CN102399650A - Cleaning composition - Google Patents
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- CN102399650A CN102399650A CN2010102889411A CN201010288941A CN102399650A CN 102399650 A CN102399650 A CN 102399650A CN 2010102889411 A CN2010102889411 A CN 2010102889411A CN 201010288941 A CN201010288941 A CN 201010288941A CN 102399650 A CN102399650 A CN 102399650A
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Abstract
The invention relates to a cleaning composition. The cleaning composition comprises 0.01-0.5% by weight of polyaminocarboxylic salt, 0.01-0.5% by weight of acid, and the balance of water. The cleaning composition can be used for effectively removing residues produced during the chemical and mechanical grinding process.
Description
Technical field
The present invention relates to the constituent that a kind of manufacture of semiconductor is used, relate in particular to a kind of with the cleaning constituent behind the cmp processing procedure.
Background technology
In VLSI (VLSI) processing procedure; Cmp processing procedure (chemicalmechanical polishing; Be called for short: CMP) the comprehensive planarization of crystal column surface (globalplanarization) can be provided; Especially after manufacture of semiconductor got into submicron (sub-micron) field, chemical mechanical milling method is an indispensable process technique especially.
In all items of the performance of weighing the cmp processing procedure, whether the existence of defective is one of big event.The defective that is produced in the cmp processing procedure comprises organic residue, small-particle, scratches and corrosion etc.Wherein, organic residue plays a part because the chemical constitution of grinding slurry.The composition that grinds slurry stays pollutents such as residue or stains with the metal level interaction at grinding pad or tool surfaces sometimes.If these pollutents do not clean up, will make the usefulness of grinding pad reduce, remove rate and reduce rete, and then have influence on the homogeneity that rete removes rate, can shorten the life-span of grinding pad what is more.
For instance, after the step of grinding copper metal or barrier layer, regular meeting stays benzotriazole (BTA, benzotriazole) residue on wafer and grinding pad.This residue is difficult to remove, the life-span that it can influence the electrical property efficiency of element and can shorten grinding pad.
Therefore, for the pollutent that produces behind the cmp processing procedure is carried out in removal, behind cmp, must add a cleaning step.At present, be to use acidity or neutral scavenging solution in the unicircuit manufacturing works, and utilize scrub, modes such as hydro-peening or ultrasound cleaning, to reach the effect of the pollutent of removing crystal column surface.Yet acidity or neutral scavenging solution can excessively remove the plain conductor on the wafer, and cause the roughness of crystal column surface to increase.In addition, above-mentioned scavenging solution can make the usability again of grinding pad reduce.
Because above-mentioned existing cleaning way also can't remove pollutent, and can not improve the character of the crystal column surface behind cmp effectively effectively.Therefore, industry is still actively sought a kind of purging method that can effectively remove crystal column surface residual contaminants behind cmp, and can keep the Flatness of crystal column surface, has more the cleaning behind the cmp of economic benefit simultaneously.
Summary of the invention
The present invention provides a kind of cleaning constituent, can remove effectively to carry out the residue that produced behind the cmp processing procedure.
The present invention proposes a kind of cleaning constituent, comprises polyamines yl carboxylic acid salt (polyaminocarboxylic salt), acid and water.The content of polyamines yl carboxylic acid salt is 0.01 weight % to 0.5 weight %.The content of acid is 0.01 weight % to 0.5 weight %.Wherein, the remainder of cleaning constituent is a water.
Said according to one embodiment of the invention; In above-mentioned cleaning constituent, polyamines yl carboxylic acid salt is for being selected from an alkali metal salt of YD 30 (ethylenediaminetetraacetic acid), diethylene triamine pentacetic acid (DTPA) (diethylenetriaminepentatacetic acid), three glycine nitrilotriacetic acid, N-hydroxyethyl-ethylenediamine nitrilotriacetic (N-(hydroxyethyl)-ethylenediaminetriacetic acid), hydroxyethyl imido oxalic acid (hydroxyethyliminodiacetic acid) and in the ammonium salt (ammonium salt) at least one.
Said according to one embodiment of the invention, in above-mentioned cleaning constituent, acid is at least one in phosphine carboxylic acid (phosphonic carboxylic acid) and the carboxylic acid (carboxylic acid).
Said according to one embodiment of the invention; In above-mentioned cleaning constituent, the phosphine carboxylic acid for be selected from 2-amido ethylphosphonic acid (2-aminoethylphosphonic acid, AEPN), dimethyl methyl phosphonate (Dimethyl methylphosphonate; DMMP), HEDP (1-HydroxyEthylidene-1; 1-Diphosphonic Acid, HEDP), amido three methene phosphonic acids (Aminotris (methylene phosphonic acid), ATMP), ethylene diamine tetra methylene phosphonic acid (Ethylenediamine tetra (methylene phosphonic acid); EDTMP), tetramethylenediamine tetramethyl fork phosphonic acids (Tetramethylenediamine tetra (methylene phosphonicacid); TDTMP), hexanediamine tetramethyl fork phosphonic acids (Hexamethylenediaminetetra (methylene phosphonic acid), HDTMP), NSC 446 five methylenephosphonic acids (Diethylenetriamine penta (methylene phosphonic acid), DTPMP), 2-phosphonic acid butane-1; 2; 4-tricarboxylic acid (2-phosphonobutane-1,2,4-tricarboxlic acid; PBTC), N-(phosphine carboxymerhyl) imido oxalic acid (N-(phosphonomethyl) iminodiacetic acid; PMIDA), 2-propyloic phosphonic acids (2-carboxyethyl phosphonic acid, CEPA) and 2-HPAA (2-Hydroxyphosphonocarboxylic acid, at least one in HPAA).
Said according to one embodiment of the invention; In above-mentioned cleaning constituent, carboxylic acid is for being selected from formic acid (formic acid), acetate (acetic acid), propionic acid (propionic acid), oxalic acid (oxalicacid), vinylformic acid (acrylic acid), phenylformic acid (benzoic acid), maleic acid (maleicacid), oxysuccinic acid (malic acid), pentanedioic acid (glutaric acid), propanedioic acid (malonic acid), hexanodioic acid (adipic acid), Hydrocerol A (citric acid), the achilleic acid (aconitic acid) at least one.
Said according to one embodiment of the invention, in above-mentioned cleaning constituent, clean constituent and also comprise interfacial agent.
Said according to one embodiment of the invention, in above-mentioned cleaning constituent, interfacial agent is non-ionic surfactant (nonionic surfactant), teepol (anionicsurfactant) or its combination.
Said according to one embodiment of the invention; In above-mentioned cleaning constituent, non-ionic surfactant is for being selected from alkyl polyethylene oxide (alkyl poly (ethylene oxide)), alkylphenol polyethylene oxide (alkylphenol poly (ethylene oxide)) and the alkyl poly glucoside (alkylpolyglucosides) at least one.
Said according to one embodiment of the invention, in above-mentioned cleaning constituent, teepol is for being selected from alkyl-sulphate (alkyl sulfate salt) and the sulfonated alkylbenzene (alkylbenzene sulfonate) at least one.
Said according to one embodiment of the invention; In above-mentioned cleaning constituent, alkyl-sulphate is for being selected from Sodium Lauryl sulphate (sodium dodecyl sulfate), ammonium lauryl sulfate (ammoniumlauryl sulfate) and the sodium lauryl tri(oxyethyl) sulfate (sodium laureth sulfate) at least one.
Said according to one embodiment of the invention, in above-mentioned cleaning constituent, sulfonated alkylbenzene comprises Witco 1298 Soft Acid (dodecylbenzene sulfonic acid).
Said according to one embodiment of the invention, in above-mentioned cleaning constituent, clean constituent and comprise the ion toughener, its content is 0.01 weight % to 0.5 weight %.
Said according to one embodiment of the invention; In above-mentioned cleaning constituent, the ion toughener is for being selected from amine salt, sylvite, sodium salt and the lithium salts of formic acid, acetate, propionic acid, oxalic acid, vinylformic acid, phenylformic acid, maleic acid, oxysuccinic acid, pentanedioic acid, propanedioic acid, hexanodioic acid, Hydrocerol A, achilleic acid, Whitfield's ointment (salicylic acid), tartrate (tartaric acid), oxyacetic acid (glycolic acid) and sulfonic acid (sulfonic acid) at least one.
Said according to one embodiment of the invention, in above-mentioned cleaning constituent, but clean the highly enriched cleaning constituent of constituent simmer down to.
Said according to one embodiment of the invention, in above-mentioned cleaning constituent, the cycles of concentration of highly enriched cleaning constituent is 20 times to 60 times.
Said according to one embodiment of the invention, in above-mentioned cleaning constituent, the pH that cleans constituent is 8 to 12.
Based on above-mentioned because cleaning constituent proposed by the invention has polyamines yl carboxylic acid salt, make and clean the constituent alkalize, therefore can carry out the cmp processing procedure after effectively wafer and grinding pad etc. is cleaned, and can not damage it.
In addition, because the employed slurry that grinds is all alkalescence with cleaning constituent proposed by the invention in the cmp processing procedure, can avoids producing soda acid and impact (pH shock).On the other hand, under this alkaline environment, can make abrasive grain have preferable electrokinetic potential (zeta potential), and can promote the cleansing power that cleans constituent.
For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, the special embodiment that lifts of hereinafter, and combine institute's accompanying drawing to elaborate as follows.
Description of drawings
Figure 1A and Figure 1B are the photo figure after with deionized water wafer being cleaned behind the cmp processing procedure of an experimental example of the present invention.
Fig. 2 A and Fig. 2 B are the photo figure after with 7 the POU sample of filling a prescription wafer being cleaned behind the cmp processing procedure of an experimental example of the present invention.
Embodiment
At first, cleaning constituent of the present invention is described, after it is applicable to and carries out the cmp processing procedure, in the manufacturing process for cleaning for wafer and grinding pad etc.
The cleaning constituent of one embodiment of the invention comprises polyamines yl carboxylic acid salt, acid and water.
The content of polyamines yl carboxylic acid salt is 0.01 weight % to 0.5 weight %, can be alkalescence so that clean constituent.The pH that cleans constituent for example is 8 to 12.Polyamines yl carboxylic acid salt for example is to be selected from an alkali metal salt of YD 30, diethylene triamine pentacetic acid (DTPA), three glycines, N-hydroxyethyl-ethylenediamine nitrilotriacetic, hydroxyethyl imido oxalic acid and in the ammonium salt at least one.
The content of acid is 0.01 weight % to 0.5 weight %.Acid for example is at least one in phosphine carboxylic acid and the carboxylic acid (carboxylic acid).
Carboxylic acid for example is to be selected from formic acid, acetate, propionic acid, oxalic acid, vinylformic acid, phenylformic acid, maleic acid, oxysuccinic acid, pentanedioic acid, propanedioic acid, hexanodioic acid, Hydrocerol A, the achilleic acid at least one.
The phosphine carboxylic acid for example is to be selected from 2-amido ethylphosphonic acid, dimethyl methyl phosphonate, HEDP, amido three methene phosphonic acids, ethylene diamine tetra methylene phosphonic acid, tetramethylenediamine tetramethyl fork phosphonic acids, hexanediamine tetramethyl fork phosphonic acids, NSC 446 five methylenephosphonic acids, 2-phosphonic acid butane-1; 2, at least one in 4-tricarboxylic acid, N-(phosphine carboxymerhyl) imido oxalic acid, 2-propyloic phosphonic acids and the 2-HPAA.
In addition, clean constituent and also can comprise interfacial agent, to increase the wetting ability of cleaning constituent.Interfacial agent for example is non-ion interface promoting agent, teepol or its combination.Wherein, non-ionic surfactant for example is to be selected from alkyl polyethylene oxide, alkylphenol polyethylene oxide and the alkyl poly glucoside at least one.Teepol for example is to be selected from alkyl-sulphate and the sulfonated alkylbenzene at least one.Alkyl-sulphate for example is to be selected from Sodium Lauryl sulphate, ammonium lauryl sulfate and the sodium lauryl tri(oxyethyl) sulfate at least one.Sulfonated alkylbenzene for example is a Witco 1298 Soft Acid.
In addition, clean constituent and also can comprise the ion toughener, its content is 0.01 weight % to 0.5 weight %, can improve the etch capabilities of cleaning constituent.The ion toughener for example is at least one in amine salt, sylvite, sodium salt and the lithium salts that is selected from formic acid, acetate, propionic acid, oxalic acid, vinylformic acid, phenylformic acid, maleic acid, oxysuccinic acid, pentanedioic acid, propanedioic acid, hexanodioic acid, Hydrocerol A, achilleic acid, Whitfield's ointment, tartrate, oxyacetic acid and sulfonic acid.
In addition, the remainder of cleaning constituent is a water.Water for example is deionized water.
It should be noted that based on commercial factors and consider, can reduce the weight and the volume that clean constituent, clean the shipment and delivery cost of constituent and the required space of storing goods with reduction significantly with cleaning the highly enriched cleaning constituent of constituent simmer down to.The cycles of concentration of highly enriched cleaning constituent for example is 20 times to 60 times.
Based on above-mentioned; Because the cleaning constituent that present embodiment proposed has polyamines yl carboxylic acid salt, make and clean the constituent alkalize, so after carrying out the cmp processing procedure; Can clean wafer and grinding pad etc. effectively, and can not damage wafer and grinding pad.
In addition, because the employed slurry that grinds is all alkalescence with the cleaning constituent that present embodiment is proposed in the cmp processing procedure, therefore do not exist soda acid to impact (pH shock).On the other hand; Under this alkaline environment; Can make abrasive grain have preferable electrokinetic potential (zeta potential) and can prevent that abrasive grain from assembling, and can promote, also to having preferable solubleness like organic residues such as benzotriazoles for short grained cleansing power.
Below, carry out actual experiment test.Wherein, prescription 1 to prescription 10 is the product after concentrating, and the scavenging solution sample in order to cleaning in each experimental example is diluted sample, be referred to as " sample during use (point-of-use (POU) sample, hereinafter to be referred as: the POU sample) ".
[experimental example one]
Prescription 1 is as shown in table 1 below to moity, ratio and the pH of the cleaning constituent of prescription 6.Wherein, prescription 1 to the remainder of the cleaning constituent of prescription 6 is a water.In experimental example one, the POU sample of prescription 1 to prescription 6 is the sample after diluting 40 times with deionized water.
Table 1
Annotate:
KDTPA: diethylene triamine pentacetic acid (DTPA) five sylvite (potassiumdiethylenetriaminepentaacetate)
PBTC:2-phosphonic acid butane-1,2,4-tricarboxylic acid (2-phosphonobutane-1,2,4-tricarboxlic acid)
(1) static rate of etch test
1. employed wafer, measuring instrument and experimental technique are following:
Wafer: 200 millimeters copper covers wafer, and wherein copper thickness is 2000 dusts
Measuring instrument: X-light fluorescence analyser (X-ray Fluorescence Spectrometer, hereinafter to be referred as: XRF)
Experimental technique: at first, the 1 cleaning constituent to prescription 6 of filling a prescription is diluted with 40 times deionized waters.Then, copper being covered wafer was soaked in prescription 1 to the diluting soln of prescription 6 cleaning constituent 240 minutes.Then, utilize XRF to measure the thickness of copper before and after etching, with calculate average static rate of etch (static etching rate, hereinafter to be referred as: SER).
2. the result of static rate of etch test: as shown in table 2 below.
Table 2
| Sample | SER (dust/minute) |
| The POU sample of prescription 1 | 4.6 |
| The POU sample of prescription 2 | 3.5 |
| The POU sample of prescription 3 | 3.45 |
| The POU sample of prescription 4 | 3.5 |
| The POU sample of prescription 5 | 2.5 |
| The POU sample of prescription 6 | 3.45 |
Please with reference to table 2, prescription 1 is all very low for the SER of the copper metal on the wafer to the POU sample of prescription 6, all less than 5 dusts/minute.Hence one can see that, and prescription 1 to the POU sample of prescription 6 can't cause the erosion of over etching to the copper metal, and do not have undercut phenomenon (under cut) generation.Therefore, prescription 1 to the POU sample of prescription 6 is applicable in the existing manufacture of semiconductor.
(2) moistening test (wetting test)
1. employed wafer, measuring instrument and experimental technique are following:
Wafer: 200 millimeters copper covers wafer and MIT 854 patterned wafers
Grind slurry: SuperNova SN2000 copper grinds slurry and SuperNova 4500 barrier layers grind slurry
Measuring instrument: contact angle measures appearance (contact angle meter)
Experimental technique: at first, the 1 cleaning constituent to prescription 6 of filling a prescription is diluted with 40 times deionized waters.Then, utilize contact angle to measure the contact angle of POU sample on copper covering wafer that appearance measures prescription 1 to prescription 6.
In addition, about MIT 854 patterned wafers, utilize Applied Marterials Mirra grinder station to grind slurry earlier and SuperNova 4500 barrier layers grind slurry MIT 854 patterned wafers are ground with SuperNova SN2000 copper.Then, utilize prescription 1 to the POU sample of prescription 6 MIT 854 patterned wafers to be cleaned with the flow rate of 15 ml/min.After MIT 854 patterned wafers are cleaned, utilize contact angle to measure appearance and measure the contact angle of deionized water on MIT 854 patterned wafers.
2. the result of moistening test: as shown in table 3 below.
Table 3
Please with reference to table 3, prescription 1 is all very little to the contact angle of POU sample on wafer of prescription 6, so for wafer preferable wetting capacity is arranged.In addition, the contact angle on the wafer of deionized water after the POU sample through prescription 1 to prescription 6 cleans is also all very little, and the wafer after the ionized water of dieing cleans for the POU sample through prescription 1 to prescription 6 has preferable wetting capacity.
From the above, when the POU sample that uses prescription 1 to prescription 6 cleaned wafer, prescription 1 to the POU sample and the deionized water of prescription 6 all had preferable wetting capacity for wafer, therefore can clean wafer effectively.
(3) test of the roughness after the cleaning
1. employed wafer, measuring instrument and experimental technique are following:
Wafer: MIT 854 patterned wafers
Grind slurry: SuperNova SN2000 copper grinds slurry and SuperNova 4500 barrier layers grind slurry
Measuring instrument: (Atomic Force Microscope is called for short: AFM) AFM
Experimental technique: at first utilize Applied Marterials Mirra grinder station, grind slurry and SuperNova 4500 barrier layers grind slurry MIT 854 patterned wafers are ground with SuperNova SN2000 copper.Then, utilize prescription 1 to the POU sample of prescription 6 MIT 854 patterned wafers to be cleaned with the flow rate of 15 ml/min.After MIT 854 patterned wafers are cleaned, utilize AFM to measure the roughness of crystal column surface before and after etching.
2. the result of roughness test: as shown in table 4 below.
Table 4
Please with reference to table 4, prescription 1 is all very low for the roughness of the copper metal on the wafer to the POU sample of prescription 6, and Ra is all less than desired 7 dusts of specification.Hence one can see that, utilizes the 1 POU sample to prescription 6 of filling a prescription that wafer is cleaned and can have preferable surfaceness.
[experimental example two]
Prescription 7 is as shown in table 5 below to moity, ratio and the pH of the cleaning constituent of prescription 10.Wherein, prescription 7 to the remainder of the cleaning constituent of prescription 10 is a water.Prescription 7 is to filling a prescription 10 for the product after concentrating, and in experimental example two, the POU samples of prescription 7 to prescription 10 are the sample after diluting 40 times with deionized water.
Table 5
Below, utilize the POU sample of prescription 7 to prescription 10 to carry out SER test, roughness test, moistening test, the test of BTA solubleness and electrokinetic potential test, the result of its test is as shown in table 6 below.
Table 6
1.SER the result of test:
Please with reference to table 6, prescription 7 is all very low for the SER of the copper metal on the wafer to the POU sample of prescription 10, all less than 3 dusts/minute.Hence one can see that, and prescription 7 to the POU sample of prescription 10 can't cause over etching to the copper metal.
2. the result of roughness test:
Please with reference to table 6, prescription 7 is all very low for the roughness of the copper metal on the wafer to the POU sample of prescription 10, all less than desired 7 dusts of specification.
3. the result of moistening test:
Please with reference to table 6, can know that by the experimental result of prescription 7 and 8 the POU sample of filling a prescription owing in prescription 8, add teepol, therefore filling a prescription 8 has preferable wet characteristic compared to prescription 7.
4.BTA solubleness test:
Please with reference to table 6, prescription 7 to the POU sample of prescription 10 has preferable BTA solubleness compared to de-ionized.In addition, add the prescription 9 of ammonium oxalate and the prescription 10 of interpolation ammonium citrate and have preferable BTA solubleness.Hence one can see that, in cleaning constituent, adds the ion toughener like ammonium oxalate and ammonium citrate etc., help to dissolve organic residues such as BTA, and SER, roughness and wet characteristic still can maintain good level.
5. electrokinetic potential test:
Please with reference to table 6, with 7 SiO that clean to the POU sample of prescription 10 that fill a prescription
2Abrasive grain has quite high negative electrokinetic potential, can make abrasive grain and wafer between have sizable repulsive force, so can prevent that abrasive grain from adhering on the wafer, and then have preferable cleansing power.
[experimental example three]
Experimental technique: two MIT 854 patterned wafers are provided, utilize the Mirra grinder station to grind slurry earlier and SuperNova 4500 barrier layers grind slurry MIT 854 patterned wafers are ground with SuperNova SN2000 copper.Then, utilize deionized water and 7 the POU sample of filling a prescription that wafer is cleaned respectively.In experimental example three, the POU sample of prescription 7 is the sample after diluting 40 times with deionized water.
Figure 1A and Figure 1B are the photo figure after with deionized water wafer being cleaned behind the cmp processing procedure of an experimental example of the present invention.
Fig. 2 A and Fig. 2 B are the photo figure after with 7 the POU sample of filling a prescription wafer being cleaned behind the cmp processing procedure of an experimental example of the present invention.
Please be simultaneously with reference to Figure 1A and Figure 1B, on the wafer that utilizes deionized water to clean, in the copper metal line zone of Figure 1A and the intersection of the copper metal line of Figure 1B and silicon oxide dielectric layer and organic residue all appears.Hence one can see that, and single the cleaning also with deionized water can't remove the organic residue on the wafer effectively.
Please be simultaneously with reference to Fig. 2 A and Fig. 2 B, on the wafer that the POU sample that utilizes prescription 7 cleans, in the copper metal line zone of Fig. 2 A and the intersection of the copper metal line of Fig. 2 B and silicon oxide dielectric layer all do not find organic residue.Hence one can see that, and the POU sample of utilization prescription 7 cleans and can remove the organic residue on the wafer effectively.
[experimental example four]
The residual test of metals ion:
1. experimental technique: three MIT 854 patterned wafers are provided, utilize Mirra (ProductName) grinder station to grind slurry and SuperNova 4500 barrier layers earlier and grind slurry MIT 854 patterned wafers are ground with SuperNova SN2000 copper.Then, wherein a wafer does not use scavenging solution to clean, and other two wafer utilize prescription 5 and 7 the POU sample of filling a prescription that wafer is cleaned respectively.Afterwards, utilize full-reflection X light fluorescent spectrometry (total reflection X-ray fluorescence (TXRF) spectroscopy) to carry out the measurement of metal residue.In experimental example four, prescription 5 and 7 the POU sample of filling a prescription are for the sample after 40 times of the deionized water dilutions.
2. the result of the residual test of metals ion: as shown in table 7 below.
Table 7
Please, on the wafer that does not use scavenging solution to clean, can stay a large amount of metals ion residues with reference to table 7.Yet, utilize prescription 5 and wafer that 7 the POU sample of filling a prescription cleans on, only stay the metals ion residue of trace.Hence one can see that, utilizes prescription 5 and 7 the POU sample of filling a prescription cleans the metals ion residue that can remove effectively on the wafer to wafer.
Though the present invention discloses as above with embodiment; But it is not that any those skilled in the art are not breaking away from the spirit and scope of the present invention in order to qualification the present invention; Can do suitably change and be equal to replacement, so protection scope of the present invention should be as the criterion with the scope that claims were defined.
Claims (16)
1. one kind is cleaned constituent, it is characterized in that, comprising:
Polyamines yl carboxylic acid salt, content are 0.01 weight % to 0.5 weight %;
Acid, content are 0.01 weight % to 0.5 weight %; And
Water is the remainder of said cleaning constituent.
2. cleaning constituent according to claim 1; It is characterized in that said polyamines yl carboxylic acid salt is to be selected from an alkali metal salt of YD 30, diethylene triamine pentacetic acid (DTPA), three glycines, N-hydroxyethyl-ethylenediamine nitrilotriacetic, hydroxyethyl imido oxalic acid and in the ammonium salt at least one.
3. cleaning constituent according to claim 1 is characterized in that, said acid is at least one in phosphine carboxylic acid and the carboxylic acid.
4. cleaning constituent according to claim 3; It is characterized in that; Said phosphine carboxylic acid is for being selected from 2-amido ethylphosphonic acid, dimethyl methyl phosphonate, HEDP, amido three methene phosphonic acids, ethylene diamine tetra methylene phosphonic acid, tetramethylenediamine tetramethyl fork phosphonic acids, hexanediamine tetramethyl fork phosphonic acids, NSC 446 five methylenephosphonic acids, 2-phosphonic acid butane-1; 2, at least one in 4-tricarboxylic acid, N-(phosphine carboxymerhyl) imido oxalic acid, 2-propyloic phosphonic acids and the 2-HPAA.
5. cleaning constituent according to claim 3; It is characterized in that said carboxylic acid is to be selected from formic acid, acetate, propionic acid, oxalic acid, vinylformic acid, phenylformic acid, maleic acid, oxysuccinic acid, pentanedioic acid, propanedioic acid, hexanodioic acid, Hydrocerol A, the achilleic acid at least one.
6. cleaning constituent according to claim 1 is characterized in that, also comprises interfacial agent.
7. cleaning constituent according to claim 6 is characterized in that, said interfacial agent is non-ionic surfactant, teepol or its combination.
8. cleaning constituent according to claim 7 is characterized in that, said non-ionic surfactant is to be selected from alkyl polyethylene oxide, alkylphenol polyethylene oxide and the alkyl poly glucoside at least one.
9. cleaning constituent according to claim 7 is characterized in that, said teepol is to be selected from alkyl-sulphate and the sulfonated alkylbenzene at least one.
10. cleaning constituent according to claim 9 is characterized in that, said alkyl-sulphate is to be selected from Sodium Lauryl sulphate, ammonium lauryl sulfate and the sodium lauryl tri(oxyethyl) sulfate at least one.
11. cleaning constituent according to claim 9 is characterized in that said sulfonated alkylbenzene comprises Witco 1298 Soft Acid.
12. cleaning constituent according to claim 1 is characterized in that, also comprises the ion toughener, its content is 0.01 weight % to 0.5 weight %.
13. cleaning constituent according to claim 12; It is characterized in that said ion toughener is at least one in amine salt, sylvite, sodium salt and the lithium salts that is selected from formic acid, acetate, propionic acid, oxalic acid, vinylformic acid, phenylformic acid, maleic acid, oxysuccinic acid, pentanedioic acid, propanedioic acid, hexanodioic acid, Hydrocerol A, achilleic acid, Whitfield's ointment, tartrate, oxyacetic acid and sulfonic acid.
14., it is characterized in that, but the highly enriched cleaning constituent of said cleaning constituent simmer down to according to the described cleaning constituent of any one claim in the claim 1 to 13.
15. cleaning constituent according to claim 14 is characterized in that, the cycles of concentration of said highly enriched cleaning constituent is 20 times to 60 times.
16. cleaning constituent according to claim 1 is characterized in that, the pH of said cleaning constituent is 8 to 12.
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| CN102796627A (en) * | 2012-07-31 | 2012-11-28 | 广州星业科技股份有限公司 | Washing composition |
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| CN106340470A (en) * | 2015-07-17 | 2017-01-18 | 盛美半导体设备（上海）有限公司 | Wafer surface cleaning device and cleaning method |
| CN110724607A (en) * | 2019-11-15 | 2020-01-24 | 四川百科乐化学科技有限公司 | Shower room cleaning cream and preparation method thereof |
| CN112064050A (en) * | 2020-09-18 | 2020-12-11 | 广州三孚新材料科技股份有限公司 | Acidic degreasing agent for copper electroplating and preparation method thereof |
| CN112143574A (en) * | 2020-09-30 | 2020-12-29 | 常州时创新材料有限公司 | Cleaning solution used after CMP in IC copper process and preparation method thereof |
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| CN102796627A (en) * | 2012-07-31 | 2012-11-28 | 广州星业科技股份有限公司 | Washing composition |
| CN102796627B (en) * | 2012-07-31 | 2013-08-07 | 广州星业科技股份有限公司 | Washing composition |
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| CN103074179A (en) * | 2012-12-14 | 2013-05-01 | 内蒙古河西航天科技发展有限公司 | Alkaline cleaner for food contact surface of liquid milk equipment |
| CN106340470A (en) * | 2015-07-17 | 2017-01-18 | 盛美半导体设备（上海）有限公司 | Wafer surface cleaning device and cleaning method |
| CN110724607A (en) * | 2019-11-15 | 2020-01-24 | 四川百科乐化学科技有限公司 | Shower room cleaning cream and preparation method thereof |
| CN112064050A (en) * | 2020-09-18 | 2020-12-11 | 广州三孚新材料科技股份有限公司 | Acidic degreasing agent for copper electroplating and preparation method thereof |
| CN112064050B (en) * | 2020-09-18 | 2021-09-24 | 广州三孚新材料科技股份有限公司 | Acidic degreasing agent for copper electroplating and preparation method thereof |
| CN112143574A (en) * | 2020-09-30 | 2020-12-29 | 常州时创新材料有限公司 | Cleaning solution used after CMP in IC copper process and preparation method thereof |
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