CN112397489A - High-voltage alternating-current LED light source for plant light supplement and illumination equipment - Google Patents

High-voltage alternating-current LED light source for plant light supplement and illumination equipment Download PDF

Info

Publication number
CN112397489A
CN112397489A CN201910772067.XA CN201910772067A CN112397489A CN 112397489 A CN112397489 A CN 112397489A CN 201910772067 A CN201910772067 A CN 201910772067A CN 112397489 A CN112397489 A CN 112397489A
Authority
CN
China
Prior art keywords
light
powder layer
led
voltage
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910772067.XA
Other languages
Chinese (zh)
Inventor
潘翔
李许可
吴永
周泓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANGZHOU HANHUI OPTOELECTRONIC Tech CO Ltd
Original Assignee
HANGZHOU HANHUI OPTOELECTRONIC Tech CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANGZHOU HANHUI OPTOELECTRONIC Tech CO Ltd filed Critical HANGZHOU HANHUI OPTOELECTRONIC Tech CO Ltd
Priority to CN201910772067.XA priority Critical patent/CN112397489A/en
Publication of CN112397489A publication Critical patent/CN112397489A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

Abstract

The invention discloses a high-voltage alternating current LED light source for plant light supplement and illumination equipment, wherein the high-voltage alternating current LED light source for plant light supplement comprises a substrate, a high-voltage LED wafer group, a first adhesive powder layer and a second adhesive powder layer; controlling the weight ratio and the thickness of the transparent adhesive medium and the red fluorescent particles of the first adhesive powder layer; and simultaneously controlling the weight ratio and the thickness of the transparent adhesive medium and the yellow fluorescent particles of the second adhesive powder layer, so that the ratio of the number of red light, blue light and green light emitted by the high-voltage alternating-current LED light source for plant light supplement in unit time is 65-95: 5-25: 5-20, wherein the high-voltage LED wafer group is a high-voltage alternating-current LED wafer group. The high-voltage alternating-current LED light source has high working voltage, the working voltage of a packaged finished product is easy to approach to the commercial power, the conversion efficiency of a driving power supply is improved, and the cost of the driving power supply is reduced; in addition, the high-voltage alternating current LED light source reduces the die bonding and bonding quantity of the chip, and is beneficial to reducing the packaging cost.

