CN102412230A - Inductance ground shielding structure for radio frequency process - Google Patents
Inductance ground shielding structure for radio frequency process Download PDFInfo
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- CN102412230A CN102412230A CN2011103859969A CN201110385996A CN102412230A CN 102412230 A CN102412230 A CN 102412230A CN 2011103859969 A CN2011103859969 A CN 2011103859969A CN 201110385996 A CN201110385996 A CN 201110385996A CN 102412230 A CN102412230 A CN 102412230A
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Abstract
The invention discloses an inductance ground shielding structure for a radio frequency process. The inductance ground shielding structure comprises four grounding wires, wherein the four grounding wires are distributed in a crossed form, and adjacent inner ends of the grounding wires are not contacted; and a plurality of blocking wires are led out of a plane where each grounding wire is positioned by each grounding wire, and are vertical to the grounding wire respectively without intersecting. In the ground shielding structure disclosed by the invention, grounding wires are led out of the center of a ground shielding pattern for grounding, and the centers of the grounding wires are disconnected, so that current interference between patterns is reduced; and meanwhile, a plurality of blocking wires are led out by each grounding wire and are vertical to one another, so that an eddy current channel of a lining is blocked, the influence of the vortex consumption of the lining on inductance is lowered, and the aim of increasing the inductance quality factor in an ordinary radio frequency process is fulfilled.
Description
Technical field
The present invention relates to semiconductor integrated circuit and make the field, belong to a kind of inductance ground shielding construction that is used for radio frequency technology.
Background technology
On-chip inductor is the critical elements in RF CMOS or the BiCMOS integrated circuit, is widely used in the various RF circuit modules such as voltage controlled oscillator, low noise amplifier, and wherein the quality factor of inductance have significant effects to the performance of circuit.
On-chip inductor has the energy loss mechanism of various ways; Comprise that energy loss, skin effect, proximity effect, top-level metallic coil that the resistance of spiral inductance itself brings are transmitted to displacement current loss and the substrate eddy current effect between the substrate etc., these loss mechanisms can cause its quality factor to descend.
The resistance substrate rate that in common radio frequency technology, adopts is lower; Generally at 8 ohmcms～20 ohmcms; The influence that the inductance of on the low-resistivity substrate, making receives the substrate eddy current effect is bigger, and the common practice is on substrate, to make the ground shielding construction to reduce the substrate eddy current.But conventional ground shielding construction comes ground connection through ground loop, and is as shown in Figure 1, connects into ring earthing through making a circle in week, can on ground loop, have small eddy current like this, influences the quality factor of inductance.
Summary of the invention
The technical problem that the present invention will solve provides a kind of inductance ground shielding construction that is used for radio frequency technology, can reduce the influence of substrate eddy current loss to inductance, improves the inductance quality factor in the common radio frequency technology.
For solving the problems of the technologies described above; The inductance ground shielding construction that is used for radio frequency technology of the present invention; Comprise four earth connections; Said four earth connections be that crosswise distributes and its near inside one end do not contact mutually, every earth connection is drawn many Resistance level in its plane, place, said Resistance level is respectively perpendicular to the earth connection at place and mutually disjoint.
Further, be positioned at the Resistance level that the vertical junction ground wire of two horizontal grounding lines top draws and extend to the right, the Resistance level that the vertical junction ground wire of below is drawn is extended left; Be positioned at the Resistance level that the horizontal grounding line of two vertical junction ground wire lefts draws and extend upward, the Resistance level that right-hand horizontal grounding line is drawn is to extending below.
Perhaps, be positioned at the Resistance level that the vertical junction ground wire of two horizontal grounding lines top draws and extend left, the Resistance level that the vertical junction ground wire of below is drawn is extended to the right; Be positioned at Resistance level that the horizontal grounding line of two vertical junction ground wire lefts draws to extending below, the Resistance level that right-hand horizontal grounding line is drawn extends upward.
Ground of the present invention shielding construction is through the center outconnector ground connection of the shielding figure from ground, and the center of earth connection is broken off, and has reduced the current interference between the figure; Simultaneously; Every earth connection is drawn many Resistance level, and the Resistance level that every earth connection is drawn is orthogonal, has hindered the path of substrate eddy current; Reduced of the influence of substrate eddy current loss, reached the purpose that improves the inductance quality factor in the common radio frequency technology inductance.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is done further detailed explanation:
Fig. 1 is the sketch map of known inductance ground shielding construction;
Fig. 2 is a kind of sketch map of inductance ground shielding construction among the present invention;
Fig. 3 is the another kind of sketch map of inductance ground shielding construction among the present invention.
Wherein description of reference numerals is following:
1 is earth connection; 2 Resistance level.
Embodiment
The inductance ground shielding construction that is used for radio frequency technology of the present invention; Comprise four earth connections 1; Said four earth connections 1 be that crosswise distributes and its near inside one end do not contact mutually; Every earth connection 1 is drawn many Resistance level 2 in its plane, place, said Resistance level 2 is respectively perpendicular to the earth connection 1 at place and mutually disjoint.
As shown in Figure 2, be positioned at the Resistance level 2 that the vertical junction ground wire of two horizontal grounding lines top draws and extend to the right, the Resistance level 2 that the vertical junction ground wire of below is drawn is extended left; Be positioned at the Resistance level 2 that the horizontal grounding line of two vertical junction ground wire lefts draws and extend upward, the Resistance level 2 that right-hand horizontal grounding line is drawn is to extending below.
As shown in Figure 3, be positioned at the Resistance level 2 that the vertical junction ground wire of two horizontal grounding lines top draws and extend left, the Resistance level 2 that the vertical junction ground wire of below is drawn is extended to the right; Be positioned at Resistance level 2 that the horizontal grounding line of two vertical junction ground wire lefts draws to extending below, the Resistance level 2 that right-hand horizontal grounding line is drawn extends upward.
This ground shielding construction figure can use various materials to form, like deep trench isolation layer, n type and p type doped layer, poly layer etc.The width of ground shielding figure and spacing can define according to the minimum design rule of technology level, and are applicable in the inductance of different shape and structure.
The center outconnector ground connection of ground of the present invention shielding construction shielding figure from ground is not to draw earth connection from ground loop, can reduce the influence of substrate eddy current like this; And the center of earth connection is broken off; Reduced the current interference between the ground shielding figure, simultaneously, every earth connection is drawn many Resistance level; The Resistance level that every earth connection is drawn is orthogonal; Hindered the path of substrate eddy current, reduced of the influence of substrate eddy current loss, reached the purpose that improves the inductance quality factor in the common radio frequency technology inductance.
More than through specific embodiment the present invention has been carried out detailed explanation, but these are not to be construed as limiting the invention.Under the situation that does not break away from the principle of the invention, those skilled in the art also can shield graphic structure etc. over the ground and make many distortion and equivalent replacement, and these also should be regarded as protection scope of the present invention.
Claims (3)
1. inductance ground shielding construction that is used for radio frequency technology; It is characterized in that: comprise four earth connections (1); Said four earth connections (1) be that crosswise distributes and its near inside one end do not contact mutually; Every earth connection (1) is drawn many Resistance level (2) at its place in plane, and said Resistance level (2) is respectively perpendicular to the earth connection (1) at place and mutually disjoint.
2. the inductance ground shielding construction that is used for radio frequency technology according to claim 1; It is characterized in that: be positioned at the Resistance level (2) that the vertical junction ground wire of two horizontal grounding lines top draws and extend to the right, the Resistance level (2) that the vertical junction ground wire of below is drawn is extended left; Be positioned at the Resistance level (2) that the horizontal grounding line of two vertical junction ground wire lefts draws and extend upward, the Resistance level (2) that right-hand horizontal grounding line is drawn is to extending below.
3. the inductance ground shielding construction that is used for radio frequency technology according to claim 1; It is characterized in that: be positioned at the Resistance level (2) that the vertical junction ground wire of two horizontal grounding lines top draws and extend left, the Resistance level (2) that the vertical junction ground wire of below is drawn is extended to the right; Be positioned at Resistance level (2) that the horizontal grounding line of two vertical junction ground wire lefts draws to extending below, the Resistance level (2) that right-hand horizontal grounding line is drawn extends upward.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110385996.9A CN102412230B (en) | 2011-11-28 | 2011-11-28 | Inductance ground shielding structure for radio frequency process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110385996.9A CN102412230B (en) | 2011-11-28 | 2011-11-28 | Inductance ground shielding structure for radio frequency process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102412230A true CN102412230A (en) | 2012-04-11 |
| CN102412230B CN102412230B (en) | 2014-04-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201110385996.9A Active CN102412230B (en) | 2011-11-28 | 2011-11-28 | Inductance ground shielding structure for radio frequency process |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102738125A (en) * | 2012-06-29 | 2012-10-17 | 杭州电子科技大学 | New fractal PFS structure |
| CN104241242A (en) * | 2013-06-09 | 2014-12-24 | 中芯国际集成电路制造(上海)有限公司 | Grounded shield structure and semiconductor device |
| CN104934408A (en) * | 2014-03-20 | 2015-09-23 | 中芯国际集成电路制造(上海)有限公司 | Inductor having metal filler structure |
| CN105225812A (en) * | 2014-06-20 | 2016-01-06 | 中芯国际集成电路制造(上海)有限公司 | Pattern earth shield structure and inductor |
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| CN2672876Y (en) * | 2003-07-28 | 2005-01-19 | 威盛电子股份有限公司 | Earth shield structure |
| CN1666342A (en) * | 2003-05-29 | 2005-09-07 | 三菱电机株式会社 | Semiconductor device |
| CN1826670A (en) * | 2003-07-23 | 2006-08-30 | 皇家飞利浦电子股份有限公司 | Inductive and capacitive elements for semiconductor technologies with minimum pattern density requirements |
| WO2006127851A2 (en) * | 2005-05-24 | 2006-11-30 | The Trustees Of Columbia University In The City Of New York | Systems and methods for reducing circuit area |
| CN101060027A (en) * | 2007-05-15 | 2007-10-24 | 东南大学 | Micro-electromechanical inductor for suppressing the substrate eddy effect and its manufacture method |
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2011
- 2011-11-28 CN CN201110385996.9A patent/CN102412230B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1666342A (en) * | 2003-05-29 | 2005-09-07 | 三菱电机株式会社 | Semiconductor device |
| CN1826670A (en) * | 2003-07-23 | 2006-08-30 | 皇家飞利浦电子股份有限公司 | Inductive and capacitive elements for semiconductor technologies with minimum pattern density requirements |
| CN2672876Y (en) * | 2003-07-28 | 2005-01-19 | 威盛电子股份有限公司 | Earth shield structure |
| WO2006127851A2 (en) * | 2005-05-24 | 2006-11-30 | The Trustees Of Columbia University In The City Of New York | Systems and methods for reducing circuit area |
| CN101060027A (en) * | 2007-05-15 | 2007-10-24 | 东南大学 | Micro-electromechanical inductor for suppressing the substrate eddy effect and its manufacture method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102738125A (en) * | 2012-06-29 | 2012-10-17 | 杭州电子科技大学 | New fractal PFS structure |
| CN104241242A (en) * | 2013-06-09 | 2014-12-24 | 中芯国际集成电路制造(上海)有限公司 | Grounded shield structure and semiconductor device |
| CN104934408A (en) * | 2014-03-20 | 2015-09-23 | 中芯国际集成电路制造(上海)有限公司 | Inductor having metal filler structure |
| CN104934408B (en) * | 2014-03-20 | 2017-11-24 | 中芯国际集成电路制造(上海)有限公司 | A kind of inductor with metal charge structure |
| CN105225812A (en) * | 2014-06-20 | 2016-01-06 | 中芯国际集成电路制造(上海)有限公司 | Pattern earth shield structure and inductor |
| CN105225812B (en) * | 2014-06-20 | 2017-11-21 | 中芯国际集成电路制造(上海)有限公司 | Pattern earth shield structure and inductor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102412230B (en) | 2014-04-16 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140107 |
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Effective date of registration: 20140107 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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