CN102412230B - Inductance ground shielding structure for radio frequency process - Google Patents
Inductance ground shielding structure for radio frequency process Download PDFInfo
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- CN102412230B CN102412230B CN201110385996.9A CN201110385996A CN102412230B CN 102412230 B CN102412230 B CN 102412230B CN 201110385996 A CN201110385996 A CN 201110385996A CN 102412230 B CN102412230 B CN 102412230B
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Abstract
The invention discloses an inductance ground shielding structure for a radio frequency process. The inductance ground shielding structure comprises four grounding wires, wherein the four grounding wires are distributed in a crossed form, and adjacent inner ends of the grounding wires are not contacted; and a plurality of blocking wires are led out of a plane where each grounding wire is positioned by each grounding wire, and are vertical to the grounding wire respectively without intersecting. In the ground shielding structure disclosed by the invention, grounding wires are led out of the center of a ground shielding pattern for grounding, and the centers of the grounding wires are disconnected, so that current interference between patterns is reduced; and meanwhile, a plurality of blocking wires are led out by each grounding wire and are vertical to one another, so that an eddy current channel of a lining is blocked, the influence of the vortex consumption of the lining on inductance is lowered, and the aim of increasing the inductance quality factor in an ordinary radio frequency process is fulfilled.
Description
Technical field
The present invention relates to semiconductor integrated circuit and manufacture field, belong to a kind of shielding construction inductively for radio frequency process.
Background technology
On-chip inductor is the critical elements in radio-frequency (RF) CMOS or BiCMOS integrated circuit, is widely used in the various radio-frequency (RF) circuit module such as voltage controlled oscillator, low noise amplifier, and wherein the quality factor of inductance have important impact to the performance of circuit.
On-chip inductor has the energy loss mechanism of various ways, comprise that energy loss, skin effect, proximity effect, top-level metallic coil that the resistance of spiral inductance itself brings are transmitted to displacement current loss between substrate and substrate eddy current effect etc., these loss mechanisms can cause its quality factor to decline.
The resistance substrate rate adopting in common radio frequency process is lower, generally at 8 ohmcm～20 ohmcms, the impact that the inductance of making on low-resistivity substrate is subject to substrate eddy current effect is larger, and the common practice is on substrate, to make ground shielding construction to reduce substrate eddy current.But conventional ground shielding construction carrys out ground connection by ground loop, as shown in Figure 1, connects into ring earthing by making a circle in week, can on ground loop, there is small eddy current like this, affect the quality factor of inductance.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of shielding construction inductively for radio frequency process, can reduce the impact of eddy current loss on inductance, improves the inductance quality factor in common radio frequency process.
For solving the problems of the technologies described above, shielding construction inductively for radio frequency process of the present invention, comprise four earth connections, described four earth connections are crosswise distribution and its close one end, inside does not contact mutually, every earth connection is planar drawn many Resistance level at it, and described Resistance level is respectively perpendicular to the earth connection at place and mutually disjoint.
Further, be positioned at the Resistance level that the vertical earth connection of two horizontal grounding lines top draws and extend to the right, the Resistance level that the vertical earth connection of below is drawn is extended left; Be positioned at the Resistance level that the horizontal grounding line of two vertical earth connection lefts draws and upwards extend, the Resistance level that right-hand horizontal grounding line is drawn is to downward-extension.
Or, being positioned at the Resistance level that the vertical earth connection of two horizontal grounding lines top draws and extending left, the Resistance level that the vertical earth connection of below is drawn is extended to the right; Be positioned at Resistance level that the horizontal grounding line of two vertical earth connection lefts draws to downward-extension, the Resistance level that right-hand horizontal grounding line is drawn is upwards extended.
Ground of the present invention shielding construction is by the center outconnector ground connection from ground shielding figure, the center of earth connection disconnects, reduced the current interference between figure, simultaneously, every earth connection is drawn many Resistance level, and the Resistance level that every earth connection is drawn is orthogonal, has hindered the path of substrate eddy current, reduce the impact of eddy current loss on inductance, reached the object that improves the inductance quality factor in common radio frequency process.
Accompanying drawing explanation
Below in conjunction with accompanying drawing and embodiment, the present invention is further detailed explanation:
Fig. 1 is the schematic diagram of known shielding construction inductively;
Fig. 2 is a kind of schematic diagram of shielding construction inductively in the present invention;
Fig. 3 is the another kind of schematic diagram of shielding construction inductively in the present invention.
Wherein description of reference numerals is as follows:
1 is earth connection; 2 Resistance level.
Embodiment
Shielding construction inductively for radio frequency process of the present invention, comprise four earth connections 1, described four earth connections 1 are crosswise distribution and its close one end, inside does not contact mutually, every earth connection 1 is planar drawn many Resistance level 2 at it, and described Resistance level 2 is respectively perpendicular to the earth connection 1 at place and mutually disjoint.
As shown in Figure 2, be positioned at the Resistance level 2 that the vertical earth connection of two horizontal grounding lines top draws and extend to the right, the Resistance level 2 that the vertical earth connection of below is drawn is extended left; Be positioned at the Resistance level 2 that the horizontal grounding line of two vertical earth connection lefts draws and upwards extend, the Resistance level 2 that right-hand horizontal grounding line is drawn is to downward-extension.
As shown in Figure 3, be positioned at the Resistance level 2 that the vertical earth connection of two horizontal grounding lines top draws and extend left, the Resistance level 2 that the vertical earth connection of below is drawn is extended to the right; Be positioned at Resistance level 2 that the horizontal grounding line of two vertical earth connection lefts draws to downward-extension, the Resistance level 2 that right-hand horizontal grounding line is drawn is upwards extended.
This ground shielding construction figure can form with various materials, as deep trench isolation layer, N-shaped and p-type doped layer, poly layer etc.Width and the spacing of ground shielding figure can define according to the minimum design rule of technique level, and are applicable to the inductance of various shapes and structure.
Ground of the present invention shielding construction is from the center outconnector ground connection of ground shielding figure, not to draw earth connection from ground loop, can reduce like this impact of substrate eddy current, and the center of earth connection disconnects, reduced the current interference between ground shielding figure, simultaneously, every earth connection is drawn many Resistance level, the Resistance level that every earth connection is drawn is orthogonal, hindered the path of substrate eddy current, reduce the impact of eddy current loss on inductance, reached the object that improves the inductance quality factor in common radio frequency process.
By specific embodiment, the present invention is had been described in detail above, but these are not construed as limiting the invention.Without departing from the principles of the present invention, those skilled in the art also can shield over the ground graphic structure etc. and make many distortion and equivalent replacement, and these also should be considered as protection scope of the present invention.
Claims (3)
1. the shielding construction inductively for radio frequency process, it is characterized in that: comprise four earth connections, described four earth connections are crosswise distribution and its close one end, inside does not contact mutually, every earth connection is planar drawn many Resistance level at it, and described Resistance level is respectively perpendicular to the earth connection at place and mutually disjoint.
2. the shielding construction inductively for radio frequency process according to claim 1, is characterized in that: be positioned at the Resistance level that the vertical earth connection of two horizontal grounding lines top draws and extend to the right, the Resistance level that the vertical earth connection of below is drawn is extended left; Be positioned at the Resistance level that the horizontal grounding line of two vertical earth connection lefts draws and upwards extend, the Resistance level that right-hand horizontal grounding line is drawn is to downward-extension.
3. the shielding construction inductively for radio frequency process according to claim 1, is characterized in that: be positioned at the Resistance level that the vertical earth connection of two horizontal grounding lines top draws and extend left, the Resistance level that the vertical earth connection of below is drawn is extended to the right; Be positioned at Resistance level that the horizontal grounding line of two vertical earth connection lefts draws to downward-extension, the Resistance level that right-hand horizontal grounding line is drawn is upwards extended.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110385996.9A CN102412230B (en) | 2011-11-28 | 2011-11-28 | Inductance ground shielding structure for radio frequency process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110385996.9A CN102412230B (en) | 2011-11-28 | 2011-11-28 | Inductance ground shielding structure for radio frequency process |
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| Publication Number | Publication Date |
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| CN102412230A CN102412230A (en) | 2012-04-11 |
| CN102412230B true CN102412230B (en) | 2014-04-16 |
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| CN201110385996.9A Active CN102412230B (en) | 2011-11-28 | 2011-11-28 | Inductance ground shielding structure for radio frequency process |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102738125B (en) * | 2012-06-29 | 2015-01-28 | 杭州电子科技大学 | New fractal PFS structure |
| CN104241242B (en) * | 2013-06-09 | 2017-12-29 | 中芯国际集成电路制造(上海)有限公司 | Earth shield structure and semiconductor devices |
| CN104934408B (en) * | 2014-03-20 | 2017-11-24 | 中芯国际集成电路制造(上海)有限公司 | A kind of inductor with metal charge structure |
| CN105225812B (en) * | 2014-06-20 | 2017-11-21 | 中芯国际集成电路制造(上海)有限公司 | Pattern earth shield structure and inductor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2672876Y (en) * | 2003-07-28 | 2005-01-19 | 威盛电子股份有限公司 | Earth shield structure |
| WO2006127851A2 (en) * | 2005-05-24 | 2006-11-30 | The Trustees Of Columbia University In The City Of New York | Systems and methods for reducing circuit area |
| CN101060027A (en) * | 2007-05-15 | 2007-10-24 | 东南大学 | Micro-electromechanical inductor for suppressing the substrate eddy effect and its manufacture method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050247999A1 (en) * | 2003-05-29 | 2005-11-10 | Kazuyasu Nishikawa | Semiconductor device |
| WO2005008695A2 (en) * | 2003-07-23 | 2005-01-27 | Koninklijke Philips Electronics N.V. | Inductive and capacitive elements for semiconductor technologies with minimum pattern density requirements |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2672876Y (en) * | 2003-07-28 | 2005-01-19 | 威盛电子股份有限公司 | Earth shield structure |
| WO2006127851A2 (en) * | 2005-05-24 | 2006-11-30 | The Trustees Of Columbia University In The City Of New York | Systems and methods for reducing circuit area |
| CN101060027A (en) * | 2007-05-15 | 2007-10-24 | 东南大学 | Micro-electromechanical inductor for suppressing the substrate eddy effect and its manufacture method |
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| CN102412230A (en) | 2012-04-11 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140107 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140107 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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