Description

High-voltage alternating-current LED light source for plant light supplement and illumination equipment
Technical Field
The invention relates to a high-voltage alternating current LED light source for plant light supplement and illumination equipment, and belongs to the technical field of facility agriculture illumination.
Background
With the deep development of the LED in the illumination field, the conventional low voltage LED increasingly suffers from inherent drawbacks, including short service life of the driving power supply, low conversion efficiency, poor heat dissipation of the low voltage LED, inability to operate under a large current, and the like. In the LED lighting device, the luminous efficiency of the LED lighting device is affected by the luminous efficiency of the chip, the packaging method, and the driving efficiency. For devices containing LED chips (and/or one or more other solid state light emitting devices), the best performance driving technique is to have "high voltage, low current" rather than "low voltage, high current". The general small-sized LED chip operates under the current of 20-30 mA and the voltage of 3V, but the general power supply chip operates under the current of 350mA and 3V.
Thus, the low voltage LEDs of the prior art suffer from the following disadvantages:
firstly, need plus drive power supply, the electric energy conversion is inefficient. The traditional gallium nitride-based light emitting diode works under direct current voltage, the voltage range is 2.9-3.5V, and the working current is usually 20 mA. In order to achieve the brightness required by the general illumination of the LED, the operating current of the LED sub-chip is generally increased to over 100mA, and currently, 100mA, 350mA and 700mA are commonly used. Since the commercial power system is mainly based on ac high voltage, it is necessary to provide a stable current source by using an electric energy conversion method such as a step-down transformer or a rectifier to control the light emission of the LED. If a high-power LED sub-chip with large current is adopted, a larger driving power supply is needed in the driving device, although the driving power supply technology in the prior art is mature, the reliability of the driving power supply is not high (about 2 ten thousand hours) and the service life of the driving power supply is generally shorter than that of an LED light source (as long as 5-10 ten thousand hours), which becomes a main bottleneck of the service life of the LED lighting device.
When alternating current commercial power is converted into direct current, a part of power is lost, so that the working efficiency of the LED is reduced; meanwhile, the additional transformer or rectifier increases the overall manufacturing cost, occupies a space to affect the appearance of the lighting tool, and generates heat to reduce the safety of the LED in long-term use. Moreover, the additional circuit itself has a shorter lifetime than the LED, thereby reducing the overall lifetime of the LED in application. Meanwhile, alternating current needs to be converted into direct current through the filter rectification circuit, so that the whole LED lamp is large in size, and the service life is greatly reduced due to the introduction of an electrolytic capacitor (the service life is only 2000-.
And the power type LED lamp usually works under a large current, the performance of the power type LED lamp is seriously influenced by the current expansion problem, the light emergence rate is low, and the power consumption is increased. Uneven current spreading easily causes current crowding, and the luminous efficiency of the device is greatly reduced. When the number of the LED lamp strings is fixed, when the alternating voltage input by the power input end of the LED driving system is increased, the resistance value of the power tube is increased under the condition that the system current is not increased, so that the power consumption of the power tube is increased and the heating is serious, once the temperature in a chip is increased to trigger over-temperature regulation, the total power of the system is increased and then decreased, and the problems of unstable power and serious fluctuation occur; the line loss caused by large current driving is also higher, and the junction temperature of the chip rises under the injection of large current, so that the luminous efficiency is influenced. Therefore, the wasted energy consumption is increased, the heat dissipation burden of the lamp is also increased, a heat dissipation structure with a complex structure is required to be designed or a heat sink is additionally arranged to cool down, the cost is high, and the price of the LED lamp is difficult to reduce.
Thirdly, the cost of the finished product is increased. A plurality of LED light sources are connected in series in a mode of LED light source + resistor, and then the current limiting function is achieved through the series resistor. The alternating current is mains supply AC220V, has the voltage unstable phenomenon, and the voltage fluctuation is very big, and can be more than 280V sometimes, and through resistance current limiting, the electric current also can fluctuate greatly, can not effectual constant current and protect LED to the resistance can generate heat, consumes the electric energy, reduces the light efficiency. And the packaging application of the product increases the volume of the circuit product and the cost of assembly, routing, labor and the like. The dc light emitting diode chip often has its light emitting power and design limited by its operating voltage, size limitation and current clustering, resulting in low light efficiency and relatively poor stability.
Disclosure of Invention
The invention aims to provide a high-voltage alternating current LED light source for plant light supplement, which enables the high-voltage alternating current LED light source for plant light supplement to work under high voltage through a high-voltage LED wafer group, and solves the technical problems.
The technical scheme adopted by the invention for solving the technical problems is as follows: a high-voltage alternating current LED light source for plant light supplement comprises a substrate, a high-voltage LED wafer group, a first adhesive powder layer and a second adhesive powder layer;
the high-voltage LED wafer set is a high-voltage alternating current LED wafer set, the high-voltage alternating current LED wafer set comprises a plurality of wafer strings which are connected in parallel in an opposite direction, and the wafer strings are provided with different numbers of sub-wafers which are connected in series; the sub-chip comprises a blue light LED sub-chip and/or an ultraviolet LED sub-chip;
when the wafers are connected in series into the power supply circuit, the positive ends of a part of the wafer strings are connected with the first power supply connecting end, and the negative ends of the wafer strings are connected with the second power supply connecting end; the negative end of the other part of the wafer string is connected with the first power supply connecting end, and the negative end of the other part of the wafer string is connected with the second power supply connecting end;
a first adhesive powder layer covers the upper part of the LED sub-wafer; the first adhesive powder layer fixes the LED sub-chip on the substrate and is a mixture of a transparent adhesive medium and red fluorescent particles;
the second rubber powder layer covers the first rubber powder layer and completely wraps the first rubber powder layer; the second adhesive powder layer is a mixture of a transparent adhesive medium and yellow fluorescent particles;
