CN102373480A - Method for cleaning wafer - Google Patents
Method for cleaning wafer Download PDFInfo
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- CN102373480A CN102373480A CN2010102632563A CN201010263256A CN102373480A CN 102373480 A CN102373480 A CN 102373480A CN 2010102632563 A CN2010102632563 A CN 2010102632563A CN 201010263256 A CN201010263256 A CN 201010263256A CN 102373480 A CN102373480 A CN 102373480A
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Abstract
The invention discloses a method for cleaning a wafer. The wafer is provided with an aluminum pad. The method comprises a step of cleaning the wafer by aqueous solution of tetramethyl ammonium hydroxide, wherein the content of tetramethyl ammonium hydroxide in the aqueous solution of tetramethyl ammonium hydroxide is in the range of 1.0 percent by weight to 9.8 percent by weight; the cleaning time is in the range of 15 seconds to 40 seconds; the cleaning step is carried out at a temperature of 15 DEG C to 30 DEG C. The method can also comprise a step of carrying out state stabilizing treatment. According to the method for cleaning the wafer with the aluminum pad, which is disclosed by the invention, the erosion defect of the aluminum pad on the wafer can be effectively reduced and the erosion is prevented from being worsened or infected to other wafers.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to a kind of method of clean wafers.
Background technology
In the manufacturing processed of unicircuit, usually need use aluminium to metallize.This is because the erosion resistance of aluminium is better and cheap, be easy to processing and be convenient to welding.Aluminium is the welding zone metal of doing commonly used in unicircuit, promptly on wafer, forms the aluminium pad, as with the electric connection point (pad) of external circuit.
Generally generate the aluminium pad, need then immediately the aluminium pad to be cleaned,,, and cause the surface of aluminium pad to produce defective because these impurity may corrode formed aluminium pad to remove the impurity that produces by etching through the etching aluminium that uses chlorine-based gas.But when cleaning, it is moist that wafer environment of living in becomes, the aluminum chloride (AlCl in the above-mentioned impurity
3) in wet environment, can react with water molecules generates hydrochloric acid and white lake (AlCl
3+ 3H
2O=Al (OH)
3+ 3HCl).Hydrochloric acid can generate aluminum chloride (6HCl+2Al=2AlCl with reactive aluminum again
3+ 3H
2), the aluminum chloride that is generated then can continue again to react with water.Wherein, white lake is alkalescence and is insoluble in water, can be attached on the aluminium pad and form spawn in wet environment.This indissoluble thing can reduce the safety of aluminium pad, thereby causes the defectives such as rosin joint of semiconducter device.Because this gel is not soluble in water, be difficult to through washing its removal.If adopt acidic solution commonly used that its cleaning and removing is removed, acidic solution also can with the aluminium generation oxidizing reaction that constitutes the aluminium pad, further increase the weight of the defective of aluminium pad.Therefore, the use of the environment of humidity and chlorine-based gas corrode the problem of defective can for the aluminium rim strip.And as implied above, a plurality of reactions that taken place in this process are Kettenreaktion, so the defective on the single wafer can heal and become serious, and can pass to other wafers in the same wafer case, thereby reduce the quality with batch wafer.
Fig. 1 is the sweep electron microscope photo of the erosion defective on the prior art aluminium pad.As shown in Figure 1, can find out and adhere to indissoluble thing 102 on the aluminium pad 101 and formed the erosion defective.
Therefore, how to reduce the erosion defective of the aluminium pad on the wafer and stop its deterioration or infect to other wafers and just become problem demanding prompt solution effectively.
Summary of the invention
In the summary of the invention part, introduced the notion of a series of reduced forms, this will further explain in the embodiment part.Summary of the invention part of the present invention does not also mean that key feature and the essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection domain of attempting to confirm technical scheme required for protection.
Can't reduce the erosion defective of the aluminium pad on the wafer effectively and stop its deterioration or the problem of infection to other wafers for solving prior art; The invention provides first scheme; It is a kind of method of clean wafers; Have the aluminium pad on the said wafer, wherein, said method comprises following cleaning step: use tetramethylammonium hydroxide aqueous solution that said wafer is cleaned; The content of the TMAH in the said tetramethylammonium hydroxide aqueous solution is 1.0 weight % to 9.8 weight %, and the time length of said cleaning step is 15 seconds to 40 seconds, and said cleaning step carries out under 15 ℃ to 30 ℃ temperature.
According to first scheme of the present invention, can reduce the erosion defective of the aluminium pad on the wafer effectively and stop its deterioration or infect, thereby improve the safety of the aluminium pad of semiconducter device to other wafers.Because the wafer after cleaning can recover original performance again, so this method can effectively improve good article rate.
Alternative plan of the present invention is like the described method of first scheme, and wherein, the content of the TMAH in the said tetramethylammonium hydroxide aqueous solution is 4.0 weight % to 6.0 weight %.
According to alternative plan of the present invention, can further reduce the erosion defective of the aluminium pad on the wafer effectively and stop its deterioration or infect, thereby improve the safety of the aluminium pad of semiconducter device to other wafers.
Third party's case of the present invention is that wherein, said cleaning step carries out under 20 ℃ to 25 ℃ temperature as first or the described method of alternative plan.
According to third party's case of the present invention, can be in energy-conserving and environment-protective, reduce the erosion defective of the aluminium pad on the wafer effectively and stop its deterioration or infect, thereby improve the safety of the aluminium pad of semiconducter device to other wafers.
Cubic case of the present invention be as first to third party's case the described method of arbitrary scheme; Wherein, Said method also comprises: before implementing said cleaning step and/or afterwards; Said wafer is carried out in stable condition processing, and said in stable condition processing comprises: said wafer is moved in the wafer stabilizing treatment device left standstill 10 seconds to 30 seconds, the temperature of said wafer stabilizing treatment device is 20 ℃ to 25 ℃.
According to cubic case of the present invention, can more effectively reduce the erosion defective of the aluminium pad on the wafer and stop its deterioration or infect, thereby improve the safety of the aluminium pad of semiconducter device, but also can prevent that the aluminium pad from being corroded once more to other wafers.
The 5th scheme of the present invention is like the described method of cubic case, and the pressure in the said wafer stabilizing treatment device is normal pressure.
According to the 5th scheme of the present invention, can more effectively reduce the erosion defective of the aluminium pad on the wafer and stop its deterioration or infect, thereby improve the safety of the aluminium pad of semiconducter device, but also can prevent that the aluminium pad from being corroded once more to other wafers.
The 6th scheme of the present invention is that wherein, after said cleaning step, said method also comprises following water-washing step as first or the described method of alternative plan: use deionized water that said wafer is washed.
According to the 6th scheme of the present invention, can when reaching above-mentioned effect, remove the residue of above-mentioned cleaning step.
The 7th scheme of the present invention is like the described method of the 6th scheme; Wherein, Said method also comprises: after said water-washing step; Said wafer is carried out in stable condition processing, and said in stable condition processing comprises: said wafer is moved in the wafer stabilizing treatment device left standstill 10 seconds to 30 seconds, the temperature in the said wafer stabilizing treatment device is 20 ℃ to 25 ℃.
According to the 7th scheme of the present invention, can more effectively reduce the erosion defective of the aluminium pad on the wafer and stop its deterioration or infect, thereby improve the safety of the aluminium pad of semiconducter device, but also can prevent that the aluminium pad from being corroded once more to other wafers.
All directions of the present invention case is like each described method in first to the 7th scheme, and wherein, said cleaning step carries out in normal pressure.
According to of the present invention the case from all directions, can be in energy-conserving and environment-protective, reduce the erosion defective of the aluminium pad on the wafer effectively and stop its deterioration or infect, thereby improve the safety of the aluminium pad of semiconducter device to other wafers.
Description of drawings
Attached drawings of the present invention is used to understand the present invention at this as a part of the present invention.Embodiment of the present invention and description thereof have been shown in the accompanying drawing, have been used for explaining principle of the present invention.In the accompanying drawings,
Fig. 1 is the sweep electron microscope photo of the erosion defective on the aluminium pad in the prior art;
Fig. 2 is the schema according to the method for the clean wafers of a preferred implementation of the present invention;
Fig. 3 is the sweep electron microscope photo through the part (aluminium pad) of the wafer of the described method cleaning of a preferred implementation of the present invention.
Embodiment
In the description hereinafter, a large amount of concrete details have been provided so that more thorough understanding of the invention is provided.Yet, it will be apparent to one skilled in the art that the present invention can need not one or more these details and be able to enforcement.In other example,, describe for technical characterictics more well known in the art for fear of obscuring with the present invention.
In order thoroughly to understand the present invention, detailed structure will be proposed, in following description so that explanation the present invention is the erosion defective that how to reduce the aluminium pad effectively.Obviously, execution of the present invention is not limited to the specific details that the technician had the knack of of semiconductor applications.Preferred embodiments of the present invention is described in detail as follows, yet except these were described in detail, the present invention can also have other embodiments.
For the erosion defective that reduces the aluminium pad on the wafer effectively and stop its deterioration or infect, improve the safety of the aluminium pad of semiconducter device to other wafers.The present invention proposes the method that a kind of cleaning has the wafer of aluminium pad.
The present invention the wafer that will clean be the wafer that has been formed with the aluminium pad through technologies such as deposition and etchings, the method that the cleaning of this embodiment has the wafer of aluminium pad comprises following cleaning step: the use tetramethylammonium hydroxide aqueous solution cleans this wafer.
Particularly, through deposition and etching technics after generating the aluminium pad on the wafer, this embodiment employing TMAH ((CH
3)
4NOH) solution cleans this wafer, to remove attached to the indissoluble thing on the aluminium pad.Simultaneously; The Kettenreaktion that can also make in the erosion process to be taken place through said cleaning step stops effectively; Not only solved the defective on the single wafer, also made the defective on the single wafer can not pass to other wafers in the same wafer case, thereby improved quality effectively with batch wafer.
Reaction below TMAH can take place with the indissoluble thing that contains white lake and aluminum chloride of the erosion defective that constitutes the aluminium pad:
Al(OH)
3+(CH
3)
4NOH→Al((CH
3)
4NO)
3
AL
3++(CH
3)
4NOH→Al((CH
3)
4NO)
3
Because TMAH reacts the Al ((CH that is generated with the indissoluble thing that contains white lake and aluminum chloride
3)
4NO)
3It is a kind of water-soluble material.Therefore, the Al ((CH that in the process of cleaning, is generated
3)
4NO)
3Dissolve in the used tetramethylammonium hydroxide aqueous solution of cleaning step.So just can the indissoluble thing that adhere on the aluminium pad be removed effectively, corrode defective thereby reduce.Preferably, can also after this cleaning step, carry out water-washing step with deionized water again, with thorough removal Al ((CH
3)
4NO)
3And residual scavenging solution.
Through adopting tetramethylammonium hydroxide aqueous solution that the aluminium pad is cleaned, removed the indissoluble thing that adheres on the aluminium pad on the one hand, also removed on the other hand when generating the aluminium pad by the residual impurity that contains aluminum chloride of etching.After the aluminum chloride on the aluminium pad was removed fully, moist production environment can not exert an influence to the aluminium pad yet.Adopt method of the present invention; Not only removed the indissoluble thing that adheres on the aluminium pad, also stoped the generation of indissoluble thing, thereby overcome the problems referred to above that exist in the prior art effectively from root; Make the safety of aluminium pad obtain effective assurance, and can improve quality with batch wafer.
Tetramethylammonium hydroxide aqueous solution used among the present invention can prepare through using the commercially available TMAH that contains crystal water to mix with deionized water.
Preferably, the content of the TMAH of tetramethylammonium hydroxide aqueous solution is 1.0 weight % to 9.8 weight %.According to production practice; The content of selecting TMAH for use is that the tetramethylammonium hydroxide aqueous solution of 1.0 weight % to 9.8 weight % cleans wafer; Can more effectively remove the indissoluble thing that adheres on the aluminium pad on the wafer, thereby more effectively reduce the erosion defective of aluminium pad.Preferably, the content of selecting TMAH for use is that the tetramethylammonium hydroxide aqueous solution of 4.0 weight % to 6.0 weight % cleans wafer, because such cleaning performance is better.This tetramethylammonium hydroxide aqueous solution can be the aqueous solution that only contains TMAH, also can comprise other optional components, for example other clean-out systems.
Further preferably, the time length of cleaning step is 15 seconds to 40 seconds.When the content that adopts TMAH is the tetramethylammonium hydroxide aqueous solution of 1.0 weight % to 9.8 weight % when wafer is cleaned, the time of cleaning step is controlled at the indissoluble thing that adheres on the aluminium pad that can remove effectively on the wafer in 15 seconds to 40 seconds.
Preferably, cleaning step carries out under 15 ℃ to 30 ℃ temperature.In this preferred implementation, under 15 ℃ to 30 ℃ temperature, carry out cleaning step, can remove the indissoluble thing that adheres on the aluminium pad on the wafer effectively.Wherein, when the temperature of cleaning step is controlled at 20 ℃ to 25 ℃, both helped energy-conservationly, also can obtain better cleaning effect, so be preferred.
Preferably, cleaning step carries out in normal pressure.Cleaning step in this preferred implementation can carry out in normal pressure or pressure are the environment of standard atmospheric pressure.In the process of implementing cleaning step, need not change the pressure of reaction chamber, make the indissoluble thing that adheres on the consistent aluminium pad that can remove effectively on the wafer of pressure of reaction chamber with the air pressure in the semi-conductor manufacturing shop.For ease of the control of technician to the pressure of cleaning step, the pressure that carries out the reaction chamber of cleaning step can be controlled in about 10
5Pa.
The cleaning of this embodiment has the method for the wafer of aluminium pad, can reduce the erosion defective of the aluminium pad on the wafer effectively and stops its deterioration or infect to other wafers.In addition, can also improve the safety of the aluminium pad of semiconducter device, thereby improve the electroconductibility and the safety of semiconducter device, and, therefore improve good article rate through cleaning the quality that can also improve with batch wafer.
Fig. 2 is the schema of the method for the wafer of the cleaning according to a preferred implementation of the present invention with aluminium pad.As shown in Figure 2, the method that the cleaning of this preferred implementation has the wafer of aluminium pad may further comprise the steps:
Before cleaning step 202; Wafer is carried out the first in stable condition treatment step 201; The first in stable condition treatment step 201 comprises: wafer is moved in the wafer stabilizing treatment device leave standstill; The treatment time of the first in stable condition treatment step 201 is 10 seconds to 30 seconds, and the temperature of wafer stabilizing treatment device is 20 ℃ to 25 ℃.
Particularly, the purpose of carrying out the first in stable condition treatment step 201 is to make wafer reach a stable status, thereby be convenient to the carrying out of cleaning step 202.Before carrying out cleaning step 202, wafer is moved into semi-conductor make in the wafer stabilizing treatment device of board and leave standstill, the temperature and pressure through wafer stabilizing treatment device reaches wafer to be convenient to carry out the state of cleaning step 202.Wherein, when being controlled at 20 ℃ to 25 ℃ owing to cleaning step 202, the effect of cleaning is preferable, therefore in the first in stable condition treatment step 201, can make the temperature of wafer reach 20 ℃ to 25 ℃ earlier.In the ordinary course of things, the time of carrying out first in stable condition treatment step 201 of wafer in wafer stabilizing treatment device can make the temperature of wafer reach 20 ℃ to 25 ℃ effectively, thereby be convenient to the carrying out of cleaning step 202 when being 10 seconds to 30 seconds.
Preferably, the first in stable condition treatment step 201 carries out in normal pressure.The first in stable condition treatment step 201 of this preferred implementation can carry out in normal pressure or pressure are the environment of standard atmospheric pressure.In the process of the first in stable condition treatment step 201; Need not change the pressure of wafer stabilizing treatment device, make the consistent state that can wafer be reached to be convenient to corrode defect repair cleaning step 202 of the pressure of wafer stabilizing treatment device with the air pressure in the semi-conductor manufacturing shop.For ease of the control of technician to the pressure of the wafer stabilizing treatment device of the first in stable condition treatment step 201, the interior pressure of wafer stabilizing treatment device that carries out the first in stable condition treatment step 201 can be controlled in 10
5Pa.
Carry out cleaning step 202 then; Wherein, as stated, the content that adopts TMAH is that the tetramethylammonium hydroxide aqueous solution of 1.0 weight % to 9.8 weight % cleans wafer; And scavenging period is controlled at 15-40 second, cleaning temperature is controlled at 20-25 ℃.This cleaning step 202 can carry out under normal pressure.After this cleaning step 202, as stated, also preferably can use deionized water to carry out the water-washing step (not shown).
Behind cleaning step 202, preferably wafer is carried out the second in stable condition treatment step 203.The second in stable condition treatment step 203 comprises: wafer is moved in the wafer stabilizing treatment device leave standstill.The time of the second in stable condition processing is 10 seconds to 30 seconds, and the temperature in the said wafer stabilizing treatment device is 20 ℃ to 25 ℃.
The purpose of carrying out the second in stable condition treatment step 203 is; Make wafer reach a stable status; Utilize airborne oxygen to make its passivation, thereby prevent just to carry out behind the cleaning step 202 soon aluminium pad because the existence of chlorine atom in the production environment and water molecules and suffering erosion once more.Wafer is moved into after semi-conductor makes in the wafer stabilizing treatment device of board, wafer is in is difficult for producing the state that corrodes defective.In the second in stable condition treatment step 203, can make the temperature of wafer remain on 20 ℃ to 25 ℃.In the ordinary course of things, the time of carrying out second in stable condition treatment step 203 of wafer in wafer stabilizing treatment device is 10 seconds to 30 seconds.
Preferably, the second in stable condition treatment step 203 carries out in normal pressure.The second in stable condition treatment step 203 of this preferred implementation can carry out in normal pressure or pressure are the environment of standard atmospheric pressure.In the process of the second in stable condition treatment step 203; Need not change the pressure of wafer stabilizing treatment device, make the consistent wafer that can make effectively of pressure of wafer stabilizing treatment device reach the state that is difficult for producing the erosion defective with the air pressure in the semi-conductor manufacturing shop.For ease of the control of technician to the pressure of the wafer stabilizing treatment device of the second in stable condition treatment step 203, the interior pressure of wafer stabilizing treatment device that carries out the second in stable condition treatment step 203 can be controlled in 10
5Pa.
Need to prove; Above-mentioned in stable condition treatment step is not to be that purging method of the present invention is necessary; In other words; As long as purging method of the present invention comprises above-mentioned cleaning step and can realize the basic effect of inventing, promptly reduce the erosion defective of the aluminium pad on the wafer and stop its deterioration or infect to other wafers.
The method that the described cleaning of above-mentioned preferred implementation has a wafer of aluminium pad can reduce the erosion defective of the aluminium pad on the wafer effectively and stop its deterioration or infect to other wafers; And, improved the lasting effect that cleans the aluminium pad through wafer is carried out in stable condition processing.In addition, can also improve the safety of the aluminium pad of semiconducter device, effectively improve quality with batch wafer.
Fig. 3 is the sweep electron microscope photo through the aluminium pad of the described purging method cleaning of a preferred implementation of the present invention.To after having existence as shown in Figure 1 and corroding the wafer of the aluminium pad of defective and clean, as shown in Figure 3, the indissoluble things on aluminium pad 101 surfaces are removed fully in the method through adopting a described clean wafers of preferred implementation of the present invention.This shows that the method that cleaning of the present invention has the wafer of aluminium pad has obtained the good technical effect.
The present invention is illustrated through above-mentioned embodiment, but should be understood that, above-mentioned embodiment just is used for for example and illustrative purposes, but not is intended to the present invention is limited in the described embodiment scope.It will be appreciated by persons skilled in the art that in addition the present invention is not limited to above-mentioned embodiment, can also make more kinds of variants and modifications according to instruction of the present invention, these variants and modifications all drop in the present invention's scope required for protection.Protection scope of the present invention is defined by appended claims book and equivalent scope thereof.
