TW200744231A - Epitaxy structure and fabrication method thereof - Google Patents

Epitaxy structure and fabrication method thereof

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Publication number
TW200744231A
TW200744231A TW095118829A TW95118829A TW200744231A TW 200744231 A TW200744231 A TW 200744231A TW 095118829 A TW095118829 A TW 095118829A TW 95118829 A TW95118829 A TW 95118829A TW 200744231 A TW200744231 A TW 200744231A
Authority
TW
Taiwan
Prior art keywords
fabrication method
epitaxy structure
nanometer
epitaxy
growth
Prior art date
Application number
TW095118829A
Other languages
Chinese (zh)
Other versions
TWI297959B (en
Inventor
rui-hua Hong
dong-xing Wu
Original Assignee
Univ Nat Chunghsing
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nat Chunghsing filed Critical Univ Nat Chunghsing
Priority to TW095118829A priority Critical patent/TW200744231A/en
Publication of TW200744231A publication Critical patent/TW200744231A/en
Application granted granted Critical
Publication of TWI297959B publication Critical patent/TWI297959B/zh

Links

Abstract

The present invention proposes an epitaxy structure and fabrication method thereof, wherein the dry-etching technologies such as inductively-Coupled Plasma (ICP), etc. are applied to etch vertically and precisely the epitaxial layer on the substrate, thereby obtaining the nanometer pillars with nanometer dimensions and pitches. Homo epitaxy growth is performed on the nano-pillar. By controlling the lateral and longitudinal growth speeds, a secondary expitaxial layer without defect can be obtained, and the yield rate of fabricating the following devices can be effectively increased.
TW095118829A 2006-05-26 2006-05-26 Epitaxy structure and fabrication method thereof TW200744231A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW095118829A TW200744231A (en) 2006-05-26 2006-05-26 Epitaxy structure and fabrication method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW095118829A TW200744231A (en) 2006-05-26 2006-05-26 Epitaxy structure and fabrication method thereof

Publications (2)

Publication Number Publication Date
TW200744231A true TW200744231A (en) 2007-12-01
TWI297959B TWI297959B (en) 2008-06-11

Family

ID=45069254

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095118829A TW200744231A (en) 2006-05-26 2006-05-26 Epitaxy structure and fabrication method thereof

Country Status (1)

Country Link
TW (1) TW200744231A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI457271B (en) * 2011-03-29 2014-10-21 Hon Hai Prec Ind Co Ltd Method for making semiconductor epitaxial structure
US9219193B2 (en) 2011-01-12 2015-12-22 Tsinghua University Method for making epitaxial structure
TWI583787B (en) * 2013-08-16 2017-05-21 京華堂實業股份有限公司 Composition capable of reducing alcoholic fatty liver

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI392116B (en) * 2008-08-05 2013-04-01 Univ Nat Cheng Kung Light emitting diode having a nanopore array and a method for manufacturing the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9219193B2 (en) 2011-01-12 2015-12-22 Tsinghua University Method for making epitaxial structure
US9559255B2 (en) 2011-01-12 2017-01-31 Tsinghua University Epitaxial structure
US9905726B2 (en) 2011-01-12 2018-02-27 Tsinghua University Semiconductor epitaxial structure
TWI457271B (en) * 2011-03-29 2014-10-21 Hon Hai Prec Ind Co Ltd Method for making semiconductor epitaxial structure
TWI583787B (en) * 2013-08-16 2017-05-21 京華堂實業股份有限公司 Composition capable of reducing alcoholic fatty liver

Also Published As

Publication number Publication date
TWI297959B (en) 2008-06-11

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