CN102412242B - Light-emitting diode (LED) chipset capable of being connected to alternating current directly - Google Patents
Light-emitting diode (LED) chipset capable of being connected to alternating current directly Download PDFInfo
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- CN102412242B CN102412242B CN 201110375793 CN201110375793A CN102412242B CN 102412242 B CN102412242 B CN 102412242B CN 201110375793 CN201110375793 CN 201110375793 CN 201110375793 A CN201110375793 A CN 201110375793A CN 102412242 B CN102412242 B CN 102412242B
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Abstract
The invention relates to a light-emitting diode (LED) chipset capable of being directly connected to alternating current directly. The LED chipset at least comprises two integration resistor light-emitting diode chips which are connected in parallel with alternating current positive and negative electrodes; each integration resistor light-emitting diode chip comprises a first semiconductor resistor and a second semiconductor resistor; a plurality of light-emitting diodes are connected in series between the first semiconductor resistor and the second semiconductor resistor; and the two integration resistor light-emitting diode chips alternately emit light under the action of the alternating current according to the forward conduction principle of the diode. The two integration resistor light-emitting diode chips are connected in parallel and orientations of PN junctions of the plurality of the light-emitting diodes of the two integration resistor light-emitting diode chips are opposite to each other, one integration resistor light-emitting diode chip works in the positive semi-cycle of the alternating current and the other integration resistor light-emitting diode chip works in the negative semi-cycle of the alternating current, so that the LED chipset can always work under the alternating current.
Description
Technical field
The present invention relates to a kind of light-emitting diode chip for backlight unit, especially relate to a kind of led chip group that can directly be connected on the alternating current.
Background technology
Light-emitting diode chip for backlight unit is the core component of LED lamp, the P-N knot that namely refers to.Its major function is: be electric energy conversion luminous energy, the main material of chip is monocrystalline silicon.Semiconductor wafer is comprised of two parts, and a part is P type semiconductor, occupies an leading position in its hole, the inside, and the other end is N type semiconductor, mainly is electronics here.But when these two kinds of semiconductors couple together, just form a P-N knot between them.When electric current acted on this wafer by wire, electronics will be pushed to the P district, and then electronics will send energy with the form of photon, the luminous principle of LED that Here it is with hole-recombination in the P district.And the light wavelength color of light namely is to be determined by the material that forms the P-N knot.
The P-N of light-emitting diode chip for backlight unit knot has unilateral conduction: i.e. forward conduction, oppositely not conducting.To the reddish yellow light-emitting diode, its forward conduction voltage is about 2 volts, and to the blue green light diode, forward conduction voltage is about 3.0 volts.After the forward voltage of diode is higher than conducting voltage, the electric current that flows through diode will increase sharply along with the increase of applied voltage; When the electric current that flows through diode is excessive, may be burnt because the heat that diode itself produces is excessive.At present, the operating current of general 1 light blue optical diode is about 350 milliamperes, and corresponding operating voltage is much smaller than 4 volts.Obviously, general diode is because its unidirectional general character and lower operating voltage restriction.This shows, all light-emitting diode chip for backlight unit use all needs extra rectification circuit and the external resistor that arranges to be used in conjunction with, thereby can increase the complexity of light fixture production cost and circuit connection.
In addition, existing led chip can't connect use in succession with alternating current direct, needs to increase extra facility.
Summary of the invention
The present invention has designed a kind of led chip group that can directly be connected on the alternating current, the technical problem of its solution be (1) existing led chip group can't be directly and alternating current directly use; (2) existing light-emitting diode chip for backlight unit need to be used in conjunction with special rectification circuit and external resistor, can increase the complexity that light fixture production cost and circuit connect.
In order to solve the technical problem of above-mentioned existence, the present invention has adopted following scheme:
A kind of led chip group that can directly be connected on the alternating current, at least comprise two pieces of integrated resistor light-emitting diode chip for backlight unit, described two pieces of integrated resistor light-emitting diode chip for backlight unit are connected in parallel on the alternating current both positive and negative polarity, each piece integrated resistor light-emitting diode chip for backlight unit comprises the first semiconductor resistor (R1) and the second semiconductor resistor (R2), between described the first semiconductor resistor (R1) and described the second semiconductor resistor (R2), be in series with a plurality of light-emitting diode (L1, L2, L3), described a plurality of light-emitting diode (L1, L2, L3) PN junction moves towards identical, and is alternately luminous under the alternating current effect according to two pieces of integrated resistor light-emitting diode chip for backlight unit of diode forward conducting principle.
Further, first semiconductor resistor (R1) of one piece of integrated resistor light-emitting diode chip for backlight unit be connected the link of the second semiconductor resistor (R2) of piece integrated resistor light-emitting diode chip for backlight unit and directly be connected with the alternating current negative or positive electrode.
Further, limiting layer (4), active area structure (5), P type are distinguished limiting layer (6), P type layer (7), P type ohmic contact layer (8) and P type metal ohmic contact layer (9) and are combined from the bottom to top respectively by independently resilient coating (2), N-type layer (3), N-type respectively except sharing a substrate (1) layer for described the first semiconductor resistor (R1), described the second semiconductor resistor (R2) and described a plurality of light-emitting diode; Adjacent two light-emitting diodes are connected with P type metal ohmic contact layer (9) electrode by N-type layer (3) electrode realizes series connection; Described the first semiconductor resistor (R1) and described the second semiconductor resistor (R2) all are provided with respectively two contact electrodes, a contact electrode of described the first semiconductor resistor (R1) or described the second semiconductor resistor (R2) is connected with the negative or positive electrode of power supply, and the another one contact electrode is connected with N-type layer (3) or the P type metal ohmic contact layer (9) of adjacent light-emitting diode.
Further, the appearance of described the first semiconductor resistor (R1), described the second semiconductor resistor (R2) and a plurality of light-emitting diodes is all wrapped up one deck dielectric insulating film (13), but the separately dielectric insulating film (13) of two contact electrode tops of P type metal ohmic contact layer (9) electrode of N-type layer (3) electrode of a plurality of light-emitting diodes, a plurality of light-emitting diodes and described the first semiconductor resistor (R1) and described the second semiconductor resistor (R2) is all removed.
Further, the P type metal ohmic contact layer (9) of described the first semiconductor resistor (R1) is separated into two contact electrodes by P type metal ohmic contact layer the first isolation breach (17).
Further, described the second semiconductor resistor (R2) P type metal ohmic contact layer (9) is separated into two contact electrodes by P type metal ohmic contact layer the second isolation breach (18).
Further, described light-emitting diode is three: the first light-emitting diode (L1), the second light-emitting diode (L2) and the 3rd light-emitting diode (L3); Wherein, P type metal ohmic contact layer (9) electrode of the first light-emitting diode (L1) is connected with the right side contact electrode of the first semiconductor resistor (R1) by PP junction electrode connection metal layer (162), and N-type layer (3) electrode of the first light-emitting diode (L1) is connected with P type metal ohmic contact layer (9) electrode of the second light-emitting diode (L2) by the first PN junction electrode connection metal layer (163); N-type layer (3) electrode of the second light-emitting diode (L2) is connected with P type metal ohmic contact layer (9) electrode of the 3rd light-emitting diode (L3) by the second PN junction electrode connection metal layer (164); N-type layer (3) electrode of the 3rd light-emitting diode (L3) is connected with the left side contact electrode of the second semiconductor resistor (R2) by the 3rd PN junction electrode connection metal layer (165).
Further, the thickness of described dielectric insulating film (13) is between 150nm-450nm.
Further, the material of described substrate (1) is sapphire, carborundum or GaN.
This led chip group that can directly be connected on the alternating current is compared with traditional method for manufacturing light-emitting diode chip, has following beneficial effect:
(1) the present invention is owing to two integrated resistor light-emitting diode chip for backlight unit being connected in parallel and moving towards opposite so that both a plurality of LED P N tie, one piece of integrated resistor light-emitting diode chip for backlight unit is in the positive half cycle work of alternating current, another piece integrated resistor light-emitting diode chip for backlight unit is in the negative half period work of alternating current, and realization led chip group can be worked under alternating current always.
(2) the inventive method can be made into light-emitting diode chip for backlight unit a plurality of light-emitting diodes and semiconductor resistor, this semiconductor resistor directly is integrated in the light-emitting diode chip for backlight unit, thereby no longer need to be used in conjunction with special rectification circuit and external resistor, greatly reduce the complexity that lighting production cost and circuit connect.
Description of drawings
Figure 01: light-emitting diode bare chip structural representation among the present invention;
Figure 02: integrated resistor light-emitting diode chip for backlight unit making step 1 structural representation of the present invention;
Figure 03: integrated resistor light-emitting diode chip for backlight unit making step 2 structural representations of the present invention;
Figure 04: integrated resistor light-emitting diode chip for backlight unit making step 3 structural representations of the present invention;
Figure 05: integrated resistor light-emitting diode chip for backlight unit making step 4 structural representations of the present invention;
Figure 06: integrated resistor light-emitting diode chip for backlight unit making step 5 structural representations of the present invention;
Figure 07: integrated resistor light-emitting diode chip for backlight unit making step 6 structural representations of the present invention;
Figure 08: integrated resistor light-emitting diode chip for backlight unit making step 7 structural representations of the present invention;
Figure 09: integrated resistor light-emitting diode chip for backlight unit making step 8 structural representations of the present invention;
Figure 10: integrated resistor light-emitting diode chip for backlight unit making step 9 structural representations of the present invention;
Figure 11: integrated resistor light-emitting diode chip for backlight unit making step 10 structural representations of the present invention;
Figure 12: integrated resistor light-emitting diode chip for backlight unit making step 11 structural representations of the present invention;
Figure 13: integrated resistor light-emitting diode chip for backlight unit making step 12 structural representations of the present invention;
Figure 14: integrated resistor light-emitting diode chip for backlight unit making step 13 structural representations of the present invention;
Figure 15: integrated resistor light-emitting diode chip for backlight unit making step 14 structural representations of the present invention;
Figure 16: integrated resistor light-emitting diode chip for backlight unit making step 15 structural representations of the present invention;
Figure 17: integrated resistor light-emitting diode chip for backlight unit making step 16 structural representations of the present invention;
Figure 18: integrated resistor light-emitting diode chip for backlight unit making step 17 structural representations of the present invention;
Figure 19: integrated resistor light-emitting diode chip for backlight unit making step 18 structural representations of the present invention;
Figure 20: integrated resistor light-emitting diode chip for backlight unit making step 19 structural representations of the present invention;
Figure 21: integrated resistor light-emitting diode chip for backlight unit making step 20 structural representations of the present invention;
Figure 22: integrated resistor light-emitting diode chip for backlight unit making step 21 structural representations of the present invention;
Figure 23: integrated resistor light-emitting diode chip for backlight unit making step 22 structural representations of the present invention;
Figure 24: the present invention can directly be connected to the led chip group structural representation on the alternating current.
Description of reference numerals:
1-substrate; 2-resilient coating; 3-N-type layer; 4-N-type is limiting layer respectively; 5-active region layer; 6-P type is limiting layer respectively; 7-P type layer; 8-P type ohmic contact layer; 9-P type metal ohmic contact layer; The 10-the first photoresist layer; The 11-the second photoresist layer; The 12-the three photoresist layer; 121-etching breach; 13-dielectric insulating film; The 14-the four photoresist layer; The 15-the five photoresist layer; 16-metal alloy layer; 160-input electrode metal level; 161-output electrode metal level; 162-PP junction electrode connection metal layer; The 163-the first PN junction electrode connection metal layer; The 164-the second PN junction electrode connection metal layer; The 165-the three PN junction electrode connection metal layer; 17-P type metal ohmic contact layer the first isolation breach; 18-P type metal ohmic contact layer the second isolation breach; R1-first semiconductor resistor; R2-second semiconductor resistor; L1-first light-emitting diode; L2-second light-emitting diode; L3-the 3rd light-emitting diode.
Embodiment
Below in conjunction with Fig. 1 to Figure 24, the present invention will be further described:
As shown in Figure 1, common light-emitting diode chip for backlight unit is followed successively by substrate 1, resilient coating 2, N-type layer 3, N-type respectively limiting layer 4, active region layer 5, P type difference limiting layer 6, P type layer 7 and P type ohmic contact layer 8 from bottom to up.Substrate 1 is carrier, generally is the materials such as sapphire, carborundum or GaN.Resilient coating 2 is excessively layers, the N of growing high-quality on this basis, P, other material such as quantum well.LED is made of pn knot, and resilient coating 2,3 layers on N-type layer, N-type be limiting layer 4 respectively, and P type respectively limiting layer 6 and P type layer 7 is to make required P and the n type material of LED in order to form.Active region layer 5 is luminous zones of LED, and the color of light is by the structures shape of active area.P type ohmic contact layer 8 is last one decks of Material growth, and the charge carrier doping concentration of this one deck is higher, and purpose is for making less ohmic contact resistance.
A kind of led chip group manufacture method that can directly be connected on the alternating current is as follows:
1, forms P type metal ohmic contact layer 9 in P type ohmic contact layer 8 surfaces;
2, light-emitting diode chip for backlight unit is partitioned into a plurality of separate units, wherein becomes semiconductor resistor in the unit of two ends of light-emitting diode chip for backlight unit and form the district;
3, all the other a plurality of separate units are formed a plurality of light-emitting diodes and form the district;
4, will form the first semiconductor resistor R1, the second semiconductor resistor R2 and a plurality of light-emitting diode L1, L2, L3 at light-emitting diode chip for backlight unit by dielectric insulating film 13;
5, each electrode with the first semiconductor resistor R1, a plurality of light-emitting diode and the second semiconductor resistor R2 is connected in series by metal alloy layer 16, namely generates one piece of integrated resistor light-emitting diode chip for backlight unit;
6, use two pieces of integrated resistor light-emitting diode chip for backlight unit in the step 5, two pieces of integrated resistor light-emitting diode chip for backlight unit are connected in parallel on the alternating current both positive and negative polarity, the first semiconductor resistor R1 of one piece of integrated resistor light-emitting diode chip for backlight unit be connected the link of the second semiconductor resistor R2 of piece integrated resistor light-emitting diode chip for backlight unit and directly be connected with the alternating current negative or positive electrode, alternately luminous under the alternating current effect according to two pieces of integrated resistor light-emitting diode chip for backlight unit of diode forward conducting principle.
Concrete detailed step is as follows:
As shown in Figure 2, form P type metal ohmic contact layer 9 in P type ohmic contact layer 8 surfaces.By evaporation or sputtering technology, form one or more layers P type metal ohmic contact layer 9 on P type ohmic contact layer 8 surfaces.P type metal ohmic contact layer 9 is not formed by growth, but forms by methods such as evaporation or sputters, and one of purpose is to make the electrode of device, and two of purpose is for packaging and routing usefulness.
As shown in Figure 3, form the first photoresist layer 10 in P type metal ohmic contact layer 9 surfaces.The first photoresist layer 10 coating speeds are at 2500-5000 rev/min, and between 90 degrees centigrade-100 degrees centigrade of the coating temperature controls, and in baking oven or the baking of iron plate surface, stoving time was respectively 30 minutes and 2 minutes.
As shown in Figure 4, remove part the first photoresist layer 10, polylith first photoresist layer 10 of reservation is used for making semiconductor resistor formation district or light-emitting diode forms the district.
As shown in Figure 5, the P-type material, active area and the part n type material that expose are removed.
As shown in Figure 6, remove remaining the first all photoresist layer 10.
As shown in Figure 7, resulting light-emitting diode chip for backlight unit surface among Fig. 6 is formed the second photoresist layer 11.The second photoresist layer 11 coating speeds are at 2500-5000 rev/min, and between 90 degrees centigrade-100 degrees centigrade of the coating temperature controls, and in baking oven or the baking of iron plate surface, stoving time was respectively 30 minutes and 2 minutes.
As shown in Figure 8, the second photoresist layer 11 that semiconductor resistor is formed separate unit top, district carries out the part removal, forms breach.
As shown in Figure 9, the P type metal ohmic contact layer 9 of breach below carried out complete removal, formation P type metal ohmic contact layer the first isolation breach 17 and P type metal ohmic contact layer the second isolation breach 18.
As shown in figure 10, remove all remaining second photoresist layers 11.
As shown in figure 11, the light-emitting diode chip for backlight unit surface that obtains in Figure 10 forms the 3rd photoresist layer 12.The 3rd photoresist layer 12 coating speeds are at 2500-5000 rev/min, and between 90 degrees centigrade-100 degrees centigrade of the coating temperature controls, and in baking oven or the baking of iron plate surface, stoving time was respectively 30 minutes and 2 minutes.
As shown in figure 12, remove part the 3rd photoresist layer 12, keep the 3rd photoresist layer 12 that semiconductor resistor forms the top, district, keep the 3rd photoresist layer 12 that a plurality of light-emitting diode chip for backlight unit form the top, district and right side, but the light-emitting diode chip for backlight unit of the 3rd photoresist layer 12 on right side, light-emitting diode chip for backlight unit formation district and another one forms the district or there is etching breach 121 in the second semiconductor resistor formation district.
As shown in figure 13, the expose portion that does not cover the 3rd photoresist layer 12 is carried out etching and remove all resilient coatings 2 and N-type layer 3;
As shown in figure 14, remove all remaining the 3rd photoresist layers 12.
As shown in figure 15, the light-emitting diode chip for backlight unit surface that obtains in Figure 14 forms dielectric insulating film 13.The thickness of dielectric insulating film 13 is between 150nm-450nm.
As shown in figure 16, form the 4th photoresist layer 14 in dielectric insulating film 13 surfaces.The 4th photoresist layer 14 coating speeds are at 2500-5000 rev/min, and between 90 degrees centigrade-100 degrees centigrade of the coating temperature controls, and in baking oven or the baking of iron plate surface, stoving time was respectively 30 minutes and 2 minutes.
As shown in figure 17, remove part the 4th photoresist layer 14 and form a plurality of breach that the district forms in the electrode formation district of two semiconductor resistors and the electrode of a plurality of Light-Emitting Diodes;
As shown in figure 18, the dielectric insulating film 13 of a plurality of breach below among Figure 17 is removed.
As shown in figure 19, remove the 4th all photoresist layer 14 of residue.
As shown in figure 20, the light-emitting diode chip for backlight unit surface that obtains in Figure 19 forms the 5th photoresist layer 15.The 5th photoresist layer 15 coating speeds are at 2500-5000 rev/min, and between 90 degrees centigrade-100 degrees centigrade of the coating temperature controls, and in baking oven or the baking of iron plate surface, stoving time was respectively 30 minutes and 2 minutes.
As shown in figure 21, remove part the 5th photoresist layer 15, only keep the 5th photoresist layer 15, the 5th photoresist of dielectric insulating film 13 tops, the first semiconductor resistor R1 leftmost side and the 5th photoresist of dielectric insulating film 13 tops, the second semiconductor resistor R2 rightmost side that any one Light-Emitting Diode P electrode is isolated dielectric insulating film 13 tops in the breach 18 to the 5th photoresist layer 15, P type metal ohmic contact layer the first isolation breach 17 and the P type metal ohmic contact layer second of dielectric insulating film 13 tops between the N electrode;
As shown in figure 22, the light-emitting diode chip for backlight unit surface that obtains in Figure 21 forms metal alloy layer 16.
As shown in figure 23, after removing the metal alloy layer 16 of the 5th photoresist layer 15 and top thereof, remaining metal alloy layer 16 comprises input electrode metal level 160, output electrode metal level 161, PP junction electrode connection metal layer 162 and a plurality of PN junction electrode connection metal layer 163,164,165.
As shown in figure 24, use produced integrated resistor light-emitting diode chip for backlight unit among two pieces of Figure 23, two pieces of integrated resistor light-emitting diode chip for backlight unit are connected in parallel on the alternating current both positive and negative polarity, the first semiconductor resistor R1 of one piece of integrated resistor light-emitting diode chip for backlight unit be connected the link of the second semiconductor resistor R2 of piece integrated resistor light-emitting diode chip for backlight unit and directly be connected with the alternating current negative or positive electrode, alternately luminous under the alternating current effect according to two pieces of integrated resistor light-emitting diode chip for backlight unit of diode forward conducting principle.
The above has carried out exemplary description to the present invention by reference to the accompanying drawings; obvious realization of the present invention is not subjected to the restriction of aforesaid way; as long as the various improvement of having adopted method design of the present invention and technical scheme to carry out; or without improving design of the present invention and technical scheme are directly applied to other occasion, all in protection scope of the present invention.
Claims (3)
1. led chip group that can directly be connected on the alternating current, at least comprise two pieces of integrated resistor light-emitting diode chip for backlight unit, described two pieces of integrated resistor light-emitting diode chip for backlight unit are connected in parallel on the alternating current both positive and negative polarity, each piece integrated resistor light-emitting diode chip for backlight unit comprises the first semiconductor resistor (R1) and the second semiconductor resistor (R2), between described the first semiconductor resistor (R1) and described the second semiconductor resistor (R2), be in series with a plurality of light-emitting diode (L1, L2, L3), described a plurality of light-emitting diode (L1, L2, L3) PN junction moves towards identical, and is alternately luminous under the alternating current effect according to two pieces of integrated resistor light-emitting diode chip for backlight unit of diode forward conducting principle; First semiconductor resistor (R1) of one piece of integrated resistor light-emitting diode chip for backlight unit be connected the link of the second semiconductor resistor (R2) of piece integrated resistor light-emitting diode chip for backlight unit and directly be connected with the alternating current negative or positive electrode; Limiting layer (4), active area structure (5), P type are distinguished limiting layer (6), P type layer (7), P type ohmic contact layer (8) and P type metal ohmic contact layer (9) and are combined from the bottom to top respectively by independently resilient coating (2), N-type layer (3), N-type respectively except sharing a substrate (1) layer for described the first semiconductor resistor (R1), described the second semiconductor resistor (R2) and described a plurality of light-emitting diode; Adjacent two light-emitting diodes are connected with P type metal ohmic contact layer (9) electrode by N-type layer (3) electrode realizes series connection; Described the first semiconductor resistor (R1) and described the second semiconductor resistor (R2) all are provided with respectively two contact electrodes, a contact electrode of described the first semiconductor resistor (R1) or described the second semiconductor resistor (R2) is connected with the negative or positive electrode of power supply, and the another one contact electrode is connected with N-type layer (3) or the P type metal ohmic contact layer (9) of adjacent light-emitting diode; The appearance of described the first semiconductor resistor (R1), described the second semiconductor resistor (R2) and a plurality of light-emitting diodes is all wrapped up one deck dielectric insulating film (13), but the separately dielectric insulating film (13) of two contact electrode tops of P type metal ohmic contact layer (9) electrode of N-type layer (3) electrode of a plurality of light-emitting diodes, a plurality of light-emitting diodes and described the first semiconductor resistor (R1) and described the second semiconductor resistor (R2) is all removed; The P type metal ohmic contact layer (9) of described the first semiconductor resistor (R1) is separated into two contact electrodes by P type metal ohmic contact layer the first isolation breach (17); Described the second semiconductor resistor (R2) P type metal ohmic contact layer (9) is separated into two contact electrodes by P type metal ohmic contact layer the second isolation breach (18); Described light-emitting diode is three: the first light-emitting diode (L1), the second light-emitting diode (L2) and the 3rd light-emitting diode (L3); Wherein, P type metal ohmic contact layer (9) electrode of the first light-emitting diode (L1) is connected with the right side contact electrode of the first semiconductor resistor (R1) by PP junction electrode connection metal layer (162), and N-type layer (3) electrode of the first light-emitting diode (L1) is connected with P type metal ohmic contact layer (9) electrode of the second light-emitting diode (L2) by the first PN junction electrode connection metal layer (163); N-type layer (3) electrode of the second light-emitting diode (L2) is connected with P type metal ohmic contact layer (9) electrode of the 3rd light-emitting diode (L3) by the second PN junction electrode connection metal layer (164); N-type layer (3) electrode of the 3rd light-emitting diode (L3) is connected with the left side contact electrode of the second semiconductor resistor (R2) by the 3rd PN junction electrode connection metal layer (165); It is characterized in that: light-emitting diode chip for backlight unit is followed successively by substrate (1), resilient coating (2), N-type layer (3), N-type respectively limiting layer (4), active region layer (5), P type difference limiting layer (6), P type layer (7) and P type ohmic contact layer (8) from bottom to up; Form P type metal ohmic contact layer (9) in P type ohmic contact layer (8) surface, form the first photoresist layer (10) in P type metal ohmic contact layer (9) surface, remove part the first photoresist layer (10), polylith the first photoresist layer (10) that keeps is used for making semiconductor resistor formation district or light-emitting diode forms the district, the P-type material, active area and the part n type material that expose are removed, removed remaining all the first photoresist layers (10); The light-emitting diode chip for backlight unit surface forms the second photoresist layer (11), the second photoresist layer (11) that semiconductor resistor is formed separate unit top, district carries out the part removal, form breach, P type metal ohmic contact layer (9) to the breach below carries out complete removal, form P type metal ohmic contact layer the first isolation breach (17) and P type metal ohmic contact layer the second isolation breach (18), remove all remaining second photoresist layers (11); The light-emitting diode chip for backlight unit surface forms the 3rd photoresist layer (12), remove part the 3rd photoresist layer (12), keep the 3rd photoresist layer (12) that semiconductor resistor forms the top, district, keep the 3rd photoresist layer (12) that a plurality of light-emitting diode chip for backlight unit form the top, district and right side, but the 3rd photoresist layer (12) on right side, light-emitting diode chip for backlight unit formation district forms the district with the light-emitting diode chip for backlight unit of another one or there is etching breach (121) in the second semiconductor resistor formation district, the expose portion that will not cover the 3rd photoresist layer (12) carries out etching and removes all resilient coatings (2) and N-type layer (3), removes all remaining the 3rd photoresist layers (12); The light-emitting diode chip for backlight unit surface forms dielectric insulating film (13), form the 4th photoresist layer (14) in dielectric insulating film (13) surface, remove part the 4th photoresist layer (14) and form a plurality of breach that the district forms in the electrode formation district of two semiconductor resistors and the electrode of a plurality of Light-Emitting Diodes, the dielectric insulating film (13) of a plurality of breach below is removed, removed all the 4th photoresist layers (14) of residue; The light-emitting diode chip for backlight unit surface forms the 5th photoresist layer (15), remove part the 5th photoresist layer (15), only keep any one Light-Emitting Diode P electrode to the 5th photoresist layer (15) of dielectric insulating film (13) top between the N electrode, the 5th photoresist layer (15) of dielectric insulating film (13) top in P type metal ohmic contact layer the first isolation breach 17 and P type metal ohmic contact layer the second isolation breach (18), the 5th photoresist of the 5th photoresist of the first semiconductor resistor R1 leftmost side dielectric insulating film (13) top and the second semiconductor resistor R2 rightmost side dielectric insulating film (13) top, the light-emitting diode chip for backlight unit surface forms metal alloy layer (16), after removing the metal alloy layer (16) of the 5th photoresist layer (15) and top thereof, remaining metal alloy layer (16) comprises input electrode metal level (160), output electrode metal level (161), PP junction electrode connection metal layer (162) and a plurality of PN junction electrode connection metal layer (163,164,165).
2. the described led chip group that can directly be connected on the alternating current according to claim 1, it is characterized in that: the thickness of described dielectric insulating film (13) is between 150nm-450nm.
3. the described led chip group that can directly be connected on the alternating current according to claim 2, it is characterized in that: the material of described substrate (1) is sapphire, carborundum or GaN.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110375793 CN102412242B (en) | 2011-11-23 | 2011-11-23 | Light-emitting diode (LED) chipset capable of being connected to alternating current directly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110375793 CN102412242B (en) | 2011-11-23 | 2011-11-23 | Light-emitting diode (LED) chipset capable of being connected to alternating current directly |
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| Publication Number | Publication Date |
|---|---|
| CN102412242A CN102412242A (en) | 2012-04-11 |
| CN102412242B true CN102412242B (en) | 2013-04-24 |
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| CN 201110375793 Active CN102412242B (en) | 2011-11-23 | 2011-11-23 | Light-emitting diode (LED) chipset capable of being connected to alternating current directly |
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| US6410940B1 (en) * | 2000-06-15 | 2002-06-25 | Kansas State University Research Foundation | Micro-size LED and detector arrays for minidisplay, hyper-bright light emitting diodes, lighting, and UV detector and imaging sensor applications |
| JP3505374B2 (en) * | 1997-11-14 | 2004-03-08 | 三洋電機株式会社 | Light emitting components |
| CN1943276A (en) * | 2004-02-25 | 2007-04-04 | 迈克尔·米斯金 | AC light emitting diode and AC led drive methods and apparatus |
| CN101072464A (en) * | 2006-10-06 | 2007-11-14 | 范朝阳 | Ac-dc light-emitting diode having integrated protection function |
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| US5463280A (en) * | 1994-03-03 | 1995-10-31 | National Service Industries, Inc. | Light emitting diode retrofit lamp |
| JP3505374B2 (en) * | 1997-11-14 | 2004-03-08 | 三洋電機株式会社 | Light emitting components |
| US6410940B1 (en) * | 2000-06-15 | 2002-06-25 | Kansas State University Research Foundation | Micro-size LED and detector arrays for minidisplay, hyper-bright light emitting diodes, lighting, and UV detector and imaging sensor applications |
| CN1943276A (en) * | 2004-02-25 | 2007-04-04 | 迈克尔·米斯金 | AC light emitting diode and AC led drive methods and apparatus |
| CN101072464A (en) * | 2006-10-06 | 2007-11-14 | 范朝阳 | Ac-dc light-emitting diode having integrated protection function |
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