CN102420169A - Double-Damascus process of super-thick top-layer metal by virtue of filling sacrifice material in through hole - Google Patents
Double-Damascus process of super-thick top-layer metal by virtue of filling sacrifice material in through hole Download PDFInfo
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- CN102420169A CN102420169A CN2011101236446A CN201110123644A CN102420169A CN 102420169 A CN102420169 A CN 102420169A CN 2011101236446 A CN2011101236446 A CN 2011101236446A CN 201110123644 A CN201110123644 A CN 201110123644A CN 102420169 A CN102420169 A CN 102420169A
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Abstract
The invention discloses a double-Damascus process of super-thick top-layer metal by virtue of filling a sacrifice material in a through hole, in order to solve the problems that the control of high aspect ratio of through hole etching and the control of the size of a through hole can not be achieved on the premises that process steps are not increased and the process cycle is not increased in the prior art. According to the invention, a method, in which the sacrifice material which is easy to ash and remove in the trench etching process is filled in the through hole manufactured firstly, is used, thereby achieving the double-Damascus manufacturing process of the super-thick top-layer metal. The process provided by the invention has the technical effects of being good for process control, reducing process steps and shortening production period.
Description
Technical field
The present invention relates to a kind of dual damascene manufacturing process of ultra thick top-level metallic, relate in particular to the ultra thick top-level metallic dual damascene process that a kind of through hole is filled expendable material.
Background technology
For the manufacturing of ultra thick top-level metallic, the industry common method is to do top layer through hole and ultra thick top-level metallic respectively with single Damascus technics at present.But this can increase manufacturing technology steps, extends manufacture cycle.
Processing step of the prior art is: the dielectric layer deposit, wherein, dielectric barrier layer: SIN, dielectric layer: SiO2; The spin coating photoresist, photoetching forms via hole image; The dry etching through hole, photoresist is removed in ashing; Depositing metal barrier layer (TaN/Ta) and copper seed layer; Through hole is filled up in electro-coppering; Cmp (CMP) is removed excess metal; On through hole, the dielectric layer deposit, wherein, dielectric barrier layer: SIN, dielectric layer: SiO2; The spin coating photoresist, photoetching forms groove figure; The dry etching groove, photoresist is removed in ashing; Depositing metal barrier layer (TaN/Ta) and copper seed layer; Groove is filled up in electro-coppering; Cmp (CMP) is removed excess metal.
Use the dual damascene manufacturing process can reduce processing step, shorten the production cycle.Yet dual damascene process commonly used can run into the problem that can't overcome in ultra thick top-level metallic manufacturing:
For the manufacturing of ultra thick top-level metallic, if use traditional first through hole (Via) back groove (Trench) dual damascene manufacturing process, usually gash depth reach 3um or more than, the depth-to-width ratio of through hole surpasses 10:1, present etching technics is difficult to realize.
Another kind method is with groove dual damascene manufacturing process (patent: US7297629) after the first partial through holes.This can solve the problem of first through-hole approaches via etch high-aspect-ratio, but this method is difficult to the control clear size of opening.
In order to solve the problem of technology controlling and process difficulty in the ultra thick top-level metallic dual damascene manufacturing, fill the dual damascene process that is easy to the expendable material that ashing is removed in the etching groove process in the through hole that priority of use of the present invention is made.
Summary of the invention
The invention discloses a kind of through hole and fill the ultra thick top-level metallic dual damascene process of expendable material, in order to solve the problem that can't be issued to control via etch high-aspect-ratio and clear size of opening control in the prior art in the prerequisite that does not increase processing step, prolongation process cycle.
Above-mentioned purpose of the present invention realizes through following technical scheme:
A kind of through hole is filled the ultra thick top-level metallic dual damascene process of expendable material, wherein, and deposit one first dielectric barrier layer, one first dielectric layer successively on the completed anterior layer metal level of matrix; The spin coating photoresist, and photoetching forms via hole image; Form through hole through being dry-etched in first dielectric layer, part first dielectric barrier layer is etched, and makes said through hole terminate in said first dielectric barrier layer, and removes remaining photoresist; Spin coating expendable material filling vias; Remove the outer expendable material of through hole; Deposit second dielectric layer; Spin coating photoresist on second dielectric layer, photoetching forms groove figure; Form groove through dry etching; Remove the expendable material in residual photoresistance and the through hole; Carry out dry etching, touch the anterior layer metal level of its bottom with first dielectric barrier layer of opening via bottoms until through hole; Depositing metal barrier layer and copper seed layer; Through hole and groove are filled up in electro-coppering; Carry out the cmp flatening process, to remove excess metal.
Aforesaid through hole is filled the ultra thick top-level metallic dual damascene process of expendable material, and wherein, the groove that forms through dry etching terminates in said first dielectric layer.
Aforesaid through hole is filled the ultra thick top-level metallic dual damascene process of expendable material, wherein, accomplish the deposit of said first dielectric layer after, deposit one second dielectric barrier layer on said first dielectric layer.
Aforesaid through hole is filled the ultra thick top-level metallic dual damascene process of expendable material, and wherein, what said expendable material adopted is the material that filling capacity is good, high temperature resistant, stable by force, be easy to remove.
Aforesaid through hole is filled the ultra thick top-level metallic dual damascene process of expendable material, and wherein, said expendable material adopts polyimides.
Aforesaid through hole is filled the ultra thick top-level metallic dual damascene process of expendable material, wherein, and through using oxygen containing plasma etching to remove the outer expendable material of through hole.
Aforesaid through hole is filled the ultra thick top-level metallic dual damascene process of expendable material, wherein, adopts cmp to remove the outer expendable material of through hole.
Aforesaid through hole is filled the ultra thick top-level metallic dual damascene process of expendable material, wherein, through the chemical vapor deposition Si oxide to form said first dielectric layer and said second dielectric layer.
Aforesaid through hole is filled the ultra thick top-level metallic dual damascene process of expendable material; Wherein, Form said first dielectric barrier layer and said second dielectric barrier layer through chemical vapor deposition method, deposit forms the material of said first dielectric barrier layer and said second dielectric barrier layer and from SiN, SiC, SiCN, chooses.
Aforesaid through hole is filled the ultra thick top-level metallic dual damascene process of expendable material, and wherein, the thickness of said second dielectric layer is more than or equal to 3 microns.
Aforesaid through hole is filled the ultra thick top-level metallic dual damascene process of expendable material, wherein, carries out plasma etching, to remove the expendable material in residual photoresistance and the through hole.
Aforesaid through hole is filled the ultra thick top-level metallic dual damascene process of expendable material, wherein, adopts oxygen containing plasma etch process, to remove the expendable material in the through hole.
Aforesaid through hole is filled the ultra thick top-level metallic dual damascene process of expendable material, wherein, and through said expendable material is selected to remove the expendable material in the through hole than high wet etching.
Aforesaid through hole is filled the ultra thick top-level metallic dual damascene process of expendable material, and wherein, through being dry-etched in second dielectric barrier layer, first dielectric layer formation through hole, part first dielectric barrier layer is etched.
Aforesaid through hole is filled the ultra thick top-level metallic dual damascene process of expendable material, and wherein, the material of said anterior layer metal level is a copper.
In sum; Owing to adopted technique scheme; The ultra thick top-level metallic dual damascene process that through hole of the present invention is filled expendable material has solved the problem that can't be issued to control via etch high-aspect-ratio and clear size of opening control in the prior art in the prerequisite that does not increase processing step, prolongation process cycle; Fill the method that is easy to the expendable material that ashing is removed in the etching groove process in the through hole that priority of use of the present invention is made, realize ultra thick top-level metallic dual damascene manufacturing process, the present invention has the technology controlling and process of helping; Reduce processing step, shorten the technique effect of production cycle.
Description of drawings
Fig. 1 ~ Figure 12 is the block diagram that through hole of the present invention is filled the ultra thick top-level metallic dual damascene process of expendable material.
Embodiment
Be further described below in conjunction with the accompanying drawing specific embodiments of the invention:
Fig. 1 ~ Figure 12 is the block diagram that through hole of the present invention is filled the ultra thick top-level metallic dual damascene process of expendable material, sees also Fig. 1 ~ Figure 12, and a kind of through hole is filled the ultra thick top-level metallic dual damascene process of expendable material, wherein,
See also Fig. 1; Deposit one first dielectric barrier layer 201, one first dielectric layer 301 successively on matrix 101 completed anterior layer metal levels 102; And after the deposit of accomplishing said first dielectric layer 301, deposit one second dielectric barrier layer 202 on said first dielectric layer 301;
See also Fig. 2, spin coating photoresist on second dielectric barrier layer 202, and photoetching forms via hole image;
See also Fig. 3, form through hole, make said through hole terminate in said first dielectric barrier layer 201, and remove remaining photoresist through dry etching;
See also Fig. 4; Spin coating expendable material 401 filling vias; And expendable material 401 handled (Cure), in the process of spin coating expendable material 401, the expendable material 401 that has part covers on second dielectric barrier layer 202; The expendable material 401 of this part can influence follow-up technology, so need in follow-up processing step, remove;
See also Fig. 5, remove the outer expendable material 401 of through hole, but need the expendable material in the through hole 401 be kept;
See also Fig. 6, deposit second dielectric layer 302 is for the generation of follow-up groove is got ready;
See also Fig. 7, spin coating photoresist on second dielectric layer 302, photoetching forms groove figure;
See also Fig. 8, form groove through dry etching, the bottom of groove terminates in second dielectric barrier layer 202;
See also Fig. 9, remove remaining expendable material 401 in residual photoresistance and the through hole;
See also Figure 10, carry out dry etching,, touch the anterior layer metal level 102 of its bottom until through hole to open first dielectric barrier layer 201 of via bottoms;
See also Figure 11, depositing metal barrier layer and copper seed layer 501, wherein the material of metal barrier employing is TaN/Ta; Through hole and groove are filled up in electro-coppering;
See also Figure 12, carry out the cmp flatening process, to remove excess metal.
In the manufacture process of ultra thick top-level metallic,, simple, with short production cycle with respect to traditional single Damascus technics explained hereafter step disclosed by the invention through size and the high-aspect-ratio of through hole of through hole that adopted above-mentioned processing step better controlled.
Second dielectric barrier layer 202 among the present invention can be removed; Promptly in the deposition process of substrate, remove the step of deposit second dielectric barrier layer 202; Remove in the production technology behind second dielectric barrier layer 202; The groove that forms through dry etching terminates in said first dielectric layer 301, for the trench etch process of not adding second dielectric barrier layer 202, preferably chooses the etching technics that first dielectric layer, 301 etch rates is not more than expendable material 401.
What the said expendable material 401 among the present invention adopted is the material that filling capacity is good, high temperature resistant, stable by force, be easy to remove, so that the pattern of expendable material 401 removal back through holes is even more ideal, and in the etching groove process, is easy to remove.
Said expendable material 401 employing polyimides among the present invention (PI, ployimide).
Can be among the present invention through using oxygen containing plasma etching to remove the outer expendable material 401 of through hole.
Further, also can adopt cmp to remove the outer expendable material 401 of through hole among the present invention.
Among the present invention through the chemical vapor deposition Si oxide to form said first dielectric layer 301 and said second dielectric layer 302, said Si oxide can adopt USG, also can adopt FSG.
Form said first dielectric barrier layer 201 and said second dielectric barrier layer 202 through chemical vapor deposition method among the present invention, deposit forms the material of said first dielectric barrier layer 201 and said second dielectric barrier layer 202 and from SiN, SiC, SiCN, chooses.
The thickness of said second dielectric layer 302 among the present invention is more than or equal to 3 microns.
Can be among the present invention through carrying out plasma etching, to remove the expendable material 401 in residual photoresistance and the through hole.
Further, also can adopt oxygen containing plasma etch process among the present invention, to remove the expendable material 401 in the through hole.
Pass through among the present invention said expendable material 401 is selected to remove the expendable material 401 in the through hole than high wet etching.
Through hole among the present invention and trench etch process are not limited in Fig. 1 ~ technological process shown in Figure 12, and the present invention can also realize through alternate manner, like metal hard mask technologies such as (MHM).
The material of the said anterior layer metal level 102 among the present invention is a copper.
In sum; Owing to adopted technique scheme; The ultra thick top-level metallic dual damascene process that through hole of the present invention is filled expendable material has solved the problem that can't be issued to control via etch high-aspect-ratio and clear size of opening control in the prior art in the prerequisite that does not increase processing step, prolongation process cycle; Fill the method that is easy to the expendable material that ashing is removed in the etching groove process in the through hole that priority of use of the present invention is made, realize ultra thick top-level metallic dual damascene manufacturing process, the present invention has the technology controlling and process of helping; Reduce processing step, shorten the technique effect of production cycle.
More than specific embodiment of the present invention is described in detail, but it is just as example, the present invention is not restricted to the specific embodiment of above description.To those skilled in the art, any equivalent modifications that the present invention is carried out with substitute also all among category of the present invention.Therefore, not breaking away from impartial conversion and the modification of being done under the spirit and scope of the present invention, all should contain within the scope of the invention.
Claims (15)
1. a through hole is filled the ultra thick top-level metallic dual damascene process of expendable material, it is characterized in that deposit one first dielectric barrier layer, one first dielectric layer successively on the completed anterior layer metal level of matrix; The spin coating photoresist, and photoetching forms via hole image; Form through hole through being dry-etched in first dielectric layer, part first dielectric barrier layer is etched, and makes said through hole terminate in said first dielectric barrier layer, and removes remaining photoresist; Spin coating expendable material filling vias; Remove the outer expendable material of through hole; Deposit second dielectric layer; Spin coating photoresist on second dielectric layer, photoetching forms groove figure; Form groove through dry etching; Remove the expendable material in residual photoresistance and the through hole; Carry out dry etching, touch the anterior layer metal level of its bottom with first dielectric barrier layer of opening via bottoms until through hole; Depositing metal barrier layer and copper seed layer; Through hole and groove are filled up in electro-coppering; Carry out the cmp flatening process, to remove excess metal.
2. through hole according to claim 1 is filled the ultra thick top-level metallic dual damascene process of expendable material, it is characterized in that, the groove that forms through dry etching terminates in said first dielectric layer.
3. through hole according to claim 1 is filled the ultra thick top-level metallic dual damascene process of expendable material, it is characterized in that, accomplish the deposit of said first dielectric layer after, deposit one second dielectric barrier layer on said first dielectric layer.
4. through hole according to claim 1 is filled the ultra thick top-level metallic dual damascene process of expendable material, it is characterized in that, what said expendable material adopted is the material that filling capacity is good, high temperature resistant, stable by force, be easy to remove.
5. according to the ultra thick top-level metallic dual damascene process of claim 1 or 4 described through holes filling expendable materials, it is characterized in that said expendable material adopts polyimides.
6. through hole according to claim 1 is filled the ultra thick top-level metallic dual damascene process of expendable material, it is characterized in that, through using oxygen containing plasma etching to remove the outer expendable material of through hole.
7. through hole according to claim 1 is filled the ultra thick top-level metallic dual damascene process of expendable material, it is characterized in that, adopts cmp to remove the outer expendable material of through hole.
8. through hole according to claim 1 is filled the ultra thick top-level metallic dual damascene process of expendable material, it is characterized in that, through the chemical vapor deposition Si oxide to form said first dielectric layer and said second dielectric layer.
9. through hole according to claim 3 is filled the ultra thick top-level metallic dual damascene process of expendable material; It is characterized in that; Form said first dielectric barrier layer and said second dielectric barrier layer through chemical vapor deposition method, deposit forms the material of said first dielectric barrier layer and said second dielectric barrier layer and from SiN, SiC, SiCN, chooses.
10. through hole according to claim 1 is filled the ultra thick top-level metallic dual damascene process of expendable material, it is characterized in that the thickness of said second dielectric layer is more than or equal to 3 microns.
11. through hole according to claim 1 is filled the ultra thick top-level metallic dual damascene process of expendable material, it is characterized in that, carries out plasma etching, to remove the expendable material in residual photoresistance and the through hole.
12. through hole according to claim 11 is filled the ultra thick top-level metallic dual damascene process of expendable material, it is characterized in that, adopts oxygen containing plasma etch process, to remove the expendable material in the through hole.
13. through hole according to claim 11 is filled the ultra thick top-level metallic dual damascene process of expendable material, it is characterized in that, through said expendable material is selected to remove the expendable material in the through hole than high wet etching.
14. through hole according to claim 3 is filled the ultra thick top-level metallic dual damascene process of expendable material, it is characterized in that, through being dry-etched in second dielectric barrier layer, first dielectric layer formation through hole, part first dielectric barrier layer is etched.
15. through hole according to claim 1 is filled the ultra thick top-level metallic dual damascene process of expendable material, it is characterized in that the material of said anterior layer metal level is a copper.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101236446A CN102420169A (en) | 2011-05-13 | 2011-05-13 | Double-Damascus process of super-thick top-layer metal by virtue of filling sacrifice material in through hole |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011101236446A CN102420169A (en) | 2011-05-13 | 2011-05-13 | Double-Damascus process of super-thick top-layer metal by virtue of filling sacrifice material in through hole |
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| CN102420169A true CN102420169A (en) | 2012-04-18 |
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| CN2011101236446A Pending CN102420169A (en) | 2011-05-13 | 2011-05-13 | Double-Damascus process of super-thick top-layer metal by virtue of filling sacrifice material in through hole |
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| CN105185738A (en) * | 2014-06-20 | 2015-12-23 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device, preparation method and electronic device |
| CN108470714A (en) * | 2018-03-29 | 2018-08-31 | 上海华力集成电路制造有限公司 | Dual damascene process method |
| CN110504210A (en) * | 2019-08-26 | 2019-11-26 | 上海华力集成电路制造有限公司 | The manufacturing process of copper wiring technique |
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Application publication date: 20120418 |