CN115992031A - Post-chemical mechanical polishing cleaning liquid composition - Google Patents
Post-chemical mechanical polishing cleaning liquid composition Download PDFInfo
- Publication number
- CN115992031A CN115992031A CN202211286061.XA CN202211286061A CN115992031A CN 115992031 A CN115992031 A CN 115992031A CN 202211286061 A CN202211286061 A CN 202211286061A CN 115992031 A CN115992031 A CN 115992031A
- Authority
- CN
- China
- Prior art keywords
- acid
- post
- ammonium
- cleaning fluid
- fluid composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 123
- 239000000203 mixture Substances 0.000 title claims abstract description 104
- 238000005498 polishing Methods 0.000 title claims abstract description 74
- 239000000126 substance Substances 0.000 title claims abstract description 71
- 239000007788 liquid Substances 0.000 title claims description 72
- 239000002738 chelating agent Substances 0.000 claims abstract description 33
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 32
- 150000002222 fluorine compounds Chemical class 0.000 claims abstract description 27
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000003945 anionic surfactant Substances 0.000 claims abstract description 22
- 150000003863 ammonium salts Chemical class 0.000 claims abstract description 20
- 239000012530 fluid Substances 0.000 claims abstract description 19
- 150000007524 organic acids Chemical class 0.000 claims abstract description 18
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 17
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 8
- -1 dodecylamino Chemical group 0.000 claims description 24
- 239000002253 acid Substances 0.000 claims description 21
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 15
- 229920002125 Sokalan® Polymers 0.000 claims description 14
- 239000004584 polyacrylic acid Substances 0.000 claims description 13
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 12
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 claims description 11
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 claims description 11
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 claims description 10
- 239000004254 Ammonium phosphate Substances 0.000 claims description 9
- 229910000148 ammonium phosphate Inorganic materials 0.000 claims description 9
- 235000019289 ammonium phosphates Nutrition 0.000 claims description 9
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 claims description 8
- 239000001099 ammonium carbonate Substances 0.000 claims description 8
- 229920001577 copolymer Polymers 0.000 claims description 8
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 7
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 claims description 7
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 6
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 claims description 6
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 claims description 5
- 239000005695 Ammonium acetate Substances 0.000 claims description 5
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 5
- 235000019257 ammonium acetate Nutrition 0.000 claims description 5
- 229940043376 ammonium acetate Drugs 0.000 claims description 5
- 235000012501 ammonium carbonate Nutrition 0.000 claims description 5
- 239000011976 maleic acid Substances 0.000 claims description 5
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 5
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 claims description 4
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Natural products C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- VBIXEXWLHSRNKB-UHFFFAOYSA-N ammonium oxalate Chemical compound [NH4+].[NH4+].[O-]C(=O)C([O-])=O VBIXEXWLHSRNKB-UHFFFAOYSA-N 0.000 claims description 4
- 239000000174 gluconic acid Substances 0.000 claims description 4
- 235000012208 gluconic acid Nutrition 0.000 claims description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 4
- 235000006408 oxalic acid Nutrition 0.000 claims description 4
- 239000003002 pH adjusting agent Substances 0.000 claims description 4
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 3
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910000013 Ammonium bicarbonate Inorganic materials 0.000 claims description 3
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 3
- 235000012538 ammonium bicarbonate Nutrition 0.000 claims description 3
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052921 ammonium sulfate Inorganic materials 0.000 claims description 3
- 235000011130 ammonium sulphate Nutrition 0.000 claims description 3
- 235000015165 citric acid Nutrition 0.000 claims description 3
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 3
- 239000001630 malic acid Substances 0.000 claims description 3
- 235000011090 malic acid Nutrition 0.000 claims description 3
- MOVBJUGHBJJKOW-UHFFFAOYSA-N methyl 2-amino-5-methoxybenzoate Chemical compound COC(=O)C1=CC(OC)=CC=C1N MOVBJUGHBJJKOW-UHFFFAOYSA-N 0.000 claims description 3
- 125000000075 primary alcohol group Chemical group 0.000 claims description 3
- 150000003141 primary amines Chemical group 0.000 claims description 3
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 claims description 3
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 claims description 3
- 229960000281 trometamol Drugs 0.000 claims description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 2
- KWIPUXXIFQQMKN-UHFFFAOYSA-N 2-azaniumyl-3-(4-cyanophenyl)propanoate Chemical compound OC(=O)C(N)CC1=CC=C(C#N)C=C1 KWIPUXXIFQQMKN-UHFFFAOYSA-N 0.000 claims description 2
- KRGXWTOLFOPIKV-UHFFFAOYSA-N 3-(methylamino)propan-1-ol Chemical compound CNCCCO KRGXWTOLFOPIKV-UHFFFAOYSA-N 0.000 claims description 2
- 229920002126 Acrylic acid copolymer Polymers 0.000 claims description 2
- CITCOZGDILKPHL-UHFFFAOYSA-N CP(O)(O)=O.CP(O)(O)=O.CP(O)(O)=O.CP(O)(O)=O.CP(O)(O)=O.NCCNCCN Chemical compound CP(O)(O)=O.CP(O)(O)=O.CP(O)(O)=O.CP(O)(O)=O.CP(O)(O)=O.NCCNCCN CITCOZGDILKPHL-UHFFFAOYSA-N 0.000 claims description 2
- YSMRWXYRXBRSND-UHFFFAOYSA-N TOTP Chemical compound CC1=CC=CC=C1OP(=O)(OC=1C(=CC=CC=1)C)OC1=CC=CC=C1C YSMRWXYRXBRSND-UHFFFAOYSA-N 0.000 claims description 2
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 claims description 2
- 229940090948 ammonium benzoate Drugs 0.000 claims description 2
- 125000000031 ethylamino group Chemical group [H]C([H])([H])C([H])([H])N([H])[*] 0.000 claims description 2
- 239000004310 lactic acid Substances 0.000 claims description 2
- 235000014655 lactic acid Nutrition 0.000 claims description 2
- 229920002401 polyacrylamide Polymers 0.000 claims description 2
- 150000003460 sulfonic acids Chemical class 0.000 claims description 2
- UXYAJXBVMZFRMS-UHFFFAOYSA-N 2-hydroxy-1,3,2$l^{5}-dioxaphosphepane 2-oxide Chemical compound OP1(=O)OCCCCO1 UXYAJXBVMZFRMS-UHFFFAOYSA-N 0.000 claims 2
- MSAHCLIFKYIZKK-UHFFFAOYSA-N 2-[2-[bis(2-phosphonoethyl)amino]ethyl-(2-phosphonoethyl)amino]ethylphosphonic acid Chemical compound OP(O)(=O)CCN(CCP(O)(O)=O)CCN(CCP(O)(O)=O)CCP(O)(O)=O MSAHCLIFKYIZKK-UHFFFAOYSA-N 0.000 claims 1
- UYXQLQUXXCIFQM-UHFFFAOYSA-N 2-hydroxy-1,3,2$l^{5}-dioxaphospholane 2-oxide Chemical compound OP1(=O)OCCO1 UYXQLQUXXCIFQM-UHFFFAOYSA-N 0.000 claims 1
- XYJLPCAKKYOLGU-UHFFFAOYSA-N 2-phosphonoethylphosphonic acid Chemical group OP(O)(=O)CCP(O)(O)=O XYJLPCAKKYOLGU-UHFFFAOYSA-N 0.000 claims 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-L Phosphate ion(2-) Chemical compound OP([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-L 0.000 claims 1
- 239000000356 contaminant Substances 0.000 abstract description 15
- 235000012431 wafers Nutrition 0.000 description 34
- 239000002245 particle Substances 0.000 description 32
- 238000000034 method Methods 0.000 description 30
- 239000004065 semiconductor Substances 0.000 description 29
- 229910000420 cerium oxide Inorganic materials 0.000 description 27
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 25
- 230000008569 process Effects 0.000 description 25
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 22
- 230000007547 defect Effects 0.000 description 20
- 238000007517 polishing process Methods 0.000 description 19
- 229910052814 silicon oxide Inorganic materials 0.000 description 19
- 238000005530 etching Methods 0.000 description 17
- 239000002002 slurry Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 229910021645 metal ion Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000001179 sorption measurement Methods 0.000 description 7
- 239000012153 distilled water Substances 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 238000006722 reduction reaction Methods 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- PXRKCOCTEMYUEG-UHFFFAOYSA-N 5-aminoisoindole-1,3-dione Chemical compound NC1=CC=C2C(=O)NC(=O)C2=C1 PXRKCOCTEMYUEG-UHFFFAOYSA-N 0.000 description 3
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 3
- 238000006757 chemical reactions by type Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 3
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 3
- 239000011970 polystyrene sulfonate Substances 0.000 description 3
- 229960002796 polystyrene sulfonate Drugs 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- FZIPCQLKPTZZIM-UHFFFAOYSA-N 2-oxidanylpropane-1,2,3-tricarboxylic acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O.OC(=O)CC(O)(C(O)=O)CC(O)=O FZIPCQLKPTZZIM-UHFFFAOYSA-N 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- ZRIUUUJAJJNDSS-UHFFFAOYSA-N ammonium phosphates Chemical compound [NH4+].[NH4+].[NH4+].[O-]P([O-])([O-])=O ZRIUUUJAJJNDSS-UHFFFAOYSA-N 0.000 description 2
- YTFJQDNGSQJFNA-UHFFFAOYSA-N benzyl dihydrogen phosphate Chemical compound OP(O)(=O)OCC1=CC=CC=C1 YTFJQDNGSQJFNA-UHFFFAOYSA-N 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- BNMJSBUIDQYHIN-UHFFFAOYSA-N butyl dihydrogen phosphate Chemical compound CCCCOP(O)(O)=O BNMJSBUIDQYHIN-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 229910000388 diammonium phosphate Inorganic materials 0.000 description 2
- 235000019838 diammonium phosphate Nutrition 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- ZUVCYFMOHFTGDM-UHFFFAOYSA-N hexadecyl dihydrogen phosphate Chemical compound CCCCCCCCCCCCCCCCOP(O)(O)=O ZUVCYFMOHFTGDM-UHFFFAOYSA-N 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- WYAKJXQRALMWPB-UHFFFAOYSA-N nonyl dihydrogen phosphate Chemical compound CCCCCCCCCOP(O)(O)=O WYAKJXQRALMWPB-UHFFFAOYSA-N 0.000 description 2
- NIFHFRBCEUSGEE-UHFFFAOYSA-N oxalic acid Chemical compound OC(=O)C(O)=O.OC(=O)C(O)=O NIFHFRBCEUSGEE-UHFFFAOYSA-N 0.000 description 2
- NVTPMUHPCAUGCB-UHFFFAOYSA-N pentyl dihydrogen phosphate Chemical compound CCCCCOP(O)(O)=O NVTPMUHPCAUGCB-UHFFFAOYSA-N 0.000 description 2
- CMPQUABWPXYYSH-UHFFFAOYSA-N phenyl phosphate Chemical compound OP(O)(=O)OC1=CC=CC=C1 CMPQUABWPXYYSH-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- STGNLGBPLOVYMA-TZKOHIRVSA-N (z)-but-2-enedioic acid Chemical compound OC(=O)\C=C/C(O)=O.OC(=O)\C=C/C(O)=O STGNLGBPLOVYMA-TZKOHIRVSA-N 0.000 description 1
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- KVZLHPXEUGJPAH-UHFFFAOYSA-N 2-oxidanylpropanoic acid Chemical compound CC(O)C(O)=O.CC(O)C(O)=O KVZLHPXEUGJPAH-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical group OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- YUTLCNZPZMMYMF-UHFFFAOYSA-N [2-[2-[bis(phosphonomethyl)amino]ethyl-(phosphonomethyl)amino]ethylamino]methylphosphonic acid Chemical compound OP(O)(=O)CNCCN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O YUTLCNZPZMMYMF-UHFFFAOYSA-N 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 150000008055 alkyl aryl sulfonates Chemical class 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 150000008052 alkyl sulfonates Chemical class 0.000 description 1
- 125000005228 aryl sulfonate group Chemical group 0.000 description 1
- YOUBLKPZGAHMAH-UHFFFAOYSA-N azane;butan-2-ol Chemical compound N.CCC(C)O YOUBLKPZGAHMAH-UHFFFAOYSA-N 0.000 description 1
- ZSIQJIWKELUFRJ-UHFFFAOYSA-N azepane Chemical compound C1CCCNCC1 ZSIQJIWKELUFRJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000009920 chelation Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- YRIUSKIDOIARQF-UHFFFAOYSA-N dodecyl benzenesulfonate Chemical compound CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 YRIUSKIDOIARQF-UHFFFAOYSA-N 0.000 description 1
- 229940071161 dodecylbenzenesulfonate Drugs 0.000 description 1
- DUYCTCQXNHFCSJ-UHFFFAOYSA-N dtpmp Chemical compound OP(=O)(O)CN(CP(O)(O)=O)CCN(CP(O)(=O)O)CCN(CP(O)(O)=O)CP(O)(O)=O DUYCTCQXNHFCSJ-UHFFFAOYSA-N 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229940116254 phosphonic acid Drugs 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- QVLTXCYWHPZMCA-UHFFFAOYSA-N po4-po4 Chemical compound OP(O)(O)=O.OP(O)(O)=O QVLTXCYWHPZMCA-UHFFFAOYSA-N 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- GTDKXDWWMOMSFL-UHFFFAOYSA-M tetramethylazanium;fluoride Chemical compound [F-].C[N+](C)(C)C GTDKXDWWMOMSFL-UHFFFAOYSA-M 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000004711 α-olefin Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0084—Antioxidants; Free-radical scavengers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/02—Anionic compounds
- C11D1/12—Sulfonic acids or sulfuric acid esters; Salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0047—Other compounding ingredients characterised by their effect pH regulated compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2082—Polycarboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/24—Organic compounds containing halogen
- C11D3/245—Organic compounds containing halogen containing fluorine
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/36—Organic compounds containing phosphorus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Biochemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention provides a post-Chemical Mechanical Polishing (CMP) cleaning fluid composition comprising: more than 2 ammonium salt chelating agents; a phosphoric acid chelating agent; an organic acid containing 1 or more carboxyl groups; a fluorine compound; an anionic surfactant; and water, whereby polishing residues, contaminants, and the like generated in the polishing step can be effectively removed.
