CN102376414A - Unequal-width multi-current-path inductor - Google Patents
Unequal-width multi-current-path inductor Download PDFInfo
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- CN102376414A CN102376414A CN2010102575645A CN201010257564A CN102376414A CN 102376414 A CN102376414 A CN 102376414A CN 2010102575645 A CN2010102575645 A CN 2010102575645A CN 201010257564 A CN201010257564 A CN 201010257564A CN 102376414 A CN102376414 A CN 102376414A
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Abstract
The invention discloses an unequal-width multi-current-path inductor. The inductor has a multilayer structure and comprises an upper layer metal coil, a lower layer metal coil, wherein patterns of the upper layer metal coil and the lower layer metal coil are overlapped, and the thicknesses of the upper layer metal coil and the lower layer metal coil are equal; the metal coils are provided with inductor ports; the inductor is spirally wound to the innermost end on the first layer metal coil from a first inductor port, and then is connected to the other layer of the metal coil through an interlayer through hole; and the other layer of the metal coil is spirally wound to the outermost end, and the upper layer metal coil and the lower layer metal coil are connected with each other through the interlayer through hole. When the unequal-width multi-current-path inductor is at a high frequency, a current path positioned on the inner circle is more seriously influenced by a neighborhood effect; for the unequal-width multi-current-path inductor, the metal width on the outer circle is set to be wider than that on the inner circle, and the inductances of an equivalent metal width and an equal-width current path are consistent, so on the premise of not increasing low-frequency resistance of the inductor, the parasitic resistance of the inductor at the high frequency is further reduced, and then a higher quality factor is acquired.
Description
Technical field
The present invention relates to microelectronic, specifically is a kind of multiple current path inductance.
Background technology
At present, in integrated circuit, comprised a large amount of passive devices, on-chip inductor is exactly wherein crucial a kind of, and on-chip inductor is one of critical elements of RF CMOS/BiCMOS integrated circuit.In common wireless product, inductance element has very significant effects to total radio-frequency performance.Therefore design and the analysis to these inductance elements also obtained extensive studies.Inductance is as the core component of radio circuit, and it can have influence on the overall performance of entire circuit usually.At present, what often use is laminated inductance, and it is widely used in voltage controlled oscillator, in the RF circuit modules such as low noise amplifier.Laminated inductance has high quality factor Q value, the advantage of the chip area of high resonance frequency and minimum.
The inductance quality factor q value of inductance component recited above is to weigh the major parameter of inductance component.It is meant when inductor is worked under the alternating voltage of a certain frequency, the ratio of the induction reactance that is appeared loss resistance equivalent with it.The Q value of inductor is high more, and its loss is more little, and efficient is high more.
Its computing formula is:
Q representes quality factor, and w representes frequency, and L representes the inductance value under a certain frequency, and Rs representes the resistance value under a certain frequency.
Traditional wide multiple current path inductance has than higher quality factor owing to effectively reduce the influence of skin effect under the high frequency.But; Like Fig. 1, shown in Figure 2; The width of traditional wide multiple current path each bar branch road of inductance equates; But receive the influence of proximity effect even more serious owing to be in the current path of inner ring under the high frequency, the resistance of resistance ratio outer ring current path wants high on the inner ring current path under high frequency, has limited the quality factor of inductance.
Summary of the invention
Technical problem to be solved by this invention provides a kind of not wide multiple current path inductance, and it can be at same area, do not increase under the condition of inductance low-frequency resistance value, further reduces inductance high parasitic resistance, and improves inductance quality factor q value.
For solving above technical problem, the invention provides a kind of not wide multiple current path inductance; It is a sandwich construction, comprising: the upper/lower layer metallic coil, and the upper/lower layer metallic coil pattern overlaps, and the thickness of upper/lower layer metallic coil equates; The inductance port is arranged on the said wire coil; Said inductance is since an inductance port, and helical is around to inner end on the ground floor wire coil, and the back is connected to another layer wire coil through interlayer via; Helical is around causing outermost end again for another layer wire coil, and said upper/lower layer metallic coil is through the interlayer via interconnection.
Beneficial effect of the present invention is: the current path that is in inner ring under the high frequency receives the influence of proximity effect even more serious; The metal width that the present invention will be in the outer ring is made as wideer than the metal of inner ring; The metal width of equivalence is consistent with wide current path inductance; Under the prerequisite that does not increase the inductance low-frequency resistance, further reduced the dead resistance of inductance under the high frequency, thereby obtained higher quality factor.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is done further explain.
Fig. 1 is the vertical view of existing laminated inductance upper strata wire coil;
Fig. 2 is the vertical view of existing laminated inductance lower metal coil;
Fig. 3 is the vertical view of the said laminated inductance of embodiment of the invention upper strata wire coil;
Fig. 4 is the vertical view of the said laminated inductance lower metal of embodiment of the invention coil;
Fig. 5 is the resolution chart of radio frequency passive device.
Embodiment
Not wide multiple current of the present invention path inductance; It comprises: the wire coil in multiple current path; The inductance port is arranged on the said wire coil; The metal width that is in the outer ring is made as wideer than the metal of inner ring.
In more detail, not wide multiple current path inductance planar structure of the present invention (is example with double layer of metal, 4 circle octangle inductance) is seen Fig. 3, Fig. 4.Can find out that from Fig. 3, Fig. 4 the described not wide multiple current of present embodiment path inductance is divided into two-layer up and down, each layer all has an inductance port, and each inductance port connects 4 strip metal coils.4 strip metal coil from-inner-to-outers broaden successively.Receive the influence of proximity effect even more serious because be in the current path of inner ring under the high frequency; The metal width that the present invention will be in the outer ring is made as wideer than the metal of inner ring; The metal width of equivalence is consistent with wide current path inductance; Under the prerequisite that does not increase the inductance low-frequency resistance, further reduced the dead resistance of inductance under the high frequency, thereby obtained higher quality factor.
Can find out that from Fig. 3, Fig. 4 the width of double layer of metal equates and the position coincidence up and down.From two width of cloth figure, can find out; Inductance of the present invention is since an end; On the layer of metal coil clockwise helical around to inner end; The back is connected to down layer of metal through interlayer via, and helical is around causing outermost end clockwise again for lower metal, and centre cap is drawn through another layer metal from 1/2 (junction in the middle of the double layer of metal) of track lengths.
For example, be that example is done emulation with double layer of metal, 4 circle octangle inductance, simulation result is as shown in Figure 5.Simulation result shows that structure inductance quality factor q value according to the invention has clear improvement.
Upper/lower layer metallic width shown in Fig. 3, Fig. 4 is consistent; This structure can make full use of the mutual inductance (each circle metal all has corresponding metal on another layer metal level) between the interlayer metal; Improve the quality factor q of inductance; In the actual fabrication process, also can adopt the not wide technology of metal up and down.
Said inductance port can be two.Said two inductance ports can lay respectively on the upper/lower layer metallic coil.Said wire coil can be 4 circles, also can for enclosing arbitrarily more.Said wire coil can be octangle, also circular or other shape.Said wire coil can be clockwise spiral.
Structure of the present invention is not limited to two-layer inductance, and other multilayer inductors also are suitable for.It is top-level metallic that the present invention is preferably applied in the upper strata wire coil, and the lower metal coil is the situation of time top-level metallic, but other metal levels of the inductance of other multilayers also can be suitable for.
The present invention is not limited to the execution mode that preceding text are discussed.More than the description of embodiment is intended in order to describe and explain the technical scheme that the present invention relates to.Based on the conspicuous conversion of the present invention enlightenment or substitute and also should be considered to fall into protection scope of the present invention.Above embodiment is used for disclosing the best structure of implementing of the present invention, so that those of ordinary skill in the art can use numerous embodiments of the present invention and multiple alternative reaches the object of the invention.
Claims (8)
1. not wide multiple current path inductance; It is characterized in that, comprising:
The wire coil in multiple current path;
The inductance port is arranged on the said wire coil;
The metal width that is in the outer ring is made as wideer than the metal of inner ring.
2. not wide multiple current as claimed in claim 1 path inductance is characterized in that the wire coil in said multiple current path broadens from inside to outside successively.
3. not wide multiple current as claimed in claim 2 path inductance is characterized in that,
Said wire coil is two-layer up and down, and the upper/lower layer metallic coil pattern overlaps;
Said inductance is since an inductance port, and helical is around to inner end on the ground floor wire coil, and the back is connected to another layer wire coil through interlayer via;
Helical is around causing outermost end again for another layer wire coil, and said upper/lower layer metallic coil is through the interlayer via interconnection.
4. not wide multiple current as claimed in claim 3 path inductance is characterized in that, the live width of said upper/lower layer metallic coil equates.
5. not wide multiple current as claimed in claim 4 path inductance is characterized in that said inductance port is two, and said two inductance ports lay respectively on the upper/lower layer metallic coil.
6. not wide multiple current as claimed in claim 5 path inductance is characterized in that said current path is two or many.
7. not wide multiple current as claimed in claim 6 path inductance is characterized in that said wire coil is an octangle, square or circular.
8. not wide multiple current as claimed in claim 7 path inductance is characterized in that said wire coil is clockwise or counterclockwise spiral.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102575645A CN102376414A (en) | 2010-08-19 | 2010-08-19 | Unequal-width multi-current-path inductor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010102575645A CN102376414A (en) | 2010-08-19 | 2010-08-19 | Unequal-width multi-current-path inductor |
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| CN102376414A true CN102376414A (en) | 2012-03-14 |
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| CN2010102575645A Pending CN102376414A (en) | 2010-08-19 | 2010-08-19 | Unequal-width multi-current-path inductor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10153078B2 (en) | 2015-10-06 | 2018-12-11 | Realtek Semiconductor Corporation | Integrated inductor structure and integrated transformer structure |
| TWI783763B (en) * | 2021-10-29 | 2022-11-11 | 瑞昱半導體股份有限公司 | Inductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1224062C (en) * | 2001-08-09 | 2005-10-19 | 皇家飞利浦电子股份有限公司 | Planar inductive component and planar transformer |
| CN2768205Y (en) * | 2004-12-23 | 2006-03-29 | 华东师范大学 | Plane helix inductance with metal wire width and metal distance gradual change |
| CN1988069A (en) * | 2006-11-24 | 2007-06-27 | 南京航空航天大学 | Process for producing inductive coil by printed circuit board |
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2010
- 2010-08-19 CN CN2010102575645A patent/CN102376414A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1224062C (en) * | 2001-08-09 | 2005-10-19 | 皇家飞利浦电子股份有限公司 | Planar inductive component and planar transformer |
| CN2768205Y (en) * | 2004-12-23 | 2006-03-29 | 华东师范大学 | Plane helix inductance with metal wire width and metal distance gradual change |
| CN1988069A (en) * | 2006-11-24 | 2007-06-27 | 南京航空航天大学 | Process for producing inductive coil by printed circuit board |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10153078B2 (en) | 2015-10-06 | 2018-12-11 | Realtek Semiconductor Corporation | Integrated inductor structure and integrated transformer structure |
| TWI783763B (en) * | 2021-10-29 | 2022-11-11 | 瑞昱半導體股份有限公司 | Inductor device |
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Application publication date: 20120314 |