CN102403359A - Hyperconjugation longitudinal double-diffused metal oxide semiconductor tube - Google Patents
Hyperconjugation longitudinal double-diffused metal oxide semiconductor tube Download PDFInfo
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- CN102403359A CN102403359A CN2011103118213A CN201110311821A CN102403359A CN 102403359 A CN102403359 A CN 102403359A CN 2011103118213 A CN2011103118213 A CN 2011103118213A CN 201110311821 A CN201110311821 A CN 201110311821A CN 102403359 A CN102403359 A CN 102403359A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 97
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 27
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 10
- 229920005591 polysilicon Polymers 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 230000002146 bilateral effect Effects 0.000 claims description 19
- 238000009792 diffusion process Methods 0.000 claims description 19
- 230000003071 parasitic effect Effects 0.000 description 8
- 230000005669 field effect Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- -1 boron ion Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000009931 harmful effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
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Abstract
A hyperconjugation longitudinal double-diffused metal oxide semiconductor tube comprises one or more than one tube units; each tube unit comprises drain electrode metal; an N-type heavily-doped silicon substrate taken as a drain area is arranged on the drain electrode metal; an N-type doped extension layer is arranged on the silicon substrate; a P-type doped columnar semiconductor area is arranged in the extension layer; a P-type heavily-doped semiconductor body area is arranged on the columnar semiconductor area and is positioned in the N-type doped extension layer; an N-type heavily-doped semiconductor source area and a P-type heavily-doped semiconductor contact area are arranged in the body area; a gate oxide layer is arranged in an area on the surface of the N-type doped extension layer outside the source area and the contact area; a polysilicon gate is arranged above the gate oxide layer; oxide layers are arranged above and at the two sides of the polysilicon gate; the source area and the contact area are connected with source electrode metal; and the N-type heavily-doped semiconductor source area is divided by bulges at the left side and the right side of the P-type heavily-doped semiconductor contact area into three block bodies which are not communicated with one another; and the N-type heavily-doped semiconductor source area is shaped like a Chinese character ''Pin''.
Description
Technical field
The present invention relates to the power semiconductor field, say more accurately, relate to a kind of silicon system high pressure ultra-junction longitudinal double-diffused metal oxide semiconductor field-effect transistor.
Background technology
At present; Power device in the application in fields such as daily life, production more and more widely; Power metal oxide semiconductor field-effect transistor particularly; Because they have switching speed, less drive current, the safety operation area of broad faster, therefore received numerous researchers' favor.Quasi-representative at power metal oxide semiconductor field-effect transistor is used---in brushless electric machine, motor driven and the automotive electronics; Drive the load major part and be perception; And device can be operated under the non-clamp inductive switch condition inevitably in some topological structure, thereby brings the possibility of the state that is operated in snowslide.On the other hand, with the increase with switching frequency that reduces of chip area, the power density that is applied on the power device is increasing, thereby also increasing to power device snowslide durability requirement.Therefore, snowslide durability has become the important leverage of power device reliably working in system.At present, the one of the main reasons that the power device snowslide was lost efficacy is the parasitic triode unlatching, and then second breakdown.When the snowslide hole current gets into P type tagma and flow through below, N type source region, be equivalent to form pressure drop on the base resistance of parasitic triode, if this pressure drop greater than the cut-in voltage of PN junction, then parasitic triode conducting, thus cause the device second breakdown easily.
Yet; With reference to Fig. 8; N type source region and P type body contact zone are the stripe shape domain in the tradition ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube; The electric current of the N type of flowing through source region below is more relatively, thereby makes pressure drop between P type tagma and the N type source region reach the cut-in voltage of parasitic triode easily, loses efficacy then.The method of traditional snowslide durability of improving power metal oxide semiconductor field-effect transistor is feasible for electric current when not too big; Yet when current density further improves, still can cause the inner parasitic triode conducting of power metal oxide semiconductor field-effect transistor.The present invention promptly is a kind of a kind of ultra-junction longitudinal double-diffused metal oxide semiconductor field-effect transistor that improves the snowslide durability that proposes to this problem.
Summary of the invention
The present invention is directed to the deficiency of prior art, propose a kind of ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube.This structure can not influence the break-over of device resistive performance and not increase on the basis of technology manufacturing step and degree of difficulty; Reduce the possibility that parasitic triode is opened; Thereby improve the avalanche capability of device, guaranteed that further device is operated in the reliability under the mal-condition.
The present invention adopts following technical scheme:
Ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube; Comprise: drain metal is provided with heavy doping N type silicon substrate, as the drain region of this chip on drain metal; On heavy doping N type silicon substrate, be provided with N type doped epitaxial layer; In N type doped epitaxial layer, be provided with and be interrupted discontinuous P type doping column semiconductor region, on P type doping column semiconductor region, be provided with P type doped semiconductor tagma, and P type doped semiconductor area is positioned at N type doped epitaxial layer; In P type doped semiconductor area, be provided with N type heavily-doped semiconductor source region and P type heavily-doped semiconductor contact zone; Be provided with gate oxide in N type heavily-doped semiconductor source region and P type heavily-doped semiconductor contact zone with exterior domain, above gate oxide, be provided with polysilicon gate, on polysilicon gate, be provided with oxide layer; On N type heavily-doped semiconductor source region and P type heavily-doped semiconductor contact zone, be connected with source metal; It is characterized in that the jut of the left and right sides, P type heavily-doped semiconductor contact zone all is divided into three disconnected blocks with N type heavily-doped semiconductor source region, and N type heavily-doped semiconductor source region presents " article " word shape.
Compared with prior art, the present invention has following advantage:
1) with reference to Fig. 1; Ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube of the present invention has adopted P type heavily-doped semiconductor contact 7; The jut that is the left and right sides, P type heavily-doped semiconductor contact zone (7) all is divided into three disconnected blocks with N type heavily-doped semiconductor source region (6), and N type heavily-doped semiconductor source region (6) presents " article " word shape.With reference to Fig. 6 and Fig. 7; The jut process of the left and right sides, the most of P type heavily-doped semiconductor contact zone (7) of hole current during structure operate as normal of the present invention; With respect to traditional structure the path of more releasing is provided; Thereby the electric current of 6 belows, N type heavily-doped semiconductor source region that reduced to flow through has been avoided the unlatching of parasitic triode.With reference to Figure 10,7.8 * 10
-5Near the drain-source voltage of the traditional structure in place's second sharply descends, and drain-source current rises rapidly, shows that traditional structure is 7.8 * 10
-5Got into avalanche condition after second, yet structure of the present invention is 7.8 * 10
-5Drain-source voltage still maintains high voltage in a very long time after second, and drain-source current still keeps downward trend, shows that structure of the present invention is 7.8 * 10
-5Still can operate as normal in time after second and do not get into avalanche condition, prove absolutely that the avalanche capability of structure of the present invention is significantly improved.
2) with reference to Fig. 1; Through the width W 1 and the W2 of suitably adjustment P type heavily-doped semiconductor contact 7, during forward conduction, the path of electronic current still can diffuse in the whole N type doped epitaxial layer 3 in this structure; With reference to Figure 10, can not produce harmful effect to the conducting resistance of structure.
3) other ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tubes adopt energetic ion to inject and form a very dark P type heavily-doped semiconductor contact; Reduce the hole current of below, N type heavily-doped semiconductor source region of flowing through, and then improved the snowslide durability of device.Yet dark P type heavily-doped semiconductor contact causes the more serious or punch-through breakdown of the charge unbalance degree of ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube easily, thereby has reduced the puncture voltage of device.Structure of the present invention is improved from the domain of P type heavily-doped semiconductor contact, with reference to Figure 12 (the correlation curve sketch map of traditional structure and this structure puncture voltage), the withstand voltage properties of device is not had harmful effect.
Description of drawings
Fig. 1 is the 3 D stereo cross-sectional view of ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube of the present invention.
Fig. 2 is the device profile structure chart of AA' section in the 3 D stereo profile 1 of ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube of the present invention.
Fig. 3 is the device profile structure chart of BB' section in the 3 D stereo profile 2 of ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube of the present invention.
Fig. 4 is the device profile structure chart of CC' section in the profile 2 of ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube of the present invention.
Fig. 5 is the device profile structure chart of DD' section in the profile 2 of ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube of the present invention.
Hole current distribution map when Fig. 6 is profile 4 normal operating conditionss of ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube of the present invention.
Hole current distribution map when Fig. 7 is profile 5 normal operating conditionss of ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube of the present invention.
Fig. 8 is the 3 D stereo profile of traditional ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube.
Fig. 9 is the sketch map of the parasitic triode in the dashed rectangle in the 3 D stereo profile 7 of traditional ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube.
Figure 10 is the snowslide durability line comparison diagram of the present invention and traditional structure.
Figure 11 is the conducting resistance curve comparison diagram of the present invention and traditional structure.
Figure 12 is the reverse breakdown curve comparison diagram of the present invention and traditional structure.
Embodiment
With reference to Fig. 1, ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube comprises: drain metal 1; On drain metal 1, be provided with heavy doping N type silicon substrate 2; As the drain region of this chip, on heavy doping N type silicon substrate 2, be provided with N type doped epitaxial layer 3, in N type doped epitaxial layer 3, be provided with and be interrupted discontinuous P type doping column semiconductor region 4; On P type doping column semiconductor region 4, be provided with P type doped semiconductor tagma 5; And P type doped semiconductor tagma 5 is positioned at N type doped epitaxial layer 3, in P type doped semiconductor tagma 5, is provided with N type heavily-doped semiconductor source region 6 and P type heavily-doped semiconductor contact zone 7, and 6 are provided with gate oxide 8 with P type heavily-doped semiconductor contact zone 7 with exterior domain in N type heavily-doped semiconductor source region; Above gate oxide 8, be provided with polysilicon gate 9; On polysilicon gate 9, be provided with oxide layer 10, on N type heavily-doped semiconductor source region 6 and P type heavily-doped semiconductor contact zone 7, be connected with source metal 11, it is characterized in that; The jut of 7 left and right sides, P type heavily-doped semiconductor contact zone all is divided into three disconnected blocks with N type heavily-doped semiconductor source region 6, and N type heavily-doped semiconductor source region 6 presents " article " word shape.
Also adopt following technical measures to come further to improve performance of the present invention in the present embodiment:
With reference to Fig. 1, the width W 1 of P type heavily-doped semiconductor contact zone 7 right side juts and the width W 2 of left side jut are all adjustable, to obtain different snowslide durability and current handling capability.
The degree of depth of P type heavily-doped semiconductor contact zone 7 that is positioned at P type doped semiconductor tagma 5 is greater than the degree of depth in N type heavily-doped semiconductor source region 6.
With reference to Figure 11, after having used P type heavily-doped semiconductor contact zone 7 structures among the present invention, the ON state current ability of device, just the conducting resistance of device is not compared not reduction with traditional structure.
The present invention can adopt following method to prepare:
1, selects the substrate of a heavy doping N type silicon chip as device, epitaxial growth one deck light dope N type epitaxial loayer on heavy doping N type substrate then.
2, inject the boron ion then on the surface, and annealing pushes away trap, formation P type tagma.
3, on N type epitaxial loayer, adopt the deep trouth corrosion technology to carry out cutting, fill P type silicon then, and carry out chemico-mechanical polishing, form P type post.
4, the growth field oxide etches active area, the regrowth gate oxide.
5, deposit polysilicon and etching form polysilicon gate.
6, phosphonium ion injects and forms N type source region, injects the boron ion then and forms P type body contact zone.
7, carry out surface passivation then, and carve contact hole,, form drain metal and source metal at last at tow sides deposit aluminium all.
Claims (2)
1. ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube; Comprise one or more pipe unit; Described pipe unit comprises: drain metal (1); On drain metal (1), be provided with heavy doping N type silicon substrate (2) as the drain region; On heavy doping N type silicon substrate (2), be provided with N type doped epitaxial layer (3); In N type doped epitaxial layer (3), be provided with row's P type doping column semiconductor region (4), on P type doping column semiconductor region (4), be provided with P type doped semiconductor tagma (5), and P type doped semiconductor tagma (5) be positioned at N type doped epitaxial layer (3); In P type doped semiconductor tagma (5), be provided with N type heavily-doped semiconductor source region (6) and P type heavily-doped semiconductor contact zone (7); Be provided with gate oxide (8) in N type heavily-doped semiconductor source region (6) and P type heavily-doped semiconductor contact zone (7) N type doped epitaxial layer (3) surf zone in addition, be provided with polysilicon gate (9), be provided with oxide layer (10) in the top and the both sides of polysilicon gate (9) in gate oxide (8) top; On N type heavily-doped semiconductor source region (6) and P type heavily-doped semiconductor contact zone (7), be connected with source metal (11)
It is characterized in that the jut of the left and right sides, P type heavily-doped semiconductor contact zone (7) all is divided into three disconnected blocks with N type heavily-doped semiconductor source region (6), and N type heavily-doped semiconductor source region (6) presents " article " word shape.
2. ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube according to claim 1; It is characterized in that the degree of depth of P type heavily-doped semiconductor contact zone (7) that is positioned at P type doped semiconductor tagma (5) is greater than the degree of depth in N type heavily-doped semiconductor source region (6).
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201110311821 CN102403359B (en) | 2011-10-15 | 2011-10-15 | Hyperconjugation longitudinal double-diffused metal oxide semiconductor tube |
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| CN 201110311821 CN102403359B (en) | 2011-10-15 | 2011-10-15 | Hyperconjugation longitudinal double-diffused metal oxide semiconductor tube |
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| CN102403359B CN102403359B (en) | 2013-09-18 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080135926A1 (en) * | 2006-11-20 | 2008-06-12 | Kabushiki Kaisha Toshiba | Semiconductor device |
| US20080179671A1 (en) * | 2007-01-31 | 2008-07-31 | Kabushiki Kaisha Toshiba | Semiconductor apparatus |
| US20080315297A1 (en) * | 2007-06-25 | 2008-12-25 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN101510561A (en) * | 2009-03-30 | 2009-08-19 | 东南大学 | Ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube |
| CN101552291A (en) * | 2009-03-30 | 2009-10-07 | 东南大学 | Semiconductor tube of hyperconjugation longitudinal double diffusion metal oxide with N channels |
| CN202394980U (en) * | 2011-10-15 | 2012-08-22 | 东南大学 | Superjunction vertical double-diffused metal oxide semiconductor tube |
-
2011
- 2011-10-15 CN CN 201110311821 patent/CN102403359B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080135926A1 (en) * | 2006-11-20 | 2008-06-12 | Kabushiki Kaisha Toshiba | Semiconductor device |
| US20080179671A1 (en) * | 2007-01-31 | 2008-07-31 | Kabushiki Kaisha Toshiba | Semiconductor apparatus |
| US20080315297A1 (en) * | 2007-06-25 | 2008-12-25 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN101510561A (en) * | 2009-03-30 | 2009-08-19 | 东南大学 | Ultra-junction longitudinal bilateral diffusion metal oxide semiconductor tube |
| CN101552291A (en) * | 2009-03-30 | 2009-10-07 | 东南大学 | Semiconductor tube of hyperconjugation longitudinal double diffusion metal oxide with N channels |
| CN202394980U (en) * | 2011-10-15 | 2012-08-22 | 东南大学 | Superjunction vertical double-diffused metal oxide semiconductor tube |
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| CN102403359B (en) | 2013-09-18 |
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