Description
Technical Field
The present invention relates to a post-chemical mechanical polishing cleaning liquid composition, and more particularly, to a post-chemical mechanical polishing cleaning liquid composition capable of effectively removing polishing residues, contaminants, etc. generated in a polishing process without damaging a surface of a post-chemical mechanical polishing wafer.
Background
Recently, with the reduction of semiconductor design rule, the importance of the polishing surface quality will be maximized in manufacturing a submicron-sized semiconductor device.
A chemical mechanical polishing (chemical mechanical polishing; hereinafter referred to as "CMP") process may also be referred to as a planarization process, and refers to a process in which a physical process such as abrasion and a chemical process such as oxidation or chelation are combined to realize precise patterning. Specifically, the CMP process is performed by bonding a polishing slurry composition having an active chemical property, which mechanically rubs abrasive grains and surface protrusions of the polishing pad included in the polishing slurry composition against the surface of the semiconductor wafer to mechanically polish the surface of the semiconductor wafer, to the polishing pad rubbing the surface of the semiconductor wafer, thereby effectively removing the surplus substances used in layering.
In particular, the chemical components contained in the polishing slurry composition induce selective chemical reactions on the semiconductor wafer surface to selectively remove the semiconductor wafer surface, thereby enabling more optimal, wider planarization.
On the one hand, contaminants caused by residues generated during performing various processing operations such as multi-layer film formation, etching, and CMP processes or particles caused by the removed layers may be generated after the CMP process. These residues and contaminants cause electrical defects in the semiconductor device such as wire damage and surface damage of the heavy structure in the subsequent steps of forming metal wires and various structures. Therefore, performing a cleaning operation to remove residues or contaminants is an indispensable subsequent process after the CMP process.
On the other hand, when performing the CMP process, a cerium oxide slurry containing cerium oxide abrasive particles, which can minimize oxide erosion, is most commonly used to achieve a faster insulator polishing rate than a silicon dioxide slurry containing silicon dioxide (silica) particles.
However, the cerium oxide slurry has the following disadvantages: the cerium oxide particles carry Zeta potential (Zeta potential) of opposite charges to the surfaces of the silicon oxide film and the silicon nitride film, and thus are not easily removed in the subsequent cleaning process. If the subsequent steps are performed in a state where such a cerium oxide slurry residue remains on the semiconductor wafer, there are other problems that a short circuit occurs due to the residue and the resistance increases.
Currently, it contains hydrofluoric acid (Hydrofluoric acid, HF) and ammonia (NH) 4 OH) is used as the most effective wet cleaning agent for removing the cerium oxide slurry residue. However, in the cleaning process, the hydrofluoric acid not only excessively etches the silicon oxide film and other low dielectric substances to a static level or more, but also additionally performs a subsequent cleaning process for removing the hydrofluoric acid so as not to remain the hydrofluoric acid, which has a problem of an increase in process cost and process steps.
Therefore, there is a need in the art to develop a post-CMP cleaning liquid composition that can prevent re-adsorption of contaminants and the like generated during the post-CMP polishing process and that exhibits excellent cleaning ability without damaging the surface of a semiconductor wafer (particularly, a silicon oxide film).
(prior art literature)
(patent literature)
Patent document 1: korean patent laid-open publication No. 620260
Disclosure of Invention
(problem to be solved by the invention)
The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a post-chemical mechanical polishing cleaning liquid composition comprising: that is, the post-chemical mechanical polishing cleaning liquid composition is capable of effectively removing residual cerium oxide abrasive particles or particle (particle) contamination, organic contamination, metal contamination, and the like without damaging the surface of a semiconductor wafer after a chemical mechanical polishing process using a cerium oxide slurry, has good water rinsing properties, and is capable of stably cleaning the surface of a semiconductor wafer in a short time.
(measures taken to solve the problems)
According to one embodiment, the present invention provides a post-cmp cleaning fluid composition comprising: more than 2 ammonium salt chelating agents; a phosphoric acid chelating agent; an organic acid containing 1 or more carboxyl groups; a fluorine compound; an anionic surfactant; and water.
The pH of the post-cmp cleaning liquid composition of the present invention is preferably 5 to 7.
(effects of the invention)
In the post-chemical mechanical polishing cleaning liquid composition of the present invention, the anionic surfactant is a polyacrylic acid type or sulfonic acid type anionic surfactant, so that cerium oxide, organic substances, and the like remaining after the polishing step using the cerium oxide slurry are effectively removed, and the Zeta potential can be reduced to prevent re-adsorption of contaminants, and thus defects on the polished surface can be reduced. In particular, in the post-cmp cleaning liquid composition of the present invention, fluorine compound is contained as an etchant instead of hydrofluoric acid, thereby ensuring etching property for a silicon oxide film and easily removing cerium oxide and fine residual metal ions bonded to the surface of a semiconductor wafer by lift off. By using the post-cmp cleaning liquid composition of the present invention as described above, the cleaning effect can be maximized without damaging the surface of the semiconductor wafer, and thus a semiconductor device having improved performance and reliability can be manufactured.
Drawings
The following drawings in the present specification are examples of preferred embodiments of the present invention, and the technical idea of the present invention is made more understandable by combining the foregoing summary of the invention, so the present invention should not be construed as being limited to only what is described in the drawings.
Fig. 1 is a graph showing the etching evaluation result of the silicon oxide film of experimental example 2.
Fig. 2 is a flowchart showing a polishing (buffering) chemical mechanical polishing process flow.
Fig. 3 is a flow chart showing the flow of a contact (Touch) cmp process.
Fig. 4 is a flow chart illustrating an Isolation (Isolation) cmp process.
Detailed Description
The present invention will be described in more detail below.
The terms or words used in the present specification and claims should not be construed as limited to commonly understood or dictionary meanings, but should be construed as meaning and concept conforming to the technical idea of the present invention on the basis of the principle that the inventor can properly define the concept of terms in order to explain the invention thereof in the most preferable manner.
On the other hand, the pH can be measured at room temperature using an Orion StarA215 type pH measuring apparatus manufactured by the company Sieimer (Thermo) in the specification of the present invention, unless otherwise specified.
In the present specification, the Zeta potential (Zeta potential) is an index indicating the degree of surface charge of colloidal abrasive particles suspended or dispersed in a medium (water and/or an organic solvent), and is a value calculated in consideration of the intensity of an electric field applied to a particle movement speed, the hydrodynamic effect (viscosity, dielectric constant of a solvent), and the like when an electric field is externally applied to the colloid, and the colloidal particles migrate (move) in a direction opposite to the sign of the surface potential. The Zeta potential is the electrostatic charge value measured at the surface of the abrasive particle and the magnitude is a value indicative of the tendency of the abrasive particle to repel other particles or surfaces having a similar charge. The larger the Zeta potential is, the stronger the repulsive force between the two substances is, so that the dispersity and dispersion retention become high, whereas when the absolute value of the Zeta potential is close to 0, the electrostatic attraction between the particles promotes aggregation and sedimentation, the particles mutually aggregate, and the dispersity is lowered. In the post-CMP cleaning liquid composition of the present invention, the Zeta potential has an absolute value of greater than 45mV, so that the repulsive force between particles is increased, and the dispersibility is improved, thereby exhibiting excellent cleaning effects.
