CN102407482A - Method for adjusting metal grinding speed and overcoming defects in grinding process - Google Patents
Method for adjusting metal grinding speed and overcoming defects in grinding process Download PDFInfo
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- CN102407482A CN102407482A CN2011101103660A CN201110110366A CN102407482A CN 102407482 A CN102407482 A CN 102407482A CN 2011101103660 A CN2011101103660 A CN 2011101103660A CN 201110110366 A CN201110110366 A CN 201110110366A CN 102407482 A CN102407482 A CN 102407482A
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- grinding
- lapping
- metal
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- lapping liquid
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- 238000000227 grinding Methods 0.000 title claims abstract description 96
- 239000002184 metal Substances 0.000 title claims abstract description 85
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims abstract description 77
- 230000007547 defect Effects 0.000 title abstract 4
- 239000007788 liquid Substances 0.000 claims abstract description 51
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 8
- 230000003647 oxidation Effects 0.000 claims abstract description 5
- 230000002950 deficient Effects 0.000 claims description 43
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 230000001105 regulatory effect Effects 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 238000003801 milling Methods 0.000 claims description 6
- 229910021645 metal ion Inorganic materials 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 230000003628 erosive effect Effects 0.000 abstract description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- AHKZTVQIVOEVFO-UHFFFAOYSA-N oxide(2-) Chemical class [O-2] AHKZTVQIVOEVFO-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000004210 cathodic protection Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/046—Lapping machines or devices; Accessories designed for working plane surfaces using electric current
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
- H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a method for adjusting the metal grinding speed and overcoming defects in the grinding process. In the method, a conductive system is attached to grinding equipment to electrify a grinding liquid; and in the grinding process, the grinding liquid flows through a grinding pad and a wafer needing to be ground to charge the ground metal surface of the wafer and control the oxidation of the ground metal surface. Due to the adoption of the method, the problem that dish shape and erosion defects are formed easily in the conventional grinding process are solved; and the conductive system is arranged additionally to change the potential of the grinding liquid, so that the grinding rate of ground metal is controlled, and the aim of reducing the dish shape and erosion defects occurring in the grinding process is fulfilled.
Description
Technical field
The present invention relates to a kind of semiconductor alloy grinding technique, relate in particular to a kind of method of regulating metal grinding speed and improving the defective that produces in the process of lapping.
Background technology
During wafer is made; Along with dwindling of upgrading, lead and the grid size of process technique; Photoetching (Lithography) technology to the smooth degree (Non-uniformity) of crystal column surface require increasingly high; IBM Corporation introduces in development CMOS product in 1985, and is successfully applied in the DRAM production of 64MB in nineteen ninety.After nineteen ninety-five, the CMP technology has obtained fast development, is widely used in semiconductor industry.
Grinding with the necessary copper of present advanced technologies is example, and its grinding mechanism mainly is according to the oxidation reaction of copper in lapping liquid:
1. copper is in certain high potential in lapping liquid, is easy to react generation oxide or copper ion with chemical composition wherein;
2. under lower current potential, the oxidation of copper is weakened or is suppressed.Otherwise under high potential, this reaction is accelerated.
Grinder station commonly used at present is to grind under the influence of lapping liquid through the rubbing action between grinding pad and the wafer; Fig. 1 is the structural representation of grinder station in the prior art, sees also Fig. 1: because the grinding rate of different medium is different, regular meeting causes so-called dish (dishing), corrodes (erosion) defective; Be in processing quality and consider, the lapping mode that adopts low-pressure usually in the actual production is to reach result preferably.Yet to also having certain influence on the grinding rate, the grinding rate that low pressure correspondence is lower is unfavorable for improving production capacity and reduces cost.
The Chinese patent of application number: 200780041698.X " method and apparatus that is used for electrochemical mechanical polishing nip substrate " discloses a kind of NiP substrate abrasive method that is used to quicken.But this invention does not relate to the integrated circuit production field, only is used for the NiP substrate and grinds, and the technology of integrated circuit obviously requires more accurate technology controlling and process; The metal grinding of integrated circuit technology and be not suitable for single direction, the size curtage; And this invention does not relate to because the sense of current changes the cathodic protection phenomenon that causes.
Summary of the invention
The invention discloses a kind of method of regulating metal grinding speed and improving the defective that produces in the process of lapping, in order to solve the problem that forms dish in the existing process of lapping easily, corrodes defective.
Above-mentioned purpose of the present invention realizes through following technical scheme:
A kind of method of regulating metal grinding speed and improving the defective that produces in the process of lapping, wherein, an additional conducting system makes lapping liquid charged on milling apparatus; In process of lapping, lapping liquid flow through grinding pad with need polished wafer, make the polished metal surface of wafer have electric charge, to control the oxidation of polished metal surface.
Aforesaid adjusting metal grinding speed is also improved the method for the defective that produces in the process of lapping; Wherein,, said milling apparatus is provided with a conducting element layer in being used to grind the grinding rotating disk of wafer; And the marginal portion of said conducting element layer is exposed to outside the lateral edges that grinds rotating disk, the process that said lapping liquid flows down around said grinding rotating disk, contacts with said conducting element layer.
Aforesaid adjusting metal grinding speed is also improved the method for the defective that produces in the process of lapping, wherein, and with said conducting element layer ground connection.
Aforesaid adjusting metal grinding speed is also improved the method for the defective that produces in the process of lapping, and wherein, said conducting system provides high potential to said lapping liquid; Polished metal is in high potential in lapping liquid; The chemical composition of accelerating in polished metal and the lapping liquid is reacted metallic oxide or metal ion, and the oxide reaction of metal is quickened, and causes the grinding rate to improve; To reduce the pressure that grinds, reduce the scratch degree of metal.
Aforesaid adjusting metal grinding speed is also improved the method for the defective that produces in the process of lapping; Wherein, Said conducting system provides electronegative potential to said lapping liquid, and polished metal is in lapping liquid than electronegative potential, wherein; Ion in the lapping liquid suppresses the chemical composition reaction in polished metal and the lapping liquid, and the grinding rate of metal descends and obtains comparatively smooth surface.
A kind of device of regulating metal grinding speed and improving the defective that produces in the process of lapping comprises, grinder station, and wherein, said grinder station is provided with a conducting system, and the voltage output end of said conducting system contacts the lapping liquid of said grinder.
Aforesaid adjusting metal grinding speed is also improved the device of the defective that produces in the process of lapping; Wherein, Be provided with a conducting element layer in the grinding rotating disk of said grinder; The marginal portion of said conducting element layer is exposed to outside the lateral edges that grinds rotating disk, and said conducting element layer has the exit of a ground connection.
In sum; Owing to adopted technique scheme; The invention solves the problem that forms dish in the existing process of lapping easily, corrodes defective; Through the additional conducting system that is provided with the lapping liquid current potential is changed, and then control the grinding rate of polished metal, reach and reduce the dish that occurs in the process of lapping, the purpose that corrodes defective.
Description of drawings
Fig. 1 is the structural representation of grinder station in the prior art;
Fig. 2 is that the present invention regulates metal grinding speed and improves the structural representation of the device of the defective that produces in the process of lapping;
Fig. 3 is that the present invention regulates metal grinding speed and improves the structural representation of first embodiment of the device of the defective that produces in the process of lapping;
Fig. 4 is that the present invention regulates metal grinding speed and improves the structural representation of second embodiment of the device of the defective that produces in the process of lapping;
Fig. 5 is the structural representation before the present invention regulates metal grinding speed and improves the polished metal grinding of wafer of device of the defective that produces in the process of lapping;
Fig. 6 is the structural representation after grinding technics grinds in the prior art;
Fig. 7 is the structural representation after the present invention regulates metal grinding speed and improves the polished metal grinding of wafer of device of the defective that produces in the process of lapping;
Fig. 8 is the voltage of copper and the curve map of pH value.
The specific embodiment
Be further described below in conjunction with the accompanying drawing specific embodiments of the invention:
Fig. 2 is that the present invention regulates metal grinding speed and improves the structural representation of the device of the defective that produces in the process of lapping; See also Fig. 1, a kind of method of regulating metal grinding speed and improving the defective that produces in the process of lapping, wherein; An additional conducting system 401 on milling apparatus; This additional conductive system 401 provides electric current, the electric field that adds, and this additional conductive system 401 is connected with the lapping liquid 302 of board, makes lapping liquid 302 charged; In process of lapping, lapping liquid 302 flows down from lapping liquid outlet 301, lapping liquid 302 grinding pad 103 of flowing through; Wafer 201 is installed on the wafer support 202, and the surface that wafer 201 need grind is because downforce and grinding pad 103 that wafer support 202 applies are close to, and wafer support 202 drives wafer 201 and rotates; Grinding rotating disk 102 drive grinding pads 103 simultaneously rotates simultaneously; It is in the opposite direction that direction that wafer 201 rotates and grinding pad 103 rotate, thereby reach the purpose that wafer 201 is ground, wherein; Lapping liquid 302 is flowed through between grinding pad 103 and the wafer 201 polished metal surfaces, makes wafer 201 polished metal surfaces have electric charge; Wafer 201 surface grindings are time the different medium; Because the difficult control of metal removal efficiency; Form dish (dishing) easily, corrode (erosion) defective, and after wafer 201 surfaces had electric charge, the current potential on wafer 201 surfaces changed; The chemical reaction of wafer 201 polished metal surfaces is controlled; Make that the metal grinding rate is controlled, the metal on wafer 201 surfaces can play the effect of protection to the metal surface after having electric charge, thereby in the process of grinding, reduces dish (dishing), erosion (erosion) defective.
In the grinding rotating disk 102 of said milling apparatus, be provided with a conducting element layer 501 among the present invention; The marginal portion of conducting element layer 501 is exposed to outside the lateral edges that grinds rotating disk 102; When flowing down around grinding rotating disk 102, lapping liquid 302 contacts, and with said conducting element layer 501 ground connection, in order to the stability of the current potential of maintenance wafer 201 polished metal surfaces with conducting element layer 501; Guarantee the stable purpose of grinding rate, 302 electrolyte of the said lapping liquid among the present invention thereby reach.
Fig. 8 is the voltage of copper and the curve map of pH value; Can know that through Fig. 8 grinding with the necessary copper of present advanced technologies is example; Its grinding mechanism mainly is according to the oxidation reaction of copper in lapping liquid: copper is in certain high potential in lapping liquid, is easy to react generation oxide or copper ion with chemical composition wherein; Under lower current potential, the oxidation of copper is weakened or is suppressed.Otherwise under high potential, this reaction is accelerated.
Said conducting system 401 among the present invention has the function of regulating lapping liquid 302 current potentials, in different process steps, makes the current potential on wafer 201 surfaces different; And then make the current potential on wafer 201 surfaces adapt to different process steps; When being ground to certain stage, make wafer 201 surface metals be in lower current potential,, reach and improve the dish that grinds the back metal, the effect that corrodes defective to reduce the metal grinding rate; And when wafer 201 surfaces are high potential; The metal grinding rate improves, and can reduce the downforce for wafer 201, can reach equally to improve the dish that grinds the back metal, the effect that corrodes defective.
Fig. 3 is that the present invention regulates metal grinding speed and improves the structural representation of first embodiment of the device of the defective that produces in the process of lapping, sees also Fig. 3, in the first embodiment of the present invention; In the process of the grinding of wafer 201 surperficial polished metals; Said conducting system 401 provides high potential to lapping liquid 302, and polished metal is in high potential in lapping liquid 302, accelerates the oxide or the metal ion of the chemical composition reaction generation metal in polished metal and the lapping liquid 302; The oxidation reaction of metal is quickened; Cause the grinding rate to improve,, reduce the scratch degree of metal to reduce the pressure that grinds.
Fig. 4 is that the present invention regulates metal grinding speed and improves the structural representation of second embodiment of the device of the defective that produces in the process of lapping; See also Fig. 4, opposite with first embodiment, in the second embodiment of the present invention; In the process of the grinding of wafer 201 surperficial polished metals; Said conducting system 401 provides electronegative potential to said lapping liquid 302, and polished metal is in than electronegative potential, wherein in lapping liquid 302; Ion in the lapping liquid 302 suppresses the chemical composition reaction in polished metal and the lapping liquid, and the grinding rate of metal descends and obtains comparatively smooth surface.
Fig. 2 is that the present invention regulates metal grinding speed and improves the structural representation of the device of the defective that produces in the process of lapping, sees also Fig. 2, a kind of device of regulating metal grinding speed and improving the defective that produces in the process of lapping; Comprise, 101 of grinders, wherein; Said grinder 101 platforms are provided with a conducting system 401; The voltage output end of said conducting system 401 contacts the lapping liquid outlet 301 of said grinder 101, make the lapping liquid 302 of flowing through have electric charge, thereby lapping liquid 302 is flowed through between grinding pad 103 and the wafer 201 in the process of grinding; Make the metal on wafer 201 surfaces have electric charge, thereby play the effect of control metal grinding rate.
Be provided with a conducting element layer 501 in the grinding rotating disk 102 of the said grinder 101 among the present invention; The marginal portion of said conducting element layer 501 is exposed to outside the lateral edges that grinds rotating disk 102; Said conducting element layer 501 has the exit 502 of a ground connection, in order to the stability of the current potential that keeps wafer 201 surfaces.
Fig. 5 is the structural representation before the present invention regulates metal grinding speed and improves the polished metal grinding of wafer of device of the defective that produces in the process of lapping; Fig. 6 is the structural representation after grinding technics grinds in the prior art; See also Fig. 5, Fig. 6; Can clearly find out through have tangible erosion defective and dish-shaped defective behind the grinding technics of the prior art on the surface of wafer; Fig. 7 is the structural representation after the present invention regulates metal grinding speed and improves the polished metal grinding of wafer of device of the defective that produces in the process of lapping; See also Fig. 7, very smooth through the wafer that grinds out behind the etching technics of the present invention, effectively remove dish and corroded defective.
In sum; Owing to adopted technique scheme; The invention solves the problem that forms dish in the existing process of lapping easily, corrodes defective; Through the additional conducting system that is provided with the lapping liquid current potential is changed, and then control the grinding rate of polished metal, reach and reduce the dish that occurs in the process of lapping, the purpose that corrodes defective.
More than specific embodiment of the present invention is described in detail, but it is just as example, the present invention is not restricted to the specific embodiment of above description.To those skilled in the art, any equivalent modifications that the present invention is carried out with substitute also all among category of the present invention.Therefore, not breaking away from impartial conversion and the modification of being done under the spirit and scope of the present invention, all should contain within the scope of the invention.
Claims (7)
1. the method for the defective of regulating metal grinding speed and improving to produce in the process of lapping is characterized in that, an additional conducting system makes lapping liquid charged on milling apparatus; In process of lapping, lapping liquid flow through grinding pad with need polished wafer, make the polished metal surface of wafer have electric charge, to control the oxidation of polished metal surface.
2. adjusting metal grinding speed according to claim 1 is also improved the method for the defective that produces in the process of lapping; It is characterized in that;, said milling apparatus is provided with a conducting element layer in being used to grind the grinding rotating disk of wafer; And the marginal portion of said conducting element layer is exposed to outside the lateral edges that grinds rotating disk, the process that said lapping liquid flows down around said grinding rotating disk, contacts with said conducting element layer.
3. adjusting metal grinding speed according to claim 1 is also improved the method for the defective that produces in the process of lapping, it is characterized in that, with said conducting element layer ground connection.
4. adjusting metal grinding speed according to claim 1 is also improved the method for the defective that produces in the process of lapping, it is characterized in that said conducting system provides high potential to said lapping liquid; Polished metal is in high potential in lapping liquid; The chemical composition of accelerating in polished metal and the lapping liquid is reacted metallic oxide or metal ion, and the oxide reaction of metal is quickened, and causes the grinding rate to improve; To reduce the pressure that grinds, reduce the scratch degree of metal.
5. adjusting metal grinding speed according to claim 1 is also improved the method for the defective that produces in the process of lapping; It is characterized in that; Said conducting system provides electronegative potential to said lapping liquid, and polished metal is in lapping liquid than electronegative potential, wherein; Ion in the lapping liquid suppresses the chemical composition reaction in polished metal and the lapping liquid, and the grinding rate of metal descends and obtains comparatively smooth surface.
6. the device of the defective of regulating metal grinding speed and improving to produce in the process of lapping comprises, grinder station is characterized in that, said grinder station is provided with a conducting system, and the voltage output end of said conducting system contacts the lapping liquid of said grinder.
7. adjusting metal grinding speed according to claim 6 is also improved the device of the defective that produces in the process of lapping; It is characterized in that; Be provided with a conducting element layer in the grinding rotating disk of said grinder; The marginal portion of said conducting element layer is exposed to outside the lateral edges that grinds rotating disk, and said conducting element layer has the exit of a ground connection.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101103660A CN102407482A (en) | 2011-04-29 | 2011-04-29 | Method for adjusting metal grinding speed and overcoming defects in grinding process |
| US13/339,538 US20120276820A1 (en) | 2011-04-29 | 2011-12-29 | Method for Adjusting Metal Polishing Rate and Reducing Defects Arisen in a Polishing Process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101103660A CN102407482A (en) | 2011-04-29 | 2011-04-29 | Method for adjusting metal grinding speed and overcoming defects in grinding process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102407482A true CN102407482A (en) | 2012-04-11 |
Family
ID=45909990
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101103660A Pending CN102407482A (en) | 2011-04-29 | 2011-04-29 | Method for adjusting metal grinding speed and overcoming defects in grinding process |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20120276820A1 (en) |
| CN (1) | CN102407482A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102975110A (en) * | 2012-12-26 | 2013-03-20 | 上海宏力半导体制造有限公司 | Chemical and mechanical grinding rate control method |
| CN109562505A (en) * | 2018-10-24 | 2019-04-02 | 长江存储科技有限责任公司 | With the chemical-mechanical polisher for scraping fixed device |
| CN109605210A (en) * | 2019-01-23 | 2019-04-12 | 长江存储科技有限责任公司 | A kind of grinding head and chemical-mechanical grinding device |
| CN115609468A (en) * | 2022-11-22 | 2023-01-17 | 苏州江锦自动化科技有限公司 | Wafer grinding equipment |
| CN116852183A (en) * | 2023-08-02 | 2023-10-10 | 山东有研半导体材料有限公司 | Grinding process for improving wafer morphology of large wafer grinder |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102916024B (en) | 2012-10-08 | 2015-12-02 | 上海华力微电子有限公司 | A kind of method forming dual-depth isolated groove |
| CN111975469A (en) * | 2020-08-28 | 2020-11-24 | 上海华力微电子有限公司 | Chemical mechanical polishing method and polishing system |
| CN114734370B (en) * | 2020-12-23 | 2023-06-30 | 中国科学院微电子研究所 | Polishing head and chemical mechanical polishing equipment |
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| EP1103346A2 (en) * | 1999-11-29 | 2001-05-30 | Applied Materials, Inc. | Method and apparatus for electrochemical-mechanical planarization |
| US20030062269A1 (en) * | 2001-09-28 | 2003-04-03 | Sujit Sharan | Electrochemical mechanical planarization |
| US6722942B1 (en) * | 2001-05-21 | 2004-04-20 | Advanced Micro Devices, Inc. | Chemical mechanical polishing with electrochemical control |
| CN1989600A (en) * | 2004-09-14 | 2007-06-27 | 日立化成工业株式会社 | Polishing slurry for cmp |
| CN101573212A (en) * | 2006-11-08 | 2009-11-04 | 圣劳伦斯纳米科技有限公司 | Method and apparatus for electrochemical mechanical polishing NiP substrates |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070243709A1 (en) * | 2006-04-14 | 2007-10-18 | Applied Materials, Inc. | Planarization of substrates at a high polishing rate using electrochemical mechanical polishing |
| DE102009046750B4 (en) * | 2008-12-31 | 2019-02-14 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Electrochemical planarization system with improved electrolyte flow |
-
2011
- 2011-04-29 CN CN2011101103660A patent/CN102407482A/en active Pending
- 2011-12-29 US US13/339,538 patent/US20120276820A1/en not_active Abandoned
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1103346A2 (en) * | 1999-11-29 | 2001-05-30 | Applied Materials, Inc. | Method and apparatus for electrochemical-mechanical planarization |
| US6722942B1 (en) * | 2001-05-21 | 2004-04-20 | Advanced Micro Devices, Inc. | Chemical mechanical polishing with electrochemical control |
| US20030062269A1 (en) * | 2001-09-28 | 2003-04-03 | Sujit Sharan | Electrochemical mechanical planarization |
| CN1989600A (en) * | 2004-09-14 | 2007-06-27 | 日立化成工业株式会社 | Polishing slurry for cmp |
| CN101573212A (en) * | 2006-11-08 | 2009-11-04 | 圣劳伦斯纳米科技有限公司 | Method and apparatus for electrochemical mechanical polishing NiP substrates |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102975110A (en) * | 2012-12-26 | 2013-03-20 | 上海宏力半导体制造有限公司 | Chemical and mechanical grinding rate control method |
| CN109562505A (en) * | 2018-10-24 | 2019-04-02 | 长江存储科技有限责任公司 | With the chemical-mechanical polisher for scraping fixed device |
| US11396080B2 (en) | 2018-10-24 | 2022-07-26 | Yangtze Memory Technologies Co., Ltd. | Chemical mechanical polishing apparatus having scraping fixture |
| CN109605210A (en) * | 2019-01-23 | 2019-04-12 | 长江存储科技有限责任公司 | A kind of grinding head and chemical-mechanical grinding device |
| CN115609468A (en) * | 2022-11-22 | 2023-01-17 | 苏州江锦自动化科技有限公司 | Wafer grinding equipment |
| CN116852183A (en) * | 2023-08-02 | 2023-10-10 | 山东有研半导体材料有限公司 | Grinding process for improving wafer morphology of large wafer grinder |
| CN116852183B (en) * | 2023-08-02 | 2024-04-02 | 山东有研半导体材料有限公司 | Grinding process for improving wafer morphology of large wafer grinder |
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