to the impedance to lead in chip to be measured measures.Because terahertz time-domain reflex system uses
Ultrafast laser excites high frequency electric pulse signal, and this high frequency electric pulse signal elevating time is extremely short, compare electric time-domain reflectomer up to
To the accuracy of detection of micron level, greatly improve the signal to noise ratio of detection, provide high-accuracy, highly sensitive for complicated encapsulation
Accident analysis.
Brief description
Fig. 1 is the index path of terahertz time-domain reflex system in an embodiment；
Fig. 2 is the structural framing figure of electric pulse R-T unit in terahertz time-domain reflex system in an embodiment.
Reference: pulse laser 10, beam splitting arrangement 20, optical fiber 30, the photoconductive sky of optical delay line device 40, first
Line 51, the second photoconductive antenna 52, signal analysis module 53, direct current biasing module 54, transmission line 55, probe 56, chip to be measured
60.
Specific embodiment
For the ease of understanding the present invention, below with reference to relevant drawings, invention is described more fully.Give in accompanying drawing
Go out the preferred embodiment of invention.But, the present invention can realize however it is not limited to described herein in many different forms
Embodiment.On the contrary, providing the purpose of these embodiments to be to make the understanding to the disclosure more thoroughly comprehensive.
Unless otherwise defined, all of technology used herein and scientific terminology and the technical field belonging to the present invention
The implication that technical staff is generally understood that is identical.Term used in the description in invention is intended merely to description specifically herein
Embodiment purpose it is not intended that limit the present invention.Term as used herein "and/or" includes one or more correlations
The arbitrary and all of combination of Listed Items.
Terahertz emission refers to electromagnetic radiation between 0.1thz to 10thz for the frequency, and terahertz time-domain reflex system is tied
Closing light electrical effect and the high-resolution fault detect of time domain reflection technology achievable psec (ps) magnitude gitter, wherein, when
Between to rock be exactly time jitter, represent the signal period of pulse signal and the little deviation of ideal period, table to a certain extent
Show the saltus step degree of pulse.
Fig. 1 is the index path of terahertz time-domain reflex system in an embodiment, and Fig. 2 is that in an embodiment, terahertz time-domain is anti-
Penetrate the structural framing figure of electric pulse R-T unit in system.Terahertz time-domain reflex system is used for quasiconductor Fault of Integrated Circuits
Detected, including pulse laser 10, beam splitting arrangement 20, optical delay line device 40 and electric pulse R-T unit 50.Arteries and veins
The ultra-short pulse laser rushing laser instrument 10 transmitting carries out the beam splitting of pulse laser by beam splitting arrangement 20.One bundle of pulsed laser is direct
Form pump light, another bundle forms exciting light via after optical delay line device 40, and wherein, optical delay line device 40 is used for increasing
Plus the time delay of pump light and exciting light.Ultra-short pulse laser excites electric pulse R-T unit 50 to produce and receives high-frequency electrical arteries and veins
Rushing signal, frequency psec (ps) magnitude of high frequency electric pulse signal, and this high frequency electric pulse signal is current signal, and its electric current is believed
Number intensity be na (na) rank.The high frequency electric pulse signal producing is admitted to chip 60 to be measured and carries out fault detect.
By above-mentioned terahertz time-domain reflex system, can quickly obtain chip 60 to be measured certain time postpone in too
The change of hertz otdr signal, namely can obtain high frequency electric pulse signal in chip 60 to be measured along lead propagate away from
From information.Because the failure of connectivitys such as the lead open circuit of chip 60 to be measured, short circuit can cause the different changes of impedance, then make
Terahertz time-domain reflected signal changes.When for example opening a way in lead, terahertz time-domain reflected signal can present in corresponding distance
Normal reflection peak, its peak value is relevant with impedance, therefore can pass through the change of terahertz time-domain reflected signal, connect in chip 60 to be measured
Connectivity fault is positioned and is judged it is also possible to the impedance to lead in chip 60 to be measured measures.
Pulse laser 10 is femtosecond pulse laser 10, and for the ultra-short pulse laser of transmitting, wherein ultrashort pulse swashs
Light is the pulsed light less than 1 psec (ps).
Terahertz time-domain reflex system also includes optical fiber 30, and described optical fiber 30 is sequentially connected described pulse laser 10, divides
Bundle device 20, optical delay line device 40, for transmitting described pulse laser.Pulse laser 10 and beam splitting arrangement 20, beam splitting
It is all that optical fiber 30 transmits between device 20 and optical delay line device 40, ultra-short pulse laser is exported by optical fiber 30, permissible
Efficiency of transmission is provided, reduces energy loss, improve the stability of whole system simultaneously.
Beam splitting arrangement 20 is fiber coupler 20, and the input of described fiber coupler 20 is connected with described optical fiber 30, institute
The first outfan stating fiber coupler 20 connects optical fiber 30 and is used for exporting described pump light, and the second of described fiber coupler 20
Outfan connects optical fiber 30 and is used for exporting described exciting light.
In one embodiment, if the ultra-short pulse laser from pulse laser 10 transmitting transmits in free space, its point
Bundle device 20 can also be beam splitter, by beam splitter, ultra-short pulse laser is divided into two.
Electric pulse R-T unit 50, described electric pulse R-T unit 50 is connected with chip 60 to be measured, described pump light and swash
Lighting all focuses on described electric pulse R-T unit 50, and described electric pulse R-T unit 50 is used for producing high frequency electric pulse signal
Send to described chip 60 to be measured, and receive the high frequency electric pulse signal formation Terahertz being reflected back from described chip 60 to be measured
Otdr signal, and analyze the fault message of described chip to be measured, wherein, described high frequency electric pulse signal is na level electric current
Signal.
Electric pulse R-T unit 50 include the first photoconductive antenna 51, the second photoconductive antenna 52, signal analysis module 53,
Transmission line 55 and probe 56.
The pump light of fiber coupler 20 output focuses on the first photoconductive antenna 51 (photoconductive sky of transmitting through free space
Line) go up and excite generation high frequency electric pulse signal.The exciting light of optical delay line device 40 output focuses to the through free space
Two photoconductive antennas 52 (reception photoconductive antenna).High frequency electric pulse signal sends into chip to be measured via transmission line 55, probe 56
60, transmit in chip 60 to be measured.Wherein, transmission line 55 is with Low ESR, constant low-loss high frequency high-speed transmission line 55.Probe
56 tips will be placed directly within the pin of semiconductor chip to be measured, to implement the detection of fault.Accordingly, from chip 60 to be measured
High frequency electric pulse signaling reflex signal reflexing in the second photoconductive antenna 52 through probe 56, transmission line 55, and in the second light
Switch to for exporting after the current signal in photoconduction to signal analysis module 53 in conductance antenna 52, right by signal analysis module 53
The high frequency electric pulse signal of reflection is acquired processing, and forms described terahertz time-domain reflected signal.
Signal analysis module 53 includes signal acquisition module 531 and signal processing module 532, described second photoconductive antenna
52nd, signal acquisition module 531, signal processing module 532 are sequentially connected electrically.Signal acquisition module 531 include signal amplification unit,
Lock phase amplifying unit and signal gathering unit, can be acquired processing and amplifying to the high frequency electric pulse signal of reflection.At signal
Reason module 532 signal processing unit and accident analysis unit, can analyze chip to be measured to according to terahertz time-domain reflected signal
60 fault message.
Electric pulse R-T unit 50 also includes direct current biasing module 54, direct current biasing module 54 and the first photoconductive antenna 51
Connect, for providing DC offset voltage for the first photoconductive antenna 51.
Described electric pulse R-T unit 50 also includes Current amplifier module 57, described Current amplifier module 57 and described first
Photoconductive antenna 51 connects, for carrying out to a certain degree processing and amplifying to faint high frequency electric pulse signal in transmission line 55.
Described electric pulse R-T unit 50 also includes frequency correction module 58, described frequency correction module 58 and described first
Photoconductive antenna 51 connects, and the outfan of frequency correction module 58 is electrically connected to probe 56 by transmission line 55.Frequency correction
Module 58 is used for monitoring and high frequency electric pulse signal shown in correction.In one embodiment, if to faint high frequency electric pulse signal
Frequency correction is more difficult, and frequency correction module 58 is between Current amplifier module 57 and transmission line 55.
Further, under the irradiation of pump light, the first photoconductive antenna 51 substrate may result from by the electronics-sky of movement
Cave pair, and in the presence of direct current biasing module 54 formed very little electric current, now the first photoconductive antenna 51 have high resistant and
The characteristic of low on-state rate.Because pump light is ultra-short pulse laser composition, in the presence of ultra-short pulse laser, the first photoconduction
Antenna 51 produces the carrier repeatedly moving and vertiginous electric current so that electrical conductivity greatly increases, thus forming psec amount
The high frequency electric pulse signal of level.
High frequency electric pulse signal sends to chip 60 to be measured, high frequency electric pulse signal in connected trouble point, by shape
Become picosecond magnitude reflection-type high frequency electric pulse signal, enter the second photoconductive antenna 52 through probe 56, transmission line 55, in the second light
Form the instantaneous electric potential difference of high frequency in conductance antenna 52.Under the irradiation of exciting light, the second photoconductive antenna 52 substrate also can produce
The electron-hole pair moving freely, in the presence of the ultrashort pulse of the instantaneous electric potential difference of high frequency and exciting light, the second photoconductive sky
Line 52 instantaneously turns on, and produces instantaneous photoelectric current, and exports to signal analysis module 53, forms instantaneous terahertz time-domain reflection letter
Number.
The terahertz time-domain reflection letter of different time delay for judging the position of chip 60 failure of connectivity to be measured, need to be obtained
Number, that is, terahertz time-domain reflected signal is in the change of time-delay.Change pump light and swash by adjusting time delay line apparatus
Luminous time delay, thus excite the first photoconductive antenna 51 to terahertz time-domain reflected signal in different time postpones
No rock equivalent sampling, realize the reconstruction of change in time-delay for the terahertz time-domain reflected signal.By to terahertz
The hereby analysis of otdr signal, namely the distance that high frequency electric pulse signal is propagated in chip 60 to be measured can be obtained along lead
Information, you can understand the time delay of fault, phase place and electric pulse reflex strength, thus judge the position of failure of connectivity,
Type and the impedance variation of analysis chip lead.
Using the fault detect to semiconductor integrated circuit for the terahertz time-domain reflex system, its maximum measurement length up to
150mm；Highest measurement precision is less than 5 microns.Wherein, maximum measurement length depends primarily on high frequency electric pulse signal in transmission line
55th, in chip to be measured 60 and the attenuation of electric pulse transceiver module and optical delay line device 40 are to ultra-short pulse laser
Maximum time postpones.In the present embodiment, the intensity of high frequency electric pulse signal (electric current) signal is in na (na) rank, signal ratio
Fainter, all there is decay in transmission line 55 and lead, definition maximum measurement length can be in lead for high frequency electric pulse signal
The distance of middle transmission.Institute's pulse rise time of the ultrashort laser pulse that highest measurement precision is mainly launched by pulse laser 10
Determine, in the present embodiment, the pulse rise time of ultrashort laser pulse is less than 6 psecs (ps), also reflects with terahertz time-domain
The signal to noise ratio of signals collecting is relevant.
Because terahertz time-domain reflex system excites high frequency electric pulse signal using ultrafast laser, this high frequency electric pulse signal
Rise time is extremely short, compares the accuracy of detection that electric time-domain reflectomer can reach micron level, greatly improves the signal to noise ratio of detection,
There is provided high-accuracy, highly sensitive accident analysis for complicated encapsulation.By using terahertz time-domain reflex system, can detect
Reachability problem in complicated encapsulation, technologic leak during finding in time to manufacture, the fault reducing the product that dispatches from the factory is sent out
Raw rate, it is to avoid the factory that returns of chip overhauls, the image of maintaining enterprise.This is that terahertz time-domain reflex system is used for miniaturization complication
The considerable advantage of chip package.
Each technical characteristic of embodiment described above can arbitrarily be combined, for making description succinct, not to above-mentioned reality
The all possible combination of each technical characteristic applied in example is all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all it is considered to be the scope of this specification record.
Embodiment described above only have expressed the several embodiments of the present invention, and its description is more concrete and detailed, but simultaneously
Can not therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
Say, without departing from the inventive concept of the premise, some deformation can also be made and improve, these broadly fall into the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be defined by claims.
Claims (10)
1. a kind of terahertz time-domain reflex system, for being detected it is characterised in that being wrapped to quasiconductor Fault of Integrated Circuits
Include:
Pulse laser, for emission pulse laser；
Beam splitting arrangement, for being pump light and exciting light by described pulse laser beam splitting；
Optical delay line device, is arranged on the direction that described exciting light is propagated, for adjusting described pump light and described exciting
The time delayses of light；
Electric pulse R-T unit, described electric pulse R-T unit is connected with chip to be measured, and described pump light and exciting light all focus on
On described electric pulse R-T unit, described electric pulse R-T unit is used for producing high frequency electric pulse signal and sends to described to be measured
Chip, and receive the high frequency electric pulse signal formation terahertz time-domain reflected signal reflecting from described chip to be measured, and analyze
The fault message of described chip to be measured.
2. terahertz time-domain reflex system according to claim 1 is it is characterised in that described electric pulse R-T unit bag
Include:
First photoconductive antenna, described pump light focuses on described first photoconductive antenna, for producing high frequency electric pulse letter
Number and be delivered to described chip to be measured；
Second photoconductive antenna, described exciting light focuses on described second photoconductive antenna, for receiving from described to be measured
The high frequency electric pulse signal of chip reflection；
Probe, is connected with described first photoconductive antenna, the second photoconductive antenna, chip to be measured respectively；
Signal analysis module, is connected with described second photoconductive antenna, for being acquired to the high frequency electric pulse signal reflecting
Process, form described terahertz time-domain reflected signal and analyze the fault message of described chip to be measured.
3. terahertz time-domain reflex system according to claim 2 is it is characterised in that described signal analysis module includes letter
Number acquisition module and signal processing module, described second photoconductive antenna, signal acquisition module, signal processing module are electrically connected successively
Connect；
Described signal acquisition module is used for being acquired processing and amplifying to the high frequency electric pulse signal of reflection；
Described signal processing module is used for the fault letter forming described terahertz time-domain reflected signal and analyzing described chip to be measured
Breath.
4. terahertz time-domain reflex system according to claim 2 is it is characterised in that described electric pulse R-T unit also wraps
Include direct current biasing module, described direct current biasing module is connected with described first photoconductive antenna, for photoconductive for described first
Antenna provides DC offset voltage.
5. terahertz time-domain reflex system according to claim 2 is it is characterised in that described electric pulse R-T unit also wraps
Include Current amplifier module, described Current amplifier module is connected with described first photoconductive antenna, for described high frequency electric pulse letter
Number it is amplified processing.
6. terahertz time-domain reflex system according to claim 2 is it is characterised in that described electric pulse R-T unit also wraps
Include frequency correction module, described frequency correction module is connected with described first photoconductive antenna, for high shown in monitoring and correction
Frequency electric impulse signal.
7. terahertz time-domain reflex system according to claim 2 is it is characterised in that described electric pulse R-T unit also wraps
Include transmission line, one end of described transmission line is connected with described first photoconductive antenna, the second photoconductive antenna respectively, described transmission
The other end of line is connected with described probe.
8. terahertz time-domain reflex system according to claim 1 is it is characterised in that also include optical fiber, described optical fiber according to
The described pulse laser of secondary connection, beam splitting arrangement, optical delay line device, for transmitting described pulse laser.
9. terahertz time-domain reflex system according to claim 7 is it is characterised in that described beam splitting arrangement couples for optical fiber
Device, the input of described fiber coupler is connected with described optical fiber, and the first outfan of described fiber coupler is used for exporting institute
State pump light, the second outfan of described fiber coupler is used for exporting described exciting light.
10. terahertz time-domain reflex system according to claim 1 is it is characterised in that described beam splitting arrangement is beam splitter.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610903169.7A CN106353634A (en) | 2016-10-17 | 2016-10-17 | Terahertz time-domain reflecting system |
| PCT/CN2017/106248 WO2018072660A1 (en) | 2016-10-17 | 2017-10-16 | Terahertz time-domain reflectometry system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610903169.7A CN106353634A (en) | 2016-10-17 | 2016-10-17 | Terahertz time-domain reflecting system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106353634A true CN106353634A (en) | 2017-01-25 |
Family
ID=57866129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610903169.7A Pending CN106353634A (en) | 2016-10-17 | 2016-10-17 | Terahertz time-domain reflecting system |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN106353634A (en) |
| WO (1) | WO2018072660A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018072660A1 (en) * | 2016-10-17 | 2018-04-26 | 深圳市太赫兹科技创新研究院 | Terahertz time-domain reflectometry system |
| CN108712214A (en) * | 2018-05-08 | 2018-10-26 | 浙江大学 | A kind of tunable mostly band terahertz pulse wireless communication emitter |
| CN111638387A (en) * | 2020-06-12 | 2020-09-08 | 中国科学院长春光学精密机械与物理研究所 | STM dynamic response detection system and method based on double displacement tables |
| CN112014329A (en) * | 2020-10-21 | 2020-12-01 | 季华实验室 | Imaging system and method for internal structure of semiconductor product |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113985245B (en) * | 2021-10-13 | 2023-10-31 | 深钛智能科技(苏州)有限公司 | Semiconductor chip test system |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4875006A (en) * | 1988-09-01 | 1989-10-17 | Photon Dynamics, Inc. | Ultra-high-speed digital test system using electro-optic signal sampling |
| CN1479109A (en) * | 2002-08-30 | 2004-03-03 | 威盛电子股份有限公司 | Method of judging continuous failure occuring position using wave shape |
| CN101063609A (en) * | 2006-04-28 | 2007-10-31 | 佳能株式会社 | Terahertz inspection apparatus and inspection method |
| CN102426306A (en) * | 2011-09-13 | 2012-04-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Ultrafast electronic device test system and method thereof |
| US20130002283A1 (en) * | 2011-05-08 | 2013-01-03 | Stmicroelectronics Sa | Defect Detection by Thermal Frequency Imaging |
| CN103635819A (en) * | 2011-02-11 | 2014-03-12 | 特瑞视觉有限公司 | Reflectometer test device for integrated circuits |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104931906B (en) * | 2015-05-11 | 2017-12-29 | 中国船舶重工集团公司第七0九研究所 | The transmission delay calibration method and system of the digital channel of integrated circuit test system |
| CN106353634A (en) * | 2016-10-17 | 2017-01-25 | 深圳市太赫兹科技创新研究院 | Terahertz time-domain reflecting system |
-
2016
- 2016-10-17 CN CN201610903169.7A patent/CN106353634A/en active Pending
-
2017
- 2017-10-16 WO PCT/CN2017/106248 patent/WO2018072660A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4875006A (en) * | 1988-09-01 | 1989-10-17 | Photon Dynamics, Inc. | Ultra-high-speed digital test system using electro-optic signal sampling |
| CN1479109A (en) * | 2002-08-30 | 2004-03-03 | 威盛电子股份有限公司 | Method of judging continuous failure occuring position using wave shape |
| CN101063609A (en) * | 2006-04-28 | 2007-10-31 | 佳能株式会社 | Terahertz inspection apparatus and inspection method |
| CN103635819A (en) * | 2011-02-11 | 2014-03-12 | 特瑞视觉有限公司 | Reflectometer test device for integrated circuits |
| US20130002283A1 (en) * | 2011-05-08 | 2013-01-03 | Stmicroelectronics Sa | Defect Detection by Thermal Frequency Imaging |
| CN102426306A (en) * | 2011-09-13 | 2012-04-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Ultrafast electronic device test system and method thereof |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018072660A1 (en) * | 2016-10-17 | 2018-04-26 | 深圳市太赫兹科技创新研究院 | Terahertz time-domain reflectometry system |
| CN108712214A (en) * | 2018-05-08 | 2018-10-26 | 浙江大学 | A kind of tunable mostly band terahertz pulse wireless communication emitter |
| CN108712214B (en) * | 2018-05-08 | 2019-10-18 | 浙江大学 | A kind of tunable mostly band terahertz pulse wireless communication emitter |
| CN111638387A (en) * | 2020-06-12 | 2020-09-08 | 中国科学院长春光学精密机械与物理研究所 | STM dynamic response detection system and method based on double displacement tables |
| CN111638387B (en) * | 2020-06-12 | 2021-08-03 | 中国科学院长春光学精密机械与物理研究所 | STM dynamic response detection system and method based on double displacement tables |
| CN112014329A (en) * | 2020-10-21 | 2020-12-01 | 季华实验室 | Imaging system and method for internal structure of semiconductor product |
| CN112014329B (en) * | 2020-10-21 | 2021-04-20 | 季华实验室 | Imaging system and method for internal structure of semiconductor product |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018072660A1 (en) | 2018-04-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106353634A (en) | Terahertz time-domain reflecting system | |
| Cai et al. | Electro Optical Terahertz Pulse Reflectometry—an innovative fault isolation tool | |
| CN102426198B (en) | Acoustic emission signal sensing system based on matching-type fiber Bragg grating (FBG) | |
| CN102313779B (en) | Acoustic emission signal sensing system based on fiber Bragg grating | |
| CN106646323B (en) | A kind of co-planar waveguide probe transmission characteristic measuring device and method | |
| CN205843813U (en) | A kind of device of all-fiber formula time domain short scan tera-hertz spectra based on fiber stretcher | |
| CN108287132B (en) | Terahertz asynchronous high-speed scanning system trigger signal generation device and method | |
| CN113759234B (en) | Method for testing frequency response of photoelectric detector chip | |
| CN109459719B (en) | Method and device for calibrating rise time of broadband oscilloscope probe | |
| CN102426306B (en) | Ultrafast electronic device test system and method thereof | |
| CN105577270A (en) | Clock extraction device, clock extraction method and eye pattern testing equipment | |
| CN102353524A (en) | Method and apparatus for testing dynamic spectrum of semiconductor laser | |
| CN104459594B (en) | A kind of measurement apparatus of high-frequency microwave probe multifrequency characteristic and method | |
| CN209264104U (en) | A kind of measuring device of high speed rotor vibrational state | |
| CN208076389U (en) | A kind of terahertz light spectrometer | |
| CN207475555U (en) | A kind of ultra wide band multichannel optoelectronic integration detector for microwave photon system | |
| CN208076388U (en) | A kind of Terahertz detection device | |
| CN113834791B (en) | Pumping light excitation distinguishable femtosecond transient absorption system and measurement method | |
| CN207720138U (en) | A kind of OTDR devices based on multi-channel optical fibre optical monitoring signal | |
| CN115877052A (en) | Ultrafast pulse signal generation calibration device, calibration system and calibration method | |
| CN109813528A (en) | Detection method is lost in optical fiber laser based on optical time domain reflection principle | |
| CN212229183U (en) | X-ray ultrafast detection device | |
| CN211784213U (en) | Gain optical fiber photodarkening testing device based on fiber core pumping | |
| CN215064946U (en) | A leak protection collection system for distributed optical fiber temperature measurement system | |
| CN108333161B (en) | Pulse laser multiple round trip utilization device based on optical fiber and fluorescence signal detection method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170125 |
|
| RJ01 | Rejection of invention patent application after publication |