controlling the weight ratio of the transparent adhesive medium of the first adhesive powder layer to the red fluorescent particles and the thickness of the first adhesive powder layer; meanwhile, the weight ratio of the transparent adhesive medium of the second adhesive powder layer to the yellow fluorescent particles and the thickness of the second adhesive powder layer are controlled, so that the ratio of the red light to the blue light photons emitted by the high-voltage alternating-current LED light source for plant light supplement in unit time is 65-95: 5-35; or the ratio of the number of photons of the red light, the blue light and the green light emitted in unit time is 65-95: 5-25: 5-20; or the ratio of the red light, the blue light and the ultraviolet light emitted in unit time is 70-95: 5-25: 1-5.
The invention also adopts the following technical scheme for solving the technical problems: a high-voltage alternating current LED light source for plant light supplement comprises a substrate, a high-voltage LED wafer group, a first adhesive powder layer and a second adhesive powder layer;
the high-voltage LED wafer set is a high-voltage alternating current LED wafer set, the high-voltage alternating current LED wafer set comprises a plurality of wafer strings which are connected in parallel in an opposite direction, and the wafer strings are provided with different numbers of sub-wafers which are connected in series; the sub-chip comprises a blue light LED sub-chip and/or an ultraviolet LED sub-chip;
when the wafers are connected in series into the power supply circuit, the positive ends of a part of the wafer strings are connected with the first power supply connecting end, and the negative ends of the wafer strings are connected with the second power supply connecting end; the negative end of the other part of the wafer string is connected with the first power supply connecting end, and the negative end of the other part of the wafer string is connected with the second power supply connecting end;
a first adhesive powder layer covers the upper part of the LED sub-wafer; the first adhesive powder layer fixes the LED sub-chip on the substrate and is a mixture of a transparent adhesive medium and red fluorescent particles;
the second rubber powder layer covers the first rubber powder layer and completely wraps the first rubber powder layer; the second adhesive powder layer is a mixture of a transparent adhesive medium and infrared fluorescent particles;
controlling the weight ratio of the transparent adhesive medium of the first adhesive powder layer to the red fluorescent particles and the thickness of the first adhesive powder layer; meanwhile, the weight ratio of the transparent adhesive medium of the second adhesive powder layer to the infrared fluorescent particles and the thickness of the second adhesive powder layer are controlled, so that the ratio of the number of red light photons to the number of blue light photons emitted by the high-voltage alternating-current LED light source for plant light supplement in unit time is 70-95: 5-30; or the ratio of the number of photons of the red light, the blue light and the infrared light emitted in unit time is 65-95: 5-25: 1-15; or the ratio of the red light, the blue light and the ultraviolet light emitted in unit time is 70-95: 5-25: 1-10.
Optionally, blue light and ultraviolet light emitted by the blue light LED sub-wafer and the ultraviolet LED sub-wafer are converted into spectra matched with a photosynthesis curve through fluorescent particles in the first adhesive powder layer and the second adhesive powder layer, so that the method is suitable for illumination requirements of different growth stages of plant growth;
when the second gelatine powder layer comprises yellow fluorescent particles, light emitted by the blue LED sub-chip is blue light with dominant wavelength range of 400nm to 480nm, red fluorescent particles and yellow fluorescent particles of the first gelatine powder layer and the second gelatine powder layer are excited by the blue light respectively to generate red light with dominant wavelength range of 600nm to 680nm and green light with dominant wavelength range of 490nm to 590nm, and the un-excited blue light and the light converted by excitation form a spectrum matched with the spectral characteristics of photosynthesis of plants;
when the second gelatine powder layer comprises infrared fluorescent particles, light emitted by the blue light LED sub-chip is blue light with the dominant wavelength range of 400nm to 480nm, red fluorescent particles and infrared fluorescent particles of the first gelatine powder layer and the second gelatine powder layer are excited by the LED blue light respectively to generate red light with the dominant wavelength range of 600nm to 680nm and infrared light with the dominant wavelength range of 700nm to 750nm, and the un-excited blue light and the light converted by excitation form a spectrum which accords with the plant photosynthesis curve characteristics and is beneficial to regulation and control of plant morphology and flowering phase;
when the second gelatine powder layer comprises yellow fluorescent particles, the light emitted by the ultraviolet LED sub-wafer is ultraviolet light with the dominant wavelength range of 320nm to 400nm, the red fluorescent particles and the yellow fluorescent particles of the first gelatine powder layer and the second gelatine powder layer are respectively excited by the ultraviolet light to generate red light with the dominant wavelength range of 600nm to 680nm and green light with the dominant wavelength range of 490nm to 590nm, and the un-excited ultraviolet light and the light converted by excitation form a spectrum which accords with the characteristic of the photosynthesis curve of the plant;
when the second gelatine powder layer comprises infrared fluorescent particles, light emitted by the ultraviolet LED sub-wafer is ultraviolet light with the dominant wavelength range of 320nm to 400nm, red silver light particles and infrared fluorescent particles of the first gelatine powder layer and the second gelatine powder layer are respectively excited by the ultraviolet light to generate red light with the dominant wavelength range of 600nm to 680nm and infrared light with the dominant wavelength range of 700nm to 700nm, and the un-excited ultraviolet light and the light converted by excitation form a spectrum which accords with the plant photosynthesis curve characteristics and is beneficial to regulation and control of plant shapes and flowering phases.
Optionally, the blue LED sub-chip is an LED sub-chip having a light emission peak within a range of 400nm to 480nm or a combination of LED chips having different wavelengths, and the ultraviolet LED sub-chip is an LED sub-chip having a light emission peak within a range of 320nm to 400nm or a combination of LED chips having different wavelengths.
Optionally, the high-voltage ac LED light source for plant light supplement further includes a rectifier circuit electrically coupled to the high-voltage ac LED light source to provide an ac voltage source for rectifying an ac voltage for the high-voltage ac LED chip set.
Optionally, the high-voltage AC LED chip set is driven by an external AC voltage, and the driving voltage is equal to or close to an external AC working voltage.
The invention also adopts the following technical scheme for solving the technical problems: an illumination device comprises the high-voltage alternating current LED light source for plant light supplement.
Optionally, the high-voltage ac LED light source is connected to the first power connection terminal and the second power connection terminal of the external power supply after being connected in series to the anti-parallel sub-chip string through a resistor.
Optionally, the illumination device further comprises an electrical connector; the electric connector is connected with the high-voltage LED wafer group and communicated with an external AC power supply.
Optionally, the light source and the illumination device are used in one or more of the following applications: artificial climate boxes, illumination incubators, plant factories, tissue culture rooms and protected agriculture.
The invention has the following beneficial effects: the high-voltage alternating-current LED light source has high working voltage, the working voltage of a packaged finished product is easy to approach to the commercial power, the conversion efficiency of a driving power supply is improved, and the cost of the driving power supply is reduced; in addition, the high-voltage alternating current LED light source reduces the die bonding and bonding quantity of the chip, and is beneficial to reducing the packaging cost.
Drawings
FIG. 1 is a schematic structural view of a high-voltage AC LED light source for plant light supplement according to the present invention;
FIG. 2 is a schematic structural diagram of a high voltage AC LED light source according to the present invention;
the notation in the figures means: 1-a substrate; 2-an LED sub-chip; 3-a first adhesive powder layer; 4-a second gelatine layer.
Detailed Description
The technical solution of the present invention is further described below with reference to the following embodiments and the accompanying drawings.
Example 1
The embodiment provides a high-voltage alternating current LED light source for plant light supplement, which comprises a substrate, a high-voltage LED wafer group, a first adhesive powder layer and a second adhesive powder layer.
The high voltage LED wafer set comprises a plurality of LED sub-wafers connected in series and/or in parallel, in this embodiment, the LED sub-wafers are any one selected from the group consisting of: a semiconductor light emitting diode; an Organic Light Emitting Diode (OLED); a quantum dot light emitting diode QLED and a Micro-LED; more preferably, the LED sub-wafer is a blue LED sub-wafer and/or an ultraviolet LED sub-wafer, the blue LED sub-wafer is an LED sub-wafer having a light emission peak within a range of 400nm to 480nm or a combination of LED wafers having different wavelengths, and the ultraviolet LED sub-wafer is an LED sub-wafer having a light emission peak within a range of 320nm to 400nm or a combination of LED wafers having different wavelengths. Herein, "high voltage" in the present invention means that a voltage drop across an LED light source is at least three times greater than a voltage array of one LED light emitting device in the LED light source.
A first adhesive powder layer covers the upper part of the LED sub-wafer; in this embodiment, the LED sub-chip is fixed on the substrate by the first adhesive powder layer, which is a mixture of a transparent adhesive medium and red fluorescent particles, wherein a weight ratio of the transparent adhesive medium to the red fluorescent particles is 100: 10-150, and may be selected as 100: 50 or 100: 100 as a preferred scheme.
The second rubber powder layer covers the first rubber powder layer and completely wraps the first rubber powder layer; in this embodiment, the second adhesive layer is a mixture of a transparent adhesive medium and yellow fluorescent particles, wherein a weight ratio of the transparent adhesive medium to the yellow fluorescent particles is 100: 40-60, and preferably, a weight ratio of the transparent adhesive medium to the yellow fluorescent particles is 100: 50.
And the second adhesive powder layer can be doped with partial green fluorescent particles, so that the blue light generated by the blue LED sub-chip and the ultraviolet light generated by the ultraviolet LED sub-chip generate green light when the green fluorescent particles are subjected to laser. Preferably, the mass ratio of the green fluorescent particles to the yellow fluorescent particles may be set to 1: 1.
The blue light and the ultraviolet light emitted by the blue light LED sub-wafer and the ultraviolet LED sub-wafer are converted into spectrums matched with the photosynthesis curve through the fluorescent particles in the first adhesive powder layer and the second adhesive powder layer, and the light source is suitable for illumination requirements of different growth stages of plant growth.
The high-voltage LED wafer set is a high-voltage alternating current LED wafer set, the high-voltage alternating current LED wafer set comprises a plurality of wafer strings which are connected in parallel in an opposite direction, and the wafer strings are provided with different numbers of sub-wafers which are connected in series; the sub-chip comprises a blue light LED sub-chip and/or an ultraviolet LED sub-chip;
when the wafers are connected in series into the power supply circuit, the positive ends of a part of the wafer strings are connected with the first power supply connecting end, and the negative ends of the wafer strings are connected with the second power supply connecting end; the negative end of the other part of the wafer string is connected with the first power supply connecting end, and the negative end of the other part of the wafer string is connected with the second power supply connecting end.
The light emitted by the blue light LED sub-chip is blue light with the dominant wavelength range of 400nm to 480nm, red fluorescent particles and yellow fluorescent particles of the first adhesive powder layer and the second adhesive powder layer are excited by the blue light respectively to generate red light with the dominant wavelength range of 600nm to 680nm and green light with the dominant wavelength range of 490nm to 590nm, and the unexcited blue light and the light converted by excitation form a spectrum matched with the spectrum characteristics of the plant photosynthesis.
The light emitted by the ultraviolet LED sub-wafer is ultraviolet light with the dominant wavelength range of 320nm to 400nm, red fluorescent particles and yellow fluorescent particles of the first adhesive powder layer and the second adhesive powder layer are respectively excited by the ultraviolet light to generate red light with the dominant wavelength range of 600nm to 680nm and green light with the dominant wavelength range of 490nm to 590nm, and the un-excited ultraviolet light and the light converted by excitation form a spectrum which accords with the characteristics of a plant photosynthesis curve;
in this embodiment, the weight ratio of the transparent adhesive medium and the red fluorescent particles of the first adhesive powder layer, and the thickness of the first adhesive powder layer are controlled; meanwhile, the weight ratio of the transparent adhesive medium of the second adhesive powder layer to the yellow fluorescent particles and the thickness of the second adhesive powder layer are controlled, so that the ratio of the red light to the blue light photons emitted by the high-voltage alternating-current LED light source for plant light supplement in unit time is 65-95: 5-35; or the ratio of the number of photons of the red light, the blue light and the green light emitted in unit time is 65-95: 5-25: 5-20; or the ratio of the red light, the blue light and the ultraviolet light emitted in unit time is 70-95: 5-25: 1-5.
Preferably, the thickness of the first adhesive powder layer may be set to 0.6mm-1.0 mm; the thickness of the second glue powder layer may be set to 1cm to 1.5cm so that the ratio of photon flux densities is within the above range.
And blue fluorescent particles are doped in the first adhesive powder layer and/or the second adhesive powder layer, so that the ultraviolet LED sub-chip can generate blue light with the dominant wavelength range of 400nm to 480nm by the blue fluorescent particles, and when the proportion of the ultraviolet LED sub-chip to the total LED sub-chip is larger, the number of ultraviolet photons is reduced and the number of blue photons is increased by the blue light generated by the blue fluorescent particles.
Preferably, the content of the blue fluorescent particles in the first adhesive powder layer and the second adhesive powder layer may be 10% to 30% of the total weight of the first adhesive powder layer and the second adhesive powder layer.
The high-voltage alternating current LED light source for plant light supplement of the present embodiment further includes a rectifier circuit electrically coupled to the high-voltage alternating current LED light source to provide an alternating current voltage source of rectified alternating current voltage for the high-voltage alternating current LED chip set.
In the embodiment, the sub-wafer is a forward-mounted LED wafer, and the forward-mounted LED wafer comprises a substrate layer, an N-GaN layer, a light emitting layer, a P-GaN layer and a transparent conducting layer which are sequentially stacked on the substrate layer; the positive LED wafer is also provided with a P electrode and an N electrode, the P electrode is arranged on the transparent conducting layer, the N electrode is arranged on the N-GaN layer, and the sub-wafers are electrically connected through an interconnection electrode; grooves are arranged among the sub-wafers so as to enable the LED sub-wafers to be electrically isolated, and insulating layers are arranged in the grooves.
The normally-installed LED chip is driven by an external alternating current voltage, and the driving voltage is equal to or close to an external AC working voltage.
When all the sub-chips of the high-voltage alternating current LED wafer group are fixed on the substrate, all the sub-chips can be independent LED chips, and all the LED chips are electrically connected through a circuit on the substrate or through a lead.
Or the high-voltage alternating current LED wafer set is a single chip, the high-voltage alternating current LED wafer set comprises a substrate and sub-wafers formed on the substrate, and the sub-wafers are interconnected through a connecting circuit formed on the substrate.
The substrate layer may be a base made of aluminum oxide (Al2O3), silicon carbide (SiC), zinc oxide (ZnO), silicon, gallium arsenide (GaAs), gallium phosphide (GaP), lithium/aluminum oxide (LiAl2O3), Boron Nitride (BN), aluminum nitride (AlN), or gallium nitride (GaN), and is selected according to the material of a semiconductor layer to be formed on the substrate. If a gallium nitride (GaN) based semiconductor layer is formed, the substrate may be an aluminum oxide (Al2O3) or silicon carbide (SiC) matrix. A buffer layer may be interposed between the substrate and each wafer. The buffer layer may be used to reduce lattice mismatch between the substrate layer and subsequent layers during crystal growth. For example, the buffer layer may be a gallium nitride (GaN) or aluminum nitride (AlN) thin film.
Or the sub-wafer is a flip LED wafer which comprises a substrate layer, an N-GaN layer, a light emitting layer, a P-GaN layer and a transparent conducting layer, wherein the N-GaN layer, the light emitting layer, the P-GaN layer and the transparent conducting layer are sequentially stacked below the substrate layer; the flip LED chip is also provided with a P electrode pad and an N electrode pad, the P electrode pad and the N electrode pad are arranged on the same side of the chip, the P electrode pad is arranged on the transparent conducting layer, the N electrode pad is arranged on the N-GaN layer, and the P electrode pad and the N electrode pad are mutually electrically isolated; each LED wafer is inversely welded on the substrate and is interconnected through the printed circuit on the substrate; and grooves are arranged among the LED sub-wafers so as to enable the LED sub-wafers to be electrically isolated, and insulating layers are arranged in the grooves.
In this embodiment, in consideration of the fact that part of the fluorescent particles need to work in a low-temperature environment, a heat insulation layer may be disposed between the first adhesive powder layer and the LED sub-chip; and, transparent resin, silica gel and other layers with better heat dissipation performance can be arranged between the first rubber powder layer and the second rubber powder layer.
The high-voltage alternating-current LED light source has high working voltage, the working voltage of a packaged finished product is easy to approach to the commercial power, the conversion efficiency of a driving power supply is improved, and the cost of the driving power supply is reduced; in addition, the high-voltage alternating current LED light source reduces the die bonding and bonding quantity of the chip, and is beneficial to reducing the packaging cost.
Since a general LED must be driven by direct current, an AC/DC converter needs to be added between alternating current and the LED to realize direct current driving of the LED. The ACLED lamp can be directly connected with commercial power without a rectifier transformer, so that the volume and the weight of the LED are reduced, the space utilization rate is improved, the cost of the whole lamp is reduced, 15 to 30 percent of power loss in alternating current-direct current conversion is saved, and the luminous efficiency of the LED lamp is improved.
Compared with a high-voltage diode which is generally realized by connecting a plurality of light-emitting diodes in series in a routing mode, the high-voltage alternating current LED light source for plant light supplement can obtain lower thermal resistance, and a smaller heat dissipation module can be adopted in the manufacture of a lamp.
The high-voltage LED sub-wafer is driven by low current, so that the reliability of a high-voltage LED device is improved, and the line loss in the application process is reduced: meanwhile, the design requirements on a heat dissipation shell and a heat dissipation system can be greatly reduced, and the packaging cost is reduced.
The high-voltage alternating-current LED light source for plant light supplement has two advantages: firstly, the driving cost and the weight of the LED lighting lamp are effectively reduced; secondly, high voltage, the low current work reduces and generates heat to reduce the requirement to cooling system, the lamps and lanterns structure can save heat radiation material.
Meanwhile, the high-voltage alternating current LED light source for plant light supplement can work only by the high-voltage linear constant current source, and the high-voltage linear constant current source is free of a transformer and an electrolytic capacitor, so that the service life problems of a driving power supply and the electrolytic capacitor of a common LED are solved.
The high-voltage alternating current LED light source for plant light supplement is adopted to develop lighting products, a driving power supply can be greatly simplified, and the overall power consumption can be greatly reduced, so that the design requirement of a radiating shell is greatly reduced, and the cost of a lighting lamp is effectively reduced.
Example 2
The embodiment provides a high-voltage alternating current LED light source for plant light supplement, which is different from embodiment 1 in that infrared fluorescent particles are used to replace yellow fluorescent particles, and at this time:
the weight ratio of the transparent adhesive medium to the infrared fluorescent particles is 100: 40-60, and preferably, the weight ratio of the transparent adhesive medium to the infrared fluorescent particles is 100: 50.
In this embodiment, the weight ratio of the transparent adhesive medium and the red fluorescent particles of the first adhesive powder layer, and the thickness of the first adhesive powder layer are controlled; meanwhile, the weight ratio of the transparent adhesive medium of the second adhesive powder layer to the infrared fluorescent particles and the thickness of the second adhesive powder layer are controlled, so that the ratio of the number of red light photons to the number of blue light photons emitted by the high-voltage alternating-current LED light source for plant light supplement in unit time is 70-95: 5-30; or the ratio of the number of photons of the red light, the blue light and the infrared light emitted in unit time is 65-95: 5-250: 1-15; or the ratio of the red light, the blue light and the ultraviolet light emitted in unit time is 70-95: 5-25: 1-10.
And the second adhesive powder layer can be doped with partial green fluorescent particles, so that the blue light generated by the blue LED sub-chip and the ultraviolet light generated by the ultraviolet LED sub-chip generate green light when the green fluorescent particles are subjected to laser. Preferably, the mass ratio of the green fluorescent particles to the infrared fluorescent particles can be set to 1: 1.
Preferably, the thickness of the first adhesive powder layer may be set to 0.6mm-1.0 mm; the thickness of the second glue powder layer may be set to 1cm to 1.5cm so that the ratio of photon flux densities is within the above range.
The blue light and the ultraviolet light emitted by the blue light LED sub-wafer and the ultraviolet LED sub-wafer are converted into spectrums matched with the photosynthesis curve through the fluorescent particles in the first adhesive powder layer and the second adhesive powder layer, and the light source is suitable for illumination requirements of different growth stages of plant growth.
The light emitted by the blue light LED sub-wafer is blue light with the dominant wavelength range of 400nm to 480nm, red fluorescent particles and infrared fluorescent particles of the first adhesive powder layer and the second adhesive powder layer are excited by the LED blue light respectively to generate red light with the dominant wavelength range of 600nm to 680nm and infrared light with the dominant wavelength range of 700nm to 750nm, and the unexcited blue light and the light converted by excitation form a spectrum which accords with the characteristics of a plant photosynthesis curve and is beneficial to regulation and control of plant morphology and flowering phase.
The light emitted by the ultraviolet LED sub-wafer is ultraviolet light with the dominant wavelength range of 320nm to 400nm, red silver light particles and infrared fluorescent particles of the first adhesive powder layer and the second adhesive powder layer are excited by the ultraviolet light respectively to generate red light with the dominant wavelength range of 600nm to 680nm and infrared light with the dominant wavelength range of 700nm to 700nm, and the un-excited ultraviolet light and the light converted by excitation form a spectrum which accords with the characteristics of a plant photosynthesis curve and is beneficial to regulation and control of plant morphology and flowering phase.
The blue light LED sub-chip has a light emitting peak in the range of 400nm to 480nm, or a multi-wavelength blue light LED chip combination with a light emitting peak in the range of 400nm to 480 nm.
The high-voltage LED wafer set is a high-voltage alternating current LED wafer set, the high-voltage alternating current LED wafer set comprises a plurality of wafer strings which are connected in parallel in an opposite direction, and the wafer strings are provided with different numbers of sub-wafers which are connected in series; the sub-chip comprises a blue light LED sub-chip and/or an ultraviolet LED sub-chip;
when the wafers are connected in series into the power supply circuit, the positive ends of a part of the wafer strings are connected with the first power supply connecting end, and the negative ends of the wafer strings are connected with the second power supply connecting end; the negative end of the other part of the wafer string is connected with the first power supply connecting end, and the negative end of the other part of the wafer string is connected with the second power supply connecting end.
The red fluorescent particles adopt YAGG and YAGG: ce3+、YAG：Eu2+Nitride red phosphor particles, Mn4+Doped K2SiF6And K2SnF6One or a combination of deep red fluorescent particles.
The infrared fluorescent particles are Cr3+、Ce3+、Yb3+One or a combination of multiply-doped YAG near-infrared fluorescent particles, such as Y3Al5O12：Cr，Ce，Yb。
The transparent adhesive medium is one or a combination of silica gel, epoxy resin, polymethyl methacrylate (PMMA), Polycarbonate (PC) or photosensitive colloid. According to different requirements, corresponding glue is adopted in the die bonding process and the encapsulating process.
In this embodiment, in consideration of the fact that part of the fluorescent particles need to work in a low-temperature environment, a heat insulation layer may be disposed between the first adhesive powder layer and the LED sub-chip; and, transparent resin, silica gel and other layers with better heat dissipation performance can be arranged between the first rubber powder layer and the second rubber powder layer.
Example 3
The present embodiment provides an illumination device, which includes the high-voltage ac LED light source for plant light supplement in embodiments 1 to 2.
And the high-voltage alternating current LED light source is connected to the first power supply connecting end and the second power supply connecting end of an external power supply after being connected in series to the inverse parallel sub-chip string through a resistor.
The illumination device further comprises an electrical connector; the electric connector is connected with the high-voltage LED wafer group and communicated with an external AC power supply.
The substrate can be prepared from one of aluminum nitride, a copper substrate, a copper alloy substrate, aluminum oxide, an epoxy resin molding compound, silicon carbide, diamond, silicon, a graphite aluminum substrate, an aluminum iron alloy substrate, a high-thermal-conductivity plastic substrate or an aluminum-coated plastic substrate, wherein the opaque substrate is prepared from materials such as aluminum nitride, a nitride shed, aluminum oxide, an epoxy resin molding compound, silicon carbide, diamond, silicon, graphite or a nano carbon material; the transparent substrate is made of transparent glass, transparent sapphire, transparent quartz glass, transparent ceramic or transparent plastic and the like.
Wherein the illumination device is used in one or more of the following applications: artificial climate boxes, illumination incubators, plant factories, tissue culture rooms, facility agriculture and the like.
The sequence of the above embodiments is only for convenience of description and does not represent the advantages and disadvantages of the embodiments.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (10)

1. A high-voltage alternating current LED light source for plant light supplement is characterized by comprising a substrate, a high-voltage LED wafer group, a first adhesive powder layer and a second adhesive powder layer;
the high-voltage LED wafer set is a high-voltage alternating current LED wafer set, the high-voltage alternating current LED wafer set comprises a plurality of wafer strings which are connected in parallel in an opposite direction, and the wafer strings are provided with different numbers of sub-wafers which are connected in series; the sub-chip comprises a blue light LED sub-chip and/or an ultraviolet LED sub-chip;
when the wafers are connected in series into the power supply circuit, the positive ends of a part of the wafer strings are connected with the first power supply connecting end, and the negative ends of the wafer strings are connected with the second power supply connecting end; the negative end of the other part of the wafer string is connected with the first power supply connecting end, and the negative end of the other part of the wafer string is connected with the second power supply connecting end;
a first adhesive powder layer covers the upper part of the LED sub-wafer; the first adhesive powder layer fixes the LED sub-chip on the substrate and is a mixture of a transparent adhesive medium and red fluorescent particles;
the second rubber powder layer covers the first rubber powder layer and completely wraps the first rubber powder layer; the second adhesive powder layer is a mixture of a transparent adhesive medium and yellow fluorescent particles;
controlling the weight ratio of the transparent adhesive medium of the first adhesive powder layer to the red fluorescent particles and the thickness of the first adhesive powder layer; meanwhile, the weight ratio of the transparent adhesive medium of the second adhesive powder layer to the yellow fluorescent particles and the thickness of the second adhesive powder layer are controlled, so that the ratio of the red light to the blue light photons emitted by the high-voltage alternating-current LED light source for plant light supplement in unit time is 65-95: 5-35; or the ratio of the number of photons of the red light, the blue light and the green light emitted in unit time is 65-95: 5-25: 5-20; or the ratio of the red light, the blue light and the ultraviolet light emitted in unit time is 70-95: 5-25: 1-5.
2. A high-voltage alternating current LED light source for plant light supplement is characterized by comprising a substrate, a high-voltage LED wafer group, a first adhesive powder layer and a second adhesive powder layer;
the high-voltage LED wafer set is a high-voltage alternating current LED wafer set, the high-voltage alternating current LED wafer set comprises a plurality of wafer strings which are connected in parallel in an opposite direction, and the wafer strings are provided with different numbers of sub-wafers which are connected in series; the sub-chip comprises a blue light LED sub-chip and/or an ultraviolet LED sub-chip;
when the wafers are connected in series into the power supply circuit, the positive ends of a part of the wafer strings are connected with the first power supply connecting end, and the negative ends of the wafer strings are connected with the second power supply connecting end; the negative end of the other part of the wafer string is connected with the first power supply connecting end, and the negative end of the other part of the wafer string is connected with the second power supply connecting end;
a first adhesive powder layer covers the upper part of the LED sub-wafer; the first adhesive powder layer fixes the LED sub-chip on the substrate and is a mixture of a transparent adhesive medium and red fluorescent particles;
the second rubber powder layer covers the first rubber powder layer and completely wraps the first rubber powder layer; the second adhesive powder layer is a mixture of a transparent adhesive medium and infrared fluorescent particles;
controlling the weight ratio of the transparent adhesive medium of the first adhesive powder layer to the red fluorescent particles and the thickness of the first adhesive powder layer; meanwhile, the weight ratio of the transparent adhesive medium of the second adhesive powder layer to the infrared fluorescent particles and the thickness of the second adhesive powder layer are controlled, so that the ratio of the number of red light photons to the number of blue light photons emitted by the high-voltage alternating-current LED light source for plant light supplement in unit time is 70-95: 5-30; or the ratio of the number of photons of the red light, the blue light and the infrared light emitted in unit time is 65-95: 5-25: 1-15; or the ratio of the red light, the blue light and the ultraviolet light emitted in unit time is 70-95: 5-25: 1-10.
3. A high-voltage ac LED light source for plant light supplement as claimed in claim 1 or 2, wherein the blue light and the ultraviolet light emitted from the blue LED sub-chip and the ultraviolet LED sub-chip are converted into spectra matching the photosynthesis curve by the fluorescent particles in the first and second adhesive powder layers, so as to meet the illumination requirements of different growth stages of plant growth;
when the second gelatine powder layer comprises yellow fluorescent particles, light emitted by the blue LED sub-chip is blue light with dominant wavelength range of 400nm to 480nm, red fluorescent particles and yellow fluorescent particles of the first gelatine powder layer and the second gelatine powder layer are excited by the blue light respectively to generate red light with dominant wavelength range of 600nm to 680nm and green light with dominant wavelength range of 490nm to 590nm, and the un-excited blue light and the light converted by excitation form a spectrum matched with the spectral characteristics of photosynthesis of plants;
when the second gelatine powder layer comprises infrared fluorescent particles, light emitted by the blue light LED sub-chip is blue light with the dominant wavelength range of 400nm to 480nm, red fluorescent particles and infrared fluorescent particles of the first gelatine powder layer and the second gelatine powder layer are excited by the LED blue light respectively to generate red light with the dominant wavelength range of 600nm to 680nm and infrared light with the dominant wavelength range of 700nm to 750nm, and the un-excited blue light and the light converted by excitation form a spectrum which accords with the plant photosynthesis curve characteristics and is beneficial to regulation and control of plant morphology and flowering phase;
when the second gelatine powder layer comprises yellow fluorescent particles, the light emitted by the ultraviolet LED sub-wafer is ultraviolet light with the dominant wavelength range of 320nm to 400nm, the red fluorescent particles and the yellow fluorescent particles of the first gelatine powder layer and the second gelatine powder layer are respectively excited by the ultraviolet light to generate red light with the dominant wavelength range of 600nm to 680nm and green light with the dominant wavelength range of 490nm to 590nm, and the un-excited ultraviolet light and the light converted by excitation form a spectrum which accords with the characteristic of the photosynthesis curve of the plant;
when the second gelatine powder layer comprises infrared fluorescent particles, light emitted by the ultraviolet LED sub-wafer is ultraviolet light with the dominant wavelength range of 320nm to 400nm, red silver light particles and infrared fluorescent particles of the first gelatine powder layer and the second gelatine powder layer are respectively excited by the ultraviolet light to generate red light with the dominant wavelength range of 600nm to 680nm and infrared light with the dominant wavelength range of 700nm to 700nm, and the un-excited ultraviolet light and the light converted by excitation form a spectrum which accords with the plant photosynthesis curve characteristics and is beneficial to regulation and control of plant shapes and flowering phases.
4. The high-voltage alternating-current LED light source for plant light supplement of claim 3, wherein the blue LED sub-chip is an LED sub-chip having a light emission peak in a range of 400nm to 480nm or a combination of LED chips with different wavelengths, and the ultraviolet LED sub-chip is an LED sub-chip having a light emission peak in a range of 320nm to 400nm or a combination of LED chips with different wavelengths.
5. The high voltage AC LED light source for supplementing light to plants as claimed in claim 4, further comprising a rectifier circuit electrically coupled to the AC voltage source for providing rectified AC voltage to said AC LED chip set.
6. The high-voltage alternating-current LED light source for plant light supplement of claim 5, wherein the high-voltage alternating-current LED chip set is driven by an external alternating-current voltage, and the driving voltage is equal to or close to an external AC working voltage.
7. A lighting device comprising a high voltage AC LED light source for supplementing light to a plant according to any one of claims 1 to 6.
8. The illumination device according to claim 7, wherein the high voltage ac LED light source is connected to the first and second power connection terminals of the external power source through a resistor connected in series to the anti-parallel sub-chip string.
9. The illumination device according to claim 8, further comprising an electrical connector;
the electric connector is connected with the high-voltage LED wafer group and communicated with an external AC power supply.
10. A high voltage ac LED light source according to claim 1 and a lighting device according to claim 7, wherein the light source and lighting device are used in one or more of the following applications: artificial climate boxes, illumination incubators, plant factories, tissue culture rooms and protected agriculture.
CN201910772067.XA 2019-08-12 2019-08-12 High-voltage alternating-current LED light source for plant light supplement and illumination equipment Pending CN112397489A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910772067.XA CN112397489A (en) 2019-08-12 2019-08-12 High-voltage alternating-current LED light source for plant light supplement and illumination equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910772067.XA CN112397489A (en) 2019-08-12 2019-08-12 High-voltage alternating-current LED light source for plant light supplement and illumination equipment

Publications (1)

Publication Number Publication Date
CN112397489A true CN112397489A (en) 2021-02-23

Family

ID=74603660

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910772067.XA Pending CN112397489A (en) 2019-08-12 2019-08-12 High-voltage alternating-current LED light source for plant light supplement and illumination equipment

Country Status (1)

Country Link
CN (1) CN112397489A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023005685A1 (en) * 2019-06-19 2023-02-02 Fujian Sananbio Technology Co., Ltd. Method for promoting levels of medicinal ingredients in cannabis

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023005685A1 (en) * 2019-06-19 2023-02-02 Fujian Sananbio Technology Co., Ltd. Method for promoting levels of medicinal ingredients in cannabis

Similar Documents

Publication Publication Date Title
US8450748B2 (en) Solid state light emitting device
KR101646633B1 (en) Light emitting device
US20130069099A1 (en) Chip-on-board led structure
WO2020103671A1 (en) Led light source for plant light supplementation and lamp using
CN101615612A (en) The encapsulating structure of multi-chip LED
KR101396583B1 (en) Warm white light emitting apparatus and back light module comprising the same
TWI506818B (en) Light-emitting module and alternate current light-emitting device
CN112397489A (en) High-voltage alternating-current LED light source for plant light supplement and illumination equipment
CN112397490A (en) Plant light filling is with just installing high pressure LED light source and illumination equipment
TW201225355A (en) Light emitting diode
GB2470802A (en) LED cooling arrangement
CN203223777U (en) Illuminating device
JP6062675B2 (en) Light emitting device and lighting device
CN206401317U (en) A kind of full-spectrum LED encapsulating structure of unstressed configuration powder
CN111668199B (en) Plant light filling is with just installing high pressure LED light source and illumination equipment
CN111668360B (en) Flip-chip high-voltage LED chip set, LED light source for plant light supplement and illumination equipment
CN111668198B (en) Forward-mounted high-voltage LED chip set, LED light source for plant light supplement and illumination equipment
CN111668200B (en) Inverted high-voltage LED light source and illumination equipment for plant light supplement
CN201936915U (en) LED (light-emitting diode) encapsulating structure and LED module thereof
CN112397488A (en) High-voltage alternating current LED chip set, high-voltage alternating current LED light source and illumination equipment
US9054278B2 (en) Lighting apparatuses and driving methods regarding to light-emitting diodes
CN112399667A (en) High-voltage alternating-current LED light source for plant light supplement and illumination equipment
CN103839511B (en) Light-emitting device and driving method on light emitting diode
WO2020177359A1 (en) High voltage led chip set, led light source for plant light supplementation and illuminating device
CN110211949A (en) A kind of high lumen density height is aobvious to refer to white LED light source mould group and packaging method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination