CN101719415A - Plane spiral inductor - Google Patents
Plane spiral inductor Download PDFInfo
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- CN101719415A CN101719415A CN200910247751A CN200910247751A CN101719415A CN 101719415 A CN101719415 A CN 101719415A CN 200910247751 A CN200910247751 A CN 200910247751A CN 200910247751 A CN200910247751 A CN 200910247751A CN 101719415 A CN101719415 A CN 101719415A
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Abstract
The invention discloses a plane spiral inductor; the width of a lead wire of the plane spiral inductor is gradually increased from interior to exterior, the distance between the lead wires is gradually reduced from an inner ring to an outer ring; compared with the inductor with the traditional structure, eddy effect and proximity effect of the plane spiral inductor are reduced at high frequency, the series resistance of inductor coil lead wires is reduced, so as to improve the quality factor Q value of the inductor on the premise of not changing the domain area and the size of inner diameter; a preparation process of the plane spiral inductor is compatible to the conventional CMOS process, and the performance of an important functional unit at the CMOS radio-frequency front end can be improved.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of planar spiral inductor.
Background technology
In CMOS radio frequency integrated circuit (RFIC) development, the most urgent and the most difficult is to develop high performance new unit and new element circuit, and they are the bases of realizing single chip CMOS integrated RF front end.Planar spiral inductor is as the key element in the radio frequency integrated circuit, is the element of the most difficult design and grasp in the circuit, and its performance parameter directly affects the performance of radio frequency integrated circuit.On-chip inductor can be realized the integrated problem of inductance in the radio frequency integrated circuit, thereby helps the SOC (system on a chip) of radio frequency integrated circuit to realize.
Planar spiral inductor forms by metallic film coiling on silicon substrate mostly on the sheet, with respect to traditional wire-wound inductance, on the sheet planar spiral inductor have cost low, be easy to the advantage integrated, that noise is little and low in energy consumption, the more important thing is can with CMOS process compatible now.Along with mobile communication develops to microminiaturized, low power consumption, also more and more in recent years to making with high-quality research of going up passive device of CMOS process compatible.Yet, directly be prepared in the planar spiral inductor on the low-resistance silicon substrate, have the parasitic capacitance, dead resistance of tangible substrate parasitic capacitance, dead resistance, metallic conductor and because the dead resistance that effects such as eddy current loss form etc., these all will influence the performance of inductance.
In integrated circuit, the main loss of radio frequency passive device such as planar spiral inductor has two kinds on the sheet: substrate loss and metallic conductor loss.
Be directed to the reduction substrate loss, proposed several solutions: 1. use ion to inject or the semi-insulating silicon substrate of other choice of technology realization; 2. between inductance coil and silicon substrate, insert the diagram form ground shield, or in silicon substrate, form the PN junction isolation to reduce substrate loss.
About the metallic conductor loss, it is made up of ohmic loss and magnetic induction loss, and the former is caused that by conduction current the latter is caused by eddy current.When conduction current flow through metallic conductor, the ohmic loss that it produced was relevant with the resistance of metallic conductor, and this resistance is directly proportional with the resistivity and the total length of plain conductor, was inversely proportional to the width and the thickness of plain conductor.Therefore, in order to reduce ohmic loss, generally select the metallic conductor of low-resistivity for use and suitably increase metal layer thickness, and do not change the geometry of inductance, because the plain conductor total length and the inductance coil number of turns are closely related, and the inside and outside footpath size of plain conductor width and inductance coil is closely related, and these all will influence other parameter of inductance.
Usually people adopt the identical design philosophy of inside and outside footpath metallic conductor live width to make planar spiral inductor, and we are referred to as traditional fixed structure inductance.But in this inductance, the magnetic flux density by inner ring plain conductor is maximum, and then the magnetic induction loss is also maximum.People's method of having proposed to optimize the inductance domain improved induction quality factor Q afterwards, for example adopt coil metal lead live width from outer radial internal diameter gradual change successively and coil-span still is the single grading structure of fixed value, limit induction quality factor Q but this structure still is subjected to the influence of eddy current effect and improve.
See also Fig. 1, it is depicted as the eddy current effect schematic diagram of inductance.Represent planar spiral inductor three coil metal leads from inside to outside from top to bottom, I
CoilBe the alternating current that flows through in the inductance coil, by Faraday's law as can be known, this electric current can produce an alternating magnetic field B
CoilThis magnetic field is the closer to the center of inductance coil, and density is big more, if the coil at inductance center is very close, the magnetic flux of induced field will have a big chunk to pass centering coil.Alternating magnetic field B
CoilPortion produces eddy current I in coil
Eddy, and this alternating current will produce an alternating magnetic field B
EddyBy Lenz's law as can be known, in order to hinder alternating magnetic field B
CoilVariation, alternating magnetic field B
EddyDirection will with alternating magnetic field B
CoinOn the contrary, therefore, total magnetic intensity B
Coil+ B
EddyDiminish.And, at the lead of coil near inboard one side, I
EddyWith I
CoilDirection is identical, and it is big that current density becomes; At the lead of coil near the one side in the outside, I
EddyWith I
CoilDirection is opposite, and current density diminishes, and will cause current density inhomogeneous, has increased the series resistance R of plain conductor
sThis shows that eddy current effect will cause the magnetic flux density at inductance center to strengthen greatly, and make the current density in the plain conductor inhomogeneous, thereby increased the series resistance R of plain conductor
s, reduced the quality factor of inductance.
On the other hand, because the electric current of adjacent metal lead flows, the alternating magnetic field of generation can pass through this plain conductor.According to Lenz's law, this plain conductor can produce the variation that eddy current suppresses magnetic field, and this phenomenon is called approach effect.Approach effect causes owing to eddy current in itself.From as can be known to the analysis of eddy current effect, magnetic field between the two adjacent plain conductors will change the CURRENT DISTRIBUTION of plain conductor, when two adjacent plain conductor spacings more hour, magnetic field interaction between them is strong more, thereby cause the current density in the plain conductor more inhomogeneous, make plain conductor series resistance R
sFurther become big, influence the quality factor q value of inductance; In addition, under the situation of other parameter constant of inductance, if increase spacing between two plain conductors, the total length of plain conductor will increase, and internal diameter will reduce, and these also all will make plain conductor series resistance R
sIncrease, the quality factor q value of inductance descends.
Therefore existing planar spiral inductor structure can't well solve the problem of ohmic loss and magnetic induction loss in the metallic conductor loss.
Summary of the invention
The present invention is intended to solve planar spiral inductor structure of the prior art owing to there is the metallic conductor loss, and then causes the technical problem of the quality factor q reduction of inductance.
In view of this, the invention provides a kind of planar spiral inductor, it is characterized in that, the width of the lead of described planar spiral inductor increases from inside to outside gradually, and the spacing between the described lead is reduced to the outer ring gradually by inner ring.
Further, the described width value w that respectively encloses lead
iDistance values s between (wherein n is a number of inductor for i=1,2...n, and definition i=1 is an outmost turns) and the corresponding adjacent lead with it
i(i=1,2...n-1) sum S
Wsi=w
i+ s
iBe certain value S
Ws, this definite value S
WsWith conductor width value w
iSatisfy: 1.1 * w
i≤ S
Ws≤ 11 * w
i
Further, the described width value w that respectively encloses lead
iAnd the distance values s between the adjacent wires corresponding with it
iRatio R
Wsi=w
i/ s
iIncreased gradually to the outer ring by inner ring, this ratio satisfies 0.1≤R
Wsi≤ 10.The width value w of outmost turns lead wherein
1And the distance values s between the adjacent wires
1Ratio R
Ws1Satisfy 4≤R
Ws1≤ 10, the width value w of inner ring lead
N-1And the distance values s between the adjacent wires
N-1Ratio R
Wsn-1Satisfy 0.1≤R
Wsn-1≤ 5.
Further, the width value scope of described lead is 0.032～30 micron.
Further, the scope of the distance values between the adjacent described lead is 0.045～12 micron.
Further, the external diameter scope of described planar spiral inductor is 0.1～500 micron.
Planar spiral inductor provided by the invention is compared with the traditional structure inductance, the influence of eddy current effect and approach effect reduces during its high frequency, the series resistance of inductance coil lead reduces, thereby has improved the quality factor q value of inductance under the prerequisite that does not change chip area and internal diameter size; And its preparation technology and conventional CMOS process compatible can improve the performance of the critical function unit of CMOS radio-frequency front-end.
Description of drawings
Figure 1 shows that the eddy current effect schematic diagram of planar spiral inductor;
Figure 2 shows that the structure vertical view of the planar spiral inductor that one embodiment of the invention provides;
Figure 3 shows that planar spiral inductor and conventional fixed structure inductance performance comparison diagram that one embodiment of the invention provides.
Embodiment
For technical characterictic of the present invention is become apparent, below in conjunction with accompanying drawing, provide specific embodiment, the present invention will be further described.
See also Fig. 2, it is depicted as the structure vertical view of the planar spiral inductor that one embodiment of the invention provides.
This planar spiral inductor, the width w of the lead of its inductance coil
iIncrease gradually from inside to outside, and the distance s between the lead of described inductance coil
iReduce gradually to the outer ring by inner ring.Spacing sum between the width of described lead and the corresponding adjacent lead with it is certain value S
WsThe ratio R of the spacing between the width of described lead and the corresponding adjacent lead with it
WsiIncrease gradually to the outer ring by inner ring.
In the present embodiment, each encloses the width value w of lead
iDistance values s between (wherein n is a number of inductor for i=1,2...n, and definition i=1 is an outmost turns) and the corresponding adjacent lead with it
i(i=1,2...n-1) sum S
Wsi=w
i+ s
iBe certain value S
Ws, this definite value S
WsWith conductor width value w
iSatisfy: 1.1 * w
i≤ S
Ws≤ 11 * w
iAnd respectively enclose the width value w of lead
iAnd the distance values s between the adjacent wires corresponding with it
iRatio R
Wsi=w
i/ s
iIncreased gradually to the outer ring by inner ring, this ratio satisfies 0.1≤R
Wsi≤ 10.The width value w of outmost turns lead wherein
1And the distance values s between the adjacent wires
1Ratio R
Ws1Satisfy 4≤R
Ws1≤ 10, the width value w of inner ring lead
N-1And the distance values s between the adjacent wires
N-1Ratio R
Wsn-1Satisfy 0.1≤R
Wsn-1≤ 5.
In the present embodiment, the width value w of described inductance coil lead
iScope is 0.032～30 micron.Distance values s between the described adjacent wires
iScope be 0.045～12 micron.The outer diameter D of planar spiral inductor
OutScope be 0.1～500 micron.
At first, adopt the width w of the metal inductance winding wire of gradual change in the embodiment of the invention
iTo the inner ring lead of the bigger inductance coil of magnetic flux density, adopt width w
iNarrower plain conductor; Less to magnetic flux density, based on the outer figure lead of the inductance coil of ohmic loss, adopt width w
iThe plain conductor of broad, and from the inner ring to the outer ring, the width w of inductance coil lead
iIncrease successively, reach the purpose that reduces the metallic conductor loss.
Secondly, the analysis from the above-mentioned background technology distributes as can be known, the spiral inductance coil is the closer to hub of a spool, the magnetic induction loss that it bears is also big more, the eddy current loss maximum of the inductance coil of promptly inner ring.And the inductance operating frequency is high more, and approach effect is just serious more.Therefore, in order to reduce above-mentioned influence, taked the distance s of the spiral inductance winding wire of gradual change in the present embodiment
i, big to magnetic flux density, be subjected to that spacing influences bigger inner ring lead between the inductance coil lead, adopt the distance s of broad
iLess to magnetic flux density, be subjected to that spacing influences less outer ring lead between the inductance coil lead, adopt narrower distance s
i, and from inside to outside, the distance s between the inductance coil lead
iReduce successively, reach the purpose that reduces the metallic conductor loss.At the bigger inner ring lead of magnetic field intensity, bigger spacing can weaken ghost effect simultaneously, and the more weak outer ring lead in magnetic field, less spacing then can the compensating inductance value.
In an embodiment of the present invention, the width w of described inductance coil lead
iAnd the distance s between the adjacent lead corresponding with it
iSum is certain value S
Ws, and respectively enclose the width w of inductance coil lead
iWith the distance s between the corresponding adjacent lead
iRatio R
WsiThe rule gradual change that from the outer ring to the inner ring, reduces gradually, thus the quality factor q value of inductance under the prerequisite that does not change chip area and internal diameter size, improved.
The planar spiral inductor that provides for the better explanation embodiment of the invention sees also table 1 compared to traditional fixed structure more performance that inductance has.Q wherein
1, Q
4And Q
7Be traditional fixed structure inductance, Q
2, Q
3, Q
5, Q
6, Q
8, Q
9The planar spiral inductor that provides for the embodiment of the invention.
Table 1
D
out S
wsi w
i s
i
L
n Q
i R
wsi
Q
max
(μm) (μm) (μm) (μm) (nH)
The
Q
1 1 10 10 10.6 10.4
350 20 4.51
Q
2 4～0.5 16～6.5 4～13.5 11.2 9.8
Q
3 5～1 16.7～10 3.3～20 12.9 9.9
Q
4 1 15 15 10.5 16.2
The
500×
Q
5 4～0.33 24～7.5 6～22.5 11.0 15.9
2
30 5.5
500
Group
Q
6 5～0.5 25～10 5～20 11.7 15.3
Q
7 1 20 20 11.7 5.0
The
400×
Q
8 4～1 32～20 8～20 13.4 4.9
3
40 3.5
400
Group
Q
9 5～0.33 33～10 7～30 13.0 5.1
Table 1 is depicted as planar spiral inductor and the conventional fixed structure inductance performance comparison sheet that three groups of embodiment of the invention provide.The parameter meaning is as follows in the table: D
OutRepresent the external diameter of inductance; S
WsThe width value of representing the inductance coil lead with and its corresponding adjacent lead between the distance values sum; R
WsiThe width of the inductance coil lead of representative from the outer ring to the inner ring with and its corresponding adjacent lead between the ratio of spacing; w
iRepresent the conductor width value of inductance coil; s
iRepresent the distance values between the inductance coil lead; Q
MaxRepresent the quality factor peak value of inductance; L represents inductance value.
With first group be example, traditional fixed structure inductance Q
1Outer diameter D
OutBe 350 μ m, the conductor width value w of inductance coil
iBe 10 μ m, the distance values s between the circle lead
iBe 10 μ m, the width value of inductance coil lead with and its corresponding adjacent lead between distance values sum S
WsBe 20 μ m, the width of inductance coil lead with and its corresponding adjacent lead between the ratio R of spacing
WsiBeing 1, is 10.4nH through measuring its inductance value L, the quality factor peak value Q of its inductance
MaxBe 10.6.
With traditional fixed structure inductance Q
1The planar spiral inductor Q that the contrast embodiment of the invention provides
2Outer diameter D
OutBe all 350 μ m, the width value w of inductance coil lead
iWith and its corresponding adjacent lead between distance values s
iSum S
WsAlso be all definite value 20 μ m, the conductor width value w of inductance coil
iIncreased gradually to the outer ring by inner ring, its scope is for example distinguished value 6.5 μ m, 8.5 μ m, 11 μ m, 14 μ m, 16 μ m by inner ring at 6.5～16 μ m to the outer ring; Distance values s between the circle lead
iReduced gradually to the outer ring by inner ring, scope is 13.5～4 μ m, for example distinguishes value 13.5 μ m, 10.5 μ m, 7 μ m, 4 μ m to the outer ring by inner ring; The width w of inductance coil lead
iWith and its corresponding adjacent lead between distance s
iRatio R
WsiIncreased gradually to the outer ring by inner ring, its scope is 0.5～4, and according to calculating for example with above-mentioned, it is respectively 0.6,1, and 2,4; Through measuring its inductance value of acquisition L is 9.8nH; The quality factor peak value Q of its inductance
MaxBe 11.2, be significantly improved compared to conventional fixed structure inductance.Same planar spiral inductor Q in this group
2Quality factor also be significantly improved compared to conventional fixed structure inductance.
As seen from the above table, the width of the winding wire of the planar spiral inductor that the embodiment of the invention provides increases from inside to outside gradually, and the spacing between the described inductance coil lead reduces from inside to outside gradually, the ratio R of the spacing between the width of its inductance coil lead from the outer ring to the inner ring and the adjacent wires corresponding with it
WsiReduce gradually, and the peak value of the quality factor q value of corresponding inductance has tangible rising than the inductance of prior art, the performance of the planar spiral inductor that the embodiment of the invention provides is greatly improved.
For being illustrated more clearly in, please in conjunction with referring to Fig. 3, it is depicted as the planar spiral inductor Q that one embodiment of the invention provides
9With conventional fixed structure inductance Q
7The performance comparison diagram.According to figure and the table as can be known, compared to conventional fixed structure inductance, the quality factor q value of the planar spiral inductor that the embodiment of the invention provides all increases significantly, thereby has more performance.
In sum, the planar spiral inductor that the embodiment of the invention provides is compared with the traditional structure inductance, and the influence of eddy current effect and approach effect reduces the series resistance R of inductance coil during its high frequency
sReduce, thereby under the prerequisite that does not change chip area and internal diameter size, improved the quality factor q value of inductance; And its preparation technology and conventional CMOS process compatible can improve the performance of the critical function unit of CMOS radio-frequency front-end.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (6)
1. a planar spiral inductor is characterized in that, the conductor width that respectively encloses of described planar spiral inductor is increased to the outer ring gradually by inner ring, and the spacing of respectively enclosing between the described lead is reduced to the outer ring gradually by inner ring.
2. planar spiral inductor according to claim 1 is characterized in that, the described width value w that respectively encloses lead
iDistance values s between (wherein n is a number of inductor for i=1,2...n, and definition i=1 is an outmost turns) and the corresponding adjacent lead with it
i(i=1,2...n-1) sum S
Wsi=w
i+ s
iBe certain value S
Ws, this definite value S
WsWith conductor width value w
iSatisfy:
1.1×w
i≤S
ws≤11×w
i。
3. planar spiral inductor according to claim 2 is characterized in that, the described width value w that respectively encloses lead
iAnd the distance values s between the adjacent wires corresponding with it
iRatio R
Wsi=w
i/ s
iIncreased gradually to the outer ring by inner ring, this ratio satisfies 0.1≤R
Wsi≤ 10.The width value w of outmost turns lead wherein
1And the distance values s between the adjacent wires
1Ratio R
Ws1Satisfy 4≤R
Ws1≤ 10, the width value w of inner ring lead
N-1And the distance values s between the adjacent wires
N-1Ratio R
Wsn-1Satisfy 0.1≤R
Wsn-1≤ 5.
4. planar spiral inductor according to claim 1 is characterized in that, the width value scope of described lead is 0.032～30 micron.
5. planar spiral inductor according to claim 1 is characterized in that, the scope of the distance values between the adjacent described lead is 0.045～12 micron.
6. planar spiral inductor according to claim 1 is characterized in that, the scope of the external diameter of described planar spiral inductor is 0.1～500 micron.
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|---|---|---|---|
| CN200910247751A CN101719415A (en) | 2009-12-30 | 2009-12-30 | Plane spiral inductor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910247751A CN101719415A (en) | 2009-12-30 | 2009-12-30 | Plane spiral inductor |
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|---|---|
| CN101719415A true CN101719415A (en) | 2010-06-02 |
Family
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|---|---|---|---|
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103390611A (en) * | 2012-05-08 | 2013-11-13 | 上海华虹Nec电子有限公司 | Single-ended inductor |
| CN103400820A (en) * | 2013-01-30 | 2013-11-20 | 威盛电子股份有限公司 | Semiconductor device with a plurality of semiconductor chips |
| RU2560918C2 (en) * | 2012-12-03 | 2015-08-20 | Корпорация "САМСУНГ ЭЛЕКТРОНИКС Ко., Лтд." | Q-factor increase method for flat pancake coil |
| CN105590735A (en) * | 2016-03-14 | 2016-05-18 | 饶波 | Planar transformer |
| CN106373957A (en) * | 2015-07-21 | 2017-02-01 | 三垦电气株式会社 | Semiconductor apparatus and electronic device comprising the semiconductor apparatus |
| CN109166708A (en) * | 2018-08-21 | 2019-01-08 | 武汉理工大学 | A kind of change turn-to-turn is away from planar spiral winding |
| CN110620112A (en) * | 2018-06-19 | 2019-12-27 | 旺宏电子股份有限公司 | Circuit structure and manufacturing method thereof |
| CN111446928A (en) * | 2019-01-16 | 2020-07-24 | 三星电机株式会社 | Inductor and low noise amplifier including the same |
| CN113871823A (en) * | 2021-09-24 | 2021-12-31 | 杭州泛利科技有限公司 | IPD technology-based miniaturized high-performance duplexer |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103390611A (en) * | 2012-05-08 | 2013-11-13 | 上海华虹Nec电子有限公司 | Single-ended inductor |
| CN103390611B (en) * | 2012-05-08 | 2016-11-09 | 上海华虹宏力半导体制造有限公司 | Single-ended inductor |
| RU2560918C2 (en) * | 2012-12-03 | 2015-08-20 | Корпорация "САМСУНГ ЭЛЕКТРОНИКС Ко., Лтд." | Q-factor increase method for flat pancake coil |
| US9142541B2 (en) | 2013-01-30 | 2015-09-22 | Via Technologies, Inc. | Semiconductor device having inductor |
| CN103400820B (en) * | 2013-01-30 | 2016-08-10 | 威盛电子股份有限公司 | Semiconductor device with a plurality of semiconductor chips |
| CN103400820A (en) * | 2013-01-30 | 2013-11-20 | 威盛电子股份有限公司 | Semiconductor device with a plurality of semiconductor chips |
| CN106373957A (en) * | 2015-07-21 | 2017-02-01 | 三垦电气株式会社 | Semiconductor apparatus and electronic device comprising the semiconductor apparatus |
| CN105590735A (en) * | 2016-03-14 | 2016-05-18 | 饶波 | Planar transformer |
| CN105590735B (en) * | 2016-03-14 | 2018-09-07 | 饶波 | A kind of flat surface transformer |
| CN110620112A (en) * | 2018-06-19 | 2019-12-27 | 旺宏电子股份有限公司 | Circuit structure and manufacturing method thereof |
| CN109166708A (en) * | 2018-08-21 | 2019-01-08 | 武汉理工大学 | A kind of change turn-to-turn is away from planar spiral winding |
| CN111446928A (en) * | 2019-01-16 | 2020-07-24 | 三星电机株式会社 | Inductor and low noise amplifier including the same |
| CN111446928B (en) * | 2019-01-16 | 2024-03-26 | 三星电机株式会社 | Inductor and low noise amplifier including the same |
| CN113871823A (en) * | 2021-09-24 | 2021-12-31 | 杭州泛利科技有限公司 | IPD technology-based miniaturized high-performance duplexer |
| CN113871823B (en) * | 2021-09-24 | 2022-07-08 | 杭州泛利科技有限公司 | IPD technology-based miniaturized high-performance duplexer |
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