CN100362633C - Plasma cleaning method for removing silicon chip surface particle after etching process - Google Patents
Plasma cleaning method for removing silicon chip surface particle after etching process Download PDFInfo
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- CN100362633C CN100362633C CNB2005101262801A CN200510126280A CN100362633C CN 100362633 C CN100362633 C CN 100362633C CN B2005101262801 A CNB2005101262801 A CN B2005101262801A CN 200510126280 A CN200510126280 A CN 200510126280A CN 100362633 C CN100362633 C CN 100362633C
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- cleaning method
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Abstract
The present invention provides a plasma cleaning process for removing silicon chip surface residual particle after etching process, which comprises the following steps that firstly, the gas flushing process is carried out, and then the gas plasma starting is carried out. The plasma cleaning process for removing silicon chip surface residual particle of the present invention has the advantages of easy process control, thorough cleaning, no reactant residual, low cost, small labor amount and high work efficiency, and the needed process gas is atoxic.
Description
Technical field
The present invention relates to the etching technics field, relate to a kind of plasma cleaning method of removing silicon chip surface residual particles behind the etching technics particularly.
Background technology
In etching process, the source of particle is a lot: etching gas such as Cl
2, HBr, CF
4Have corrosivity Deng all, can produce the particle of some after etching finishes at silicon chip surface; The quartz cover of reative cell also can produce quartz particles under the bombardment effect of plasma; Liner (liner) in the reative cell also can produce metallic particles in the etching process of long period.The silicon chip surface residual particles can hinder the conduction connection after the etching, causes device failure.Therefore, the control to particle is very important in etching process.
At present, the method for removal silicon chip surface particle commonly used has two kinds: a kind of is standard cleaning (RCA) cleaning technique, and another kind is to carry out million with silicon wafer cleaner to clean.
The used cleaning device of RCA cleaning technique is multiple-grooved immersion type purging system mostly.Its matting is: a liquid (SC-1) (NH
4OH+H
2O
2HF (the DHF) (HF+H of) → dilution
2O) → No. two liquid (SC-2) (HCl+H
2O
2).Wherein, SC-1 removes particle contaminant (particle), also can remove part metals impurity.The principle of removing particle is: silicon chip surface is because H
2O
2Oxidation generates oxide-film (about 6nm is hydrophily), and this oxide-film is again by NH
4Oxidation takes place in OH corrosion immediately after the corrosion, oxidation and corrosion are carried out repeatedly, also falls in the cleaning fluid with corrosion layer attached to the particle of silicon chip surface.About 0.6nm is thick for natural oxide film, with NH
4OH and H
2O
2Concentration and rinse liquid temperature irrelevant.SC-2 uses H
2O
2With the acid solution of HCL, it has extremely strong oxidizability and complexing, can generate salt with not oxidized metal function, and be removed oxidized metal ion and CL with deionized water rinsing
-The soluble complexes that effect generates also is removed with deionized water rinsing.
There is following defective in the RCA cleaning technique: need manual operation, the amount of labour is big, operating environment danger; Complex process, scavenging period is long, and production efficiency is low; The cleaning solvent long period of soaking influences device performance easily to the silicon chip excessive erosion or stay washmarking; Cleaning agent and ultra-clean water consumption are big, the production cost height; It is better to remove the particle effect, but remove metal impurities Al, the Fe effect is not good enough.
Carrying out million cleanings with silicon wafer cleaner is that silicon chip is adsorbed on the electrostatic chuck (chuck), and silicon chip constantly rotates in the cleaning process, and cleaning fluid sprays at silicon chip surface.Can carry out the setting of different rotating speeds and spray time, finish the multistep cleaning step continuously.Typical process is: million → ammoniacal liquor+hydrogen peroxide (can heat) → washing → hydrochloric acid+hydrogen peroxide → washing → million → dry.
The defective of carrying out cleaning for million with silicon wafer cleaner shows as: can only carry out monolithic and clean, the monolithic scavenging period is long, causes production efficiency lower; Cleaning agent and ultra-clean water consumption are big, the production cost height.
Summary of the invention
(1) technical problem that will solve
The plasma cleaning method that the purpose of this invention is to provide silicon chip surface residual particles behind a kind of effective removal etching technics.
(2) technical scheme
The principle of plasma cleaning method is: rely on " activation " of the material that is in " plasma state " to reach the purpose of removing the body surface particle.It generally includes following process: a. inorganic gas is excited to plasma state; B. gaseous substance is attracted to the surface of solids; C. be adsorbed group and surface of solids molecular reaction and generate the product molecule; D. the product molecule is resolved and is formed gas phase; E. reaction residue breaks away from the surface.
Plasma cleaning method of the present invention, it may further comprise the steps: at first carry out gas bleed (purge) flow process, carry out this gaseous plasma starter then.
Used process gas is selected from O
2, Ar, N
2In any.Preferably, used process gas selects O
2
Plasma cleaning method of the present invention, the technological parameter of gas bleed flow process is set to: chamber pressure 10-40 millitorr, process gas flow 100-500sccm, time 1-5s; The technological parameter of starter process is set to: chamber pressure 10-40 millitorr, process gas flow 100-500sccm, upper electrode power 250-400W, time 1-10s.
Preferably, the technological parameter of gas bleed flow process is set to: chamber pressure 10-20 millitorr, process gas flow 100-300sccm, time 1-5s; The technological parameter of starter process is set to: chamber pressure 10-20 millitorr, process gas flow 100-300sccm, upper electrode power 250-400W, time 1-5s.
More preferably, the technological parameter of gas bleed flow process is set to: chamber pressure 15 millitorrs, process gas flow 300sccm, time 3s; The technological parameter of starter process is set to: chamber pressure 15 millitorrs, process gas flow 300sccm, upper electrode power 300W, time 5s.
(3) beneficial effect
The plasma cleaning method process control of removal silicon chip surface particle of the present invention is easy, cleans thoroughly, and reactionless thing is residual, and required process gas is nontoxic, and cost is low, and the amount of labour is little, high efficiency.
Description of drawings
CD-SEM (key dimension measurement instrument) picture before and after Fig. 1 plasma clean;
Wherein, CD:Critical dimension critical size.
FE-SEM (field emission microscope) picture before and after Fig. 2 plasma clean;
Wherein, FE:field emission field emission.
Particle (particle) picture before and after Fig. 3 plasma clean.
Embodiment
Following examples are used to illustrate the present invention, but are not used for limiting the scope of the invention.
Embodiment 1
After the etching process of finishing BT (break through natural oxidizing layer is removed step), ME (Main Etch master carves step), OE (crossing the step at quarter), in the northern ICP of Microtronic A/S plasma etching machine (PM2), carry out following gaseous plasma flushing and starter flow process immediately: at first, carry out O
2Cleaning process, remove the residual gas of previous step, chamber pressure is set to 15 millitorrs, O
2Flow is 300sccm, and duration of ventilation is 3s; Then, contain O
2The starter process: chamber pressure is set to 15 millitorrs, O
2Flow is 300sccm, and the power setting of last RF is 300W, and starting time is 5s.
Adopt this technology effectively to remove silicon chip surface residual particles behind the etching technics.
Embodiment 2
After the etching process of finishing BT, ME, OE, in the northern ICP of Microtronic A/S plasma etching machine (PM2), carry out following gaseous plasma flushing and starter flow process immediately: at first, carry out the cleaning process of Ar, remove the residual gas of previous step, chamber pressure is set to 10 millitorrs, the Ar flow is 100sccm, and duration of ventilation is 5s; Then, contain the starter process of Ar: chamber pressure is set to 10 millitorrs, and the Ar flow is 100sccm, and the power setting of last RF is 400W, and starting time is 10s.
Adopt this technology effectively to remove silicon chip surface residual particles behind the etching technics.
Embodiment 3
After the etching process of finishing BT, ME, OE, in the northern ICP of Microtronic A/S plasma etching machine (PM2), carry out following gaseous plasma flushing and starter flow process immediately: at first, carry out N
2Cleaning process, remove the residual gas of previous step, chamber pressure is set to 40 millitorrs, N
2Flow is 500sccm, and duration of ventilation is 5s; Then, contain N
2The starter process: chamber pressure is set to 40 millitorrs, N
2Flow is 500sccm, and the power setting of last RF is 250W, and starting time is 10s.
Adopt this technology effectively to remove silicon chip surface residual particles behind the etching technics.
Claims (5)
1. plasma cleaning method of removing silicon chip surface residual particles behind the etching technics, it may further comprise the steps: at first carry out the gas bleed flow process, carry out this gaseous plasma starter then; The gases used O that is selected from
2, Ar, N
2In any; The technological parameter of gas bleed flow process is set to: chamber pressure 10-40 millitorr, process gas flow 100-500sccm, time 1-5s; The technological parameter of starter process is set to: chamber pressure 10-40 millitorr, process gas flow 100-500sccm, upper electrode power 250-400W, time 1-10s.
2. plasma cleaning method as claimed in claim 1 is characterized in that the gases used O that is
2
3. plasma cleaning method as claimed in claim 1 or 2 is characterized in that the technological parameter of gas bleed flow process is set to: chamber pressure 15 millitorrs, process gas flow 300sccm, time 3s; The technological parameter of starter process is set to: chamber pressure 15 millitorrs, process gas flow 300sccm, upper electrode power 300W, time 5s.
4. plasma cleaning method as claimed in claim 1 or 2 is characterized in that the technological parameter of gas bleed flow process is set to: chamber pressure 10-20 millitorr, process gas flow 100-300sccm, time 1-5s; The technological parameter of starter process is set to: chamber pressure 10-20 millitorr, process gas flow 100-300sccm, upper electrode power 250-400W, time 1-5s.
5. plasma cleaning method as claimed in claim 4 is characterized in that the technological parameter of gas bleed flow process is set to: chamber pressure 15 millitorrs, process gas flow 300sccm, time 3s; The technological parameter of starter process is set to: chamber pressure 15 millitorrs, process gas flow 300sccm, upper electrode power 300W, time 5s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101262801A CN100362633C (en) | 2005-12-02 | 2005-12-02 | Plasma cleaning method for removing silicon chip surface particle after etching process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101262801A CN100362633C (en) | 2005-12-02 | 2005-12-02 | Plasma cleaning method for removing silicon chip surface particle after etching process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1851877A CN1851877A (en) | 2006-10-25 |
| CN100362633C true CN100362633C (en) | 2008-01-16 |
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| CNB2005101262801A Active CN100362633C (en) | 2005-12-02 | 2005-12-02 | Plasma cleaning method for removing silicon chip surface particle after etching process |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101197269B (en) * | 2006-12-06 | 2010-05-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Silicon slice etching method |
| CN101327487B (en) * | 2007-06-21 | 2010-12-22 | 中芯国际集成电路制造(上海)有限公司 | Method and system for cleaning boiler tube |
| KR20120014699A (en) * | 2010-08-10 | 2012-02-20 | 주식회사 하이닉스반도체 | Manufacturing method of semiconductor device |
| CN109585268B (en) * | 2018-11-02 | 2021-01-08 | 山东天岳先进科技股份有限公司 | Method for cleaning silicon carbide wafer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6242350B1 (en) * | 1999-03-18 | 2001-06-05 | Taiwan Semiconductor Manufacturing Company | Post gate etch cleaning process for self-aligned gate mosfets |
| CN1423833A (en) * | 2000-04-25 | 2003-06-11 | 东京电子株式会社 | Method and apparatus for plasma cleaning of workpieces |
| CN1647257A (en) * | 2002-04-16 | 2005-07-27 | 东京电子株式会社 | Method for removing photoresist and etch residues |
-
2005
- 2005-12-02 CN CNB2005101262801A patent/CN100362633C/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6242350B1 (en) * | 1999-03-18 | 2001-06-05 | Taiwan Semiconductor Manufacturing Company | Post gate etch cleaning process for self-aligned gate mosfets |
| CN1423833A (en) * | 2000-04-25 | 2003-06-11 | 东京电子株式会社 | Method and apparatus for plasma cleaning of workpieces |
| CN1647257A (en) * | 2002-04-16 | 2005-07-27 | 东京电子株式会社 | Method for removing photoresist and etch residues |
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| CN1851877A (en) | 2006-10-25 |
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Address after: 100176 8 Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Jiuxianqiao East Road, Chaoyang District, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |