CN102394627A - High voltage level shift circuit based on integrated capacitor - Google Patents
High voltage level shift circuit based on integrated capacitor Download PDFInfo
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- CN102394627A CN102394627A CN2011102978015A CN201110297801A CN102394627A CN 102394627 A CN102394627 A CN 102394627A CN 2011102978015 A CN2011102978015 A CN 2011102978015A CN 201110297801 A CN201110297801 A CN 201110297801A CN 102394627 A CN102394627 A CN 102394627A
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Abstract
The invention relates to a high voltage level shift circuit based on an integrated capacitor, comprising an oscillator unit, a transmission gate unit, a base amplifier unit, a detection unit, a comparator unit, an integrated capacitor unit and a loop resistor, wherein a digital control voltage input end is connected with the transmission gate unit; the output end of the oscillator unit is connected with the transmission gate unit; the output end of the transmission gate unit is connected with the positive pole end of the integrated capacitor unit; the positive pole end of the integrated capacitor unit is connected with the output end of the transmission gate unit, the negative pole end of the integrated capacitor unit is connected with the loop resistor and the input end of the base amplifier unit; and the loop resistor is arranged between the negative pole output end of the integrated capacitor unit and the input end of the base amplifier unit. The invention has the beneficial effect that the level shift circuit is realized by the integrated capacitor unit, overall level shift of the input voltage signal can be realized, i.e. the high level potential and low level potential of the input voltage signal together shift for the same amplitude.
Description
Technical field
The invention belongs to electronic technology field, relate to design about the high voltage level shift circuit of integrated capacitor.
Background technology
The conversion of signal relates to the use of level displacement circuit between the circuit module of the inner different electrical power voltage of semiconductor chip.Semiconductor power device technology development at present is swift and violent, and the operating voltage of application request is increasingly high, can reach kilovolt high voltage of level.But the drive control signal of semiconductor power device is produced by common digital signal circuit usually, and like TTL (transistor-transistor logic, Transistor-Transistor Logic) signal circuit, the amplitude of its voltage is generally several volts.Therefore, the conversion of signal between low-voltage circuit and high-tension circuit is more and more important, simultaneously along with the rising of high-pressure section voltage, and the shift transformation of this high-low level more and more difficult that can become.
The high voltage level shift circuit can be made up of discrete component, adopts the mode of pulse transforming or the mode of photoelectricity coupling to realize usually.The linear scope of photoelectricity coupled transfer is little, and operating current is low, only is suitable for the application of little electric current, and the mode of pulse transforming is to being easy to generate distortion.But the maximum shortcoming of this dual mode be not easy to integrated, so in integrated circuit, seldom adopt based on the high voltage level shift circuit of this dual mode.
A kind of in the market integrated high voltage level shift circuit is as shown in Figure 1.Wherein VH is high-end floating power supply, and VB is high-end floating ground, and M1 and M2 must be the high voltage PMOS pipe, and this circuit has less power consumption.But this circuit between the grid and source electrode of M1 and M2 pipe, need bear very high voltage between drain electrode and the source electrode when high-voltage applications.So in this circuit implementation process, the design and processes of high-low voltage device is made more complicated, and along with the operating voltage of high-pressure section is increasingly high, it is difficult more that the isolation of high-low voltage device will become, and cost is also increasingly high.
The structure of capacitor is to constitute across dielectric in the middle of two parallel pole plates, can power storage with release energy.Coupling capacitor has logical effect of handing over resistance straight (promptly exchange and can pass through, direct current is blocked), can block the electric current between 2, allows data to pass through smoothly simultaneously.As long as frequency input signal is higher, the coupling capacitance capacity is bigger, and the output signal of prime can almost not be delivered to the input of back level damply.But the capacitor low frequency characteristic is poor, can not amplify to change signal slowly.
Summary of the invention
The problem that the object of the invention overcomes the not enough of above-mentioned conventional art existence and exists; A kind of level shift solution is provided; So that low-pressure section circuit and high-pressure section circuit are kept apart through insulating medium layer fully; Because the puncture voltage of insulating medium layer is far longer than the puncture voltage of silicon-based substrate, therefore the voltage transformation amplitude of this level shift can be big especially.
The technical scheme that the present invention solve the technical problem employing is; High voltage level shift circuit based on integrated capacitor; It is characterized in that, comprise oscillator unit, transmission gate unit, base amplifier unit, detection unit, comparator unit, integrated capacitor unit and loop resistance;
Digital control voltage input end connects the transmission gate unit;
The output of oscillator unit connects the transmission gate unit;
The output of transmission gate unit connects the positive terminal of integrated capacitor unit;
The positive terminal of integrated capacitor unit connects the output of transmission gate unit, and negative pole end connects a loop resistance, and is connected with the input of base amplifier unit;
Loop resistance is between the input of the cathode output end of integrated capacitor unit and base amplifier unit;
The output of base amplifier unit connects the input of detection unit, and negative pole end, the loop resistance of the input of base amplifier unit and integrated capacitor unit are connected;
The output of detection unit connects the input of comparator unit, and the input of detection unit is connected with the output of base amplifier unit;
The output of comparator unit connects final voltage output end, and the input of comparator unit is connected with the output of detection unit.
Beneficial effect of the present invention: realize level displacement circuit through the integrated capacitor unit, can realize the overall level displacement of input voltage signal, be i.e. the high level current potential of input voltage signal and the low level current potential same amplitude of displaced plate together; Through the isolation of integrated capacitor, make the whole displacement amplitude of input voltage signal can be big especially, and the overall level displacement of this voltage signal both can be the level shift toward the positive voltage direction, also can be level shift toward the negative voltage direction; Owing to do not do level shift for the relative amplitude value (high value that is input voltage signal deducts low level value) of input voltage signal; Circuit two parts of the positive terminal of integrated capacitor and negative pole end; Relative to each other the amplitude of earthy power supply is identical; Because the earth potential of positive terminal circuit part can be a current potential that magnitude of voltage differs greatly with respect to the earth potential of negative pole end circuit part, even therefore the overall level displacement amplitude of input voltage signal is very big, but the employed device of two parts circuit is identical to withstand voltage requirement; All can adopt low-voltage device to realize, avoid requirement high tension apparatus.This scheme is by the notion of carrier wave simultaneously; Make the signal of the CF that produces by oscillator; Rather than by the voltage input signal of low frequency; Carry out conversion through integrated capacitor, thereby finely solved integrated capacitor because the restriction of manufacturing process can not make the low-frequency voltage control signal of various frequencies can both carry out level shift through the shortcoming of low-frequency voltage signal.And the circuit of high voltage level shift circuit of the present invention before level shift can adopt totally digital circuit, greatly reduces the complexity of level displacement circuit.
Description of drawings
Fig. 1 is existing a kind of level displacement circuit figure.
Fig. 2 is the theory diagram of the high voltage level shift circuit based on integrated capacitor of the present invention.
Fig. 3 is the circuit diagram of oscillator unit of the present invention.
Fig. 4 is the circuit diagram of transmission gate of the present invention unit.
Fig. 5 is the circuit diagram of base amplifier of the present invention unit.
Fig. 6 is the circuit diagram of detection unit of the present invention, and wherein Fig. 6 (a) is the parallel connection type diode envelope detection circuit figure of detection unit, and Fig. 6 (b) is the tandem type diode envelope detection circuit figure of detection unit.
Fig. 7 is a comparator unit circuit diagram of the present invention.
Fig. 8 is the signal waveform conversion sketch map of the high voltage level shift circuit based on integrated capacitor of the present invention.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment the present invention is done further explanation: for the ease of writing conveniently, make following regulation below: the incoming level signal is designated as: Vin; The first power supply signal end is designated as: VCC1, and first earth terminal is designated as: VSS1; The second source signal end is designated as: VCC2, and second earth terminal is designated as: VSS2; The output signal of oscillator unit 1 is designated as: S1; The output signal of transmission gate unit 2 is designated as: S2; The negative pole end output signal of integrated capacitor unit 6 is designated as: S3; Base amplifier unit 3 output signals are designated as: S4; Detection unit 4 output signals are designated as: S5; The output of comparator unit 5 is the output of level displacement circuit, and the signal of its output is designated as: Vout.
As shown in Figure 2, in the present embodiment based on the high voltage level shift circuit of integrated capacitor, comprise oscillator unit 1, transmission gate unit 2, base amplifier unit 3,, detection unit 4, comparator unit 5, integrated capacitor unit 6, loop resistance R1;
Digital control voltage input end connects transmission gate unit 2;
The output of oscillator unit 1 connects transmission gate unit 2;
The output of transmission gate unit 2 connects the positive terminal of integrated capacitor unit 6;
The positive terminal of integrated capacitor unit 6 connects the output of transmission gate unit 2, and negative pole end connects a loop resistance R1, and is connected with the input of base amplifier unit 3;
Loop resistance R1 is between the input of the cathode output end of integrated capacitor unit 6 and base amplifier unit 3;
The output S4 of base amplifier unit 3 connects the input of detection unit 4, and negative pole end, the loop resistance R1 of the input of base amplifier unit 3 and integrated capacitor unit 6 are connected;
The output of detection unit 4 connects the input of comparator unit 5, and the input of detection unit 4 is connected with the output of base amplifier unit 3;
The output of comparator unit 5 connects final voltage output end Vout, and the input of comparator unit 5 is connected with the output of detection unit 4.
Further, the transistor that all circuit units adopt all is common withstand voltage transistor, but not high voltage transistor.
Be input to the signal of the positive terminal of integrated capacitor unit 6, be one digital voltage signal carried out the oscillator signal of carrier transformation, it has the information of digital voltage signal high-low level.
Oscillator unit 1 output signal frequency is by the decision of the characteristic frequency of integrated capacitor unit 6, and is close with the characteristic frequency of integrated capacitor unit 6.
High voltage level shift circuit of the present invention can adopt totally digital circuit at the circuit (getting circuit before being level shift) of integrated capacitor unit 6 left ends simultaneously, greatly reduces the complexity of level displacement circuit.
Down make detailed description in the face of physical circuit figure based on each unit of the high voltage level shift circuit of integrated capacitor (comprise oscillator unit 1, transmission gate unit 2, base amplifier unit 3,, detection unit 4, comparator unit 5).Though provided the physical circuit of individual unit in the present embodiment; Those of ordinary skill in the art is to be appreciated that; These unit both can adopt existing physical circuit, also can adopt following concrete structure, if oscillator unit 1, transmission gate unit 2, base amplifier unit 3, detection unit 4 and comparator unit 5 adopt prior art; Innovative point so of the present invention mainly is the combination of integrated capacitor unit 6 and existing unit; If said units adopts following physical circuit, the combination of the existing integrated capacitor of innovative point so of the present invention unit 6 and existing unit also has the protection to individual unit particular circuit configurations.
The embodiment of oscillator unit 1 is as shown in Figure 3, constitutes by three CMOS inverter N11, N12, N13, and wherein three grades of inverter series connection, and the output of the CMOS inverter N13 of the third level links to each other with the input of first order CMOS inverter N11.This oscillator is the simple ring oscillator that a kind of totally digital circuit constitutes, and exports a sine wave signal identical with the characteristic frequency fT frequency values of integrated capacitor.
The embodiment of transmission gate unit 2 is as shown in Figure 4, is made up of two metal-oxide-semiconductors.The Vin signal is the control signal of transmission gate, and the signal of M21, M22 is for the Vin signal of input with through the Vin signal behind the one-level inverter.
The annexation of transmission gate is: M21 is the PMOS pipe, and M22 is the NMOS pipe; The source of M21, M22 is leaked the two poles of the earth and is interconnected, and the grid of M22 connects the Vin signal, and the grid of M21 connects the signal behind the Vin signal process one-level inverter; The substrate earthing potential VSS1 of M21, the substrate of M22 meets high potential VCC1; The drain electrode that M21, M22 link to each other connects the S1 signal, and the source electrode that M21, M22 link to each other meets transmission gate output signal S2.
The operation principle of transmission gate: when the Vin signal is high level, all conductings of M21, M22, transmission gate is opened, and the input signal S1 of transmission gate passes to output, makes S2=S1.When the Vin signal was low level, M21, M22 ended, and transmission gate turn-offs, and input and output are isolated.
The restriction of the sine wave that oscillator produced being transmitted through the Vin signal; Obtain a frequency and the identical signal of integrated capacitor characteristic frequency value; This signal has comprised the frequency information of Vin signal; This signal is identical with the characteristic frequency value of integrated capacitor, can carry out the conversion of level through integrated capacitor undistortedly.
The embodiment of base amplifier unit 3 is as shown in Figure 5, adopts collapsible common source and common grid amplifier structure.The annexation of physical circuit is: M310, M311, M312, M313, M314 are the PMOS pipe, and M301, M302, M303, M304, M305, M306, M307, M308, M309 are the NMOS pipe.The source electrode of M312, M313, M314 meets outer power voltage VCC2, the source ground current potential VSS2 of M301, M302, M305, M306, M307.The grid of M301, M302 is connected together; M301 grid leak short circuit and receive constant-current source Iref1; The drain electrode of M302 links to each other with the source electrode of difference input to M303, M304, and the grid of M303 connects the positive input of differential input signal S3, and the grid of M304 connects the reverse input end of differential input signal S3; The grid of M312, M313, M314 links to each other, M314 grid leak short circuit and receive constant-current source Iref2; The drain electrode of M312 links to each other with the source electrode of the drain electrode of M303, M310, and the drain electrode of M313 links to each other with the source electrode of the drain electrode of M304, M311; The grid short circuit of M310, M311 and receive external bias signal Vb2; The drain electrode of M310 links to each other with the forward output of the drain electrode of M308 and S4, and the drain electrode of M311 links to each other with the negative sense output of the drain electrode of M309 and S4, and the grid of M308, M309 links to each other and receives external bias signal Vb3; The source electrode of M308 links to each other with the drain electrode of M305, and the source electrode of M309 links to each other with the drain electrode of M306; The grid of M305, M306, M307 is received together, M307 grid leak short circuit and receive constant-current source Iref3.
The embodiment of detection unit 4 is as shown in Figure 6, parallel connection type diode envelope detection circuit such as Fig. 6 (a), tandem type diode envelope detection circuit such as Fig. 6 (b).The concrete linking relationship of Fig. 6 (a) is: the top crown of capacitor C 3 connects the positive input of input signal S4, and the bottom crown of C3 links to each other with the anode of resistance R 5 with diode D1, and as the forward output of exporting signal S5; The other end of R5 links to each other with the reverse input end of the negative electrode of D1, input signal S4, and as the negative sense output of S5.The concrete linking relationship of Fig. 6 (b) is: the anode of D2 links to each other with the positive input of input signal S4, and the negative electrode of D2 links to each other with the top crown of resistance R 6, capacitor C 4, and as the forward output of exporting signal S5; The other end of R6 links to each other with the reverse input end of the bottom crown of C4, input signal S4, and as the negative sense output of S5.
The embodiment of comparator unit 5 is as shown in Figure 7, and concrete annexation is: M56, M57, M58, M59 are the PMOS pipe, and M51, M52, M53, M54, M55, M56 are the NMOS pipe.The source electrode of M56, M57, M58, M59 all meets outer power voltage VCC2, the source grounding current potential VSS2 of M51, M52, M53.The grid of M56 meets external bias signal Vb4, and drain electrode connects the grid of M51, M52, M53, and M51 grid leak short circuit is formed current-mirror structure with M52, M53, for amplifier provides tail current; The drain electrode of M52 connects the source electrode of the difference input of amplifier to M54, M55; The grid of M54 meets input signal S5, and the grid of M55 connects as fixed level Vref relatively, and the drain electrode of M54 connects the grid of M57, M58; M57 grid leak short circuit; M57, M58 constitute the active load of comparator, and the drain electrode of M58 links to each other with the grid of the drain electrode of M55 and M59, as the first order output of comparator; The drain electrode of M59 links to each other with the drain electrode of M53, and as the output of two stage comparator, the output signal is Vout.
Fig. 8 is the signal waveform conversion sketch map of the high voltage level shift circuit based on integrated capacitor of the present invention.
The operation principle of technical scheme of the present invention is described below in conjunction with Fig. 8:
Oscillator unit 1 is used for producing a sine wave signal S1 identical with the characteristic frequency fT frequency values of integrated capacitor unit 6, and generally speaking the frequency of S1 is far above the frequency of input signal (digital control voltage signal Vin); Input signal Vin is as the control signal of transmission gate unit 2, and the output signal S1 of oscillator unit 1 through the control of input signal Vin, obtains a carrier signal S2 as the input signal of transmission gate unit 2; The S2 signal frequency is identical with the S1 signal, and is promptly identical with integrated capacitor unit 6 characteristic frequency fT frequencies, so it can pass through integrated capacitor unit 6 undistortedly, obtains signal S3.The loop resistance R1 of integrated capacitor unit 6 load ends make integrated capacitor unit 6 load ends form a complete loop and operate as normal, but the signal of process may be decayed.Help detection for the envelope that makes detecting circuit is wideer, the S3 signal is amplified, obtain signal S4.The S4 signal carries out obtaining exporting signal Vout after the shaping through comparator through can the frequency characteristic detection of the input signal Vin that import being come out to obtain signal S5 behind the envelope detection circuit again.The frequency characteristic of Vout signal is identical with the input signal Vin of input.Because the ground reference of integrated capacitor unit 6 positive terminals is VSS1; The ground reference of negative pole end is VSS2; So level shift amplitude of the part of the low-voltage in the Vout waveform; Confirm by these two earthy relative current potentials, and the relative amplitude value of input voltage signal (high value that is input voltage signal deducts low level value) is not done level shift
In sum, the high voltage level shift circuit system based on integrated capacitor of the present invention is that an ability is carried out undistorted level shift to the input control voltage signal, can be advantageously applied to the Circuits System of hyperbaric environment simultaneously again.Simultaneously owing to integrated capacitor good isolation characteristic, so the isolation of hi-lo circuit is fine in this Circuits System.Therefore it can be used as basic level displacement circuit in the semiconductor integrated circuit high-voltage power electronic chip.
Above instance is merely preferred example of the present invention, and use of the present invention is not limited to this instance, and is all within spirit of the present invention and principle, any modification of being made, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. based on the high voltage level shift circuit of integrated capacitor, it is characterized in that, comprise oscillator unit, transmission gate unit, base amplifier unit, detection unit, comparator unit, integrated capacitor unit and loop resistance R;
Digital control voltage input end connects the transmission gate unit;
The output of oscillator unit connects the transmission gate unit;
The output of transmission gate unit connects the positive terminal of integrated capacitor unit;
The positive terminal of integrated capacitor unit connects the output of transmission gate unit 2, and negative pole end connects a loop resistance, and is connected with the input of base amplifier unit;
Loop resistance is between the input of the cathode output end of integrated capacitor unit and base amplifier unit;
The output of base amplifier unit connects the input of detection unit, and negative pole end, the loop resistance of the input of base amplifier unit and integrated capacitor unit are connected;
The output of detection unit connects the input of comparator unit, and the input of detection unit is connected with the output of base amplifier unit;
The output of comparator unit connects final voltage output end, and the input of comparator unit is connected with the output of detection unit.
2. the high voltage level shift circuit based on integrated capacitor according to claim 1; It is characterized in that; Said oscillator unit (1) is made up of three CMOS inverter N11, N12, N13; Wherein three grades of inverter series connection, and the output of the CMOS inverter N13 of the third level links to each other with the input of first order CMOS inverter N11.
3. the high voltage level shift circuit based on integrated capacitor according to claim 1; It is characterized in that; Transmission gate unit (2) is made up of two metal-oxide-semiconductor M21, M22; The Vin signal is the control signal of transmission gate, and the signal of two metal-oxide-semiconductor M21, M22 is for the Vin signal of input with through the Vin signal behind the one-level inverter; M21 is the PMOS pipe, and M22 is the NMOS pipe; The source of M21, M22 is leaked the two poles of the earth and is interconnected, and the grid of M22 connects the Vin signal, and the grid of M21 connects the signal behind the Vin signal process one-level inverter; The substrate earthing potential VSS1 of M21, the substrate of M22 meets high potential VCC1; The drain electrode that M21, M22 link to each other connects the S1 signal, and the source electrode that M21, M22 link to each other meets transmission gate output signal S2.
4. the high voltage level shift circuit based on integrated capacitor according to claim 1 is characterized in that, said base amplifier unit 3 adopts collapsible common source and common grid amplifier structure; The annexation of its physical circuit is: M310, M311, M312, M313, M314 are the PMOS pipe, and M301, M302, M303, M304, M305, M306, M307, M308, M309 are the NMOS pipe.The source electrode of M312, M313, M314 meets outer power voltage VCC2, the source ground current potential VSS2 of M301, M302, M305, M306, M307.The grid of M301, M302 is connected together; M301 grid leak short circuit and receive constant-current source Iref1; The drain electrode of M302 links to each other with the source electrode of difference input to M303, M304, and the grid of M303 connects the positive input of differential input signal S3, and the grid of M304 connects the reverse input end of differential input signal S3; The grid of M312, M313, M314 links to each other, M314 grid leak short circuit and receive constant-current source Iref2; The drain electrode of M312 links to each other with the source electrode of the drain electrode of M303, M310, and the drain electrode of M313 links to each other with the source electrode of the drain electrode of M304, M311; The grid short circuit of M310, M311 and receive external bias signal Vb2; The drain electrode of M310 links to each other with the forward output of the drain electrode of M308 and S4, and the drain electrode of M311 links to each other with the negative sense output of the drain electrode of M309 and S4, and the grid of M308, M309 links to each other and receives external bias signal Vb3; The source electrode of M308 links to each other with the drain electrode of M305, and the source electrode of M309 links to each other with the drain electrode of M306; The grid of M305, M306, M307 is received together, M307 grid leak short circuit and receive constant-current source Iref3.
5. the high voltage level shift circuit based on integrated capacitor according to claim 1; It is characterized in that; The concrete linking relationship of said detection unit (4) is: the top crown of capacitor C 3 connects the positive input of input signal S4; The bottom crown of C3 links to each other with the anode of resistance R 5 with diode D1, and as the forward output of exporting signal S5; The other end of R5 links to each other with the reverse input end of the negative electrode of D1, input signal S4, and as the negative sense output of S5.
6. the high voltage level shift circuit based on integrated capacitor according to claim 1; It is characterized in that; The concrete linking relationship of said detection unit (4) is: the anode of D2 links to each other with the positive input of input signal S4; The negative electrode of D2 links to each other with the top crown of resistance R 6, capacitor C 4, and as the forward output of exporting signal S5; The other end of R6 links to each other with the reverse input end of the bottom crown of C4, input signal S4, and as the negative sense output of S5.
7. the high voltage level shift circuit based on integrated capacitor according to claim 1; It is characterized in that; The concrete annexation of said comparator unit (5) is: M56, M57, M58, M59 are the PMOS pipe, and M51, M52, M53, M54, M55, M56 are the NMOS pipe; The source electrode of M56, M57, M58, M59 all meets outer power voltage VCC2, the source grounding current potential VSS2 of M51, M52, M53; The grid of M56 meets external bias signal Vb4, and drain electrode connects the grid of M51, M52, M53, and M51 grid leak short circuit is formed current-mirror structure with M52, M53, for amplifier provides tail current; The drain electrode of M52 connects the source electrode of the difference input of amplifier to M54, M55; The grid of M54 meets input signal S5, and the grid of M55 connects as fixed level Vref relatively, and the drain electrode of M54 connects the grid of M57, M58; M57 grid leak short circuit; M57, M58 constitute the active load of comparator, and the drain electrode of M58 links to each other with the grid of the drain electrode of M55 and M59, as the first order output of comparator; The drain electrode of M59 links to each other with the drain electrode of M53, and as the output of two stage comparator, the output signal is Vout.
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| CN2011102978015A CN102394627A (en) | 2011-09-28 | 2011-09-28 | High voltage level shift circuit based on integrated capacitor |
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| CN104104381A (en) * | 2013-04-03 | 2014-10-15 | Nxp股份有限公司 | Capacitive level shifter devices, methods and systems |
| CN104811180A (en) * | 2014-01-28 | 2015-07-29 | 美国博通公司 | Low-power level-shift circuit for data-dependent signals |
| CN107703468A (en) * | 2017-10-18 | 2018-02-16 | 厦门大学 | The drive circuit of NMR gradient power amplifier |
| CN111273148A (en) * | 2018-12-04 | 2020-06-12 | 意法半导体股份有限公司 | Detection circuit, corresponding device and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104104381A (en) * | 2013-04-03 | 2014-10-15 | Nxp股份有限公司 | Capacitive level shifter devices, methods and systems |
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| CN107703468B (en) * | 2017-10-18 | 2023-12-01 | 厦门大学 | Driving circuit of gradient power amplifier of nuclear magnetic resonance apparatus |
| CN111273148A (en) * | 2018-12-04 | 2020-06-12 | 意法半导体股份有限公司 | Detection circuit, corresponding device and method |
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Application publication date: 20120328 |