CN1024236C - Method for obtaining heterojunction semiconductor and super crystal lattice materials and equipments thereof - Google Patents
Method for obtaining heterojunction semiconductor and super crystal lattice materials and equipments thereof Download PDFInfo
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- 239000010703 silicon Substances 0.000 claims description 23
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- 229910000077 silane Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 6
- 238000013461 design Methods 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 5
- -1 tungsten halogen Chemical class 0.000 claims description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 4
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- 230000001934 delay Effects 0.000 claims description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 2
- 238000007493 shaping process Methods 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000005086 pumping Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 9
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- 238000005229 chemical vapour deposition Methods 0.000 description 6
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- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 5
- 238000000407 epitaxy Methods 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
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Abstract
The present invention relates to a method and a special growth device for obtaining atomic lattice materials on semiconductor substrate materials. Gas phase materials are injected in a transparent chamber, vacuum conditions lower than 10+[-2] torr are maintained, and the gas phase materials are heated by a lamp, react on the surface of a substrate and deposit. Reaction and deposition temperature are higher than the pyrolysis temperature of the gas phase materials or other critical reaction temperatures, multiple layers of homogeneous or heterogeneous super crystal lattice materials are obtained by repeating the processes, and optimum growth temperature is controlled in a nearby temperature zone higher than the pyrolysis temperature of the gas phase materials or the critical reaction temperatures. The special growth device comprises a conventional CVD device, a vacuum pumping device and a lamp heating device, a mass flow controller and is best to be controlled by a computer.
Description
The present invention relates on semiconducting matrix material, obtain atom level lattice material, heterojunction semiconductor and the growing method of super crystal lattice material and the design and the manufacturing of equipment thereof.
The existing growth technique of producing semiconductor heterostructure material and super crystal lattice material (comprising various superthin layers, multilayer material, as the sub-micron epitaxial loayer of silicon) all adopts molecular beam epitaxy (MBE) method and special equipment.Molecular Beam Epitaxy(LLChang, Chapter9, edited by SPKeller, North Holland, 1980), (Zhang Ligang, molecular beam epitaxy, chapter 9, Keller chief editor, northern lotus publishing house, 1980).Disclose this equipment and technology in detail, it is a kind of method that molecular beam or atomic beam carry out epitaxial diposition that evaporates from ultra-high vacuum system, and the material low excessively to vapour pressure (as the most frequently used silicon, germanium) also needs to have beam bombardment equipment.MBE is the contemporary epitaxially grown advanced technology of atom level that realizes, but because its apparatus expensive, maintenance cost height, operation spend greatly, the growth area is little, and operating efficiency is not high, causes difficulty of its industrial practicability.On the other hand, existing chemical vapor deposition (CVD) technology can only be used for the production process of semiconductor thick film of growing, the superlattice class atom magnitude material that can not be used to grow, and prior art can not satisfy the requirement that very lagre scale integrated circuit (VLSIC) obtains super thin oxide layer in making.
The objective of the invention is in order to design a kind of low cost, large tracts of land, high efficiency, more be rich in the growth atom level material-semiconductor heterostructure of practicality and the method and apparatus of super crystal lattice material, be used in particular for various strained layer heterogeneous structure materials of growth and super crystal lattice material on semiconductive material substrate, technology and the corresponding apparatus of development CVD.
Technical solution of the present invention is: have one and inject the gas phase material source in transparency window or the bright condition of high vacuum degree reative cell of full impregnated, under the ultralow pressure condition, adopt quick light radiation heating (lamp heating) to gas phase material pyrolysis temperature or other critical reaction temperature, make gas phase material realize the pyrolytic deposition film at substrate surface.Look and adopt different sources of the gas, sets different growth temperatures, generally be with the low-temperature epitaxy condition good-promptly skip over the interval of some, promptly so-called cryogenic conditions in the decomposition temperature of source of the gas.For guaranteeing the low-temperature epitaxy quality, remove the hot cleaning technique that adopts similar MBE at substrate surface before this method deposit, also can adopt Ar
+The in-situ sputtering cleaning, to divest the remaining compound of substrate surface, acquisition clean substrates surface, in growth course, look and inject various gas phase material or mixture, the different layer material (sub-micron) of epitaxial growth on substrate accordingly, as alternately injecting different gas phase materials, nationality helps as above, and technology can obtain multilayer hetero-structure and super crystal lattice material, such technical process both had been suitable for the lattice match superlattice of growing, the strained layer superlattice material of the lattice mismatch of also can growing: as the superlattice Ge of the formation of grown silicon germanium alloy and silicon on silicon base
XSi
1-X: Si/Si; Superlattice GaAlAs:GaAs/GaAs that growth Aluminum gallium arsenide and GaAs constitute on GaAs or the like.
The inventive method adopts bigger heating power in temperature-rise period, make the intensification temperature speed of host material reach 150 ℃/more than the S.Generally about 200 ℃/S (temperature rise＜100 ℃ when adding graphite and setting off/S, but also＞70 ℃/S,＜350 ℃).The balance heating power and the heating-up temperature of lamp are determined by the gas phase material heat decomposition temperature, as about 600 ℃ of the pyrolysis temperatures of silane, the optimal spectrum scope of lamp heating is absorbed by base material for can and being easy to by transparent growth room, when making transparency window with quartz glass and even doing the whole growth chamber, can select for use near-infrared to the visible light spectrum scope.The ultralow end finger 10 of the inventive method
-2～10
-10The Torr vacuum condition.
Utilization foregoing invention method can be made special equipment, and it comprises conventional CVD equipment: promptly growth room, mass flow controller, also be provided with oil-sealed rotary pump and oil diffusion pump or turbomolecular pump; Other is provided with the lamp heating system: ring is put tens of tungsten halogen lamps of several Zhi Naizhi around the growth room that quartz glass is made, and the quantity of fluorescent tube and corresponding heating power are relevant with the different materials of reaction chamber size and growth.Be generally 5～25.Mass flow controller is the device of manual or automatic control flow and flow velocity, its termination gas phase compound source (placing in the compression steel cylinder).The other end meets the growth room, and connecting tube can be that various solid materials are made, the most handy anti-corrosion stainless steel.Built-in pressure in growth room and temperature sensor, pressure sensor are that metering vacuum degree is regulated with ionization, and temperature sensor is the thermometer of 0 ℃～1200 ℃ of measurements, for example nichrome alumino-nickel couple.Utilize temperature sensor and electronic temperature controller control lamp heating power can obtain a certain thermostat temperature, generally need continuity 5S～10S, utilize PD mode (proportion differential method) can obtain more stable temperature control.Adopt constant temperature or be heated to more than the source of the gas pyrolysis temperature again that cooling also is feasible in whole growth process.Reach the control of above-mentioned flow and temperature and all can realize for routine techniques, open as all having in automatic control of heat treatment and the flow automatic control technology data.As for the growth of multilayer homogeneity, heterogeneous super crystal lattice material, need control the gating of gas phase material and mass flow control, control lamp heating-up temperature simultaneously with single board computer or other microcomputer (central controller).Write a series of subprograms, only need relevant subprogram is made up the multilayer growth that just can carry out different materials, utilize computer can change growth time and growth temperature easily.As working out PD algorithm constant temperature subprogram; Growth room's temperature control subprogram; Growth A layer heats up and cooling control interrupt service routine; Growth A
xB
1-xLayer heats up and interrupt service routine or the like is controlled in cooling.Growth apparatus also is provided with the power supply and the electrode of the direct current sputtering cleaning host material of 500～2500V, is used for inert gas (as Ar) ionization.
Growth silicon and germanium super crystal lattice (is host material with silicon or germanium wafer), feed silane, germane or arbitrarily mixed proportion the silane germane or in silicon, germane the process conditions of three, five family's gas phase materials such as doping phosphine or borine: ultralow pressure 10
-2Below the Torr, 550～700 ℃ of constant temperature growth temperatures (pyrolytic deposition temperature) are for well, and the growth temperature of mixed silanes, germane is low.With disilane, growth temperature range can be at 340～700 ℃ when germane was made source of the gas, 340～440 ℃ is good.The process conditions scope of growth GaAsP or GaAlAs in the GaAs substrate (gas phase thing when feeding arsine, trimethyl gallium, trimethyl aluminium): pyrolysis temperature is at 550～700 ℃.The extension superthin layer growth of silicon, when feeding silane, growth temperature is at 600～750 ℃.Use said method, can growth strain or do not have strained super lattice (lattice constant match is good, as GaAlAs:GaAs/GaAs).Modulation lattice material (polysilicon) heterojunction, Heterogeneous Composite functional material (Si/Ge
XSi
1-X/ Si quantum well).The character that this class material has not only on science meaning very big, many-sided practical potentiality are more arranged: as make high performance microelectronic component, microwave device, low-temperature and high-speed microelectronic component, nonlinear optics, photoelectricity and piezoelectric effect device.The inventive method has also developed new important means as a kind of method of low temperature silicon epitaxial growth sub-micron superthin layer to existing semiconductor technology method.
Utilize also may the grow specific function material of various modulated structures such as ferroelectric-semiconductor, superconductor-semiconductor (comprising high-temperature superconductor), metal-semiconductor and other structure of the inventive method.In addition, growth tens～hundreds of A ultra-thin silicon oxide layer is essential solution the on the very lagre scale integrated circuit (VLSIC) technology, utilize the inventive method can realize the quick growth of super thin oxide layer, and the quality of oxide layer is higher.Special equipment of the present invention also can be used for annealing except that can be used for various CVD growths, diffusion waits other purposes.
Measurement with the character of some materials of method and apparatus of the present invention growth provides in Fig. 5～Figure 10, proves that it is heterojunction or super crystal lattice material.
The inventive method and equipment complex multiple semiconductor process techniques: the reaction temperature of ultralow pressure gas phase pyrolysis reaction is lower, rate of change with source of the gas under quick lamp heating and the ultralow pressure is fast, heterogeneous sandwich and shorten circulation timei is beneficial to grow, super crystal lattice material is grown under condition of ultralow temperature, eliminated the autodoping effect of common CVD: growth rate is slower, can reach 1.4
/ second, near the growth rate of MBE, the ultralow pressure air-flow is even, can obtain the even sample of large tracts of land, and the ultralow pressure air velocity is fast, and conversion air-flow rapidly is to obtain precipitous interface.The inventive method and equipment have many advantages than MBE method and apparatus: as equipment is simple, the technology cost is low, plant maintenance is easy to use, the growth area can be bigger, and quality is even, and the adjustable scope of throughput rate is big, thereby high efficiency, be beneficial to the realization industrial production.Particularly by computer-controlled equipment, the ultra-thin lattice material of growth multilayer has more guaranteed quality and efficient.
The invention will be further described below in conjunction with accompanying drawing and by embodiment:
Fig. 1 is a growth apparatus structural representation of the present invention.
Fig. 2 is Ge
XSi
1-X/ Si structural representation and heating, constant temperature, cooling growth procedure schematic diagram.
Fig. 3 (a) and (b) are other two kinds of growth procedure figure, and L represents to turn on light, and T represents temperature, and source of the gas is A, B or silane (SiH on ordinate
4), germane (GeH
4).(a) expression constant temperature growth A
xB
1-x/ B program diagram (b) is alternating temperature growth A/A
xB
1-xProgram diagram.
Fig. 4 is a computer control growth procedure block diagram, the program of growth Fig. 3 (b).
Fig. 5 is the wide-angle x-ray diffraction spectra, illustrates that grown layer is a monocrystalline.
Fig. 6 is the x-ray small-angle diffraction spectrum, and diffraction structures at different levels have shown the superlattice good period.
Fig. 7 is an angle of elevation X-ray diffraction spectra, has shown multistage diffraction satellites, has embodied the periodicity of superlattice.
Fig. 8 is Raman(Raman) scattering spectra, illustrate that grown layer is a strained layer.Scattering peak (the 523cm of both visible substrate among the figure
-1), the silicon scattering peak (484cm in the visible again strained layer GeSi alloy
-1), 410cm
-1The diaphragm of the corresponding Ge-Si key in the peak at place, 293cm
-1The diaphragm of the corresponding Ge-Ge key in the peak at place.
Fig. 9 is the x-ray photoelectron spectroscopy (XPS) of germanium-silicon alloy grown layer, (a) sweeps figure entirely for XPS, (b) is the XPS of Si2P, (c) is Ge
2The XPS of P3/2 illustrates that grown layer is pure GeSi alloy.
Figure 10 is the high-resolution lattice fringe picture of epitaxial loayer and substrate interface for Si/Si interface dot matrix striped picture (photo), it show in the silicon substrate silicon crystal lattice fully extension enter in the grown layer, there is not disordered layer near interface, illustrate that we pass through the sputter before the sample grown is not produced damage, can remove natural oxidizing layer effectively, obtain atomically clean surfaces, realized the low temperature silicon epitaxial growth.
Figure 11 is the structured flowchart of computer (TP-801) control growing.
Figure 12 is a computer control lamp heating line block diagram.
Figure 13 is a computer control mass flow controller circuit block diagram.
Referring to Fig. 1, Figure 11～13, growth room 1 is 7 centimetres of quartz glass tubes of diameter, the iodine-tungsten lamp 2 that it is 1kw that outer shroud is put 15 rated power, reflector 3 is arranged behind the fluorescent tube, the growth room is built-in with specimen holder 4, and the specimen holder diameter is about 3cm, for materials such as stainless steel, graphite, quartz are made.Thermocouple 5 closely is housed, and also being provided with provides Ar
+The electrode 6 of sputter clean current potential, DC DC power supply 7 is as the dc sputtering power of sample, or offer electrode 6 by radio frequency sputtering generator 8, be connected with the external Dewar container for liquefied nitrogen of cold-trap 9(in the system), as the residual gas of the indoor not pyrolysis of congealing reaction, vacuum gauge 10 and pumped vacuum systems 11,12 for handling the combustion furnace of residual gas, and 13 for connecing the pumped vacuum systems mouth.V
1-V
16Be each valve.Each mass flow controller 16～20 each source of the gas of control (the five kinds of sources of the gas that only draw among the figure, argon gas also are one of them, only do to clean and use).Complete feasible more than five kinds.Thermocouple signal is transported to computer 21 by amplifying stage and analog to digital converter and is compared with design temperature control signal in the computer and promptly control the lamp heating power after digital-to-analogue conversion, current-voltage conversion inverter, pulse shaping and amplifying circuit remove to control controllable silicon trigger equipment 22, and 23 is the lamp heating power supply.The present invention adopts the KJ006 integrated trigger to make silicon controlled toggle.Temperature control curve of the present invention divides three sections: the section that 1, heats up, and programming rate can artificially be set, and the temperature according to growth room's thermocouple records adopts the full power heating in the section that heats up, so that make the growth room that the fastest programming rate be arranged; 2, soaking zone adopts PD algorithm per minute to calculate the heating power of growth room's lamp 3 times, thereby removes to control the silicon controlled angle of flow; 3, natural temperature descending section is closed light (when the slower rate of temperature fall of needs, also can keep the small light heating), can obtain the fastest cooling rate.In as the temperature of Fig. 2～Fig. 3, time-program(me) figure, the gas phase thing that necessary corresponding input is set, (Beijing is built middle Machines Plant and is produced by each mass flow controller of computer control, the D07-7A/2M type, manual function is also arranged, there are flow set and traffic figure to show on the instrument), carry out with electronic analog swtich 24 that (embodiment of the invention is the gating of five road gases to multichannel, mass flow controller converts flow to the signal of telecommunication and compares with set point, comes size that by-pass valve control opens with the control flow with this.Mix up the set point of each road gas earlier, when growing, computer is according to various grown layer desired gas kind and gas flow, opens the desired gas passage and closes other.The modulus conversion chip of 8 or 16-bit microcomputer and corresponding figure place is all available, but the obvious height of 16 precision how, the present invention adopt 8 single board computer TP-801 can reach ± 4 ℃ temperature-controlled precision, growth time control precision reaches 1/100 second, the gas flow control precision: ± 2%FS(full scale), can reach requirement.The further details of computer control temperature of the present invention and gas mass flow can be referring to Chen Yiwen, application master's degree thesis.In addition, manually control 25 and also can work alone, promptly each mass flow controller of gating is defeated by gas and the flow that the growth room needs, and growth temperature is selected by the lamp heating power, and the growth bed thickness is by lamp decision heating time.
Fig. 4 A and Figure 48 provide the flow chart of computer control growth N layer super crystal lattice material.
Following table is the binding energy of the sample of various different components.The consistency explanation alloy-layer of data is got the covalent bonding form.(seeing Table)
Vacuumize under the condition at the same time: begin to turn on light, warm-up time t
1; Sputter, time constant t
2(logical Ar); Annealing, time constant t
3; Buffer growth, time constant t
4; Superlattice growth cycle J is set: time-delay t turns on light
5, open certain source of the gas, this layer growth time constant t
6, lighting time and power by set control automatically in growth indoor temperature transmitter and the central controller (computer), close source of the gas, time-delay t
7, t turns off the light, delays time
8, be circulated to the N layer and finish; Protective layer growth, time constant t
9; Turn off the light, finish.Time-delay and calendar scheduling all adopt each subprogram.
Its complete course of work such as following: after in the growth room, host material being installed, logical V
3, close V
1, make system by forvacuum, close V thereafter again
3, logical V
1Cross cold-trap and vacuumize, indicate to 10 at vacuum gauge 10
-1Torr and with Ar stromal surface is carried out direct current sputtering when following and clean.Thereafter quantitatively feed the gas phase compound of institute's long material, after the lamp heating, promptly in the stromal surface deposit, deposition gases is not condensed in cold-trap, and repeating said process can the growing multiple layer film material, and whole growth process is closed V after finishing
1Pumped vacuum systems is removed Dewar container for liquefied nitrogen, and the residual gas that condenses in the cold-trap is burned by tube furnace, opens V in case of necessity
3The nitrogen that feeds certain pressure is washed out residual gas.Each embodiment is as follows:
One, growth Ge
xSi
1-x/ Si superlattice process conditions
Deposition temperature: 590 ℃ (during growth Si); 550 ℃ of (growth Ge
xSi
1-xThe time)
Operating pressure :～10
-3Torr
Source of the gas: SiH
4, GeH
4, Ar, N
2(being used for the protective layer growth).
Gas flow: 1～2ml/min(ml/min), (relevant) with the host material area
Deposition rate: 1.8
/ S(dust/second), Ar
+Sputter, 10
-1Torr, 5mA.
Two, the sub-micron epitaxial growth of silicon
Deposition temperature: 640 ℃
Operating pressure: 10
-2～10
-3Torr
Gas flow :～1ml/min(ml/min)
Source of the gas :～SiH
4, Ar, N
2
Deposition rate: 1.8
/ S(dust/second), Ar
+Penetrate sputter, 10
-1Torr; 5mA.
Three, growth Ge
xSi
1-x: the Si/Si superlattice
Deposition temperature: 360 ℃～380 ℃, best 360 ℃
Reacting gas source: Si
2H
6, GeH
4
Deposition rate: minimumly reach 1.5
/ second
Gas flow: 1-2ml/ divides work pressure :～10
-3Torr
Ar
+Sputter: 10
-1Torr, 5mA.
Four, growth Ge:Si/Ge
xSi
1-x/ Si superlattice
Deposition temperature: 360 ℃～460 ℃, best 360 ℃
Reacting gas source: Si
2H
6, GeH
4
Deposition rate: minimumly reach 1.8
/ second
Gas flow: 1-2ml/ divides work pressure :～10
-3Torr
Ar
+Sputter: 10
-1Torr, 5mA
Resilient coating (Ge
xSi
1-x) thickness: 2～5 μ m
Five, growth GaAlAs:GaAs/GaAs superlattice
Deposition temperature: 550～700 ℃, best 560 ℃
Reacting gas source: trimethyl gallium (TMG), trimethyl aluminium (TMA), (above carry), arsine AsH by hydrogen
3
Deposition rate: minimumly reach 1.5
/ second
Gas flow: 1-2ml/ divides work pressure :～10
-3Torr
Ar
+Sputter: 10
-1Torr, 5mA.
Six, growth GeAs/GaAlAs/GaAs quantum well
Deposition temperature: 550～700 ℃, best 560 ℃
Reacting gas source: trimethyl gallium (TMG), trimethyl aluminium (TMA), (above carry), arsine AsH by hydrogen
3
Deposition rate: minimumly reach 1.5
/ second
Gas flow: 1-2ml/ divides work pressure :～10
-3Torr
Ar
+Sputter: 10
-1Torr, 5mA
Seven, growth Ge
xSi
1-x: the Ge/Ge superlattice
Deposition temperature: 550～650 ℃, best 600 ℃
Reacting gas source: GeH
4, SiH
4
Deposition rate:＞1.8
/ second
Gas flow: 1-2ml/ divides work pressure :～10
-3Torr
Ar
+Sputter: 10
-1Torr, 5mA
Eight, growing polycrystalline silicon/amorphous silicon multilayer modulated structure material
Deposition temperature: 300 ℃～550 ℃
Reacting gas source: SiH
4
Gas flow: polycrystalline growth 1-2ml/ branch, amorphous growth 8-10ml/ branch
Operating pressure: 10
-1Torr～10
-3Torr
Plasma strengthens: use during amorphous growth.
Nine, growth Si/Ge
xSi
1-xThe most sub-trap material of/Si strained layer
Deposition temperature: 550～650 ℃, best 600 ℃
Reacting gas source: GeH
4, SiH
4
Deposition rate:＞1.8
/ second
Gas flow: 1-2ml/ divides work pressure :～10
-3Torr
Ar
+In-situ sputtering: 10
-1Torr, 5mA
Ten, the low-temperature epitaxy of P type sub-micron silicon thin film
Deposition temperature: 550～650 ℃, best 600 ℃
Reacting gas source: SiH
4, B
2H
6
Deposition rate:＞1.8A/ second
Gas flow: 1-2ml/ divides work pressure :～10
-3Torr
Ar
+In-situ sputtering: 10
-1Torr, 5mA
11, growth Ge
xSi
1-x: Si/Ge
YSi
1-y/ Si superlattice
Deposition temperature: 550～650 ℃, best 600 ℃
Reacting gas source: GeH
4, SiH
4
Deposition rate:＞1.8
/ second
Gas flow: 1-2ml/ divides work pressure :～10
-3Torr
Ar
+In-situ sputtering: 10
-1Torr, 5mA
Buffer layer thickness: 2～5 μ m
Growth pattern: constant temperature
12, the GaAs ion injects the transient annealing of sheet
Annealing temperature: 970 ℃
Annealing time: 40S
Protective atmosphere: Ar
Activity ratio:＞90%
13, the heterogeneous low-temperature epitaxy of silicon on the germanium substrate
Deposition temperature: 550～650 ℃, best 600 ℃
Reacting gas source: SiH
4
Deposition rate:＞1.8
/ second
Gas flow: 1-2ml/ divides work pressure :～10
-3Torr
Ar
+In-situ sputtering: 10
-1Torr, 5mA
14, the heteroepitaxial growth of germanium-silicon alloy on the silicon substrate
Deposition temperature: 550～650 ℃, best 600 ℃
Reacting gas source: SiH
4, GeH
4
Deposition rate:＞1.8
/ second
Gas flow: 1-2ml/ divides work pressure :～10
-3Torr
Ar
+In-situ sputtering: 10
-1Torr, 5mA
15, grow ultra-thin thermal oxide layer on the silicon chip
Growth temperature: 900～1200 ℃, best 1150 ℃
Growth time: 5 seconds～120 seconds
Growth bed thickness: 20A～300A
Growth atmosphere: dried oxygen
Oxygen flow: 1l/ branch
Oxide layer breakdown field intensity: 5 * 10
6V/cm.
According to detailed description above, the more further implication of applicability of the present invention seems more clear.Finding out easily, in the design of invention and various improvement and the variation in the scope, all is conspicuous for the those of skill in the art in this field.
Sample Si 2P Ge 2P
3/2（OR Ge 3D）
＊
Ge
0.16Si
0.8499.32（ev） 1217.42（ev）
Ge
0.30Si
0.7099.55 29.55
＊
Ge
0.35Si
0.6599.65 29.55
＊
Ge
0.42Si
0.5899.45 1217.65
Ge
0.52Si
0.4899.65 1217.55
Ge
0.70Si
0.3099.65 1217.55
Ge
0.78Si
0.2299.65 1217.65
Claims (9)
1, a kind of method that on semiconducting matrix material, obtains the atom level lattice material, indoor in a growth, inject gas phase material, it is characterized in that adopting the lamp heating to make gas phase material at the substrate surface reactive deposition, the reactive deposition temperature is in the gas phase material pyrolysis temperature or other is more than critical reaction temperature, the growth room has transparency window or the bright growth room of full impregnated, and the lamp heating power makes the host material heating rate reach 70～300 ℃/second, and 10
-2The vacuum condition growth down that Torr is following.
2,, it is characterized in that the repetition said method is in order to obtain multilayer homogeneity or heterogeneous super crystal lattice material by the described method of claim 1.
3,, it is characterized in that with inert gas direct current or ac plasma sputter clean being carried out in semiconducting matrix material surface in the growth room earlier by claim 1 or 2 described methods.
4, by claim 1,2 described methods, it is characterized in that growth temperature is controlled at the gas phase material pyrolysis temperature or more than the critical reaction temperature near warm area, as growth Ge
XSi
1-X/ Si heterojunction or super crystal lattice material, with silane, deposition temperature was 550～700 ℃ when germane was source of the gas, disilane, deposition temperature was 340～450 ℃ when germane was source of the gas, growth GaAlAs:GaAs/GaAs heterojunction or super crystal lattice material, with trimethyl gallium, arsine, deposition temperature was 550～700 ℃ when phosphine was source of the gas, during silicon place epitaxial growth sub-micron superthin layer, the silane deposition temperature is 600～750 ℃, grow ultra-thin thermal oxide layer on the silicon chip, growth temperature are got 900～1200 ℃.
5, by the method for claim 2 or 4, when growth N layer super crystal lattice material, vacuumize at the same time under the condition, can control corresponding lamp heating-up temperature by central authorities, mass flow controller is grown with following program: begin to turn on light, preheating, time constant t
1; Sputter, time constant t
2; Annealing, time constant t
3; Buffer growth, time constant t
4; Superlattice growth cycle J is set; Time-delay t turns on light
3, open certain source of the gas, this layer growth time constant t
6, lighting time and power controls, closes source of the gas, time-delay t automatically by the design temperature of growth indoor temperature transmitter and central controller
7, t turns off the light, delays time
8, be circulated to the N layer and finish; Protective layer growth, time constant t
9; Turn off the light, finish.
6, a kind of equipment of the atom level lattice material of on semiconducting matrix material, growing, comprise transparent reaction chamber, the vacuum system of coupled reaction chamber, valve, source of the gas, ring is put light source around it is characterized in that in the sample room, the growth room is built-in with temperature sensor, and valve comprises mass flow controller (electromagnetically operated valve) and hand stop valve.
7, by the described equipment of claim 6, it is characterized in that reative cell is that quartz glass is made, ring is equipped with 5～25 tungsten halogen lamps, and the sample room is connected with cold-trap.
8, by claim 6 or 7 described equipment, the direct current sputtering that it is characterized in that being provided with 500～2500V cleans the power supply and the electrode of host material.
9, by claim 7 or 8 described equipment, it is characterized in that being provided with central controller and connect temperature sensor, the lamp heating system, mass flow controller, after temperature control signals be set compare in control and the middle control during temperature sensor signal being transported to by amplifying stage and analog-to-digital conversion again through digital-to-analogue conversion, the current-voltage conversion inverter, pulse shaping and amplifying circuit go to control SCR rectification circuit and promptly control the lamp heating power, mass flow controller converts flow to the signal of telecommunication and compares with set point,, grow with the control flow with this size of coming the by-pass valve control unlatching to reach by the program of claim 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN90105603.0A CN1024236C (en) | 1990-01-10 | 1990-01-10 | Method for obtaining heterojunction semiconductor and super crystal lattice materials and equipments thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN90105603.0A CN1024236C (en) | 1990-01-10 | 1990-01-10 | Method for obtaining heterojunction semiconductor and super crystal lattice materials and equipments thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1053511A CN1053511A (en) | 1991-07-31 |
| CN1024236C true CN1024236C (en) | 1994-04-13 |
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ID=4879413
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN90105603.0A Expired - Fee Related CN1024236C (en) | 1990-01-10 | 1990-01-10 | Method for obtaining heterojunction semiconductor and super crystal lattice materials and equipments thereof |
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| Country | Link |
|---|---|
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| CN100404206C (en) * | 2005-12-08 | 2008-07-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for dismounting-mounting semiconductor vacuum-pumping equipment |
| CN102401840A (en) * | 2011-11-14 | 2012-04-04 | 中北大学 | Si based HEMT embedded micro accelerator and production method thereof |
| CN102425946B (en) * | 2011-11-30 | 2014-04-09 | 中国科学院地质与地球物理研究所 | Vacuum focusing furnace device for inert gas diffusion experiment |
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1990
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