Claims (8)
1. the method for a clean wafers has the aluminium pad on the said wafer, and wherein, said method comprises following cleaning step: use tetramethylammonium hydroxide aqueous solution that said wafer is cleaned; The content of the TMAH in the said tetramethylammonium hydroxide aqueous solution is 1.0 weight % to 9.8 weight %, and the time length of said cleaning step is 15 seconds to 40 seconds, and said cleaning step carries out under 15 ℃ to 30 ℃ temperature.
2. method according to claim 1, wherein, the content of the TMAH in the said tetramethylammonium hydroxide aqueous solution is 4.0 weight % to 6.0 weight %.
3. method according to claim 1 and 2, wherein, said cleaning step carries out under 20 ℃ to 25 ℃ temperature.
4. method according to claim 3; Wherein, Said method also comprises: before implementing said cleaning step and/or afterwards; Said wafer is carried out in stable condition treatment step, and said in stable condition treatment step comprises: said wafer is moved in the wafer stabilizing treatment device left standstill 10 seconds to 30 seconds, the temperature of said wafer stabilizing treatment device is 20 ℃ to 25 ℃.
5. the pressure in the method according to claim 4, said wafer stabilizing treatment device is normal pressure.
6. method according to claim 1 and 2, wherein, after implementing said cleaning step, said method also comprises following water-washing step: use deionized water that said wafer is washed.
7. method according to claim 6; Wherein, Said method also is included in the in stable condition treatment step of implementing after the said water-washing step; Said in stable condition treatment step comprises: said wafer is moved in the wafer stabilizing treatment device left standstill 10 seconds to 30 seconds, the temperature in the said wafer stabilizing treatment device is 20 ℃ to 25 ℃.
8. method according to claim 1, wherein, said cleaning is carried out in normal pressure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102632563A CN102373480A (en) | 2010-08-19 | 2010-08-19 | Method for cleaning wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102632563A CN102373480A (en) | 2010-08-19 | 2010-08-19 | Method for cleaning wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102373480A true CN102373480A (en) | 2012-03-14 |
Family
ID=45792682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010102632563A Pending CN102373480A (en) | 2010-08-19 | 2010-08-19 | Method for cleaning wafer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103882464A (en) * | 2014-03-26 | 2014-06-25 | 西安同鑫新材料科技有限公司 | Steel surface cleaning agent and application thereof |
| CN104851811A (en) * | 2014-02-18 | 2015-08-19 | 中芯国际集成电路制造(上海)有限公司 | Aluminum residual defect removal method |
| CN108417491A (en) * | 2018-02-02 | 2018-08-17 | 武汉新芯集成电路制造有限公司 | A method of reducing aluminium corrosion |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW402738B (en) * | 1998-04-24 | 2000-08-21 | United Microelectronics Corp | Method of residues removing |
| CN1563493A (en) * | 2004-03-18 | 2005-01-12 | 中国科学院上海技术物理研究所 | Etching solution of tetramethyl ammonium hydroxide in use for etching silicon, and preparation method |
-
2010
- 2010-08-19 CN CN2010102632563A patent/CN102373480A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW402738B (en) * | 1998-04-24 | 2000-08-21 | United Microelectronics Corp | Method of residues removing |
| CN1563493A (en) * | 2004-03-18 | 2005-01-12 | 中国科学院上海技术物理研究所 | Etching solution of tetramethyl ammonium hydroxide in use for etching silicon, and preparation method |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104851811A (en) * | 2014-02-18 | 2015-08-19 | 中芯国际集成电路制造(上海)有限公司 | Aluminum residual defect removal method |
| CN104851811B (en) * | 2014-02-18 | 2017-12-08 | 中芯国际集成电路制造(上海)有限公司 | The method for removing aluminium residual defect |
| CN103882464A (en) * | 2014-03-26 | 2014-06-25 | 西安同鑫新材料科技有限公司 | Steel surface cleaning agent and application thereof |
| CN103882464B (en) * | 2014-03-26 | 2016-04-20 | 西安同鑫新材料科技有限公司 | A kind of steel surface clean-out system and application thereof |
| CN108417491A (en) * | 2018-02-02 | 2018-08-17 | 武汉新芯集成电路制造有限公司 | A method of reducing aluminium corrosion |
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