In the present specification, the Zeta potential surface potential is measured by using ZEN2600 Zeta sizer Nano Z (Malvern) and using an electroanalysis method, and the larger the absolute value of the measured value is, the larger the repulsive force between particles is, so that the cleaning effect is excellent.
Post-chemical mechanical polishing cleaning liquid composition
The post-chemical mechanical polishing cleaning liquid composition of the present invention comprises: more than 2 ammonium salt chelating agents; a phosphoric acid chelating agent; an organic acid containing 1 or more carboxyl groups; a fluorine compound; an anionic surfactant; and water.
According to the present inventors, when a polyacrylic acid type or sulfonic acid type anionic surfactant is contained as the anionic surfactant, it is possible to effectively remove cerium oxide, organic substances, and the like remaining after the polishing step using the cerium oxide slurry, and to reduce the Zeta potential to prevent re-adsorption of contaminants, so that defects on the polished surface can be reduced. In particular, in the post-cmp cleaning liquid composition of the present invention, the fluorine compound is contained as an essential component as an etchant in place of hydrofluoric acid, whereby the etching property for the silicon oxide film is ensured and cerium oxide and fine residual metal ions bonded to the surface of the semiconductor wafer can be easily removed (lift off). Therefore, if the post-cmp cleaning liquid composition (e.g., post-cmp cleaning composition) of the present invention is used, the cleaning effect of contaminants can be maximized without damaging the surface of the semiconductor wafer, and thus a semiconductor device with improved performance and reliability can be manufactured.
The post-CMP cleaning solution composition of the present invention as described above has the following properties when cleaning
To the point of
Compared with the conventional cleaning composition using hydrofluoric acid, the etching rate of the composition can provide excellent surface defect reduction effects of about 44% for a silicon oxide film and about 93% for a silicon nitride film.
The post-cmp cleaning liquid composition of the present invention can be used for effectively cleaning the polishing residue after performing a chemical mechanical polishing process on a semiconductor wafer including a silicon oxide film and optionally a silicon nitride film or a polysilicon film.
In this case, the chemical mechanical polishing process may include a polishing (buffering) chemical mechanical polishing process, a contact (Touch) chemical mechanical polishing process, or an Isolation (Isolation) chemical mechanical polishing process, etc.
Specifically, referring to fig. 2, the polishing chemical mechanical polishing process may include all planarization processes performed for the purpose of removing steps or a part of an oxide film after forming the oxide film for insulation on a conductive pattern such as polysilicon.
On the other hand, referring to fig. 3, the contact chemical mechanical polishing process may include all planarization processes performed to remove contaminants generated on the substrate surface after the chemical mechanical polishing process, the deposition process, or the etching process, for example, processes performed to remove residues (surface particles) of the polishing process remaining on the surface of the polishing target film, processes performed to remove embedded particles (embedded particle) generated in the deposition process, or processes performed to planarize the polishing surface from which peeling (rip-out) occurs due to the etching process, or the like, and remove defects (defect removal). In this case, the polishing target film may be at least one of an oxide film, a nitride film, and a polysilicon film.
On the other hand, referring to fig. 4, the isolation chemical mechanical polishing process is a process for removing a film excessively deposited or formed on the entire surface of the semiconductor substrate. As specific examples may include: (a) A step of isolating the oxide film by using the nitride film as a polishing stop film, a step of isolating the oxide film by using polysilicon as a polishing stop film, or the like.
Hereinafter, each component of the post-chemical mechanical polishing liquid composition (e.g., post-chemical mechanical polishing liquid composition) of the present invention will be described in more detail.
(A) Ammonium salt chelating agent
The cleaning liquid composition after chemical mechanical polishing comprises more than 2 ammonium salt chelating agents.
The ammonium salt chelating agent may be coordinately bound (complex compound) with cerium oxide particles or fine residual metal particles stripped (lift off) by an etchant to form a complex, and the deactivated metal ions may be easily dissolved in a cleaning composition to be easily removed. In addition, the ammonium salt chelating agent functions as a pH buffer by the action of the ammonium salt component, and can prevent the pH of the cleaning liquid composition from rapidly changing after chemical mechanical polishing, so that the re-adsorption of residual abrasive grains and pollutants is prevented, and the occurrence of defects on the surface of a semiconductor wafer can be effectively improved.
The Ammonium salt chelating agent may include an organic acid containing an Ammonium salt, and as a representative example, may include at least two or more selected from the group consisting of Ammonium Citrate (AC), ammonium Oxalate (Ammonium Oxalate), ammonium carbonate (Ammonium Carbonate), ammonium Acetate (Ammonium Acetate), ammonium phosphate (Ammonium Phosphate, AP), ammonium Sulfate (Ammonium Sulfate), ammonium benzoate (Ammonium Benzonate) and Ammonium bicarbonate (Ammonium Bicarbonate), and more specifically, the Ammonium salt chelating agent may include at least two or more selected from the group consisting of Ammonium Citrate, ammonium Oxalate, ammonium carbonate, ammonium Acetate and Ammonium phosphate, and preferably, may include at least two or more selected from the group consisting of Ammonium Citrate, ammonium carbonate, ammonium Acetate and Ammonium phosphate.
The ammonium salt chelating agent may be included in an amount of 0.5 to 10 wt% based on the total weight of the chemical mechanical polishing post-cleaning liquid composition, and specifically, may be included in an amount of 2.0 to 9.0 wt%.
When the ammonium salt chelating agent is contained in the above range, the chelating component capable of reacting with the metal ions can be sufficiently ensured, and therefore cerium oxide particles and other polishing byproducts can be effectively removed, and the rapid pH change of the cleaning liquid composition after chemical mechanical polishing can be suppressed, and precipitation of cerium oxide particles and other polishing byproducts and the like can be prevented, and therefore, the occurrence of defects on the surface of a semiconductor wafer can be effectively improved.
(B) Phosphoric acid chelating agent
The post-CMP cleaning solution composition of the present invention may comprise more than 1 phosphoric acid chelating agent.
Like the ammonium salt chelating agent, the phosphoric acid chelating agent can coordinate and bind with cerium oxide that is peeled off (lift off) or residual metal ions to form a complex, and thus can easily remove metal ions.
The phosphoric acid chelating agent is a compound containing a phosphate group (phosphate group) or an organic phosphate group (PhosphonicAcid Group) as a phosphoric acid organic acid in a molecular structure, and as a representative example, 1 or more compounds selected from the group consisting of the following compounds may be specifically contained 2 or more compounds: ethylene diphosphonic acid (ethylidene diphosphonic acid), 1-hydroxyethylene-1, 1' -diphosphonic acid (1-hydroxy ethylidene-1,1-diphosphoric acid; HEDP), 1-hydroxypropyl-1, 1' -biphosphonic acid (1-hydroxy propylidene-1,1-diphosphonic acid), 1-hydroxybutyl-1, 1' -biphosphonic acid (1-hydroxy butylidene-1,1-diphosphonic acid), ethylamino bis (methylenephosphonic acid) (ethyllaminobis), dodecylamino bis (methylenephosphonic acid) (dodecocyllanobis), 2-phosphono-butane-1, 2,4-tricarboxylic acid (2-Phosphonobutane-1, 2, 4-tricarballylic acid), nitrilotris (methylenephosphonic acid) (nitrilotris), ethylenediamine bis (methylenephosphonic acid) (ethyleneethyleneamines) 1,3-propylenediamine bis (methylenephosphonic acid) (1, 3-propylenediamine bis), ethylenediamine tetra (methylenephosphonic acid) (ethylene diamine tetra (methylene phosphoric acid), EDTMPA), ethylenediamine tetra (vinylphosphoric acid), 1,3-propylenediamine tetra (methylenephosphonic acid) (1, 3-propyleneimine tetra), 1, 2-diaminopropane tetra (methylenephosphonic acid) (1, 2-diaminopropane tetra (methylenephosphonic acid), 1,6-hexamethylenediamine tetra (methylenephosphonic acid) (1, 6-hexamethyleneimine tetra (methylenephosphonic acid)), hexamethylenediamine tetra (methylenephosphonic acid) (hexamethyleneimine), diethylenetriamine tetra (methylenephosphonic acid), diethylenetriamine penta (methylenephosphonic acid) (diethylenetriamine penta), diethylenetriamine penta (methylphosphonic acid), N '-ethylenediamine tetra (methylenephosphonic acid) (N, N' -ethyleneimine amine etra), diethylenetriamine penta (vinylphosphoric acid) (diethylenetriamine penta), triethylenetetramine hexa (methylenephosphonic acid) (Triethylenetetramine hex), triethylenetetramine hexa (vinylphosphoric acid) (Triethylenetetramine hex), hydrogen phosphate (hydrogen phosphate), diammonium hydrogen phosphate (diammonium hydrogen phosphate), triammonium hydrogen phosphate (triammonium hydrogen phosphate), monobutyl phosphate (monobutyl phosphate), monopentyl phosphate (monoamyl phosphate), mono-nonyl phosphate (monononyl phosphate), mono-hexadecyl phosphate (monocetyl phosphate), mono-phenyl phosphate (monophenyl phosphate), and mono-benzyl phosphate (monobenzyl phosphate).
The phosphoric acid-based chelating agent may be included in an amount of 0.1 to 5 wt%, and particularly, may be included in an amount of 0.1 to 3.0 wt%, based on the total weight of the post-cmp cleaning liquid composition.
When the phosphoric acid chelating agent is contained in the above range, the chelating component capable of reacting with the metal ion can be sufficiently ensured to effectively remove cerium oxide particles and other polishing byproducts, and thus the occurrence of surface defects can be effectively improved. In addition, the rapid change of the pH value of the cleaning liquid composition after chemical mechanical polishing can be suppressed, and the precipitation of cerium oxide particles, other polishing byproducts and the like can be prevented, so that the defects on the surface of the semiconductor wafer can be effectively reduced.
(C) Organic acid
The post-chemical mechanical polishing cleaning liquid composition of the present invention may contain 1 or more organic acids containing 1 or more and 2 or less carboxyl groups.
The organic acid is a substance contributing to the dissolution of the oxidized conductive substance in the cleaning liquid, and is useful as an oxidized metal dissolution agent.
When 1 or more and 2 or less carboxyl (-COOH) moieties in the organic acid are adsorbed on the surface of the ceria abrasive particles, the ceria particles are oxidized to improve the solubility of the ceria in the cleaning liquid, and thus the removal efficiency can be improved. That is, as shown in the following reaction scheme 1, the organic acid contained as the solvent dissolves to provide H + The ions and electrons "e" are supplied to the cerium oxide reduction reaction shown in the following reaction formula 2, thereby generating reduced Ce (III) ions. The reduced Ce (III) ions are then dissolved into Ce (OH) under hydration 3 So that it can be easily dissolved in the cleaning composition to be removed.
[ reaction type 1]
R-COOH→R-COO - +H + +e
[ reaction type 2]
Ce(IV)+e→Ce(III)
As a representative example, the organic acid may include at least one selected from the group consisting of Citric acid (CTA), lactic acid (Lactic acid), gluconic acid (Gluconic acid), maleic acid (Maleic acid), malic acid (Malic acid), and Oxalic acid (Oxalic acid, OXA), and specifically, at least one selected from the group consisting of Citric acid, lactic acid, gluconic acid, and Oxalic acid.
The organic acid may be included in an amount of 0.5 to 10 wt%, specifically, 0.5 to 8.0 wt% or 0.5 to 5.0 wt%, based on the total weight of the post-cmp cleaning liquid composition.
When the organic acid is contained in the above range, H + The supply of ions and electrons "e" is smooth and easyThe cerium oxide reduction reaction is performed, so that the problem of precipitation of cerium oxide particles due to a decrease in solubility in the cleaning liquid can be avoided.
(D) Fluorine compound
In the post-chemical mechanical polishing cleaning liquid composition of the present invention, a fluorine compound is contained as an essential component as an etchant, instead of hydrofluoric acid.
The fluorine compound contains fluorine ions and plays a role of etching the surface of the silicon oxide film and stripping (lift off) cerium oxide particles or fine residual metal ions bonded to the surface of the semiconductor wafer (refer to the following reaction formula 3).
[ reaction type 3]
As a representative example, the fluorine compound may include at least one fluorine compound selected from the group consisting of ammonium fluoride (Ammonium fluoride, AF), ammonium bifluoride (Ammonium bifluoride) and tetramethylammonium fluoride (Tetramethylammonium fluoride; TMAF), and more specifically, may include ammonium fluoride.
The fluorine compound may be included in an amount of 2.0 to 15.0 wt% based on the total weight of the post-cmp cleaning liquid composition.
When the fluorine compound is contained at less than 2.0 wt%, the etching rate of the silicon oxide film is drastically reduced due to the lack of fluorine ions, so that the peeling (lift off) effect is very small. In addition, when the fluorine compound is contained at more than 15.0 wt%, an overetching phenomenon occurs due to an increase in the etching rate of the silicon oxide film during the cleaning, and an increase in the surface Roughness (roughess) of the silicon oxide film results in an increase in the occurrence rate of surface defects.
Preferably, the fluorine compound may be included in an amount of 2.0 to 10.0 wt% based on the total weight of the post-chemical mechanical polishing cleaning liquid composition, and in particular, the fluorine compound may be included in an amount of 3.0 to 8.0 wt%.
(E) Anionic surfactants
The post-cmp cleaning liquid composition of the present invention may contain an anionic surfactant as a surface modifier.
The anionic surfactant is adsorbed on the surface of the semiconductor wafer and can modify the surface potential of the semiconductor wafer to be Negative (Negative), so that re-adsorption of the slurry particles after cleaning can be prevented. For example, in the case where the anti-abrasion film of the semiconductor wafer is formed of a silicon oxide film or a silicon nitride film, since it has a Positive (Positive) potential, metal particles or the like are adsorbed again and are liable to be contaminated. Therefore, if the surface of the wear protection film is modified to a Negative (Negative) potential using an anionic surfactant, the Zeta potential (mV) value is reduced to a Negative value, which reduces the adsorption of contaminants.
As a representative example, the anionic surfactant may include at least one selected from the group consisting of polyacrylic acid (PAA) compounds, polyacrylic acid ammonium salt compounds, polyacrylic acid maleic acid, sulfonic acid compounds, sulfonate salt compounds, acrylic acid/styrene copolymers, polyacrylic acid/styrene copolymers, polyacrylamide/acrylic acid copolymers, polyacrylic acid/sulfonic acid copolymers, and polyacrylic acid/maleic acid copolymers. Specifically, the anionic surfactant may include at least one of a polyacrylic compound and a sulfonic acid compound.
Specifically, the sulfonic acid compound may include at least one selected from the group consisting of a sulfonic acid compound selected from the group consisting of alkylaryl sulfonate, alkyl ether sulfonate, alkyl sulfonate, aryl sulfonate, polystyrene sulfonate, alkane sulfonate, alpha-olefin sulfonate, dodecylbenzene sulfonate, and alkylbenzene sulfonate.
The anionic surfactant may be included in an amount of 1.0 to 10 wt%, specifically, 1.0 to 8.0 wt%, based on the total weight of the post-cmp cleaning liquid composition.
When the anionic surfactant is contained in the above range, the surface of the wear-resistant film is easily modified, and the concentration of the cleaning liquid composition after chemical mechanical polishing is adjusted to prevent the cleaning composition from becoming cloudy.
(F) Water and its preparation method
The post-chemical mechanical polishing cleaning liquid composition of the present invention may contain water as a solvent, and the water can control the easiness of pH adjustment, handling property, safety, reactivity with a surface to be polished, and the like.
The water may be deionized water, ion-exchanged water, ultrapure water, or the like, and among them, ultrapure water filtered by an ion-exchange resin is preferably used.
The water can be contained in the balance of the post-chemical mechanical polishing cleaning liquid composition, and unless otherwise specified, the balance of the post-chemical mechanical polishing cleaning liquid composition excluding the contents of (a) the ammonium salt chelating agent, (B) the phosphoric acid chelating agent, (C) the organic acid, (D) the fluorine compound, and (E) the anionic surfactant is all water.
On the other hand, the pH of the post-cmp cleaning liquid composition of the present invention may be 4 to 7, specifically 5 to 7, and preferably 5 to 6.
When the pH of the post-chemical mechanical polishing cleaning liquid composition of the present invention satisfies the above range, an excellent cleaning effect can be achieved. Specifically, when the pH of the cleaning liquid composition after chemical mechanical polishing is 4 or less, the Zeta potential rises to a positive value (+mv) and surface modification of the wear-resistant film (for example, silicon nitride film) cannot be achieved, so that particles are again adsorbed and surface defects increase. In addition, when the pH of the cleaning liquid composition after chemical mechanical polishing is 7 or more, hydrogen ions (H + ) Concentration decrease to fail to cause the action of fluorine compound as etchant and reduction reaction of cerium oxide [ Ce (IV) +e→Ce (III)]Thus leading to an increase in surface defects.
(G) PH regulator
The post-CMP cleaning solution composition of the present invention can optionally comprise a pH adjustor to maintain the pH range described above.
The pH adjustor is not related to the performance of the cleaning liquid composition after chemical mechanical polishing, but as a component capable of adjusting the optimum pH, an alkaline compound containing both a primary amine group (primary amine group) and a primary alcohol group (primary alcohol group) may be used. As a representative example, the pH adjuster may include at least one selected from the group consisting of ammonia, methylpropanol amine (ammonium methyl propanol; AMP), monoethanolamine (MEA), triethanolamine (trithanolamine) and Tromethamine (Tromethamine), and specifically, may include monoethanolamine or Triethanolamine.
The pH adjustor may be contained in an amount such that the post-cmp cleaning liquid composition of the present invention maintains the above pH range to achieve an excellent cleaning effect. For example, the post-chemical mechanical polishing cleaning solution composition of the present invention may contain the pH adjustor in a range of 0.5 wt.% to 10 wt.%.
The post-cmp cleaning liquid composition of the present invention as described above is applied after a chemical mechanical polishing process using a cerium oxide slurry composition to effectively remove cerium oxide, organic matters, and the like remaining after polishing, and reduces the Zeta potential of the substrate surface to a negative value to prevent re-adsorption of contaminants, so that defects of the polished surface can be reduced. In addition, the water rinsing performance by water is also good, the surface of the semiconductor wafer can be cleaned stably in a short time, and the cleaning method has a slight silicon oxide film etching function, so that the effect of the cleaning method in which the chemical action of the cleaning liquid after the polishing process and the physical action of the PVA brush are parallel can be maximized. Therefore, the cleaning liquid composition after chemical mechanical polishing can realize a semiconductor device with improved performance and reliability.
Hereinafter, the present invention will be described in detail with reference to the following examples and comparative examples. However, the technical idea of the present invention is not limited thereto.
Example (example)
Examples 1 to 10
The following chemical mechanical polishing post-cleaning liquid compositions of examples 1 to 10 were prepared by adding an ammonium salt chelating agent, a phosphoric acid chelating agent, an organic acid, a fluorine compound, and an anionic surfactant (polystyrene sulfonate, weight average molecular weight: 75000 g/mol) to water according to the composition of Table 1 below. In this case, the pH of the cleaning liquid compositions after chemical mechanical polishing of examples 1 to 10 can be adjusted by adding a pH adjuster (monoethanolamine; MEA) thereto.
The Zeta potential of the prepared post-cmp cleaning liquid composition was measured by an electroanalysis method using ZEN2600 Zetasizer Nano Z (Malvern), and the results are shown in table 1 below. In this case, the larger the absolute value of the measured value is, the larger the repulsive force between particles is, and therefore the cleaning effect is excellent.
TABLE 1
In the above table 1, abbreviations have the following meanings.
DI: distilled water (distilled water)
AC: ammonium Citrate (Ammonium Citrate)
AP: ammonium phosphate (Ammonium Phosphate)
EDTMPA: ethylenediamine tetra (methylenephosphonic acid)
HEDP: 1-hydroxyethylidene-1, 1' -diphosphonic acid
OXA: oxalic acid (Oxalic acid)
CTA: citric acid (Citric acid)
AF: ammonium fluoride
Comparative example
Comparative examples 1 to 7
The following chemical mechanical polishing cleaning liquid compositions of comparative examples 1 to 7 were prepared by adding an ammonium salt type chelating agent, a phosphoric acid type chelating agent, an organic acid, a fluorine compound and an anionic surfactant (polystyrene sulfonate, weight average molecular weight: 75000 g/mol) to water according to the compositions shown in Table 2 below. In this case, the pH of the cleaning liquid composition after chemical mechanical polishing of comparative examples 1 to 7 can be adjusted by adding a pH adjuster (monoethanolamine; MEA) thereto.
The Zeta potential of the prepared post-cmp cleaning liquid composition was measured by an electroanalysis method using ZEN2600 Zetasizer Nano Z (Malvern), and the results are shown in table 2 below.
TABLE 2
In the above table 2, abbreviations have the following meanings.
DI: distilled water
AC: ammonium Citrate (Ammonium Citrate)
AP: ammonium phosphate (Ammonium Phosphate)
EDTMPA: ethylenediamine tetra (methylenephosphonic acid)
HEDP: 1-hydroxyethylidene-1, 1' -diphosphonic acid
OXA: oxalic acid (Oxalic acid)
CTA: citric acid (Citric acid)
AF: ammonium fluoride
(Experimental example)
Experimental example 1 cleaning ability evaluation experiment
After the Si wafer on which the multilayer film including the silicon oxide film and the silicon nitride film was deposited was mounted to a chemical mechanical polishing apparatus (KCTECH company, elastic NT), a chemical mechanical polishing process was performed at 60rpm for 30 seconds at 1psi using a chemical mechanical polishing slurry composition (KCTECH company, KCS 3100).
After the chemical mechanical polishing process was completed, the Si wafer after the chemical mechanical polishing process was placed in a cleaning tank (PVA Brush cleaning tank: PVA Brush cleaning box) (Brush corporation) and cleaning was performed for 7 seconds using hydrofluoric acid (HF) in Brush 1.
Next, in Brush 2, i) the post-chemical-mechanical polishing cleaning liquid compositions prepared in examples 1 to 10, ii) the post-chemical-mechanical polishing cleaning liquid compositions prepared in comparative examples 1 to 7, and iii) a reference example (SC-1 (Standard Clean-1), ammonia: hydrogen peroxide: water = 1:1:5 weight ratio, APM) was subjected to an additional cleaning process for 30 seconds, rinsed with deionized water, and then dried by injecting nitrogen gas.
Then, whether residues and contaminants on the Si wafer surface were removed was measured using an inspection apparatus (SP 2XP (KLA corporation)), and the results thereof are shown in table 3 below.
In this case, residues and contaminants having a diameter of 63nm or more were evaluated as defects for the silicon oxide film, and residues and contaminants having a diameter of 52nm or more were evaluated as defects for the silicon nitride film.
[ evaluation results ]
X: when more than 1000 defects are measured on the respective film surfaces
Delta: when 500 to 1000 defects are measured on the respective film surfaces
O: when less than 500 defects are measured on the respective film surface
TABLE 3
Referring to table 3, it is clear that the defect rates of the surfaces of the silicon oxide film and the silicon nitride film were significantly improved in the case of using the post-cmp cleaning liquid compositions of examples 1 to 10 of the present invention, as compared with the case of using the post-cmp cleaning liquid compositions of reference example and comparative examples 1 to 7.
Experimental example 2 silicon oxide film etching evaluation experiment
After washing an oxide film wafer having an area of 2×2cm by spraying distilled water, the oxide film wafer was dried, and a PRE-thickness (PRE-thickness) of the oxide film wafer was measured using a Reflectometer (Filmmetrics).
Next, the oxide film wafers were immersed (dipping) in the post-cmp cleaning liquid compositions of examples 2 and 7 and the post-cmp cleaning liquid compositions prepared in comparative examples 3 and 6, respectively, at room temperature (25±5 ℃) or 60 ℃.
Then, the oxide film wafer was taken out, washed with distilled water, and dried, and then the post thickness (post thickness) was measured.
The etching rate (etch) was calculated using the following [ formula 1], and the results are shown in table 4 and fig. 1 below.
[ 1]
TABLE 4
Referring to table 4 and fig. 1, it is apparent that the etching rate of the oxide film wafer increases in proportion to the content of the fluorine compound contained in the cleaning liquid composition after chemical mechanical polishing.
Specifically, it was found that the etching rate of the oxide film wafer was highest in the post-cmp cleaning liquid composition of example 7, which contained the highest amount of fluorine compound, whereas the etching rate of the oxide film wafer was lower in the post-cmp cleaning liquid composition of comparative example 3, which contained no fluorine compound in the post-cmp cleaning liquid composition, than in the post-cmp cleaning liquid composition of comparative example 6, which contained 1 wt% of fluorine compound.
As is clear from the above results, the etching rate of the desired silicon oxide film can be controlled by adjusting the content of the fluorine compound contained in the cleaning liquid composition after chemical mechanical polishing.
Claims (16)
1. A post-cmp cleaning fluid composition comprising:
more than 2 ammonium salt chelating agents;
a phosphoric acid chelating agent;
an organic acid containing 1 or more carboxyl groups;
a fluorine compound;
an anionic surfactant; and
and (3) water.
2. The post-cmp cleaning fluid composition of claim 1 wherein,
the ammonium salt chelating agent is at least two or more selected from the group consisting of ammonium citrate, ammonium oxalate, ammonium carbonate, ammonium acetate, ammonium phosphate, ammonium sulfate, ammonium benzoate and ammonium bicarbonate.
3. The post-cmp cleaning fluid composition of claim 1 wherein,
comprises 0.5 to 10.0 wt% of the ammonium salt chelating agent, based on the total weight of the chemical mechanical polishing cleaning liquid composition.
4. The post-cmp cleaning fluid composition of claim 1 wherein,
the phosphoric acid chelating agent is selected from ethylene diphosphonic acid, 1-hydroxyethylene-1, 1' -diphosphonic acid, 1-hydroxypropylene-1, 1' -diphosphonic acid, 1-hydroxybutylidene-1, 1' -diphosphonic acid, ethylamino bis (methylenephosphonic acid), dodecylamino bis (methylenephosphonic acid), 2-phosphono-butane-1, 2,4-tricarboxylic acid, nitrilotris (methylenephosphonic acid), ethylenediamine bis (methylenephosphonic acid), 1,3-propylenediamine bis (methylenephosphonic acid), ethylenediamine tetra (ethylene phosphonic acid), ethylenediamine tetra (vinylphosphonic acid), 1,3-propylenediamine tetra (methylenephosphonic acid), 1, 2-diaminopropane tetra (methylenephosphonic acid), 1,6-hexamethylenediamine tetra (methylenephosphonic acid), diethylenetriamine penta (methylphosphonic acid), N, N, N ', N ' -ethylenediamine tetra (methylenephosphonic acid), diethylenetriamine penta (ethylenephosphonic acid), triethylenetetramine (triethylenephosphate), monobutylene phosphate, monohydrogen phosphate, and at least one of the group of monoethylene phosphate, mono-or mono-butylene phosphate.
5. The post-cmp cleaning fluid composition of claim 1 wherein,
comprises 0.1 to 5 wt% of the phosphoric acid chelating agent, based on the total weight of the chemical mechanical polishing cleaning liquid composition.
6. The post-cmp cleaning fluid composition of claim 1 wherein,
the organic acid is at least one selected from the group consisting of citric acid, lactic acid, gluconic acid, maleic acid, malic acid, and oxalic acid.
7. The post-cmp cleaning fluid composition of claim 1 wherein,
comprising from 0.5 wt% to 10 wt% of the organic acid, based on the total weight of the post-cmp cleaning liquid composition.
8. The post-cmp cleaning fluid composition of claim 1 wherein,
the fluorine compound is at least one selected from the group consisting of ammonium fluoride, ammonium bifluoride and tetramethylammonium fluoride.
9. The post-cmp cleaning fluid composition of claim 1 wherein,
comprising 2.0 to 15.0 wt% of the fluorine compound, based on the total weight of the post-chemical mechanical polishing cleaning liquid composition.
10. The post-cmp cleaning fluid composition of claim 1 wherein,
the anionic surfactant is at least one selected from the group consisting of polyacrylic acid compounds, polyacrylic acid ammonium salt compounds, polyacrylic acid maleic acid, sulfonic acid compounds, sulfonate salt compounds, acrylic acid/styrene copolymers, polyacrylic acid/styrene copolymers, polyacrylamide/acrylic acid copolymers, polyacrylic acid/sulfonic acid copolymers, and polyacrylic acid/maleic acid copolymers.
11. The post-cmp cleaning fluid composition of claim 1 wherein,
the anionic surfactant comprises at least one of polyacrylic compounds and sulfonic compounds.
12. The post-cmp cleaning fluid composition of claim 1 wherein,
comprising from 1.0 wt% to 10.0 wt% of the anionic surfactant, based on the total weight of the post-cmp cleaning liquid composition.
13. The post-cmp cleaning fluid composition of claim 1 wherein,
the post-chemical mechanical polishing cleaning fluid composition further comprises a pH regulator.
14. The post-cmp cleaning fluid composition of claim 13 wherein,
the pH adjustor comprises a compound comprising both a primary amine group and a primary alcohol group.
15. The post-cmp cleaning fluid composition of claim 13 wherein,
the pH adjuster includes at least one selected from the group consisting of ammonia, methyl propanolamine, monoethanolamine, triethanolamine, and tromethamine.
16. The post-cmp cleaning fluid composition of claim 1 wherein,
the pH of the cleaning liquid composition after chemical mechanical polishing is 5 to 7.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2021-0140023 | 2021-10-20 | ||
| KR1020210140023A KR20230056230A (en) | 2021-10-20 | 2021-10-20 | Post-cmp cleaner composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115992031A true CN115992031A (en) | 2023-04-21 |
Family
ID=85994357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211286061.XA Pending CN115992031A (en) | 2021-10-20 | 2022-10-20 | Post-chemical mechanical polishing cleaning liquid composition |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR20230056230A (en) |
| CN (1) | CN115992031A (en) |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1247107A (en) * | 1998-09-07 | 2000-03-15 | 日本电气株式会社 | Matrix cleaning method and its cleaning liquid |
| JP2007298930A (en) * | 2006-04-07 | 2007-11-15 | Kao Corp | Removing agent composition |
| CN101228481A (en) * | 2005-02-25 | 2008-07-23 | Ekc技术公司 | Method to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric |
| CN102131911A (en) * | 2008-09-07 | 2011-07-20 | 朗姆研究公司 | Cleaning solution formulations for substrates |
| EP3118295A1 (en) * | 2015-07-13 | 2017-01-18 | The Procter and Gamble Company | Glycol ether solvents in liquid cleaning compositions to remove stains from surfaces |
| CN108659997A (en) * | 2017-03-28 | 2018-10-16 | 东友精细化工有限公司 | Cleaning masks liquid composition and its manufacturing method and cleaning masks liquid pre-composition |
| US20190390139A1 (en) * | 2018-06-26 | 2019-12-26 | Versum Materials Us, Llc | Post Chemical Mechanical Planarization (CMP) Cleaning |
| US20200255770A1 (en) * | 2019-02-08 | 2020-08-13 | Entegris, Inc. | Ceria removal compositions |
| CN113166684A (en) * | 2018-12-10 | 2021-07-23 | 恩特格里斯公司 | post-CMP cleaning composition |
| KR102280853B1 (en) * | 2020-05-06 | 2021-07-23 | 주식회사 이엔에프테크놀로지 | Post-cmp cleaning composition |
| CN113195699A (en) * | 2018-12-21 | 2021-07-30 | 凯斯科技股份有限公司 | Detergent composition and washing method using same |
| TW202142681A (en) * | 2020-05-12 | 2021-11-16 | 日商富士軟片電子材料股份有限公司 | Cleaning solution, method for cleaning semiconductor substrate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6030932A (en) | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
-
2021
- 2021-10-20 KR KR1020210140023A patent/KR20230056230A/en unknown
-
2022
- 2022-10-20 CN CN202211286061.XA patent/CN115992031A/en active Pending
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1247107A (en) * | 1998-09-07 | 2000-03-15 | 日本电气株式会社 | Matrix cleaning method and its cleaning liquid |
| CN101228481A (en) * | 2005-02-25 | 2008-07-23 | Ekc技术公司 | Method to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric |
| JP2007298930A (en) * | 2006-04-07 | 2007-11-15 | Kao Corp | Removing agent composition |
| CN102131911A (en) * | 2008-09-07 | 2011-07-20 | 朗姆研究公司 | Cleaning solution formulations for substrates |
| EP3118295A1 (en) * | 2015-07-13 | 2017-01-18 | The Procter and Gamble Company | Glycol ether solvents in liquid cleaning compositions to remove stains from surfaces |
| CN108659997A (en) * | 2017-03-28 | 2018-10-16 | 东友精细化工有限公司 | Cleaning masks liquid composition and its manufacturing method and cleaning masks liquid pre-composition |
| US20190390139A1 (en) * | 2018-06-26 | 2019-12-26 | Versum Materials Us, Llc | Post Chemical Mechanical Planarization (CMP) Cleaning |
| CN110643434A (en) * | 2018-06-26 | 2020-01-03 | 弗萨姆材料美国有限责任公司 | Post Chemical Mechanical Planarization (CMP) clean |
| CN113166684A (en) * | 2018-12-10 | 2021-07-23 | 恩特格里斯公司 | post-CMP cleaning composition |
| CN113195699A (en) * | 2018-12-21 | 2021-07-30 | 凯斯科技股份有限公司 | Detergent composition and washing method using same |
| US20200255770A1 (en) * | 2019-02-08 | 2020-08-13 | Entegris, Inc. | Ceria removal compositions |
| KR102280853B1 (en) * | 2020-05-06 | 2021-07-23 | 주식회사 이엔에프테크놀로지 | Post-cmp cleaning composition |
| TW202142681A (en) * | 2020-05-12 | 2021-11-16 | 日商富士軟片電子材料股份有限公司 | Cleaning solution, method for cleaning semiconductor substrate |
Non-Patent Citations (1)
| Title |
|---|
| 王艳芬;: "新型循环水冷却系统清洗剂的研究", 科技情报开发与经济, no. 15, 25 May 2009 (2009-05-25) * |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20230056230A (en) | 2023-04-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102414343B1 (en) | Post chemical mechanical planarization(cmp) cleaning | |
| US7851426B2 (en) | Cleaning liquid and cleaning method using the same | |
| EP1569267A1 (en) | Cleaning composition, method for cleaning semiconductor substrate, and process for manufacturing semiconductor device | |
| TWI736567B (en) | Composition for post chemical-mechanical- polishing cleaning | |
| US10844325B2 (en) | Composition for post chemical-mechanical-polishing cleaning | |
| KR20010049276A (en) | Cleaning solution for substrates of electronic materials | |
| KR20200038014A (en) | Surface treatment composition and surface treatment method using the same | |
| JP2008210990A (en) | Cleaning agent for semiconductor device, and cleaning method of semiconductor device using the same | |
| JP6966444B2 (en) | Surface treatment composition and surface treatment method using the same | |
| CN113195699B (en) | Detergent composition and washing method using the same | |
| US10865361B2 (en) | Composition for post chemical-mechanical-polishing cleaning | |
| CN115992031A (en) | Post-chemical mechanical polishing cleaning liquid composition | |
| KR20200118556A (en) | Surface treatment composition and surface treatment method using the same | |
| KR102399811B1 (en) | Post metal film chemical mechanical polishing cleaning solution | |
| Park et al. | Surface preparation in CMP process; post CMP cleaning and defects | |
| Park et al. | Fundamentals of post-CMP cleaning | |
| WO2022047053A1 (en) | Post chemical mechanical planarization (cmp) cleaning |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |