CN102426306A - Ultrafast electronic device test system and method thereof - Google Patents
Ultrafast electronic device test system and method thereof Download PDFInfo
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- CN102426306A CN102426306A CN2011102693063A CN201110269306A CN102426306A CN 102426306 A CN102426306 A CN 102426306A CN 2011102693063 A CN2011102693063 A CN 2011102693063A CN 201110269306 A CN201110269306 A CN 201110269306A CN 102426306 A CN102426306 A CN 102426306A
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Abstract
The invention discloses an ultrafast electronic device test system and a method thereof. The system comprises a femtosecond pulse laser, a femtosecond pulse delayed time system, an electric pulse generation module, an electric pulse detection module and a data collection correction system. According to the method, an optical delayed time system is utilized to divide a light beam into two beams of femtosecond pulse lights with certain time delay. One beam of laser is gathered on a high-speed photodiode and a short electric pulse generated by a photoelectric effect of the photodiode is utilized to carry out current input or electric field input on a high-speed electronic device; and another beam of the femtosecond pulse light is focused on a minielectro-optic crystal that is connected to an output circuit of the ultrafast electronic device as well as a photoelectric detector is utilized to carry out testing on pulse light intensity that is reflected or transmitted from the minielectro-optic crystal; and time delay of the two beams of lights is changed, so that timing sequence measurement is carried out on the ultrafast electronic device. According to the invention, a testing problem of a timing sequence response of an ultrafast electronic device can be effectively solved.
Description
Technical field
The present invention be more particularly directed to a kind of ultrafast electron device testing system and method, be used to measure response time and the bandwidth that the response time reaches the above high-speed electronic components of GHz, belong to the microelectronics field of measuring technique.
Background technology
The common method of test electronic device response time is the bandwidth of test electronic device at present; Promptly pass through sinusoidal signal to a series of frequencies of amplitudes such as electron device input; Measure the amplitude of electron device output sinusoidal signal again; When the amplitude of output signal was reduced to 0.7 times of low frequency along with the raising of incoming frequency, this frequency was the bandwidth of electron device.Yet the measuring method of aforementioned response time all need adopt much faster that equipment is realized than response device; After the response time of electron device reaches more than the GHz; Just be difficult to search out its bandwidth and the equipment of response time be fit to measured, this is a technical barrier needing to be resolved hurrily of industry just also.
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Summary of the invention
The objective of the invention is to provides a kind of ultrafast electron device testing system and method to deficiency of the prior art, to realize the synchro measure to ultrafast electron device response time and response frequency bandwidth.
For realizing the foregoing invention purpose, the present invention has adopted following technical scheme:
A kind of ultrafast electron device response test method; It is characterized in that: a branch of femtosecond optics short pulse that utilizes the femtosecond pulse delayed time system that femtosecond pulse laser is produced is divided into the two bundle femtosecond pulse light that the time-delay set is arranged; And wherein a branch of femtosecond pulse light accumulates on the electric pulse generation module; Convert short electric pulse to by this electric pulse generation module tested ultrafast electron device is carried out the input of electric current or electric field; Simultaneously another bundle femtosecond pulse light is focused on the electro-optic crystal in the electric pulse detecting module; Said electro-optic crystal is connected with the output circuit of tested ultrafast electron device; The pulse light intensity of utilizing the photodetector in the said electric pulse detecting module to detect reflection or transmission from said electro-optic crystal again detects, and through changing the time-delay of this two bundles femtosecond pulse light, realizes the time-ordered measurement to ultrafast electron device.
A kind of ultrafast electron device response test system is characterized in that it comprises:
Be used to provide the femtosecond pulse laser of femtosecond optics short pulse;
Be used for femtosecond optics short pulse is carried out the femtosecond pulse delayed time system of beam split and delay process;
Be used to provide the electric current that generation time can control or the electric pulse generation module of electric field signal, said electric current or electric field signal are loaded into the input end of tested ultrafast electron device with the test electric pulse;
Be used to monitor the electric pulse detecting module of tested ultrafast electron device output signal;
And, be used to gather the output signal of electric pulse detecting module, solve background rejection and the mutual data converted acquisition correction of temporal frequency system in measuring.
Say that further said femtosecond pulse delayed time system comprises:
The a branch of femtosecond optics short pulse that is used for importing is divided into the spectroscope of two bundle femtosecond pulse light;
And the delay line of built-in reflective mirror, change the optical path difference of pulse through the locus of adjusting said catoptron, and then realize the time-delay of two bundle femtosecond pulse light.
Said electric pulse generation module comprises fiber coupling system, no color differnece optical fiber, ultrafast photoelectric commutator, ultrafast photoelectric commutator is carried out the controller and the condenser mirror of position operation;
Said condenser mirror focuses on fiber coupling system with femtosecond pulse light; Fiber coupling system is optically coupled into no color differnece optical fiber with femtosecond pulse then; Pulsed light in the no color differnece optical fiber excites attached to the ultrafast photoelectric commutator on the no color differnece optical fiber head and sends electric signal, and aforementioned controller is used for ultrafast photoelectric commutator is positioned over the input end of tested ultrafast electron device.
Said ultrafast photoelectric commutator is selected from ultrafast photoelectric diode, photoconduction antenna, TeZn crystal, the LiNbO of switching time less than 30 ps
3Crystal, LiTaO
3More than in crystal, ZnTe crystal, InP crystal and the AsGa crystal any one.
Said electric pulse detecting module comprises spectroscope, fiber coupling system, no color differnece optical fiber, be coupling in electro-optic crystal on the no color differnece optical fiber head, polarization spectroscope, first photodetector, second photodetector, photoelectric commutator carried out the controller and the condenser mirror of position operation;
After said condenser mirror focuses on fiber coupling system with femtosecond pulse light; By fiber coupling system pulsed light is coupled into no color differnece optical fiber; Be reflected into no color differnece optical fiber by said electro-optic crystal again; And, be reflected into the light that polarization spectroscope forms two bundle cross polarizations through spectroscope thereafter from the fiber coupling system outgoing, then by first photodetector and second photodetector light intensity variation of the light of this two bundles cross polarization is measured respectively;
Said controller is used for said electro-optic crystal is positioned over the output terminal of tested ultrafast electron device.
Said electro-optic crystal is selected from more than in ZnTe crystal, InP crystal and the AsGa crystal any one.
Adopt femtosecond pulse laser to produce femtosecond optics short pulse among the present invention; And input femtosecond pulse delayed time system, being divided into two bundles by the spectroscope in this femtosecond pulse delayed time system, the optical path difference of this two-beam can be controlled by the right locus of regulating in the delay line of reflective mirror; Thereby realize the time-delay of two bundle femtosecond pulse light; Wherein a branch of pulsed light gets into the electric pulse generation module, and condenser focuses on pulsed light in the fiber coupling system in this electric pulse generation module, with fiber coupling system pulsed light is coupled in the optical fiber then; Laser pulse excites attached to the ultrafast photoelectric commutator on the optical fiber head and sends electric signal; This electric signal is imported in the tested electron device, the moment refractive index ratio of the output signal change electro-optic crystal of tested electron device, thereby the polarised direction of the pulsed light of change incident; Another beam pulse light is then imported in the electric pulse detecting module, by condenser this beam pulse light is focused on fiber coupling system, is coupled in the no color differnece optical fiber again; Thereafter by reflecting in the electro-optic crystal; Get into spectroscope through fiber coupling system again, then get into polarization spectroscope, be divided into the two-beam of different polarization; Light intensity through measuring this two-beam strong and weak relatively, just can calculate laser pulse arrival is the electric field intensity on the electro-optic crystal.So, through changing the time delay of aforementioned two bundle femtosecond pulse light, just can obtain the timing variations of the electric field on the electro-optic crystal.
Through analyzing the difference of two kinds of bar timing curves when tested electron device being arranged and do not have tested electron device, just can obtain the time of ultrafast electron device and the character of frequency response.
The present invention has realized the synchronous evaluation and test to the time of ultrafast electron device and frequency response character, and has overcome temporal resolution defect of insufficient in the existing electronics measurement.
Description of drawings:
Fig. 1 is the structural representation of ultrafast electron device response test system in the present invention's one preferred embodiment;
The implication of each mark is among the figure: the 100-femtosecond pulse laser; The 201-spectroscope; The 202-delay line; 301-fiber coupling system optical fiber; 302-no color differnece optical fiber; The ultrafast photoelectric commutator of 303-; The ultrafast photoelectric commutator of 304-carries out the controller of position operation; 305-light condenser mirror; The 401-spectroscope; The 402-fiber coupling system; 403-no color differnece optical fiber; 404-is coupling in the electro-optic crystal on the optical fiber head; The 405-polarization spectroscope; 406-photodetector 1; 407-photodetector 2; The 408-photoelectric commutator carries out the controller of position operation; The 409-condenser mirror; 500-data acquisition corrective system.
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Embodiment
Below in conjunction with an accompanying drawing and a preferred embodiment technical scheme of the present invention is further described.
Consult Fig. 1, this ultrafast electron device response test systems adopts modular design, and it comprises femtosecond pulse laser 100, femtosecond pulse delayed time system, electric pulse generation module, electric pulse detecting module and data acquisition corrective system 500.
Wherein, femtosecond pulse laser is used to provide femtosecond optics short pulse;
The femtosecond pulse delayed time system is used to provide the signal generation of measuring system and the time delay of surveying to change, and it comprises 201-spectroscope, delay line 202;
The electric pulse generation module is used to the test electric pulse that provides a generation time to control;
The electric pulse detecting module can be surveyed the electric signal of in very short time (several femtoseconds are to psec);
Data acquisition corrective system 500 is used for gathering the output signal of photodetector, solves the background rejection in measuring, the mutual conversion of temporal frequency.
Further say,
Aforementioned femtosecond pulse delayed time system comprises:
The a branch of femtosecond optics short pulse that is used for importing is divided into the spectroscope 201 of two bundle femtosecond pulse light;
And the right delay line 202 of built-in reflective mirror, can change the optical path difference of pulse through adjusting the right locus of said catoptron, and then realize the time-delay of two bundle femtosecond pulse light.
Aforementioned electric pulse generation module comprises fiber coupling system 301, no color differnece optical fiber 302, ultrafast photoelectric commutator 303, ultrafast photoelectric commutator is carried out the controller 304 and the condenser mirror 305 of position operation;
Aforementioned ultrafast photoelectric commutator is selected from ultrafast photoelectric diode, photoconduction antenna, TeZn crystal, the LiNbO of switching time less than 30 ps
3Crystal, LiTaO
3More than in crystal, ZnTe crystal, InP crystal and the AsGa crystal any one.
Aforementioned electric pulse detection module comprises spectroscope 401, fiber coupling system 402, no color differnece optical fiber 403, be coupling in electro-optic crystal 404 on the no color differnece optical fiber head, polarization spectroscope 405, first photodetector 406, second photodetector 407, photoelectric commutator carried out the controller 408 and the condenser mirror 409 of position operation;
After condenser mirror 409 focuses on fiber coupling system 402 with femtosecond pulse light; By fiber coupling system 402 pulsed light is coupled into no color differnece optical fiber 403; Be reflected into no color differnece optical fiber 403 by said electro-optic crystal 404 again; And from fiber coupling system 402 outgoing; Through spectroscope 401 be reflected into light that polarization spectroscope 405 form two bundle cross polarizations, then change by the light intensity of the light of first photodetector 406 and 407 pairs of these two bundles cross polarizations of second photodetector respectively and measure thereafter;
Said controller 408 is used for said electro-optic crystal 404 is positioned over the output terminal of tested ultrafast electron device.
The aforementioned electric luminescent crystal is selected from more than in ZnTe crystal, InP crystal and the AsGa crystal any one.
In the present embodiment, after the femtosecond optics short pulse that is produced by femtosecond pulse laser is transfused to the femtosecond pulse delayed time system, be divided into two bundles by spectroscope 201; The optical path difference of this two-beam can be controlled by the right locus of regulating in the delay line 202 of reflective mirror; Realize the time-delay of two bundle femtosecond pulse light, wherein a branch of pulsed light gets into the electric pulse generation module, in this module; Condenser 305 focuses on pulsed light in the fiber coupling system 301; With fiber coupling system pulsed light is coupled in the no color differnece optical fiber 302 then, laser pulse excites attached to the ultrafast photoelectric commutator 303 on the optical fiber head and sends electric signal, and this electric signal is imported in the tested electron device; The moment refractive index ratio of the output signal change electro-optic crystal 404 of electron device, thereby the polarised direction of the pulsed light of change incident.In the electric pulse detecting module; By condenser 409 femtosecond laser beam is focused on fiber coupling system 402; The femto-second laser pulse that is coupled into no color differnece optical fiber 403 reflects in electro-optic crystal 404; Through fiber coupling system after by spectroscope 401 entering polarization spectroscopes 405; And in polarization spectroscope, be divided into two bundles of different polarization, and measure light intensity strong and weak relatively of this two-beam respectively through two photodetectors 406 and photodetection 407, can calculate that laser pulse arrives is the electric field intensity on the electro-optic crystal.
Through changing the time delay of aforementioned two bundle femtosecond pulse light, just can obtain the timing variations of the electric field on the electro-optic crystal.
Need to prove that when not having measured device, electric field change has certain prolongation and change in the test macro of present embodiment, but the timing variations curve when can not have measured device through measurement is corrected measurement result.
Through analysis the difference of the timing curve under measured device and two kinds of situation of no measured device is arranged, just can obtain the time of tested ultrafast electron device and the character of frequency response.
The present invention can realize the synchronous evaluation and test to the time of ultrafast electron device and frequency response character, and can overcome temporal resolution defect of insufficient in the existing electronics measurement.
Above-mentioned preferred embodiment only is explanation technical conceive of the present invention and characteristics; Its purpose is to let the understanding of being familiar with this technology can understand content of the present invention and enforcement according to this; Can not limit protection scope of the present invention with this; All equivalences that spirit is done according to the present invention change or modify, and all should be encompassed within protection scope of the present invention.
Claims (10)
1. ultrafast electron device response test method; It is characterized in that: a branch of femtosecond optics short pulse that utilizes the femtosecond pulse delayed time system that femtosecond pulse laser is produced is divided into the two bundle femtosecond pulse light that the time-delay set is arranged; And wherein a branch of femtosecond pulse light accumulates on the electric pulse generation module; Convert short electric pulse to by this electric pulse generation module tested ultrafast electron device is carried out the input of electric current or electric field; Simultaneously another bundle femtosecond pulse light is focused on the electro-optic crystal in the electric pulse detecting module; Said electro-optic crystal is connected with the output circuit of tested ultrafast electron device; The pulse light intensity of utilizing the photodetector in the said electric pulse detecting module to detect reflection or transmission from said electro-optic crystal again detects, and through changing the time-delay of this two bundles femtosecond pulse light, realizes the time-ordered measurement to ultrafast electron device.
2. ultrafast electron device response test method according to claim 1, it is characterized in that: said femtosecond pulse delayed time system comprises:
The a branch of femtosecond optics short pulse that is used for importing is divided into the spectroscope (201) of two bundle femtosecond pulse light;
And the right delay line (202) of built-in reflective mirror, change the optical path difference of pulse through adjusting the right locus of said catoptron, and then realize the time-delay of two bundle femtosecond pulse light.
3. ultrafast electron device response test method according to claim 1 is characterized in that: said electric pulse generation module comprises fiber coupling system (301), no color differnece optical fiber (302), ultrafast photoelectric commutator (303), ultrafast photoelectric commutator is carried out the controller (304) and the condenser mirror (305) of position operation;
Said condenser mirror (305) focuses on fiber coupling system (301) with femtosecond pulse light; Fiber coupling system (301) is optically coupled into no color differnece optical fiber (302) with femtosecond pulse then; Pulsed light in the no color differnece optical fiber (302) excites attached to the ultrafast photoelectric commutator (303) on the no color differnece optical fiber head and sends electric signal, and said controller (304) is used for ultrafast photoelectric commutator (303) is positioned over the input end of tested ultrafast electron device;
Said ultrafast photoelectric commutator is selected from ultrafast photoelectric diode, photoconduction antenna, TeZn crystal, the LiNbO of switching time less than 30 ps
3Crystal, LiTaO
3More than in crystal, ZnTe crystal, InP crystal and the AsGa crystal any one.
4. ultrafast electron device response test method according to claim 1 is characterized in that: said electric pulse detecting module comprises spectroscope (401), fiber coupling system (402), no color differnece optical fiber (403), be coupling in electro-optic crystal (404) on the no color differnece optical fiber head, polarization spectroscope (405), first photodetector (406), second photodetector (407), photoelectric commutator carried out the controller (408) and the condenser mirror (409) of position operation;
After said condenser mirror (409) focuses on fiber coupling system (402) with femtosecond pulse light; By fiber coupling system (402) pulsed light is coupled into no color differnece optical fiber (403); Be reflected into no color differnece optical fiber (403) by said electro-optic crystal (404) again; And from fiber coupling system (402) outgoing; Through spectroscope (401) be reflected into light that polarization spectroscope (405) form two bundle cross polarizations, then by first photodetector (406) and second photodetector (407) the light intensity variation of the light of this two bundles cross polarization measured respectively thereafter;
Said controller (408) is used for said electro-optic crystal (404) is positioned over the output terminal of tested ultrafast electron device;
Said electro-optic crystal is selected from more than in ZnTe crystal, InP crystal and the AsGa crystal any one.
5. ultrafast electron device response test system is characterized in that it comprises:
Be used to provide the femtosecond pulse laser of femtosecond optics short pulse;
Be used for femtosecond optics short pulse is carried out the femtosecond pulse delayed time system of beam split and delay process;
Be used to provide the electric current that generation time can control or the electric pulse generation module of electric field signal, said electric current or electric field signal are loaded into the input end of tested ultrafast electron device with the test electric pulse;
Be used to monitor the electric pulse detecting module of tested ultrafast electron device output signal;
And, be used to gather the output signal of electric pulse detecting module, solve background rejection and the mutual data converted acquisition correction of temporal frequency system in measuring.
6. ultrafast electron device response test according to claim 5 system, it is characterized in that: said femtosecond pulse delayed time system comprises:
The a branch of femtosecond optics short pulse that is used for importing is divided into the spectroscope (201) of two bundle femtosecond pulse light;
And the delay line of built-in reflective mirror (202), change the optical path difference of pulse through the locus of adjusting said catoptron, and then realize the time-delay of two bundle femtosecond pulse light.
7. ultrafast electron device response test according to claim 5 system is characterized in that: said electric pulse generation module comprises fiber coupling system (301), no color differnece optical fiber (302), ultrafast photoelectric commutator (303), ultrafast photoelectric commutator is carried out the controller (304) and the condenser mirror (305) of position operation;
Said condenser mirror (305) focuses on fiber coupling system (301) with femtosecond pulse light; Fiber coupling system (301) is optically coupled into no color differnece optical fiber (302) with femtosecond pulse then; Pulsed light in the no color differnece optical fiber (302) excites attached to the ultrafast photoelectric commutator (303) on the no color differnece optical fiber head and sends electric signal, and said controller (304) is used for ultrafast photoelectric commutator (303) is positioned over the input end of tested ultrafast electron device.
8. ultrafast electron device response test according to claim 7 system, it is characterized in that: said ultrafast photoelectric commutator is selected from ultrafast photoelectric diode, photoconduction antenna, TeZn crystal, the LiNbO of switching time less than 30 ps
3Crystal, LiTaO
3More than in crystal, ZnTe crystal, InP crystal and the AsGa crystal any one.
9. ultrafast electron device response test according to claim 5 system is characterized in that: said electric pulse detecting module comprises spectroscope (401), fiber coupling system (402), no color differnece optical fiber (403), be coupling in electro-optic crystal (404) on the no color differnece optical fiber head, polarization spectroscope (405), first photodetector (406), second photodetector (407), photoelectric commutator carried out the controller (408) and the condenser mirror (409) of position operation;
After said condenser mirror (409) focuses on fiber coupling system (402) with femtosecond pulse light; By fiber coupling system (402) pulsed light is coupled into no color differnece optical fiber (403); Be reflected into no color differnece optical fiber (403) by said electro-optic crystal (404) again; And from fiber coupling system (402) outgoing; Through spectroscope (401) be reflected into light that polarization spectroscope (405) form two bundle cross polarizations, then by first photodetector (406) and second photodetector (407) the light intensity variation of the light of this two bundles cross polarization measured respectively thereafter;
Said controller (408) is used for said electro-optic crystal (404) is positioned over the output terminal of tested ultrafast electron device.
10. ultrafast electron device response test according to claim 9 system is characterized in that: said electro-optic crystal is selected from more than in ZnTe crystal, InP crystal and the AsGa crystal any one.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106353634A (en) * | 2016-10-17 | 2017-01-25 | 深圳市太赫兹科技创新研究院 | Terahertz time-domain reflecting system |
| CN112858805A (en) * | 2020-12-29 | 2021-05-28 | 西南技术物理研究所 | Frequency response characteristic parameter measuring device for quadrant photoelectric detector |
| CN113203761A (en) * | 2021-04-21 | 2021-08-03 | 华中科技大学 | Time resolution sample inspection device with multiple working modes |
| CN114459621A (en) * | 2022-02-10 | 2022-05-10 | 中国空间技术研究院 | Superconducting X-ray detector time jitter calibration system and method |
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| US4931704A (en) * | 1988-12-09 | 1990-06-05 | Alfano Robert R | Ultrafast sampling oscilloscope |
| JPH05126866A (en) * | 1991-11-05 | 1993-05-21 | Nippon Steel Corp | Method and apparatus for measuring ultrahigh-speed electric signal |
| US20020097761A1 (en) * | 1994-04-01 | 2002-07-25 | Imra America, Inc. | Scanning temporal ultrafast delay methods and apparatuses therefor |
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Patent Citations (4)
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| US4931704A (en) * | 1988-12-09 | 1990-06-05 | Alfano Robert R | Ultrafast sampling oscilloscope |
| JPH05126866A (en) * | 1991-11-05 | 1993-05-21 | Nippon Steel Corp | Method and apparatus for measuring ultrahigh-speed electric signal |
| US20020097761A1 (en) * | 1994-04-01 | 2002-07-25 | Imra America, Inc. | Scanning temporal ultrafast delay methods and apparatuses therefor |
| EP0790492B1 (en) * | 1996-02-16 | 2005-12-28 | Imra America, Inc. | Scanning temporal ultrafast delay method |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106353634A (en) * | 2016-10-17 | 2017-01-25 | 深圳市太赫兹科技创新研究院 | Terahertz time-domain reflecting system |
| WO2018072660A1 (en) * | 2016-10-17 | 2018-04-26 | 深圳市太赫兹科技创新研究院 | Terahertz time-domain reflectometry system |
| CN112858805A (en) * | 2020-12-29 | 2021-05-28 | 西南技术物理研究所 | Frequency response characteristic parameter measuring device for quadrant photoelectric detector |
| CN112858805B (en) * | 2020-12-29 | 2023-02-28 | 西南技术物理研究所 | Frequency response characteristic parameter measuring device for quadrant photoelectric detector |
| CN113203761A (en) * | 2021-04-21 | 2021-08-03 | 华中科技大学 | Time resolution sample inspection device with multiple working modes |
| CN113203761B (en) * | 2021-04-21 | 2022-04-01 | 华中科技大学 | Time resolution sample inspection device with multiple working modes |
| CN114459621A (en) * | 2022-02-10 | 2022-05-10 | 中国空间技术研究院 | Superconducting X-ray detector time jitter calibration system and method |
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