CN102386122A - 采用硬掩膜形成隔离沟槽的方法 - Google Patents
采用硬掩膜形成隔离沟槽的方法 Download PDFInfo
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- CN102386122A CN102386122A CN2011103421494A CN201110342149A CN102386122A CN 102386122 A CN102386122 A CN 102386122A CN 2011103421494 A CN2011103421494 A CN 2011103421494A CN 201110342149 A CN201110342149 A CN 201110342149A CN 102386122 A CN102386122 A CN 102386122A
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CN102386122B CN102386122B (zh) | 2017-06-09 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102751186A (zh) * | 2012-07-26 | 2012-10-24 | 上海宏力半导体制造有限公司 | 沟槽的制作方法 |
CN113270434A (zh) * | 2021-03-12 | 2021-08-17 | 华虹半导体(无锡)有限公司 | Cis器件的隔离结构制作方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1212455A (zh) * | 1997-09-25 | 1999-03-31 | 西门子公司 | 瓶状槽的形成 |
US20020123206A1 (en) * | 2001-03-05 | 2002-09-05 | Hong Soo-Jin | Method of forming an insulating layer in a trench isolation type semiconductor device |
US20030207585A1 (en) * | 2002-05-02 | 2003-11-06 | Applied Materials, Inc. | Method of etching silicon nitride spacers with high selectivity relative to oxide in a high density plasma chamber |
US20050142734A1 (en) * | 2003-12-30 | 2005-06-30 | Shin Moon J. | Isolation methods in semiconductor devices |
CN101026098A (zh) * | 2006-02-22 | 2007-08-29 | 南亚科技股份有限公司 | 具有沟槽式栅极的半导体装置及其制造方法 |
CN101051610A (zh) * | 2006-04-03 | 2007-10-10 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制造方法 |
CN101064250A (zh) * | 2006-04-28 | 2007-10-31 | 海力士半导体有限公司 | 半导体器件中凹陷通道的制造方法 |
CN101330035A (zh) * | 2007-06-18 | 2008-12-24 | 中芯国际集成电路制造(上海)有限公司 | 浅沟槽隔离结构及其制造方法 |
CN101599419A (zh) * | 2008-06-03 | 2009-12-09 | 中芯国际集成电路制造(北京)有限公司 | 沟槽的形成方法 |
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- 2011-11-02 CN CN201110342149.4A patent/CN102386122B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1212455A (zh) * | 1997-09-25 | 1999-03-31 | 西门子公司 | 瓶状槽的形成 |
US20020123206A1 (en) * | 2001-03-05 | 2002-09-05 | Hong Soo-Jin | Method of forming an insulating layer in a trench isolation type semiconductor device |
US20030207585A1 (en) * | 2002-05-02 | 2003-11-06 | Applied Materials, Inc. | Method of etching silicon nitride spacers with high selectivity relative to oxide in a high density plasma chamber |
US20050142734A1 (en) * | 2003-12-30 | 2005-06-30 | Shin Moon J. | Isolation methods in semiconductor devices |
CN101026098A (zh) * | 2006-02-22 | 2007-08-29 | 南亚科技股份有限公司 | 具有沟槽式栅极的半导体装置及其制造方法 |
CN101051610A (zh) * | 2006-04-03 | 2007-10-10 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制造方法 |
CN101064250A (zh) * | 2006-04-28 | 2007-10-31 | 海力士半导体有限公司 | 半导体器件中凹陷通道的制造方法 |
CN101330035A (zh) * | 2007-06-18 | 2008-12-24 | 中芯国际集成电路制造(上海)有限公司 | 浅沟槽隔离结构及其制造方法 |
CN101599419A (zh) * | 2008-06-03 | 2009-12-09 | 中芯国际集成电路制造(北京)有限公司 | 沟槽的形成方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102751186A (zh) * | 2012-07-26 | 2012-10-24 | 上海宏力半导体制造有限公司 | 沟槽的制作方法 |
CN113270434A (zh) * | 2021-03-12 | 2021-08-17 | 华虹半导体(无锡)有限公司 | Cis器件的隔离结构制作方法 |
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CN102386122B (zh) | 2017-06-09 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140425 |
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Effective date of registration: 20140425 Address after: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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