CN100544041C - Dual-purpose bridge-type illumination light-emitting diode of power of alterating and direct current and manufacture method - Google Patents

Abstract

Dual-purpose bridge-type illumination light-emitting diode of a kind of power of alterating and direct current and manufacture method, it is characterized in that with possess 4 independently luminous PN junction compound chip or with 4 single PN junction chips composition unit bridges formula chips, each chip is drawn 4 leg, and need are transformed the PN junction of light quality, apply fluorescent material, the epoxy resin sealing-in that adapts with it around it by fluorescence.Be selected in interchange or the DC circuit, be made for various illumination light-emitting light fixtures and other light source and use, each light-emitting diode or the luminous PN junction chip of each unit bridge-type integrated circuit are used separately or a plurality of series, parallel or series, parallel applied in any combination.Have serial main advantages such as long service life, use is safe flexibly, easy to maintenance, use cost is low, but especially its can complete utilization cheap alternating current positive and negative half cycle electric energy and tandem compound and save the transformer of the big heavy high price of body and directly apply in the illumination alternating current circuit, this is to be that wide application space and market have been opened up in the White LED illumination in the 4th generation.

Description

Dual-purpose bridge-type illumination light-emitting diode of power of alterating and direct current and manufacture method

Background technology:

According to the color science principle, any in the world color can be mixed by the varying strength of three kinds of colors of red, green, blue, and these three kinds of colors are called primary colours or primary colors.The luminescence mechanism of white light-emitting diode is also similar to it.From nineteen sixty successfully develop light-emitting diode be LED till now, successively succeed in developing from redness to orange AlInGaP and the InGaN luminescent material of blue series, on the basis of Ga (gallium) series, succeed in developing the light-emitting diode of blueness (470nm), blue-green (550nm) and green (525nm) again, as seen the illuminant colour of light-emitting diode realized from ultraviolet, up to infrared nearly all photochromic, these for white light-emitting diode become the 4th generation light source established solid foundation.Along with the further exploitation of light-emitting diode and perfect, white light-emitting diode will develop the energy-efficient light source that becomes 21 century rapidly, and can equally promptly substitute incandescent lamp, fluorescent lamp and the high-voltage gas discharging light of present extensive use.

Recently, because the development rapidly of compound semiconductor epitaxial growth technology and luminescent device manufacturing process technology, developed the very high light-emitting diode of photoelectric conversion efficiency, its light emitting region spreads all over red to blue visible light, even can send infrared light and ultraviolet light; The mankind are seeking always and are developing the solid luminescence light source for many years, and along with the exploitation of luminescent material and the improvement of semiconductor fabrication process, therefore semiconductor lighting is also improved constantly with the light-emitting diodes tube efficiency.At present the compound semiconductor light-emitting material of practicability is that the material with III-VA family element is main luminescent material, particularly adopt the practicability of the blue LED of nitride-based semiconductor InGaN, the blue LED and the yttrium aluminium garnet fluorescent powder of the high brightness more than the 10cd are combined, developed light efficiency and reach the above white light-emitting diode of 20lm/W.This light source will become the energy-saving illumination light source of new century, and will be very noticeable.Moreover, for luminous ultraviolet light-emitting diodes,, also can develop the white light-emitting diode that is used to throw light on by matching with the structure of improving device with the suitable cooperation of fluorescent material in the short wavelength zone.

White light-emitting diode is from succeeding in developing over 4 years, and its luminous efficiency constantly improves.5lm/W from initial stage of development, reached the light efficiency 15lm/W that is equivalent to incandescent lamp by 1999, after bring up to the light efficiency 25lm/W that is equivalent to tungsten halogen lamp again, the U.S. has also held " seminar of LED development strategy " in April, 2000, the light efficiency of the U.S.'s color luminous diode in laboratory has reached 100lm/W at present, and the light efficiency of white light-emitting diode has also reached the level of 40-50lm/W.Each big illumination company of the world and semiconductor company's joint development white light-emitting diode, set up GELcore company as U.S. G and EmCORE cooperation, Siemens and Ou Silang two companies set up co-partnership company etc., and point out that Far East competitor will preponderate in the light-emitting diode field if the white light-emitting diode technology of oneself is not developed in the west: impact the traditional lighting light source.And Japan comes into effect the plan that makes Japan become the solid state lighting advanced person from calendar year 2001, and expect white light-emitting diode in 2010 will be in the illumination market popularity rate up to 13%.Japan has implemented country's " 21 century illumination plan " development plan of high efficiency electric light conversion compound semiconductor " " since 1998,5,000,000,000 yen have been invested, produced 100000000 of white light-emitting diodes in 2000 per year, implementing at present to make the light efficiency of white light-emitting diode to reach the development plan of 80-100lm/W, the light efficiency of estimating white light-emitting diode in 2003 just will reach this target, to reach 120lm/W in 2010, can be made into efficient and be higher than the illuminator of fluorescent lamp, this plan will have an immense impact on to the development of international LED.In addition, also can adopt the light-emitting diode of blue outside line to combine, make its ultraviolet ray excited 3 primary colours fluorescent material that send, also can obtain the white light-emitting diode that efficient is close to or higher than fluorescent lamp with 3 primary colours fluorescent material.Because the rapid raising of white light-emitting diode light efficiency, but fast, the good directionality of little, the vibration resistance of its volume, response speed, life-span reach tens thousand of hours low-voltage driving, photochromicly change little and when changing do not produce the collimation error, no mercury and lead contamination and cause that countries in the world are paid much attention to and competitively research and develop near incandescent light color, colour temperature in addition, will become the energy-efficient light source of replace incandescent and fluorescent lamp.

However, as illuminating light-emitting diode important characteristic parameter is brightness (energy) and photochromic (spectral power distribution), concerning LED, merely increase input power, the brightness meeting is risen pro rata, but the caloric value of led chip can increase thereupon, and too much heat will damage its crystallization and sealing-in and shorten the life-span.Therefore making the electric energy of input power convert luminous energy efficiently to is important key technology.At present the external quantum efficiency of high performance type light-emitting diode only is about 10%, and promptly 90% in the energy of hole and duplet becomes internal heat and worn away, and therefore the thermal power transfer with this part inner consume becomes luminous energy just can improve brightness.Though improved approach has the new luminescent material of research, improve the probability of the inner combination of luminescent layer, raising is taken out the efficient of light and the brightness of present LED is improved 3-4 doubly again from chip, with the level that reaches brightness of fluorescent lamp is fully possible, as the development of Japanese Ri Ya company based on the light efficiency of the led chip of GaN to improve updating at a high speed of 10-20% every year, but Just because of this, the competition in this field is very fierce, and remaining space is also little, there is new footpath to open up as other, its market, science and technology and economy and society benefit are with inestimable.

Goal of the invention: the present invention manufactures and designs dual-purpose bridge-type illumination light-emitting diode of a kind of power of alterating and direct current and manufacture method for the deficiency that solves human prior art exactly, make the luminous work of its not only available DC power supply, more can directly use extremely universal, reliably, cheap and AC power and just complete easily, negative half period electric energy and efficiently utilize and transform the luminous work of AC energy, simplify the power supply complexity and significantly improve electric power system power factor (PF) and fail safe, improve its energy and change into the ratio of light and efficient and significantly reduce electric power system and himself job costs also significantly increases its life-span.

Summary of the invention:

1, inventive principle and problem: alternating current is the most general, the convenient and cheap power supply in the whole world, and direct current is then opposite.The both available alternating current of product of the present invention design, also available direct current is a power supply, and uses conversion very simple, so have the most suitable (practicality) property and vast market and prospect the most.Light-emitting diode is the light emitting semiconductor device that sends visible light, infrared light, ultraviolet light when imposing forward current at the semiconductor PN place.In light-emitting diode, when forward current is flowed through semiconductor PN, produce the radiation process of combination and luminous again in active layer injected electrons and hole.This just points out us: light-emitting diode is also similar to the semiconductor diode of other purposes, only could conducting when forward current and converting electrical energy luminous; Be in cut-off state during reverse current and bear with respect to the reverse voltage reversal of power crest voltage of forward voltage and electric energy and impact and easily breakdown, the result of the heat energy accumulation that does not convert luminous energy to up to the electric energy of 60-90% when adding aforesaid forward conduction and convert to makes the PN junction temperature raise and Fa Gaore rapidly, and high temperature can make charge carrier in the semiconductor (free electron of current opposite in direction and hole) number increase, and temperature is got over the high carrier number also the more, increase also very fast, no matter be N type or P type semiconductor, though all being a kind of charge carrier, they occupy the majority, but being reverse current, another kind of comparatively speaking reverse carrier all can increase and fast rise significantly with temperature, thereby it is promptly withstand voltage significantly to reduce backward resistance, when it is increased to when mutually on duty, the unilateral conduction of PN junction will be destroyed and be reversed puncture and promptly damages and scrap, so temperature is very big to the semiconductor device Effect on Performance. this moment is when also surpassing a certain scope when reverse voltage, reverse current also will heighten suddenly. and these two great destructive factors of temperature rise and reverse voltage add will form withstand voltage the making a concerted effort of powerful reduction together, semi-conductive backward resistance value is that withstand voltage will significantly and fast reduce, and many important parameter indexs such as withstand voltage of its nominal this moment significantly worsen already and descend, operating state is in the most dangerous collapse edge at any time.When under the withstand voltage limit that reaches its this moment, PN junction will unexpected breakdown damage. Here it is all PN junctions or say the difference that the ordinary luminaire essence of advantage managed especially light-emitting diode and tool To Be Protected from Heat by semiconductor (crystal). this shows that temperature rise and reverse voltage are especially key and the direct factors damaged of light-emitting diode of transistor, so present light-emitting diode is substantially all used low-voltage dc power supply.

2, solution: at problem of temperature rise, the way that solves is for making the carrier of PN junction such as the heat transfer of gallium n type material with heat-resisting and conduct heat good substrate and lead, and be designed and manufactured into face contact-type low resistance PN junction, to reduce caloric value and in time to conduct heat and dissipate, promptly reduce penetrating current and keep its nominal withstand voltage to reduce temperature rise; At the reverse voltage problem, except that with the substrate of above-mentioned design and PN junction to keep the withstand voltage, the prior diode that also is Synchronization Design reverse-conducting on same substrate, with minute loses heat with thoroughly overcome the harm of reverse voltage and electric current and convert thereof into luminous energy, that is not only can use AC power to drive, but also can use DC power supply to drive, and using energy source and conversion ratio height, very low, the safety durable of temperature rise.Obviously the light-emitting diode of realization target like this such as price are also inexpensive is the tool high performance-price ratio, will can be applicable to all purposes and occasion, will have whole market rapidly, and prospect is inestimable really.

3, science and technology, economic innovation scheme, advantage and principle: as previously mentioned, alternating current is that the whole world is the most general, most convenient and the most cheap power supply, direct current is then opposite, and the both available alternating current of product of the present invention design, also available direct current is a power supply, and use conversion very simple, so have the most suitable (practicality) property and vast market and prospect the most; When power supply is alternating current, the half cycle that the alternating current that the light-emitting diode of a PN junction can only a complete cycle of unidirectional conducting is arranged one by one, so only can utilize its half electric energy, though only need a light-emitting diode promptly to be equivalent to the principle and the work of half-wave rectifying circuit, different with half-wave rectifying circuit is the distinguishing characteristics part operating load that has been the light-emitting diode double as, so the time this light-emitting diode born whole forward and reverse voltages of power supply and maximum crest voltage, this has fallen half with handle for the power factor (PF) of power generating network does not but then have any difference, that is an efficient and an income for generating equipment drop to half, this has also descended with a benefit for electricity power enterprise, and half does not have essential distinction, and these enterprises in addition flower cost and equipment handle this and fail the new problem that electric energy produced of conversion using such as its heat of sending out etc., the cost that is equivalent to these enterprises significantly rises once more, and cause the waste of the energy and resource, and existing incandescent lamp and other lighting such as inductive ballast fluorescent lamp, high-voltage lamps etc. only need be mixed a valency and inexpensive ordinary capacitor simply and also be solved these problems substantially, electric ballast fluorescent lamp or high-voltage lamp etc. can be up to then there not being these problems more than 0.9 substantially because of its power factor (PF); Though full-wave rectifying circuit does not have above-mentioned to supplying power generating network, the disadvantageous problem of equipment and enterprise, but because of supply voltage must be promoted one times must be many with a diode and increased the centre tapped potential device of being with of one times of secondary winding, and because of the secondary winding be that voltage has increased by one times, each diode and will bear the double voltage that half-wave is a power supply, these must significantly improve the withstand voltage of diode and increase not only heavy but also volume is big and the not low serial costs such as transformer of cost, also can make power supply and circuit complexity, huge; Though bridge rectifier manys 2 pipes of usefulness than full-wave circuit, but all shortcomings of full-wave circuit have been avoided, as because of being that the i.e. 2 times of supply voltages of all-wave are born in per two pipes series connection jointly, so the voltage that each pipe is born only is 1/4 of all-wave voltage, also can be because of need not to get rid of big heaviness of body and expensive transformer, just all shortcomings of half-wave circuit such as complete utilization have also been overcome, therefore the negative half period electric energy also improves power factor (PF), it is 1/2 of supply voltage that each pipe is also only born half-wave, so can be by reducing the withstand voltage of pipe and save half auxiliary winding of transformer and even thoroughly abandon transformer and the important cost of the power factor (PF) saving that therefore improves waits and reduces the cost that institute increases pipe, and so and improved the fail safe that is reversed voltage breakdown: because of transformer is the inductive energy storage components and parts of phase lag, be equivalent to increase the reverse voltage active force.And present integrated circuit technique and technology and extremely low manufacturing cost are easy in same pipe the several separate PN junctions of making on compound several substrates or the same substrate more, all be equivalent to a plurality of independently diodes, and the lead-in wire and the using method of the present invention's design are also extremely simplified: each unit bridge-type LED comprises friendship, DC dual-purpose power supply and input, the output line conversion is at interior 4 lead-in wires only altogether, and this is than forming discrete operating circuits with four single diodes and simplifying manyly with a plurality of such circuit composition compound circuits again, it is also simple and convenient to install and use maintenance, cost is obviously very low; The more important thing is that four or more a plurality of light source converge in the same pipe or to form its brightness of complete multiple tube on the same substrate also much better than, and because of making raw material, technology and condition of work, heating disperses and dispelling the heat event temperature rise uniformity easily, add the unification of element and circuit, the highly related mutually important application of series such as its spectrum, life-span also just must be highly consistent and stable with evaluation index.

In addition, the present invention also has more crucial important unique advantage: can easily learn all from each width of cloth accompanying drawing of specification no matter each unit bridge-type LED is used for exchanging or DC circuit, it is circuit pathways that all there are two relatively independent and complete circuit loops its inside, in other words when certain even some independent bridge-type LED bar paths opens circuit because of certain PN junction damages or opens a way, do not block its another circuit pathways and on LED luminous, can not block its circuit of other independent bridge-type LED of serial or parallel connection and luminous all around yet; (should be if this PN junction is breakdown promptly the open circuit as the master, because illumination with PN junction or LED power big and design employing face contact-type so be difficult for opening circuit fully or opening a way, and the present invention also designs its PN junction and the IC interior wiring system adopts gold thread to weld-see concrete implementing method content, and the bloated shrinkage ability extra-heavy of good ductility of gold utensil thereby heat resistanceheat resistant, the good electric conductivity of also having reaches high melting temperature so also can not open circuit easily or open a way so self-heating is low), this moment, it just was equivalent to lead, continue connection circuit and work hard in glove with this path loop to make another LED on it luminous, thus can therefore not block this path and on another LED work, even and Alternating Current Power Supply is continuing operate as normal so also can therefore not reduce power factor (PF) because of also having another PN junction, naturally more can not stop another path; And the possibility that two PN junctions on same path damage simultaneously is littler because their original just mutually series connection bear supply voltage jointly, be that the virtual voltage that bears of each PN junction only is half of supply voltage; Such situation even first kind situation also is difficult to take place, can take place so be difficult to the imagination in same reason; Even as for two paths and on PN junction possibility that above-mentioned certain class two class fault all take place be that probability is then more little, in fact be difficult to the probability general rule that promptly can not take place according to the tiny probability incident, so analyze discussion no longer one by one.Therefore, the unit of the present invention design or composite bridge LED and integrated circuit thereof can not quit work with luminous because of the accidental damage of certain even some PN junctions, so safe and reliable, more be difficult for talking about rashly and scrap two words, that is its longer service life, use and maintenance cost are low and scrap abandonment less so environmental pollution is very little because of the life-span is long.

More than these are exactly that the serial considerable advantage place of dual-purpose bridge-type illumination light-emitting diode of power of alterating and direct current of the present invention and manufacture method, existing single core or multicore (the simple and mechanical repetition enumerated) LED are too far behind to catch up because of not possessing these advantages, also can widely be applied in prior art and the product application prospect and extensive market.

Description of drawings:

Being unit bridge-type LED and working in electrical schematic diagram in the alternating current circuit of Fig. 1 design.What ∽ represented is AC power, * expression is electric connection point, LED1-LED4 represents 4 luminous PN junctions, wherein LED1, LED2 represent lower-powered point-contact type or the less luminous PN junction of face contact-type of contact-making surface, LED3-LED4 represents the bigger luminous PN junction of face contact-type of power and contact-making surface, and R represents that luminous PN junction is with oneself the virtual equivalent resistance as load.If the positive half cycle voltage of alternating current is added in the arrow of LED2 is+extreme, LED1 and LED4 because of reverse voltage by not conducting, LED2 and LED3 because of be the forward voltage conducting and with oneself as load forming circuit loop consumed power, the part with the electric energy that it was consumed is converted to luminous energy again, remaining electric energy then converts heat to.When the negative half period of alternating current is added in LED4+ when extreme, then the situation with above-mentioned is just opposite, and LED1 and LED4 are luminous because of the forward voltage conducting, LED2 and LED3 be because of being not conducting of reverse voltage.

Being unit bridge-type LED and working in electrical schematic diagram in the DC circuit of Fig. 2 design.+ and-what represent is DC power supply and positive and negative electrode thereof, different with Fig. 1 is that LED1 '-LED4 ' represents the luminous PN junction of 4 equal-wattages and contact area and saved virtual equivalent resistance and circuit thereof.The arrow that direct voltage is added in LED1 ' and LED3 ' promptly+extreme, luminous because of being the forward voltage conducting, LED2 ' and LED3 ' are because of also being that also conducting is luminous for forward voltage.Situation in the explanation of all the other situations and Fig. 1 is similar so do not give unnecessary details.

Being unit bridge-type LED and working in integrated circuit and wiring system and 4 line leading foot schematic diagrames in the alternating current circuit of Fig. 3 design.1,2,3,4 expressions is the concrete numbering of 4 terminal pins, wherein 1 and 3 expressions be the terminal pin that constitutes electric power loop, 2 and 4 expressions be the terminal pin that is connected AC power, dotted line represents that the integrated circuit outside is the mutual electrical connection between the light-emitting diode terminal pin, and other situation and Fig. 1 illustrate together.

Being unit bridge-type LED and working in integrated circuit and wiring system and 4 line terminal pin schematic diagrames in the DC circuit of Fig. 4 design.Similar to Fig. 3,1 ', 2 ', 3 ', 4 ' expression also be the numbering of 4 terminal pins, different with Fig. 3 is, wherein 1 ' and 3 ' expression be the terminal pin that is connected with DC power supply, simultaneously also be the terminal pin that constitutes electric power loop, 2 ' and 4 ' what represent is the spare lead wire pin that is connected AC power.Other situation illustrates identical with Fig. 2.

Fig. 5 design work in compound integrated circuit in parallel and wiring system and 4 wire pin line schematic diagrames separately in the alternating current circuit by what Fig. 3 and two bridge-type LED of Fig. 4 formed, dotted line represents that the integrated circuit outside is the mutual electrical connection between two luminescence chip lead-foot-lines, connection by their terminal pin of conversion is parallel to these two bridge-type LED carries out work and luminous in the alternating current circuit: AC power by 4 with 4 ' terminal pin and 2 two bridge-type LED is in parallel and constitute the loop with 2 ' terminal pin, 1 and 3 pin and 1 ' and 3 ' pin constitute its bridge-type LED internal circuit loop under separately respectively.The relevant explanation with Fig. 1-4 of other situation is identical.

Fig. 6 design work in compound integrated circuit in parallel and wiring system and 4 wire pin line schematic diagrames separately in the DC circuit by what Fig. 3 and two bridge-type LED of Fig. 4 formed, dotted line represents that the integrated circuit outside is the mutual electrical connection between two luminescence chip lead-foot-lines, connection by their terminal pin of conversion is parallel to these two bridge-type LED carries out work and luminous in the DC circuit: DC power supply by 1 with 1 ' terminal pin and 3 two bridge-type LED is in parallel and constitute the loop with 3 ' terminal pin, 2 are respectively separately with 4 pin and 2 ' with 4 ' pin, and bridge-type LED is connected the standby pin of AC power.The relevant explanation with Fig. 1-4 of other situation is identical.

Fig. 7 design work in series connection compound integrated circuit and wiring system and 4 wire pin line schematic diagrames separately in the alternating current circuit by what Fig. 3 and two bridge-type LED of Fig. 4 formed, dotted line represents that the integrated circuit outside is the mutual electrical connection between two luminescence chip lead-foot-lines, connection by their terminal pin of conversion is series at these two bridge-type LED carries out work and luminous in the alternating current circuit: AC power is together in series two bridge-type LED by 4 and 2 ' terminal pin and 2 and 4 ' terminal pin and constitutes the loop, and 1 and 3 pin and 1 ' and 3 ' pin constitute its bridge-type LED internal circuit loop under separately respectively.The relevant explanation with Fig. 1-4 of other situation is identical.

Fig. 8 design work in series connection compound integrated circuit and wiring system and 4 wire pin line schematic diagrames separately in the DC circuit by what Fig. 3 and two bridge-type LED of Fig. 4 formed, dotted line represents that the integrated circuit outside is the mutual electrical connection between two luminescence chip lead-foot-lines, connection by their terminal pin of conversion is series at these two bridge-type LED carries out work and luminous in the DC circuit: DC power supply is by 1 and 3 ' terminal pin formation loop, 1 ' and 3 pin are together in series two bridge-type LED, and 2 are respectively two bridge-type LED with 4 terminal pins and 2 ' with 4 ' terminal pin is connected the standby pin of alternating current circuit.The relevant explanation with Fig. 1-4 of other situation is identical.

Embodiment:

At first be to select for use suitably withstand voltage standard specification (design gross power and the supply voltage requirement of looking light-emitting diode when the time comes are specifically selected again) type substrate to make the carrier substrate of luminescent material such as gallium series luminescent material PN junction with power and area by required LED such as spectrum etc., also available one chip is formed composite substrate or at the two-sided of same substrate or arbitrary needs position, PN junction with same or different luminescent materials and 4 of technology manufacturings or more independently identical or different luminescent materials, has the compound led chip that 4 or how identical or different PN junction promptly are equivalent to 4 or how identical or different luminous substrate and form one.Next is to manufacture integrated circuit: led chip is placed in its conductor structure, according to the design as specification Fig. 3-Fig. 8 unit or composite bridge integrated circuit electrical schematic diagram, per 4 PN junctions are formed the complete integrated operating circuit of modular bridge-type, the IC interior wiring system electrically connects to finish with the gold thread welding, contrast 4 lead-out wires that accompanying drawing 3 or accompanying drawing 4 indicated afterwards again and draw 4 link pin, and the numbering of 4 lead-out wires being indicated according to accompanying drawing 3 or accompanying drawing 4 is indicated correct and unique numbering of each bar link pin lead-out wire corresponding with it one by one; Luminous PN junction of separate unit formula bridge-type that each is complete and general like this or light-emitting diode and operating circuit thereof refer again to the various separate unit lists of accompanying drawing 3-8 design and use or share complete the electrically connecting of finishing required integrated circuit inside and outside integral body in compound integrated circuit, by simple change luminous PN junction of each independent bridge-type or the simple and easy connection each other of light-emitting diode outside lead.Also should be pointed out that by lay special stress on: though reason the present invention as space is limited only designs and used two luminous PN junctions of independent bridge-type or light-emitting diode and integrated circuit thereof simultaneously herein, but its disclosed circuit, operation principle and wiring, core essentiality contents such as connection are abundant with concrete scheme, no matter since clearly disclose is to hand over, DC circuit is still gone here and there, and connection circuit all can use two simultaneously, naturally also can use several as required simultaneously, use with daily interchange mains lighting supply of direct usefulness and higher voltage as a plurality of series connection to drive to save transformer more expensive and the big heaviness of body, also can use a plurality of parallel connections to satisfy different illumination intensities and area requirements simultaneously to improve luminous power, also can not only go here and there but also and have both at the same time to satisfy various application occasions and demand.Be as non-its light of being sent out of direct use but by fluorescent illumination once more, also only need around chip, to apply simply mutual suitable cooperations of fluorescent material such as YAG.Need go into one or more unit bridge-type integrated circuit with the epoxy resin sealing-in according to producing at last, appraise and decide, demarcate also standardization again and fix each pin line, promptly get the dual-purpose bridge-type illumination light-emitting diode of power of alterating and direct current.Not only to have played the protection substrate be chip, but also play the light harvesting prism to answer lay special stress on to be pointed out that resin, so at the particular location of the luminous PN junction that manufactures and designs its inside with specifically during the sealing-in profile, should combine these two factors to cooperatively interact.Introduce the spectrum of White LED and ordinary incandescent lamp and some difference places of distribution in addition again, so that more people understand the present invention be about in the near future a large amount of make use the 4th generation light source be the using value in the White LED and the place of market prospects: the light of White LED sends from LED at first, in the phosphor powder layer around inciding, through multiple scatter reflections, absorb the back and launch light to the outside, the spectrum peak of LED is 465nm, half-peak value width 30nm, be very sharp-pointed blue color spectrum, send the mild spectrum line that peak value is sodium yellow 555nm, Huang by blue light excitation YAG fluorescent material, blue light mixes mutually mutually and obtains white light behind the lining.White LED has the diversity and the big feature of the light distribution characteristic degree of freedom of color.As mentioned above, identical with the common LED lamp, White LED equally can be when making the distance of the curvature of the particular location of and bridge-type chip and their PN junction single or compound and resin prism and prism and chip chamber according to the decision of design needs obtain light distribution characteristic miscellaneous, all be easy to carry out distribution controls for the little pencil light harvesting of shape or the diffused light of wide-angle.Obviously the tool competitive advantage of bridge-type LED.

Embodiment and explanation: the embodiment of the invention and explanation are with accompanying drawing 3-8 and explanation, so directly replace embodiment and explanation, no longer repeated description with accompanying drawing 3-8 and explanation.

Claims (3)

1, the dual-purpose bridge-type illumination light-emitting diode of a kind of power of alterating and direct current, it is characterized in that per 4 luminous PN junctions are electrically connected the luminous PN junction of component units bridge-type, the luminous PN junction of each unit bridge-type is drawn 4 leg, need are transformed the PN junction of light quality, the fluorescent material that coating adapts with it around it by fluorescence, again with the bridge-type chip epoxy resin sealing-in of one or more unit.

2, the manufacture method of the dual-purpose bridge-type illumination light-emitting diode of power of alterating and direct current is as follows:

A) manufacturing of luminous PN junction chip: at arbitrary of same chip or two-sidedly need the position, make the PN junction of 4 or more independently identical or different luminescent materials with same or different luminescent materials and technology, or single PN junction chip composition 4 or the how identical or different PN junction chip made with same or different luminescent materials and technology;

B) manufacturing of luminous PN junction chip integrated circuit: with a) described luminous PN junction chip, per 4 PN junctions are formed a complete modular bridge-type integrated circuit, and draw respectively between mutually in parallel and anodal two PN junctions in parallel mutually of its negative pole that 1 terminal pin, negative wire pin are numbered 1, the positive wire pin is numbered 2, respectively draw 1 terminal pin between the both positive and negative polarity of its two PN junctions of connecting mutually, be numbered 3 and 4 respectively, the integrated circuit wiring system electrically connects to finish with the gold thread welding;

C) manufacturing of coating fluorescent material luminous PN junction chip integrated circuit: according to b) described luminous PN junction chip integrated circuit, applies around this PN junction and fluorescent material that it is suitable mutually at the light that non-direct use PN junction is sent out;

D) encapsulation of luminous PN junction chip integrated circuit: with b) described luminous PN junction chip integrated circuit or c) the luminous PN junction chip of described coating fluorescent material integrated circuit, need go into one or more unit bridge-type integrated circuit with the epoxy resin sealing-in according to producing;

E) manufacturing of the dual-purpose bridge-type illumination light-emitting diode of power of alterating and direct current: with d) packaged luminous PN junction chip integrated circuit is appraised and decided, is demarcated and each pin line is fixed in standardization, promptly gets the dual-purpose bridge-type illumination light-emitting diode of power of alterating and direct current.

3, the purposes of the dual-purpose bridge-type illumination light-emitting diode of the described power of alterating and direct current of claim 1: be selected in interchange or the DC circuit, be made for various illumination light-emitting light fixtures and other light source and use, each light-emitting diode or the luminous PN junction chip of each unit bridge-type integrated circuit are used separately or a plurality of series, parallel or series, parallel applied in any combination.

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